CN106771619A - A kind of high precision temperature control resistance test system - Google Patents
A kind of high precision temperature control resistance test system Download PDFInfo
- Publication number
- CN106771619A CN106771619A CN201611216969.8A CN201611216969A CN106771619A CN 106771619 A CN106771619 A CN 106771619A CN 201611216969 A CN201611216969 A CN 201611216969A CN 106771619 A CN106771619 A CN 106771619A
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- China
- Prior art keywords
- temperature
- heat
- test
- resistance test
- test sample
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Links
- 238000012360 testing method Methods 0.000 title claims abstract description 137
- 239000000523 sample Substances 0.000 claims abstract description 98
- 238000003331 infrared imaging Methods 0.000 claims abstract description 29
- 238000005192 partition Methods 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 150000001336 alkenes Chemical class 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 239000005439 thermosphere Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 239000006185 dispersion Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/80—Calibration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
- G01R35/02—Testing or calibrating of apparatus covered by the other groups of this subclass of auxiliary devices, e.g. of instrument transformers according to prescribed transformation ratio, phase angle, or wattage rating
Abstract
The invention discloses a kind of high precision temperature control resistance test system, including：Example platform, for placing test sample, the example platform is provided with heat-conducting planar, has heat partition plane on the heat-conducting planar, and the test sample is placed in heat partition plane；Heater, located at example platform lower section, for the test sample on example platform to be heated into test temperature；Infrared imaging hygrosensor, for measuring test sample surface temperature；Probe, for when test sample surface temperature reaches test temperature, resistance test being carried out to the test sample.The present invention can realize the on-line calibration of infrared imaging hygrosensor while monitor in real time sample surfaces all position temperature values such that it is able to ensure the resistance test precision to sample surfaces optional position.
Description
Technical field
The present invention relates to ic test technique field, tested more particularly, to a kind of high-precision temperature resistance
System.
Background technology
Conventional temperature resistance test system carrys out the temperature of fixed position in test sample using thermocouple, and is waiting
After the temperature of the fixed position reaches test temperature, probe is controlled to contact sample surfaces by the control system of probe board,
Carry out the resistance test of sample surfaces diverse location at this temperature.
However, temperature unevenness caused by being waited due to heater block/heat transfer component/sample itself, will cause sample table
The temperature of face and not all position all reaches test temperature, therefore can cause test error.
Meanwhile, the precision of thermocouple itself also compares poor；When testing sample use different materials when, thermocouple with not
With the contact performance between material and how on-line calibration the problems such as, the error of test temperature can also further increased.
Therefore, it is necessary to a kind of high-precision temperature resistance test system is designed, to ensure sample surfaces any position
Temperature homogeneity, further improve measuring accuracy, and can accurately realize on-line calibration.
The content of the invention
It is an object of the invention to the drawbacks described above for overcoming prior art to exist, there is provided a kind of high precision temperature control resistance test
System.
To achieve the above object, technical scheme is as follows：
A kind of high precision temperature control resistance test system, including：
Example platform, for placing test sample, the example platform is provided with heat-conducting planar, has on the heat-conducting planar
Heat partition plane, the test sample is placed in heat partition plane；
Heater, located at example platform lower section, for the test sample on example platform to be heated into test temperature；
Infrared imaging hygrosensor, for measuring test sample surface temperature；
Probe, for when test sample surface temperature reaches test temperature, resistance test being carried out to the test sample.
Preferably, the heat-conducting planar is metal heat-conducting layer.
Preferably, the heat partition plane is graphene thermal dispersion layer.
Preferably, the heat-conducting planar is copper heat-conducting layer, and the heat partition plane is to be utilized in the copper heat conduction layer surface
Ion implanting and the graphene thermal dispersion layer of high annealing generation.
Preferably, also including the standard blackbody of an adjustable temperature, for being carried out to the infrared imaging hygrosensor
Line is calibrated.
