CN1067423C - High-lightness high-distinguishability single-crystal colour projection display bube - Google Patents

High-lightness high-distinguishability single-crystal colour projection display bube Download PDF

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CN1067423C
CN1067423C CN96117603A CN96117603A CN1067423C CN 1067423 C CN1067423 C CN 1067423C CN 96117603 A CN96117603 A CN 96117603A CN 96117603 A CN96117603 A CN 96117603A CN 1067423 C CN1067423 C CN 1067423C
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single crystal
monocrystalline
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screen
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CN1169587A (en
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成建波
杨开愚
铙海波
黄宗林
朱建斌
李军建
陈文斌
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Chengdu Chengdianzhengyuan Technology Co Ltd
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University of Electronic Science and Technology of China
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Abstract

The present invention discloses a single crystal color projection display tube of high brightness and high resolution and manufacture technology. The display screen of the display tube is manufactured by epitaxial technology. An epitaxial single crystal garnet phase fluorescent screen comprises the component: Y<3-x-y-z>CexReyMzAL<5-w>Q<w>O12, wherein the X is not smaller than 0 or larger than 0.1; the Y is not smaller than 0 or larger than 3; the Z is not smaller than 0 or larger than 1; the W is not smaller than 0 or larger than 3; the RE is one or several kinds of rare earth elements except for the Ce; the M is the elements, such as Bi, Cr, etc.; the Q is an element, such as V, Ga, Cr, Sc, etc. The present invention can extend a perfect red, green and blue single crystal fluorescent screen of crystalline perfection on the substrate by a method for selecting different melting material formulas to control the component structure and the lattice parameter of the epitaxial fluorescent screen. The present invention adopts a CRT pipe of a trichromatic single crystal screen and realizes a projection display system with high brightness and high resolution.

Description

High brightness, high resolving power monocrystalline colour projection typotron
The invention belongs to and make colour projection's typotron, particularly the manufacturing technology of luminescent screen wherein.
Window of tube in the colour display tube is key part in the technique of display.The display equipment CRT pipe (cathode tube) that utilization now is very general, its luminescent material is the Powdered fluorescent substance of three looks (red, green, blue) that is deposited on the transparent screen, the display brightness of CRT pipe is decided by the luminous efficiency of fluorescent substance and the height of incident excited electrons beam energy fully, the fluorescent material of present common employing only under lower electron impact power density＜10 4W/m 2, could guarantee certain luminous efficiency, if the incident excitation energy be higher than＞10 4W/m 2The time, light-emitting phosphor efficient can descend rapidly, and this is that the electronics of high projectile energy causes burning of fluorescent material, has restricted the brightness and the life-span of CRT pipe because the thermal characteristics of fluorescent material is relatively poor; For the powder window of tube, the size of luminous spot not only depends on the size of screen bundle spot on the electron beam, and depends on the intergranular scattering of light of fluorescent substance.Screen bundle spot became enough hour on the electron beam when well-designed electron beam gun makes, and the intergranular scattering of light of fluorescent substance is the deciding factor of restriction window of tube limiting resolution.Along with the development of information technology, urgent day by day to the requirement of high brightness, high resolving power demonstration in recent years, the CRT pipe of traditional employing powder screen structure can't satisfy this requirement, is necessary to seek a kind of novel luminescent material.Find single crystal fluorescent material in the research, particularly garnet phase monocrystal fluor has higher luminescence quenching temperature, up to 10 9W/m 2Projectile energy when exciting, its luminous intensity does not have obvious saturated phenomenon, material itself has good thermal characteristics, and to unrestricted or the like the excellent properties of display resolution, it is the ideal material of realizing that high brightness, high resolving power show, therefore become a focus in the luminescent material research field in recent years, below several pieces of documents can embody the progress of this research direction over 30 years:
