CN106783893A - Display base plate and preparation method thereof, display device - Google Patents
Display base plate and preparation method thereof, display device Download PDFInfo
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- CN106783893A CN106783893A CN201710085926.9A CN201710085926A CN106783893A CN 106783893 A CN106783893 A CN 106783893A CN 201710085926 A CN201710085926 A CN 201710085926A CN 106783893 A CN106783893 A CN 106783893A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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Abstract
The invention provides a kind of display base plate and preparation method thereof, display device, belong to display technology field.Display base plate, including pixel electrode and public electrode on underlay substrate；The pixel electrode includes spaced multiple pixel electrodes；The public electrode includes the Part I and Part II of different height, the Part I is with the distance between plane where the pixel electrode more than the Part II and the distance between plane where the pixel electrode, there is overlapping region in orthographic projection of orthographic projection of the Part I on the underlay substrate with the pixel electrode on the underlay substrate, orthographic projection of the gap between orthographic projection and adjacent sub-pixel electrodes of the Part II on the underlay substrate on the underlay substrate has overlapping region.The present invention while storage capacitance of display device is reduced, can reduce the driving voltage of display device.
Description
Technical field
The present invention relates to display technology field, a kind of display base plate and preparation method thereof, display device are particularly related to.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor-Liquid Crystal Display, TFT-
LCD) there is small volume, it is low in energy consumption, the features such as radiationless, developed rapidly in recent years, in current flat panel display market
In occupy leading position.The agent structure of TFT-LCD is liquid crystal panel, and liquid crystal panel includes the thin film transistor (TFT) array base to box
Plate and color membrane substrates, liquid crystal molecule are filled between array base palte and color membrane substrates.Liquid crystal panel by control public electrode and
Pixel electrode drives the electric field of liquid crystal molecule deflection to be formed, and realizes that GTG shows, the filter layer on color membrane substrates is used to realize
Colour display.
At present, TFT-LCD can be divided into according to display pattern：Twisted-nematic (TN, Twisted Nematic) type, plane
Conversion (IPS, In Plane Switching) type and senior super dimension field switch (ADS, Advanced Super Dimension
Switch) type.Wherein, ADS types TFT-LCD is mainly by the electric field produced by gap electrode edge in same plane and narrow
Seam electrode layer forms multi-dimensional electric field with the electric field that plate electrode interlayer is produced, and makes in liquid crystal cell between gap electrode, directly over electrode
All aligned liquid-crystal molecules can produce rotation, so as to improve liquid crystal operating efficiency and increase light transmission efficiency.ADS technologies
The picture quality of TFT-LCD products can be improved, with high-resolution, high transmittance, low-power consumption, wide viewing angle, high aperture, low
The advantages of aberration, ripple without water of compaction (push Mura).
The public electrode and pixel electrode of ADS types TFT-LCD are both formed on array base palte, pixel electrode and public electrode
Overlapping region constitute storage capacitance, because the overlapping area of pixel electrode and public electrode is than larger, cause display device
Storage capacitance is excessive so that TFT is relatively difficult when charging.Between the size and pixel electrode and public electrode of storage capacitance away from
From being inversely proportional, by increasing the distance between pixel electrode and public electrode, it is possible to achieve reduce the purpose of storage capacitance, but
If the increase of the distance between pixel electrode and public electrode, driving voltage higher is needed again come maintain pixel electrode with it is public
The intensity of electric field between electrode, i.e., need to improve the driving voltage of display device while storage capacitance is reduced.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of display base plate and preparation method thereof, display device, Neng Gou
While reducing the storage capacitance of display device, the driving voltage of display device is reduced.
In order to solve the above technical problems, embodiments of the invention offer technical scheme is as follows：
On the one hand, there is provided a kind of display base plate, pixel electrode and public electrode including on underlay substrate；
The pixel electrode includes spaced multiple pixel electrodes；
The public electrode includes the Part I and Part II of different height, the Part I and pixel electricity
The distance between plane where pole is more than the Part II and the distance between plane, described first where the pixel electrode
Partly orthographic projection of the orthographic projection on the underlay substrate with the pixel electrode on the underlay substrate exists and overlaps
Region, the gap between orthographic projection and adjacent sub-pixel electrodes of the Part II on the underlay substrate is in the substrate
There is overlapping region in the orthographic projection on substrate.
