CN106783897B - A kind of wide spectrum flexible infrared detector array and preparation method thereof - Google Patents
A kind of wide spectrum flexible infrared detector array and preparation method thereof Download PDFInfo
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- CN106783897B CN106783897B CN201710018828.3A CN201710018828A CN106783897B CN 106783897 B CN106783897 B CN 106783897B CN 201710018828 A CN201710018828 A CN 201710018828A CN 106783897 B CN106783897 B CN 106783897B
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- 238000001228 spectrum Methods 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229920000642 polymer Polymers 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 238000004026 adhesive bonding Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 60
- 230000000694 effects Effects 0.000 abstract description 9
- 238000003384 imaging method Methods 0.000 abstract description 8
- 230000003595 spectral effect Effects 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 6
- 230000000007 visual effect Effects 0.000 abstract description 2
- 238000003491 array Methods 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229920005569 poly(vinylidene fluoride-co-hexafluoropropylene) Polymers 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- -1 polypropylene Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229920000915 polyvinyl chloride Polymers 0.000 description 3
- 239000004800 polyvinyl chloride Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007590 electrostatic spraying Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920000131 polyvinylidene Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The present invention relates to a kind of wide spectrum flexible infrared detector arrays, including flexible substrate layer, supporting silicon chip layer and the sensitive thin film layer set gradually from the bottom up；The upper and lower surfaces of sensitive thin film layer have one layer of metallic film as upper and lower electrode respectively, and the overlapping region of upper and lower electrode constitutes effective sensing unit；The sensitive thin film layer is released electric polymer by flexible thermal and is constituted；The production method of above-mentioned wide spectrum flexible infrared detector array is also disclosed simultaneously.Structure of the invention can plastic deformation, its deflection can be adjusted as needed, and so as to adjust its visual range, and sensitive thin film has very wide spectral response range, detecting light spectrum range is larger, therefore the imaging effect that the infrared detector based on this array has higher quality, details richer.
Description
Technical Field
The invention relates to an infrared detector, belongs to the technical field of micro-electronic machinery, and particularly relates to a wide-spectrum flexible infrared detector array and a manufacturing method thereof.
Background
An Infrared Detector (Infrared Detector) is a device that converts an incident Infrared radiation signal into an electrical signal and outputs the electrical signal. Infrared radiation is electromagnetic waves with wavelengths between visible and microwave, and is imperceptible to the human eye. To detect the presence of such radiation and measure its intensity, it must be converted into other physical quantities that can be detected and measured. In general, any effect caused by infrared radiation illuminating an object can be used to measure the intensity of the infrared radiation, provided that the effect is measurable and sensitive enough. The infrared thermal effect and the photoelectric effect are mainly utilized by the modern infrared detector. The output of these effects is largely electrical, or can be converted to electrical by suitable means.
The electronic component flexibility is a great trend of future electronic technology development, and particularly for the emerging intelligent hardware industry, flexible electronic components represented by flexible screens and flexible printed circuit boards have liberated imagination on product forms and subvert forms and experience modes of existing products.
Similarly, for the field of infrared detectors, the current infrared detector array is processed based on semiconductor thermosensitive or photosensitive materials, and has rigid structure and fixed shape; meanwhile, the detectable spectral range based on the materials is smaller, generally in the near infrared range and the intermediate infrared range, the far infrared part emitted by the natural object is wasted, if the wasted infrared radiation is utilized, the imaging details of the thermal infrared imager are richer, and the imaging quality is further improved.
Disclosure of Invention
Based on the technical problems, the invention provides a wide-spectrum flexible infrared detector array, thereby solving the technical problems that the traditional infrared detector has a fixed structure, can not adjust the form and the visible range and has a small detection spectrum range
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a wide-spectrum flexible infrared detector array comprises a flexible substrate layer, a supporting silicon chip layer and a sensitive film layer which are sequentially arranged from bottom to top;
wherein,
the upper surface and the lower surface of the sensitive film layer are respectively provided with a layer of metal film as an upper electrode and a lower electrode, and the overlapped area of the upper electrode and the lower electrode forms an effective sensitive unit;
the sensitive film layer is composed of flexible pyroelectric polymers.
Preferably, the flexible pyroelectric polymer is polyvinylidene fluoride, polyvinylidene fluoride-hexafluoropropylene, polyvinylidene fluoride-trifluoroethylene, odd nylon, polyvinyl chloride or polypropylene.