1.G.Blasse A.Bril is published in " Applied Physics wall bulletin " (Appl.phys.letts) 1967.11 one piece of article rolling up on 53 phases: " the novel fluorescence body Ce of the flying-spot scanner CRT of jaundice light 3+: Y 3Al 5O 12" (A new phosphor for flying spot cathode-ray tubes for yellowemitting Y 3Al 5O 12: Ce 3+) and they 1971 the application US.patent No.3,564,322 " flying-spot scanner CRT pipes " (Cathode-ray tube for flying-spot scanning).Ce in the report 3+: Y 3Al 5O 12Material (Ce-cerium, YAG-yttrium aluminum garnet) is to be the Ce of host lattice with YAG 3+Ion is the wavelength X of luminescence center MaxThe single crystal fluorescent material of=555nm, glow color is yellow-green colour, is not suitable for visual custom, also the green standard of discontented football lottery look display requirement, but it demonstrates the superiority of monocrystalline garnet phase material as fluorescent material fully, and this is found to be follow-up further research and has indicated direction.Then pass through the research experiment in many years of numerous researchers, sum up that available other rare earth element replaced C e makes light emitting ionic on this material foundation, or substitute yttrium (Y in the YAG host lattice with rare earth element and other trivalent element such as gallium (Ga), indium (In), scandium (Sc) or the like 3+), aluminium (Al 3+) crystallographic site, with of the effect of change crystal field, thereby adjust Ce to light emitting ionic 3+The spectral response curve of ionoluminescence, and think that this class garnet phase fluor should have so chemical ingredients:
Y 3-x-yCe xRE yAL 5-wZ wO 12
Wherein Y-yttrium, Ce-cerium, RE-refer to one or more rare earth elements except that Ce
Al-aluminium, Z-refer to Ga, In, Sc trivalent element, O-oxygen
0≤x≤0.1,0≤y≤3,0≤w≤3
X+y≤3 wherein
2.J.M.ROBERTSON Deng the article " Ce in the epitaxy single-crystal garnet layer that on " Philips's research " (philipsjoumal ofresearch) first phases 36 in 1981 volume, delivers 3+The color of ionoluminescence shifts " (Colourshift of the Ce 3+Emission in monocrys-talline epitaxially grown garnetlayers) reported transfer Ce in the article 3+The research of luminosity spectral characteristic, they on the YAG substrate extension Y 1.903Ce 0.008Lu 1.080Al 4.339Ga 0.668O 12Fluorescent layer, its λ Max=538nm is with the λ of Ce:YAG MaxThe spectral response curve of=555nm is compared, and this material has the ideal green spectral response curve, but Ce in this material 3+Ionoluminescence efficiency ratio Ce: the YAG material has descended 40%; At Ce 3+Ionoluminescence is to long wave direction study of metastasis aspect, the Ce of people such as Robertson extension on the YAG substrate 0.010Y 1.507Gd 1.395Al 5.006O 12Fluorescent layer, λ Max=574nm, but Ce 3+Ionoluminescence efficiency ratio Ce: the YAG material has descended 15%, and spectral response curve is also not ideal, and the epitaxial film defective is serious; They are at Y 3Al 3.5Ga 1.5O 12The Ce of extension: Gd on the substrate 3Al 5O 12Film, luminous efficiency approaches Ce: YAG material, λ Max=587nm thinks by suitable filtering, can be used as red fluorescence material, but because Gd 3Al 5O 12Lattice parameter bigger, can't mate with present obtainable substrate material, therefore, above-mentioned epitaxial film has a large amount of facet defectives to produce, quality of forming film is poor; For realizing Ce 3+Ionoluminescence is shifted to the shortwave direction, they on the YAG substrate extension composition be Ce 0.006Lu 2.967Al 3.972Ga 1.025In 0.029O 12Fluorescent screen, but serious be full of cracks defective has appearred in the film, by the visible λ of this material luminous spectrum Max=513nm+405nm is two peak structure, luminous efficiency and Ce: the YAG material is compared the order of magnitude that descended, and can't satisfy the blue requirement that shows.
