CN106784104B - A kind of back contact solar cell string and preparation method thereof and component, system - Google Patents
A kind of back contact solar cell string and preparation method thereof and component, system Download PDFInfo
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- CN106784104B CN106784104B CN201710074188.8A CN201710074188A CN106784104B CN 106784104 B CN106784104 B CN 106784104B CN 201710074188 A CN201710074188 A CN 201710074188A CN 106784104 B CN106784104 B CN 106784104B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000001465 metallisation Methods 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000003466 welding Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The present invention relates to a kind of back contact solar cell string and preparation method thereof and components, system, a kind of back contact solar cell string of the invention, including back contact solar cell, the back surface of back contact solar cell includes the region emitter p+ being arranged alternately with each other and the region base stage n+, the region emitter p+ is equipped with emitter and contacts electrode, the region base stage n+ is equipped with base stage and contacts electrode, the present invention contacts electrode by using dotted emitter and base stage, compared to existing wire electrode, considerably reduce the consumption of silver paste, reduce manufacturing cost, simultaneously because the reduction of metallization area, it can reduce due to the bring surface recombination that metallizes, promote the open-circuit voltage of battery.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of back contact solar cell string and its preparation side
Method and component, system.
Background technique
Solar battery is a kind of semiconductor devices for converting light energy into electric energy, lower production cost and higher energy
Amount transformation efficiency is always the target that solar cell industry is pursued.For current conventional solar battery, emitter contact
Electrode and base stage contact electrode are located at the tow sides of cell piece.The front of battery is light-receiving surface, front metal emitter
The sunlight that the covering of contact electrode will cause a part incident is reflected by metal electrode to be blocked, and a part of optics is caused to damage
It loses.The area coverage of the front metal electrode of common crystal silicon solar batteries reduces the front covering of metal electrode 7% or so
The energy conversion efficiency of battery can directly be improved.Back contact solar cell is a kind of that emitter and base stage contact electrode is equal
It is placed on the battery of cell backside (non-illuminated surface), the light-receiving surface of the battery is blocked without any metal electrode, to effectively increase
The short circuit current of cell piece, is improved the energy conversion efficiency of cell piece.
The solar battery of back contact structure is energy in the crystal silicon solar batteries of current solar industryization batch production
A kind of highest battery of transformation efficiency is measured, its high transformation efficiency, low component package cost are deep always to be favored by people.With
Toward back contact solar cell manufacture craft in, metallization process mostly use process it is more complicated plating to realize,
This method has an outstanding performance in the open-circuit voltage for reducing the series resistance of back contact battery, improving battery really, but the party
Method complex process, the waste of discharge seriously pollute environment, and mutually not simultaneous with the mainstream method for metallising of current industrialized production
Hold, therefore is unfavorable for the industrialization promotion of low cost.During back contact battery is packaged into component, due to emitter and
Base electrode radical is more, line width is relatively narrow, and the alignment welding between adjacent cell is extremely difficult.Meanwhile by cell package at
During component, the loss of power greatly comes from welding kesistance and welding resistance, and the short circuit current of monolithic battery is got over
Height, the loss of this Partial Power are bigger.On the other hand, the metal electrode of existing back contact battery is electric in order to meet welding and collection
The requirement of stream, typically linear electrode, the electrocondution slurry of consumption is expensive while can also bring biggish metal composite.
Summary of the invention
A kind of low manufacture cost, conversion are provided it is an object of the present invention to avoiding shortcoming in the prior art
It is high-efficient, Module Dissipation is low, concatenation simple and reliable process, the novel back contact solar cell string based on screen printing technique and
Its component and system.
An object of the present invention is achieved through the following technical solutions:
A kind of back contact solar cell string, including back contact solar cell, the back of back contact solar cell are provided
Surface includes the region emitter p+ being arranged alternately with each other and the region base stage n+, and the region the emitter p+ connects equipped with emitter
Touched electrode, the region the base stage n+ are equipped with base stage and contact electrode, and the emitter contact electrode is set as dotted emitter and connects
Touched electrode, the base stage contact electrode are set as dotted base stage contact electrode.
