CN106788289B - A kind of predistortion circuit and method of ROF laser - Google Patents
A kind of predistortion circuit and method of ROF laser Download PDFInfo
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- CN106788289B CN106788289B CN201611083940.7A CN201611083940A CN106788289B CN 106788289 B CN106788289 B CN 106788289B CN 201611083940 A CN201611083940 A CN 201611083940A CN 106788289 B CN106788289 B CN 106788289B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
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Abstract
The invention discloses the predistortion circuits and method of a kind of ROF laser, and the function of the predistortion of laser is realized by the structure of cathode-input amplifier and gain multiplication.Cathode-input amplifier is by the first NMOS transistor Q1, tri- NMOS transistor compositions of second NMOS transistor Q2 and third NMOS transistor Q3, wherein third NMOS transistor Q3 work is in saturation region, and the second NMOS transistor Q2 works in sub-threshold region, for compensating the non-linear of transistor third NMOS transistor Q3 generation.Second NMOS transistor Q2 and third NMOS transistor Q3 can approximation regard linear path as.First MOS transistor Q1 equally works in sub-threshold region, and the size of the third-order non-linear of the first NMOS transistor Q1, non-linear paths of the third NMOS transistor Q3 pipe as entire predistortion are controlled by the gain of push-pull amplifier.It is entire that predistortion circuit is simple, area is small, low in energy consumption, integrated level is high.
Description
Technical field
The present invention relates to a kind of predistortion circuits for being simply applied to ROF laser, belong to technical field of information transmission.
Background technique
Radio frequency fiber optic, that is, ROF (Radio Over Fiber) technology be it is a kind of using radio frequency or intermediate-freuqncy signal modulated light wave simultaneously
The information transmission technology transmitted by light wave.Due to having using optical fiber transmitting radio frequency signal, channel is stable, low, band is lost
It is roomy, not by electromagnetic interference, it is radiationless, light-weight, be easily installed the advantages that maintenance, therefore ROF technology is in mobile communication, naval vessel
The fields such as communication, radio astronomy, medical image are widely used.Nearest quantum communications obtain the highest attention of country,
And ROF technology is their ability to widely applied important leverage.
Summary of the invention
Goal of the invention: the present invention is to solve the non-linear signal transmitting and receiving to entire ROF system of laser itself and make
At influence, the present invention provides the predistortion circuit and method of a kind of ROF laser, and the present invention is using work in sub-threshold status
MOS have opposite with laser non-linear, the non-linear realization that transistor is controlled by feed circuit is non-to laser
Linear compensation.It is entire that predistortion circuit is simple, area is small, low in energy consumption, integrated level is high.
Technical solution: to achieve the above object, the technical solution adopted by the present invention are as follows:
A kind of predistortion circuit of ROF laser, including single-stage cathode-input amplifier, T-type bias device, gain multiplication amplification
Device, in which:
The single-stage cathode-input amplifier is mainly brilliant by the first NMOS transistor Q1, the second NMOS transistor Q2, the 3rd NMOS
Body pipe Q3, the 6th NMOS transistor Q6 and first resistor R1 composition, the drain electrode of the first NMOS transistor Q1, the 2nd NMOS are brilliant
The drain electrode of body pipe Q2, the drain electrode of third NMOS transistor Q3 are connect with the source electrode of the 6th NMOS transistor Q6, and described second
The source electrode of NMOS transistor Q2, the source electrode of third NMOS transistor Q3 are connect with the source electrode of the first NMOS transistor Q1, described
The drain electrode of 6th NMOS transistor Q6 is connect with one end of first resistor R1, and another termination power Vdd of first resistor R1, institute
The grid for stating the 6th NMOS transistor Q6 meets power supply Vdd, and the grid of the third NMOS transistor Q3 meets first voltage V1, and second
The grid of NMOS transistor Q2 meets second voltage V2, and the grid of the first NMOS transistor Q1 connects second by second resistance R3
Voltage V2.
The T-type bias device includes that first capacitor C1 and the first inductance L1, the first capacitor C1 mono- terminate input signal
RFin, the source electrode of the first NMOS transistor Q1 of another termination, and described one end first inductance L1 is grounded, the first NMOS of another termination
The source electrode of transistor Q1.