Further, the display base plate also includes being located at the public electrode away from the pixel electrode side, interval
The multiple of setting is raised, and the part that the public electrode is located in the projection is the Part II, the public electrode position
Part between adjacent protrusion is the Part I.
Further, orthographic projection of the pixel electrode on the underlay substrate falls into the Part I described
In orthographic projection on underlay substrate, orthographic projection of the Part II on the underlay substrate fall into adjacent sub-pixel electrodes it
Between gap in orthographic projection on the underlay substrate.
Further, the gap between adjacent sub-pixel electrodes is the first gap, and the gap between adjacent protrusion is second
Gap, the pixel electrode is corresponded with second gap, it is described it is raised correspond with first gap, it is described
The width of pixel electrode is equal to the width of the raised width and second gap with the width sum in first gap
Degree sum, and the pixel electrode at the center on the width of bearing of trend with corresponding second gap in width
It is centrally located on direction on same straight line, it is described raised at the center on the width of bearing of trend and corresponding the
One gap is centrally located on same straight line in the direction of the width.
Further, the width of the pixel electrode is 2~5um, and the width in first gap is 4~10um；
The raised width is 2~10um, and the width in second gap is 2~10um, described raised highly small
In 1um.
The embodiment of the present invention additionally provides a kind of display device, including display base plate as described above.
The embodiment of the present invention additionally provides a kind of preparation method of display base plate, including：
Being formed on underlay substrate includes the public electrode of the Part I of different height and Part II；
The pixel electrode insulated with the public electrode is formed, the pixel electrode includes spaced multiple sub-pixels
Electrode；
Wherein, the Part I is more than the Part II and institute with the distance between plane where the pixel electrode
State the distance between plane, orthographic projection of the Part I on the underlay substrate and the sub-pixel where pixel electrode
There is overlapping region, orthographic projection of the Part II on the underlay substrate in orthographic projection of the electrode on the underlay substrate
There is overlapping region in the orthographic projection of gap between adjacent sub-pixel electrodes on the underlay substrate.
Further, the formation includes that the Part I of different height and the public electrode of Part II include：
One underlay substrate is provided；
A layer insulating is formed on the underlay substrate, the insulating barrier is patterned to form multiple spaced
It is raised；
The first transparency conducting layer is deposited being formed with the underlay substrate of the projection, first transparency conducting layer is located at
Part in the projection forms the Part II of the public electrode, and first transparency conducting layer is located between adjacent protrusion
Part form the Part I of the public electrode.
Further, the pixel electrode that the formation is insulated with the public electrode includes：
Gate insulation layer and passivation layer are sequentially depositing on the underlay substrate of the public electrode being formed with；
The second transparency conducting layer is deposited on the passivation layer, second transparency conducting layer is patterned to form described
Pixel electrode, the pixel electrode includes multiple spaced pixel electrodes.
Further, the insulating barrier is to use negative photoresist, the mask plate being patterned to the insulating barrier with it is right
It is identical that second transparency conducting layer is patterned used mask plate.
Embodiments of the invention have the advantages that：
In such scheme, public electrode includes the Part I and Part II of different height, Part I and pixel electricity
, more than Part II and the distance between plane where pixel electrode, Part I is in substrate base for the distance between plane where pole
There is overlapping region in the orthographic projection on plate, Part II is on underlay substrate with orthographic projection of the pixel electrode on underlay substrate
Orthographic projection and adjacent sub-pixel electrodes between orthographic projection of the gap on underlay substrate there is overlapping region, such common electrical
Pole and pixel electrode just to part exist with the distance between pixel electrode than larger region, display device can be reduced
Storage capacitance, meanwhile, between public electrode and pixel electrode gap just to part exist with the distance between pixel electrode compared with
Small region, can increase the intensity of electric field between public electrode and pixel electrode, and playing reduces display device driving voltage
Purpose.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment of the present invention display device；
Fig. 2 is the pass between embodiment of the present invention height of projection and display device driving voltage and display device transmitance
It is schematic diagram；
Fig. 3 is between another embodiment of the present invention height of projection and display device driving voltage and display device transmitance
Relation schematic diagram；
Fig. 4 forms the schematic diagram after projection for the embodiment of the present invention；
Fig. 5 is the schematic diagram after the embodiment of the present invention forms public electrode；
Fig. 6 is the schematic diagram after the embodiment of the present invention forms gate insulation layer and passivation layer；
Fig. 7 is the schematic diagram after the embodiment of the present invention forms pixel electrode；
Fig. 8 makes the schematic diagram after passivation layer planarization for the embodiment of the present invention.
