CN106801223A - A kind of pair of thermal source vertical-type atmosphere reacting furnace - Google Patents

A kind of pair of thermal source vertical-type atmosphere reacting furnace Download PDF

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Publication number
CN106801223A
CN106801223A CN201710062952.XA CN201710062952A CN106801223A CN 106801223 A CN106801223 A CN 106801223A CN 201710062952 A CN201710062952 A CN 201710062952A CN 106801223 A CN106801223 A CN 106801223A
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China
Prior art keywords
heating
substrate table
base frame
support tube
heating base
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CN201710062952.XA
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CN106801223B (en
Inventor
徐庆宇
张昊
董帅
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Southeast University
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Southeast University
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The invention discloses a kind of pair of thermal source vertical-type atmosphere reacting furnace, mainly be made up of controller, rotary heating base station, the part of burner hearth three, its purposes for heating substrate table reaction temperature needed under with heating base frame can sublimator material produce atmosphere occur chemical reaction generation needed for film.The present invention is using heating substrate table and heats base frame top and bottom to placing, and material is smaller so as to upwards are easier to be reacted with the substrate contact on heating substrate table by the gas density for thermally decomposing generation on heating base frame;And the heating substrate table where substrate can be speed governing rotation, reacting the film for preparing can be more uniform, while can also adjust the distance with heating base frame;The present invention can respectively adjust the material sublimation temperature T1 of the heating base frame and underlayer temperature T2 of heating substrate table so that the heating process of atmosphere reactive deposition does not influence each other using double thermal source heating.

Description

A kind of pair of thermal source vertical-type atmosphere reacting furnace
Technical field
The present invention be it is a kind of using bottom-heated can sublimator material produce the substrate heated on atmosphere and substrate table to distil Film carries out the instrument that chemical reaction generation grows required film at a certain temperature, belongs to processing film instrument field.
Background technology
Conventional relevant atmosphere or vapor phase method prepare the instrument of film at present, mainly there is two kinds:1. it is anti-that two kinds of gases are passed through Should after condense and be deposited in a substrate (CVD);2. reacted with the substrate in pipe to being passed through a kind of gas in tube furnace.But It is that the instrument of the first type is only applicable to two kinds of gas reaction condensation depositions, is not particularly suited for solid film substrate specific At a temperature of the situation of film is directly prepared with atmosphere chemical reaction;Although and second instrument of type is applicable, not applying to In the easy material atmosphere for condensing, because (cannot be condensed in tracheae or glass tube walls) in access tube, and it is put into internal direct High temperature distillation can make material sublimation temperature identical with substrate reaction temperature and more difficult completion experiment again, and static in substrate reaction Place, be unfavorable for preparing uniform film.Therefore, specialty is lacked in research and production and is directed to solid substrate in material gas of easily sublimating The instrument of growth high-quality thin film is reacted in atmosphere.
The content of the invention
Goal of the invention:In order to overcome the deficiencies in the prior art, the present invention to provide a kind of pair of thermal source vertical-type atmosphere Reacting furnace, film quality that the reacting furnace is obtained is good, reaction is uniform.
