CN106783783A - Power-type paster semiconductor element - Google Patents
Power-type paster semiconductor element Download PDFInfo
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- CN106783783A CN106783783A CN201710019146.4A CN201710019146A CN106783783A CN 106783783 A CN106783783 A CN 106783783A CN 201710019146 A CN201710019146 A CN 201710019146A CN 106783783 A CN106783783 A CN 106783783A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of power-type paster semiconductor element, it is related to technical field of electronic components.The semiconductor element includes combined chip, and the upper surface of the combined chip is welded with Top electrode piece, and lower surface is welded with bottom electrode piece；Container-like fire retardant insulating shell is provided with the outside of the combined chip, filled with encapsulation filler between the shell and the combined chip, the free end of the Top electrode piece and bottom electrode piece is extended to outside the shell, and pin is connected as two of the semiconductor element.The semiconductor element can encapsulate with conventional inserts formula semiconductor element identical semiconductor chip, on power and other Electrical Indexes with plug-in element keep identical level；Electrode slice loads shell after being welded with semiconductor chip, and fills to encapsulate filler, and the encapsulation filler filled has flame-retarding characteristic, and shell used is also fire-retardant material, and semiconductor chip is entirely wrapped up by fire proofing, can effectively prevent naked light.
Description
Technical field
The present invention relates to technical field of electronic components, more particularly to a kind of power-type paster semiconductor element.
Background technology
The semiconductor protective elements for mainly using currently on the market include the transient state suppression of silicon materials or carbofrax material chip
Diode TVS processed, avalanche silicon diode ABD, crystalline substance lock body killer tube TSS or the piezo-resistance for metal oxide materials chip
MOV。
Above-mentioned Transient Suppression Diode TVS, avalanche silicon diode ABD, crystalline substance lock body killer tube TSS be typically all SOD-123,
DO-214AA, DO-214AB, DO-214AC etc. encapsulate form, and the electric current that it can bear is from several amperes to hundreds of amperes, energy
The power for bearing is from 200W to highest 6.5kW.And the direct insertion element of tradition, the electric current that it can bear is up to several kiloamperes, work(
Rate is up to 30kW.
The SMD piezo-resistance of metal oxide materials chip currently on the market, mainly include multilayer ceramic structure and
Plastic package structure, the MOV of multilayer ceramic structure influence limited by the structure and processing technology, it is impossible to accomplish very high
Discharge capacity, general only hundreds of amperes.The MOV of plastic package type, on the market present maximum have and accomplish 4032 encapsulation
, its discharge capacity 1200A.And traditional plug-in type piezo-resistance, its discharge capacity can reach 70kA even more highs.
As above as can be seen that labeling type semiconductor component currently on the market, its tolerance power and electric current often all compare
It is small, far below traditional plug-in type semiconductor element, and in the products such as automotive electronics, high power power, several kilowatts
The discharge capacity of power and hundreds of peaces much can not meet actually used demand, and many products are all still partly led using plug-in type
Volume elements part.
The content of the invention
The technical problems to be solved by the invention are how to provide one kind to encapsulate and conventional inserts formula semiconductor element phase
With semiconductor chip, and on power and other Electrical Indexes with plug-in element holding phase same level power-type paster partly lead
Volume elements part.
In order to solve the above technical problems, the technical solution used in the present invention is：A kind of power-type paster semiconductor element,
It is characterized in that：Including combined chip, the upper surface of the combined chip is welded with Top electrode piece, and lower surface is welded with bottom electrode
Piece；Container-like fire retardant insulating shell is provided with the outside of the combined chip, is filled between the shell and the combined chip
The free end of encapsulation filler, the Top electrode piece and bottom electrode piece is extended to outside the shell, used as the semiconductor element
Two connection pins.
Further technical scheme is：The single-chip that the combined chip is stacked together including more than one.
Further technical scheme is：The combined chip is that a voltage dependent resistor chip or two upper and lower are stacked to
Transient Suppression Diode chip together.
Further technical scheme is：The upper and lower surface of the Transient Suppression Diode chip is provided with conductive layer, transient state
Suppress between diode chip for backlight unit and Transient Suppression Diode chip and Top electrode piece and bottom electrode piece and Transient Suppression Diode
Welded by solder sheet between chip；Pass through solder sheet between Top electrode piece and bottom electrode piece and the voltage dependent resistor chip
Welded.
