CN106816372A - A kind of lithographic method of silicon carbide substrates - Google Patents
A kind of lithographic method of silicon carbide substrates Download PDFInfo
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- CN106816372A CN106816372A CN201510857144.3A CN201510857144A CN106816372A CN 106816372 A CN106816372 A CN 106816372A CN 201510857144 A CN201510857144 A CN 201510857144A CN 106816372 A CN106816372 A CN 106816372A
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- Prior art keywords
- gas
- etching
- silicon carbide
- lithographic method
- carbide substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
Abstract
The invention provides a kind of lithographic method of silicon carbide substrates, it is related to technical field of semiconductors, the formation for preventing the figure corner very low power when SiC substrate is etched.The lithographic method includes：Etching gas are passed through in the chamber of etching apparatus, silicon carbide substrates are performed etching；Wherein, the etching gas include fluoro-gas, oxygen and bromination hydrogen.The lithographic method of foregoing silicon carbide substrates is used to carry out plasma etching to silicon carbide substrates.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of lithographic method of silicon carbide substrates.
Background technology
SiC (carborundum) material has the advantages that energy gap is big, disruptive field intensity is high, dielectric constant is small,
Preparing the aspects such as high temperature, high frequency, high-power, radiation-resistant semiconductor devices and UV photodetector has
Extremely it is widely applied, is described as the very wide third generation semi-conducting material of prospect.
Lithographic technique be SiC device develop in a critical support technology, the etching precision of etching technics,
The residue of etching injury and etching surface has a major impact to the performance of SiC device.Due to SiC materials
Material hardness is high, stable chemical nature, and wet etching is unable to reach requirement, therefore normal to the etching of SiC at present
Using plasma dry etch process, the basic process of etching is：Being formed on sic substrates has figure
SiO2(silica) mask, and the SiC substrate is placed in the chamber of etching apparatus；By SF6(six
Sulfur fluoride) gas and O2(oxygen) is passed through in chamber as etching gas, and penetrating up and down to etching apparatus
Frequency electrode distinguish applied voltage, produce arc discharge, make partial etching gas ionization generate ion, electronics and
Free radical, the gaseous substance referred to as plasma that this gas by part ionization is constituted；Plasma can be
High-speed motion is carved to SiC substrate surface by chemical reaction and physical bombardment double action in the presence of electric field
Exposed SiC substrate is lost, figure is formed on sic substrates.
But, in actual etching process, it was found by the inventors of the present invention that the figure turning that etching is obtained
Place's (i.e. intersection of figure bottom and side wall) easily forms very low power 3 as shown in Figure 1, and this phenomenon is outstanding
It is more serious when graphics critical dimension is smaller.The presence of very low power 3 can make the fill process of next step exist
Cavity is formed at this, the reliability of SiC device is greatly reduced, and for SiC sensors, very low power 3
Stress concentration can be made in this place, cause the hydraulic performance decline of SiC sensors.
The content of the invention
To overcome above-mentioned defect of the prior art, the present invention to propose a kind of lithographic method of SiC substrate, with
Prevent the formation of the figure corner very low power when SiC substrate is etched.
To reach above-mentioned purpose, the present invention is adopted the following technical scheme that：
The invention provides a kind of lithographic method of SiC substrate, the lithographic method includes：Etching gas are led to
Enter in the chamber of etching apparatus, SiC substrate is performed etching；Wherein, the etching gas include containing fluorine gas
Body, O2With HBr (hydrogen bromide) gas.
In the lithographic method of silicon carbide substrates provided by the present invention, etching gas include fluoro-gas, O2With
HBr gases, (etching gas are SF in the prior art compared to existing technology6And O2), HBr gases are increased,
HBr gases can occur chemical reaction generation polymer, the polymer for being generated be attached to figure bottom and
On the wall of side, protective effect can be produced to bottom and side wall, particularly figure corner, so as to weaken anti-
The etching of ion pair figure corner is answered, very low power is effectively prevent and is formed in figure corner.
Based on the lithographic method of above-mentioned silicon carbide substrates, optionally, the gas flow of the bromination hydrogen is accounted for
The 60%~80% of whole etching gas total gas couettes.
Further, the gas flow of the fluoro-gas and the ratio of the gas flow of the oxygen are 1:1.
Based on the lithographic method of above-mentioned silicon carbide substrates, optionally, applied to the Top electrode of etching apparatus during etching
Plus electrode voltage, the power of the Top electrode voltage is 1000W~1200W.
Optionally, bottom electrode voltage is applied to the bottom electrode of etching apparatus during etching, the bottom electrode voltage
Power is 200W~350W.
