CN106771376A - A kind of method for preparing atomic-force microscope needle-tip - Google Patents
A kind of method for preparing atomic-force microscope needle-tip Download PDFInfo
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- CN106771376A CN106771376A CN201710127121.6A CN201710127121A CN106771376A CN 106771376 A CN106771376 A CN 106771376A CN 201710127121 A CN201710127121 A CN 201710127121A CN 106771376 A CN106771376 A CN 106771376A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
Abstract
The present invention relates to AFM field, a kind of method for preparing atomic-force microscope needle-tip has the current feedback loop being made up of power supply U, the gap location between resistance, current feedback system, cantilever, needle point, sample and needle point and sample, cheated every the depression that 100nm has a diameter 100nm, depth 30nm on its first specific sample surface, second specific sample surface has the projection of a 20nm high, diameter 10nm every 20nm, thorn first is produced with the first specific sample, then the thorn perpendicular to sample surfaces is grown with the second specific sample；The inspection whether sharp parameter of needle point：Worked using the more smooth sample in another surface and with phase shifting modes, if an initial amplitude is AO, scanning distance 15nm, setting value is 0.6AO, if being negative in even curface phase shift, then it is assumed that be the sharpened tip that can reach requirement of experiment；If phase shift is not negative, repetition is powered up and forms a process for high electric field with the gap location between sample and needle point.
Description
Technical field
The present invention relates to a kind of preparation field of the atomic-force microscope needle-tip of nanostructured, particularly can be big in normal temperature
Directly prepared on original needle point under the conditions of gas and meet the needle point of experiment demand, the simple and effective one kind of preparation method and prepare original
The method of sub- force microscope needle point.
Background technology
AFM (Atomic Force Microscope, AFM) is using atom, intermolecular interaction
Power observes the instrument of body surface microscopic appearance, and its general principle is：It is fixed on by by the probe of a nano-scale dimension
Can on the micron order elastic cantilever of sensitive manipulation, when needle point and sample closely when, the atom and sample surfaces at needle point tip
Active force between atom can bend the micron order elastic cantilever, deviate original position；Meanwhile, there is beam of laser to irradiate
Onto cantilever, and reflex to laser monitoring device, the bending of elastic cantilever result in the deflection of laser, thus obtain the inclined of hot spot
Shifting amount, according to the side-play amount and its vibration frequency, as feedback signal, is input into computer by specific reponse system,
Computer can rebuild 3-D view with this, so as to obtain the pattern and composition information of sample surfaces.
AFM can work in different modes, and these patterns mainly have contact mode, tapping-mode, lateral
Force mode etc..In contact mode, needle point is streaked from sample surfaces, and the height on surface can be gone out with Direct Analysis from the deflection of cantilever
Figure.In tapping-mode or lateral force mode, there is signal source to drive cantilever vibration with certain external reference frequency, in scanning sample
During the frequency of cantilever vibration can change, the parameter such as amplitude, phase and resonance is related to the active force of probe and sample room,
The change of the vibration of the external reference that these parameter relative signal sources provide can reflect the property of sample.Wherein, as rapping
One expansion technique of pattern, phase shifting modes drive phase angle and the cantilever probe of the signal source of cantilever probe vibration by detection
The change of the difference (i.e. the phase shift of signal source and actual vibration) at the phase angle of actual vibration is imaged.
AFM (AFM) is with the obvious advantage relative to SEM, and first, AFM can be carried
For real three-dimension surface, and SEM can only provide two dimensional image；Second, AFM need not be right
Any specially treated of sample, such as copper facing or carbon, this treatment can cause irreversible injury to sample；3rd, atomic force
Microscope at ambient pressure even under liquid environment can works fine, can be used to study biological macro molecules, or even living
Biological tissue, just as taking a part for the whole, slowly stroked on the surface of object, the shape of atom can be showed intuitively very much.
And electron microscope needs operation in high vacuum conditions.