Reference
Relation curve between S11 heights of projection and display device transmitance
Relation curve between S12 heights of projection and display device driving voltage
Relation curve between S13 heights of projection and display device driving voltage
Relation curve between S14 heights of projection and display device transmitance
The raised passivation layer of 3 public electrode, 4 gate insulation layer 5 of 1 underlay substrate 2
The opposite substrate of 6 pixel electrode 7
Specific embodiment
For the technical problem, technical scheme and the advantage that to be solved embodiments of the invention are clearer, below in conjunction with
Drawings and the specific embodiments are described in detail.
Unless otherwise defined, the technical term or scientific terminology that the disclosure is used should be tool in art of the present invention
The ordinary meaning that the personage for having general technical ability is understood." first ", " second " that is used in the disclosure and similar word are simultaneously
Any order, quantity or importance are not indicated that, and is used only to distinguish different parts." including " or "comprising" etc.
Similar word means that the element or object that occur before the word cover the element or object for appearing in the word presented hereinafter
And its it is equivalent, and it is not excluded for other elements or object.The similar word such as " connection " or " connected " is not limited to physics
Or machinery connection, and can be including electrical connection, either directly still indirectly." on ", D score,
"left", "right" etc. is only used for representing relative position relation that after the absolute position for being described object changes, then the relative position is closed
System is likely to correspondingly change.
It is appreciated that ought such as layer, film, region or substrate etc element be referred to as being located at another element " on " or D score
When, the element can with it is " direct " be located at another element " on " or D score, or there may be intermediary element.
Embodiments of the invention provide a kind of display base plate and preparation method thereof, display device, can reduce display dress
While the storage capacitance put, the driving voltage of display device is reduced.
Embodiment one
The present embodiment provides a kind of display base plate, including pixel electrode and public electrode on underlay substrate；
The pixel electrode includes spaced multiple pixel electrodes；
The public electrode includes the Part I and Part II of different height, the Part I and pixel electricity
The distance between plane where pole is more than the Part II and the distance between plane, described first where the pixel electrode
Partly orthographic projection of the orthographic projection on the underlay substrate with the pixel electrode on the underlay substrate exists and overlaps
Region, the gap between orthographic projection and adjacent sub-pixel electrodes of the Part II on the underlay substrate is in the substrate
There is overlapping region in the orthographic projection on substrate.
In the present embodiment, public electrode includes the Part I and Part II of different height, Part I and pixel electricity
, more than Part II and the distance between plane where pixel electrode, Part I is in substrate base for the distance between plane where pole
There is overlapping region in the orthographic projection on plate, Part II is on underlay substrate with orthographic projection of the pixel electrode on underlay substrate
Orthographic projection and adjacent sub-pixel electrodes between orthographic projection of the gap on underlay substrate there is overlapping region, such common electrical
Pole and pixel electrode just to part exist with the distance between pixel electrode than larger region, display device can be reduced
Storage capacitance, meanwhile, between public electrode and pixel electrode gap just to part exist with the distance between pixel electrode compared with
Small region, can increase the intensity of electric field between public electrode and pixel electrode, and playing reduces display device driving voltage
Purpose.
Specifically, as shown in figure 1, the display base plate of the present embodiment includes the He of public electrode 3 being formed on underlay substrate 1
Pixel electrode 6, display base plate also includes being formed in spaced multiple raised 2 on underlay substrate 1, and raised 2 positioned at public
Away from the side of pixel electrode 6, public electrode 3 is formed on raised 2 electrode 3, wherein, public electrode 3 is located at the portion on raised 2
Divide and be above-mentioned Part II, the part that public electrode 3 is located between adjacent protrusion 2 is above-mentioned Part I, it can be seen that
The part that public electrode 3 is located on raised 2 is in small distance with the place plane of pixel electrode 6, and public electrode 3 is located at adjacent protrusion
Part between 2 is in larger distance with the place plane of pixel electrode 6.