3.1985 No. 014293 " utilizing the indicating system of high luminous intensity monocrystalline garnet material " (Visual display systemutilizing high luminosity single crystal garnet material) of European patent EP that philtrums such as year Berkstresser George Wayne are asked points out that composition is Y 3-x-y-zCe xTb yRE zAl 5-wX wO 12The monocrystalline garnet phase structure epitaxial film of (wherein Tb-terbium, Al-aluminium, RE-refer to one or more rare earth elements that Tb, Ce are outer, and X-refers to Ga, In, Sc element) is a kind of comparatively ideal green fluorescent material, and has enumerated extension Y on the YAG substrate 1.958Lu 0.93Tb 0.10Ce 0.012Al 4.24Ga 0.76O 12The melt prescription and the processing parameter of film have provided the spectrum synoptic diagram, and as seen its luminescent spectrum is typical Tb 3+, Ce 3+Luminous stack spectral is fit to the green needs that show, but Lu/Ga ≌ 1.22 in the epitaxial film, and ratio is improper to cause between epitaxial film and YAG substrate lattice mismatch serious, and defective is obvious, and quality of forming film is poor.
4.Berkstresser Deng in another part PCT patent WO86/00633 " light-emitting display apparatus " (Luminescent displaydevice) in 1985, pointing out to utilize Bi 3+The Y of (bismuth) ionoluminescence 3-x-yBi xRE yAl 5-zGa zO 12Monocrystalline garnet phase epitaxy layer can be used as a kind of blue emitting phophor.Patent has also specifically provided Y 2.95Bi 0.05Al 5O 12The melt prescription of epitaxial film, the manufacture craft parameter is by visible this material λ of the curve of spectrum of data Max〉=425nm, wavelength are short partially, and luminous efficiency is lower.
Comprehensive above-mentioned document can find to have seen that work reported only is confined to the luminous single crystal phosphor material of certain solid color, these materials still have some deficits on effciency of energy transfer, epitaxial film crystalline network (being epitaxial film and the material coupling at the end), are difficult to realize that high brightness, high-resolution color show.
Purpose of the present invention is in order to overcome the weak point in the monocrystalline demonstration aspect prior art, to realize high brightness, high-resolution color Projection Display.
To achieve these goals, technical scheme of the present invention is: by adopting new melt prescription, epitaxy technique prepares novel monocrystalline garnet phase fluorescent material, reaches from constituent structure and optimizes, and improves the purpose of material property on the crystalline network.
High brightness of the present invention, high resolving power monocrystalline colour projection typotron, consist predominantly of the shell of the modulation, convergence, deflection system, glass or the ceramic material that encourage electron gun (electron beam, ultraviolet light beam etc.), excitation beam and special window of tube, it is characterized in that this window of tube is a single crystal fluorescent material, the single crystal fluorescent material that constitutes this screen has following composition:
Y 3-x-y-zCe xRe yM zAl 5-wQ wO 12
0≤x≤0.1?0≤y≤3?0≤z≤1?0＜w≤3
Wherein: x+y+z≤3, Y (yttrium), Ce (cerium), RE (one or more rare earth elements except that Ce), M (elements such as Cr-chromium, Bi-bismuth); Al (aluminium), Q (elements such as Sc-scandium, Cr-chromium, V-vanadium, Ga-gallium, In-indium); X, y, z, w are mole number.
Also different according to the single crystal fluorescent material composition that the difference formation of the colouration of screen is shielded, can be divided three classes.
One, green single crystal phosphor
The epitaxial film that constitutes green single crystal phosphor has following composition:
Y 3-x-y-zCe xTb yRE zAl 5-w-uQ wV uO 12
0≤x≤0.1 0≤y≤1 0≤z≤2 0≤w＜30＜u≤3 are x+y+z≤3 wherein, x+y＞0, u+w≤3
RE refers to the lanthanide series rare-earth elements except that Ce (cerium), Tb (terbium), and Q refers to Ga (gallium), Sc (scandium) element, and V (vanadium) is a sensitizing agent.
