CN106787735A - H bridges TEC controls circuit - Google Patents
H bridges TEC controls circuit Download PDFInfo
- Publication number
- CN106787735A CN106787735A CN201710120543.0A CN201710120543A CN106787735A CN 106787735 A CN106787735 A CN 106787735A CN 201710120543 A CN201710120543 A CN 201710120543A CN 106787735 A CN106787735 A CN 106787735A
- Authority
- CN
- China
- Prior art keywords
- pmos
- nmos
- tec
- bridges
- electric capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
- F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
- F25B2321/02—Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
- F25B2321/021—Control thereof
- F25B2321/0212—Control thereof of electric power, current or voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The present invention provides a kind of H bridges TEC controls circuit, including a PMOS, the 2nd PMOS, a NMOS and the 2nd NMOS, first PMOS is connected VCC with the source electrode of the 2nd PMOS, the drain electrode of the first PMOS is connected with the source electrode of a NMOS, the drain electrode of the 2nd PMOS is connected with the source electrode of the 2nd NMOS, the grounded drain of the 2nd PMOS and the 2nd NMOS；It is characterized in that, also include an inductance and electric capacity, described inductance one end is connected with PMOS drain electrodes, the other end is connected with one end of TEC anodes and electric capacity, the negative terminal of TEC is connected with the 2nd PMOS drain electrodes, the other end ground connection of electric capacity, a PMOS, the 2nd PMOS, the base stage of a NMOS and the 2nd NMOS connect pwm signal.Simple circuit of the present invention, low cost, efficiency high.
Description
Technical field
TEC the present invention relates to be used for light emission component in optic communication（Semiconductor cooler）Drive control circuit, especially
It is related to H bridges TEC to control circuit.
Background technology
The pyroelectric effect very little of simple metal, if replacing metal with a N types semiconductor and a P type semiconductor, effect
Should be just much bigger.After switching on power, electron-hole pair is produced near upper contact, interior energy reduces, temperature reduction is outwardly absorbed heat,
Referred to as cold end.The other end is compound because of electron-hole pair, and interior energy increases, and temperature is raised, and to environment heat release, referred to as hot junction.A pair
The temperature difference and cold all very littles produced by semicondcutor thermoelements, practical semiconductor cooler is by much to thermoelectric element
（Semiconductor grain）Formed through in parallel, tandem compound, also referred to as thermoelectric pile.Crystal grain top and bottom covering potsherd that these are combined or
The insulating materials of other heat conduction, in the state of energization, just formed one side absorb heat, while heat release effect.
Temperature control can allow EML lasers（Electroabsorption Modulated Laser）The wavelength locking of luminescence chip is in a fixation
Value, and avoid problem of the typical laser in the wavelength shift of high/low temperature.EML lasers are very sensitive to temperature, so right
The requirement of TEC is also of a relatively high.
The voltage direction at TEC two ends is controlled using H bridges more than existing TEC drive circuits, so that realize heating or freeze, but
The filter circuit of existing H bridges uses symmetrical structure, as shown in figure 1, this kind of H bridge floors product is big, it is less efficient.
The content of the invention
The technical problems to be solved by the invention are to provide the H bridges TEC control circuits of a kind of succinct, low cost, efficiency high.
To achieve the above object, the present invention provides following technical scheme：
The present invention provides a kind of H bridges TEC controls circuit, including a PMOS, the 2nd PMOS, a NMOS and the 2nd NMOS, institute
State a PMOS and VCC is connected with the source electrode of the 2nd PMOS, the drain electrode of a PMOS is connected with the source electrode of a NMOS, the 2nd PMOS
Drain electrode be connected with the source electrode of the 2nd NMOS, the grounded drain of a NMOS and the 2nd NMOS；Characterized in that, also including an electricity
Sense and electric capacity, described inductance one end are connected with PMOS drain electrodes, and the other end is connected with one end of TEC anodes and electric capacity, TEC's
Negative terminal is connected with the 2nd PMOS drain electrodes, the other end ground connection of electric capacity, a PMOS, the 2nd PMOS, a NMOS and second
The base stage of NMOS connects pwm signal.
