CN106785818A - Profile pump alkali metal vapour laser uses compound wall sealed tube chamber - Google Patents
Profile pump alkali metal vapour laser uses compound wall sealed tube chamber Download PDFInfo
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- CN106785818A CN106785818A CN201611157614.6A CN201611157614A CN106785818A CN 106785818 A CN106785818 A CN 106785818A CN 201611157614 A CN201611157614 A CN 201611157614A CN 106785818 A CN106785818 A CN 106785818A
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- alkali metal
- tube chamber
- metal vapour
- laser
- profile pump
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/034—Optical devices within, or forming part of, the tube, e.g. windows, mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/031—Metal vapour lasers, e.g. metal vapour generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0943—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a gas laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/227—Metal vapour
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
Compound wall sealed tube chamber is used the invention discloses a kind of profile pump alkali metal vapour laser, it is characterised in that including：The closed tube chamber side wall of alkali metal vapour and the end window positioned at the closed tube chamber side wall two ends of alkali metal vapour, the internal face of the closed tube chamber side wall of alkali metal vapour sets feather plucking region, do feather plucking treatment in feather plucking region, the high-reflecting film of the outside wall surface plating correspondence pumping wavelength of the closed tube chamber side wall of alkali metal vapour, form high-reflecting film region, high-reflecting film is corresponding with feather plucking regional location, and the non-coating film area between adjacent high-reflecting film is used as semiconductor pumped light beam incidence region.The present invention can effectively suppress the unwanted oscillation inside steam cavity, effectively reduce associated pump energy loss and corresponding heat burden, be conducive to improving the power output of DPAL systems.
Description
Technical field
The invention belongs to alkali metal field of laser device technology, it is related to a kind of profile pump alkali metal vapour laser to use compound
The closed tube chamber of wall.
Background technology
Diode-end-pumped alkali metal vapour laser (Diode Pumped Alkali Vapor Laser,
DPAL) have saturation gain big, theoretical Stokes efficiency and light-light conversion efficiency high, simple and compact for structure, laser medium without
Poison, later stage process easy, laser output line width, output wavelength and are located at (caesium (Cs) in the response wave band of conventional photo detector：
894.95nm；Rubidium (Rb)：794.98nm；Potassium (K)：770.11nm) the advantages of.Due to that can be taken away by the flowing of gaseous medium
Produced most of heat in laser, therefore the fuel factor of laser can effectively be suppressed.In recent years, semiconductor
Laser pumping alkali metal vapour laser increasingly by various countries attention and obtained it is swift and violent develop, gradually into
Into one of new laser with the fastest developing speed since the new century.
Need to add small point of alkanes in the alkali metal vapour medium of diode-end-pumped alkali metal vapour laser
Sub (such as methane and ethane) accelerates the relaxation rate of upper laser level as buffer gas.In addition, in addition it is also necessary to add buffering
Gas helium carrys out line-width of the broadening to pump light.These buffer gas and in vaporous alkali metal atom need be sealed in
In one glass container of closure.
Although using end pumping structure can obtain light beam coupling efficiency higher and absorption efficiency (>90%), but
In high power pump, such structure has the laser power density converged at incident end window, steam tube chamber
The pumping light power that is absorbed of incidence end will be much larger than exit end, this will cause the imbalance of pumping density on optical axis direction,
The utilization rate of laser medium is declined to a great extent, the direct destruction of incident end window will be also caused when serious.With end pumping
Structure is different, and pump light is mutually orthogonal with laser in profile pump structure, can in the direction of the optical axis by lengthen laser medium come
Increase the absorption total amount of pump light, this is beneficial to be substantially improved the power output of DPAL.In addition, profile pump mode can be with
The temperature control efficiency of steam tube chamber is greatly improved, damage probability of the pump light to transparent steam tube chamber is reduced.Therefore, generally recognize
For profile pump structure is the following main developing direction of high power alkali metal vapour laser.
Relative to end-pumped laser, side-pumped laser has shorter pumping distance, and this is likely to result in alkali
Incomplete absorption of the metal vapors to semiconductor laser pump energy, easily causes the waste of pump energy.To improve pumping energy
The utilization rate of amount, it may be considered that plate one layer of high-reflecting film in the medial surface of steam tube chamber, makes pump light repeatedly past in steam tube chamber
Return.But, other more serious problems will be brought using this structure.On the one hand, it will cause to be reflected back through high-reflecting film
A part for the intraluminal pump light of steam returns to the inside of pumping semiconductor laser, and this will influence semiconductor laser
The characteristics of luminescence and reduce the luminescent lifetime of laser；On the other hand, due to semiconductor laser pumping alkali metal vapour laser
Saturation gain it is very big, the high-reflecting film for being plated will produce serious unwanted oscillation inside steam tube chamber, and this will significantly be damaged
The conversion efficiency of semiconductor laser is consumed, the power output of DPAL is reduced.To solve the above problems, the present invention proposes a kind of side
The pumping alkali metal vapour laser design for being combined wall sealed tube chamber.