The gain multiplier amplifier is mainly by the 4th PMOS transistor Q4, the 5th NMOS transistor Q5 and second resistance
The grid of R2 composition, the 5th NMOS transistor Q5 is connect by the second capacitor C2 with the source electrode of the first NMOS transistor Q1,
The source electrode of the 5th NMOS transistor Q5 is grounded, and the drain electrode of the 5th MOS transistor Q5 and the 4th PMOS transistor Q4
Drain electrode connection, the grid of the 4th PMOS transistor Q4 connect with the grid of the 5th NMOS transistor Q5, the described 4th
The source electrode of PMOS transistor Q4 meets control voltage Vc；One end of the second resistance R2 and the grid of the 5th NMOS transistor Q5 connect
It connects, the other end is connect with the drain electrode of the 5th NMOS transistor Q5, and the drain electrode of the 5th NMOS transistor Q5 passes through the 4th capacitor
C4 is connect with the grid of the first NMOS transistor Q1.
A kind of pre-distortion method of the predistortion circuit of ROF laser: the effect of the second capacitor C2, the 4th capacitor C4
It is by input signal RFinIt is coupled to the grid of gain multiplier amplifier and by the output coupling of gain multiplier amplifier to first
The grid of NMOS transistor Q1.First resistor R1 is the drain load of single-stage cathode-input amplifier.Third NMOS transistor Q3 work
In saturation region, the second NMOS transistor Q2 work carries out three rank linear compensations in sub-threshold region, to third NMOS transistor Q3, makes
The overall work of the two pipes is obtained in the higher state of the linearity.First MOS transistor Q1 also works in sub-threshold region, and second
It is linear path that NMOS transistor Q2 and third NMOS transistor Q3, which is used as, and the first NMOS transistor Q1 nonlinear path.It is logical
Cross the gain that control voltage Vc adjusts gain multiplier amplifier.
It is preferred: assuming that the transmission equation of transistor of first MOS transistor Q1 this work in sub-threshold region indicates are as follows:
io=g1vin+g2vin 2+g3vin 3
In formula, ioIndicate the signal code of output, g1Indicate the coefficient of first order of Taylor series expansion, g2Indicate Taylor series
The second order coefficient of expansion, g3Indicate three level numbers of Taylor series expansion, vinIndicate input signal；
In conjunction with gain multiplier amplifier, then output reforms into following formula:
io=(1+A) g1vin+(1+A)2g2vin 2+(1+A)3g3vin 3
In formula, A indicates the gain of gain multiplier amplifier.
The utility model has the advantages that the present invention compared with prior art, has the advantages that
Using single-stage cathode-input amplifier, structure is simple, and domain area occupied is small.Gain multiplication is controlled by adjusting Vc to put
The gain of big device, and then the third-order non-linear of entire predistortion circuit is adjusted, principle is simple, and circuit performance is stablized.
Detailed description of the invention
Fig. 1 tradition predistortion architecture block diagram
Fig. 2 is the structural schematic diagram of circuit of the present invention.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, it should be understood that these examples are merely to illustrate this
It invents rather than limits the scope of the invention, after the present invention has been read, those skilled in the art are to of the invention various
The modification of equivalent form falls within the application range as defined in the appended claims.
As shown in Figure 1, existing predistortion circuit uses multichannel gauge structure, they are by passing through power splitter for input signal
It is decomposed, the signal of decomposition is then passed through linear path respectively, and there are also non-linear paths.Linear path needs electric delay line,
So that signal is identical with the time of non-linear paths by linear path.For the phase of transition non-linearities access, non-linear
Access also needs phase-shifter.Domain area occupied is big, and structure is extremely complex.
As shown in Fig. 2, the present invention uses predistortion circuit.Circuit structure is simple, can effectively realize the pre- of laser
Distortion.
The predistortion circuit of ROF laser of the invention a kind of is realized based on MOS transistor itself is non-linear.Together
When, since cathode-input amplifier itself has very big bandwidth, which can work under biggish bandwidth.Main packet
It includes including a single-stage cathode-input amplifier, T-type bias device, a push-pull amplifier as gain multiplier amplifier.
Cathode-input amplifier is made of transistor Q1, Q2, Q3, Q6 and R1 in the present invention.L1 and C1 uses external Bias-
Tee matches to realize.The effect of C2, C4 are input signal to be coupled to the grid of push-pull amplifier and by push-pull amplifier
Grid of the output coupling to Q1 pipe.R1 is the drain load of cathode-input amplifier.Wherein the work of Q3 pipe exists in saturation region, the work of Q2 pipe
Sub-threshold region carries out three rank linear compensations to Q3 pipe, so that the overall work of the two pipes is in the higher state of the linearity.This
In Q2 and Q3 pipe may be considered linear path.Q1 pipe also works in sub-threshold region.It is considered that Q1 pipe is nonlinear path.
The gain multiplier amplifier structure of Q4, Q5, R2 composition, for driving Q1 transistor.It is adjusted by Vc by Q4, Q5, R2 composition
The gain of push-pull amplifier.