Specifically, as shown in figure 1, pixel electrode 6 includes spaced multiple pixel electrodes, on public electrode 3
Gate insulation layer 4 and passivation layer 5 are formed with, the surface of passivation layer 5 is a flat surfaces, and multiple pixel electrodes are evenly distributed on this and put down
On smooth surface.In the present embodiment, orthographic projection of the pixel electrode on underlay substrate 1 is with Part I on underlay substrate 1
Orthographic projection needs the presence of overlapping region, so ensure that public electrode and pixel electrode just to part exist and pixel electrode
The distance between than larger region such that it is able to reduce the storage capacitance of display device；Gap is in lining between pixel electrode
Orthographic projection on substrate 1 needs the presence of overlapping region with orthographic projection of the Part II on underlay substrate 1, so ensure that
Between public electrode and pixel electrode gap just to part exist with the less region of the distance between pixel electrode, so as to
The intensity of electric field, plays the purpose for reducing display device driving voltage enough between increase public electrode and pixel electrode.
Preferably, as shown in figure 1, orthographic projection of the pixel electrode on underlay substrate 1 falls into Part I in substrate base
In orthographic projection on plate 1, the gap between orthographic projection of the Part II on underlay substrate 1 falls into adjacent sub-pixel electrodes is serving as a contrast
In orthographic projection on substrate 1, so ensure that public electrode 3 and pixel electrode 6 just to part and pixel electrode 6 between
Distance than larger, can at utmost reduce the storage capacitance of display device, meanwhile, between public electrode 3 and pixel electrode 6
Gap just to part it is smaller with the distance between pixel electrode 6, can at utmost increase public electrode 3 and pixel electrode 6
Between electric field intensity, significantly reduce the driving voltage of display device.
As shown in figure 1, multiple pixel electrodes and raised 2 are evenly distributed on underlay substrate 1, adjacent sub-pixel electrodes it
Between gap be the first gap, the width in the first gap is S1, and the width of pixel electrode is W1, between adjacent protrusion 2 between
Gap is the second gap, and the width in the second gap is S2, and raised 2 width is W2, and pixel electrode and the second gap correspond,
The gap of projection 2 and first corresponds, the width that the width W1 of pixel electrode and the sum of width S 1 in the first gap are equal to raised 2
Degree W2 and the second gap the sum of width S 1, and pixel electrode the center on the width of bearing of trend with it is right
The second gap is answered to be centrally located in the direction of the width on same straight line, raised 2 on the width of bearing of trend
Center be centrally located in the direction of the width on same straight line with corresponding first gap, i.e., between adjacent sub-pixel electrodes
One gap is symmetrical arranged with raised 2, and the second gap between adjacent protrusion 2 is symmetrical arranged with pixel electrode, can so protect
The uniformity of electric field between card public electrode 3 and pixel electrode 6, improves the transmitance of display device.
By substantial amounts of experimental verification, the width W1 of pixel electrode is designed as 2~5um in the present embodiment, between first
The width S 1 of gap is designed as 4~10um；Correspondingly, raised 2 width W2 is designed as 2~10um, the width S 2 in the second gap
2~10um is designed as, when using above-mentioned parameter, can be many by the comparing of the driving voltage of display device reduction, and to display
The comparing of the storage capacitance reduction of device is more.In addition, raised 2 height can produce influence to the transmitance of display device, in order to
The influence to display device transmitance is reduced, raised 2 height is designed as less than 1um.
In one specific embodiment, the width W1 of pixel electrode is 2.5um, and the width S 1 in the first gap is 5.5um, raised
2 width W2 is 2um, and the width S 2 in the second gap is 6um, and raised 2 height is less than 0.9um, now height of projection and display
Relation schematic diagram between device driving voltage and display device transmitance as shown in Fig. 2 wherein, S11 be height of projection with
Relation curve between display device transmitance, S12 is the relation curve between height of projection and display device driving voltage, can
To find out, by the design of the present embodiment, in the case where the transmitance on display device is substantially without influence, can substantially reduce
The driving voltage of display device.
