CN106784281B - A kind of thin film thermoelectric module - Google Patents
A kind of thin film thermoelectric module Download PDFInfo
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- CN106784281B CN106784281B CN201611153842.6A CN201611153842A CN106784281B CN 106784281 B CN106784281 B CN 106784281B CN 201611153842 A CN201611153842 A CN 201611153842A CN 106784281 B CN106784281 B CN 106784281B
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- 239000010409 thin film Substances 0.000 title claims abstract description 67
- 239000010408 film Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 238000000926 separation method Methods 0.000 claims abstract description 39
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000010931 gold Substances 0.000 claims abstract description 13
- 229910052737 gold Inorganic materials 0.000 claims abstract description 13
- 238000009826 distribution Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 26
- 238000005538 encapsulation Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract 4
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 5
- 230000005619 thermoelectricity Effects 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- 238000012536 packaging technology Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 229910002969 CaMnO3 Inorganic materials 0.000 description 2
- 229910016510 CuCrO2 Inorganic materials 0.000 description 2
- 229910002244 LaAlO3 Inorganic materials 0.000 description 2
- 229910018307 LaxSr1−x Inorganic materials 0.000 description 2
- 229910002372 SrTiO3(001) Inorganic materials 0.000 description 2
- 210000001015 abdomen Anatomy 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910019850 NaxCoO2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of thin film thermoelectric modules, belong to film material with function and devices field.Include: upper N type thermoelectric arm array, is in tilted layout by N-type semiconductor film in the lower surface of single crystalline substrate I；Lower part p-type thermoelectric arm array is in tilted layout by P-type semiconductor film in the upper surface of single crystalline substrate II；Separation layer, including I-shaped interlayer insulating layer and gold electrode array.The upper N type thermoelectric arm array and lower part p-type thermoelectric arm array are separated by the separation layer, and connect into two independent series vias by gold electrode；The relative position of the upper N type thermoelectric arm array, lower part p-type thermoelectric arm array and separation layer is fixed by through-hole, the bolt for being located at its side.The present invention is significantly improved compared to the output power density on existing thin film thermoelectric module unit area, and P, N-type thermoelectric arm can be individually replaced, and configuration is flexible, and substrate is as thin film physics support while plays encapsulation effect, and manufacturing cost is low.
Description
Technical field
The invention discloses a kind of thin film thermoelectric modules, belong to film material with function and devices field.
Background technique
Oxide-base thermoelectric material compares conventional alloys thermoelectric material, have have stable high-temperature performance, inoxidizability and nontoxic
It the advantages that property, receives significant attention, sull electrothermal module also becomes emerging research focus.
The configuration of current thin film electrothermal module is mainly π type, i.e. P, N-type sull are parallel on the same base, hand over
For arrangement, and is connected and be coupled by electrode.According to the use direction of its hot-fluid and material, thin film thermoelectric module can be divided into hot-fluid side again
Two kinds of film surface (in-plnae) is parallel to perpendicular to film surface (cross-plane) and direction of heat flow.cross-
The preparation process of plane electrothermal module is relatively easy, and integrated level is higher, but its thermal resistance along film thickness direction is small, it is difficult to produce
The raw biggish temperature difference, can not apply in many occasions.The thermal resistance of in-plane module is big, is conducive to the foundation of big temperature gradient,
And existing oxide pyroelectric material such as Ca3Co4O9、NaxCoO2、Zn1-xAlxO、CaMnO3The growth of equal films is spontaneous to be selected along c-axis
Excellent, the thermoelectricity capability along the direction in-plane is much higher than the direction cross-plane, therefore sull electrothermal module makes more
With in-plane configuration, but its P-N thermoelectricity is relatively small to integrated level, and the output power density on unit area is small, and electrode is used
Amount is big, and modular manufacture is at high cost.
P, the N-type thermoelectric arm of existing in-plane thin-film module alternately integrate on the same substrate, and such as attached drawing 1, this is wanted
P, the crystal structure of N-type thin-film material, lattice constant and thermal expansion coefficient is asked to be intended to match with substrate and could obtain higher crystalline
The membrane array of quality.But usual P, the structure of N-type thin-film material and performance difference are very big, are difficult to find in practice to combine
P, the substrate of N-type film growth, keeps the selection of substrate very difficult.
Existing in-plane thin-film module makes P, N-type film since its P, N-type thermoelectric arm alternately integrate on the same substrate
Array can not be individually replaced, if a certain P, the N-type film in module are damaged because of oxidation, decomposition, will lead to module entirety
Failure, increases use and the replacement cost of module.
