CN106784012A - A kind of tin oxide base thin film material of high mobility - Google Patents
A kind of tin oxide base thin film material of high mobility Download PDFInfo
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- CN106784012A CN106784012A CN201611044258.7A CN201611044258A CN106784012A CN 106784012 A CN106784012 A CN 106784012A CN 201611044258 A CN201611044258 A CN 201611044258A CN 106784012 A CN106784012 A CN 106784012A
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- China
- Prior art keywords
- tin oxide
- thin film
- base thin
- film material
- oxide base
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910001887 tin oxide Inorganic materials 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 12
- 239000011701 zinc Substances 0.000 claims abstract description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052718 tin Inorganic materials 0.000 claims abstract description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011787 zinc oxide Substances 0.000 claims abstract description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- 230000032683 aging Effects 0.000 claims description 3
- 238000005352 clarification Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 235000011150 stannous chloride Nutrition 0.000 claims description 3
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical group [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 125000004429 atom Chemical group 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Laminated Bodies (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The invention discloses a kind of tin oxide base thin film material of high mobility, being condensed on surface specifically by sol-gal process has the tin oxide substrate of colloidal sol, the tin oxide substrate includes tin oxide, indium oxide and zinc oxide, atom total content 100at.% meters based on indium, zinc and tin, the atom content scope of tin is 60 to 80at.%, the atom content scope of indium is 10 to 25at.%, and the atom content scope of zinc is 1 to 20at.%.Atom content of the atom content of indium more than zinc in the tin oxide substrate.A kind of tin oxide base thin film material proposed by the present invention, is obtained using sol-gal process, and preparation cost is cheap, process is simple, is adapted to industrialized production.Obtained tin oxide base thin film material mobility is up to 8.6cm2V1S1。
Description
Technical field
The present invention relates to a kind of heat conduction and heat radiation material, more particularly to a kind of high mobility tin oxide base thin film material.
Background technology
With the high speed development of information display technology, oxide semiconductor is obtained for widely in many application fields
Concern.In the past few decades, N-shaped oxide semiconductor material prepare and the application of device in achieve it is huge into
Work(, but the development of p-type oxide semiconductor is also very delayed.
The progress of microelectronics industry and the miniaturization of electronic device, miniaturization, it is integrated be allowed to the power of power supply and
Electric current drops to very low level, and this requires that power supply must also complete the revolution for minimizing, being miniaturized.
N-shaped oxide thin film transistor is combined the bipolar thin film transistor of composition with p-type oxide thin film transistor (TFT)
It is the basis for realizing transparent electronics.Additionally, p-type oxide thin film transistor is more beneficial for driving Organic Light Emitting Diode high
Aperture ratio pixel unit.Meanwhile, the thin film transistor (TFT) of p-type oxide is combined with flat panel display, it will make screen more
Clearly.Tin oxide and its doping system are considered as the huge p-type oxide of application potential.
Because the plurality of advantages of p-type tin oxide base thin film and its market potential are worth, relevant report layer goes out in recent years
It is not poor.But from preparation method, what researcher almost used is all the physical methods such as magnetron sputtering method, and
Prepare environment and be high vacuum condition, film preparation is with high costs.
The content of the invention
The invention aims to solve shortcoming present in prior art, and a kind of oxidation of the high mobility for proposing
Tinbase thin-film material.
To achieve these goals, present invention employs following technical scheme：
A kind of tin oxide base thin film material of high mobility, being condensed on surface specifically by sol-gal process has the oxidation of colloidal sol
Tinbase piece, the tin oxide substrate includes tin oxide, indium oxide and zinc oxide, the atom total content based on indium, zinc and tin
100at.% is counted, and the atom content scope of tin is 60 to 80at.%, and the atom content scope of indium is 10 to 25at.%, the atom of zinc
Content range is 1 to 20at.%.Atom content of the atom content of indium more than zinc in the tin oxide substrate.