Preferably, when TEC freezes, electric current flows to TEC negative terminals by TEC anodes, and the 2nd NMOS connects high level, the 2nd PMOS2
Low level is connect with a NMOS1, the dutycycle for adjusting a PMOS carrys out control electric current size；When TEC is heated, electric current is born by TEC
End flows to TEC anodes, and a NMOS connects high level, and a PMOS and the 2nd NMOS connect low level, by adjusting the 2nd PMOS's
Dutycycle carrys out control electric current size.
Compared with prior art, the beneficial effects of the invention are as follows：
The present invention is built into simple H-bridge circuit to realize that TEC drives using two PMOS, two NMOS, simple circuit, cost
It is cheap.The voltage difference between TEC anodes and TEC negative terminals is controlled by adjusting the dutycycle of PWM so as to control the electricity of TEC7
Stream, using asymmetrical single-ended LC so as to reduce the power consumption of H bridges, improves the operating efficiency of H bridges.As shown in figure 3, H of the invention
Bridge operating efficiency can reach more than 79% when TEC electric currents are 0.5A.
Brief description of the drawings
Fig. 1 is prior art H bridges TEC control circuit diagrams.
Fig. 2 is H bridges TEC controls circuit diagram of the present invention.
Fig. 3 is TEC controls circuit operating efficiency figure of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
H bridges of the invention include a PMOS1, the 2nd PMOS2, a NMOS3 and the 2nd NMOS4, a PMOS1
VCC is connected with the source electrode of the 2nd PMOS2, the drain electrode of a PMOS1 is connected with the source electrode of a NMOS3, the drain electrode of the 2nd PMOS2
Source electrode with the 2nd NMOS4 is connected, the grounded drain of a NMOS3 and the 2nd NMOS4.The one end of inductance 5 drains with a PMOS1
Connection, the other end is connected with one end of TEC7 anodes and electric capacity 6, and the negative terminal of TEC7 is connected with the 2nd PMOS2 drain electrodes, electric capacity 6
The other end is grounded.
First PMOS1, the 2nd PMOS2, the base stage of a NMOS3 and the 2nd NMOS4 are respectively connected to pwm signal, the PWM
Signal is generated and controlled by MCU, and H bridges operation principle of the present invention is as follows：First, TEC7 refrigeration, i.e., electric current is by TEC anodes（+）Flow direction
TEC negative terminals（-）.At this moment the 2nd NMOS4 is high level, and a 2nd PMOS2 and NMOS3 is low level, the first PMOS1's of regulation
Dutycycle carrys out control electric current size；2nd, TEC7 heating, electric current is by TEC negative terminals（-）Flow to TEC anodes（+）, an at this moment NMOS3
It is high level, a PMOS1 and the 2nd NMOS4 is low level, by adjusting the dutycycle of the 2nd PMOS2 come the big of control electric current
It is small.
Inductance of the invention 5 and electric capacity 6 form a typical DCDC circuit, and inductance 5 realizes that adjustment TEC+ holds equal electricity level with both hands
Pressure, but output voltage is zigzag wave, and electric capacity 6 plays copped wave, and TEC+ terminal voltage signals are changed into direct current model.
The present invention is built into simple H-bridge circuit to realize that TEC drives using two PMOS, two NMOS, simple circuit,
It is with low cost.The voltage difference between TEC anodes and TEC negative terminals is controlled by adjusting the dutycycle of PWM so as to control TEC7's
Electric current, using asymmetrical single-ended LC so as to reduce the power consumption of H bridges, improves the operating efficiency of H bridges.As shown in figure 3, of the invention
H bridges operating efficiency can reach more than 79% when TEC electric currents are 0.5A.
Claims (2)
1. a kind of H bridges TEC controls circuit, an including PMOS（1）, the 2nd PMOS（2）, a NMOS（3）With the 2nd NMOS
（4）, a PMOS（1）With the 2nd PMOS（2）Source electrode connection VCC, a PMOS（1）Drain electrode and a NMOS（3）
Source electrode connection, the 2nd PMOS（2）Drain electrode and the 2nd NMOS（4）Source electrode connection, a NMOS（3）With the 2nd NMOS（4）
Grounded drain；It is characterized in that：Also include an inductance（5）With electric capacity（6）, the inductance（5）One end and a PMOS（1）Leakage
Pole connection, the other end and TEC（7）Anode and electric capacity（6）One end connection, TEC（7）Negative terminal and the 2nd PMOS（2）Drain electrode connects
Connect, electric capacity（6）The other end ground connection, a PMOS（1）, the 2nd PMOS（2）, a NMOS（3）With the 2nd NMOS（4）'s
Base stage connects pwm signal.
