CN106783587A - The minimizing technology of semiconductor surface metal impurities - Google Patents
The minimizing technology of semiconductor surface metal impurities Download PDFInfo
- Publication number
- CN106783587A CN106783587A CN201510827442.8A CN201510827442A CN106783587A CN 106783587 A CN106783587 A CN 106783587A CN 201510827442 A CN201510827442 A CN 201510827442A CN 106783587 A CN106783587 A CN 106783587A
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- China
- Prior art keywords
- semiconductor
- metal impurities
- flow
- duration
- argon gas
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 239000012535 impurity Substances 0.000 title claims abstract description 38
- 239000002184 metal Substances 0.000 title claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000007789 gas Substances 0.000 claims abstract description 32
- 229910052786 argon Inorganic materials 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 22
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 22
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 18
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 10
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- -1 polytetrafluoroethylene Polymers 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The cleaning method of semiconductor surface metal impurities of the invention, comprises the following steps：Protect the first surface of semiconductor；With semiconductor described in sulfuric acid or nitric acid dousing；And the impurity on the semiconductor second surface is peeled off using ion beam etching method；The ion beam etching method includes：Argon gas is passed through with first flow, the first duration is kept；The mixed gas of argon gas and oxygen are passed through with second flow, the second duration is kept；Argon gas is passed through with the 3rd flow, the 3rd duration is kept.It efficiently can quickly remove the metal impurities of semiconductor surface, so as to ensure the electric conductivity of semiconductor and reduce scrappage.
Description
Technical field
The present invention relates to method for cleaning semiconductor, more particularly to semiconductor surface metal impurities minimizing technology.
Background technology
In semiconductor fabrication process, the metal impurities (back side can be formed at the back side of chip, chip or silicon circle
Metal, referred to as carries on the back gold).It is abnormal that such metal impurities can cause that the back side of semiconductor occurs, so that after influenceing
Continuous encapsulation, and reduce the reliability of device.Especially, the electric conductivity reduction of semiconductor, causes electrostatic
Electric discharge problem is serious, so as to cause the scrappage of semiconductor product high.
So, a kind of minimizing technology of semiconductor surface metal impurities is needed badly, to overcome the defect of the above.
The content of the invention
It is an object of the invention to provide a kind of cleaning method of semiconductor surface metal impurities, it can be efficient
The metal impurities of quick removal semiconductor surface, so as to ensure the electric conductivity of semiconductor and reduce scrappage.
To achieve the above object, the cleaning method of semiconductor surface metal impurities of the present invention, comprises the following steps：
Protect the first surface of semiconductor；
With semiconductor described in sulfuric acid or nitric acid dousing；And
Impurity on the second surface of the semiconductor is peeled off using ion beam etching method；The ion beam is carved
Etching method includes：
Argon gas is passed through with first flow, the first duration is kept；
The mixed gas of argon gas and oxygen are passed through with second flow, the second duration is kept；
Argon gas is passed through with the 3rd flow, the 3rd duration is kept.
Compared with prior art, the minimizing technology of semiconductor surface metal impurities of the invention is first to semiconductor
Element surface protected, semiconductor back surface metal impurities are then dissolved by sulfuric acid or nitric acid dousing, so
Ion beam etching method stripping metal impurity is used afterwards, can safely, effectively remove semiconductor surface metal miscellaneous
Matter, the performance without damaging semiconductor element, so as to reduce the scrappage of semiconductor.
Used as a preferred embodiment, the etching power in the ion beam etching method is 100~120W,
Etching pressure is 300~320mTorr.
It is preferred that the first flow and the 3rd flow are selected between 15~20sccm, described first
20~30s of Shi Changwei, second duration is more than first duration.
It is preferred that in the mixed gas, the flow-rate ratio of the argon gas and the oxygen is 18:1.
It is preferred that it is described with the 3rd flow be passed through argon gas the step of also including the angle of inclination of ion beam be 30~40
Degree.
It is preferred that it is described argon gas is passed through with the 3rd flow the step of after also include：It is passed through with the 4th flow
Argon gas, keeps the 4th duration, and the angle of inclination of ion beam is 70~80 degree；4th duration is more than described
3rd duration.
