CN106785885B - Integrated device of multi-channel interference laser and semiconductor optical amplifier - Google Patents
Integrated device of multi-channel interference laser and semiconductor optical amplifier Download PDFInfo
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- CN106785885B CN106785885B CN201611039594.2A CN201611039594A CN106785885B CN 106785885 B CN106785885 B CN 106785885B CN 201611039594 A CN201611039594 A CN 201611039594A CN 106785885 B CN106785885 B CN 106785885B
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- optical amplifier
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- interference laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Abstract
The invention relates to a device integrating a multichannel interference laser and a semiconductor optical amplifier. The device mainly comprises a multi-channel interference laser, a semiconductor optical amplifier and an end face connecting device between the multi-channel interference laser and the semiconductor optical amplifier. The end face connecting device is used for isolating and connecting the multimode interference laser and the semiconductor optical amplifier by using an etched groove, a deep-etched grating, a chirped grating or a multimode interference reflector. The semiconductor optical amplifier is used for forward bias amplifying the output light of the multi-mode interference laser or reverse bias filtering the disordered output in the wavelength switching process of the multi-channel interference laser; the invention can realize the tuning of the wavelength in a large range and the amplification adjustment of the output optical power. The problems that a multi-channel interference laser is insufficient in output light power, the output light power difference of different wavelengths is large and the like are solved.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to a device integrating a multichannel interference laser and a semiconductor optical amplifier.
Background
With the rapid development of modern optical communication technology, tunable semiconductor lasers have been widely researched and paid attention to. For example, in a wavelength division multiplexing system, the tunable semiconductor laser can replace a plurality of lasers with fixed wavelengths, so that the cost of a standby light source is greatly reduced, and timely and effective inventory management and channel quick establishment functions can be provided. Due to the loss, the intensity of the optical signal gradually decreases as the transmission distance increases when the optical signal is transmitted in the optical fiber. In order to enable the optical signal to be transmitted further, there is a certain requirement (>13dBm) on the output optical power of the light source at the light emitting end. Although the output optical power can be increased by increasing the injection current of the active region of the laser, the excessive injection current of the active region brings new problems, such as increased heat generation, degraded device performance, and the like. The injection current in the active region of the laser cannot generally be too large. To overcome this problem, the output optical power of the laser can be amplified by integrating a semiconductor optical amplifier at the output of the tunable semiconductor laser. When the semiconductor optical amplifier is forward biased, the number of particles in the active region of the semiconductor optical amplifier is inverted, and after output light of the laser enters the semiconductor optical amplifier, the optical power can be amplified due to stimulated radiation. In addition, modern optical communication systems require tunable semiconductor lasers with power variations of less than 1dB or even less for different output wavelengths. For a tunable semiconductor laser, the output optical power of different wavelengths often changes greatly due to the influence of free carrier absorption caused by injection current. Therefore, the semiconductor optical amplifier can be used for amplifying the output optical power of the tunable laser and compensating the output optical power with different wavelengths, so that the change of the output optical power with different wavelengths is reduced. In modern optical communication networks, there is also a requirement for the spectral purity of the light source. However, tunable semiconductor lasers inevitably produce some transient modes when the wavelength is switched. The semiconductor optical amplifier is reversely biased, and can absorb the output light of the tunable laser. With this, the reverse biased semiconductor optical amplifier can absorb the output light of the tunable semiconductor laser when the wavelength of the tunable semiconductor laser is switched so as to avoid unwanted wavelengths from entering the optical network.
The end face connection device between the tunable laser and the semiconductor optical amplifier has various implementation modes: deep etched grooves, deep etched gratings, chirped gratings, and multimode interference reflectors. A deep groove is carved between the laser and the semiconductor optical amplifier, and two groove surfaces of the groove respectively form end surfaces of the laser and the semiconductor optical amplifier. The deep etching grating and the chirped grating reflect light in a large wavelength range to the laser by the grating, and transmit the light to the semiconductor optical amplifier. The difference is that: the deep etched grating has large reflection bandwidth because the coupling coefficient is large and the grating is short; chirped gratings achieve large reflection bandwidths by reflecting different wavelengths through gratings of different periods. The multimode interference reflector utilizes multimode interference and total reflection, theoretically 50% of light is reflected back to the laser cavity by the original circuit, and 50% of light enters the semiconductor optical amplifier.