Preferably, the flexible pyroelectric polymer is doped with one or more of inorganic piezoelectric ceramics, inorganic piezoelectric crystals, metal oxides, carbon nanotubes and graphene.
Preferably, the sensitive film layer is formed by adopting a casting mode, a hot pressing mode, a suspension coating mode or an electrostatic spraying mode.
Preferably, the flexible substrate layer, the supporting silicon chip layer and the sensitive film layer are connected in a gluing mode.
Preferably, the metal film is an aluminum film.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that: the infrared detector based on the array has the advantages that the structure can be flexibly deformed, the deformation amount of the infrared detector can be adjusted according to needs, so that the visual range of the infrared detector can be adjusted, the sensitive film has a very wide spectral response range, and the detection spectral range is large, so that the infrared detector based on the array has imaging effects of high quality and rich details.
Meanwhile, the invention also provides a manufacturing method of the wide-spectrum flexible infrared detector array, which comprises the following steps:
1) fully dissolving the flexible pyroelectric polymer to form a solution, coating the solution on a polishing substrate, baking at high temperature until the solvent is completely volatilized to form a sensitive film, and stripping the sensitive film to form a sensitive film layer;
2) depositing metal films with the same thickness on the upper surface and the lower surface of the sensitive film layer by adopting a magnetron sputtering mode to form an upper electrode and a lower electrode, wherein the overlapped area of the upper electrode and the lower electrode forms an effective sensitive unit;
3) the sensitive film layer is provided with a through hole which leads the lower electrode to the upper surface of the sensitive film layer, and the through hole is filled with metal and is patterned;
4) selecting a thin silicon wafer with the same area and shape as the sensitive film layer, and preparing a strip-shaped through hole on the thin silicon wafer;
5) gluing the sensitive film layer on the thin silicon chip by taking the effective sensitive unit and the center of the strip-shaped through hole as the standard;
6) corroding the thin silicon wafer in an anisotropic corrosion mode to form a separated supporting column structure to form a supporting silicon wafer layer;
7) and (5) gluing the support silicon wafer layer on the flexible substrate layer to complete the manufacturing.
The manufacturing method is simple to operate, each array structure can be prepared in a layered mode and an array is formed, the thickness of the sensitive thin film layer is uniform, the thickness of the upper electrode and the thickness of the lower electrode are fixed and controllable, and the effective sensitive units are arranged corresponding to the centers of the strip-shaped through holes, so that the effective pixels of the array are improved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural view of a sensitive film according to the present invention;
FIG. 3 is a front view of a sensitive film of the present invention;
FIG. 4 is a back side view of a sensitive film of the present invention;
FIG. 5 is a schematic view of a through hole of a sensitive film of the present invention;
FIG. 6 is a schematic structural view of a thin silicon wafer of the present invention;
FIG. 7 is a schematic diagram of the bonding of a thin silicon wafer and a sensitive film according to the present invention;
FIG. 8 is a schematic diagram of the structure of the support wafer layer of the present invention;
the labels in the figure are: 1. a flexible substrate layer; 2. supporting a silicon wafer layer; 3. a sensitive film layer.
Detailed Description
The invention will be further described with reference to the accompanying drawings. Embodiments of the present invention include, but are not limited to, the following examples.
The array of the wide-spectrum flexible infrared detector shown in fig. 1 comprises a flexible substrate layer 1, a supporting silicon wafer layer 2 and a sensitive film layer 3 which are sequentially arranged from bottom to top; wherein, the upper and lower surfaces of the sensitive film layer 3 are respectively provided with a layer of metal film as an upper electrode and a lower electrode, and the overlapping area of the upper electrode and the lower electrode forms an effective sensitive unit; the sensitive film layer 3 is made of flexible pyroelectric polymer.
The flexible substrate layer 1, the supporting silicon wafer layer 2 and the sensitive film layer 3 of the embodiment can be flexibly deformed, so that the deformation and the visible range of the flexible substrate layer can be adjusted as required, the sensitive film layer 3 is composed of flexible pyroelectric polymers, the sensitive film layer 3 has a very wide spectral response range and a very wide detection spectral range, the imaging quality and the imaging effect of the infrared detector can be improved, and the imaging details are richer.
The flexible pyroelectric polymer in this embodiment is one or more of PVDF (polyvinylidene fluoride), PVDF-HFP (polyvinylidene fluoride-hexafluoropropylene), PVDF-TrFE (polyvinylidene fluoride-trifluoroethylene), odd nylon, PVC (polyvinyl chloride) or PPP (polypropylene).