Existing thin film thermoelectric module is in order to improve its stability and service life, in addition to module itself, also needs additional envelope
Technique and encapsulation raw material are filled, the manufacturing cost of module is increased.
Summary of the invention
The purpose of the present invention is to provide a kind of thin film thermoelectric modules, including N-type thermoelectric arm array 1, p-type thermoelectric arm array
2, separation layer 3, N-type thermoelectric arm array 1 include more than one N-type semiconductor film 11 and single crystalline substrate I 12, N-type semiconductor
The inclination of film 11 is grown in single crystalline substrate I 12；P-type thermoelectric arm array 2 includes more than one P-type semiconductor film 21 and list
Brilliant substrate II 22, the inclination of P-type semiconductor film 21 are grown in single crystalline substrate II 22；N-type thermoelectric arm array 1, p-type thermoelectric arm battle array
Column 2 are separated by separation layer 3, and are fixed together, and N-type thermoelectric arm array 1 and p-type thermoelectric arm array 2 are that growth has semiconductor
The one side of film is contacted with separation layer 3；N-type semiconductor film 11 and P-type semiconductor film 21 are in X-shaped cross-distribution, and N-type is partly led
Body thin film 11 and the both ends of P-type semiconductor film 21 are sequentially connected by electrode 5, two independent series vias of formation, and 5, electrode
In the two sides of separation layer 3.
Preferably, separation layer 3 of the present invention includes web 31, wing plate 32, and wing plate 32 is fixed on the both sides of web 31；Abdomen
Plate 31, single crystalline substrate I 12, the length of single crystalline substrate II 22, of same size, 32 height of wing plate is equal to web 31, N-type thermoelectric arm battle array
The sum of column 1, thickness of p-type thermoelectric arm array 2.
Preferably, electrode 5 of the present invention is embedded in, is applied on the web 31 of separation layer 3, and the thickness of electrode 5 is greater than abdomen
The thickness of plate 31, to guarantee the series connection of N-type semiconductor film 11 Yu P-type semiconductor film 21.
Preferably, on the N-type semiconductor film 11 and p-type thermoelectric arm array 2 on N-type thermoelectric arm array 1 of the present invention
P-type semiconductor film 21 quantity it is identical, single thin-film width and relative position in single crystalline substrate are identical.
Preferably, the angle and P-type semiconductor of I 12 long side of N-type semiconductor film 11 of the present invention and single crystalline substrate are thin
Film 21 is identical with the angle of II 22 long side of single crystalline substrate, is labeled as α, and α is 10 ~ 60 °.
Preferably, the relative position of N-type thermoelectric arm array 1 of the present invention, p-type thermoelectric arm array 2 and separation layer 3 is by position
4 bolt of through-hole in 3 side of separation layer is fixed.
Preferably, electrode 5 of the present invention is cylinder, and basal diameter is equal to N-type semiconductor film 11 and P-type semiconductor
The width of single film in film 21.
Preferably, electrode 5 of the present invention is gold electrode.
N-type semiconductor thin-film material of the present invention is thin-film material of all electronics as principal carrier, Ke Yiwei
CaMnO3、Zn1-xAlxO、(ZnO)5In2O3Equal films.
P-type semiconductor thin-film material of the present invention is thin-film material of all holes as principal carrier, Ke Yiwei
CaxCoO2、Ca3Co4O9、CuCrO2Equal films.
Single crystalline substrate I and single crystalline substrate II of the present invention can be according to N, the crystal structure of P-type semiconductor thin-film material, crystalline substance
The matchings factor such as lattice constant, thermal expansion coefficient selects identical or different substrate material, such as Al2O3(0001)、LaAlO3(001)、
SrTiO3(001)、(LaxSr1-x)(AlyTa1-y)O3(001) etc..
The beneficial effects of the present invention are: module integrated level improves, the output power density on unit area is significantly increased,
Under identical operating condition, the space occupied needed for reaching identical output voltage or output power reduces；Substrate material can basis
P, the structure and performance characteristic of N-type semiconductor thin-film material select respectively, and the optional range of substrate is wide, can guarantee P, N-type simultaneously
The crystalline quality of film；Modular configuration is flexible, and P, N-type thermoelectric arm can be individually replaced when failing, rather than module is entirely discarded, and shows
Write the maintenance cost for reducing module；Substrate is used as the essential physical support of thin-film material, and envelope is integrally played to module
It pretends to use, eliminates packaging technology and encapsulation raw material, manufacturing cost reduces.