In another specific embodiment, the width W1 of pixel electrode is 2.5um, and the width S 1 in the first gap is 5.5um, convex
The width W2 for playing 2 is 4um, and the width S 2 in the second gap is 4um, and raised 2 height is less than 1um, now height of projection and display
Relation schematic diagram between device driving voltage and display device transmitance is as shown in figure 3, S13 is height of projection and display dress
The relation curve between driving voltage is put, S14 is the relation curve between height of projection and display device transmitance, can be seen
Go out, with the lifting of raised 2 height, the driving voltage of display device is gradually reduced, and the transmitance of display device is declined slightly, lead to
The design of the present embodiment is crossed, in the case where the transmitance on display device is substantially without influence, display device can be substantially reduced
Driving voltage.
Certainly, W1, S1, W2, S2 are not limited to above-mentioned value in the present embodiment, are set by the width W1 of pixel electrode
2~5um is calculated as, the width S 1 in the first gap is designed as 4~10um, raised 2 width W2 is designed as 2~10um, between second
The width S 2 of gap is designed as 2~10um, and when causing that W1 is equal to W2 with S2 sums with S1 sums, can significantly reduce display dress
The driving voltage put, while the transmitance influence on display device is smaller.
Embodiment two
Present embodiments provide a kind of display device, including display base plate as described above.The display device can be：
Any product or part with display function such as LCD TV, liquid crystal display, DPF, mobile phone, panel computer, its
In, the display device also includes flexible PCB, printed circuit board (PCB) and backboard.
Embodiment three
The present embodiment additionally provides a kind of preparation method of display base plate, including：
Being formed on underlay substrate includes the public electrode of the Part I of different height and Part II；
The pixel electrode insulated with the public electrode is formed, the pixel electrode includes spaced multiple sub-pixels
Electrode；
Wherein, the Part I is more than the Part II and institute with the distance between plane where the pixel electrode
State the distance between plane, orthographic projection of the Part I on the underlay substrate and the sub-pixel where pixel electrode
There is overlapping region, orthographic projection of the Part II on the underlay substrate in orthographic projection of the electrode on the underlay substrate
There is overlapping region in the orthographic projection of gap between adjacent sub-pixel electrodes on the underlay substrate.
In such scheme, the public electrode of formation includes the Part I and Part II of different height, Part I with
More than Part II and the distance between plane where pixel electrode, Part I exists the distance between plane where pixel electrode
There is overlapping region in the orthographic projection on underlay substrate, Part II is in substrate with orthographic projection of the pixel electrode on underlay substrate
There is overlapping region in the orthographic projection of the gap between orthographic projection and adjacent sub-pixel electrodes on substrate on underlay substrate, so
Public electrode and pixel electrode just to part exist with the distance between pixel electrode than larger region, display can be reduced
The storage capacitance of device, meanwhile, between public electrode and pixel electrode gap just to part exist and pixel electrode between
Region in small distance, can increase the intensity of electric field between public electrode and pixel electrode, play reduction display device and drive
The purpose of voltage.
Further, the formation includes that the Part I of different height and the public electrode of Part II include：
One underlay substrate is provided；
A layer insulating is formed on the underlay substrate, the insulating barrier is patterned to form multiple spaced
It is raised；
The first transparency conducting layer is deposited being formed with the underlay substrate of the projection, first transparency conducting layer is located at
Part in the projection forms the Part II of the public electrode, and first transparency conducting layer is located between adjacent protrusion
Part form the Part I of the public electrode.
Further, the pixel electrode that the formation is insulated with the public electrode includes：
Gate insulation layer and passivation layer are sequentially depositing on the underlay substrate of the public electrode being formed with；
The second transparency conducting layer is deposited on the passivation layer, second transparency conducting layer is patterned to form described
Pixel electrode, the pixel electrode includes multiple spaced pixel electrodes.
In one specific embodiment, the preparation method of display base plate of the invention is comprised the following steps：
Step 1, as shown in Figure 4 a, there is provided underlay substrate 2, forms multiple spaced raised 2 on underlay substrate 2；
In one specific embodiment, one layer of insulating materials is formed on underlay substrate 1, one layer is being coated on the insulating material just
Property photoresist, positive photoresist is exposed using mask plate, make positive photoresist formed the non-reservation region of photoresist and light
Photoresist reservation region, wherein, photoresist reservation region corresponds to raised 2 figure region, the non-reservation region pair of photoresist
Should be in the region beyond above-mentioned figure；Development treatment is carried out, the photoresist of the non-reservation region of photoresist is completely removed, photoresist
The photoresist thickness of reservation region keeps constant；Etch away the insulation material of the non-reservation region of photoresist completely by etching technics
Material, peels off remaining photoresist, forms raised 2 figure.