Preferably, at least it is divided into low temperature/three regions of middle temperature/high temperature by by the test temperature of test sample, and can
The a certain normal temperature in the range of temperature province that the temperature of the standard blackbody of temperature regulating is tested needed for being respectively defined in, to pass through
The infrared imaging hygrosensor itself obtains accurate online school while being measured to test sample surface temperature
It is accurate.
Preferably, also including a control module, for receiving the test sample that the infrared imaging hygrosensor sends
When surface temperature reaches the signal of test temperature, the probe is controlled to be moved to the test sample surface specified location and connect
Touch, to carry out resistance test.
Preferably, also including a test chamber, for the high precision temperature control resistance test system to be closed in wherein to enter
The resistance test of the row test sample.
Preferably, the standard blackbody of the adjustable temperature is coupled in heater, used as the heating source of the test sample.
Preferably, by the standard blackbody of adjustable temperature by the infrared imaging hygrosensor on-line calibration to measuring essence
Spend for ± 0.05 DEG C when, then by the infrared imaging hygrosensor measure test sample surface temperature.
From above-mentioned technical proposal as can be seen that the present invention on example platform by setting the heat conduction with heat partition plane
Plane, can further strengthen the temperature homogeneity of heat-conducting planar, testing sample is uniformly heated up, so that measuring accuracy is obtained
To further lifting；Also, when temperature test is carried out, using infrared imaging hygrosensor to standard blackbody and testing sample
Temperature test is carried out respectively, can be while on-line calibration be realized using standard blackbody, all positions of monitor in real time sample surfaces
Temperature value；When sample position temperature to be measured reaches test temperature, you can carry out resistance test to sample surfaces, without etc.
Measured again during to temperature stabilization such that it is able to ensure the measuring accuracy to sample surfaces optional position.
Brief description of the drawings
Fig. 1 is a kind of high precision temperature control resistance test system structure principle chart of a preferred embodiment of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings, specific embodiment of the invention is described in further detail.
It should be noted that in following specific embodiments, when embodiments of the present invention are described in detail, in order to clear
Ground represents structure of the invention in order to illustrate, spy, not according to general scale, and has carried out part to the structure in accompanying drawing
Amplifying, deform and simplify treatment, therefore, should avoid being understood in this, as limitation of the invention.
In specific embodiment of the invention below, Fig. 1 is referred to, Fig. 1 is one kind of a preferred embodiment of the present invention
High precision temperature control resistance test system structure principle chart.As shown in figure 1, a kind of high precision temperature control resistance test system of the invention
System, at least including example platform, heater, infrared imaging hygrosensor, several major parts such as probe.
Refer to Fig. 1.Example platform is used to place test sample, for example, can be testing sample silicon chip；The sample is put down
Platform is provided with heat-conducting planar, has heat partition plane on the heat-conducting planar；The testing sample silicon chip is placed in heat partition plane.
Heat partition plane can be with the testing sample silicon chip directly contact.
Heater is located at example platform lower section, for being used as heat transfer component when it heats up, by example platform, by sample
The testing sample silicon chip placed on platform is heated to test temperature.
Infrared imaging hygrosensor by receiving sample infrared signal, to measure testing sample silicon chip surface temperature.It is red
Outer imaging temperature detector can be suspended at example platform superjacent air space, and adjustable-height and measurement angle.
Probe is used to, when testing sample silicon chip surface temperature reaches test temperature, be connect by with testing sample silicon chip surface
The mode of touching, resistance test is carried out to the testing sample silicon chip.Probe can connect conventional probe board, and can be in probe board
Transmission control module drive under move.
Refer to Fig. 1.The heat-conducting planar can be made using the heat-conducting layer of metal material；For example, can be passed using heat
Performance preferably copper heat-conducting layer is led as heat-conducting planar.The heat partition plane can be using the graphene thermal point formed by Graphene
Scattered layer is made.Because Graphene has thermal conductivity in high face, so as to heat-conducting layer (heat-conducting planar) can further be strengthened
The temperature homogeneity on surface so that measuring accuracy when carrying out temperature survey to testing sample silicon chip surface is further carried
Rise.