Adopt Ce 3++ Tb 3+The two luminescence center structures of ionic can make material in spectral response curve, improve significantly than the Ce:YAG material on the performances such as effciency of energy transfer, in order further to improve the material luminescent properties, adopt V 3+Ion is as sensitizing agent, the V of excited state 3+Ion energy is to Ce 3+, Tb 3+Ion shifting can make Ce 3+, Tb 3+Ionoluminescence intensity is strengthened greatly.
In the YAG host lattice, use the less Lu of ionic radius 3+, Yb 3+Plasma partly replaces Y 3+Ion is with the bigger Ga of ionic radius 3+, Sc 3+Plasma substitutes part A l 3+Ion changes crystal field to Ce 3+The ionic effect can make Ce 3+The ionoluminescence spectral response curve is more suitable for the green requirement that shows, but the lattice parameter of epitaxial film can change along with different ion incorporations simultaneously, need select the ratio between the various ion components in the controlling diaphragm in order to ensure the lattice match of epitaxial film and substrate, extension Lu on the YAG substrate 3++ Ga 3+(replace RE with Lu in the mentioned component formula, substitute Q with Ga) during the codope film, at this moment the Lu/Ga ratio should remain on about 1.5, can realize excellent lattice matching between epitaxial film and YAG substrate.
Two, red single crystal phosphor
The epitaxial film that constitutes red single crystal has following composition:
Gd 3-x-y-zCe xRE yY zAl 5-w-uQ wV uO 12
0≤x≤0.1 0≤y≤2 0≤z≤2 0≤w＜30＜u≤3 are x+y+z≤3 wherein, x+y＞0, u+w≤3
RE refers to other lanthanide series rare-earth elements except that Gd (gadolinium), Ce (cerium), and Q refers to Cr (chromium) or Ga (gallium) or Sc (scandium) trivalent element, and V (vanadium) is a sensitizing agent.
At Gd 3Al 5O 12In the host lattice of (yttrium aluminum garnet), Ce 3+The residing crystal field of ion is different from YAG host lattice field, Ce 3+Ionoluminescence is shifted to the long wave direction, λ MaxCan reach more than the 590nm, in order to strengthen Ce 3+Ionoluminescence intensity adopts V 3+Ion is made sensitizing agent, simultaneously V 3+Ionic radius is less than Al 3+Ion, but the bigger Gd of counterion radius 3+Ion, suitable Gd/V ratio can guarantee epitaxial film and the good coupling of YAG substrate.
Adopt two luminescence center Cr 3++ Ce 3+Structure can further be improved the material spectrum characteristic, improves effciency of energy transfer.
Three, blue single crystal phosphor
The epitaxial film that constitutes blue single crystal has following composition:
Lu 3-x-y-zCe xRE yY zAl 5-w-uQ wV uO 12
0≤x≤0.1 0≤y≤0.5 0≤z≤2 0≤w＜30＜u≤3 are x+y＞0 wherein, u+w≤3,
RE refers to the lanthanide series rare-earth elements except that Lu (lutetium), Ce (cerium), and Q refers to Ga, Sc, In element, and V is a sensitizing agent.
Luetcium aluminum garnet (Lu 3Al 5O 12) crystal field of host lattice is to Ce 3+The ionic effect can be effectively with Ce 3+Ionoluminescence is shifted to the shortwave direction, λ MaxCan reach about 500nm.
Tb 3+Ionic concn is lower than 1.5 * 10 -2The time, the stimulated radiation transition mainly is 5D 3- 7F attitude, energy are higher than is excited Tb 3+Ion is common 5D 4- 7F attitude (λ ≈ 540nm) transition, luminescent spectrum is in blue wave band, adopts Ce 3++ Tb 3+Two luminescence center structures, can improve the blue color spectrum characteristic of material, improve effciency of energy transfer.Utilize Lu 3+, Ga 3+The ionic radius compensation effect is suitably adjusted the lattice match that the Lu/Ga ratio can realize epitaxial film and substrate effectively.Adopt V 3+Ion can make Ce as sensitizing agent 3+, Tb 3+Ionoluminescence is greatly strengthened.