Further technical scheme is：The Top electrode piece includes first level welding piece and the first connection sheet, described
First level welding piece is welded in the upper surface of the combined chip, and first connection sheet is hung down with the first level welding piece
Directly, first connection sheet is used to connect pin as one of the semiconductor element；The bottom electrode piece includes the second water
Downhand welding contact pin and the second connection sheet, the second horizontal welding piece are welded in the lower surface of the combined chip, and described second connects
Contact pin is vertical with the described second horizontal welding piece, and second connection sheet is used for as another connection of the semiconductor element
Pin.
Further technical scheme is：The Top electrode piece includes first level welding piece and the first connection sheet, described
First level welding piece is welded in the upper surface of the combined chip, and first connection sheet includes the first vertical connecting portion and the
One level connection joint portion, the upper end of the first vertical connecting portion is fixedly connected with the first level welding piece, and described first erects
The lower end of direct-connected socket part is located at outside the shell, is fixedly connected with the first level connecting portion, the first level connecting portion
For a connection pin as the semiconductor element；The bottom electrode piece includes the second horizontal welding piece and the second connection
Piece, the second horizontal welding piece is welded in the lower surface of the combined chip, and second connection sheet connects vertically including second
Socket part and the second level connection joint portion, the upper end of the second vertical connecting portion are fixedly connected with the described second horizontal welding piece, institute
The lower end for stating the second vertical connecting portion is located at outside the shell, is fixedly connected with the second level connection joint portion, second water
Flushconnection portion is used for as another connection pin of the semiconductor element.
Further technical scheme is：The first level welding piece and the second horizontal welding piece are provided with several and lead to
Hole.
Further technical scheme is：On the front and back sides of first connection sheet and the second connection sheet and the second water
Downhand welding contact pin is provided with groove with the junction of the second connection sheet.
Further technical scheme is：The shell uses the plastics of fire retardant insulating, ceramics or the gold crossed of insulation processing
Category material makes.
Further technical scheme is：The making material of the encapsulation filler is epoxy resin, the silicon rubber of fire retardant insulating
Glue, quartz sand and/or talcum powder.
It is using the beneficial effect produced by above-mentioned technical proposal：The semiconductor element can be encapsulated and conventional inserts formula
Semiconductor element identical semiconductor chip, identical level is kept on power and other Electrical Indexes with plug-in element；Electricity
Pole piece loads shell after being welded with semiconductor chip, and fills to encapsulate filler, and the encapsulation filler filled has fire-retardant spy
Property, shell used is also fire-retardant material, and semiconductor chip is entirely wrapped up by fire proofing, can effectively prevent naked light.Electrode slice
The one end for stretching out shell forms the SMD pin for being applicable to surface mount process after bending.Additionally, the combined chip
In can be arranged as required to one or more single-chip, expand the use scope of the semiconductor element.Upper electricity
The reliability that welding is increased by setting through hole on pole piece；The front and back sides of upper and lower electrode slice are provided with groove, convenient folding
It is curved.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Fig. 1 is the dimensional structure diagram of semiconductor element described in the embodiment of the present invention；
Fig. 2 is the cross section structure diagram of semiconductor element described in the embodiment of the present invention one；
Fig. 3 is the cross section structure diagram of semiconductor element described in the embodiment of the present invention two；
Fig. 4 is the cross section structure diagram of semiconductor element described in the embodiment of the present invention three；
Fig. 5 is the cross section structure diagram of semiconductor element described in the embodiment of the present invention four；
Fig. 6 is the structural representation of Top electrode piece described in the embodiment of the present invention one and three；
Fig. 7 is the structural representation of bottom electrode piece described in the embodiment of the present invention one and three；
Wherein：1st, Top electrode piece 11, first level welding piece 12, the first connection sheet 121, the first vertical connecting portion 122, the first water
Flushconnection portion 2, bottom electrode piece 21, the second horizontal welding piece 22, the second connection sheet 221, the second vertical connecting portion 222, the second water
Flushconnection portion 3, fire retardant insulating shell 4, encapsulation filler 5, voltage dependent resistor chip 6, Transient Suppression Diode chip 7, groove 8, weldering
Tablet 9, through hole.
Specific embodiment
With reference to the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground description, it is clear that described embodiment is only a piece of point of embodiment of the invention, rather than the embodiment of full sheet.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Many details are elaborated in the following description in order to fully understand the present invention, but the present invention can be with
Other manner described here is different from using other to implement, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by following public specific embodiment.