Preferably, in another specific embodiment, insulating barrier is to be formed using negative photoresist, using saturating subsequently to second
Bright conductive layer is patterned and to form the mask plate that pixel electrode used negative photoresist is exposed, and forms raised after development
2.Because insulating barrier is made of negative photoresist, so when forming raised 2, it is patterned using to the second transparency conducting layer
The mask plate for being used forms raised 2 by development is directly exposed to insulating barrier, without remaking special mask again
Plate, and the step of etching and stripping photoresist in the patterning processes using positive photoresist can be saved.
Use negative photoresist in insulating barrier, and the mask plate being patterned to insulating barrier with to the second transparency conducting layer
Be patterned used mask plate it is identical when, by controlling the time of exposure, can cause that raised 2 width W2 is less than or waits
In the width S 1 in the first gap, the time to negative photoresist exposure is more long, and raised 2 width W2 is smaller.Due to making raised 2
Identical mask plate is used with pixel electrode is made, additionally it is possible to so that the gap between adjacent sub-pixel electrodes symmetrically sets with projection
Put, the gap between adjacent protrusion is symmetrical arranged with pixel electrode, ensure that the electricity between public electrode and pixel electrode
Field uniformity, improves the transmitance of display device.
Step 2, as shown in figure 5, on the underlay substrate 1 by step 1 formed public electrode 3；
Specifically, one layer of first transparency conducting layer is being deposited as public electrode 3, first by the underlay substrate 1 of step 1
Transparency conducting layer can be ITO, IZO or other transparent metal oxides, and the first transparency conducting layer is located at the portion on raised 2
Divide the Part II for forming public electrode 3, the part that the first transparency conducting layer is located between adjacent protrusion 2 forms public electrode 3
Part I.
Step 3, as shown in fig. 6, sequentially forming gate insulation layer 4 and passivation layer 5 on the underlay substrate 1 by step 2；
Specifically, the substrate base of step 2 can be completed in using plasma enhancing chemical vapor deposition (PECVD) method
Gate insulation layer 4 is deposited on plate 1, gate insulation layer can select oxide, nitride or oxynitrides.
Specifically, can be deposited on gate insulation layer in using plasma enhancing chemical vapor deposition (PECVD) method blunt
Change layer 5, passivation layer can select oxide, nitride or oxynitrides.Specifically, passivation material can be SiNx,
SiOx or Si (ON) x, passivation layer can also use Al2O3.Passivation layer can be single layer structure, or using silicon nitride and
The double-layer structure that silica is constituted.
Step 4, as shown in fig. 7, on the underlay substrate 1 by step 3 formed pixel electrode 6；
Specifically, the method by sputtering or thermal evaporation on the underlay substrate 1 for completing step 3 deposits the second electrically conducting transparent
Layer, the second transparency conducting layer can be ITO, IZO or other transparent metal oxides, be coated on the second transparency conducting layer
One layer of photoresist, is exposed using mask plate to photoresist, photoresist is formed the non-reservation region of photoresist and photoresist guarantor
Region is stayed, wherein, photoresist reservation region corresponds to the figure region of pixel electrode, and the non-reservation region of photoresist corresponds to
Region beyond above-mentioned figure；Development treatment is carried out, the photoresist of the non-reservation region of photoresist is completely removed, photoresist retains
The photoresist thickness in region keeps constant；Etch away the second electrically conducting transparent of the non-reservation region of photoresist completely by etching technics
Layer, peels off remaining photoresist, forms the figure of pixel electrode 6.
Step 5, as shown in figure 8, Etch Passivation 5 so that passivation layer 5 is planarized, you can obtain the display of the present embodiment
Substrate.