Optionally, the fluoro-gas is sulfur hexafluoride gas, fluorocarbon gas or fluoroform gas.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to implementing
Example or the accompanying drawing to be used needed for description of the prior art are briefly described, it should be apparent that, describe below
In accompanying drawing be only some embodiments of the present invention, for those of ordinary skill in the art, do not paying
On the premise of going out creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the surface topography using the figure obtained by lithographic method of the prior art；
Fig. 2 is the surface topography of the figure obtained by the lithographic method provided using the embodiment of the present invention；
The structure chart of the etching apparatus of the lithographic method use that Fig. 3 is provided by the embodiment of the present invention.
Description of reference numerals：
1-SiC substrates； 2-SiO2Mask；
3- very low powers；The upper radio-frequency electrodes of 4-；
5- air inlets；6- chambers；
7- electrostatic chucks；8- coolers；
9- molecular pumps；10- dry pumps；
11- plasmas；V1- Top electrode voltages；
V2- bottom electrode voltages.
Specific embodiment
As described in background, the easy shape of figure corner for being obtained to SiC substrate etching in the prior art
Into very low power 3.Inventor research find, formed very low power 3 the reason for one of be：Ideally, carve
Figure bottom margin and side wall obtained by erosion should be in 90 ° of angles, and bottom is smooth, but due to figure turning
Place adds O relative to other more difficult discharges of region reaction product of figure2Presence, can at figure turning
Place forms SiFxOy(fluosilicic oxygen compound) layer, the SiFxOyLayer is easier to be electrically charged for comparing SiC,
SiFxOyLayer can attract more ions after charging, make ion deflecting to figure corner, enhance the position
The amount of ions at place, causes the corrasion at this to strengthen relative to other positions, forms very low power 3.Enter one
Step, when graphics critical dimension is smaller (such as：Less than 50 μm), figure corner gas exchanges are slower,
Reaction product is relative to be more difficult to discharge, therefore is more likely formed SiFxOyLayer, accelerates the formation of very low power 3.
Studied based on more than, the present inventor proposes a kind of lithographic method of SiC substrate, such as Fig. 2 institutes
Show, the lithographic method includes：Etching gas are passed through in the chamber of etching apparatus, SiC substrate is carved
Erosion；Wherein, the etching gas include fluoro-gas, O2With HBr gases.
In the lithographic method of above-mentioned silicon carbide substrates, HBr gases, etching process are increased in etching gas
In, on the one hand HBr gases can carry out physical bombardment to SiC substrate, on the other hand can occur chemical anti-
Polymer should be generated, the polymer for being generated is attached on the bottom of etched features and side wall, so as to figure
Corner produces protective effect, weakens reactive ion to the etching of figure corner, effectively prevent micro- ditch
Groove is formed in figure corner, and then is solved under the SiC device reliability as caused by the presence of very low power
Drop, the problem of the hydraulic performance decline of SiC sensors.
It is noted that in the etching to SiC substrate, the existing chemical reaction of etching of Si (silicon) atom
Effect, has physical bombardment to act on again, and the chemical property of C (carbon) atom is more stable, to C atoms
What etching played a major role is physical bombardment, therefore the etch rate of C atoms is fast far below the etching of Si atoms
Rate.When projectile is beaten in pattern side wall, cause the once sputtering of C atoms, afterwards the resilience of C atoms
To sidewall bottom, cause the secondary sputtering of C atoms, this can accelerate the appearance of very low power.In the present embodiment,
Can be chemically reacted after pattern side wall is bombarded by adding HBr gases, HBr in etching gas
Generation polymer, the polymer for being generated is attached on the wall of side, which reduces C atom sputterings to very low power shape
Into acceleration, be conducive to preventing the formation of very low power.
Further, since the polymer that HBr gases are generated is attached on the side wall of etched features, offside wall shape
Into protection, the etching of reactive ion offside wall is reduced, the side wall for being thus advantageous to improve etched features is relative
In the perpendicularity and the smooth degree of side wall of bottom, so as to improve the reliability of etched features.
With reference to specific etching apparatus, the lithographic method of the SiC substrate provided the present embodiment is carried out
It is discussed in detail.
Referring to Fig. 2 and Fig. 3, the mask with figure is formed first in SiC substrate 1 to be etched, herein
It is SiO with the mask for being formed2Illustrated as a example by mask；Then the SiC substrate 1 with mask is put into
In the chamber 6 of etching apparatus, the air inlet 5 by etching apparatus, should to etching gas are passed through in chamber 6
Etching gas include fluoro-gas, O2With HBr gases；Radio-frequency electrode 4 is applied with electrode voltage upwards simultaneously
The power of V1, Top electrode voltage V1 is Top electrode radio-frequency power, and radio-frequency electrode (is not shown in Fig. 3 downwards
Go out, on electrostatic chuck 7) apply bottom electrode voltage V2, the power of bottom electrode voltage V2 is bottom electrode
Radio-frequency power.Top electrode voltage V1 and bottom electrode voltage V2 produces arc discharge, makes partial etching gas electricity
From formation plasma 11, the institute between Top electrode voltage V1 and bottom electrode voltage V2 of plasma 11
High-speed motion is to the surface of SiC substrate 1 in the presence of the electric field of formation, so as to be formed to SiC substrate 1
Physical bombardment and chemical reaction are etched.
