CN106783778B - Plastic package material via hole and filling method thereof - Google Patents

Plastic package material via hole and filling method thereof Download PDF

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Publication number
CN106783778B
CN106783778B CN201710030404.9A CN201710030404A CN106783778B CN 106783778 B CN106783778 B CN 106783778B CN 201710030404 A CN201710030404 A CN 201710030404A CN 106783778 B CN106783778 B CN 106783778B
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layer
metal
forming
thickness
opening
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CN106783778A (en
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何志宏
林正忠
仇月东
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SJ Semiconductor Jiangyin Corp
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Shenghejing Micro Semiconductor Jiangyin Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
    • H01L2224/22—Structure, shape, material or disposition of high density interconnect preforms of a plurality of HDI interconnects
    • H01L2224/2201—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
    • H01L2224/22—Structure, shape, material or disposition of high density interconnect preforms of a plurality of HDI interconnects
    • H01L2224/221—Disposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
    • H01L2224/22—Structure, shape, material or disposition of high density interconnect preforms of a plurality of HDI interconnects
    • H01L2224/225—Material

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The invention provides a plastic package material via hole and a filling method thereof, wherein the filling method comprises the following steps of S1: providing a metal pad structure, and forming a plastic packaging material layer on the upper surface of the metal pad structure; s2: forming an opening on the plastic packaging material layer corresponding to the position of the metal bonding pad, and forming a blocking layer on the inner surface of the opening, wherein the plastic packaging material layer with a preset thickness is reserved above the metal bonding pad as a protective layer; s3: removing the blocking layer and the protective layer at the bottom of the opening to expose the metal bonding pad; s4: and forming a seed layer on the surface of the barrier layer and the upper surface of the metal bonding pad, and sequentially forming a metal layer and a polymer layer on the surface of the seed layer. The plastic package material via hole and the filling method thereof solve the problem that the method for effectively filling the plastic package material via hole in the prior art is not available.

Description

Plastic package material via hole and filling method thereof
Technical Field
The present invention relates to semiconductor packaging technology, and more particularly, to a via hole made of plastic packaging material and a filling method thereof.
Background
Packaging technology is well known as a technology of packaging chips, which is necessary for the chips, because the chips must be isolated from the outside to prevent degradation of electrical performance due to corrosion of the chip circuitry by impurities in the air; on the other hand, the packaged chip is convenient to install and transport. It is critical because the quality of the packaging technology also directly affects the performance of the chip itself and the design and manufacture of the PCB (printed circuit board) to which it is connected. The package can also be said to be a housing for mounting a semiconductor integrated circuit chip, which not only serves to mount, secure, seal, protect the chip and enhance thermal conductivity, but also serves as a bridge to communicate the world inside the chip with external circuitry. In short, the package is to connect the contacts on the chip to the pins of the package housing through wires, which in turn establish connections with other devices through wires on the printed circuit board. Packaging technology is therefore a very critical ring in the integrated circuit industry.
Currently, with many years of development, packaging technology has undergone a process from the initial stitch-on mounting technology to surface mounting technology to ball grid array terminal BGA (ball grid array) type packaging technology to the latest three-dimensional packaging technology (3D package). The three-dimensional packaging technology can be divided into three types of packaging stacked three-dimensional packaging, chip stacked three-dimensional packaging and wafer stacked three-dimensional packaging. The three-dimensional package has the advantages of improving the density of interconnection lines and reducing the overall height of the appearance of the device. The three-dimensional packaging technology has good application prospect because of the possibility of stacking different types of chips together and higher interconnection line density. In a 3D structure, electronic components, such as semiconductor chips with various active IC devices, may be multi-layered stacked structures. Traditionally, wire bonds are used to establish electrical interconnections between chips, but wire bonds require larger in-plane and out-of-plane dimensions, not consistent with the goal of maximizing element density. In order to electrically connect components in different layers, via technology may be used to provide electrical interconnection and provide mechanical support, and there is no effective way to fill the vias of the molding compound.
In view of the above, it is necessary to design a new plastic via and a filling method thereof to solve the above-mentioned problems.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a via hole of a molding material and a filling method thereof, which are used for solving the problem that the via hole of the molding material is not filled effectively in the prior art.