Atomic-force microscope needle-tip is typically silicon materials Si or Si3N4It is made, difference is coated with outside it according to the need for difference
Metal level.When traditional atomic force microscope probe needle point is worn, its radius of curvature can become greatly, scanning obtain sample
Image resolution ratio can be reduced, therefore the imaging of AFM is influenceed very large by its probe, therefore atomic force microscopy
Mirror needle point is running stores, is especially easily lost after high accuracy experiment in use, and replacing needle point is cumbersome and time consuming, and
Delay experiment progress, the method for current silicon needle point tip-growth thorn has：Ion or electron beam deposition, focused ion beam are carved
Erosion, chemical vapor carbon deposition nanotube or metal nano-tube etc..But the defect of these methods has：One is relatively costly, and two are
Needs are carried out in vacuum chamber and the requirement to vacuum is high, and three can not be carried out in the original location, it is necessary to interrupt experiments process so that no
The needle point that easily and timely can more renew, is delayed experiment progress, and a kind of method for preparing atomic-force microscope needle-tip can be solved
Certainly this problem.
The content of the invention
In order to solve the above problems, a kind of method for preparing atomic-force microscope needle-tip is by setting up current feedback system
The distance between system control needle point and sample, are successively used using the first specific sample and the second specific sample, are grown vertical
In the thorn for meeting requirement of experiment of sample surfaces, atom directly can be in atmospheric conditions operated and significantly increased
The acuity of force microscope needle point, the needle point for meeting experiment demand can either be in the original location prepared without changing needle point, be both not required to
Want an airtight cavity for being filled with some protective gas, it is not required that by the more complicated instrument for preparing, method is effective.
The technical solution adopted in the present invention is：
A kind of method for preparing atomic-force microscope needle-tip, realizing the device of methods described mainly includes resistance, hangs
Gap location, thorn, current feedback system between arm, needle point, sample, sample and needle point, electro-optical feedback system, Piezoelectric Driving
Device, power supply U, wherein power supply U positive poles connect sample, negative pole and connect resistance, current feedback system, cantilever and needle point, the needle point successively
The cantilever lower section is fixed on, the sample includes the first specific sample and the second specific sample and is located at needle point lower section；
When the needle point approaches the sample surfaces to certain distance, the power supply U is added to the needle point, energy by the resistance
Enough gap locations between the sample and needle point form a high electric field, so as to grow length several for the needle point front end
Hundred nanometers of the thorn, with by the power supply U, between resistance, current feedback system, cantilever, needle point, sample and needle point
Gap location and sample composition current feedback loop, when the current feedback system open working condition when, institute can be detected
State weak current between needle point and the sample and by its with current value ratio set in advance compared with the current feedback system
Feedback signal is input into the piezoelectric actuator, can control the distance between the needle point and described sample；The of the sample
One specific sample surface has to be recessed with the reverse taper of array arrangement cheats, and has a diameter 100nm, depth 30nm every 100nm
Depression hole, the second specific sample surface has with the projection of array arrangement, has a 20nm high, diameter 10nm every 20nm
Projection.Its specific method is：
First growth thorn process：From first specific sample, using AFM tapping-mode by institute
State needle point and be moved horizontally to depression hole top position, close electro-optical feedback system, firing current reponse system, current settings
It is 1pA to be worth, and next opens the power supply U, and make the output voltage of power supply U within 2 second time from 0 increase to 20V to 90V it
Between certain particular value, close power supply U after being kept for 2 seconds, compared to smooth sample surfaces, needle point is focused on when being in depression hole position
Electric field is stronger, it is easier to produce the thorn, in order that thorn grows longer, it is complete using first specific sample
Into after first growth thorn process, the needle point is moved horizontally to first spy using AFM tapping-mode
Another depression hole top of sample surface, then repeatedly first growth thorn process.
Regrow thorn process：After first growth thorn process terminates, first specific sample is changed into institute
The second specific sample is stated, AFM is worked with tapping-mode, opens electro-optical feedback system, closes current feedback system,
It is then turned on power supply U, and makes certain particular value that the output voltage of power supply U is maintained between 10V to 20V, then needle point starts to sweep
Sample is retouched, due to the needle point described in scanning process and the gentle touchdown of the second specific sample protrusion of surface such that it is able to
The thorn for making the direction arbitrariness of original growth larger slightly changes direction, and grows the symbol perpendicular to the sample surfaces
Close the thorn of requirement of experiment.