Used as a preferably implementation method, the heat partition plane can be by the thin layer in the copper heat-conducting layer superficial growth
Graphene thermal dispersion layer is formed.When heat partition plane is made, can be using copper heat-conducting layer as substrate, using the side of ion implanting
Method, copper heat conduction layer surface is injected into by carbon；Then by high annealing, the technology of film forming after being separated out using carbon, in copper heat-conducting layer
Surface Creation graphene thermal dispersion layer.
Typically when heater proceeds by heating, the first rapid increase of its temperature meeting is then gradually slow to rise simultaneously convergence
Design temperature (test temperature).And heat energy is transmitted to testing sample silicon chip surface by copper heat-conducting layer and graphene thermal dispersion layer
When, will cause that testing sample silicon chip surface temperature is more lower than heter temperature, and each part temperature changing trend also
Cause.
Therefore, when actual test is carried out to testing sample silicon chip surface temperature, such as test temperature is T1, then will can heat
Device heating-up temperature is set as (T1+T2) that wherein T2 can be 5-10 DEG C.So, when heter temperature is close to (T1+T2) temperature,
Its change starts to slow down.Because testing sample silicon chip surface temperature can be less than heter temperature, therefore in testing sample silicon chip surface
When temperature is close to T1 design temperatures, its surface temperature ascendant trend will also slow down.Now, you can utilize infrared imaging temperature sensing
Device monitors the temperature of whole testing sample silicon chip surface；When testing sample silicon chip surface position temperature to be measured reaches T1, can lead to
The transmission control module for crossing probe board falls probe, contacts the testing sample silicon chip surface of the position, and tests its resistance
Value.Because the process time tested using infrared imaging hygrosensor is very short, and testing sample silicon chip surface temperature becomes
Change has eased up, and temperature consistency has been guaranteed, thus need not again be measured when temperature stabilization such that it is able to ensure
The measuring accuracy of testing sample silicon chip surface optional position, and the resistance value precision that test is obtained can also be obtained greatly
Lifting.
Refer to Fig. 1.The high precision temperature control resistance test system of the invention also standard blackbody including an adjustable temperature, should
Standard blackbody is used to carry out on-line calibration to the infrared imaging hygrosensor.The infrared imaging hygrosensor receives school
Punctual standard blackbody infrared signal, shows the measurement result to standard blackbody, by the result and the standard temperature of standard blackbody
Degree is contrasted, so as to can obtain the accuracy class of the infrared imaging hygrosensor.
In order to reach optimal on-line calibration effect, the test temperature of testing sample silicon chip can be divided into low temperature/middle temperature/height
Warm three regions, or more temperature provinces, and the temperature of the standard blackbody of adjustable temperature is respectively defined in institute in test
A certain normal temperature in the range of the temperature province that need to be tested, you can test sample is being treated by the infrared imaging hygrosensor
While product silicon chip surface temperature is measured, infrared imaging hygrosensor is set itself to obtain accurate on-line calibration, so that
Solve the defect that on-line calibration cannot be carried out to thermocouple for being difficult to overcome in the prior art.
To further ensure that measuring accuracy, can be in the standard blackbody by adjustable temperature to the infrared imaging temperature sensing
When device carries out on-line calibration, calibrated to certainty of measurement for ± 0.05 DEG C when, then by the infrared imaging hygrosensor
Measure the temperature of testing sample silicon chip surface.
High precision temperature control resistance test system of the invention may also include a control module, and the control module may be provided at spy
In the control system of pin board, and communication connection will be set up between control module and infrared imaging hygrosensor；When control mould
Block receives the temperature letter that the testing sample silicon chip surface temperature sent from the infrared imaging hygrosensor reaches test temperature
Number when, you can drive the probe to be moved to the testing sample silicon chip surface specified location simultaneously by controlling transmission control module
It is in contact, to carry out resistance test.
