CN106770401A - The measuring method of hydrogen helium isotope nuclear scattering cross-section - Google Patents
The measuring method of hydrogen helium isotope nuclear scattering cross-section Download PDFInfo
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- CN106770401A CN106770401A CN201710052608.2A CN201710052608A CN106770401A CN 106770401 A CN106770401 A CN 106770401A CN 201710052608 A CN201710052608 A CN 201710052608A CN 106770401 A CN106770401 A CN 106770401A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/203—Measuring back scattering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/2813—Producing thin layers of samples on a substrate, e.g. smearing, spinning-on
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Abstract
The invention belongs to hydrogen helium isotope field of measuring technique, specially a kind of measuring method of hydrogen helium isotope nuclear scattering cross-section.The present invention prepares a kind of Film laminated target using the method for magnetron sputtering deposition, and the composition of composition target mainly includes three parts：One is film-substrate；Two is the film layer rich in tested secondary element；Three is to be covered in the very thin coating on the film rich in tested secondary element, this layer of coating can not only effectively prevent tested secondary element from being desorbed from film in preservation and measurement process, and can play a part of in measurement process to incoming particle Dose calibration.The present invention accurately draws the differential scattering in the certain energy range in special angle position further according to Cross-Section Formula by determining experiment parameter.This relative measurement method avoids the error caused in incident ion number Q, solid angle Ω measurement process so that measuring accuracy can be greatly improved.
Description
Technical field
The invention belongs to hydrogen helium isotope field of measuring technique, and in particular to a kind of survey of hydrogen helium isotope nuclear scattering cross-section
Amount method.
Background technology
Hydrogen helium isotope content and depth profile in accurate measurement material is in nuclear energy, hydrogen storage storage tritium material, solar energy
Many fields such as battery and hydrogen fuel cell suffer from particularly important meaning.In existing several measurement hydrogen helium isotopes
In method, ion beam analysis method（Mainly include elastic recoil analysis, Proton backscattering analysis）Because it is accurate, efficient simultaneously
The characteristics of macroscopical mechanism to material is lossless is as one of optimal measuring method.
The hydrogen helium isotope content and depth profile in material are measured for the method for passing through ion beam analysis, first has to know
The average differential scattering of nucleic corresponding to road ion beam and hydrogen helium, this is the prerequisite that measurement can be carried out accurately.
Differential scattering is a target atom scatters to the unit solid angle in scatteringangleθ direction by an incoming particle
Probability.When the effect between incoming particle and target nucleus only has coulomb to act on, differential scattering now meets rutherford and dissipates
Cross-Section Formula is penetrated, section now can be calculated by formula；But when the energy ratio of incoming particle is relatively low or compares high, now
Effect between the two will be not only coulomb effect, and the shielding action of electron outside nucleus or nuclear force effect will have a significant impact, now
Differential scattering will greatly deviate from Rutherford scattering section, this phenomenon for target nucleus be light element such as hydrogen helium isotope etc.
It is especially pronounced.Now need that scattering of the specific incoming particle to specific target nucleus in certain energy range section is determined by experiment
Face.
Measure non-rutherford's differential scattering and generally use below equation：
(1.1)
Wherein, the scattering particles number that A is detected for detector, Q is incoming particle number, and N is the target atom in unit area sample
Number,It is energyCorresponding average differential scattering, Ω is then that detector opens solid angle,It is the spy of detector
Survey efficiency.
By formula（1.1）Understand, for the film target of known light element content, by measuring certain in back scattering power spectrum
Element peak area counts A, incoming particle number Q, with reference to detector to the solid angle Ω of target, the detection efficient of detectorAnd target
Atom surface density N, you can try to achieve corresponding differential scattering.But in actual measurement process, among these
Each parameter establishes a capital the larger error of meeting producing ratio really, and the wherein determination of peak area counts A generally has 3% or so system
Meter error；And the determination conventional method of incoming particle number Q uses the methods such as Faraday cup, this kind of method then to exist 5% or so
Error；The determination of detector solid angle Ω there is also the error of 2%-5%；Determine the detection efficient of detectorThe error brought
Typically smaller than 1%, in addition it is negligible.The relative manner used during some section gauges, can eliminate what Ω and Q caused
Error.