To achieve the above and other related objects, the present invention provides a method for filling a via hole of a molding compound, the method comprising:
s1: providing a metal pad structure, and forming a plastic packaging material layer on the upper surface of the metal pad structure;
s2: forming an opening on the plastic packaging material layer corresponding to the position of the metal bonding pad, and forming a blocking layer on the inner surface of the opening, wherein the plastic packaging material layer with a preset thickness is reserved above the metal bonding pad as a protective layer;
s3: removing the blocking layer and the protective layer at the bottom of the opening to expose the metal bonding pad;
s4: and forming a seed layer on the surface of the barrier layer and the upper surface of the metal bonding pad, and sequentially forming a metal layer and a polymer layer on the surface of the seed layer.
Preferably, the thickness of the plastic packaging material layer in S1 is less than or equal to 200um.
Preferably, in the step S2, an opening is formed on the plastic package material layer by adopting a laser drilling process, and the energy of the laser drilling is 0.5-3J/cm < 2 >.
Preferably, the thickness of the plastic package material layer in S1 is greater than 200um.
Preferably, the forming method of the opening in S2 includes:
s21: forming a groove on the plastic packaging material layer corresponding to the metal bonding pad, and forming a barrier layer on the inner surface of the groove;
s22: and removing the blocking layer at the bottom of the groove, and repeating S21 at least once at the bottom of the groove to form an opening.
Preferably, the grooves are formed by adopting a laser drilling process, and the energy of the laser drilling is 0.5-3J/cm < 2 >.
Preferably, the thickness of the barrier layer in S2 is 100 nm-3 um.
Preferably, the barrier layer in S2 includes one or more of a nitride, an oxide, or a mixed layer of a nitride and an oxide of a group iii-v element.
Preferably, the thickness of the protective layer in S2 is 1-10 um.
Preferably, in the step S3, a laser drilling or dry etching process is adopted to remove the blocking layer and the protective layer at the bottom of the opening, wherein the energy of the laser drilling is 0.2-1J/cm < 2 >.
Preferably, the metal pad structure includes:
a carrier plate;
a rewiring layer formed on the upper surface of the carrier plate; and
at least one metal pad formed on the redistribution layer.
The invention also provides a plastic package material via hole, which comprises:
a metal pad structure;
the plastic packaging material layer is positioned on the upper surface of the metal pad structure and is provided with a via hole at the position corresponding to the metal pad;
a barrier layer on the inner sidewall surface of the via;
the seed layer is positioned on the surface of the barrier layer and the upper surface of the metal bonding pad;
the metal layer is positioned on the surface of the seed layer; and
and the polymer layer is positioned on the surface of the metal layer and fills the via hole.
Preferably, the thickness of the barrier layer is 100 nm-3 um.
Preferably, the barrier layer comprises one or more of a nitride, an oxide, or a mixed layer of a nitride and an oxide of a group III-V element.
Preferably, the metal pad structure includes:
a carrier plate;
the rewiring layer is positioned on the upper surface of the carrier plate; and
at least one metal pad located on the redistribution layer.
As described above, the plastic package material via hole and the filling method thereof have the following beneficial effects:
1. the filling method can effectively realize the manufacture and filling of the plastic package material via hole, and has simple manufacture process and steps.
2. According to the filling method, through the design of the barrier layer, the pressure of the polymer layer on the metal layer is reduced, and the problem that the metal layer is broken and discontinuous due to the pressure caused by thermal expansion of the polymer and cannot realize electric interconnection is avoided; and the side wall of the plastic package material via hole becomes smoother through the design of the blocking layer, so that the problem that the side wall of the via hole is too rough due to laser drilling is effectively avoided.
3. The plastic package material via hole has a simple structure and good electrical interconnection effect.
Drawings
Fig. 1 to fig. 4 are schematic flow diagrams of a method for filling vias of a molding compound according to an embodiment of the invention.
Fig. 5 to 9 are schematic flow diagrams illustrating a method for filling vias of a molding compound according to a second embodiment of the invention.