The content of the invention
(1) goal of the invention
The purpose of the present invention is：For defect of the prior art, there is provided a kind of profile pump alkali metal vapour laser
With compound wall sealed tube chamber, to improve pumping source utilization rate, the power output of DPAL systems is improved.
(2) technical scheme
In order to solve the above-mentioned technical problem, the present invention provides a kind of profile pump alkali metal vapour laser with compound wall
Closed tube chamber, it includes：The closed tube chamber side wall 7 of alkali metal vapour and the end positioned at the closed two ends of tube chamber side wall 7 of alkali metal vapour
Window 10, the internal face of the closed tube chamber side wall 7 of alkali metal vapour sets feather plucking region 8, and feather plucking treatment, alkali metal are done in feather plucking region 8
The high-reflecting film 5 of the outside wall surface plating correspondence pumping wavelength of the closed tube chamber side wall 7 of steam, forms high-reflecting film region 9, high-reflecting film 5 with beat
The position of hair-fields domain 8 is corresponding, and the non-coating film area 6 between adjacent high-reflecting film 5 is used as semiconductor pumped light beam incidence region.
Wherein, the closed tube chamber inside sets working media.
Wherein, the working media is alkali metal gain media.
Wherein, be filled with buffer gas in the closed tube chamber, buffer gas be helium, methane, ethane, propane or it is several on
State the mixed gas of gas.
The present invention also provides a kind of profile pump alkali metal vapour Optical Maser System, and it includes：Closed tube chamber, is set in close
Cylinder heating-temperature control ring 4 outside stopped pipe chamber, offers semiconductor pumped light beam entry portal on cylinder heating-temperature control ring 4, if
Put the laser source system on the outside of each semiconductor pumped light beam entry portal；Semiconductor pumped light beam entry portal and closed tube chamber
On the position of non-coating film area 6 it is corresponding.
Wherein, each described laser source system includes that semiconductor laser pumping light source 1, volume Bragg grating 2, light beam are whole
Shape lens group 3.
Wherein, the quantity of the laser source system is defined the need for the semiconductor laser side-face pumping structure for setting.
Wherein, the Optical Maser System uses three direction pump modes, sets three laser source systems, three laser lights
Origin system is evenly distributed on outside drum type brake heating-temperature control ring 4.
Wherein, it is encased inside efficient heat transfer medium between the drum type brake heating-temperature control ring 4 and closed tube chamber.
Wherein, the side surface of the drum type brake heating-temperature control ring 4 sets several elongated shape slits as semiconductor pumped light
Beam entrance, with the pump energy through semiconductor laser.
(3) beneficial effect
Profile pump alkali metal vapour laser that above-mentioned technical proposal is provided with compound wall sealed tube chamber, with
Lower beneficial effect：
(1) in the present invention, the lateral surface plating high-reflecting film of steam tube chamber, the pump light that can will be transmitted to tube chamber outer wall is efficient
Turn back in return pipe chamber, it is possible to achieve pump light in chamber multiple reflections making full use of pump energy.
(2) in the present invention, the medial surface of steam tube chamber implements feather plucking treatment, it can be ensured that the pump light for returning to tube chamber will not
Diode-end-pumped source is directly entered, on the premise of pumping source output stability and service life is not influenceed, is use up
Possible pumping source utilization rate high.
(3) present invention can effectively suppress the unwanted oscillation inside steam cavity, effectively reduce associated pump energy
Loss and corresponding heat burden, are conducive to improving the power output of DPAL systems.
(4) present invention can improve pumping homogeneity in cross section orthogonal with the optical axis, this be conducive to building high power,
The alkali metal vapour laser system of high light beam quality.
Brief description of the drawings
Fig. 1 be the closed tube chamber of alkali metal, pumping system and heating-temperature control system cross-sectional view.
Fig. 2 is alkali metal vapour tube chamber three dimensional structure diagram.
Specific embodiment
To make the purpose of the present invention, content and advantage clearer, with reference to the accompanying drawings and examples, to tool of the invention
Body implementation method is described in further detail.