As another preferred embodiment, pad pasting on the first surface, the film is polytetrafluoroethylene (PTFE).
It is preferred that after soaking the semiconductor, carry out the ion beam etching method before include：Go
Except the polytetrafluoroethylene (PTFE) on the first surface, the semiconductor is cleaned with absolute ethyl alcohol or acetone.
As another preferred embodiment, also include after the ion beam etching method：With absolute ethyl alcohol or
Acetone cleans the semiconductor.
Specific embodiment
The minimizing technology of semiconductor surface metal impurities of the present invention is made furtherly with reference to embodiment
It is bright, but it is not so limited the present invention.
The minimizing technology of semiconductor surface metal impurities of the invention is applied to chip, chip or silicon circle etc. partly leads
Body product.A preferred embodiment to the minimizing technology of semiconductor surface metal impurities of the present invention is carried out below
Describe in detail.The method includes：
Step one, protects the first surface of semiconductor；
Step 2, with semiconductor described in sulfuric acid or nitric acid dousing；And
Step 3, the impurity on the semiconductor second surface is peeled off using ion beam etching method.
Specifically, to protect the facade element of semiconductor from the corrosion of acid solution, must be pasted in the front of semiconductor
Upper erosion-resisting diaphragm, such as polytetrafluoroethylene (PTFE).In step 2, the semiconductor of coated with protective film is put
Enter immersion in sulfuric acid or salpeter solution, it is preferred that the concentration ratio of sulfuric acid or nitric acid is 2%~3%, soak duration
It it is 2~3 minutes, temperature control is at 80~90 degree.Alternatively, if the metal impurities particle of semiconductor back surface compared with
Greatly, it is greater than using sulfuric acid solution less than 3 μm using salpeter solution, size at 3 μm.
As a preferred embodiment, after the acid soak by step 2, the front of semiconductor is protected
Cuticula is removed, and cleans the semiconductor with absolute ethyl alcohol or acetone, when a length of 20~30 minutes, temperature is 25~30
Degree.
In step 3, ion beam etching (IBE) method is preferably comprised the following steps：
(1) argon gas, is passed through with first flow, the first duration is kept；
(2) mixed gas of argon gas and oxygen, are passed through with second flow, the second duration is kept；
(3) argon gas, is passed through with the 3rd flow, the 3rd duration is kept；
(4) argon gas, is passed through with the 4th flow, the 4th duration is kept.
Specifically, the etching power in the IBE methods is 100~120W, and etching pressure is 300~320mTorr.
Specifically, the first flow for being passed through argon gas is 18~20sccm, a length of 15~20s when first.Then, it is passed through
The mixed gas of argon gas and oxygen, both flow proportionals not 18:1, duration is about 50~60s.Then again
Be passed through argon gas, the 3rd flow is slightly smaller than first flow, when a length of 60~120 seconds, it is preferred that in this step
The angle of inclination of intermediate ion beam is 30~40 degree, to ensure the more preferable stripping of impurity.To ensure preferably removal
Effect, argon gas is passed through in step (4) with the flow of 15~18sccm, a length of 130~150 seconds during holding,
The angle of inclination of ion beam is 70~80 degree.So far, the metal impurities at the back side of semiconductor are removed.
More preferably, if still suffering from minute metallic impurity by light microscopy semiconductor surfaces following, can
Above-mentioned step (three), step (4) is repeated, now duration can suitably be shortened according to actual conditions.
To ensure semiconductor cleaning using ionic liquids, can again be cleaned using absolute ethyl alcohol or acetone after IBE,
Time is about 20 minutes, and temperature is 25~30 degree.
In sum, the minimizing technology of semiconductor surface metal impurities of the invention is first to the element of semiconductor
Surface is protected, and then dissolves semiconductor back surface metal impurities by sulfuric acid or nitric acid dousing, then uses
Ion beam etching method stripping metal impurity, can safely, effectively remove semiconductor surface metal impurities, and
The performance of semiconductor element is not damaged, so as to reduce the scrappage of semiconductor.
Above disclosed is only presently preferred embodiments of the present invention, can not limit the present invention with this certainly
Interest field, therefore equivalent variations made according to scope of the present invention patent still belong to the present invention and are covered
Scope.