Fluoro-gas included by etching gas can be SF6(sulfur hexafluoride) gas, CxFy(fluorocarbon)
Gas or CHF3(fluoroform) gas etc., wherein CxFyGas for example can be CF4(carbon tetrafluoride) gas
Body.The Main Function of fluoro-gas is to obtain fluorine ion by ionization, and fluorine ion is former with Si in SiC substrate 1
Son chemically reacts, and generates SiF4(ocratation) gas, realizes the etching to Si atoms.With fluorine-containing
Gas is SF6As a example by gas, it passes through chemical reaction realize be to the reaction mechanism of the etching of Si atoms：
SiC+SF6→SiF4↑+CS2↑+CF4↑+SF4↑；C+O2→CO↑+CO2↑。
It has been mentioned hereinbefore that preventing etched features by adding HBr gases in etching gas in this implementation
The formation of corner's very low power.The gas flow of the HBr gases for being added is in the total gas stream of whole etching gas
Shared percentage should not be excessive in amount, can excessively cause fluoro-gas and O2Amount very little, cause etching speed
Rate declines；The gas flow of the HBr gases for being added is shared hundred in whole etching gas total gas couettes
Fraction is also unsuitable very few, and crossing that I haven't seen you for ages and cause HBr cannot effectively prevent very low power from being formed.It is preferred that
The shared percentage in whole etching gas total gas couettes of the gas flow of the HBr gases for being added is
60%-80%.
In etching gas, if the gas flow of fluoro-gas is more than O2Gas flow it is excessive, then can be in increase
While etch rate, aggravate very low power phenomenon；If the gas flow of fluoro-gas is less than O2Gas flow
Excessively, then etching selection ratio can be caused to decline.Based on this, can preferably make fluoro-gas in etching gas
Gas flow and O2Gas flow ratio be 1:1, to balance between very low power phenomenon and etching selection ratio
Balance relationship.
It should be noted that the etching selection ratio being previously mentioned in the present embodiment specifically refers to SiC to SiO2Quarter
Erosion selection ratio.
In order to ensure etching selection ratio higher, Top electrode radio-frequency power is unsuitable too high, too high to cause particle
Between collide probability increase, causing the mean free path of Particles Moving increases, DC self-bias drops, finally
Cause the reduction of C etching selection ratios；In order to ensure etch rate higher, Top electrode radio-frequency power is unsuitable too low,
Too low to cause the fluoro-gas can not effectively to ionize, the amount of reactive ion is reduced, and causes etch rate to decline.
In the present embodiment, the scope of Top electrode radio-frequency power preferably can be 1000W~1200W.
If bottom electrode radio-frequency power is too high, etching selection ratio can be caused to decline, if too low, can caused not
Can produce and etch at a high speed, based on this, the scope of bottom electrode radio-frequency power preferably can be in the present embodiment
200W~350W.
It should be added that, in the etching process of SiC substrate 1, chemical reaction can be released or inhaled
Heat is received, the SiC that can connect cooler 8 by the bottom of electrostatic chuck 7 to make to be positioned on electrostatic chuck 7
Substrate 1 keeps certain temperature, to ensure the uniformity of etching.Additionally, the reaction product of etching process
And residual gas can be taken away by molecular pump 9 and dry pump 10.
The lithographic method of SiC substrate 1 that the present embodiment is provided, can improve the quarter of various graphics critical dimensions
The very low power phenomenon produced during erosion, particularly with graphics critical dimension smaller (be less than 2 μm) etching when produce
Very low power phenomenon, improvement is particularly significant.
It should be noted that in order to more clearly describe the lithographic method that the present embodiment is provided, this implementation
Example has carried out specific introduction to lithographic method based on etching apparatus illustrated in fig. 3, but the etching apparatus is not
The scope of application of the lithographic method that reply the present embodiment is provided is constituted and limited, and those skilled in the art are based on this
The technical scheme that embodiment is provided, the lithographic method can be used for the etching apparatus of other structures.
Specific embodiment of the invention is the foregoing is only, but protection scope of the present invention is not limited to
This, any one skilled in the art the invention discloses technical scope in, can readily occur in
Change or replacement, should all be included within the scope of the present invention.Therefore, protection scope of the present invention
Should be based on the protection scope of the described claims.