In order to improve utilization rate of the profile pump alkali metal vapour laser to pump light, it is proposed that a kind of semiconductor laser
The device profile pump alkali metal vapour laser design for being combined wall sealed tube chamber.Fig. 1 is and embodiment of the present invention phase
The cross-sectional view of the closed tube chamber of alkali metal, profile pump system and heating-temperature control system of pass, Fig. 2 is and reality of the present invention
Apply the three dimensional structure diagram of the related core component alkali metal vapour tube chamber of example.
The compound wall sealed tube cavity configuration such as Fig. 1 institutes of profile pump alkali metal vapour laser involved in the present invention
Show, it includes：The closed tube chamber side wall 7 of alkali metal vapour and the end window 10 positioned at the closed two ends of tube chamber side wall 7 of alkali metal vapour, alkali
The internal face of the closed tube chamber side wall 7 of metal vapors sets feather plucking region 8, and feather plucking treatment is done in feather plucking region 8, and alkali metal vapour is closed
The high-reflecting film 5 of the outside wall surface plating correspondence pumping wavelength of tube chamber side wall 7, forms high-reflecting film region 9, high-reflecting film 5 and 8, feather plucking region
Put corresponding, the non-coating film area 6 between adjacent high-reflecting film 5 is used as semiconductor pumped light beam incidence region.
The closed tube chamber inside sets working media.The working media is alkali metal gain media.
Buffer gas is filled with closed tube chamber, is the mixed gas of helium, methane, ethane, propane or several above-mentioned gas.
In the present embodiment, feather plucking region is set by closed lumen wall, high-reflecting film is plated in outside wall surface, can made by alkali
Metal vapors absorb after residual pump light when being irradiated to tube chamber medial surface so that there is diffusing reflection in pump light, a part is reflected back
The intraluminal luminous energy of steam can again participate in pumping process；Another part is transmitted to pump light in tube wall by tube chamber lateral surface
Turned back in return pipe wall with high reflectivity, then again pass by the medial surface of steam tube chamber, gone back in the form of diffusing scattering
Inside tube chamber.It is used to solve that gain media lumen diameter is smaller, pump light one way absorbability is limited, pump light when directly reflecting
Semiconductor laser inside will be entered and change its characteristics of luminescence, and side easily produces the problem of unwanted oscillation.
Based on above-mentioned closed tube chamber, shown in reference picture 2, the present embodiment also provides a kind of profile pump alkali metal vapour laser
Device system, including：Closed tube chamber, is set in the cylinder heating-temperature control ring 4 outside closed tube chamber, on cylinder heating-temperature control ring 4
Semiconductor pumped light beam entry portal is offered, the laser source system on the outside of each semiconductor pumped light beam entry portal is arranged on；
Semiconductor pumped light beam entry portal is corresponding with the position of non-coating film area 6 on closed tube chamber.
Each laser source system includes semiconductor laser pumping light source 1, volume Bragg grating 2, beam shaping lens group
3。
The quantity of laser source system is defined the need for the semiconductor laser side-face pumping structure for setting.
In the present embodiment, it is preferred to use three direction pump modes, three laser source systems, three LASER Light Source systems are set
System is evenly distributed on outside drum type brake heating-temperature control ring 4.
According to actual needs, efficient heat transfer medium can be encased inside between drum type brake heating-temperature control ring 4 and closed tube chamber.
The side surface of drum type brake heating-temperature control ring 4 sets several elongated shape slits as semiconductor pumped light beam entry portal,
With the pump energy through semiconductor laser.
The present invention proposes a kind of semiconductor laser side-face pumping alkali metal vapour laser with compound wall sealed tube chamber
Design.First, the medial surface in the steam tube chamber carries out feather plucking treatment, and pump light can so be irradiated in tube chamber
There is diffusing reflection during side, will not directly be reflected back diode-end-pumped source by the pump light after diffusing reflection, thus
Avoid the influence to semiconductor laser pumping source zlasing mode and output stability.Additionally, the feather plucking of steam tube chamber medial surface
Treatment can also effectively suppress the unwanted oscillation inside alkali metal vapour tube chamber.Then, the lateral surface of the steam tube chamber is coated with one
Layer is all turned back back steam pipe for the high-reflecting film of pumping laser centre wavelength, the pump light that can so will be transmitted to lateral wall
In chamber.Line width through the semiconductor laser beam for narrowing it is collimated-focusing system after in alkali metal vapour chamber by repeatedly it is past
Return, pump energy can be fully utilized.So the result for the treatment of, can not influence semiconductor laser pumping source to light
On the premise of characteristic, the service efficiency in semiconductor laser pumping source is greatly improved, while alkali metal vapour chamber can also effectively be suppressed
Internal unwanted oscillation.