The single-stage cathode-input amplifier is mainly brilliant by the first NMOS transistor Q1, the second NMOS transistor Q2, the 3rd NMOS
Body pipe Q3, the 6th NMOS transistor Q6 and first resistor R1 composition, the drain electrode of the first NMOS transistor Q1, the 2nd NMOS are brilliant
The drain electrode of body pipe Q2, the drain electrode of third NMOS transistor Q3 are connect with the source electrode of the 6th NMOS transistor Q6, and described second
The source electrode of NMOS transistor Q2, the source electrode of third NMOS transistor Q3 are connect with the source electrode of the first NMOS transistor Q1, described
The drain electrode of 6th NMOS transistor Q6 is connect with one end of first resistor R1, and another termination power Vdd of first resistor R1, institute
The grid for stating the 6th NMOS transistor Q6 meets power supply Vdd, and the grid of the third NMOS transistor Q3 meets first voltage V1, and second
The grid of NMOS transistor Q2 meets second voltage V2, and the grid of the first NMOS transistor Q1 connects second by second resistance R3
Voltage V2.
The T-type bias device includes that first capacitor C1 and the first inductance L1, the first capacitor C1 mono- terminate input signal
RFin, the source electrode of the first NMOS transistor Q1 of another termination, and described one end first inductance L1 is grounded, the first MOS of another termination is brilliant
The source electrode of body pipe Q1.
The gain multiplier amplifier is mainly by the 4th PMOS transistor Q4, the 5th NMOS transistor Q5 and second resistance
The grid of R2 composition, the 5th NMOS transistor Q5 is connect by the second capacitor C2 with the source electrode of the first NMOS transistor Q1,
The source electrode of the 5th NMOS transistor Q5 is grounded, and the drain electrode of the 5th NMOS transistor Q5 and the 4th PMOS transistor Q4
Drain electrode connection, the grid of the 4th PMOS transistor Q4 connect with the grid of the 5th NMOS transistor Q5, the described 4th
The source electrode of PMOS transistor Q4 meets control voltage Vc；One end of the second resistance R2 and the grid of the 5th NMOS transistor Q5 connect
It connects, the other end is connect with the drain electrode of the 5th NMOS transistor Q5, and the drain electrode of the 5th NMOS transistor Q5 passes through the 4th capacitor
C4 is connect with the grid of the first NMOS transistor Q1.
A kind of pre-distortion method of the predistortion circuit of ROF laser: the effect of the second capacitor C2, the 4th capacitor C4
It is by input signal RFinIt is coupled to the grid of gain multiplier amplifier and by the output coupling of gain multiplier amplifier to first
The grid of NMOS transistor Q1.First resistor R1 is the drain load of single-stage cathode-input amplifier.Third NMOS transistor Q3 work
In saturation region, the second NMOS transistor Q2 work carries out three rank linear compensations in sub-threshold region, to third NMOS transistor Q3, makes
The overall work of the two pipes is obtained in the higher state of the linearity.First NMOS transistor Q1 also works in sub-threshold region, the
It is linear path that bi-NMOS transistor Q2 and third NMOS transistor Q3, which is used as, and the first NMOS transistor Q1 nonlinear path.
The gain of gain multiplier amplifier is adjusted by control voltage Vc.
Assuming that first this work of MOS transistor Q1 is expressed as formula (1) in the transmission equation of the transistor of sub-threshold region:
io=g1vin+g2vin 2+g3vin 3 (1)
In formula, ioIndicate the signal code of output, g1Indicate the coefficient of first order of Taylor series expansion, g2Indicate Taylor series
The second order coefficient of expansion, g3Indicate three level numbers of Taylor series expansion, vinIndicate input signal.
In conjunction with gain multiplier amplifier, then output reforms into formula (2):
io=(1+A) g1vin+(1+A)2g2vin 2+(1+A)3g3vin 3 (2)
In formula, A indicates the gain of gain multiplier amplifier.
It can be seen that, three ranks are exaggerated (1+A) from above formula3Times.Because working in the transistor sheet of sub-threshold region
Body has the third-order non-linear opposite with laser, therefore it is reversed to carry out not need phase-shifter.