Detailed description of the invention
Fig. 1 is the configuration of existing π type in-plane thin film thermoelectric module.
Fig. 2 is each component diagram of thin film thermoelectric module of the present invention.
Fig. 3 is the assembling figure of thin film thermoelectric module of the present invention.
In figure: 1- N-type thermoelectric arm array；11-N type semiconductive thin film；12- single crystalline substrate I；2-P type thermoelectric arm array；
21-P type semiconductive thin film；22- single crystalline substrate II；3- separation layer；31- web；32- wing plate；4- through-hole；5- electrode.
Specific embodiment
The present invention is described in more detail in the following with reference to the drawings and specific embodiments, but protection scope of the present invention is not
It is limited to the content.
Embodiment 1
A kind of thin film thermoelectric module, including N-type thermoelectric arm array 1, by N-type semiconductor film 11 in single crystalline substrate I 12
Lower surface is in tilted layout, angle α=10 ° of I 12 long side of N-type semiconductor film 11 and single crystalline substrate；
P-type thermoelectric arm array 2 is in tilted layout by P-type semiconductor film 21 in the upper surface of single crystalline substrate II 22, p-type half
Angle α=10 ° of II 22 long side of conductor thin film 21 and single crystalline substrate, the film quantity of P-type semiconductor film 21, single film are wide
The film quantity of degree and the relative position in single crystalline substrate II 22 and N-type semiconductor film 11, single thin-film width and in list
Relative position on brilliant substrate I 12 is identical.
Separation layer 3, including web 31 and wing plate 32, wing plate 32 are fixed on the both sides of web 31, web 31, single crystalline substrate I
12, the height of the length of single crystalline substrate II 22, of same size, wing plate 32 is equal to web 31, N-type thermoelectric arm array 1, p-type thermoelectricity
The sum of the thickness of arm array 2.
Cylindrical gold electrode 5 is located at the two sides of separation layer 3, and is embedded in, is applied on the web 31 of separation layer 3, and bottom surface is straight
Diameter is equal to individually the width of film, the thickness of gold electrode 5 are greater than the thickness of web 31 in N, P-type semiconductor film 11,21.
N-type thermoelectric arm array 1 and p-type thermoelectric arm array 2 are separated by separation layer 3, N-type thermoelectric arm array 1, p-type thermoelectric arm
The relative position of array 2 and separation layer 3 is fixed by 4 bolt of through-hole for being located at 3 side of separation layer, N-type thermoelectric arm array 1 and p-type
Thermoelectric arm array 2 is that growth has the one side of semiconductive thin film to contact with separation layer 3, N-type semiconductor film 11 and P-type semiconductor
Film 21 is in X-shaped cross-distribution, and is sequentially connected by gold electrode 5, and two independent series vias are formed.
N-type semiconductor film 11 selects CaMnO in the present embodiment3, the selection of p-type semiconductive thin film 21 CaxCoO2, monocrystalline
Substrate I 12 and single crystalline substrate II 22 select LaAlO3(001)。
Thin film thermoelectric module provided in this embodiment integrated level compared with existing thin film thermoelectric module improves, on unit area
Output power density it is big, under identical operating condition, the space occupied needed for reaching identical output voltage or output power
Reduce；Substrate material can select respectively according to P, the structure of N-type thin-film material and performance characteristic, and the optional range of substrate is wide, can
Guarantee the crystalline quality of P, N-type film simultaneously；Modular configuration is flexible, and P, the failure of N-type thermoelectric arm can be individually replaced, and significantly reduces
The maintenance cost of module；Substrate is used as the essential physical support of thin-film material, and integrally plays encapsulation effect to module, saves
Packaging technology and encapsulation raw material are gone, manufacturing cost reduces.
Embodiment 2
A kind of thin film thermoelectric module, including N-type thermoelectric arm array 1, by N-type semiconductor film 11 in single crystalline substrate I 12
Lower surface is in tilted layout, angle α=30 ° of I 12 long side of N-type semiconductor film 11 and single crystalline substrate.
P-type thermoelectric arm array 2 is in tilted layout by P-type semiconductor film 21 in the upper surface of single crystalline substrate II 22, p-type half
Angle α=30 ° of II 22 long side of conductor thin film 21 and single crystalline substrate, the film quantity of P-type semiconductor film 21, single film are wide
The film quantity of degree and the relative position in single crystalline substrate II 22 and N-type semiconductor film 11, single thin-film width and in list
Relative position on brilliant substrate I 12 is identical.