Claims (6)
1. a kind of lithographic method of silicon carbide substrates, including：Etching gas are passed through in the chamber of etching apparatus,
Silicon carbide substrates are performed etching, it is characterised in that the etching gas include fluoro-gas, oxygen and bromine
Change hydrogen.
2. the lithographic method of silicon carbide substrates according to claim 1, it is characterised in that the bromination
The gas flow of hydrogen accounts for the 60%~80% of whole etching gas total gas couettes.
3. the lithographic method of silicon carbide substrates according to claim 2, it is characterised in that described fluorine-containing
The gas flow of gas is 1 with the ratio of the gas flow of the oxygen:1.
4. the lithographic method of silicon carbide substrates according to claim 1, it is characterised in that during etching to
The Top electrode of etching apparatus is applied with electrode voltage, and the power of the Top electrode voltage is 1000W~1200W.
5. the lithographic method of silicon carbide substrates according to claim 1, it is characterised in that during etching to
The bottom electrode of etching apparatus applies bottom electrode voltage, and the power of the bottom electrode voltage is 200W~350W.
6. the lithographic method of silicon carbide substrates according to claim 1, it is characterised in that described fluorine-containing
Gas is sulfur hexafluoride gas, fluorocarbon gas or fluoroform gas.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510857144.3A CN106816372A (en) | 2015-11-30 | 2015-11-30 | A kind of lithographic method of silicon carbide substrates |
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| CN201510857144.3A CN106816372A (en) | 2015-11-30 | 2015-11-30 | A kind of lithographic method of silicon carbide substrates |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110957214A (en) * | 2018-09-26 | 2020-04-03 | 株洲中车时代电气股份有限公司 | Groove and etching method thereof |
| CN112967929A (en) * | 2019-11-27 | 2021-06-15 | 上海积塔半导体有限公司 | Silicon carbide epitaxial layer, etching method thereof and silicon carbide device |
| CN113410136A (en) * | 2021-06-15 | 2021-09-17 | 西安微电子技术研究所 | Silicon carbide groove etching method |
| CN113745097A (en) * | 2020-05-28 | 2021-12-03 | 无锡华润上华科技有限公司 | Semiconductor device and method for manufacturing small-size characteristic pattern thereof |
| GB2601404A (en) * | 2020-09-18 | 2022-06-01 | Oxford Instruments Nanotechnology Tools Ltd | Method of preparing a silicon carbide wafer |
| CN115376908A (en) * | 2022-08-26 | 2022-11-22 | 北京北方华创微电子装备有限公司 | Etching method of GaN substrate |
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| JP2010003988A (en) * | 2008-06-23 | 2010-01-07 | Rohm Co Ltd | Method for processing sic film, and manufacturing method of semiconductor device |
| CN102738213A (en) * | 2011-04-06 | 2012-10-17 | 罗姆股份有限公司 | Semiconductor device |
| US8492280B1 (en) * | 2012-05-07 | 2013-07-23 | International Business Machines Corporation | Method for simultaneously forming features of different depths in a semiconductor substrate |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010003988A (en) * | 2008-06-23 | 2010-01-07 | Rohm Co Ltd | Method for processing sic film, and manufacturing method of semiconductor device |
| CN102738213A (en) * | 2011-04-06 | 2012-10-17 | 罗姆股份有限公司 | Semiconductor device |
| US8492280B1 (en) * | 2012-05-07 | 2013-07-23 | International Business Machines Corporation | Method for simultaneously forming features of different depths in a semiconductor substrate |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110957214A (en) * | 2018-09-26 | 2020-04-03 | 株洲中车时代电气股份有限公司 | Groove and etching method thereof |
| CN112967929A (en) * | 2019-11-27 | 2021-06-15 | 上海积塔半导体有限公司 | Silicon carbide epitaxial layer, etching method thereof and silicon carbide device |
| CN113745097A (en) * | 2020-05-28 | 2021-12-03 | 无锡华润上华科技有限公司 | Semiconductor device and method for manufacturing small-size characteristic pattern thereof |
| GB2601404A (en) * | 2020-09-18 | 2022-06-01 | Oxford Instruments Nanotechnology Tools Ltd | Method of preparing a silicon carbide wafer |
| GB2601404B (en) * | 2020-09-18 | 2023-02-15 | Oxford Instruments Nanotechnology Tools Ltd | Method of preparing a silicon carbide wafer |
| CN113410136A (en) * | 2021-06-15 | 2021-09-17 | 西安微电子技术研究所 | Silicon carbide groove etching method |
| CN115376908A (en) * | 2022-08-26 | 2022-11-22 | 北京北方华创微电子装备有限公司 | Etching method of GaN substrate |
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