The multichannel interference laser (patent application number: 2014107047390) is a novel large-range tunable laser, the tuning range of the multichannel interference laser exceeds 50 nanometers and is enough to cover the C wave band of the whole communication, and the side mode suppression ratio exceeds 40dB in the whole tuning range. Therefore, the multi-channel interference laser has great commercial application potential and value. However, the multi-channel interference laser also has the above problems.
Disclosure of Invention
The invention aims to solve the technical problem of providing a device integrating a multichannel interference laser and a semiconductor optical amplifier, and overcoming the defects of insufficient output power, large power difference of different wavelengths and the like of the traditional multichannel interference laser.
In order to solve the technical problem, the invention provides a device integrating a multichannel interference laser and a semiconductor optical amplifier, which comprises the multichannel interference laser, the semiconductor optical amplifier and an end face connecting device between the laser and the semiconductor optical amplifier.
The multi-channel interference laser is used for tuning and outputting light with specified wavelength.
The semiconductor optical amplifier is used for forward bias amplification and compensation of output optical power of the multichannel interference laser and reverse bias filtering of disordered output of the multichannel interference laser during wavelength switching.
And the end face connecting device between the multichannel interference laser and the semiconductor optical amplifier is used for isolating the multichannel interference laser from the semiconductor optical amplifier and connecting the multichannel interference laser with the semiconductor optical amplifier.
The multi-channel interference laser, the end face connecting device and the semiconductor optical amplifier are sequentially connected. Part of light in the cavity of the multichannel interference laser is reflected back to the multichannel interference laser through the end face connecting device for resonance mode selection, and part of light enters the semiconductor optical amplifier through the end face connecting device; the light entering the semiconductor optical amplifier passes through the semiconductor optical amplifier and is then output from the other end face of the semiconductor optical amplifier.
The end face connecting device adopts etched grooves, deep etched gratings, chirped gratings, multimode interference reflectors and the like.
The invention is based on the multi-channel interference laser and the semiconductor optical amplifier, and can realize the tuning of the wavelength in a large range and the amplification adjustment of the output optical power. The problems that a multi-channel interference laser is insufficient in output light power, the output light power difference of different wavelengths is large and the like are solved.
Drawings
The technical solution of the present invention will be further specifically described with reference to the accompanying drawings and the detailed description.
Fig. 1 is a block diagram of a device in which a multi-channel interference laser and a semiconductor optical amplifier are integrated.
FIG. 2 is a side view of an etched slot as an end face connection device.
FIG. 3 is a schematic side view of a deep etched grating as an end face connection device.
Figure 4 is a side view of a chirped grating as an end face connection means.
FIG. 5 is a top view of a multimode interference reflector as an end connection device.
Fig. 6 is a schematic diagram of a device in which a multi-channel interference laser is integrated with a semiconductor optical amplifier in an embodiment of the invention.
FIG. 7 is a graph showing the output spectra of semiconductor optical amplifiers of devices in which a multi-channel interference laser is integrated with the semiconductor optical amplifiers at injection currents of 30mA and 50mA, according to an embodiment of the present invention.
FIG. 8 is a spectral overlay of different output wavelengths of a device in which a multi-channel interferometric laser is integrated with a semiconductor optical amplifier in an embodiment of the invention.
Detailed Description
The invention provides a device integrating a multichannel interference laser and a semiconductor optical amplifier. The structural block diagram is shown in fig. 1. The device consists of a multi-channel interference laser 101, a semiconductor optical amplifier 103 and an end face connecting device 102 between the laser and the semiconductor optical amplifier.