In a kind of profile pump alkali metal vapour Optical Maser System of the present invention, the pump light that semiconductor laser light resource 1 sends
Sequentially pass through the incident use of volume Bragg grating 2, beam shaping lens group 3, steam tube chamber lateral surface semiconductor laser pumping light beam
The closed tube chamber side wall 7 of non-coating film area 6, alkali metal vapour, steam tube chamber medial surface semiconductor laser pumping light beam is incident uses
Non- feather plucking region 9 after be incident to the inside of steam tube chamber, the pump light not fully absorbed by alkali metal vapour state medium is incident
There is diffusing reflection in the rear portion of feather plucking region 8 to opposite side steam tube chamber medial surface, the pump light for being reflected is reflexed to again
By alkali metal vapour state medium double absorption in closed steam tube chamber, the part without being diffusely reflected then is transmitted to alkali metal steaming
Inside the tube wall in tracheae chamber 7, after the high-reflecting film 5 plated through steam tube chamber lateral surface reflects, it is again introduced into tube chamber by alkali metal
Vaporous Absorption of Medium.Such process can repeatedly circulate generation, and pump light can repeatedly be absorbed and be utilized.
By above-mentioned technical proposal as can be seen that the present invention has following distinguishing feature：
1st, the high-reflecting film that steam tube chamber lateral surface of the present invention is plated, can will be transmitted to the pump light of steam tube chamber lateral surface
It is reflected back inside tube chamber, makes this part pump beam be able to repeatedly come and go inside tube chamber, pump energy can be made by alkali metal
Steam is fully absorbed.Do so can improve the pumping homogeneity in cross section orthogonal with the optical axis, be conducive to building high beam
The alkali metal vapour laser system of quality.
2nd, the incident non-coating film area of the steam tube chamber lateral surface semiconductor laser pumping light beam, can swash semiconductor
Optical pumping is incident to inside alkali metal vapour tube chamber with compared with low-loss.
3rd, the feather plucking region of the alkali metal vapour tube chamber medial surface, can make not fully absorbed by alkali metal vapour state medium
Pump light there is diffusing reflection when being irradiated to tube chamber medial surface, a part of pump light is diffusely reflected back pumping again in steam tube chamber
Laser medium, and another part to be transmitted to pump light in the wall of steam tube chamber side anti-through high-reflecting film that steam tube chamber lateral surface is plated
Turned back after penetrating in steam tube chamber.In this way it can be ensured that the overwhelming majority turned back to the pump light of tube chamber will not be directly entered and partly lead
Body laser pumping source, is conducive to improving the output stability and service life of pumping source, while pumping higher can be obtained
Capacity usage ratio.Furthermore it is also possible to effectively suppress the unwanted oscillation inside steam cavity, associated heat burden is reduced, favorably
In the power output for improving DPAL systems.
4th, the incident non-feather plucking region of the steam tube chamber medial surface semiconductor laser pumping light beam, can swash semiconductor
It is incident to inside alkali metal vapour tube chamber to optical pumping light low-loss.
5th, the system can effectively suppress unwanted oscillation of the high gain lasers medium in steam cavity, effectively reduce because of parasitism
The loss to pump energy and the heat burden brought are vibrated, to improve the power output of laser；Can be by unabsorbed pump
Pu light energy is repeatedly efficiently reflected back in closed steam tube chamber, is conducive to strengthening pumping utilization rate, improves light-light conversion effect
Rate；The pumping homogeneity in cross section orthogonal with the optical axis can be improved, is conducive to building high light beam quality, high-power alkali gold
Category vapor laser system；May insure that the most pump lights for returning to tube chamber will not directly return to pumping semiconductor laser,
Be conducive to improving the output stability and service life in semiconductor laser pumping source.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, on the premise of the technology of the present invention principle is not departed from, some improvement and deformation can also be made, these improve and deform
Also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of profile pump alkali metal vapour laser uses compound wall sealed tube chamber, it is characterised in that including：Alkali metal steams
Airtight stopped pipe chamber side wall (7) and the end window (10) positioned at closed tube chamber side wall (7) two ends of alkali metal vapour, alkali metal vapour is closed
The internal face of tube chamber side wall (7) sets feather plucking region (8), and feather plucking region (8) do feather plucking treatment, the closed tube chamber side of alkali metal vapour
The high-reflecting film (5) of the outside wall surface plating correspondence pumping wavelength of wall (7), forms high-reflecting film region (9), high-reflecting film (5) and feather plucking region
(8) position is corresponding, and the non-coating film area (6) between adjacent high-reflecting film (5) is used as semiconductor pumped light beam incidence region.