Overall, as shown in figure 1, the embodiment of the invention discloses a kind of power-type paster semiconductor element, including combination
Chip（Not shown in Fig. 1）, the single-chip that the combined chip is stacked together including more than one.The combined chip it is upper
Surface soldered has Top electrode piece 1, and lower surface is welded with bottom electrode piece 2；It is provided with container-like fire-retardant exhausted on the outside of the combined chip
Edge shell 3, filled with encapsulation filler 4 between the shell and the combined chip, the Top electrode piece 1 and bottom electrode piece 2
Free end is extended to outside the shell, and pin is connected as two of the semiconductor element.
The semiconductor element can encapsulate with conventional inserts formula semiconductor element identical semiconductor chip, power and its
On its Electrical Indexes identical level is kept with plug-in element；Electrode slice loads shell after being welded with semiconductor chip, and fills out
Encapsulation filler is filled with, the encapsulation filler filled has flame-retarding characteristic, shell used is also fire-retardant material, and semiconductor chip is whole
Wrapped up by fire proofing, can effectively prevent naked light.One end that electrode slice stretches out shell forms after bending and is applicable to surface
The SMD pin of attachment process.
Specifically, the present invention is illustrated by following embodiment to the semiconductor element.
Embodiment one
As shown in Fig. 2 the embodiment of the invention discloses a kind of power-type paster semiconductor element, including a voltage dependent resistor chip
5, Top electrode piece 1 is welded on the upper surface of the voltage dependent resistor chip 5 by solder sheet 8, and bottom electrode piece 2 is welded by solder sheet 8
It is connected on the lower surface of the voltage dependent resistor chip 5；The outside of the voltage dependent resistor chip 5 is provided with container-like fire retardant insulating shell 3,
Filled with encapsulation filler 4 between the shell and the voltage dependent resistor chip 5, the freedom of the Top electrode piece 1 and bottom electrode piece 2
End is extended to outside the shell, and pin is connected as two of the semiconductor element.
As shown in Figure 2,6, the Top electrode piece 1 includes the connection sheet 12 of first level welding piece 11 and first.Described first
Horizontal welding piece 11 is welded in the upper surface of the combined chip, first connection sheet 12 and the first level welding piece 11
Vertically, first connection sheet 12 is used to connect pin as one of the semiconductor element；As shown in Fig. 2,7, it is described under
Electrode slice 2 includes the second horizontal welding piece 21 and the second connection sheet 22, and the second horizontal welding piece 21 is welded in the combination
The lower surface of chip, second connection sheet 22 is vertical with the described second horizontal welding piece 21, and second connection sheet 22 is used for
As another connection pin of the semiconductor element.
In the present embodiment, it is preferred that the upper and lower surface of voltage dependent resistor chip 5 is coated with silver electrode layer, voltage dependent resistor chip
Big through-flow circular chip varistor used by 5 selection conventional inserts formula piezo-resistances, can reach larger power discharge capacity.
In the present embodiment, it is preferred that the horizontal welding piece 12 of the first level welding piece 11 and second is provided with some
Individual through hole 9, shape of through holes is designed as circle, and quantitative design is 7.On Top electrode piece welding is increased by setting through hole
Reliability.The front and back sides of the Top electrode piece 1 and bottom electrode piece are provided with groove 7, facilitate bending.
In the present embodiment, described shell be the plastics of fire retardant insulating, ceramics or the metal material crossed of insulation processing, such as
PBT, PA66, aluminium oxide ceramics, aluminium nitride etc.；Described encapsulating compound is the epoxy resin of fire retardant insulating, silicon rubber, quartz sand,
The materials such as talcum powder or its mixture.
Embodiment two
It is that Top electrode piece 1 is different from the concrete form of bottom electrode piece 2, embodiment that the present embodiment is different from the part of embodiment one
One is straight cutting pin element, and embodiment two is paster pin element.Specifically, as shown in figure 3, the Top electrode piece 1 includes the
One horizontal welding piece 11 and the first connection sheet 12, the first level welding piece 11 are welded in the upper surface of the combined chip,
First connection sheet 12 includes the first vertical connecting portion 121 and first level connecting portion 122, the first vertical connecting portion
121 upper end is fixedly connected with the first level welding piece 11, and the lower end of the first vertical connecting portion 121 is located at outside described
Outside shell, it is fixedly connected with the first level connecting portion 122, the first level connecting portion 122 is used for as the semiconductor
One connection pin of element；As shown in figure 3, the bottom electrode piece 2 includes the second horizontal welding piece 21 and the second connection sheet 22,
The second horizontal welding piece 21 is welded in the lower surface of the combined chip, and second connection sheet 22 connects vertically including second
The level connection joint portion 222 of socket part 221 and second, upper end and the described second horizontal welding piece 21 of the second vertical connecting portion 221
It is fixedly connected, the lower end of the second vertical connecting portion 221 is located at outside the shell, solid with the second level connection joint portion 222
Fixed connection, the second level connection joint portion 222 is used for as another connection pin of the semiconductor element.