However, the accurate determination of the atomic density N for hydrogen or helium isotope in target is a problem, it will usually bring compared with
Big error.The determination of current atom density N typically has following several method：(1) injected using H the or He particles of fixed dosage
Sample, the dosage at this moment injecting will not reach very high, therefore counting rate is than relatively low, the influence of Electronics noice and background radiation
Larger, the N errors for thereby resulting in are 5% or so；(2) using the organic material for having fixed proportion hydrogen isotope ratio, but in measurement
During can make chemical bond rupture because of the bombardment of high energy particle, component ratio is destroyed to cause error, and error now can reach
To 5% ~ 8%.(3) use having does hot release experiment to the part in sample and determines hydrogen helium isotope content therein, this
Method has requirement higher to environment vacuum and instrument quantitative, and error is larger in the dosing process, sometimes even over
6%；(4) surface density is determined also by the method for nuclear reaction analysis, this method inherently has statistical error and core
Reaction cross-section error etc., generally total error is also 5% or so.To sum up, it is conservative to estimate if all parameters all experimentally determine
Meter, then the overall error of section gauge result also can be more than 8%.
Additionally, in order to atomic nucleus in accurate measurement incoming particle beam and the nuclear scattering cross-section of hydrogen helium, pair cross-section measurement
Target material used also has strict requirements：（1）It is necessary to have hydrogen or helium content as high as possible in target, this is to improve
Detection efficient reduces the influence to certainty of measurement such as Electronics noice, cosmic background simultaneously；（2）Hydrogen or helium in target contain
Amount will be stablized as far as possible, it is impossible to which the increase with time of measuring has large change；（3）Ensureing that target material has certain hydrogen or helium
During content, target is as thin as possible relative to incoming particle, to reduce the measurement error that particle energy loss in target causes.
A variety of problems in hydrogen helium isotope nuclear cross section measurement process and challenging bring very big to the accurate measurement in section
Puzzlement so that measurement error that the different measuring method in same section is brought greatly, between some measurement results even more than
100% difference, this further applies the content of hydrogen helium isotope to ion beam analysis and depth profile measurement is caused seriously
Obstruction.
The content of the invention
The problem present in the measurement of the light element such as hydrogen helium isotope nuclear scattering cross-section based on more than, the present invention provides a kind of
The error in measurement process can be effectively reduced, the side of the measurement hydrogen helium isotope nuclear scattering cross-section of certainty of measurement is greatly improved
Method.
The method of the measurement hydrogen helium isotope nuclear scattering cross-section that the present invention is provided, concretely comprises the following steps：
The preparation of step one, hydrogen helium isotope nuclear cross section measurement target, specifically using magnetron sputtering deposition（Include simultaneously
Rf magnetron sputtering and magnetically controlled DC sputtering）A kind of new Film laminated target of method system, the composition of composition target mainly wraps
Containing three parts：Film-substrate, the film layer rich in tested secondary element and it is covered in covering on the film rich in tested secondary element
Cap rock.
The film-substrate, for the measurement in scattering of proton section, uses transmission of the thickness between 1 μm ~ 5 μm thin
Metal substrate, and can use thicker for the measurement of elastic recoil scattering section（Thickness can be in more than 0.5mm）Smooth flat lining
Bottom, such as monocrystalline substrate, signle crystal alumina substrate etc..
The film layer rich in tested secondary element, such as metal hydride, deuteride, film containing helium, thickness range
15nm~35nm。
1. device is obtained using ultrahigh vacuum（Molecular pump system etc.）, by vacuumizing and high-temperature baking, it is better than
The film preparation vacuum condition of 1.0 × 10-4Pa；
2. in film layer preparation process, first according to the requirement for preparing sample, regulation is passed through the sputtering work in vacuum chamber
Flow-rate ratio between gas Ar and target deposition element H, D, He etc..
