CN106783498B - The antenna arragement construction and substrate processing apparatus of substrate processing apparatus - Google Patents
The antenna arragement construction and substrate processing apparatus of substrate processing apparatus Download PDFInfo
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- CN106783498B CN106783498B CN201610695198.9A CN201610695198A CN106783498B CN 106783498 B CN106783498 B CN 106783498B CN 201610695198 A CN201610695198 A CN 201610695198A CN 106783498 B CN106783498 B CN 106783498B
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Abstract
A kind of antenna arragement construction of substrate processing apparatus is provided, substrate processing apparatus executes processing substrate by using plasma, wherein, mutiple antennas coil includes first antenna coil, the second aerial coil, third antenna coil and the 4th aerial coil, and it is arranged so that: the radius relative to the central point from first antenna coil, the radius of second aerial coil is set as 118% to 123%, the radius that the radius of third antenna coil is set as the 139% to 145%, and the 4th aerial coil is set as 155% to 170%.
Description
Cross reference to related applications
The application requires Korea Spro submitted on November 20th, 2015 and on July 6th, 2016 to Korean Intellectual Property Office respectively
The priority of state number of patent application 10-2015-0163489 and 10-2016-0085397, entire contents are incorporated in by reference
This.
Technical field
The present invention relates to a kind of antenna arragement constructions of substrate processing apparatus and one kind to have the antenna arragement construction
Substrate processing apparatus.More particularly it relates to a kind of in the processing substrate for handling substrate by generating plasma
Can be improved in equipment processing substrate uniformity antenna arragement construction and a kind of substrate with the antenna arragement construction
Processing equipment.
Background technique
In manufacture semiconductor, pattern needed for plasma is used to form film on substrate or handle.As using
The representative example of the processing substrate of gas ions may include plasma enhanced chemical vapor deposition (PECVD) processing and wait
Plasma etching processing.
According to the method for generating plasma, apparatus for processing plasma is segmented into capacitance coupling plasma (CCP)
Type and inductively coupled plasma body (ICP) type.In the case where CCP type apparatus for processing plasma, top electrode setting is being used for
It is formed on the process chamber of plasma, and lower electrode is arranged below substrate support or chuck, substrate or substrate tray load
On substrate support or chuck.On the contrary, in the case where ICP type apparatus for processing plasma, for generating plasma
Antenna structure is arranged on the top of process chamber or surrounding.
ICP type plasma substrate processing equipment includes: process chamber, formed therein by using corona treatment
The space of substrate；Substrate support is arranged in the process chamber, and substrate loads on it；Antenna is arranged in process chamber
Top on, and form plasma in the process chamber；Radio frequency (RF) power supply is supplied to antenna and executed by matching unit
Impedance matching；Etc..
In the processing substrate using the substrate processing apparatus of plasma, the plasma uniformity in process chamber is very
Important.When plasma forms uneven in the process chamber, the processing result of substrate is loaded in substrate branch according to substrate
Position in support member and change so that generating defect.
It, can be by arranging and being formed for generating plasma in the case where ICP type plasma substrate processing equipment
The antenna of body changes the treatment conditions and state in room.But ICP type plasma substrate processing in the prior art is set
Standby interior, due to the arrangement characteristic of antenna, plasma density is high at the central side of the substrate support of supporting substrate, and waits
Ion concentration is reduced towards edge, therefore, is not carried out uniform plasma density in the process chamber.
The inhomogeneities of plasma density in process chamber reduces the consistency of processing substrate, and the processing of substrate
As a result the position according to substrate on substrate support and change so that causing defect.
Summary of the invention
Have made efforts to make the present invention to provide a kind of antenna arragement construction of substrate processing apparatus and a kind of there is institute
The substrate processing apparatus of antenna arragement construction is stated, the substrate processing apparatus can equably handle substrate in the process chamber.