Embodiment three
As shown in figure 4, the embodiment of the invention discloses a kind of power-type paster semiconductor element, including combined chip, described group
Closing chip includes two upper and lower Transient Suppression Diode chips 6 being stacked together.The Transient Suppression Diode chip 6
Upper and lower surface is provided with conductive nickel layer, between Transient Suppression Diode chip 6 and Transient Suppression Diode chip 6 and Top electrode
Welded by solder sheet 8 between piece 1 and bottom electrode piece 2 and Transient Suppression Diode chip 6.The outside of the combined chip
Container-like fire retardant insulating shell 3 is provided with, filled with encapsulation filler 4, the Top electrode between the shell and the combined chip
The free end of piece 1 and bottom electrode piece 2 is extended to outside the shell, and pin is connected as two of the semiconductor element.
As shown in Fig. 4,6, the Top electrode piece 1 includes the connection sheet 12 of first level welding piece 11 and first.Described first
Horizontal welding piece 11 is welded in the upper surface of the combined chip, first connection sheet 12 and the first level welding piece 11
Vertically, first connection sheet 12 is used to connect pin as one of the semiconductor element；As shown in Fig. 4,7, it is described under
Electrode slice 2 includes the second horizontal welding piece 21 and the second connection sheet 22, and the second horizontal welding piece 21 is welded in the combination
The lower surface of chip, second connection sheet 22 is vertical with the described second horizontal welding piece 21, and second connection sheet 22 is used for
As another connection pin of the semiconductor element.
In the present embodiment, it is preferable that two Transient Suppression Diode chips 6 select power-type large scale TVS chips, its electricity
Property parameter can be with identical, it is also possible to it is different.
In the present embodiment, it is preferred that the horizontal welding piece 12 of the first level welding piece 11 and second is provided with some
Individual through hole 9, shape of through holes is designed as circle, and quantitative design is 7.On Top electrode piece welding is increased by setting through hole
Reliability.The front and back sides of the Top electrode piece 1 and bottom electrode piece are provided with groove 7, facilitate bending.
In the present embodiment, described shell be the plastics of fire retardant insulating, ceramics or the metal material crossed of insulation processing, such as
PBT, PA66, aluminium oxide ceramics, aluminium nitride etc.；Described encapsulating compound is the epoxy resin of fire retardant insulating, silicon rubber, quartz sand,
The materials such as talcum powder or its mixture.
Example IV
It is that Top electrode piece 1 is different from the concrete form of bottom electrode piece 2, embodiment that the present embodiment is different from the part of embodiment three
Three is straight cutting pin element, and example IV is paster pin element.Specifically, as shown in figure 5, the Top electrode piece 1 includes the
One horizontal welding piece 11 and the first connection sheet 12, the first level welding piece 11 are welded in the upper surface of the combined chip,
First connection sheet 12 includes the first vertical connecting portion 121 and first level connecting portion 122, the first vertical connecting portion
121 upper end is fixedly connected with the first level welding piece 11, and the lower end of the first vertical connecting portion 121 is located at outside described
Outside shell, it is fixedly connected with the first level connecting portion 122, the first level connecting portion 122 is used for as the semiconductor
One connection pin of element；As shown in figure 5, the bottom electrode piece 2 includes the second horizontal welding piece 21 and the second connection sheet 22,
The second horizontal welding piece 21 is welded in the lower surface of the combined chip, and second connection sheet 22 connects vertically including second
The level connection joint portion 222 of socket part 221 and second, upper end and the described second horizontal welding piece 21 of the second vertical connecting portion 221
It is fixedly connected, the lower end of the second vertical connecting portion 221 is located at outside the shell, solid with the second level connection joint portion 222
Fixed connection, the second level connection joint portion 222 is used for as another connection pin of the semiconductor element.