And it is whether sharp with needle point described in following parametric test：Use the sample that another surface is more smooth, atom
Force microscope is worked with phase shifting modes, if an initial amplitude is A0, scanning distance 15nm, setting value is 0.6AO, if flat
Whole surface phase shift is negative, then it is assumed that is sharp needle point, can reach requirement of experiment；If phase shift is not for negative, it is necessary to repeat to add
The power supply U forms a process for high electric field with the gap location between the sample and needle point, until grow one hanging down
Directly in the thorn for meeting requirement of experiment of the sample surfaces.
First growth thorn process, first can drop output voltage values from former setting value in 5 seconds before closing power supply U
To 0, the thorn can be made to be combined more firm with the needle point.
The projection on the second specific sample surface, can be towards inclined raised, using with this to same
Second specific sample of inclined protrusions carries out the scanning of single direction row and makes the direction of scanning relative with the direction of the inclined protrusions
When can obtain more preferable effect, needle point is lifted away from sample after a line end of scan, returning to beginning-of-line carries out the scanning of next line,
It is repeated in.
The sample can be the film, or semi-conducting material Si or GaAs of conductor metal nickel, cobalt, gold, platinum etc.；
The needle point can be semi-conducting material, it is possible to have metal coating；The resistance is 20G ohm of steady resistance, prevents electricity
Electric current is excessive in stream backfeed loop.
Thorn formation basic theory：Electric field energy is larger in a relatively affined region holding one of near sample surface
Value, now nanostructure growth can be formed on sample and needle point, spatially, because one of electrode is the point of needle point
End, the electric field is uneven, the transfer of the adsorbate of sample surfaces in non-uniform electric field, and is decomposed, self assembly again afterwards, from
And cause to form thorn on needle point.The source of thorn composition material is absorption in the atmospheric environment of needle point and sample surfaces
Hydrocarbon adsorbate, constitute the decomposition of the hydrocarbon of adsorbate, form carbon nanometer in needle point and sample surfaces
Structure.By applying power supply, can all there is deposition on sample and needle point, in most cases, the material for depositing is carbon, by inhaling
Attached hydrocarbon is decomposed.
The beneficial effects of the invention are as follows：
A kind of method for preparing atomic-force microscope needle-tip controls needle point and sample by setting up current feedback system
The distance between, successively used using the first specific sample and the second specific sample, grow meeting perpendicular to sample surfaces
The thorn of requirement of experiment, a high electric field is added by the gap location between sample and needle point, can directly in big gas bar
Needle point is prepared under part and the acuity of atomic-force microscope needle-tip is significantly increased, need not both be carried out in vacuum chamber,
Need not be by the more complicated instrument for preparing, effectively, what easily and timely can more be renewed meets the needle point of experiment demand to method,
And then proceed experiment, accelerate experiment process, and low cost.
Brief description of the drawings
Further illustrated with reference to figure of the invention：
Fig. 1 is schematic diagram of the present invention；
Fig. 2 is the enlarged diagram of the gap location between sample and needle point；
Fig. 3 is the first specific sample enlarged diagram；
Fig. 4 is one of the second specific sample enlarged diagram；
Fig. 5 is two enlarged diagrams of the second specific sample.
In figure, 1. resistance, 2. cantilever, 3. needle point, 4. sample, the 5. gap location between sample and needle point, 6. thorn, 7.
Current feedback system, 8. electro-optical feedback system, 9. piezoelectric actuator.
Specific embodiment
If Fig. 1 is schematic diagram of the present invention, realizing the device of methods described mainly includes resistance 1, cantilever 2, needle point 3, sample
4th, between sample and needle point gap location 5, thorn 6, current feedback system 7, electro-optical feedback system 8, piezoelectric actuator 9, electricity
Source U, wherein power supply U positive poles connect sample 4, negative pole and connect resistance 1, current feedback system 7, cantilever 2 and needle point 3, the needle point 3 successively
The lower section of the cantilever 2 is fixed on, the sample 4 includes the first specific sample and the second specific sample and is located under the needle point 3
Side；With by the power supply U, resistance 1, current feedback system 7, cantilever 2, needle point 3, the gap location 5 between sample and needle point and
Sample 4 composition current feedback loop, when the current feedback system 7 open working condition when, can detect the needle point 3 with
Weak current between the sample 4 and by its with current value ratio set in advance compared with the feedback letter of the current feedback system 7
Number input piezoelectric actuator 9, the distance between the needle point 3 and described sample 4 can be controlled.