The exemplary embodiment of the present invention provides a kind of antenna arragement construction of substrate processing apparatus, substrate processing apparatus is logical
It crosses using plasma and executes processing substrate, antenna arragement construction includes: antenna comprising is set as based on central point CP's
The mutiple antennas coil of concentric circles；And density adjustment plate, the radius of mutiple antennas coil is adjusted, or at least partly shield
The induced magnetic field generated in mutiple antennas coil, to adjust the plasma density in process chamber.
Mutiple antennas coil may include first antenna coil, the second aerial coil, third antenna coil and the 4th day
Line coil, and be arranged so that: relative to the radius of the central point from first antenna coil, the radius of the second aerial coil is set
It is set to 118% to 123%, the radius of third antenna coil is set as 139% to 145%, and the radius of the 4th aerial coil is set
It is set to 155% to 170%.
Relative to the radius of first antenna coil, the radius of the second aerial coil can be set as 119% to 122%,
The radius of triantennary coil can be set as 130% to 143%, and the radius of the 4th aerial coil can be set as 159% to
165%.
Each of first antenna coil, the second aerial coil, third antenna coil and the 4th aerial coil can be with
It is cut open in pre-position, and power supply unit may be coupled to an end, and ground wire may be coupled to another end.
As the normal line CL that extends from central point along radial direction of setting, and when the first corner is 140 °, the second corner
Can be set to 10 ° to 50 °, the first corner be from normal line along clockwise direction to first antenna coil be cut open first
One angle of end, the second corner are the one of the second end being cut open along clockwise direction to the second aerial coil from normal line
A angle.
Third corner can be set to 190 ° to 230 °, and third corner is from normal line along clockwise direction to third day
One angle of the third end that line coil is cut open.
4th corner can be set to 300 ° to 310 °, and the 4th corner is from normal line along clockwise direction to the 4th day
One angle of the 4th end that line coil is cut open.
First to fourth aerial coil can have the cross section of quadrangle, and the width of quadrangle form and height
Size can be the 8% to 14% of the radius of the central point from first antenna coil.
First antenna coil can be set in highest plane, and the second aerial coil, third antenna coil and
Four aerial coils can be sequentially positioned in lower plane.
Multiple holes can be formed in density adjustment plate.
The circular space of the small diameter of diameter with specific density adjustment plate can be formed at the center of density adjustment plate.
Uniformity can be increased by reducing the ratio of the integral diameter of density adjustment plate and the diameter of circular space.That is,
When the diameter of circular space is identical, uniformity can be increased by reducing the integral diameter of density adjustment plate.
Another exemplary embodiment of the invention provides a kind of substrate processing apparatus, and the substrate processing apparatus includes:
Process chamber has the space for processing substrate；Substrate support positions in the process chamber, and substrate load is at it
On；And head unit, the top of covering treatment room, wherein the arragement construction of first to fourth aerial coil is included in head list
In member.
An exemplary embodiment of the present invention can improve the substrate in process chamber by improving antenna arragement construction
The uniformity of processing.
Therefore, ratio of defects can be reduced, and improves processing substrate efficiency.
By in the antenna structure for generating plasma packing density adjustment plate also help convenient for application, with hold
Malleable structure simultaneously can carry out plasma density adjustment well.
Foregoing invention content is merely illustrative, and is not intended to be limited in any way.In addition to above-mentioned illustrative
Aspect, except embodiment and feature, by reference to attached drawing and the following detailed description, other aspect, embodiment and features will
It is apparent from.
Detailed description of the invention
Fig. 1 is the sectional view of the substrate processing apparatus of an exemplary embodiment of the present invention.
Fig. 2 is show antenna arragement construction in the substrate processing apparatus of an exemplary embodiment of the present invention flat
Face figure.
Fig. 3 is to show section of the antenna arragement construction in the substrate processing apparatus of an exemplary embodiment of the present invention
Face figure.
Fig. 4 is for describing the antenna arragement construction in the substrate processing apparatus of an exemplary embodiment of the present invention
Diagram.