The preparation of monocrystal epitaxial film is that employing liquid phase epitaxial method on garnet phase substrate is grown.
During making, at first will contain the oxide compound of epitaxial film composition, by the certain melt formula rate and the molten auxiliary agent uniform mixing of a great deal of, more than all batching purity requirement 4N (99.99%), fusing assistant adopts plumbous oxide (PbO), boron oxide (B 2O 3), bismuth oxide (Bi 2O 3), plumbous fluoride (PbF 2) in one or more combination all can.The batching that mixes is contained in the platinum pincers pot, under atmospheric atmosphere, carry out the thermostatically heating refining, temperature is 1250 ℃～1300 ℃, allow the oxide compound that contains garnet phase material composition under the fusing assistant effect, fully melt, form uniform aqueous melt, (supersolubility temperature is generally 10 ℃～50 ℃ then melt to be cooled to hypersaturated state, optimum value is about 30 ℃), stretch in melt Rotating with Uniform with the monocrystalline garnet phase substrate (as YAG) that cleans up behind the rubbing down this moment, can be on substrate the required monocrystalline fluorescent screen of epitaxy one deck.
The present invention is by selecting, in the control melt between various oxide components ratio be implemented in the mix lattice match of (promptly selecting volumetric molar concentration x, the y of each composition in the control epitaxial film, the size of z, w) and epitaxial film and substrate of the selection to epitaxial film in the epitaxial process, thereby epitaxy goes out the good red, green, blue monocrystalline garnet phase fluorescent screen of lattice perfection zero defect luminescent properties on the garnet phase substrate of selection.Adopt the CRT pipe of above-mentioned three look monocrystalline screen, can realize high brightness, high-resolution color projection display system.
Description of drawings:
Fig. 1 Ce 3+: Tb 3+: YLuAlGaO material luminescent spectrum figure
Fig. 2 Ce 3+: Tb 3+: V 3+: YLuAlGaO material luminescent spectrum figure
Fig. 3 Ce 3+: V 3+: GdYAlO material luminescent spectrum figure
Fig. 4 Ce 3+: Cr 3+: V 3+: GdYAlO material luminescent spectrum figure
Fig. 5 Ce 3+: Tb 3+: LuAlGaO material luminescent spectrum figure
Further specify the present invention by embodiment in conjunction with the accompanying drawings:
Embodiment one makes green-emitting phosphor
Melt prescription 1:Y 2O 3Be 10.259 grams; CeO 2Be 3.670 grams; Tb 4O 7It is 0.410 gram; Lu 2O 3Be 8.418 grams; Al 2O 3Be 17.386 grams; Ga 2O 3Be 17.186 grams; B 2O 3Be 31.08 grams; PbO is 1200 grams.
Above-mentioned batching evenly after the fusing, is cooled to 1060 ℃ and can carries out extension,＜111 the orientation diameter is the fluorescent screen that extension has gone out lattice perfection on the YAG substrate of 54mm, composition is Y 2.177Ce 0.014Tb 0.042Lu 0.860Al 4.321Ga 0.582O 12, luminescent spectrum is seen Fig. 1.λ Max=540nm is a kind of ideal green fluorescent material, and test finds that luminous light intensity is 2 times of Ce:YAG material of early stage prepared, and its Lu/Ga=1.48 meets the coupling requirement.
Melt prescription 2:Y 2O 3Be 10.259 grams; CeO 2Be 3.155 grams; Tb 4O 7It is 0.683 gram; Lu 2O 3Be 5.413 grams; Al 2O 3Be 17.387 grams; Ga 2O 3Be 13.067 grams; V 2O 5Be 9.6 grams; B 2O 3Be 31.08 grams; PbO is 1200 grams.