In this embodiment, the flexible pyroelectric polymer is doped with one or more of inorganic piezoelectric ceramics, inorganic piezoelectric crystals, metal oxides, carbon nanotubes, and graphene. Inorganic piezoelectric ceramics such as lead zirconate titanate and barium titanate, inorganic piezoelectric crystals such as quartz and lithium tantalate, metal oxides such as titanium oxide and zinc oxide, carbon nanotubes and graphene can be added into the flexible pyroelectric polymer to further improve the performance of the material, increase the sensitivity and strength of the material and avoid damage caused by deformation.
The sensitive film layer 3 of this embodiment is formed by casting, hot pressing, suspension coating or electrostatic spraying. The sensitive film layer 3 can ensure uniform thickness of the whole film layer and can control the thickness, and the prepared film can meet the imaging requirement.
The flexible substrate layer 1, the supporting silicon wafer layer 2 and the sensitive film layer 3 of the present embodiment are all connected by a glue joint method. The array is convenient to install, debug and maintain by a gluing mode, and the use of the array is not influenced.
The metal film of this embodiment is an aluminum film.
Meanwhile, the embodiment also provides a manufacturing method of the wide-spectrum flexible infrared detector array, which comprises the following steps:
1) fully dissolving the flexible pyroelectric polymer to form a solution, coating the solution on a polishing substrate, baking at high temperature until the solvent is completely volatilized to form a sensitive film, and stripping the sensitive film to form a sensitive film layer 4;
2) depositing metal films with the same thickness on the upper surface and the lower surface of the sensitive film layer by adopting a magnetron sputtering mode to form an upper electrode and a lower electrode, wherein the overlapped area of the upper electrode and the lower electrode forms an effective sensitive unit;
3) the sensitive film layer is provided with a through hole which leads the lower electrode to the upper surface of the sensitive film layer, and the through hole is filled with metal and is patterned; the purpose of manufacturing the through hole is to facilitate the subsequent leading-out of an electric signal to a reading circuit;
4) selecting a thin silicon wafer with the same area and shape as the sensitive film layer, and preparing a strip-shaped through hole on the thin silicon wafer; the thin silicon wafer plays a supporting role in the sensitive thin film layer;
5) gluing the sensitive film layer on the thin silicon chip by taking the effective sensitive unit and the center of the strip-shaped through hole as the standard; the sensitive film is aligned and attached to the thin silicon wafer with the strip-shaped through holes, and the centers of the pixels in each row are aligned to the centers of the strip-shaped through holes during attachment.
6) Corroding the thin silicon wafer in an anisotropic corrosion mode to form a separated supporting column structure to form a supporting silicon wafer layer 2;
7) and (3) gluing the support silicon wafer layer on the flexible substrate layer 1 to finish the manufacture.
The invention is described in detail below with reference to specific embodiments and with reference to specific structures, data, and steps for a complete understanding of the invention.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
As shown in fig. 1, a wide-spectrum flexible infrared detector array comprises a flexible substrate layer, a supporting silicon wafer layer and a sensitive film layer which are sequentially bonded from bottom to top; the upper surface and the lower surface of the sensitive film layer are respectively provided with a layer of metal aluminum film as an upper electrode and a layer of metal aluminum film as a lower electrode, and the overlapped area of the upper electrode and the lower electrode forms an effective sensitive unit; the sensitive film layer is made of flexible pyroelectric polymers; the flexible pyroelectric polymer is polyvinylidene fluoride-hexafluoropropylene;
the specific manufacturing method of the wide-spectrum flexible infrared detector array of the embodiment is as follows:
1. mixing PVDF (polyvinylidene fluoride) and PHFP (polyhexafluoropropylene) powder in a mass ratio of 85: 15; dissolving the mixture in a Dimethylformamide (DMF) solution, wherein the mass ratio of the solute to the solvent is 10: 90; after the solution is fully dissolved, coating the solution on a polished glass substrate, and then baking at 110 ℃; peeling the film from the glass substrate after the solvent is completely volatilized to form a polyvinylidene fluoride-hexafluoropropylene copolymer (PVDF-HFP) sensitive film as shown in figure 2;
2. depositing metal aluminum with the thickness of 50nm by adopting a magnetron sputtering process to serve as an upper electrode and a lower electrode layer of the sensitive film, patterning the upper electrode and the lower electrode by adopting a photoetching or etching process, wherein the overlapped area of the upper electrode and the lower electrode is an effective pixel, and the area of the overlapped area is 200 micrometers multiplied by 200 micrometers, and the result is shown in figures 3 and 4;