Description of element reference numerals
1. Metal bonding pad structure
11. Carrier plate
12. Rewiring layer
13. Metal bonding pad
2. Plastic packaging material layer
3. An opening
4. Protective layer
5. Barrier layer
6. Seed layer
7. Metal layer
8. Polymer layer
9. Groove
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 to 9. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
Example 1
The embodiment provides a filling method of a plastic package material via hole, which comprises the following steps:
s1: providing a metal pad structure 1, and forming a plastic packaging material layer 2 on the upper surface of the metal pad structure 1;
s2: forming an opening 3 on the plastic packaging material layer 2 corresponding to the position of the metal bonding pad 13, and forming a barrier layer 5 on the inner surface of the opening 3, wherein the plastic packaging material layer with a preset thickness is reserved above the metal bonding pad 13 as a protective layer 4;
s3: removing the barrier layer 5 and the protective layer 4 at the bottom of the opening 3 to expose the metal pad 13;
s4: a seed layer 6 is formed on the surface of the barrier layer 5 and the upper surface of the metal pad 13, and a metal layer 7 and a polymer layer 8 are sequentially formed on the surface of the seed layer 6.
The method for filling the via hole of the molding compound according to the present embodiment will be described in detail with reference to fig. 1 to 4.
As shown in fig. 1 and 2, a metal pad structure 1 is provided, and a molding material layer 2 is formed on an upper surface of the metal pad structure 1.
As an example, the metal pad structure 1 includes
A carrier plate 11;
a rewiring layer 12 formed on the upper surface of the carrier plate 11; and
at least one metal pad 13 formed on the rewiring layer 12.
Specifically, the carrier 11 is one of glass, a transparent semiconductor material, or a transparent polymer.
Specifically, the redistribution layer 12 is fabricated by using a physical vapor deposition method, a chemical vapor deposition method, an evaporation process, a sputtering process, an electroplating process or an electroless plating process, wherein the redistribution layer 12 is a single layer or multiple layers, and the material of the redistribution layer includes one or more of aluminum, copper, tin, nickel, gold and silver.
Specifically, the redistribution layer 12 includes a patterned dielectric layer and a patterned metal wiring layer; wherein the dielectric layer comprises polybenzoxazole, phosphosilicate glass, spin polymer, silicon oxide, siO x C y One or more of silicon carbon composite materials.
Specifically, the metal pad 13 is manufactured by physical vapor deposition, chemical vapor deposition, sputtering, electroplating or electroless plating, and the material thereof includes one or more of aluminum, copper, tin, nickel, gold and silver.
As an example, the thickness of the plastic sealing material layer 2 is 200um or less.
Preferably, in the present embodiment, the thickness of the plastic sealing material layer 2 is 190um; of course, in other embodiments, the thickness of the plastic sealing material layer 2 may be 110um, 150um or other values less than 200um.
Specifically, the plastic sealing material layer 2 is formed by spin coating, compression molding, printing, transfer molding, liquid molding encapsulation, vacuum lamination, or other suitable implementation method, and the material includes one or more of polymer base material, resin base material, polyimide, and epoxy resin.
As shown in fig. 2 and 3, an opening 3 is formed on the molding material layer 2 corresponding to the position of the metal pad 13, and a barrier layer 5 is formed on the inner surface of the opening 3, wherein the molding material layer with a predetermined thickness remains above the metal pad 13 as a protective layer 4.
As an example, an opening 3 is formed on the plastic sealing material layer 2 by using a laser drilling process, wherein the energy of the laser drilling is 0.5-3J/cm 2 。
The energy of the laser drilling is related to the thickness of the molding material layer 2, that is, the greater the thickness of the molding material layer 2, the greater the energy of the laser drilling.
Preferably, in the present embodiment, the energy of the laser drilling is 2J/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the Of course, in other embodiments, the laser drilling energy may also be 0.5J/cm, depending on the thickness of the molding material layer 2 、0.8J/cm 2 、1.1J/cm 2 、1.4J/cm 2 、1.7J/cm 2 、2.3J/cm 2 、2.6J/cm 2 、2.9J/cm 2 、3J/cm 2 Etc.
As an example, the barrier layer5 is 100 nm-3 um, and the material comprises one or more of nitrides, oxides or mixed layers formed by nitrides and oxides of elements of three-five groups; preferably, the material of the barrier layer comprises SiN, siO 2 One or more of the following.
Specifically, the barrier layer 5 is formed by physical vapor deposition, chemical vapor deposition, sputtering, electroplating, or electroless plating.