Technical scheme:To achieve the above object, the technical solution adopted by the present invention is:
A kind of pair of thermal source vertical-type atmosphere reacting furnace, including controller (1), rotary heating base station (2) and burner hearth (3), Body of heater (35) of the burner hearth (3) including one end open, bell (36), pressure gage (30), wireway (31), vavuum pump, heating Base frame (32), heating base frame (32) is arranged in body of heater (35), and pressure gage (30) is for measuring the pressure in body of heater (35) By force, the measuring probe of the pressure gage (30) is arranged in body of heater (35), and the pressure gage (30) is connected with controller (1), The body of heater (35) is connected by wireway (31) with vavuum pump;The rotary heating base station (2) including stepper motor (4), shake Hand (5), rotary drive bar (6), threaded rod (7), connecting rod (10), retainer ring (8), support tube (81), heating substrate table (14), Installed in the openend of body of heater (35), one end of the threaded rod (7) rotates and is connected the bell (36) with bell (36), and institute State the other end of threaded rod (7) with shake the hand (5) be fixedly connected, described connecting rod (10) one end is by threaded collar and threaded rod (7) Connection, the other end is fixedly connected with retainer ring (8), and the retainer ring (8) is fixedly mounted on support tube (81);The stepping Motor (4) is fixedly mounted on one end of support tube (81), and the other end of support tube (81) is served as a contrast through bell (36) with heating Base frame (14) rotates connection, and the support tube (81) is rotated with bell (36) and is connected;The rotary drive bar (6) is arranged at branch In stay tube (81), and described rotary drive bar (6) one end be connected with stepper motor (4) rotating shaft, the other end and heats substrate table (14) it is fixedly connected;The one side that heating substrate table (14) is mutually deviated from support tube (81) is provided with fixed metal clips (12) With fixed screw holes (13), the fixed metal clips (12) is by fixed screw holes (13) installed in heating substrate table (14) On;Heating substrate table (14) is oppositely arranged with heating base frame (32).
Preferably:Heating base frame (32) is fixedly mounted on body of heater (35) bottom surface by fixed screw one (33), and institute State and burner hearth power outlet (34) is provided with body of heater (35), heating base frame (32) turns on burner hearth power outlet (34).
Preferably:It is provided with fixing bearing one (15) on the bell (36), and the threaded rod (7) and fixing bearing one (15) inner ring is fixedly connected so that threaded rod (7) is rotated with bell (36) by fixing bearing one (15) and is connected;The bell (36) it is provided with through hole on, and the support tube (81) is through through hole, and support tube (81) interference fit and through hole between.
Preferably:Fixing bearing two (16), the support tube (81) and fixation are provided with heating substrate table (14) The inner ring of bearing two (16) is fixedly connected so that support tube (81) is rotated by fixing bearing two (16) with heating substrate table (14) Connection.
Preferably:Scale bar (9) is provided with the threaded rod (7).
Preferably:Also include bellows (11), bellows limitation flange, the bellows limitation flange is fixedly mounted on branch On stay tube (81), and the bellows (11) is arranged between bellows limitation flange and bell (36).
Preferably:The controller (1) includes single-chip microcomputer, heating substrate table real time temperature display screen (17), heating substrate Platform real-time target temperature (18), heating substrate table control button (19), heating base frame real time temperature display screen (20), heating base frame Real-time target temperature (21), heating base frame control button (22), stepper motor speed governing knob (23), controller "ON" button (24), controller "Off" button (25), heating substrate table real time temperature display screen (17), heating substrate table real-time target temperature Degree (18), heating substrate table control button (19), heating base frame real time temperature display screen (20), heating base frame real-time target temperature (21), heating base frame control button (22), stepper motor speed governing knob (23), controller "ON" button (24), controller "Off" Button (25) is connected with single-chip microcomputer.
The present invention compared to existing technology, has the advantages that:
(1) using by material be positioned over instrument internal heating sublimation produce the atmosphere of the material can make some distil after produce Raw gas is easily sublimated before material avoids sublimating and cannot effectively be contacted with reaction substrate, allows these materials to use vapor phase method.
(2) of the invention use will heat substrate table and heat vertical-type depositional mode of the base frame top and bottom to placement, according to Physical thermodynamics rule, heats material on base frame smaller so as to upwards are easier to and add by the gas density that thermal decomposition is produced Substrate contact reaction on hot substrate table, can constantly make the gas that is floatd in new distillation at once with heating substrate table on film lining Bottom is reacted, and is favorably improved film reaction mass.
(3) in atmosphere course of reaction, heating substrate table can at the uniform velocity be rotated, and can cause that reaction is uniform, be conducive to Film quality and uniformity that reaction is obtained.
(4) the substrate disc computer heating control being separated from each other using double thermals source, compared to the double thermal source vapor phase methods of conventional tube furnace, Material sublimation temperature can be independent of each other with substrate reaction temperature with separate when can cause atmosphere reactive deposition.