Separation layer 3, including web 31 and wing plate 32, wing plate 32 are fixed on the both sides of web 31, web 31, single crystalline substrate I
12, the height of the length of single crystalline substrate II 22, of same size, wing plate 32 is equal to web 31, N-type thermoelectric arm array 1, p-type thermoelectricity
The sum of the thickness of arm array 2.
Cylindrical gold electrode 5 is located at the two sides of separation layer 3, and is embedded in, is applied on the web 31 of separation layer 3, and bottom surface is straight
Diameter is equal to individually the width of film, the thickness of gold electrode 5 are greater than the thickness of web 31 in N, P-type semiconductor film 11,21.
N-type thermoelectric arm array 1 and p-type thermoelectric arm array 2 are separated by separation layer 3, N-type thermoelectric arm array 1, p-type thermoelectric arm
The relative position of array 2 and separation layer 3 is fixed by 4 bolt of through-hole for being located at 3 side of separation layer, N-type thermoelectric arm array 1 and p-type
Thermoelectric arm array 2 is that growth has the one side of semiconductive thin film to contact with separation layer 3, N-type semiconductor film 11 and P-type semiconductor
Film 21 is in X-shaped cross-distribution, and is sequentially connected by gold electrode 5, and two independent series vias are formed.
N-type semiconductor film 11 selects Zn in the present embodiment1-xAlxO, p-type semiconductive thin film 21 select Ca3Co4O9, single
Brilliant substrate I 12 selects Al2O3(0001), single crystalline substrate II 22 selects SrTiO3(001)。
Thin film thermoelectric module provided in this embodiment integrated level compared with existing thin film thermoelectric module improves, on unit area
Output power density it is big, under identical operating condition, the space occupied needed for reaching identical output voltage or output power
Reduce；Substrate material can select respectively according to P, the structure of N-type thin-film material and performance characteristic, and the optional range of substrate is wide, can
Guarantee the crystalline quality of P, N-type film simultaneously；Modular configuration is flexible, and P, the failure of N-type thermoelectric arm can be individually replaced, and significantly reduces
The maintenance cost of module；Substrate is used as the essential physical support of thin-film material, and integrally plays encapsulation effect to module, saves
Packaging technology and encapsulation raw material are gone, manufacturing cost reduces.
Embodiment 3
A kind of thin film thermoelectric module, including N-type thermoelectric arm array 1, by N-type semiconductor film 11 in single crystalline substrate I 12
Lower surface is in tilted layout, angle α=60 ° of I 12 long side of N-type semiconductor film 11 and single crystalline substrate.
P-type thermoelectric arm array 2 is in tilted layout by P-type semiconductor film 21 in the upper surface of single crystalline substrate II 22, p-type half
Angle α=60 ° of II 22 long side of conductor thin film 21 and single crystalline substrate, the film quantity of P-type semiconductor film 21, single film are wide
The film quantity of degree and the relative position in single crystalline substrate II 22 and N-type semiconductor film 11, single thin-film width and in list
Relative position on brilliant substrate I 12 is identical.
Separation layer 3, including web 31 and wing plate 32, wing plate 32 are fixed on the both sides of web 31, web 31, single crystalline substrate I
12, the height of the length of single crystalline substrate II 22, of same size, wing plate 32 is equal to web 31, N-type thermoelectric arm array 1, p-type thermoelectricity
The sum of the thickness of arm array 2.
Cylindrical gold electrode 5 is located at the two sides of separation layer 3, and is embedded in, is applied on the web 31 of separation layer 3, and bottom surface is straight
Diameter is equal to individually the width of film, the thickness of gold electrode 5 are greater than the thickness of web 31 in N, P-type semiconductor film 11,21.
N-type thermoelectric arm array 1 and p-type thermoelectric arm array 2 are separated by separation layer 3, N-type thermoelectric arm array 1, p-type thermoelectric arm
The relative position of array 2 and separation layer 3 is fixed by 4 bolt of through-hole for being located at 3 side of separation layer, N-type thermoelectric arm array 1 and p-type
Thermoelectric arm array 2 is that growth has the one side of semiconductive thin film to contact with separation layer 3, N-type semiconductor film 11 and P-type semiconductor
Film 21 is in X-shaped cross-distribution, and is sequentially connected by gold electrode 5, and two independent series vias are formed.