If Fig. 2 is the enlarged diagram of the gap location between sample and needle point, when the needle point 3 approaches the table of the sample 4
When face is to certain distance, the power supply U is added to the needle point 3 by the resistance 1, can be between the sample and needle point
Gap location 5 formed a high electric field so that the front end of the needle point 3 grows the thorn 6 of hundreds of nanometers of length.
If Fig. 3 is the first specific sample enlarged diagram, the first specific sample surface has with the recessed of array arrangement
Pitfall, the depression for having a diameter 100nm, depth 30nm reverse tapers every 100nm is cheated.
If Fig. 4 is one of the second specific sample enlarged diagram, the second specific sample surface has with array arrangement
Thrust：There is the projection of a 20nm high, diameter 10nm every 20nm.
If Fig. 5 is two enlarged diagrams of the second specific sample, the projection on the second specific sample surface can be with
Be to same towards inclined raised, using the second specific sample with the inclined protrusions carry out the scanning of single direction row and
Enable to obtain more preferable effect when the direction of scanning is relative with the direction of the inclined protrusions, be lifted away from needle point after a line end of scan
Sample, returning to beginning-of-line carries out the scanning of next line, is repeated in.
A kind of method for preparing atomic-force microscope needle-tip, realizing the device of methods described mainly includes resistance 1, hangs
Arm 2, needle point 3, sample 4, the gap location 5 between sample and needle point, thorn 6, current feedback system 7, electro-optical feedback system 8,
Piezoelectric actuator 9, power supply U, wherein power supply U positive poles connect sample 4, negative pole connect successively resistance 1, current feedback system 7, cantilever 2 with
Needle point 3, the needle point 3 is fixed on the lower section of the cantilever 2, and the sample 4 includes the first specific sample and the second specific sample simultaneously
Positioned at the lower section of the needle point 3；When the needle point 3 approaches the surface of the sample 4 to certain distance, the power supply U is passed through into institute
State resistance 1 and be added to the needle point 3, gap location 5 that can be between the sample and needle point forms a high electric field, so that
The front end of the needle point 3 grows the thorn 6 of hundreds of nanometers of length, with by the power supply U, resistance 1, current feedback system
The current feedback loop of system 7, cantilever 2, needle point 3, the gap location 5 between sample and needle point and sample 4 composition, when the electric current is anti-
When feedback system 7 opens working condition, can detect weak current between the needle point 3 and the sample 4 and by its with it is advance
The current value ratio of setting is compared with the feedback signal of the current feedback system 7 is input into the piezoelectric actuator 9, can control the pin
Point 3 is the distance between with the sample 4；First specific sample surface of the sample 4 has recessed with the reverse taper of array arrangement
Pitfall, the depression for having a diameter 100nm, depth 30nm every 100nm is cheated, and the second specific sample surface has with array arrangement
Projection, have the projection of a 20nm high, diameter 10nm every 20nm.
Its specific method is：
First growth thorn process：From first specific sample, using AFM tapping-mode by institute
State needle point 3 and be moved horizontally to depression hole top position, close electro-optical feedback system 8, firing current reponse system 7, electric current
Setting value is 1pA, next opens the power supply U, and make the output voltage of power supply U within 2 second time from 0 increase to 20V to
Certain particular value between 90V, power supply U is closed after being kept for 2 seconds, and compared to smooth sample surfaces, needle point is in depression hole position
When focusing electric field it is stronger, it is easier to produce the thorn 6, it is specific using described first in order that thorn grows longer
Sample, after completing first growth thorn process, institute is moved horizontally to using AFM tapping-mode by the needle point 3
Another depression hole top of the first specific sample surface is stated, then repeatedly first growth thorn process.