Fig. 5 is to show the diagram of the substrate tray of loading substrate of the invention.
Fig. 6 is the antenna arrangement knot shown in the substrate processing apparatus of another exemplary embodiment according to the present invention
The diagram of structure.
Fig. 7 is the antenna arrangement knot shown in the substrate processing apparatus of another exemplary embodiment according to the present invention
The diagram of structure.
Fig. 8 to Figure 11 is to show the antenna cloth including the substrate processing apparatus in an exemplary embodiment of the present invention
Set the diagram of the example of the density adjustment plate in structure.
Figure 12 be show by setting include in the day of the substrate processing apparatus of an exemplary embodiment of the present invention
One example of the density adjustment plate in line arragement construction executes the diagram of the result of plasma etching.
Figure 13 be show by setting include in the day of the substrate processing apparatus of an exemplary embodiment of the present invention
Another example of density adjustment plate in line arragement construction executes the diagram of the result of plasma etching.
It should be understood that attached drawing is not necessarily drawn to scale, but the various features of basic principle of the invention are presented
The expression slightly simplified illustrated.Specific design feature of the invention (including such as specific size, side as disclosed herein
To, location and shape) it will partly be determined by specific scheduled application and use environment
Appended drawing reference indicates identical or equivalent elements of the invention in the several figures of whole of attached drawing in the figure.
Specific embodiment
Hereinafter with reference to attached drawing detailed description of the present invention exemplary embodiment.
Firstly, in the appended drawing reference of composition element for indicating corresponding figure, although identical element in various figures by
It shows, but they will be indicated by identical appended drawing reference.In addition, in the following description, it is convenient to omit the known prior art
Explain in detail, to avoid unnecessarily obscure subject of the present invention.In addition, hereinafter, will describe of the invention exemplary
Embodiment.However, it should be understood that technology purport of the invention is not limited to specific embodiment, but can be by this field skill
Art personnel are altered or modified.
Fig. 1 is the sectional view of the substrate processing apparatus of an exemplary embodiment of the present invention.
Substrate processing apparatus 1 may include: process chamber 3, form the space for being used for processing substrate；Substrate support 7,
It is located in process chamber 3, and substrate 5 loads on it；Spray head 9, is used for supplying process gas；And head unit 10,
The top of covering treatment room 3.
In head unit 10, including the antenna 20 for generating plasma in process chamber 3.In addition, processing substrate is set
Standby 1 can also include matching unit (not shown), and RF power supply is supplied to antenna 20 by matching unit, and executes impedance matching.
It can be by including that at least one aerial coil forms antenna 20.In the exemplary embodiment, packet can be passed through
It includes to form the mutiple antennas coil of concentric circles to form antenna 20.
Fig. 2 is show antenna arragement construction in the substrate processing apparatus of an exemplary embodiment of the present invention flat
Face figure (plan view in terms of the inside of head unit), and Fig. 3 is shown at the substrate of an exemplary embodiment of the present invention
Manage the sectional view of the antenna arragement construction in equipment.
Referring to figs. 2 and 3, can by include the mutiple antennas coil 22 for forming the concentric circles based on central point CP, 24,
26 and 28 form antenna 20 of the invention.
In the exemplary embodiment, mutiple antennas coil 22,24,26 and 28 includes the first antenna line with least radius
The second aerial coil 24 that 22 outside of first antenna coil is arranged in, 24 outside of the second aerial coil is arranged in circle 22
Third antenna coil 26 and be arranged in 26 outside of third antenna coil and with maximum radius the 4th aerial coil 28.
In the exemplary embodiment, first to fourth aerial coil 22,24,26 and 28 can be set in the same plane.