2. profile pump alkali metal vapour laser as claimed in claim 1 uses compound wall sealed tube chamber, it is characterised in that
The closed tube chamber inside sets working media.
3. profile pump alkali metal vapour laser as claimed in claim 2 uses compound wall sealed tube chamber, it is characterised in that
The working media is alkali metal gain media.
4. profile pump alkali metal vapour laser as claimed in claim 1 uses compound wall sealed tube chamber, it is characterised in that
Buffer gas is filled with the closed tube chamber, buffer gas is the mixing of helium, methane, ethane, propane or several above-mentioned gas
Gas.
5. a kind of profile pump alkali metal vapour Optical Maser System, it is characterised in that including：Closed tube chamber, is set in sealed tube
Cylinder heating-temperature control ring (4) outside chamber, offers semiconductor pumped light beam entry portal in cylinder heating-temperature control ring (4), if
Put the laser source system on the outside of each semiconductor pumped light beam entry portal；Semiconductor pumped light beam entry portal and closed tube chamber
On non-coating film area (6) position it is corresponding.
6. profile pump alkali metal vapour Optical Maser System as claimed in claim 5, it is characterised in that each described laser light
Origin system includes semiconductor laser pumping light source 1, volume Bragg grating 2, beam shaping lens group 3.
7. profile pump alkali metal vapour Optical Maser System as claimed in claim 5, it is characterised in that the LASER Light Source system
The quantity of system is defined the need for the semiconductor laser side-face pumping structure for setting.
8. profile pump alkali metal vapour Optical Maser System as claimed in claim 7, it is characterised in that the Optical Maser System
Using three direction pump modes, three laser source systems are set, three laser source systems be evenly distributed on drum type brake heating-
Temperature control ring (4) is outside.
9. profile pump alkali metal vapour Optical Maser System as claimed in claim 5, it is characterised in that the drum type brake adds
Heat-be encased inside efficient heat transfer medium between temperature control ring (4) and closed tube chamber.
10. profile pump alkali metal vapour Optical Maser System as claimed in claim 5, it is characterised in that the drum type brake adds
The side surface of heat-temperature control ring (4) sets several elongated shape slits as semiconductor pumped light beam entry portal, swashs with through semiconductor
The pump energy of light.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611157614.6A CN106785818A (en) | 2016-12-15 | 2016-12-15 | Profile pump alkali metal vapour laser uses compound wall sealed tube chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611157614.6A CN106785818A (en) | 2016-12-15 | 2016-12-15 | Profile pump alkali metal vapour laser uses compound wall sealed tube chamber |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970787A (en) * | 2018-09-28 | 2020-04-07 | 中国科学院大连化学物理研究所 | Excimer broadband pumping alkali metal laser adopting negative branch confocal unstable cavity structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87108369A (en) * | 1986-12-22 | 1988-09-07 | 光电科技有限公司 | Gas laser |
| CN1085017A (en) * | 1993-08-26 | 1994-04-06 | 东南大学 | Colour change gas laser and motivational techniques thereof |
| CN1254451A (en) * | 1997-03-31 | 2000-05-24 | 美国浓缩有限公司 | Small-size highly efficient laser pump cavity |
| CN103928824A (en) * | 2014-03-28 | 2014-07-16 | 中国科学院长春光学精密机械与物理研究所 | Heat-pipe-type alkali-metal vapor laser device |
| CN103928823A (en) * | 2014-03-28 | 2014-07-16 | 中国科学院长春光学精密机械与物理研究所 | Intracavity heat pipe type alkali metal steam laser |
-
2016
- 2016-12-15 CN CN201611157614.6A patent/CN106785818A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87108369A (en) * | 1986-12-22 | 1988-09-07 | 光电科技有限公司 | Gas laser |
| CN1085017A (en) * | 1993-08-26 | 1994-04-06 | 东南大学 | Colour change gas laser and motivational techniques thereof |
| CN1254451A (en) * | 1997-03-31 | 2000-05-24 | 美国浓缩有限公司 | Small-size highly efficient laser pump cavity |
| CN103928824A (en) * | 2014-03-28 | 2014-07-16 | 中国科学院长春光学精密机械与物理研究所 | Heat-pipe-type alkali-metal vapor laser device |
| CN103928823A (en) * | 2014-03-28 | 2014-07-16 | 中国科学院长春光学精密机械与物理研究所 | Intracavity heat pipe type alkali metal steam laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970787A (en) * | 2018-09-28 | 2020-04-07 | 中国科学院大连化学物理研究所 | Excimer broadband pumping alkali metal laser adopting negative branch confocal unstable cavity structure |
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