Epitaxial temperature is that 1030 ℃, substrate are＜111〉the orientation diameter reaches the YAG wafer of 54mm, and the epitaxial film composition is Y 2.123Ce 0.017Tb 0.042Lu 0.807Al 4.462Ga 0.546V 0.002O 12, spectrum is seen Fig. 2, brightness measured is not add V 3+1.6 times of the aforementioned fluorescent layer brightness of sensitization, adopt 2 inches projection tubes that this fluor prepares as the CRT tube fluorescent screen under the exciting power of energy up to 50W, effciency of energy transfer is greater than 3.8Lu/w, resolving power can satisfy high brightness, high resolving power display requirement fully greater than 2000 line/inches.
Embodiment two makes red single crystal phosphor
Melt prescription 1:CeO 2Be 4.0 grams; Y 2O 3Be 4.159 grams; Gd 2O 3Be 17.313 grams; Al 2O 3Be 23.58 grams; V 2O 5Be 9.0 grams; B 2O 3Be 29.126 grams; PbO is 1125 grams.
Epitaxial temperature is 1060 ℃, and substrate is for＜111〉the orientation diameter is the YAG wafer of 54mm, epitaxial film composition: Gd 1.740Y 0.969Ce 0.015Al 5.272V 0.002O 12, spectrum is seen Fig. 3, λ Max=590nm, adopt the CRT structure projection tube of this phosphor preparation, under the incident power of 50W, effciency of energy transfer can reach 1.5Lu/W, resolving power is greater than 2000 line/inches, after adopting suitable colour filter (620nm colour filter), can reach coupling, satisfy desirable colored display requirement with aforementioned green pipe.
Melt prescription 2:CeO 2Be 3.2 grams; Y 2O 3Be 3.763 grams; Gd 2O 3Be 15.66 grams; Al 2O 3Be 21.33 grams; V 2O 5Be 9.05 grams; Cr 2O 3Be 26.67 grams; B 2O 3Be 31.07 grams; PbO is 1120 grams.
When epitaxial temperature was 1060 ℃, the fluorescent screen composition of extension was Gd on the YAG substrate 1.782Y 0.894Ce 0.019Al 5.255Cr 0.046V 0.002O 12, spectrogram is seen Fig. 4.
Embodiment three makes blue single crystal phosphor
Melt prescription 1:CeO 2Be 1.25 grams; Tb 4O 7It is 0.042 gram; Lu 2O 3Be 7.725 grams; Y 2O 3It is 0.997 gram; Al 2O 3Be 11.210 grams; Ga 2O 3Be 39.642 grams; B 2O 3Be 29.125 grams; PbO is 1125 grams.
Epitaxial temperature is 1030 ℃, and substrate is for＜111〉the orientation diameter is the monocrystalline YAG of 54mm, the epitaxial film composition is Lu 2.213Y 0.780Ce 0.011Tb 0.011Al 3.613Ga 1.372O 12, spectrum is seen Fig. 5, λ Max≤ 490nm, luminance test show that its luminous intensity reaches the Ce:YAG material of early stage technology, and 2 inches projection tubes that utilize this fluorescent material preparation are when incident power 50W, effciency of energy transfer is greater than 0.5Lu/W, resolving power is higher than 2000 line/inches, for satisfying blue display requirement, can adopt λ MaxThe colour filter of=450nm, filtering its brightness of back can reach the requirement of ideal colour mixture with aforesaid redness, drop shadow green's pipe.
Melt prescription 2:CeO 2Be 2.955 grams; Tb 4O 7It is 0.034 gram; Lu 2O 3Be 8.236 grams; Y 2O 3Be 1.05 grams; Al 2O 3Be 11.771 grams; Ga 2O 3Be 31.833 grams; V 2O 5Be 11.56 grams; B 2O 3Be 29.125 grams; PbO is 1125 grams.