If deposition H element, the flow-rate ratio of Ar and H2 is 1:It is between 8 ~ 15, i.e., corresponding when Ar flows are 2.0sccm
H2 flows are adjusted according to the difference of hydride corresponding element in the range of 16.0sccm to 30.0sccm；If deposition of elements is
D, then the flow-rate ratio of Ar and D2 is 1:Between 5 ~ 20, i.e., when Ar flows are 2.0sccm, corresponding D2 flows are according to deuteride correspondence
The difference of element, adjusts in the range of 10.0sccm to 40.0sccm；When needing to deposit in the film He elements, corresponding Ar
With the flow-rate ratio of He 1:Between 10 ~ 25, when even Ar flows are 2.0sccm, corresponding He flows contain according to deposition He elements
Desired difference is measured, is adjusted in the range of 20.0sccm to 50.0sccm.
Then the operating pressure of magnetron sputtering is adjusted（Adjusted generally between 0.1Pa ~ 10Pa）, working bias voltage（Generally-
Adjusted in the range of 30V ~ -100V）, sputtering power（Adjusted generally in the range of 60W ~ 120W）, sedimentation time（According to deposition of elements
Difference, sedimentation time is in the range of 3min ~ 30min）.
The coating, deposition is covered on the film rich in tested secondary element.The coating generally selects heavy metal
Element material such as palladium, tantalum etc., thickness range 2nm ~ 8nm, the difference of species and sputtering power according to element, sedimentation time exist
Adjusted in the range of 10s ~ 100s.This layer of coating can not only effectively prevent tested secondary element in preservation and measurement process from film
Middle desorption, and can play a part of in measurement process to incoming particle Dose calibration.
Step 2, nuclear scattering cross-section measurement, using relative measurement, specifically, assume initially that a sample by treating
Survey certain element X of scattering section and the matrix element Y compositions of another weight, heavy element Y to the scattering section of light incident ion this
When be believed that to be rutherford section, thus Y can be used as reference element.The peak area of the backscattering spectrum of X, Y is respectively：
(1.2)
(1.3)
It is divided by respectively and obtains in two formula equation both sides：
（1.4）
Wherein, AXAnd AYBe respectively detector detect corresponding to X element and the population of Y element, Q be incoming particle sum
The corresponding quantity of electric charge, Ω is the solid angle of detector,The scattering section that Y element is acted on incoming particle,N X It is X units
Target atom number in primitive unit cell area sample,N Y It is the target atom number in Y element unit area sample.According to（1.4）Formula：
In measurement, first have to be calculated, can be accurately calculated by Rutherford scattering Cross-Section Formula；
Then according to the recoil particle power spectrum obtained in measurement process（ERDA）Determine NX, by the existing scattering section of presence selected
Measurement data and its nuclear scattering cross-section and Rutherford scattering section are very close in certain energy range another kind is incident
Particle（C ions or O ions of certain energy etc. are selected generally according to different situations）The elastic recoil power spectrum obtained with X effects
And obtained by digital simulation（He for example at 30 degree of angles of measurement bombards H in 1.6MeV to 6.0MeV energy ranges
During elastic recoil scattering section, in order to the H content prepared in sample is determined in advance, we by consulting existing experimental data,
And compared with the calculated value of Rutherford scattering section, find when with the C Ions Bombardment targets containing H element of 4.5MeV, both core
The experimental measurements of scattering section are sufficiently close to Rutherford scattering section, and error is less than 2.0%, and then, we just pass through
The C ions of 4.5MeV determine to prepare the H content in sample, that is, determine NXValue）；
Subsequently determine N according in rutherford back scattering analysis RBS power spectrumsY, because Y element is superheavy element, thus with it is lighter
Incoming particle phase separation when its scattering section it is believed that identical with Rutherford scattering section, accordingly can be by its back scattering energy
Spectrum is calculated NY, the N for determining by this methodYError generally only has the influence of statistical error.
It is determined that above after each experiment parameter, you can accurately drawn according to Cross-Section Formula in the certain energy in special angle position
In the range of differential scattering.
This relative measurement method avoids the error caused in incident ion number Q, solid angle Ω measurement process so that
Measuring accuracy can be greatly improved.
Brief description of the drawings
Fig. 1 is 2.0MeV4The Rutherford backscattering power spectrum of He.
Fig. 2 is 2.0MeV4The elastic recoil power spectrum of He.