The thickness of the barrier layer 5 is positively correlated with the thickness of the molding material layer 2, that is, the greater the thickness of the molding material layer 2, the greater the thickness of the barrier layer 5.
Preferably, in this embodiment, the thickness of the barrier layer 5 is 1.5um. Of course, in other embodiments, the thickness of the barrier layer 5 may be adjusted according to the thickness of the molding compound layer 2, that is, the thickness of the barrier layer 5 may be 100nm, 500nm, 1um, 1.25um, 1.75um, 2um, 2.25um, 2.5um, 2.75um, or 3um, etc.
The thickness of the protective layer 4 is, for example, 1 to 10um.
Preferably, in the present embodiment, the thickness of the protective layer 4 is 5um; of course, in other embodiments, the thickness of the protective layer 4 may be 1um, 2um, 3um, 4um, 6um, 7um, 8um, 9um, 10um, or the like.
As shown in fig. 4, the barrier layer 5 and the protective layer 4 at the bottom of the opening 3 are removed to expose the metal pad 13; then, a seed layer 6 is formed on the surface of the barrier layer 5 and the upper surface of the metal pad 13, and a metal layer 7 and a polymer layer 8 are sequentially formed on the surface of the seed layer 6.
As an example, a laser drilling or dry etching process is used to remove the barrier layer 5 and the protective layer 4 at the bottom of the opening 3.
Specifically, a laser drilling process is adopted to remove the barrier layer 5 and the protective layer 4 at the bottom of the opening 3; wherein the energy of the laser drilling is 0.2-1J/cm 2 . Preferably, in the present embodiment, the energy of the laser drilling is 0.6J/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the Of course, in other embodiments, the barrier layer 5 and the protection layer are as describedThe thickness of the sheath layer 4, the energy of the laser drilling can also be 0.2J/cm 2 、0.35J/cm 2 、0.5J/cm 2 、0.65J/cm 2 、0.8J/cm 2 、0.95J/cm 2 、1J/cm 2 Etc.
Specifically, the seed layer 6 is fabricated by physical vapor deposition, chemical vapor deposition, sputtering, electroplating or electroless plating, and the material thereof includes copper or a laminate of copper and titanium.
Specifically, the metal layer 7 is manufactured by physical vapor deposition, chemical vapor deposition, evaporation process, sputtering process, electroplating process or electroless plating process, and the material of the metal layer includes copper.
Specifically, the polymer layer 8 includes one of polyimide, silicone, and epoxy.
Example two
The embodiment provides a filling method of a plastic package material via hole, which comprises the following steps:
s1: providing a metal pad structure 1, and forming a plastic packaging material layer 2 on the upper surface of the metal pad structure 1;
s2: forming an opening 3 on the plastic packaging material layer 2 corresponding to the position of the metal bonding pad 13, and forming a barrier layer 5 on the inner surface of the opening 3, wherein the plastic packaging material layer with a preset thickness is reserved above the metal bonding pad 13 as a protective layer 4;
s3: removing the barrier layer 5 and the protective layer 4 at the bottom of the opening 3 to expose the metal pad 13;
s4: a seed layer 6 is formed on the surface of the barrier layer 5 and the upper surface of the metal pad 13, and a metal layer 7 and a polymer layer 8 are sequentially formed on the surface of the seed layer 6.
The method for filling the via hole of the molding compound according to the present embodiment will be described in detail with reference to fig. 5 to 9.
As shown in fig. 5, a metal pad structure 1 is provided, and a molding material layer 2 is formed on the upper surface of the metal pad structure 1.
As an example, the metal pad structure 1 includes
A carrier plate 11;
a rewiring layer 12 formed on the upper surface of the carrier plate 11; and
at least one metal pad 13 formed on the rewiring layer 12.
Specifically, the carrier 11 is one of glass, a transparent semiconductor material, or a transparent polymer.
Specifically, the redistribution layer 12 is fabricated by using a physical vapor deposition method, a chemical vapor deposition method, an evaporation process, a sputtering process, an electroplating process or an electroless plating process, wherein the redistribution layer 12 is a single layer or multiple layers, and the material of the redistribution layer includes one or more of aluminum, copper, tin, nickel, gold and silver.