Specifically, the display base plate that the present embodiment makes is array base palte, as shown in figure 1, by opposite substrate 7 and showing base
Plate is carried out to box, and dispenser method, you can formed display panel, then assemble flexible PCB, printed circuit board (PCB) and backboard etc. its
Its part, you can form display device of the invention.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, on the premise of principle of the present invention is not departed from, some improvements and modifications can also be made, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of display base plate, it is characterised in that including pixel electrode and public electrode on underlay substrate；
The pixel electrode includes spaced multiple pixel electrodes；
The public electrode includes the Part I and Part II of different height, the Part I and the pixel electrode institute
Distance between plane is more than the distance between the Part II and plane where the pixel electrode, the Part I
There is overlapping region in the orthographic projection of orthographic projection on the underlay substrate with the pixel electrode on the underlay substrate,
Gap between orthographic projection and adjacent sub-pixel electrodes of the Part II on the underlay substrate is in the underlay substrate
On orthographic projection there is overlapping region.
2. display base plate according to claim 1, it is characterised in that the display base plate also includes being located at the common electrical
Away from the pixel electrode side, spaced multiple projections, the part that the public electrode is located in the projection is for pole
The Part II, the part that the public electrode is located between adjacent protrusion is the Part I.
3. display base plate according to claim 2, it is characterised in that the pixel electrode is on the underlay substrate
Orthographic projection falls into the Part I in the orthographic projection on the underlay substrate, and the Part II is on the underlay substrate
The gap that falls between adjacent sub-pixel electrodes of orthographic projection in orthographic projection on the underlay substrate.
4. display base plate according to claim 3, it is characterised in that gap between adjacent sub-pixel electrodes is between first
Gap, the gap between adjacent protrusion is the second gap, and the pixel electrode is corresponded with second gap, the projection
Corresponded with first gap, the width of the pixel electrode is equal to described convex with the width sum in first gap
The width sum in width and second gap risen, and the pixel electrode is on the width of bearing of trend
Center be centrally located in the direction of the width on same straight line with corresponding second gap, it is described projection perpendicular to bearing of trend
Width on center be centrally located in the direction of the width on same straight line with corresponding first gap.
5. display base plate according to claim 4, it is characterised in that
The width of the pixel electrode is 2~5um, and the width in first gap is 4~10um；
The raised width is 2~10um, and the width in second gap is 2~10um, and the raised height is less than
1um。
6. a kind of display device, it is characterised in that including the display base plate as any one of claim 1-5.
7. a kind of preparation method of display base plate, it is characterised in that including：
Being formed on underlay substrate includes the public electrode of the Part I of different height and Part II；
The pixel electrode insulated with the public electrode is formed, the pixel electrode includes spaced multiple sub-pixel electricity
Pole；
Wherein, the Part I is more than the Part II and the picture with the distance between plane where the pixel electrode
The distance between plane, orthographic projection of the Part I on the underlay substrate and the pixel electrode where plain electrode
There is overlapping region, orthographic projection of the Part II on the underlay substrate and phase in the orthographic projection on the underlay substrate
There is overlapping region in the orthographic projection of gap between adjacent pixel electrode on the underlay substrate.
8. the preparation method of display base plate according to claim 7, it is characterised in that the formation includes different height
The public electrode of Part I and Part II includes：
One underlay substrate is provided；
A layer insulating is formed on the underlay substrate, the insulating barrier is patterned to form multiple spaced convex
Rise；
The first transparency conducting layer is deposited on the underlay substrate of the projection being formed with, first transparency conducting layer is located at described
Part in projection forms the Part II of the public electrode, and first transparency conducting layer is located at the portion between adjacent protrusion
Divide the Part I for forming the public electrode.
9. the preparation method of display base plate according to claim 8, it is characterised in that the formation and the public electrode
The pixel electrode of insulation includes：
Gate insulation layer and passivation layer are sequentially depositing on the underlay substrate of the public electrode being formed with；
The second transparency conducting layer is deposited on the passivation layer, second transparency conducting layer is patterned to form the pixel
Electrode, the pixel electrode includes multiple spaced pixel electrodes.
10. the preparation method of display base plate according to claim 9, it is characterised in that the insulating barrier is to use negativity
Photoresist, the mask plate being patterned to the insulating barrier is patterned used mask with to second transparency conducting layer
Plate is identical.
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| CN201710085926.9A CN106783893A (en) | 2017-02-17 | 2017-02-17 | Display base plate and preparation method thereof, display device |
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