N-type semiconductor film 11 selects (ZnO) in the present embodiment5In2O3, the selection of p-type semiconductive thin film 21 CuCrO2,
Single crystalline substrate I 12 selects (LaxSr1-x)(AlyTa1-y)O3(001), single crystalline substrate II 22 selects Al2O3(0001)。
Thin film thermoelectric module provided in this embodiment integrated level compared with existing thin film thermoelectric module improves, on unit area
Output power density it is big, under identical operating condition, the space occupied needed for reaching identical output voltage or output power
Reduce；Substrate material can select respectively according to P, the structure of N-type thin-film material and performance characteristic, and the optional range of substrate is wide, can
Guarantee the crystalline quality of P, N-type film simultaneously；Modular configuration is flexible, and P, the failure of N-type thermoelectric arm can be individually replaced, and significantly reduces
The maintenance cost of module；Substrate is used as the essential physical support of thin-film material, and integrally plays encapsulation effect to module, saves
Packaging technology and encapsulation raw material are gone, manufacturing cost reduces.
Claims (6)
1. a kind of thin film thermoelectric module, it is characterised in that: including N-type thermoelectric arm array (1), p-type thermoelectric arm array (2), isolation
Layer (3), N-type thermoelectric arm array (1) includes that more than one N-type semiconductor film (11) and single crystalline substrate I (12), N-type are partly led
Body thin film (11) inclination is grown in single crystalline substrate I (12)；P-type thermoelectric arm array (2) includes that more than one P-type semiconductor is thin
Film (21) and single crystalline substrate II (22), P-type semiconductor film (21) inclination are grown in single crystalline substrate II (22)；N-type thermoelectric arm
Array (1), p-type thermoelectric arm array (2) are separated by separation layer (3), and are fixed together, N-type thermoelectric arm array (1) and p-type heat
Electric arm array (2) is that growth has the one side of semiconductive thin film to contact with separation layer (3)；N-type semiconductor film (11) and p-type half
Conductor thin film (21) is in X-shaped cross-distribution, and the both ends of N-type semiconductor film (11) and P-type semiconductor film (21) are by electrode (5)
It is sequentially connected, forms two independent series vias, electrode (5) is located at the two sides of separation layer (3)；
The P-type semiconductor film on N-type semiconductor film (11) and p-type thermoelectric arm array (2) on N-type thermoelectric arm array (1)
(21) quantity is identical, and single thin-film width and relative position in single crystalline substrate are identical；
The relative position of N-type thermoelectric arm array (1), p-type thermoelectric arm array (2) and separation layer (3) is by being located at separation layer (3) side
Through-hole (4) bolt fix.
2. thin film thermoelectric module according to claim 1, it is characterised in that: separation layer (3) includes web (31), wing plate
(32), wing plate (32) is fixed on the both sides of web (31)；Web (31), single crystalline substrate I (12), the length of single crystalline substrate II (22)
Degree, it is of same size, wing plate (32) highly be equal to web (31), N-type thermoelectric arm array (1), p-type thermoelectric arm array (2) thickness
The sum of.
3. thin film thermoelectric module according to claim 2, it is characterised in that: the electrode (5) is embedded in and is applied in isolation
On the web (31) of layer (3), the thickness of electrode (5) is greater than the thickness of web (31).
4. thin film thermoelectric module according to claim 1, it is characterised in that: the N-type semiconductor film (11) and monocrystalline
The angle of substrate I (12) long side is identical as the angle of P-type semiconductor film (21) and single crystalline substrate II (22) long side, is labeled as α,
And α is 10 ~ 60 °.
5. thin film thermoelectric module according to claim 1, it is characterised in that: the electrode (5) is cylinder, basal diameter
Equal to the width of film single in N-type semiconductor film (11) and P-type semiconductor film (21).
6. thin film thermoelectric module according to claim 1, it is characterised in that: the electrode (5) is gold electrode.
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| CN107377023B (en) * | 2017-09-08 | 2020-02-14 | 上海萃励电子科技有限公司 | Manufacturing method of temperature-controllable micro-fluidic chip |
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| CN102356305A (en) * | 2010-05-27 | 2012-02-15 | 松下电器产业株式会社 | Thermoelectric conversion device, radiation detector, and radiation detection method using same |
| CN203119810U (en) * | 2013-03-19 | 2013-08-07 | 浙江大学 | Flexible thermoelectric power generation micro-unit structure |
| CN206401363U (en) * | 2016-12-14 | 2017-08-11 | 昆明理工大学 | A kind of thin film thermoelectric module |
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