Specifically, the redistribution layer 12 includes a patterned dielectric layer and a patterned metal wiring layer; wherein the dielectric layer comprises polybenzoxazole, phosphosilicate glass, spin polymer, silicon oxide, siO x C y One or more of silicon carbon composite materials.
Specifically, the metal pad 13 is manufactured by physical vapor deposition, chemical vapor deposition, sputtering, electroplating or electroless plating, and the material thereof includes one or more of aluminum, copper, tin, nickel, gold and silver.
As an example, the thickness of the plastic sealing material layer 2 is greater than 200um.
Preferably, in the present embodiment, the thickness of the plastic sealing material layer 2 is 400um; of course, in other embodiments, the thickness of the plastic sealing material layer 2 may also be 300um, 500um, or other values greater than 200um.
Specifically, the plastic sealing material layer 2 is formed by spin coating, compression molding, printing, transfer molding, liquid molding encapsulation, vacuum lamination, or other suitable implementation method, and the material includes one or more of polymer base material, resin base material, polyimide, and epoxy resin.
As shown in fig. 6 to 8, an opening 3 is formed on the molding material layer 2 corresponding to the position of the metal pad 13, and a barrier layer 5 is formed on the inner surface of the opening 3, wherein the molding material layer having a predetermined thickness remains above the metal pad 13 as a protective layer 4.
As an example, the method for forming the opening includes:
s21: forming a groove 9 on the plastic packaging material layer 2 corresponding to the position of the metal bonding pad 13, and forming a barrier layer 5 on the inner surface of the groove 9;
s22: the barrier layer 5 at the bottom of the recess 9 is removed and S21 is repeated at least once at the bottom of the recess 9 to form the opening 3.
It should be noted that, the number of repetitions of S21 is related to the thickness of the molding material layer and the depth of each groove, that is, the greater the thickness of the molding material layer, the greater the number of repetitions of S21; when the thickness of the plastic package material layers is the same, the greater the depth of each formed groove is, the fewer the number of repeated S21 is; preferably, in the present embodiment, when the thickness of the plastic sealing material layer is 400um, the S21 is repeated once because the depth of each formed groove is greater than 180 um.
As shown in fig. 6 and 7, a groove 9 is formed on the molding material layer 2 corresponding to the position of the metal pad 13, and a barrier layer 5 is formed on the inner surface of the groove 9.
Specifically, a laser drilling process is adopted to form a groove 9 on the plastic package material layer 2, wherein the energy of the laser drilling is 0.5-3J/cm 2 。
Preferably, in the present embodiment, the depth of the groove 9 is 200um, and the energy of the laser drilling is 2.2J/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the Of course, in other embodiments, the energy of the laser drilling may also be 0.5J/cm, depending on the depth of the recess 9 2 、0.7J/cm 2 、1.0J/cm 2 、1.3J/cm 2 、1.6J/cm 2 、2.1J/cm 2 、2.4J/cm 2 、2.7J/cm 2 、3J/cm 2 Etc.
Specifically, a physical vapor deposition method, a chemical vapor deposition method, an evaporation process, a sputtering process, an electroplating process or an electroless plating process is adopted to form the barrier layer 5; wherein the thickness of the barrier layer 5 is100 nm-3 um, wherein the material comprises one or more of nitrides, oxides or mixed layers formed by nitrides and oxides of elements of three-five groups; preferably, the material of the barrier layer comprises SiN, siO 2 One or more of the following.
The thickness of the barrier layer 5 is positively correlated with the thickness of the molding material layer 2, that is, the greater the thickness of the molding material layer 2, the greater the thickness of the barrier layer 5.
Preferably, in this embodiment, the thickness of the barrier layer 5 is 2um. Of course, in other embodiments, the thickness of the barrier layer 5 may be adjusted according to the thickness of the molding material layer 2, that is, the thickness of the barrier layer 5 may be 1.5um, 1.75um, 2um, 2.25um, 2.5um, 2.75um, 3um, or the like.
As shown in fig. 8, the barrier layer 5 at the bottom of the recess 9 is removed, and S21 is repeated once at the bottom of the recess 9 to form the opening 3.