(5) distillation severe degree according to material under design temperature adjusts heating by shaking the hand on rotary heating base station Substrate table changes the concentration of the material sublimation atmosphere that substrate is contacted and avoids the nothing of sublimating of gas with the distance of heating base frame Method is effectively contacted with substrate.Simultaneously when substrate table is heated or heating base frame temperature is higher, distance between the two can be increased and come big Amplitude weakens mutual influence, improves film reaction mass.
(6) for different size of substrate, fixed screw holes mounting elastic sheets different on heating substrate table can be selected Substrate is fixed, the versatility of instrument has been expanded.
Brief description of the drawings
Fig. 1:The overall exemplary plot of double thermal source vertical-type atmosphere reacting furnaces;
Fig. 2:Rotary heating abutment structure schematic diagram;
Fig. 3:Rotary heating abutment structure schematic diagram;
Fig. 4:Controller positive structure schematic;
Fig. 5:Controller structure schematic diagram;
Fig. 6:Chamber structure schematic diagram;
The label declaration of each part in schematic diagram:
The stepper motor 5 of 1 controller, 2 rotary heating base station, 3 burner hearth 4 is shaken the hand
The scale bar of 6 rotary drive bar, 7 threaded rod, 8 retainer ring 9
10 connecting rod, 11 bellows 12 fixes metal clips
The fixing bearing two of 15 fixing bearing of the heating substrate table of 13 fixed screw holes 14 1
17 heating substrate table real time temperature display screens 18 heat substrate table real-time target temperature
19 heating substrate table control buttons 20 heat base frame real time temperature display screen
21 heating base frame real-time target temperature 22 heat base frame control button
The controller "Off" button of 23 stepper motor speed governing knob, 24 controller "ON" button 25
The power outlet of 26 burner hearth wiring-connecting socket 27
The pressure gage of 28 29 power supply for step-by-step motor line of rotary heating base station wiring-connecting socket 30
The burner hearth power outlet of 33 fixed screw of the heating base frame of 31 wireway 32 34.
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is furture elucidated, it should be understood that these examples are merely to illustrate this Invention rather than limitation the scope of the present invention, after the present invention has been read, those skilled in the art are to of the invention various The modification of the equivalent form of value falls within the application appended claims limited range.
A kind of pair of thermal source vertical-type atmosphere reacting furnace, its purposes for heating substrate table reaction temperature needed under with heating bottom Platform can film needed for the atmosphere generation chemical reaction generation of sublimator material generation.As shown in Figure 1, 2, including controller 1, rotation plus Hot radical platform 2 and burner hearth 3, as shown in fig. 6, the burner hearth 3 includes body of heater 35, bell 36, the pressure gage 30, air guide of one end open Pipe 31, vavuum pump, heating base frame 32, the heating base frame 32 are arranged in body of heater 35, and pressure gage 30 is used to measure body of heater 35 Interior pressure, the measuring probe of the pressure gage 30 is arranged in body of heater 35, and the pressure gage 30 is connected with controller 1, institute Body of heater 35 is stated to be connected with vavuum pump by wireway 31;The heating base frame 32 is fixedly mounted on body of heater by fixed screw 1 35 bottom surfaces, and burner hearth power outlet 34 is provided with the body of heater 35, the heating base frame 32 is turned on burner hearth power outlet 34.