In addition, in a further exemplary embodiment, first to fourth aerial coil 22,24,26 and 28 can be set with difference in height
Different Plane on.In the case, referring to Fig. 3, it is arranged on k level with the 4th aerial coil 28 and first antenna
The same way in highest plane is arranged in coil 22, and the 4th aerial coil 28 can be arranged step by step to first antenna coil
22。
Meanwhile in order to which mutiple antennas coil 22,24,26 and 28 is fixed to head unit 10, can be set including insulator
One or more coil fixing member 30a and 30b.Coil fixing member 30a and 30b are not limited to shape shown in Fig. 2,
But can have various shape aerial coil 22,24,26 and 28 being fixed to inside head unit 10.
Each aerial coil 22,24,26 and 28 has portions cut shape, and an end of each aerial coil
It is connected to RF power supply by first to fourth power supply unit 32,34,36 and 38, and another end passes through first to fourth ground connection
Unit 42,44,46 and 48 is grounded.
Referring to Fig. 3, the cross section of each aerial coil 22,24,26 and 28 can be formed as quadrangle form (in Fig. 3
With width w and height h), and in the exemplary embodiment, the cross section of each aerial coil 22,24,26 and 28 can be with shape
As square shape (w=h).But in an exemplary embodiment of the present invention, each aerial coil 22,24,26 and 28
Cross section can be formed as the shape of non-quadrangle, such as round or ellipse.
Fig. 4 is for describing the antenna arragement construction in the substrate processing apparatus of an exemplary embodiment of the present invention
Diagram.
In an exemplary embodiment of the present invention, each aerial coil 22,24,26 and 28 is set as being formed based on central point
The concentric circles of CP.In addition, each aerial coil 22,24,26 and 28 are with annular shape, the annular shape has one opened
Side.
Radius from central point CP to the widthwise central of first antenna coil 22 indicates by R1, from central point CP to second day
The radius of the widthwise central of line coil 24 indicates by R2, from central point CP to the radius of the widthwise central of third antenna coil 26 by
R3 is indicated, and the radius from central point CP to the widthwise central of the 4th aerial coil 28 is indicated by R4.
The distance between first antenna coil 22 and the second aerial coil 24 indicate by d1, the second aerial coil 24 and third
The distance between aerial coil 26 is indicated by d2, and the distance between third antenna coil 26 and the 4th aerial coil 28 are by d3
It indicates.
Referring to fig. 4, normal line CL is from the 12 o'clock direction of central point CP to indicate, and from normal line CL along up time
The end for the aerial coil 22,24,26 and 28 that needle direction is shown at first be known respectively as first end 22a, the second end 24a,
Third end 26a and the 4th end 28a.In the case, from normal line CL to aerial coil 22,24,26 and 28 angle by
One rotational angle theta 1, the second rotational angle theta 2, third rotational angle theta 3 and the 4th rotational angle theta 4 indicate.
In order to improve the uniformity of the processing substrate in process chamber, although keeping other treatment conditions constant, change
The arrangement of aerial coil 22,24,26 and 28, and execute plasma etching treatment.
Common etch process conditions are as shown in table 1.
[table 1]
For etching processing, as shown in figure 5,2 inches of sapphire substrate is loaded in 27 bags 102 of substrate tray 100
On.
According to treatment conditions shown in table 1, changes the arrangement of aerial coil 22,24,26 and 28 and execute plasma
Etching processing.
Test case 1
Firstly, in order to according to the radius change verification processing uniformity of aerial coil 22,24,26 and 28, each antenna line
The cross section of circle 22,24,26 and 28 is the square of the width with 12mm and height, and corner is respectively set as θ 1=
140 °, θ 2=50 °, θ 3=230 ° and θ 4=310 °.
In order to which the processing substrate for verifying the substrate being located at 100 center of substrate tray and the substrate far from the center is equal
Even property mutually compares the etching degree for being loaded in the substrate on #17, #6, #1, #2, #10 and #24 among bag shown in fig. 5
Compared with.When comparing etching degree, by the uniformity of height and width that cross section is subtriangular etching structure (according to whole
The average deviation of body) be compared to each other, and its results are shown in Table 2.