The present invention is total to grid amplifying circuit and a push-pull amplifier as gain multiplication loop (amplification using a single-stage
Device).Cathode-input amplifier is by tri- the first NMOS transistor Q1, the second NMOS transistor Q2, third NMOS transistor Q3 MOS crystal
Pipe composition, wherein third NMOS transistor Q3 work is in saturation region, and the second NMOS transistor Q2 work is used in sub-threshold region
Compensate the non-linear of third NMOS transistor Q3 generation.Second NMOS transistor Q2 and third NMOS transistor Q3 can approximation see
Linear access.First NMOS transistor Q1 also works in sub-threshold region, controls first by the gain of push-pull amplifier
The size of the third-order non-linear of NMOS transistor Q1, non-linear paths of the third NMOS transistor Q3 as entire predistortion.The
The gain multiplier amplifier structure of four NMOS transistor Q4, the 5th MOS transistor Q5, second resistance R2 compositions, is applied to first
The pipe of this work sub-threshold region NMOS transistor Q1.The gain of push-pull amplifier can be realized by adjusting voltage Vc.
Entire working principle may be considered the second NMOS transistor Q2, this linear path of third NMOS transistor Q3 adds third
The non-linear paths of this three rank of NMOS transistor Q3 compensation work together, and the output signal of generation carries out rear class laser
Compensation.First capacitor C1, the first inductance L1 is using external device, such as Bias-Tee.The area of entire circuit is small, power consumption
It is low.
Predistortion circuit proposed by the present invention has structure simple, and chip area is small, feature low in energy consumption.
The above is only a preferred embodiment of the present invention, it should be pointed out that: for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (3)
1. a kind of predistortion circuit of ROF laser, it is characterised in that: including single-stage cathode-input amplifier, T-type bias device, gain
Multiplier amplifier, in which:
The single-stage cathode-input amplifier include the first NMOS transistor Q1, the second NMOS transistor Q2, third NMOS transistor Q3,
The drain electrode of 6th NMOS transistor Q6 and first resistor R1, the first NMOS transistor Q1, the leakage of the second NMOS transistor Q2
The drain electrode of pole, third NMOS transistor Q3 is connect with the source electrode of the 6th NMOS transistor Q6, and second NMOS transistor
The source electrode of Q2, the source electrode of third NMOS transistor Q3 are connect with the source electrode of the first NMOS transistor Q1, and the 6th NMOS is brilliant
The drain electrode of body pipe Q6 is connect with one end of first resistor R1, and another termination power Vdd of first resistor R1, the 6th NMOS
The grid of transistor Q6 meets power supply Vdd, and the grid of the third NMOS transistor Q3 connects first voltage V1, the second NMOS transistor
The grid of Q2 meets second voltage V2, and the grid of the first NMOS transistor Q1 meets second voltage V2 by second resistance R3；
The T-type bias device includes that first capacitor C1 and the first inductance L1, the first capacitor C1 mono- terminate input signal RFin,
The source electrode of the first NMOS transistor Q1 of another termination, and described one end first inductance L1 is grounded, the first NMOS crystal of another termination
The source electrode of pipe Q1；
The gain multiplier amplifier includes the 4th PMOS transistor Q4, the 5th NMOS transistor Q5 and second resistance R2, institute
The grid for stating the 5th NMOS transistor Q5 is connect by the second capacitor C2 with the source electrode of the first NMOS transistor Q1, and the described 5th
The source electrode of NMOS transistor Q5 is grounded, and the drain electrode of the 5th NMOS transistor Q5 and the drain electrode of the 4th PMOS transistor Q4 connect
It connects, the grid of the 4th PMOS transistor Q4 is connect with the grid of the 5th NMOS transistor Q5, the 4th PMOS transistor
The source electrode of Q4 meets control voltage Vc；One end of the second resistance R2 is connect with the grid of the 5th NMOS transistor Q5, the other end
It is connect with the drain electrode of the 5th NMOS transistor Q5, the drain electrode of the 5th NMOS transistor Q5 passes through the 4th capacitor C4 and first
The grid of NMOS transistor Q1 connects.
2. a kind of pre-distortion method of the predistortion circuit based on ROF laser described in claim 1, it is characterised in that: institute
The effect for stating the second capacitor C2, the 4th capacitor C4 is by input signal RFinIt is coupled to the grid of gain multiplier amplifier and incites somebody to action
Grid of the output coupling of gain multiplier amplifier to the first NMOS transistor Q1；First resistor R1 is single-stage cathode-input amplifier
Drain load；Third NMOS transistor Q3 work works in saturation region, the second NMOS transistor Q2 in sub-threshold region, to third
NMOS transistor Q3 carries out three rank linear compensations, so that the overall work of the two pipes is in the higher state of the linearity；First
NMOS transistor Q1 also works in sub-threshold region, and the second NMOS transistor Q2 and third NMOS transistor Q3 conduct are linear roads
Diameter, and the first NMOS transistor Q1 nonlinear path；The gain of gain multiplier amplifier is adjusted by control voltage Vc.