The sol-gal process for condensing colloidal sol in tin oxide substrate surface is comprised the following steps：
S1, by EGME, two hydrated stannous chlorides, monoethanolamine according to 10:0.15:0.7 mixed in molar ratio is simultaneously stirred extremely
Clarification obtains mixed solution, and mixed solution heated into 15-30min under the conditions of 60-80 DEG C, heating finish after in argon gas atmosphere
Ageing 1-2 days, is obtained colloidal sol；
S2, tin oxide substrate is fixed on sol evenning machine, is rotated with 2000-2500 revs/min of speed, be added dropwise on substrate molten
Glue, is obtained tin oxide base thin film sample；
S3, tin oxide base thin film sample moves to vacuum tube furnace, vacuumize and be passed through argon gas, then film sample is carried out
Heat drying, drying terminates rear natural cooling；
S4, formaldehyde atmosphere is formed to being passed through formaldehyde vapors in vacuum tube furnace, heated up with 1-3 DEG C/min of speed, to annealing temperature
600-650 DEG C of insulation 10-30min, natural cooling after the completion of annealing is obtained tin oxide base thin film material.
Preferably, the rotational time in the step of sol-gal process S2 is 20-30 seconds.
Preferably, the drying temperature in the step of sol-gal process S3 is 200 DEG C, and drying time is 15-20min.
Compared with prior art, the beneficial effects of the invention are as follows：A kind of tin oxide base thin film material proposed by the present invention, adopts
It is obtained with sol-gal process, preparation cost is cheap, process is simple, is adapted to industrialized production.Obtained tin oxide base thin film material
Mobility is up to 8.6cm2V1S1。
Specific embodiment
The technical scheme in the embodiment of the present invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of embodiment of the invention, rather than whole embodiments.
A kind of tin oxide base thin film material of high mobility, being condensed on surface specifically by sol-gal process has colloidal sol
Tin oxide substrate, the tin oxide substrate includes tin oxide, indium oxide and zinc oxide, the atom total content based on indium, zinc and tin
100at.% is counted, and the atom content scope of tin is 60 to 80at.%, and the atom content scope of indium is 10 to 25at.%, the atom of zinc
Content range is 1 to 20at.%.Atom content of the atom content of indium more than zinc in the tin oxide substrate.
The sol-gal process for condensing colloidal sol in tin oxide substrate surface is comprised the following steps：
S1, by EGME, two hydrated stannous chlorides, monoethanolamine according to 10:0.15:0.7 mixed in molar ratio is simultaneously stirred extremely
Clarification obtains mixed solution, and mixed solution heated into 15-30min under the conditions of 60-80 DEG C, heating finish after in argon gas atmosphere
Ageing 1-2 days, is obtained colloidal sol；
S2, tin oxide substrate is fixed on sol evenning machine, is rotated with 2000-2500 revs/min of speed, be added dropwise on substrate molten
Glue, is obtained tin oxide base thin film sample；
S3, tin oxide base thin film sample moves to vacuum tube furnace, vacuumize and be passed through argon gas, then film sample is carried out
Heat drying, drying terminates rear natural cooling；
S4, formaldehyde atmosphere is formed to being passed through formaldehyde vapors in vacuum tube furnace, heated up with 1-3 DEG C/min of speed, to annealing temperature
600-650 DEG C of insulation 10-30min, natural cooling after the completion of annealing is obtained tin oxide base thin film material.
Preferably, the rotational time in the step of sol-gal process S2 is 20-30 seconds.
Preferably, the drying temperature in the step of sol-gal process S3 is 200 DEG C, and drying time is 15-20min.
A kind of tin oxide base thin film material proposed by the present invention, is obtained using sol-gal process, and preparation cost is cheap, technique
Simply, it is adapted to industrialized production.Obtained tin oxide base thin film material mobility is up to 8.6cm2V1S1。
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto,
Any one skilled in the art the invention discloses technical scope in, technology according to the present invention scheme and its
Inventive concept is subject to equivalent or change, should all be included within the scope of the present invention.