As shown in Fig. 2 the rotary heating base station 2 includes stepper motor 4,5, rotary drive bar 6 of shaking the hand, threaded rod 7, company Extension bar 10, retainer ring 8, support tube 81, heating substrate table 14, the bell 36 are arranged on the openend of body of heater 35, the screw thread One end of bar 7 and bell 36 are rotated and are connected, and the other end of the threaded rod 75 is fixedly connected with shaking the hand, the connecting rod 10 1 End is connected by threaded collar with threaded rod 7, and the other end is fixedly connected with retainer ring 8, and the retainer ring 8 is fixedly mounted on support On pipe 81;The stepper motor 4 is fixedly mounted on one end of support tube 81, and the other end of support tube 81 through bell 36 with Heating substrate table 14 rotates connection, and the support tube 81 is rotated with bell 36 and is connected;Through hole is provided with the bell 36, and The support tube 81 passes through interference fit between through hole, and support tube 81 and through hole.The rotary drive bar 6 is arranged at support tube In 81, and described one end of rotary drive bar 6 is connected with the rotating shaft of stepper motor 4, and the other end is fixedly connected with heating substrate table 14;Institute State heating substrate table 14 and the one side that support tube 81 mutually deviates from is provided with fixed metal clips 12 and fixed screw holes 13, it is described solid Determine metal clips 12 to be arranged on heating substrate table 14 by fixed screw holes 13;The heating substrate table 14 and heating base frame 32 It is oppositely arranged.Scale bar 9 is provided with the threaded rod 7.Also include that bellows 11, bellows limits flange, the bellows Limitation flange is fixedly mounted on support tube 81, and the bellows 11 is arranged between bellows limitation flange and bell 36.
As shown in figure 3, fixing bearing 1 is provided with the bell 36, and the threaded rod 7 and fixing bearing 1 Inner ring be fixedly connected so that threaded rod 7 is connected by the rotation of fixing bearing 1 and bell 36;On the heating substrate table 14 Fixing bearing 2 16 is provided with, the support tube 81 is fixedly connected with the inner ring of fixing bearing 2 16 so that support tube 81 passes through Fixing bearing 2 16 is rotated with heating substrate table 14 and is connected.
As shown in Figure 4,5, the controller 1 includes single-chip microcomputer, heating substrate table real time temperature display screen 17, heating substrate Platform real-time target temperature 18, heating substrate table control button 19, heating base frame real time temperature display screen 20, the heating real-time mesh of base frame Mark temperature 21, heating base frame control button 22, stepper motor speed governing knob 23, controller "ON" button 24, controller "Off" are pressed Button 25, the heating substrate table real time temperature display screen 17, heating substrate table real-time target temperature 18, heating substrate table control are pressed Key 19, heating base frame real time temperature display screen 20, heating base frame real-time target temperature 21, heating base frame control button 22, stepping Electric machine speed regulation knob 23, controller "ON" button 24, controller "Off" button 25 are connected with single-chip microcomputer.In the machine of controller 1 Burner hearth wiring-connecting socket 26, power outlet 27, rotary heating base station wiring-connecting socket 28, stepper motor are additionally provided with cabinet Power line 29.
The principle of the invention is as follows:
5 are shaken the hand by rotation, rotate threaded rod 7, threaded rod 7 rotates, drive threaded collar, and then move by connecting rod 10 Retainer ring 8, because retainer ring 8 is fixedly connected with support tube 81, and then is lifted or reduces heating substrate table 14, heats substrate table 14 rising and reduction and then the spacing between regulation heating substrate table 14 and heating base frame 32.In addition, operationally, Ke Yitong The rotating speed that stepper motor speed governing knob 23 controls stepper motor is crossed, the rotation of stepper motor is passed to by rotary drive bar 6 and added Hot substrate table 14, and then cause that heating substrate table 14 is rotated.
(1) present invention using heating heating base frame 31 on place can sublimator material come distil produce atmosphere with heating lining Film needed for the substrate film of heating carries out reaction generation at a certain temperature on base frame 14.
(2) this hair is using heating substrate table 14 and heats vertical-type depositional mode of the top and bottom of base frame 32 to placement.
(3) present invention can be by the way that the speed governing knob 23 on controller 1 is come rotary heating substrate table 14 and adjusts rotating speed.
(4) present invention can by rotation 2 heat base stations on shake the hand 5 come adjust heating substrate table 14 with heating base frame 32 Distance.
(5) using double thermal source separated heatings, heating substrate table 14 is separated from each other the present invention with base frame 32 is heated, and can be with Temperature is adjusted respectively.
(6) on the heating substrate table 14 of rotary heating base station 2 can be with root for fixing the fixed metal clips 12 of substrate Installed from different fixed screw holes 13 according to substrate size.