Regrow thorn process：After first growth thorn process terminates, first specific sample is changed into institute
The second specific sample is stated, AFM is worked with tapping-mode, opens electro-optical feedback system 8, closes current feedback system
7, it is then turned on power supply U, and make certain particular value that the output voltage of power supply U is maintained between 10V to 20V, then needle point starts
Scanning sample, due to the needle point 3 described in scanning process and the gentle touchdown of the second specific sample protrusion of surface, so as to
The thorn for enough making the direction arbitrariness of original growth larger slightly changes direction, and grows perpendicular to the surface of the sample 4
The thorn 6 for meeting requirement of experiment.
And it is whether sharp with needle point 3 described in following parametric test：Use the sample that another surface is more smooth, atom
Force microscope is worked with phase shifting modes, if an initial amplitude is A0, scanning distance 15nm, setting value is 0.6AO, if flat
Whole surface phase shift is negative, then it is assumed that is sharp needle point, can reach requirement of experiment；If phase shift is not for negative, it is necessary to repeat to add
The power supply U forms a process for high electric field with the gap location 5 between the sample and needle point, until grow one hanging down
Directly in the thorn 6 for meeting requirement of experiment on the surface of the sample 4.
First growth thorn process, first can drop output voltage values from former setting value in 5 seconds before closing power supply U
To 0, the thorn 6 can be made to be combined more firm with the needle point 3.
The projection on the second specific sample surface, can be towards inclined raised, using with this to same
Second specific sample of inclined protrusions carries out the scanning of single direction row and makes the direction of scanning relative with the direction of the inclined protrusions
When can obtain more preferable effect, needle point is lifted away from sample after a line end of scan, returning to beginning-of-line carries out the scanning of next line,
It is repeated in.
The sample 4 can be conductor metal nickel, cobalt, gold, platinum etc. film, or semi-conducting material Si or
GaAs；The needle point 3 can be semi-conducting material, it is possible to have metal coating；The resistance 1 is 20G ohm of steady resistance,
Electric current is excessive in preventing current feedback loop.
Thorn formation basic theory：Electric field energy keeps one in a relatively affined region of the near surface of the sample 4
Individual larger value, now can form nanostructure growth on the sample 4 and the needle point 3, spatially, because one of them
Electrode is the tip of needle point, and the electric field is uneven, the transfer of the adsorbate on the surface of the sample 4 in non-uniform electric field,
And decompose, self assembly again afterwards, so that forming thorn on the needle point 3.The source of thorn composition material is that absorption exists
The adsorbate of the hydrocarbon in the atmospheric environment on the needle point 3 and the surface of the sample 4, constitutes the nytron of adsorbate
The decomposition of thing, forms carbon nano-structured in the needle point 3 and the surface of the sample 4.By applying power supply, in the He of the needle point 3
Can all have deposition on the sample 4, in most cases, the material for depositing is carbon, decomposed by the hydrocarbon that adsorbs and
Come.
Claims (6)
1. a kind of method for preparing atomic-force microscope needle-tip, realizes the device of methods described mainly including resistance (1), cantilever
(2), needle point (3), sample (4), the gap location (5) between sample and needle point, thorn (6), current feedback system (7), photoelectricity
Reponse system (8), piezoelectric actuator (9), power supply U, wherein power supply U positive poles connect sample (4), negative pole and connect resistance (1), electric current successively
Reponse system (7), cantilever (2) and needle point (3), the needle point (3) are fixed on the cantilever (2) lower section, and the sample (4) includes
First specific sample and the second specific sample are simultaneously located at the needle point (3) lower section；When the needle point (3) approaches the sample (4)
When surface is to certain distance, the power supply U is added to the needle point (3) by the resistance (1), can be in the sample and pin
Gap location (5) between point forms a high electric field, so that the needle point (3) front end grows the institute of hundreds of nanometers of length
Thorn (6) is stated,
It is characterized in that：With by the power supply U, resistance (1), current feedback system (7), cantilever (2), needle point (3), sample and pin
The current feedback loop of gap location (5) and sample (4) composition between point, when the current feedback system (7) opens work shape
During state, weak current between the needle point (3) and the sample (4) can be detected and by itself and current value set in advance
Compare, current feedback system (7) feedback signal is input into the piezoelectric actuator (9), can control the needle point (3) and institute