Claims (5)
1. the tin oxide base thin film material of a kind of high mobility, it is characterised in that solidifying on surface specifically by sol-gal process
The tin oxide substrate of colloidal sol is had, the tin oxide substrate includes tin oxide, indium oxide and zinc oxide, based on indium, zinc and tin
Atom total content 100at.% is counted, and the atom content scope of tin is 60 to 80at.%, the atom content scope of indium for 10 to
25at.%, the atom content scope of zinc is 1 to 20at.%.
2. the tin oxide base thin film material of a kind of high mobility according to claim 1, it is characterised in that in tin oxide base
The sol-gal process that piece surface condenses colloidal sol is comprised the following steps：
S1, by EGME, two hydrated stannous chlorides, monoethanolamine according to 10:0.15:0.7 mixed in molar ratio is simultaneously stirred extremely
Clarification obtains mixed solution, and mixed solution heated into 15-30min under the conditions of 60-80 DEG C, heating finish after in argon gas atmosphere
Ageing 1-2 days, is obtained colloidal sol；
S2, tin oxide substrate is fixed on sol evenning machine, is rotated with 2000-2500 revs/min of speed, be added dropwise on substrate molten
Glue, is obtained tin oxide base thin film sample；
S3, tin oxide base thin film sample moves to vacuum tube furnace, vacuumize and be passed through argon gas, then film sample is carried out
Heat drying, drying terminates rear natural cooling；
S4, formaldehyde atmosphere is formed to being passed through formaldehyde vapors in vacuum tube furnace, heated up with 1-3 DEG C/min of speed, to annealing temperature
600-650 DEG C of insulation 10-30min, natural cooling after the completion of annealing is obtained tin oxide base thin film material.
3. a kind of tin oxide base thin film material of high mobility according to claim 1, it is characterised in that the tin oxide
Atom content of the atom content of indium more than zinc in substrate.
4. the tin oxide base thin film material of a kind of high mobility according to claim 2, it is characterised in that the colloidal sol coagulates
Rotational time in the step of glue method S2 is 20-30 seconds.
5. the tin oxide base thin film material of a kind of high mobility according to claim 2, it is characterised in that the colloidal sol coagulates
Drying temperature in the step of glue method S3 is 200 DEG C, and drying time is 15-20min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611044258.7A CN106784012A (en) | 2016-11-24 | 2016-11-24 | A kind of tin oxide base thin film material of high mobility |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611044258.7A CN106784012A (en) | 2016-11-24 | 2016-11-24 | A kind of tin oxide base thin film material of high mobility |
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| Publication Number | Publication Date |
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| CN106784012A true CN106784012A (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611044258.7A Withdrawn CN106784012A (en) | 2016-11-24 | 2016-11-24 | A kind of tin oxide base thin film material of high mobility |
Country Status (1)
| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701383A (en) * | 2015-03-24 | 2015-06-10 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate and manufacturing method thereof and display device |
| CN104726851A (en) * | 2015-03-30 | 2015-06-24 | 中国地质大学（武汉） | Method for preparing p-type tin oxide film material by using sol-gel method |
| CN105420696A (en) * | 2015-11-25 | 2016-03-23 | 中国地质大学（武汉） | Method for preparing stannic oxide-based thin film material |
-
2016
- 2016-11-24 CN CN201611044258.7A patent/CN106784012A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701383A (en) * | 2015-03-24 | 2015-06-10 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate and manufacturing method thereof and display device |
| CN104726851A (en) * | 2015-03-30 | 2015-06-24 | 中国地质大学（武汉） | Method for preparing p-type tin oxide film material by using sol-gel method |
| CN105420696A (en) * | 2015-11-25 | 2016-03-23 | 中国地质大学（武汉） | Method for preparing stannic oxide-based thin film material |
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Application publication date: 20170531 |
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