[table 2]
As shown in table 2, as the radius R1 relative to first antenna coil 22, the radius R2 of the second aerial coil 24 is 118
To 123%, the radius R3 of third antenna coil 26 is 139 to 145%, and the radius R4 of the 4th aerial coil 28 is about
When 155 to 170%, the width uniformity of plasma etching structure is relatively good.If it is considered that the height of plasma etching structure
Uniformity is spent, as the radius R1 relative to first antenna coil 22, the radius R2 of the second aerial coil 24 is 119 to 122%, the
The radius R3 of triantennary coil 26 is 130 to 143%, and the radius R4 of the 4th aerial coil 28 is about 159 to 165%
When, show preferably etching result.
Test case 2
It is based on the best third time of result in test case 2 as a result, adjusting corresponding 22,24,26 and of aerial coil
28 corner.In test case 2, in order to verify the whole uniformity of processing substrate, it will be loaded among bag shown in fig. 5
#1, #4, #6, #8, #10, #12, #13, #17, #21 and #24 on the etching degree of substrate be compared to each other.
The uniformity test result according to corner is shown in following table 3.
[table 3]
According in table 3 as a result, in the case where first jiao of θ 1 is set as 140 °, when the second rotational angle theta 2 is 10 ° to 50 °,
Third rotational angle theta 3 is 190 ° to 230 °, and when the 4th rotational angle theta 4 is 300 ° to 310 °, it is contemplated that shows good result.Specifically
Ground, compared with third rotational angle theta 3 or the 4th rotational angle theta 4, it is well established that the setting pair to the second rotational angle theta 2 relative to first jiao of θ 1
There is big influence in process uniformity.That is, when the second rotational angle theta 2 is set as relative to first jiao 1 small 130 ° to 90 ° of θ, it can
To improve process uniformity.
Test case 3
Based on according to test case 1 and 2 as a result, the radius of slave central point CP when aerial coil 22,24,26 and 28 is answered
With for the setting value in the third test in test case 1, it is real in test that the corner of aerial coil 22,24,26 and 28, which is applied,
Setting value in the second test in example 2, the width length of coil section are set as 20mm, 15mm and 10mm, and day
When the distance between the coil of line coil 22,24,26 and 28 d1, d2 and d3 are set as 6mm, 11mm and 16mm, test at substrate
Manage uniformity.
Result has been shown in table 4.
[table 4]
In antenna shown in Fig. 4 arrangement, the distance between coil d1, d2 and d3 and respective antenna coil 22,24,26 and
28 radius R1, R2, R3 and R4 and aerial coil 22,24,26 are related to 28 cross sectional dimensions.For example, as test is real
The third time in example 1, when radius R1, R2, R3 and R4 increase 26mm, the distance between coil d1, d2 and d3 are in antenna line
The cross section of circle becomes 11mm when having the width and height of 15mm.In the case, relative to the transversal of the aerial coil of R1
The ratio of face size is 12%, and the ratio of the distance between coil relative to the R1 (knot of the second test in table 4 that is 8.8%
Fruit).
In table 4, at the first time, the distance between the coil relative to R1 is 4.8%, and coil section size
It is 16%, and in the third time, the distance between the coil relative to R1 is 12.8%, and coil section size is 8%.
Therefore, there is when the cross sectional dimensions of aerial coil based on the radius R1 of first antenna coil 22 8 to 14% ratio
When, excellent etching homogeneity may be implemented.
Fig. 6 is the antenna arrangement knot shown in the substrate processing apparatus of another exemplary embodiment according to the present invention
The diagram of structure, and Fig. 7 is the antenna cloth shown in the substrate processing apparatus of another exemplary embodiment according to the present invention
Set the diagram of structure.
, can be with the position highest of first antenna coil 22 referring to Fig. 6, and the 4th aerial coil 28 of height direction is successively
Mutiple antennas coil 22,24,26 and 28 is arranged in reduced same way.The ladder arrangement of aerial coil 22,24,26 and 28 can be with
Help equably to keep the plasma density in process chamber 3 on substrate support 7.