2. H bridges TEC as claimed in claim 1 controls circuit, it is characterised in that：When TEC freezes, electric current is flowed to by TEC anodes
TEC negative terminals, the 2nd NMOS（4）It is high level, the 2nd PMOS（2）With a NMOS（3）It is low level, adjusts a PMOS（1）
Dutycycle carry out control electric current size；When TEC is heated, electric current flows to TEC anodes, a NMOS by TEC negative terminals（3）It is electricity high
It is flat, a PMOS（1）With the 2nd NMOS（4）It is low level, by adjusting the 2nd PMOS（2）Dutycycle to carry out control electric current big
It is small.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710120543.0A CN106787735A (en) | 2017-03-02 | 2017-03-02 | H bridges TEC controls circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710120543.0A CN106787735A (en) | 2017-03-02 | 2017-03-02 | H bridges TEC controls circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106787735A true CN106787735A (en) | 2017-05-31 |
Family
ID=58960764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710120543.0A Pending CN106787735A (en) | 2017-03-02 | 2017-03-02 | H bridges TEC controls circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106787735A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110011537A (en) * | 2019-05-09 | 2019-07-12 | 广州金升阳科技有限公司 | A kind of switch converters and its control method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1967427A (en) * | 2005-11-17 | 2007-05-23 | 中国科学院半导体研究所 | Temperature-controlled method and module for large area planar light wave circuit |
| CN102176377A (en) * | 2011-01-31 | 2011-09-07 | 李纯廉 | Method for controlling temperature of electrolytic capacitor and temperature-controllable electrolytic capacitor using same |
| CN203851009U (en) * | 2014-01-24 | 2014-09-24 | 赛伦（厦门）新材料科技有限公司 | Semiconductor refrigeration sheet single-power-supply current commutation circuit |
| CN104282643A (en) * | 2014-09-28 | 2015-01-14 | 武汉飞恩微电子有限公司 | Microsensor temperature control system based on TEC |
| CN105843282A (en) * | 2016-03-23 | 2016-08-10 | 武汉光迅科技股份有限公司 | Temperature control device and temperature control method based on FPGA for optical amplifier |
-
2017
- 2017-03-02 CN CN201710120543.0A patent/CN106787735A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1967427A (en) * | 2005-11-17 | 2007-05-23 | 中国科学院半导体研究所 | Temperature-controlled method and module for large area planar light wave circuit |
| CN102176377A (en) * | 2011-01-31 | 2011-09-07 | 李纯廉 | Method for controlling temperature of electrolytic capacitor and temperature-controllable electrolytic capacitor using same |
| CN203851009U (en) * | 2014-01-24 | 2014-09-24 | 赛伦（厦门）新材料科技有限公司 | Semiconductor refrigeration sheet single-power-supply current commutation circuit |
| CN104282643A (en) * | 2014-09-28 | 2015-01-14 | 武汉飞恩微电子有限公司 | Microsensor temperature control system based on TEC |
| CN105843282A (en) * | 2016-03-23 | 2016-08-10 | 武汉光迅科技股份有限公司 | Temperature control device and temperature control method based on FPGA for optical amplifier |
Non-Patent Citations (1)
| Title |
|---|
| 高加林，郭微波: "《一种高效率TEC温度控制器的设计》", 《集成电路通讯》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110011537A (en) * | 2019-05-09 | 2019-07-12 | 广州金升阳科技有限公司 | A kind of switch converters and its control method |
| CN110011537B (en) * | 2019-05-09 | 2020-08-18 | 广州金升阳科技有限公司 | Switch converter and control method thereof |
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|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170531 |
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| WD01 | Invention patent application deemed withdrawn after publication |