Specific embodiment
The specific embodiment of target production technique：The vacuum that magnetron sputtered vacuum chamber passes through the combinations such as molecular pump and ionic pump
Acquisition system, with reference to the mode of high-temperature baking, obtains being better than 5 × 10-5The ultrahigh vacuum of Pa, then, to being passed through work in chamber
Gas and sputter gas, hereafter, are being connected with hybrid working gas Ar and H2Or D2Or cathode targets and sun in the vacuum chamber of He
Certain discharge voltage is added between the substrate of pole（For magnetically controlled DC sputtering, discharge voltage is right generally between 280V to 450V
In rf magnetron sputtering, discharge voltage is generally between 500V to 1000V）When, gas discharge will be produced.Work in plasma
Make gas ion or ion cluster and bombard target in the presence of the electric field of cathodic region.The sputtering yield of known Ar is much larger than H2, D2, He
Deng, therefore, the sedimentation rate of metal film is mainly controlled by Ar ion streams, and this control is mainly reflected on sputtering power, i.e.,
The film thickness that deposition is obtained can be accurately controlled by condition sputtering power and sedimentation time.
It is introduced into the H in film2Or D2Or the content of He is mainly by adjusting the object gas element in mixed gas with sputtering
The flow-rate ratio of vector gas Ar, meanwhile, this content can also be limited by metal property in itself.Such as deposit the hydrogen of transition metal Ti
Compound film, under conditions of other Deposition Parameters are certain, by adjusting H2From 0 to 15, i.e. Ar flows are /Ar flow-rate ratios
During 2.0sccm, corresponding H2Flow is adjusted between 0sccm to 30sccm, accordingly containing H amount change can from 0 to 150at.% with
On；Same principle, in deposited deuterated titanium film, under conditions of other Deposition Parameters are certain, by adjusting D2/ Ar flow-rate ratios
From 0 ~ 20, i.e. Ar flows be 2.0sccm when, corresponding D2Flow is adjusted in the range of 0sccm to 40.0sccm, accordingly containing D
Amount change, for deposition sample containing He, using ZrCo or LaNiAlMn as storage He materials, can pass through from 0 to more than 160at.%
Regulation He/Ar flow-rate ratios from 0 to 25, i.e. Ar flows be 2.0sccm when, corresponding He flows be 0 ~ 50.0sccm, it is corresponding to contain
He amount changes can be from 0 to 50% or so.Additionally, H2Or D2Or the content size of He is also inclined with sputtering voltage, sputtering total pressure, work
The factors such as pressure, sputtering power, sedimentation time and substrate temperature are relevant.Sputtering voltage controlIt is attached
Closely, wherein,It is displacement energy,m、MThe respectively quality of He atoms and membrane material atom.It is logical
Overregulate the sputtering total pressure of magnetron sputtering（Adjusted generally between 0.1Pa ~ 10Pa）, working bias voltage（Generally -30V ~ -
Adjusted in the range of 100V）, sputtering power（Adjusted generally in the range of 60W ~ 120W）, sedimentation time（According to deposition of elements not
Together, sedimentation time is in the range of 3min ~ 15min）, substrate temperature is generally certain with gas content into negative correlation, i.e. other specification
Under conditions of, substrate temperature is higher, and the hydrogen or helium isotope content in the film of deposition are lower, therefore, to be use up in deposition process
Amount reduces substrate temperature, to obtain constituent content to be measured higher.
Specifically operating process is：Deposition substrate etc. is cleaned with ultrasonic cleaning apparatus in advance, then in magnetron sputtering
Sputtering target is put into vacuum chamber（Such as Ti）, while be put into as the sputtering target of protective layer, and film substrate.When sputtering is true
Background pressure in empty room reaches<5×10-5During the vacuum of Pa, be passed through certain flow than target deposition gas such as H2、D2Or
The mixed gas of He and working gas Ar, regulation chamber inner pressure reaches by force more than 2.0Pa, is now allowed to produce plus voltage in negative electrode
The glow discharge of raw stabilization, pre-sputtering is for a period of time.Then pressure in vacuum chamber to working condition is turned down（Generally exist
Adjusted between 0.1Pa ~ 10Pa）Then baffle plate is being opened, in deposition on substrate film.The thickness of film can by sputtering power, when
Between control precise control.For example, using Ti metallic targets, on si substrates, H2/ Ar gas flow ratios are 20, and sputtering power is
100W, when the time is 5min, can obtain film thickness about 30nm, and the amount containing H is the TiHx film samples of 120 at.%.Equally,
Adjustment sputtering power and time can obtain thinner on TiHx films（＜ 3nm）Diaphragm.