Referring to Fig. 7, other than forming the mutiple antennas coil 22,24,26 and 28 of concentric circles, example according to the present invention
The antenna arragement construction of the substrate processing apparatus of property embodiment can also include the density of the dish type in first antenna coil 22
Adjustment plate 60.In the plasma generated in mutiple antennas coil 22,24,26 and 28, at the center of substrate support 7
Density is higher than density at its outer side.Density adjustment plate 60 is located at the center of antenna 20, to partly shield off by antenna
20 induced magnetic fields formed, thus prevent the increase of plasma density, and it is close to contribute to form whole uniform plasma
Degree.
The diameter of density adjustment plate 60 can be equal to or less than the interior diameter of first antenna coil 22.Alternatively, density
Adjustment plate 60 can be located along at least partly being overlapped in downward direction for first antenna coil 22.
In addition, density adjustment plate 60 can be positioned in the plane lower than first antenna coil 22, or it is located in and first
In identical or higher than first antenna coil 22 plane of aerial coil 22.
Density adjustment plate 60 can be made of conductive metal.In the exemplary embodiment, density adjustment plate 60 can be by all
As the conductive metal of copper (Cu) or aluminium (Al) is made.
In the present invention, as described above, by adjusting aerial coil 22,24,26 and 28 arrangement, in the process chamber can be with
Equably keep the density of the plasma generated by the mutiple antennas coil 22,24,26 and 28 of antenna 20.In addition, density tune
Whole plate 60 is located at the center of antenna 20, to partly shield off the induced magnetic field formed by antenna 20, is thus prevented at center
Plasma density increase, and contribute to form uniform plasma density.
As described above, inventor passes through experimental verification, when density adjustment plate 60 is additionally provided in antenna arragement construction
When, show the plasma etching uniformity more excellent than the test result in test case 1 to 3.
Meanwhile density adjustment plate 60 can be applied on existing antenna structure, to be used to improve the equal of plasma density
Even property.
Fig. 8 to Figure 11 is to show the antenna cloth including the substrate processing apparatus in an exemplary embodiment of the present invention
Set the diagram of the example of the density adjustment plate in structure.
The antenna arragement construction including density adjustment plate 60 proposed in the present invention facilitates in process chamber 3 equably
Form plasma density.Here, plasma density is homogenized, to be realized by corona treatment between wafer uniformly
Property (WtWU%).
By multiple duplicate trial and error, inventor demonstrates the thickness for changing density adjustment plate 60 or structure equity
Gas ions processing has an impact.
Fig. 8 shows the density adjustment plate 60 with predetermined thickness.Density adjustment plate 60 has disc-like shape, and can be with
Plasma density is adjusted by controlling material, thickness or the diameter of density adjustment plate 60.
Fig. 9 shows the density adjustment plate 60 for forming multiple holes 62 completely.Multiple holes 62 can be formed uniformly on density
In adjustment plate 60.By the diameter and quantity of control hole 62 or the diameter or thickness of density adjustment plate 60, it is adjustable it is equal from
Daughter density.
Figure 10 shows the density adjustment plate 60 at the heart formed therein of circular space 64.It is formed in circular space 64
It, can be close to adjust plasma according to the influence of the circular space 64 at center in the case where density adjustment plate 60 at center
Degree.In this case, it is possible to adjusted according to the ratio of the diameter of entire density adjustment plate 60 and the diameter of circular space 64 etc. from
Daughter density.
Figure 11 shows the density adjustment plate of at the heart formed therein of circular space 64 and multiple holes 62 formation onboard
60.Density adjustment plate 60 shown in Figure 11 is provided with Fig. 9 and hole shown in Fig. 10 62 and circular space 64.