3. the pre-distortion method of the predistortion circuit of ROF laser according to claim 2, it is characterised in that: assuming that first
This work of MOS transistor Q1 is indicated in the transmission equation of the transistor of sub-threshold region are as follows:
io=g1vin+g2vin 2+g3vin 3；
In formula, ioIndicate the signal code of output, g1Indicate the coefficient of first order of Taylor series expansion, g2Indicate Taylor series expansion
Second order coefficient, g3Indicate three level numbers of Taylor series expansion, vinIndicate input signal；
In conjunction with gain multiplier amplifier, then output reforms into following formula:
io=(1+A) g1vin+(1+A)2g2vin 2+(1+A)3g3vin 3
In formula, A indicates the gain of gain multiplier amplifier.
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| CN201611083940.7A CN106788289B (en) | 2016-11-30 | 2016-11-30 | A kind of predistortion circuit and method of ROF laser |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5361156A (en) * | 1991-12-09 | 1994-11-01 | Scientific-Atlanta, Inc. | Method and apparatus for predistortion |
| CN1326611A (en) * | 1998-09-17 | 2001-12-12 | 通用仪器公司 | In-line, unbalanced amplifier, pre-distortion circuit |
| CN1346554A (en) * | 1998-08-25 | 2002-04-24 | 奥泰尔公司 | In-line predistorter for linearization of electronic and optical signals |
| CN1359558A (en) * | 1999-04-01 | 2002-07-17 | 通用仪表公司 | Non-linear distortion generator |
| CN2768325Y (en) * | 2005-01-17 | 2006-03-29 | 林锦芳 | Pre-distortion optical transmitter |
| CN102496844A (en) * | 2011-12-07 | 2012-06-13 | 天津大学 | Complementary metal oxide semiconductor (CMOS) laser driving circuit for fourth generation (4G) radio-over-fiber |
| CN101951230B (en) * | 2010-09-03 | 2012-07-04 | 华东师范大学 | Broadband low noise amplifier |
| CN202334441U (en) * | 2011-12-09 | 2012-07-11 | 德明通讯(上海)有限公司 | Controllable attenuation predistortion circuit |
| CN103346741A (en) * | 2013-07-31 | 2013-10-09 | 东南大学 | Double-circuit noise canceling type current-reuse low noise amplifier |
| CN103444102A (en) * | 2011-01-13 | 2013-12-11 | 美商祥茂光电科技股份有限公司 | System and method for distortion compensation in response to frequency detection |
-
2016
- 2016-11-30 CN CN201611083940.7A patent/CN106788289B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5361156A (en) * | 1991-12-09 | 1994-11-01 | Scientific-Atlanta, Inc. | Method and apparatus for predistortion |
| CN1346554A (en) * | 1998-08-25 | 2002-04-24 | 奥泰尔公司 | In-line predistorter for linearization of electronic and optical signals |
| CN1326611A (en) * | 1998-09-17 | 2001-12-12 | 通用仪器公司 | In-line, unbalanced amplifier, pre-distortion circuit |
| CN1359558A (en) * | 1999-04-01 | 2002-07-17 | 通用仪表公司 | Non-linear distortion generator |
| CN2768325Y (en) * | 2005-01-17 | 2006-03-29 | 林锦芳 | Pre-distortion optical transmitter |
| CN101951230B (en) * | 2010-09-03 | 2012-07-04 | 华东师范大学 | Broadband low noise amplifier |
| CN103444102A (en) * | 2011-01-13 | 2013-12-11 | 美商祥茂光电科技股份有限公司 | System and method for distortion compensation in response to frequency detection |
| CN102496844A (en) * | 2011-12-07 | 2012-06-13 | 天津大学 | Complementary metal oxide semiconductor (CMOS) laser driving circuit for fourth generation (4G) radio-over-fiber |
| CN202334441U (en) * | 2011-12-09 | 2012-07-11 | 德明通讯(上海)有限公司 | Controllable attenuation predistortion circuit |
| CN103346741A (en) * | 2013-07-31 | 2013-10-09 | 东南大学 | Double-circuit noise canceling type current-reuse low noise amplifier |
Non-Patent Citations (2)
| Title |
|---|
| 单片集成低功耗神经信号检测CMOS放大器;王余峰等;《半 导 体 学 报》;20060831;第27卷(第8期);全文 |
| 射频发射模块非线性效应的消除方法;杨 俊等;《国 防 科 技 大 学 学 报 》;20101231;第32卷(第4期);全文 |
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