It wherein, further include conduct piece, the conduct piece includes emitter conductive bar and base stage conductive plate, with a piece of back contacts
The emitter contact electrode and base stage contact electrode of solar battery pass through the insulating layer being arranged on emitter conductive bar and realize
Electrical isolation, the emitter contact electrode and base stage contact electrode of adjacent back contact battery are conductive by emitter conductive bar and base stage
Plate electrical connection.
Wherein, the resistivity of the back contact solar cell is 1-30 Ω cm, with a thickness of 50-300 μm；The transmitting
The pole region the p+ and region the base stage n+ is in long strip distributes alternately in solar battery matrix back surface, the region emitter p+ and
Base stage n+ is additionally provided with dielectric passivation layer on region, the passivation for battery back surface.
Wherein, the width in the region emitter p+ described in each column is 200-3000 μm, the width in the region base stage n+ described in each column
It is 100-2000 μm；The width of emitter conductive bar is not more than the width in the region emitter p+.
Wherein, emitter contact electrode is aerdentalloy electrode, and it is silver electrode, the back contacts sun that base stage, which contacts electrode,
Energy battery is back contacts n type single crystal silicon solar battery.
Wherein, the front surface of emitter conductive bar is electric insulation layer, and back surface is conductive layer.
Wherein, width of the width of single Spot electrodes no more than doped region where it.
The present invention also provides a kind of solar cell module, including solar battery string, the solar battery string be with
The upper back contact solar cell string.
The present invention also provides a kind of solar cell system, including more than one solar cell module, the sun
Energy battery component is above-described solar cell module.
Back contact solar cell string of the invention and its component and system contact electricity using dotted emitter and base stage
Pole compares existing wire electrode, considerably reduces the consumption of silver paste, reduce manufacturing cost, simultaneously because metallization
The reduction of area can reduce due to the bring surface recombination that metallizes, promote the open-circuit voltage of battery.
Back contact solar cell string of the invention and its component and system are by using the conductive bar with insulating layer
It can simply and effectively realize the electrical isolation between two kinds of back contact solar cell contact electrodes.
Back contact solar cell string of the invention and its component and system, it is very big that base stage conductive plate compares common welding
It reduces electrical losses and improves component fill factor.
Back contact solar cell string of the invention and its component and system, concatenation process flow is simple, is not necessarily to high-precision
Welding equipment.
The second object of the present invention is to avoid shortcoming in the prior art and provide a kind of series welding process flow letter
The preparation method of single back contact solar cell string.
The preparation method the following steps are included:
(1), the region emitter p+ being arranged alternately with each other and base stage n+ are formed in the back surface of solar battery matrix
Region forms and is emitted after sintering using screen printing technique in the region emitter p+ and the region base stage n+ type metal slurry
The dotted base stage that the dotted emitter that the pole region p+ is in contact contacts electrode and is in contact with the region base stage n+ contacts electricity
Pole；
(2), the back contact solar cell back surface after step (1) is laid with conduct piece, and conduct piece includes emitter
Conductive bar and base stage conductive plate, wherein emitter conductive bar and emitter contact contact electrode, and base stage conductive plate connects with base stage
Touched electrode is in contact；
(3), the back contact solar cell after step (2) is connected into bunchiness, back surface and the phase of emitter conductive bar
The front surface of the base stage conductive plate of adjacent battery is connected, after the completion of connection, after heating to back contact solar cell string,
Emitter conductive bar contacts electrode formation with emitter by conductive layer and is electrically connected, and base stage conductive plate is formed with base stage contact electrode
Electrical connection, the emitter conductive bar and base stage conductive plate of adjacent cell form electricity by the back surface conductive layer of emitter conductive bar
It is connected, forms back contact solar cell string.
Wherein, in step (1), solar battery matrix is n type single crystal silicon matrix, and the sintering temperature of metal paste is
300-1200℃。
Wherein, in step (2), the width of emitter conductive bar is no more than the width in the region emitter p+, and emitter is conductive
The front surface of item is electric insulation layer, and back surface is conductive layer.
Wherein, in step (3), heating method is infrared heating.
A kind of preparation method of back contact solar cell string of the invention, concatenation process flow is simple, it is high-precision to be not necessarily to
The welding equipment of degree.
Detailed description of the invention
Invention is described further using attached drawing, but the embodiments in the accompanying drawings do not constitute any limitation to the present invention,
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to the following drawings
Its attached drawing.