State the distance between sample (4)；
First specific sample surface of the sample (4) has to be recessed with the reverse taper of array arrangement cheats, and has one every 100nm
The depression hole of diameter 100nm, depth 30nm, the second specific sample surface has with the projection of array arrangement, has one every 20nm
Individual 20nm high, the projection of diameter 10nm,
Its specific method is：
First growth thorn process：From first specific sample, using AFM tapping-mode by the pin
Sharp (3) are moved horizontally to depression hole top position, close electro-optical feedback system (8), firing current reponse system (7), electricity
Stream setting value is 1pA, next opens the power supply U, and the output voltage of power supply U was increased to 20V from 0 within 2 second time
To certain particular value between 90V, power supply U is closed after being kept for 2 seconds, compared to smooth sample surfaces, needle point is in depression hole position
Focusing electric field is stronger when putting, it is easier to produce the thorn (6),
In order that thorn grows longer, using first specific sample, after completing first growth thorn process, use
Be moved horizontally to the needle point (3) on another depression hole of the first specific sample surface by AFM tapping-mode
Side, then repeatedly first growth thorn process；
Regrow thorn process：After first growth thorn process terminates, first specific sample is changed into described
Two specific samples, AFM is worked with tapping-mode, opens electro-optical feedback system (8), closes current feedback system
(7), it is then turned on power supply U, and makes certain particular value that the output voltage of power supply U is maintained between 10V to 20V, then needle point is opened
Begin scanning sample, due to the needle point described in scanning process (3) and the gentle touchdown of the second specific sample protrusion of surface, from
And the thorn that the direction arbitrariness of original growth can be made larger slightly changes direction, and grow perpendicular to the sample
(4) thorn (6) for meeting requirement of experiment on surface；
And it is whether sharp with needle point (3) described in following parametric test：Use the sample that another surface is more smooth, atomic force
Microscope is worked with phase shifting modes, if an initial amplitude is A0, scanning distance 15nm, setting value is 0.6A0, if smooth
Surface phase shift be negative, then it is assumed that be sharp needle point, requirement of experiment can be reached；If phase shift is not for negative, it is necessary to repeat plus institute
State power supply U and one process of high electric field is formed with the gap location (5) between the sample and needle point, until grow one hanging down
Directly in the thorn (6) for meeting requirement of experiment on the sample (4) surface.
2. a kind of method for preparing atomic-force microscope needle-tip according to claim 1, it is characterized in that：First growth thorn-like
Output voltage values first can be down to 0 by thing process in 5 seconds before closing power supply U from former setting value, can make the thorn
(6) combine more firm with the needle point (3).
3. a kind of method for preparing atomic-force microscope needle-tip according to claim 1, it is characterized in that：Described second is specific
The projection of sample surfaces, can be towards inclined raised, using the second specific sample with the inclined protrusions to same
Product carry out the scanning of single direction row and enable scanning direction it is relative with the direction of the inclined protrusions when obtain more preferable effect,
Needle point is lifted away from sample after a line end of scan, returning to beginning-of-line carries out the scanning of next line, is repeated in.
4. a kind of method for preparing atomic-force microscope needle-tip according to claim 1, it is characterized in that：The sample (4)
Can be the film, or semi-conducting material Si or GaAs of conductor metal nickel, cobalt, gold, platinum etc..
5. a kind of method for preparing atomic-force microscope needle-tip according to claim 1, it is characterized in that：The needle point (3)
It can be semi-conducting material, it is possible to have metal coating.
6. a kind of method for preparing atomic-force microscope needle-tip according to claim 1, it is characterized in that：The resistance (1)
It is 20G ohm of steady resistance.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109507454A (en) * | 2018-11-07 | 2019-03-22 | 中北大学 | A kind of preparation method measuring crystal face active force atomic-force microscope needle-tip |
| CN110658360A (en) * | 2019-09-16 | 2020-01-07 | 浙江大学 | Method and device for preparing superfine atomic force microscope metal probe |
| CN110967527A (en) * | 2018-09-30 | 2020-04-07 | 中国计量科学研究院 | Preparation device for scanning probe tip |
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| CN110967527A (en) * | 2018-09-30 | 2020-04-07 | 中国计量科学研究院 | Preparation device for scanning probe tip |
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| CN110658360B (en) * | 2019-09-16 | 2020-08-18 | 浙江大学 | Method and device for preparing superfine atomic force microscope metal probe |
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