Relative measurement：The Film laminated target that will be prepared is positioned in ion beam analysis vacuum chamber to be surveyed for section
Amount, before formal measurement nuclear scattering cross-section, it would be desirable to determine the target atom number N in unit area sampleX, usually use
The existing scattering section measurement data of selected presence and in certain energy range its nuclear scattering cross-section and Rutherford scattering cut
Another incoming particle that face is very close to（C ions or O ions of certain energy etc. are selected generally according to different situations）With X
The elastic recoil power spectrum that obtains of effect is by digital simulation and with being obtained after software spectrum unscrambling；It is determined that target in unit area sample
Atomicity NXAfterwards, we start the measurement of nuclear scattering cross-section, in measurement process, usually utilize gold silicon noodles in an angle
While detector measurement elastic recoil power spectrum, rutherford's back of the body is measured simultaneously using gold silicon noodles detector at another angle
Scattering energy spectrum, then according to formula（1.4）, using the peak area of Y in the Rutherford backscattering power spectrum that experiment is measured, elastic recoil
The peak area of X in power spectrum, and the N that experiment is measuredXAnd NYValue, and be calculated, each correspondence can be obtained
Scattering section under energy。
For example：It is incident at 30 degree of measurement4He ion beams energy range be 1.6MeV to 6.0MeV and1The bullet of H effects
Property recoil scattering section when, we use Ta/TiHx/Si targets, i.e., on a si substrate by magnetically controlled sputter method plating one layer
The TiHx films of 30nm or so, the Ta films of one layer of 7nm or so are hereafter plated on TiHx foamed films again as protective layer and
Reference element layer.Wherein,4It is public that He meets Rutherford scattering section with backscattering sections of the Ta in the range of 1.6MeV to 6.0MeV
Formula, by calculating and can obtain formula (1.4) in。
Before the measurement of elastic recoil scattering section, we first detect the H content in sample with the C of 4.5MeV, by experiment
The result of section gauge is compared with the result of calculation in Rutherford backscattering section, when the energy of incident C is 4.5MeV, C and H's
Elastic recoil section is sufficiently close to the checkout result in Rutherford scattering section（Error is less than 2.0%）, therefore can with this method
Accurately to determine the H content in sample, experiment is measured wherein1The atomic ratio of H and Ti is more than 1.5:1.
During elastic recoil section gauge, we are in 165 degree of directions and 30 degree of directions while measuring Lu of sample
Plucked instrument good fortune back scattering power spectrum and elastic recoil power spectrum, obtain two power spectrums such as Fig. 1 and Fig. 2, and we can from the RBS power spectrums of Fig. 1
To obtain the A in formula (1.4)YAnd NY, in combination with Fig. 1 RBS power spectrums with before 4.5MeV C elastic recoils power spectrum we
Nx can be obtained, we can obtain Ax from the ERD power spectrums of Fig. 2, and then we can obtain different-energy using formula (1.4)
It is corresponding4He with1The elastic recoil scattering section of H.
Measurement result part about hydrogen helium isotope nuclear scattering cross-section has been published in Nuclear Instruments and
On Methods in Physics Research B, such as NIM B 335 (2014) 85-88, NIM B 346 (2015) 17-
20, NIM B 375 (2016) 13-16 etc., the experimental error total for H-He elastic recoil section gauges is less than 5.2%.Compare
In the measurement error more than 7.9% using conventional method, other section gauge results also significantly reduce measurement error, measure
Precision improves a lot.