Case
Prepare vapor phase method methylamine bustamentite film:The lead iodide FTO glass substrate films that will be prepared are placed on rotary heating On the heating substrate table 14 of base station 2, lead iodide FTO glass substrates are fixed with fixed metal clips 12, then by methylpyridinium iodide ammonium Powder is placed on the heating base frame 32 of the bottom of burner hearth 3, after instrument is installed, 5 is shaken the hand on regulation rotary heating base station 2 Adjust heating substrate table 14 and heat the distance between base frame 31, the vavuum pump for opening connection wireway 31 is evacuated to pressure Meter 30 to 10-1Pa removes air, and adjusting stepper motor speed governing knob 24 rotary heating substrate table 14 makes reaction more uniform. The reaction temperature that heating substrate table 14 is heated to 200 DEG C by the controller heating base frame control button 22 on operational control device 1 is simultaneously Heating substrate table control button 19 on insulation 20min, then operational control device 1 will heat base frame 32 and be heated to 150 DEG C and make methyl Ammonium iodide powder starts distillation and produces methylpyridinium iodide ammonium atmosphere, the lead iodide in methylpyridinium iodide ammonium atmosphere and heating substrate table 14 FTO glass substrates film issues biochemical reaction 20min generations final product methylamine bustamentite FTO substrate films at 200 DEG C, waits When cooling closes to an end, the heating of heating base frame 32 is closed, instrument is opened after cooling and takes out the film that vapor phase method is prepared.
In sum, the present invention using heating substrate table and heating base frame top and bottom to placing, receive on heating base frame by material Thermally decompose the gas density for producing smaller so as to upwards are easier to be reacted with the substrate contact on heating substrate table;And serve as a contrast Heating substrate table where bottom can be speed governing rotation, react preparation film can more uniformly, while can also adjust with Heat the distance of base frame;The present invention uses double thermals source heating, can respectively adjust the material sublimation temperature T1 of heating base frame and add The underlayer temperature T2 of hot substrate table so that the heating process of atmosphere reactive deposition does not influence each other.
The above is only the preferred embodiment of the present invention, it should be pointed out that:For the ordinary skill people of the art For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should It is considered as protection scope of the present invention.

Claims (7)

1. a kind of pair of thermal source vertical-type atmosphere reacting furnace, it is characterised in that:Including controller (1), rotary heating base station (2) and Burner hearth (3), body of heater (35) of the burner hearth (3) including one end open, bell (36), pressure gage (30), wireway (31), vacuum Pump, heating base frame (32), heating base frame (32) are arranged in body of heater (35), and pressure gage (30) is for measuring body of heater (35) Interior pressure, the measuring probe of the pressure gage (30) is arranged in body of heater (35), and the pressure gage (30) and controller (1) Connection, the body of heater (35) is connected by wireway (31) with vavuum pump;The rotary heating base station (2) is including stepper motor (4), shake the hand (5), rotary drive bar (6), threaded rod (7), connecting rod (10), retainer ring (8), support tube (81), heating substrate Platform (14), the bell (36) rotates with bell (36) and connects installed in the openend of body of heater (35), one end of the threaded rod (7) Connect, and the other end of the threaded rod (7) with shake the hand (5) be fixedly connected, described connecting rod (10) one end pass through threaded collar and spiral shell Rasp bar (7) is connected, and the other end is fixedly connected with retainer ring (8), and the retainer ring (8) is fixedly mounted on support tube (81); The stepper motor (4) is fixedly mounted on one end of support tube (81), and the other end of support tube (81) passes through bell (36) Rotated with heating substrate table (14) and be connected, and the support tube (81) is rotated with bell (36) and is connected;The rotary drive bar (6) It is arranged in support tube (81), and described rotary drive bar (6) one end be connected with stepper motor (4) rotating shaft, the other end and heats Substrate table (14) is fixedly connected;The one side that heating substrate table (14) is mutually deviated from support tube (81) is provided with fixed metal elastic Piece (12);Heating substrate table (14) is oppositely arranged with heating base frame (32).