At epitaxial temperature is 1040 ℃, and substrate is for＜111〉the orientation diameter is on the YAG wafer of 54mm, and extension has gone out the flawless fluorescent screen of lattice perfection, and the epitaxial film composition is Lu 2.205Y 0.773Ce 0.018Tb 0.009Al 3.767Ga 1.225V 0.003O 12, its spectrum is similar to Fig. 5, is Ce 3++ Tb 3+Luminous stack spectral structure, luminance test show because V 3+Sensibilized and fluorescent screen in light emitting ionic Ce 3+The increase of concentration, its brightness have reached 2.5 times of the fluorescent screen that adopts 1 preparation of melt prescription.

Claims (7)

1. high brightness, high resolving power monocrystalline colour projection typotron, comprise excitation electron gun, the modulation of excitation beam, convergence, deflection system, the shell of glass or ceramic material and a kind of window of tube that is made of single crystal fluorescent material is characterized in that the used single crystal fluorescent material of green screen has following composition:
Y 3-x-y-z?C ex?T by?RE z?Al 5-w-u?Q w?V u?O 12
0≤x≤0.1 0≤y≤1 0≤z≤2 0≤w＜30＜u≤3 are x+y+z≤3 wherein, x+y＞0, and the lanthanide series rare-earth elements of u+w≤3RE except that referring to Ce, Tb, Q refers to Ga, Sc element, V is a sensitizing agent.
2. high brightness according to claim 1, high resolving power monocrystalline colour projection typotron, when it is characterized in that making green epitaxy single-crystal fluorescent screen, RE is Lu in the epitaxial film composition when adopting YAG to make substrate, when Q was Ga, Lu, Ga mol ratio were 1.5.
3. high brightness, high resolving power monocrystalline colour projection typotron, comprise excitation electron gun, the modulation of excitation beam, convergence, deflection system, the shell of glass or ceramic material and a kind of window of tube that is made of single crystal fluorescent material is characterized in that the used single crystal fluorescent material of red screen has following composition:
Gd 3-x-y-z Ce x RE y Y z Al 5-w-u Q w V u O 12
0≤x≤0.1 0≤y≤2 0≤z≤2 0≤w＜30＜u≤3 are x+y+z≤3 wherein, x+y＞0, and u+w≤3RE refers to the lanthanide series rare-earth elements except that Gd, Ce, and Q refers to Cr, Ga, Sc element, and V is a sensitizing agent.
4. high brightness, high resolving power monocrystalline colour projection typotron, comprise excitation electron gun, the modulation of excitation beam, convergence, deflection system, the shell of glass or ceramic material and a kind of window of tube that is made of single crystal fluorescent material is characterized in that the used single crystal fluorescent material of blue screen has following composition:
Lu 3-x-y-z Ce x RE y Y z Al 5-w-u Q w V u O 12
0≤x≤0.1 0≤y≤0.5 0≤z≤2 0≤w＜30＜u≤3 are x+y＞0 wherein, and u+w≤3RE refers to the lanthanide series rare-earth elements except that Lu, Ce, and Q refers to Ga, Sc, In element, and V is a sensitizing agent.
5. make the method for high brightness, high resolving power monocrystalline colour projection typotron, described typotron comprises excitation electron gun, the modulation of excitation beam, convergence, deflection system, the shell of glass or ceramic material and a kind of window of tube that is made of single crystal fluorescent material is characterized in that adopting liquid phase epitaxial technique used melt prescription of the green monocrystalline fluorescent screen of epitaxy on monocrystalline garnet phase substrate to be: Y 2O 3Be 10.259 grams; CeO 2Be 3.670 grams; Tb 4O 7It is 0.410 gram; Lu 2O 3Be 8.418 grams; Al 2O 3Be 17.386 grams; Ga 2O 3Be 17.186 grams; B 2O 3Be 31.08 grams; PbO is 1200 grams;
Or molten prescription is: Y 2O 3Be 10.259 grams; CeO 2Be 3.155 grams; Tb 4O 7It is 0.683 gram; Lu 2O 3Be 5.413 grams; Al 2O 3Be 17.387 grams; Ga 2O 3Be 13.067 grams; V 2O 5Be 9.6 grams; B 2O 3Be 31.08 grams; PbO is 1200 grams.