Specifically, the barrier layer 5 at the bottom of the groove 9 is removed by adopting a laser drilling process, and then the plastic packaging material layer 2 at the bottom of the groove 9 is continuously removed; wherein the energy of the laser drilling is 0.5-3J/cm 2 。
Preferably, in this embodiment, the laser drilling energy in this step is 2.1J/cm 2 。
The thickness of the protective layer 4 is, for example, 1 to 10um.
Preferably, in the present embodiment, the thickness of the protective layer 4 is 6um; of course, in other embodiments, the thickness of the protective layer 4 may be 1um, 2um, 3um, 4um, 5um, 7um, 8um, 9um, 10um, or the like.
As shown in fig. 9, the barrier layer 5 and the protective layer 4 at the bottom of the opening 3 are removed to expose the metal pad 13; then, a seed layer 6 is formed on the surface of the barrier layer 5 and the upper surface of the metal pad 13, and a metal layer 7 and a polymer layer 8 are sequentially formed on the surface of the seed layer 6.
As an example, a laser drilling or dry etching process is used to remove the barrier layer 5 and the protective layer 4 at the bottom of the opening 3.
Specifically, removing the blocking layer and the protective layer at the bottom of the opening by adopting a laser drilling process; wherein the energy of the laser drilling is 0.2-1J/cm 2 . Preferably, in the present embodiment, the energy of the laser drilling is 0.8J/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the Of course, in other embodiments, the laser drilling energy may also be 0.2J/cm, depending on the thickness of the barrier and protective layers 2 、0.3J/cm 2 、0.4J/cm 2 、0.5J/cm 2 、0.6J/cm 2 、0.7J/cm 2 、0.9J/cm 2 Or 1J/cm 2 Etc.
Specifically, the seed layer 6 is fabricated by physical vapor deposition, chemical vapor deposition, sputtering, electroplating or electroless plating, and the material thereof includes copper or a laminate of copper and titanium.
Specifically, the metal layer 7 is manufactured by physical vapor deposition, chemical vapor deposition, evaporation process, sputtering process, electroplating process or electroless plating process, and the material of the metal layer includes copper.
Specifically, the polymer layer 8 includes one of polyimide, silicone, and epoxy.
Example III
As shown in fig. 4 and 9, the present embodiment provides a via of a molding material, where the via of the molding material includes:
a metal pad structure 1;
a plastic package material layer 2 which is positioned on the upper surface of the metal pad structure 1 and is provided with a via hole at a position corresponding to the metal pad 13;
a barrier layer 5 on the inner sidewall surface of the via;
a seed layer 6 positioned on the surface of the barrier layer 5 and the upper surface of the metal pad 13;
a metal layer 7 positioned on the surface of the seed layer 6; and
and a polymer layer 8 positioned on the surface of the metal layer 7 and filling the via hole.
As an example, the metal pad structure 1 includes:
a carrier plate 11;
a rewiring layer 12 located on the upper surface of the carrier plate 11; and
at least one metal pad 13 located on the redistribution layer 12.
Specifically, the carrier 11 is one of glass, a transparent semiconductor material, or a transparent polymer.
Specifically, the redistribution layer 12 is a single layer or multiple layers, and the material includes one or more of aluminum, copper, tin, nickel, gold, and silver.
Specifically, the redistribution layer 12 includes a patterned dielectric layer and a patterned metal wiring layer; wherein the dielectric layer comprises polybenzoxazole, phosphosilicate glass, spin polymer, silicon oxide, siO x C y One or more of silicon carbon composite materials.
Specifically, the metal pad 13 includes one or more of aluminum, copper, tin, nickel, gold, and silver.
As an example, the molding material layer 2 includes one or more of a polymer-based material, a resin-based material, polyimide, and epoxy.
As an example, the thickness of the barrier layer 5 is 100nm to 3um, and the material thereof includes one or more of nitrides, oxides of elements of three to five groups, or mixed layers formed by nitrides and oxides thereof; preferably, the material of the barrier layer comprises SiN, siO 2 One or more of the following.
The thickness of the barrier layer 5 is positively correlated with the thickness of the molding material layer 2, that is, the greater the thickness of the molding material layer 2, the greater the thickness of the barrier layer 5.
The seed layer 6 comprises copper, or a stack of copper and titanium, as examples.
As an example, the metal layer 7 comprises copper.
As an example, the polymer layer 8 includes one of polyimide, silicone, and epoxy.