Claims (9)
1. a kind of minimizing technology of semiconductor surface metal impurities, comprises the following steps：
Protect the first surface of semiconductor；
With semiconductor described in sulfuric acid or nitric acid dousing；And
Impurity on the second surface of the semiconductor is peeled off using ion beam etching method；It is characterized in that：
The ion beam etching method includes：
Argon gas is passed through with first flow, the first duration is kept；
The mixed gas of argon gas and oxygen are passed through with second flow, the second duration is kept；
Argon gas is passed through with the 3rd flow, the 3rd duration is kept.
2. the minimizing technology of semiconductor surface metal impurities as claimed in claim 1, it is characterised in that：Institute
The etching power in ion beam etching method is stated for 100~120W, etching pressure is 300~320mTorr.
3. the minimizing technology of semiconductor surface metal impurities as claimed in claim 1, it is characterised in that：Institute
State first flow and the 3rd flow selected between 15~20sccm, a length of 20~30s when described first,
Second duration is more than first duration.
4. the minimizing technology of semiconductor surface metal impurities as claimed in claim 1, it is characterised in that：Institute
State in mixed gas, the flow-rate ratio of the argon gas and the oxygen is 18:1.
5. the minimizing technology of semiconductor surface metal impurities as claimed in claim 1, it is characterised in that：Institute
Stating the step of being passed through argon gas with the 3rd flow also includes that the angle of inclination of ion beam is 30~40 degree.
6. the minimizing technology of semiconductor surface metal impurities as claimed in claim 1, it is characterised in that：
It is described the step of be passed through argon gas with the 3rd flow after also include：Argon gas is passed through with the 4th flow, the 4th is kept
Duration, the angle of inclination of ion beam is 70~80 degree；4th duration is more than the 3rd duration.
7. the minimizing technology of semiconductor surface metal impurities as claimed in claim 1, it is characterised in that：
Pad pasting on the first surface, the film is polytetrafluoroethylene (PTFE).
8. the minimizing technology of semiconductor surface metal impurities as claimed in claim 7, it is characterised in that：
After soaking the semiconductor, include before the ion beam etching method：Remove the first surface
On polytetrafluoroethylene (PTFE), clean the semiconductor with absolute ethyl alcohol or acetone.
9. the minimizing technology of semiconductor surface metal impurities as claimed in claim 1, it is characterised in that：
Also include after the ion beam etching method：The semiconductor is cleaned with absolute ethyl alcohol or acetone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510827442.8A CN106783587B (en) | 2015-11-24 | 2015-11-24 | Method for removing metal impurities on surface of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510827442.8A CN106783587B (en) | 2015-11-24 | 2015-11-24 | Method for removing metal impurities on surface of semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106783587A true CN106783587A (en) | 2017-05-31 |
| CN106783587B CN106783587B (en) | 2020-07-17 |
Family
ID=58963962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510827442.8A Active CN106783587B (en) | 2015-11-24 | 2015-11-24 | Method for removing metal impurities on surface of semiconductor |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070264436A1 (en) * | 2006-05-11 | 2007-11-15 | Yezdi Dordi | Apparatus for applying a plating solution for electroless deposition |
| CN101209449A (en) * | 2006-12-27 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning back of wafer |
| CN101459120A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for removing interconnecting metal layer surface oxidation membrane |
| CN101774584A (en) * | 2009-01-09 | 2010-07-14 | 华南师范大学 | Method for purifying solar-grade silicon |
-
2015
- 2015-11-24 CN CN201510827442.8A patent/CN106783587B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070264436A1 (en) * | 2006-05-11 | 2007-11-15 | Yezdi Dordi | Apparatus for applying a plating solution for electroless deposition |
| CN101209449A (en) * | 2006-12-27 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning back of wafer |
| CN101459120A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method for removing interconnecting metal layer surface oxidation membrane |
| CN101774584A (en) * | 2009-01-09 | 2010-07-14 | 华南师范大学 | Method for purifying solar-grade silicon |
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| Publication number | Publication date |
|---|---|
| CN106783587B (en) | 2020-07-17 |
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