6. make the method for high brightness, high resolving power monocrystalline colour projection typotron, described typotron comprises excitation electron gun, the modulation of excitation beam, convergence, deflection system, the shell of glass or ceramic material and a kind of window of tube that is made of single crystal fluorescent material is characterized in that adopting liquid phase epitaxial technique used melt prescription of the red monocrystalline fluorescent screen of epitaxy on monocrystalline garnet phase substrate to be: CeO 2Be 4.0 grams; Y 2O 3Be 4.159 grams; Gd 2O 3Be 17.313 grams; Al 2O 3Be 23.58 grams; V 2O 5Be 9.0 grams; B 2O 3Be 29.126 grams; PbO is 1125 grams;
Or the melt prescription is: CeO 2Be 3.2 grams; Y 2O 3Be 3.763 grams; Gd 2O 3Be 15.66 grams; Al 2O 3Be 21.33 grams; V 2O 5Be 9.05 grams; Cr 2O 3Be 26.67 grams; B 2O 3Be 31.07 grams; PbO is 1120 grams.
7. make the method for high brightness, high resolving power monocrystalline colour projection typotron, described typotron comprises excitation electron gun, the modulation of excitation beam, convergence, deflection system, the shell of glass or ceramic material and a kind of window of tube that is made of single crystal fluorescent material is characterized in that adopting liquid phase epitaxial technique used melt prescription of the blue monocrystalline fluorescent screen of epitaxy on monocrystalline garnet phase substrate to be: CeO 2Be 1.25 grams; Tb 4O 7It is 0.042 gram; Lu 2O 3Be 7.725 grams; Y 2O 3It is 0.997 gram; Al 2O 3Be 11.210 grams; Ga 2O 3Be 39.642 grams; B 2O 3Be 29.125 grams; PbO is 1125 grams;
Or the melt prescription is: CeO 2Be 2.955 grams; Tb 4O 7It is 0.034 gram; Lu 2O 3Be 8.236 grams; Y 2O 3Be 1.05 grams; Al 2O 3Be 11.771 grams; Ga 2O 3Be 31.833 grams; V 2O 5Be 11.56 grams; B 2O 3Be 29.125 grams; PbO is 1125 grams.
CN96117603A 1996-06-28 1996-06-28 High-lightness high-distinguishability single-crystal colour projection display bube Expired - Fee Related CN1067423C (en)

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CN100334185C (en) * 2005-12-09 2007-08-29 天津理工大学 Rare-earth yttrium-aluminium garnet luminous material and its gas-phase preparing method
DE102010021341A1 (en) * 2010-05-22 2011-11-24 Merck Patent Gmbh phosphors
JP5669855B2 (en) * 2010-10-05 2015-02-18 株式会社ネモト・ルミマテリアル Green light emitting phosphor and light emitting device
CN102241982B (en) * 2011-05-20 2014-02-19 电子科技大学 Light-emitting diode (LED) fluorescent powder and preparation method thereof
CN102311734B (en) * 2011-09-23 2013-09-04 辽宁大学 Upconversion UV (ultraviolet) luminescent material of broadband spectral adsorption and application thereof
CN104245883B (en) * 2012-04-24 2017-06-27 株式会社光波 Fluorophor and its manufacture method and light-emitting device
JPWO2015099145A1 (en) * 2013-12-27 2017-03-23 国立大学法人京都大学 Phosphor and method for producing phosphor
CH717559A1 (en) * 2020-06-22 2021-12-30 Brevalor Sarl Translucent afterglow luminescent object and its application.
CN113582679B (en) * 2021-07-26 2023-02-07 江苏师范大学 Fluorescent ceramic with high color rendering index and high thermal stability for white light illumination and preparation method thereof

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