One example will be described, plurality of substrate 5 (using substrate tray 100 shown in fig. 5) is loaded in substrate support
On part 7, (adapt to the arrangement of aerial coil 22,24,26 and 28 in the mutiple antennas coil 22,24,26 and 28 of setting antenna 20
Existing conventional configuration) and density of setting adjustment plate 60 in the case where, execute plasma etching treatment.
Multiple substrates 5 are loaded at different positions, and uniformity (WtW U%) is very between the wafer among multiple substrates 5
Important.In an exemplary embodiment of the present invention, it tests vertically with triangle Pyramid to each substrate 5
It performs etching.Figure 12 and Figure 13 shows the WtW U% according to the pyramidal height of triangle and bottom width uniformity.?
This, density adjustment plate 60 is made of copper product.
Figure 12 is to show by using the example of the antenna arragement construction of an exemplary embodiment of the present invention and hold
The diagram of the result of row plasma etching.
Figure 12 show be formed in when the diameter of density adjustment plate 60 shown in Fig. 8 changes from 180mm to 100mm it is multiple
The WtW U% of etching structure on substrate 32.
Referring to Figure 12, it is seen then that when the diameter of density adjustment plate 60 reduces, the uniformity deterioration of height, but width
Uniformity improves.That is, the size or range that are changed shielded induced magnetic field by the diameter of density adjustment plate 60 are for carving
The height of arbor or the uniformity of width have an impact.
Therefore, referring to the result of Figure 12, it is believed that: when the uniformity of width is critically important, reduce density adjustment plate 60
Diameter increase the diameter of density adjustment plate 60 and when the uniformity of height is critically important.
Figure 13 is to show another reality of the antenna arragement construction by using an exemplary embodiment of the present invention
Example and execute the diagram of the result of plasma etching.
It is 100mm and integral diameter that Figure 13, which shows density adjustment plate 60 shown in Figure 11 in the diameter of circular space 64,
Uniformity when changing from 220mm to 160mm, and uniformity when without density adjustment plate 60.
Referring to Figure 13, it is seen then that when circular space 64 is arranged at the center of density adjustment plate 60, while density adjustment plate 60
Diameter when keeping identical, the integral diameter of density adjustment plate 60 reduces, but the uniformity of height and the uniformity of width increase
By force.
As described above, exemplary embodiment has been described and illustrated in the accompanying drawings and the description.Selection and description example
Property embodiment be in order to explain certain principles of the invention and their practical application, thus it enables that those skilled in the art's system
Make and utilize various exemplary embodiments of the invention and its various alternatives and modifications.Understand from foregoing description, certain of the invention
A little aspects are not limited by the detail of example shown here, therefore, it is intended that those skilled in the art will make
It other modify and apply or equivalent way.But after considering the description and the appended drawings, many of the invention changes
Change, modification, variant and other purposes and application will become obvious those skilled in the art.Without departing substantially from master of the invention
All these changes, modifications, variant and other purposes of purport and range and application, which are considered as, to be only determined by the claims that follow
The present invention is covered.
Claims (10)
1. a kind of antenna arragement construction of substrate processing apparatus, substrate processing apparatus are executed at substrate by using plasma
Reason, antenna arragement construction include:
Antenna comprising be set as the mutiple antennas coil of the concentric circles based on central point CP；And
Density adjustment plate at least partly shields the induced magnetic field generated in mutiple antennas coil, to adjust in process chamber
Plasma density,
Wherein, mutiple antennas coil includes first antenna coil, the second aerial coil, third antenna coil and the 4th antenna line
Circle,
Wherein, each of first antenna coil, the second aerial coil, third antenna coil and the 4th aerial coil are pre-
The positioning place of setting is cut open, and power supply unit is connected to an end, and ground wire is connected to another end,
Wherein, as the normal line CL that extends from central point along radial direction of setting, and when the first corner is 140 °, the second corner
10 ° to 50 ° are set to, third corner is set to 190 ° to 230 °, and the 4th corner is set to 300 ° to 310 °, first turn
Angle is an angle of the first end being cut open along clockwise direction to first antenna coil from normal line, and the second corner is from mark
One angle of the second end that directrix is cut open to the second aerial coil along clockwise direction, third corner is from normal line along suitable
One angle of the third end that clockwise to third antenna coil is cut open, the 4th corner be from normal line along clockwise direction
One angle of the 4th end being cut open to the 4th aerial coil,
Wherein, mutiple antennas coil is arranged so that: relative to the radius of the central point from first antenna coil, the second antenna line
The radius of circle is set as 118% to 123%, and the radius of third antenna coil is set as 139% to 145%, and the 4th antenna line
The radius of circle is set as 155% to 170%.