Above-mentioned high precision temperature control resistance test system of the invention can be also arranged in a closed test chamber, so as to
Glitch-free resistance test is carried out to the testing sample silicon chip, further to improve measuring accuracy.
Additionally, the standard blackbody of the adjustable temperature can also be coupled with heater be integrated, as the testing sample
The heating source of silicon chip is used, and can be used to carry out on-line calibration to the infrared imaging hygrosensor simultaneously.
In sum, the present invention, can be further by setting the heat-conducting planar with heat partition plane on example platform
Strengthen the temperature homogeneity of heat-conducting planar, testing sample is uniformly heated up, so that measuring accuracy is further lifted；
Also, when temperature test is carried out, trip temperature is entered respectively to standard blackbody and testing sample using infrared imaging hygrosensor
Test, can be while on-line calibration be realized using standard blackbody, the temperature value of all positions of monitor in real time sample surfaces；Work as sample
When product position temperature to be measured reaches test temperature, you can carry out resistance test to sample surfaces, without until temperature stabilization
Measure again such that it is able to ensure the measuring accuracy to sample surfaces optional position.
Above-described is only the preferred embodiments of the present invention, and the embodiment simultaneously is not used to limit patent guarantor of the invention
Shield scope, therefore every equivalent structure change made with specification of the invention and accompanying drawing content, similarly should be included in
In protection scope of the present invention.
Claims (10)
1. a kind of high precision temperature control resistance test system, it is characterised in that including：
Example platform, for placing test sample, the example platform is provided with heat-conducting planar, has heat point on the heat-conducting planar
Plane is dissipated, the test sample is placed in heat partition plane；
Heater, located at example platform lower section, for the test sample on example platform to be heated into test temperature；
Infrared imaging hygrosensor, for measuring test sample surface temperature；
Probe, for when test sample surface temperature reaches test temperature, resistance test being carried out to the test sample.
2. high precision temperature control resistance test system according to claim 1, it is characterised in that the heat-conducting planar is metal
Heat-conducting layer.
3. high precision temperature control resistance test system according to claim 1, it is characterised in that the heat partition plane is stone
Black alkene heat partition layer.
4. high precision temperature control resistance test system according to claim 1, it is characterised in that the heat-conducting planar is led for copper
Thermosphere, the heat partition plane is the graphene thermal point generated using ion implanting and high annealing in the copper heat conduction layer surface
Dissipate layer.
5. high precision temperature control resistance test system according to claim 1, it is characterised in that also including an adjustable temperature
Standard blackbody, for carrying out on-line calibration to the infrared imaging hygrosensor.
6. high precision temperature control resistance test system according to claim 5, it is characterised in that by by the survey of test sample
Examination temperature is at least divided into low temperature/three regions of middle temperature/high temperature, and the temperature of the standard blackbody of adjustable temperature is respectively defined in into institute
A certain normal temperature in the range of the temperature province that need to be tested, with by the infrared imaging hygrosensor to test sample
While surface temperature is measured, accurate on-line calibration itself is obtained.
7. high precision temperature control resistance test system according to claim 1, it is characterised in that also including a control module,
When reaching the signal of test temperature for receiving the test sample surface temperature that the infrared imaging hygrosensor sends, control
The probe is moved to the test sample surface specified location and is in contact, to carry out resistance test.
8. high precision temperature control resistance test system according to claim 1, it is characterised in that also including a test chamber,
The resistance test of the test sample is wherein carried out for the high precision temperature control resistance test system to be closed in.
9. high precision temperature control resistance test system according to claim 5, it is characterised in that the standard of the adjustable temperature
Black matrix is coupled in heater, used as the heating source of the test sample.