The multi-channel interference laser 101 is tuned to output light of a specified wavelength. The semiconductor optical amplifier 103 is used for forward bias amplification and compensation of output optical power of the multichannel interference laser, and reverse bias filtering of transient modes during wavelength switching of the multichannel interference laser. The end face connection device 102 between the laser and the semiconductor optical amplifier is used for the isolation and end face connection of the multi-channel interference laser and the semiconductor optical amplifier.
The end face connection device is respectively shown in fig. 2, fig. 3, fig. 4 and fig. 5, and is respectively selected from a deep etched groove 201, a deep etched grating 301, a chirped grating 401 or a multimode interference reflector 501.
Specifically, the multi-channel interference laser 101, the end face connection device 102, and the semiconductor optical amplifier 103 are sequentially connected in this order. One part of light in the cavity of the multi-channel interference laser is reflected back to the multi-channel interference laser through the end face connecting device for resonance mode selection, and the other part of light enters the semiconductor optical amplifier through the end face connecting device; the light entering the semiconductor optical amplifier passes through the semiconductor optical amplifier and is then output from the other end face of the semiconductor optical amplifier.
When the semiconductor optical amplifier is forward biased, the semiconductor optical amplifier may provide optical gain and optical power of light passing through the semiconductor optical amplifier is amplified. By changing the injection current of the semiconductor optical amplifier, the gain of the semiconductor optical amplifier can be controlled. Therefore, the optical power of the multichannel interference laser with different output wavelengths can be compensated by controlling the magnitude of the injection current of the semiconductor optical amplifier, and the difference of the optical power of different wavelengths is reduced or eliminated; when the semiconductor laser is reverse biased, the semiconductor optical amplifier may absorb light entering the semiconductor optical amplifier. Therefore, when the multi-channel interference laser switches wavelength, the semiconductor optical amplifier is reversely biased, and disordered output can be filtered.
A device for integrating a multi-channel interference laser and a semiconductor optical amplifier according to the present invention will be described in detail with reference to an embodiment, as shown in fig. 6. The device comprises a semiconductor amplifier 601, a dual-port multimode interference reflector 602, and a multichannel interference laser 603. The multi-channel interference laser 603 comprises an active region 604, a common phase section 605, a 1x8 beam splitter consisting of a 1x2 multimode interferometer, and eight arms of different lengths. There is one arm phase region 606 on each arm and a one-port multimode interference reflector 607 at the end of the arm. Electrodes 608 are made on the semiconductor optical amplifier, the active region of the multi-channel interference laser, the common phase region and the 8-arm phase region for current injection.
Injecting current into the active region of the multi-channel interference laser provides optical gain for light within the multi-channel interference laser. Injecting current into the common phase field and the arm phase field causes the eight channels to be mode-selected in phase at a specified wavelength. After light inside the multi-channel interference laser enters the multi-mode interference reflector through one port, 50% of the light is reflected back to the multi-channel interference laser by the multi-mode interference reflector in a primary circuit. Another 50% of the light is output from the other port into the semiconductor optical amplifier. If a current is injected forward into the semiconductor optical amplifier, the semiconductor optical amplifier will further provide optical gain, so that the light passing through the semiconductor optical amplifier is amplified. By varying the amount of current injected into the semiconductor optical amplifier, the amount of optical gain provided by the semiconductor optical amplifier can be controlled. Fig. 7 shows the spectral plots of the output light of the semiconductor optical amplifier of the device at 30mA and 50mA injection currents. As can be seen from fig. 7, the optical power of the output light is significantly amplified at the 50mA injection current.