Claims (4)
1. a kind of method for measuring hydrogen helium isotope nuclear scattering cross-section, it is characterised in that concretely comprise the following steps：
The preparation of step one, hydrogen helium isotope nuclear cross section measurement target,
Film laminated target is prepared using the method for magnetron sputtering deposition, the composition of composition target mainly includes three parts：Film-substrate,
Film layer and the coating being covered on the film rich in tested secondary element rich in tested secondary element；
Step 2, nuclear scattering cross-section measurement, using relative measurement,
Assume initially that a sample is made up of the matrix element Y of certain element X of scattering section to be measured and another weight, heavy element Y pairs
The scattering section of light incident ion is now believed that to be rutherford section, and thus Y is used as reference element；The backscattering spectrum of X, Y
Peak area is respectively：
(1.2)
(1.3)
It is divided by respectively and obtains in two formula equation both sides：
（1.4）
Wherein, AXAnd AYBe respectively detector detect corresponding to X element and the population of Y element, Q be incoming particle sum
The corresponding quantity of electric charge, Ω is the solid angle of detector,The scattering section that Y element is acted on incoming particle,N X It is X element
Target atom number in unit area sample,N Y It is the target atom number in Y element unit area sample；According to（1.4）Formula：
First, calculate, accurately it is calculated by Rutherford scattering Cross-Section Formula；
Then, according to the recoil particle power spectrum obtained in measurement process（ERDA）Determine NX, by the existing scattering section of presence selected
Measurement data and its nuclear scattering cross-section and Rutherford scattering section are very close in certain energy range another kind is incident
Elastic recoil power spectrum that particle and X effect are obtained simultaneously is obtained by digital simulation；
Then, N is determined according in rutherford back scattering analysis RBS power spectrumsY, because Y element is superheavy element, thus with it is lighter
Its scattering section, accordingly can be by its back scattering power spectrum it is believed that identical with Rutherford scattering section during incoming particle phase separation
It is calculated NY。
2. the method for measurement hydrogen helium isotope nuclear scattering cross-section according to claim 1, it is characterised in that the film lining
Bottom, for the measurement in scattering of proton section, the thin metal substrate of transmission using thickness between 1 μm ~ 5 μm, and it is anti-for elasticity
Break up and penetrate the smooth flat substrate that section gauge uses thickness in more than 0.5mm.
3. the method for measurement hydrogen helium isotope nuclear scattering cross-section according to claim 2, it is characterised in that described rich in quilt
Measure the film layer of element, thickness range 15nm ~ 35nm；Its preparation process is：
Device is obtained using ultrahigh vacuum, by vacuumizing and high-temperature baking, acquisition is better than the film preparation of 1.0 × 10-4Pa
Vacuum condition；
During preparation, first according to the requirement for preparing sample, the sputtering working gas Ar that regulation is passed through in vacuum chamber sinks with target
Flow-rate ratio between product element H, D, He：
For deposition H element, the flow-rate ratio of Ar and H2 is 1:Between 8 ~ 15；
For deposition D elements, the flow-rate ratio of Ar and D2 is 1:Between 5 ~ 20；
For deposition He elements, the flow-rate ratio of Ar and He is 1:Between 10 ~ 25；
Then the operating pressure of regulation magnetron sputtering is 0.1Pa ~ 10Pa, and working bias voltage is -30V ~ -100V, and sputtering power is 60W
~ 120W, sedimentation time is 3min ~ 30min.
4. the method for measurement hydrogen helium isotope nuclear scattering cross-section according to claim 3, it is characterised in that the covering
Layer, from heavy metal element material, thickness is 2nm ~ 8nm, the difference of species and sputtering power according to element, sedimentation time
Adjusted in the range of 10s ~ 100s.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110045411A (en) * | 2019-04-09 | 2019-07-23 | 中国科学院合肥物质科学研究院 | A kind of method of deuterium and tritium depth distribution in measurement solid matter |
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| CN112965097A (en) * | 2021-01-25 | 2021-06-15 | 平顶山学院 | Algorithm for deducting interference of product same as target nuclear reaction in nuclear reaction cross section measurement |
| CN112965097B (en) * | 2021-01-25 | 2024-05-28 | 平顶山学院 | Method for deducting interference of same product as target nuclear reaction in nuclear reaction section measurement |
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