2. double thermal source vertical-type atmosphere reacting furnaces according to claim 1, it is characterised in that:Heating base frame (32) passes through Fixed screw one (33) is fixedly mounted on body of heater (35) bottom surface, and burner hearth power outlet (34) is provided with the body of heater (35), Heating base frame (32) turns on burner hearth power outlet (34).
3. double thermal source vertical-type atmosphere reacting furnaces according to claim 1, it is characterised in that:It is provided with the bell (36) Fixing bearing one (15), and the threaded rod (7) is fixedly connected with the inner ring of fixing bearing one (15) so that threaded rod (7) leads to Fixing bearing one (15) is crossed to be connected with bell (36) rotation;It is provided with through hole on the bell (36), and the support tube (81) Through through hole, and support tube (81) interference fit and through hole between.
4. double thermal source vertical-type atmosphere reacting furnaces according to claim 1, it is characterised in that:On heating substrate table (14) Fixing bearing two (16) is provided with, the support tube (81) is fixedly connected with the inner ring of fixing bearing two (16) so that support tube (81) rotated with heating substrate table (14) by fixing bearing two (16) and be connected.
5. double thermal source vertical-type atmosphere reacting furnaces according to claim 1, it is characterised in that:Set on the threaded rod (7) There is scale bar (9).
6. double thermal source vertical-type atmosphere reacting furnaces according to claim 1, it is characterised in that:Also include bellows (11), ripple Line pipe limits flange, and the bellows limitation flange is fixedly mounted on support tube (81), and the bellows (11) is arranged at Bellows is limited between flange and bell (36).
7. double thermal source vertical-type atmosphere reacting furnaces according to claim 1, it is characterised in that:The controller (1) is including list Piece machine, heating substrate table real time temperature display screen (17), heating substrate table real-time target temperature (18), heating substrate table control are pressed Key (19), heating base frame real time temperature display screen (20), heating base frame real-time target temperature (21), heating base frame control button (22), stepper motor speed governing knob (23), controller "ON" button (24), controller "Off" button (25), the heating substrate Platform real time temperature display screen (17), heating substrate table real-time target temperature (18), heating substrate table control button (19), heating bottom Platform real time temperature display screen (20), heating base frame real-time target temperature (21), heating base frame control button (22), stepper motor are adjusted Fast knob (23), controller "ON" button (24), controller "Off" button (25) are connected with single-chip microcomputer.
CN201710062952.XA 2017-02-01 2017-02-01 A kind of double heat source vertical-type atmosphere reacting furnaces Active CN106801223B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112289711A (en) * 2020-10-23 2021-01-29 西北工业大学 Low-temperature substrate heating table for growing semiconductor film and manufacturing method thereof

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CN201158704Y (en) * 2008-01-11 2008-12-03 中国科学院沈阳科学仪器研制中心有限公司 Substrate warming frame for vacuum plating
CN101512041A (en) * 2005-12-02 2009-08-19 超导技术公司 High-throughput deposition system for oxide thin film growth by reactive coevaportation
US20100275848A1 (en) * 2009-05-01 2010-11-04 Hitachi-Kokusai Electric Inc. Heat treatment apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0704554A1 (en) * 1994-09-30 1996-04-03 Shin-Etsu Handotai Company Limited Wafer supporting boat
US20030075108A1 (en) * 1999-12-17 2003-04-24 Intel Corporation Method and apparatus for dry/catalytic-wet steam oxidation of silicon
CN101512041A (en) * 2005-12-02 2009-08-19 超导技术公司 High-throughput deposition system for oxide thin film growth by reactive coevaportation
CN201158704Y (en) * 2008-01-11 2008-12-03 中国科学院沈阳科学仪器研制中心有限公司 Substrate warming frame for vacuum plating
US20100275848A1 (en) * 2009-05-01 2010-11-04 Hitachi-Kokusai Electric Inc. Heat treatment apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112289711A (en) * 2020-10-23 2021-01-29 西北工业大学 Low-temperature substrate heating table for growing semiconductor film and manufacturing method thereof
CN112289711B (en) * 2020-10-23 2024-04-26 西北工业大学 Low-temperature substrate heating table for growing semiconductor film and manufacturing method thereof

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