In summary, the invention provides a plastic package material via hole and a filling method thereof, which have the following beneficial effects:
1. the filling method can effectively realize the manufacture and filling of the plastic package material via hole, and has simple manufacture process and steps.
2. According to the filling method, through the design of the barrier layer, the pressure of the polymer layer on the metal layer is reduced, and the problem that the metal layer is broken and discontinuous due to the pressure caused by thermal expansion of the polymer and cannot realize electric interconnection is avoided; and the side wall of the plastic package material via hole becomes smoother through the design of the blocking layer, so that the problem that the side wall of the via hole is too rough due to laser drilling is effectively avoided.
3. The plastic package material via hole has a simple structure and good electrical interconnection effect.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (7)

1. The filling method of the plastic package material via hole is characterized by comprising the following steps:
s1: providing a metal pad structure, and forming a plastic packaging material layer on the upper surface of the metal pad structure, wherein the thickness of the plastic packaging material layer is larger than 200um;
s2: forming an opening on the plastic packaging material layer corresponding to the position of the metal bonding pad, and forming a blocking layer on the inner surface of the opening, wherein the plastic packaging material layer with a preset thickness is reserved above the metal bonding pad as a protective layer; the method for forming the opening comprises the following steps:
s21: forming a groove on the plastic packaging material layer corresponding to the metal bonding pad, and forming a barrier layer on the inner surface of the groove;
s22: removing the blocking layer at the bottom of the groove, and repeating S21 at least once at the bottom of the groove to form the opening;
s3: removing the blocking layer and the protective layer at the bottom of the opening to expose the metal bonding pad;
s4: and forming a seed layer on the surface of the barrier layer and the upper surface of the metal bonding pad, and sequentially forming a metal layer and a polymer layer on the surface of the seed layer.
2. The method for filling via holes of plastic package material according to claim 1, wherein the grooves are formed by a laser drilling process, and the energy of the laser drilling is 0.5-3J/cm 2 。
3. The method for filling vias of a molding compound of claim 1, wherein the thickness of the barrier layer in S2 is 100nm to 3um.
4. The method of claim 1, wherein the barrier layer in S2 comprises one or more of a nitride, an oxide, or a mixture of a nitride and an oxide of a group iii-v element.
5. The method for filling vias of a molding compound according to claim 1, wherein the thickness of the protective layer in S2 is 1-10 um.
6. The method for filling via holes of plastic package material according to claim 1, wherein the blocking layer and the protective layer at the bottom of the opening are removed by laser drilling or dry etching in S3, wherein the energy of the laser drilling is 0.2-1J/cm 2 。
7. The method of filling vias of a molding compound of claim 1, wherein the metal pad structure comprises:
a carrier plate;
a rewiring layer formed on the upper surface of the carrier plate; and
at least one metal pad formed on the redistribution layer.
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Publication number Priority date Publication date Assignee Title
CN101692437A (en) * 2009-10-15 2010-04-07 复旦大学 Method for selectively depositing diffusion barrier for copper interconnection
CN102832199A (en) * 2012-09-25 2012-12-19 复旦大学 Mixed-media copper-diffusion-resistant blocking layer for copper interconnection and fabrication method of blocking layer
CN103839920A (en) * 2012-11-20 2014-06-04 意法半导体公司 Copper seed layer for an interconnect structure having a doping concentration level gradient
CN206564250U (en) * 2017-01-17 2017-10-17 中芯长电半导体（江阴）有限公司 Capsulation material via

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Publication number Priority date Publication date Assignee Title
KR100390951B1 (en) * 1999-12-29 2003-07-10 주식회사 하이닉스반도체 Method of forming copper wiring in a semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101692437A (en) * 2009-10-15 2010-04-07 复旦大学 Method for selectively depositing diffusion barrier for copper interconnection
CN102832199A (en) * 2012-09-25 2012-12-19 复旦大学 Mixed-media copper-diffusion-resistant blocking layer for copper interconnection and fabrication method of blocking layer
CN103839920A (en) * 2012-11-20 2014-06-04 意法半导体公司 Copper seed layer for an interconnect structure having a doping concentration level gradient
CN206564250U (en) * 2017-01-17 2017-10-17 中芯长电半导体（江阴）有限公司 Capsulation material via

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