3. forming a through hole on the surface of the sensitive film by adopting photoetching and oxygen plasma etching processes, depositing metal aluminum with the thickness of 500nm by utilizing a magnetron sputtering process to fill the through hole and patterning, and leading the lower electrode out to the upper surface, wherein the result is shown in figure 5;
4. thinning the silicon wafer with the same area as the sensitive film to 100 mu m by adopting a thinning process to form a thin silicon wafer; then, using 500nm thermal silicon oxide as a masking layer, and adopting a silicon isotropic etching process to form strip-shaped through holes, wherein the result is shown in fig. 6;
5. aligning and attaching the thin silicon wafer and the sensitive film by using epoxy resin glue, and aligning the center of each row of pixels with the center of the strip-shaped through hole during attaching, wherein the result is shown in fig. 7;
6. using 500nm thermal silicon oxide as a masking layer, using KOH (potassium hydroxide) as an etching solution, and further etching the thin silicon wafer into separated support pillar structures by an anisotropic etching process to form a support silicon wafer layer, with the result as shown in fig. 8;
7. and (3) bonding the supporting silicon chip layer to a polymethyl methacrylate (PMMA) flexible substrate with the thickness of 500 mu m by using epoxy resin glue, and finishing the process, wherein the processed array effect is shown in figure 1.
The above description is an embodiment of the present invention. The foregoing is a preferred embodiment of the present invention, and the preferred embodiments in the preferred embodiments can be combined and used in any combination if not obviously contradictory or prerequisite to a certain preferred embodiment, and the specific parameters in the embodiments and examples are only for the purpose of clearly illustrating the invention verification process of the inventor and are not intended to limit the patent protection scope of the present invention, which is subject to the claims and the equivalent structural changes made by the content of the description and the drawings of the present invention are also included in the protection scope of the present invention.
Claims (1)
1. A method for manufacturing a wide-spectrum flexible infrared detector array is characterized by comprising the following steps:
1) fully dissolving the flexible pyroelectric polymer to form a solution, coating the solution on a polishing substrate, baking at high temperature until the solvent is completely volatilized to form a sensitive film, and stripping the sensitive film to form a sensitive film layer;
2) depositing metal films with the same thickness on the upper surface and the lower surface of the sensitive film layer by adopting a magnetron sputtering mode to form an upper electrode and a lower electrode, wherein the overlapped area of the upper electrode and the lower electrode forms an effective sensitive unit;
3) the sensitive film layer is provided with a through hole which leads the lower electrode to the upper surface of the sensitive film layer, and the through hole is filled with metal and is patterned;
4) selecting a thin silicon wafer with the same area and shape as the sensitive film layer, and preparing a strip-shaped through hole on the thin silicon wafer;
5) gluing the sensitive film layer on the thin silicon chip by taking the effective sensitive unit and the center of the strip-shaped through hole as the standard;
6) corroding the thin silicon wafer in an anisotropic corrosion mode to form a separated supporting column structure to form a supporting silicon wafer layer;
7) and (5) gluing the support silicon wafer layer on the flexible substrate layer to complete the manufacturing.
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| CN107479760B (en) | 2017-09-22 | 2021-09-24 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof, display panel and display system |
| CN108871592B (en) * | 2018-05-08 | 2020-07-03 | 电子科技大学 | Flexible pyroelectric thermal infrared imager pixel array with low voltage and temperature interference |
| CN108645520B (en) * | 2018-05-08 | 2020-08-21 | 电子科技大学 | Flexible pyroelectric infrared detector sensitive unit with low-voltage electric interference |
| CN109921679B (en) * | 2019-03-08 | 2020-03-10 | 吉林大学 | Bionic flexible actuator with real-time feedback function and preparation method thereof |
| CN113432729A (en) * | 2021-06-21 | 2021-09-24 | 华南理工大学 | Flexible pyroelectric detector and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202534698U (en) * | 2012-03-19 | 2012-11-14 | 中国科学院上海技术物理研究所 | Ferroelectric tunnel junction room temperature infrared detector |
| CN103630242A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202534698U (en) * | 2012-03-19 | 2012-11-14 | 中国科学院上海技术物理研究所 | Ferroelectric tunnel junction room temperature infrared detector |
| CN103630242A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
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