10. the high precision temperature control resistance test system according to claim 5,6 or 9, it is characterised in that by adjustable temperature
Standard blackbody when being ± 0.05 DEG C by the infrared imaging hygrosensor on-line calibration to certainty of measurement, then by described red
Outer imaging temperature detector measurement test sample surface temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611216969.8A CN106771619B (en) | 2016-12-26 | 2016-12-26 | High-precision temperature control resistance testing system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611216969.8A CN106771619B (en) | 2016-12-26 | 2016-12-26 | High-precision temperature control resistance testing system |
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| Publication Number | Publication Date |
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| CN106771619A true CN106771619A (en) | 2017-05-31 |
| CN106771619B CN106771619B (en) | 2020-02-14 |
Family
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| CN201611216969.8A Active CN106771619B (en) | 2016-12-26 | 2016-12-26 | High-precision temperature control resistance testing system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109188086A (en) * | 2018-09-19 | 2019-01-11 | 许昌学院 | A kind of test method that temperature influences space medium material electric conductivity |
| CN111351985A (en) * | 2018-12-24 | 2020-06-30 | 深圳御烟实业有限公司 | Resistance detection system and method |
| CN112857582A (en) * | 2021-01-14 | 2021-05-28 | 山东省科学院海洋仪器仪表研究所 | Self-calibration method of infrared temperature measurement sensor of ocean buoy platform |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070244664A1 (en) * | 2006-04-14 | 2007-10-18 | Hon Hai Precision Industry Co., Ltd. | Resistance calculating method |
| CN103105232A (en) * | 2012-11-27 | 2013-05-15 | 凯迈（洛阳）测控有限公司 | Diaphragm black body |
| CN103913635A (en) * | 2014-04-08 | 2014-07-09 | 中国人民解放军军械工程学院 | System for measuring surface resistivity of material on high-temperature condition |
| CN203858219U (en) * | 2014-01-02 | 2014-10-01 | 上海大学 | Device for measuring seebeck coefficient and electrical resistivity of thermoelectric material |
| CN204062952U (en) * | 2014-09-26 | 2014-12-31 | 上海集成电路研发中心有限公司 | A kind of radiator structure of LED lamp |
| CN105588958A (en) * | 2016-01-22 | 2016-05-18 | 中山大学 | Rapid multifunctional electronic component temperature characteristic measuring instrument and testing cavity |
-
2016
- 2016-12-26 CN CN201611216969.8A patent/CN106771619B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070244664A1 (en) * | 2006-04-14 | 2007-10-18 | Hon Hai Precision Industry Co., Ltd. | Resistance calculating method |
| CN103105232A (en) * | 2012-11-27 | 2013-05-15 | 凯迈（洛阳）测控有限公司 | Diaphragm black body |
| CN203858219U (en) * | 2014-01-02 | 2014-10-01 | 上海大学 | Device for measuring seebeck coefficient and electrical resistivity of thermoelectric material |
| CN103913635A (en) * | 2014-04-08 | 2014-07-09 | 中国人民解放军军械工程学院 | System for measuring surface resistivity of material on high-temperature condition |
| CN204062952U (en) * | 2014-09-26 | 2014-12-31 | 上海集成电路研发中心有限公司 | A kind of radiator structure of LED lamp |
| CN105588958A (en) * | 2016-01-22 | 2016-05-18 | 中山大学 | Rapid multifunctional electronic component temperature characteristic measuring instrument and testing cavity |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109188086A (en) * | 2018-09-19 | 2019-01-11 | 许昌学院 | A kind of test method that temperature influences space medium material electric conductivity |
| CN111351985A (en) * | 2018-12-24 | 2020-06-30 | 深圳御烟实业有限公司 | Resistance detection system and method |
| CN112857582A (en) * | 2021-01-14 | 2021-05-28 | 山东省科学院海洋仪器仪表研究所 | Self-calibration method of infrared temperature measurement sensor of ocean buoy platform |
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| Publication number | Publication date |
|---|---|
| CN106771619B (en) | 2020-02-14 |
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