Fig. 1 is the back surface structure after the preparation method step (1) of the back contact solar cell string of the embodiment of the present invention
Schematic diagram.
Fig. 2 is the back surface structure after the preparation method step (2) of the back contact solar cell string of the embodiment of the present invention
Schematic diagram.
Fig. 3 is the back surface structure after the preparation method step (3) of the back contact solar cell string of the embodiment of the present invention
Schematic diagram.
Fig. 4 be the embodiment of the present invention back contact solar cell string preparation method step (4) after pass through conduct piece
The schematic diagram of back contact solar cell string after concatenation.
Fig. 5 is the structural schematic diagram of the emitter conductive bar in the back contact solar cell string of the embodiment of the present invention.
Include in figure:
The region base stage n+ 10, base stage contact electrode 12；
The region emitter p+ 20, emitter contact electrode 22；
Emitter conductive bar 30, insulating layer 32, conductive layer 34；
Base stage conductive plate 40.
Specific embodiment
The present invention is described in detail below in conjunction with embodiment and attached drawing, it should be pointed out that described reality
It applies example and is intended merely to facilitate the understanding of the present invention, and do not play any restriction effect to it.
Referring to figs. 1 to 5, a kind of back contact solar cell string provided in this embodiment, including the back contacts sun
Energy battery and the conduct piece being electrically connected for back contact solar cell, the back surface of back contact solar cell include mutually handing over
For the region emitter p+ 20 and the region base stage n+ 10 of arrangement, emitter contact electrode 22 is provided on the region emitter p+ 20,
Base stage contact electrode 12 is provided on the region base stage n+ 10, conduct piece includes emitter conductive bar 30 and base stage conductive plate 40, together
The emitter contact electrode 22 and base stage contact electrode 12 of a piece of back contact solar cell are by being arranged in emitter conductive bar
Insulating layer 32 on 30 realizes that electrical isolation, emitter contact electrode 22 and the base stage contact electrode 12 of adjacent back contact battery pass through
Emitter conductive bar 30 and base stage conductive plate 40 are electrically connected, to constitute back contact solar cell string.
Back contact solar cell of the invention contacts electrode using dotted emitter and base stage, compares existing threadiness
Electrode considerably reduces the consumption of silver paste, reduces manufacturing cost, simultaneously because the reduction of metallization area, can subtract
Less due to the bring surface recombination that metallizes, the open-circuit voltage of battery is promoted；By using the conductive bar for having insulating layer
Simply and effectively realize the electrical isolation between two kinds of back contact solar cell contact electrodes；Base stage conductive plate compares common welding
It greatly reduces electrical losses and improves component fill factor；Concatenation process flow is simple, is not necessarily to high-precision welding equipment.
A kind of preparation method of the back contact solar cell string of the present embodiment, comprising the following steps:
(1), it prepares the region emitter p+ 20 and the region base stage n+ 10 is arranged alternately with each other back contacts in silicon wafer back surface
Solar battery, the present embodiment select n type single crystal silicon matrix, and resistivity is 1-30 Ω cm, and with a thickness of 50-300 μm, N-type is brilliant
Body silicon substrate is first handled through surface wool manufacturing using preceding, then realizes battery using technologies such as diffusion or ion implanting, exposure mask, etchings
The region emitter p+ 20 and the region base stage n+ 10 are arranged alternately with each other in battery back surface.Recycle silica, silicon nitride and oxygen
Change the deielectric-coating such as aluminium and carry out the passivation of battery back surface and the passivation and optics anti-reflection of front surface, thus transmitting required for being formed
The pole region p+ 20 and the region base stage n+ 10 are arranged alternately with each other the solar battery in silicon wafer back surface, wherein each column emitter p+
The width in region 20 is 200-3000 μm, and the width in the region base stage n+ 10 is 100-2000 μm.Back contacts after completing step (1)
Solar battery back surface texture schematic diagram is as shown in Figure 1.