Claims (10)
1. a kind of power-type paster semiconductor element, it is characterised in that：Including combined chip, the upper surface of the combined chip is welded
It is connected to Top electrode piece（1）, lower surface is welded with bottom electrode piece（2）；Container-like fire retardant insulating is provided with the outside of the combined chip
Shell（3）, filled with encapsulation filler between the shell and the combined chip（4）, the Top electrode piece（1）With bottom electrode piece
（2）Free end extend to outside the shell, connect pins as two of the semiconductor element.
2. power-type paster semiconductor element as claimed in claim 1, it is characterised in that：The combined chip include one with
On the single-chip that is stacked together.
3. power-type paster semiconductor element as claimed in claim 1, it is characterised in that：The combined chip is one pressure-sensitive
Resistance chip（5）Or two upper and lower Transient Suppression Diode chips being stacked together（6）.
4. power-type paster semiconductor element as claimed in claim 3, it is characterised in that：The Transient Suppression Diode chip
（6）Upper and lower surface be provided with conductive layer, Transient Suppression Diode chip（6）With Transient Suppression Diode chip（6）Between and
Top electrode piece（1）With bottom electrode piece（2）With Transient Suppression Diode chip（6）Between pass through solder sheet（8）Welded；Upper electricity
Pole piece（1）With bottom electrode piece（2）With the voltage dependent resistor chip（5）Between pass through solder sheet（8）Welded.
5. power-type paster semiconductor element as claimed in claim 1, it is characterised in that：The Top electrode piece（1）Including
One horizontal welding piece（11）With the first connection sheet（12）, the first level welding piece（11）It is welded in the upper of the combined chip
Surface, first connection sheet（12）With the first level welding piece（11）Vertically, first connection sheet（12）For making
One for the semiconductor element connects pin；The bottom electrode piece（2）Including the second horizontal welding piece（21）Connect with second
Contact pin（22）, the second horizontal welding piece（21）It is welded in the lower surface of the combined chip, second connection sheet（22）
With the described second horizontal welding piece（21）Vertically, second connection sheet（22）For as the semiconductor element another
Connection pin.
6. power-type paster semiconductor element as claimed in claim 1, it is characterised in that：The Top electrode piece（1）Including
One horizontal welding piece（11）With the first connection sheet（12）, the first level welding piece（11）It is welded in the upper of the combined chip
Surface, first connection sheet（12）Including the first vertical connecting portion（121）With first level connecting portion（122）, described first
Vertical connecting portion（121）Upper end and the first level welding piece（11）It is fixedly connected, the first vertical connecting portion（121）
Lower end be located at the shell outside, with the first level connecting portion（122）It is fixedly connected, the first level connecting portion
（122）For a connection pin as the semiconductor element；The bottom electrode piece（2）Including the second horizontal welding piece
（21）With the second connection sheet（22）, the second horizontal welding piece（21）It is welded in the lower surface of the combined chip, described
Two connection sheets（22）Including the second vertical connecting portion（221）With the second level connection joint portion（222）, the second vertical connecting portion
（221）Upper end and the described second horizontal welding piece（21）It is fixedly connected, the second vertical connecting portion（221）Lower end be located at
Outside the shell, with the second level connection joint portion（222）It is fixedly connected, the second level connection joint portion（222）For conduct
Another connection pin of the semiconductor element.
7. the power-type paster semiconductor element as described in claim 5 or 6, it is characterised in that：The first level welding piece
（11）With the second horizontal welding piece（12）It is provided with several through holes（9）.
8. the power-type paster semiconductor element as described in claim 5 or 6, it is characterised in that：First connection sheet（12）
With the second connection sheet（22）Front and back sides on and the second horizontal welding piece（21）With the second connection sheet（22）Junction set
It is fluted（7）.
9. power-type paster semiconductor element as claimed in claim 1, it is characterised in that：The shell uses fire retardant insulating
The metal material that plastics, ceramics or insulation processing are crossed makes.
10. power-type paster semiconductor element as claimed in claim 1, it is characterised in that：The encapsulation filler（4）Making
Material is epoxy resin, silicon rubber, quartz sand and/or the talcum powder of fire retardant insulating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710019146.4A CN106783783A (en) | 2017-01-12 | 2017-01-12 | Power-type paster semiconductor element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710019146.4A CN106783783A (en) | 2017-01-12 | 2017-01-12 | Power-type paster semiconductor element |
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| CN106783783A true CN106783783A (en) | 2017-05-31 |
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ID=58949115
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| CN108320875A (en) * | 2018-03-21 | 2018-07-24 | 东莞市有辰电子有限公司 | A kind of patch varistors and preparation method thereof |
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