Fig. 8 shows a superimposed graph of output spectra of different wavelengths when the semiconductor optical amplifier of the device injects a current of 50 mA. The multichannel interference laser still realizes the wavelength tuning in a large range after the multimode interference reflector is integrated with the semiconductor optical amplifier.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (1)
1. A device integrating a multichannel interference laser and a semiconductor optical amplifier is characterized by comprising the multichannel interference laser, the semiconductor optical amplifier and an end face connecting device between the multichannel interference laser and the semiconductor optical amplifier, wherein the multichannel interference laser, the end face connecting device and the semiconductor optical amplifier are sequentially connected;
the multi-channel interference laser is used for tuning and outputting light with specified wavelength;
the semiconductor optical amplifier is used for forward bias amplifying the output optical power of the multi-channel interference laser or reverse bias filtering the disordered output of the multi-channel interference laser in the wavelength switching process;
the end face connecting device is used for isolating the multi-channel interference laser and the semiconductor optical amplifier and connecting the end faces of the multi-channel interference laser and the semiconductor optical amplifier;
part of light in the cavity of the multichannel interference laser is reflected back to the multichannel interference laser through the end face connecting device for resonance mode selection, and part of light enters the semiconductor optical amplifier through the end face connecting device; the light entering the semiconductor optical amplifier passes through the semiconductor optical amplifier and then is output from the other end face of the semiconductor optical amplifier;
the end face connecting device is selected from an etched groove, a deep etched grating, a chirped grating or a multimode interference reflector.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611039594.2A CN106785885B (en) | 2016-11-21 | 2016-11-21 | Integrated device of multi-channel interference laser and semiconductor optical amplifier |
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| CN201611039594.2A CN106785885B (en) | 2016-11-21 | 2016-11-21 | Integrated device of multi-channel interference laser and semiconductor optical amplifier |
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| CN106785885A CN106785885A (en) | 2017-05-31 |
| CN106785885B true CN106785885B (en) | 2020-11-24 |
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| CN111599899B (en) * | 2020-05-27 | 2021-10-01 | 京东方科技集团股份有限公司 | Light emitting diode, driving method thereof, light source device and electronic equipment |
| CN114843880A (en) * | 2021-02-02 | 2022-08-02 | 华为技术有限公司 | Laser device and power adjusting method of optical network terminal |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7277462B2 (en) * | 2004-04-29 | 2007-10-02 | Avago Technologies Fiber (Singapore) Pte. Ltd. | Wide tuneable laser sources |
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| JP5203422B2 (en) * | 2010-06-09 | 2013-06-05 | 古河電気工業株式会社 | Semiconductor laser module |
| CN102082392A (en) * | 2010-12-28 | 2011-06-01 | 中国科学院半导体研究所 | Uniwafer integrated device of tunable laser and light amplifier and fabricating method thereof |
| CN102891433B (en) * | 2012-09-27 | 2014-09-03 | 中国科学院半导体研究所 | Method for manufacturing tunable laser and optical amplifier monolithic integrated device |
| CN103220063B (en) * | 2013-04-18 | 2015-06-03 | 电子科技大学 | All-optical wavelength routing integrated chip |
| CN103795462B (en) * | 2014-01-20 | 2017-02-08 | 北京交通大学 | Method for measuring dispersion of semiconductor optical amplifier |
| EP2993743B1 (en) * | 2014-09-02 | 2017-05-10 | Huawei Technologies Co., Ltd. | Tunable laser and method for tuning a lasing mode |
| CN104393484B (en) * | 2014-11-27 | 2018-05-29 | 华中科技大学 | A kind of a wide range of tuned laser and its tuning methods |
| CN105591283A (en) * | 2016-03-18 | 2016-05-18 | 厦门大学 | Tuning method of grating external cavity semiconductor laser wavelength |
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| US7277462B2 (en) * | 2004-04-29 | 2007-10-02 | Avago Technologies Fiber (Singapore) Pte. Ltd. | Wide tuneable laser sources |
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Effective date of registration: 20210408 Address after: 315191 Unit 701, East Road, Jiangshan Town Science and Technology Park, Yinzhou District, Ningbo City, Zhejiang Province, 43 Patentee after: Ningbo Yuanxin Optoelectronic Technology Co.,Ltd. Address before: 430074 Hubei Province, Wuhan city Hongshan District Luoyu Road No. 1037 Patentee before: HUAZHONG University OF SCIENCE AND TECHNOLOGY |
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