(2), the gold with 10 phase Ohmic contact of the region emitter p+ 20 and the region base stage n+ is formed by type metal slurry
Belong to electrode, wherein the emitter contact electrode 22 being in contact with the region emitter p+ 20 is aerdentalloy electrode, with the area base stage n+
The base stage contact electrode 12 that domain 10 is in contact is silver electrode, which is respectively printed at by way of silk-screen printing
On the region silicon wafer back surface emitter p+ 20 and the region base stage n+ 10.Emitter contact electrode 22 and base stage contact electrode 12 are
Spot electrodes, the width of doped region where the width of single Spot electrodes is no more than it.It prints after terminating through once sintered shape
At Ohmic contact, sintering temperature is 300-1200 DEG C.Back contact solar cell back surface structural representation after completing step (2)
Figure is as shown in Figure 2.
(3), the back contact solar cell back surface after step (2) is laid with conduct piece, and conduct piece includes that emitter is led
Electric item 30 and base stage conductive plate 40, wherein emitter conductive bar 30 is in contact with emitter contact electrode 22, base stage conductive plate 40
It is in contact with base stage contact electrode 12.The structure of emitter conductive bar 30 is as shown in figure 5, its width is no more than the region emitter p+
20 width, the basis material of emitter conductive bar 30 are copper or aluminium or other conductive materials, the positive table of emitter conductive bar 30
Face is electric insulation layer 32, and back surface is conductive layer 34, and the material of conductive layer 34 can be conducting resinl or scolding tin.Base stage conductive plate
40 structure is that basis material is copper or aluminium or other conductive materials, and surface covers soldering-tin layer.The sequence for being laid with conduct piece is first
It is laid with emitter conductive bar 30, then re-lays base stage conductive plate 40, since the front surface of emitter conductive bar 30 is electrical isolation
Layer 32, so being electrical isolation between emitter conductive bar 30 and base stage conductive plate 40.Back contact solar after completing step (3)
Battery back surface structural schematic diagram is as shown in Figure 3.
(4), the back contact solar cell after step (3) is connected into bunchiness, back surface and the phase of emitter conductive bar 30
The front surface of the base stage conductive plate 40 of adjacent battery is connected.After the completion of connection, back contact solar cell string is heated,
Heating method is infrared heating.After the completion of heat treatment, emitter conductive bar 30 contacts electrode by conductive layer 34 and emitter
22 formation are electrically connected, and base stage conductive plate 40 is electrically connected with the base stage contact formation of electrode 12, the emitter conductive bar 30 of adjacent cell
It is electrically connected with base stage conductive plate 40 by the formation of back surface conductive layer 34 of emitter conductive bar.So far, that is, present invention back is completed
The preparation of contact solar cell string, structural schematic diagram are as shown in Figure 4.
The present embodiment additionally provides a kind of solar cell module, including solar battery string, and solar battery string is upper
The back contact solar cell string stated.
The present embodiment additionally provides a kind of solar cell system, including more than one solar cell module, the sun
Energy battery component is above-mentioned solar cell module.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than the present invention is protected
The limitation of range is protected, although explaining in detail referring to preferred embodiment to the present invention, those skilled in the art are answered
Work as understanding, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the reality of technical solution of the present invention
Matter and range.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than the present invention is protected
The limitation of range is protected, although explaining in detail referring to preferred embodiment to the present invention, those skilled in the art are answered
Work as understanding, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the reality of technical solution of the present invention
Matter and range.
Claims (12)
1. a kind of back contact solar cell string, including back contact solar cell, the back surface packet of back contact solar cell
The region emitter p+ being arranged alternately with each other and the region base stage n+ are included, the region the emitter p+ is equipped with emitter contact electricity
Pole, the region the base stage n+ are equipped with base stage and contact electrode,
It is characterized by: the emitter contact electrode is set as dotted emitter contact electrode, the base stage contact electrode is set
Electrode is contacted for dotted base stage；
A kind of back contact solar cell string further includes conduct piece, and the conduct piece includes emitter conductive bar and base stage
Conductive plate, the emitter with a piece of back contact solar cell contacts electrode and base stage contacts electrode and led by being arranged in emitter
Insulating layer on electric item realizes that electrical isolation, the emitter contact electrode and base stage contact electrode of adjacent back contact battery pass through transmitting
Pole conductive bar and the electrical connection of base stage conductive plate.
2. a kind of back contact solar cell string as described in claim 1, it is characterised in that: the back contact solar cell
Resistivity be 1-30 Ω cm, with a thickness of 50-300 μm；The region the emitter p+ and the region the base stage n+ are in long strip
It distributes alternately in being additionally provided with dielectric passivation layer on solar battery matrix back surface, the region emitter p+ and the region base stage n+,
Passivation for battery back surface.