2. antenna arragement construction as described in claim 1, wherein relative to the radius of first antenna coil, the second antenna line
The radius of circle is set as 119% to 122%, and the radius of third antenna coil is set as 130% to 143%, and the 4th antenna line
The radius of circle is set as 159% to 165%.
3. antenna arragement construction as claimed in claim 1 or 2, wherein first to fourth aerial coil has the cross of quadrangle
Section, and the width of quadrangle form and the size of height be from the 8% of the radius of the central point of first antenna coil to
14%.
4. antenna arragement construction as claimed in claim 1 or 2, wherein first antenna coil is arranged in highest plane, and
Second aerial coil, third antenna coil and the 4th aerial coil are sequentially positioned in lower plane.
5. antenna arragement construction as claimed in claim 1 or 2, wherein handle the structure on substrate by considering to be formed in
The uniformity of width and height and the diameter for adjusting density adjustment plate.
6. antenna arragement construction as claimed in claim 5, wherein multiple holes are formed in density adjustment plate.
7. antenna arragement construction as claimed in claim 5, wherein the circle of the small diameter of the diameter with specific density adjustment plate
Space is formed at the center of density adjustment plate.
8. antenna arragement construction as claimed in claim 6, wherein the circle of the small diameter of the diameter with specific density adjustment plate
Space is formed at the center of density adjustment plate.
9. antenna arragement construction as claimed in claim 7, wherein empty by the integral diameter and circle that reduce density adjustment plate
Between diameter ratio and increase uniformity.
10. a kind of substrate processing apparatus, comprising:
Process chamber has the space for processing substrate；
Substrate support positions in the process chamber, and substrate loads on it；And
Head unit, the top of covering treatment room,
Wherein, antenna arragement construction according to claim 1 or 2 is included in head unit.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0163489 | 2015-11-20 | ||
| KR20150163489 | 2015-11-20 | ||
| KR1020160085397A KR20170059369A (en) | 2015-11-20 | 2016-07-06 | Antenna arrangement structure of substrate processing apparatus and substrate processing apparatus having the same |
| KR10-2016-0085397 | 2016-07-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106783498A CN106783498A (en) | 2017-05-31 |
| CN106783498B true CN106783498B (en) | 2019-07-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938824A (en) * | 2004-03-30 | 2007-03-28 | 自适应等离子体技术公司 | Plasma source coil and plasma chamber using the same |
| CN102709144A (en) * | 2011-03-25 | 2012-10-03 | 东京毅力科创株式会社 | Plasma processing apparatus |
| WO2013027470A1 (en) * | 2011-08-23 | 2013-02-28 | 東京エレクトロン株式会社 | Plasma processor, microwave introduction device, and plasma processing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938824A (en) * | 2004-03-30 | 2007-03-28 | 自适应等离子体技术公司 | Plasma source coil and plasma chamber using the same |
| CN102709144A (en) * | 2011-03-25 | 2012-10-03 | 东京毅力科创株式会社 | Plasma processing apparatus |
| WO2013027470A1 (en) * | 2011-08-23 | 2013-02-28 | 東京エレクトロン株式会社 | Plasma processor, microwave introduction device, and plasma processing method |
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