3. a kind of back contact solar cell string as described in claim 1, it is characterised in that: the region emitter p+ described in each column
Width be 200-3000 μm, the width in the region base stage n+ described in each column is 100-2000 μm；The width of emitter conductive bar is not
Greater than the width in the region emitter p+.
4. a kind of back contact solar cell string as described in claim 1, it is characterised in that: it is silver-colored aluminium that emitter, which contacts electrode,
Alloy electrode, it is silver electrode that base stage, which contacts electrode, and the back contact solar cell is back contacts n type single crystal silicon solar-electricity
Pond.
5. a kind of back contact solar cell string as described in claim 1, it is characterised in that: the front surface of emitter conductive bar
For electric insulation layer, back surface is conductive layer.
6. a kind of back contact solar cell string as described in claim 1, it is characterised in that: the width of single Spot electrodes is not
Greater than the width of doped region where it.
7. a kind of preparation method of back contact solar cell string, it is characterised in that: the following steps are included:
(1), the region emitter p+ and the region base stage n+ being arranged alternately with each other are formed in the back surface of solar battery matrix,
Using screen printing technique in the region emitter p+ and the region base stage n+ type metal slurry, formed and the area emitter p+ after sintering
The domain dotted emitter contact electrode being in contact and the dotted base stage contact electrode being in contact with the region base stage n+；
(2), the back contact solar cell back surface after step (1) is laid with conduct piece, and conduct piece includes emitter conduction
Item and base stage conductive plate, wherein emitter conductive bar and emitter contact contact electrode, and base stage conductive plate contacts electricity with base stage
Pole is in contact；
(3), the back contact solar cell after step (2) is connected into bunchiness, the back surface of emitter conductive bar and adjacent electricity
The front surface of the base stage conductive plate in pond is connected, after the completion of connection, after heating to back contact solar cell string, and transmitting
Pole conductive bar contacts electrode formation with emitter by conductive layer and is electrically connected, and base stage conductive plate is electrically connected with base stage contact electrode formation
It connects, the emitter conductive bar of adjacent cell forms electric phase by the back surface conductive layer of emitter conductive bar with base stage conductive plate
Even, back contact solar cell string is formed.
8. a kind of preparation method of back contact solar cell string as claimed in claim 7, it is characterised in that: step (1)
In, solar battery matrix is n type single crystal silicon matrix, and the sintering temperature of metal paste is 300-1200 DEG C.
9. a kind of preparation method of back contact solar cell string as claimed in claim 7 or 8, it is characterised in that: step (2)
In, the width of emitter conductive bar is no more than the width in the region emitter p+, and the front surface of emitter conductive bar is electric insulation layer,
Back surface is conductive layer.
10. a kind of preparation method of back contact solar cell string as claimed in claim 7 or 8, it is characterised in that: step
(3) in, heating method is infrared heating.
11. a kind of solar cell module, including solar battery string, it is characterised in that: the solar battery string is right
It is required that any back contact solar cell string of 1-6.
12. a kind of solar cell system, including more than one solar cell module, it is characterised in that: the solar energy
Battery component is solar cell module described in claim 11.
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| CN103165691A (en) * | 2011-12-13 | 2013-06-19 | 三星Sdi株式会社 | Photovoltaic device |
| CN104064608A (en) * | 2014-05-28 | 2014-09-24 | 晶澳（扬州）太阳能科技有限公司 | Main grid-free back-contact solar cell module and preparation method for same |
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| KR101578356B1 (en) * | 2009-02-25 | 2015-12-17 | 엘지전자 주식회사 | Back contact solar cell and Manufacturing method thereof |
| KR101231303B1 (en) * | 2011-05-25 | 2013-02-07 | 현대중공업 주식회사 | Back contact solar cell module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103165691A (en) * | 2011-12-13 | 2013-06-19 | 三星Sdi株式会社 | Photovoltaic device |
| CN104064608A (en) * | 2014-05-28 | 2014-09-24 | 晶澳（扬州）太阳能科技有限公司 | Main grid-free back-contact solar cell module and preparation method for same |
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