CN106712758A - Control circuit of gating photomultiplier - Google Patents
Control circuit of gating photomultiplier Download PDFInfo
- Publication number
- CN106712758A CN106712758A CN201611129071.7A CN201611129071A CN106712758A CN 106712758 A CN106712758 A CN 106712758A CN 201611129071 A CN201611129071 A CN 201611129071A CN 106712758 A CN106712758 A CN 106712758A
- Authority
- CN
- China
- Prior art keywords
- photomultiplier
- dynode
- control circuit
- resistance
- dyn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a control circuit of a gating photomultiplier. A gating signal is generated by a pulse delay controller by using the photomultiplier gating technology to trigger a gating circuit, only the voltages of a photocathode and previous three multiplication stages of the photomultiplier are controlled, and the gain of the whole photomultiplier is controlled by adjusting the gains from the first to the third multiplication stages. The performance of the gating circuit directly determines the working performance of the photomultiplier, the gating circuit cuts off a certain multiplication stage of the photomultiplier, voltage cannot be applied to the controlled multiplication stage, and the photomultiplier does not work; and during connection, a normal voltage is applied to the controlled multiplication stage, and the photomultiplier works normally. As the level value of a control pulse voltage is not high, the time response is ensured, and the impact generated in a switching process is reduced. By adjusting the on-off and the duration of the gating circuit, the photomultiplier can avoid the strong interference pulses or white light background signals that arrive at first in radiation detection, and thus the effective detection of a weak to-be-detected signal is realized.
Description
Technical field
The present invention relates to photodetection, using technical fields such as spectral technique, spectrum analysis, detection and meterings, specifically relate to
And a kind of control circuit for gating photomultiplier.
Background technology
Photomultiplier is the light pulse detector with very high sensitivity and broad linear range of dynamic measurement.Using spy
Fixed voltage divider arrangement, can be such that it is operated in a certain range of linearity, meet the requirement of general measure.But in some radiation
In the detection occasion of pulse, edge after direct impulse is generally required.Such as in the plasma radiation detection that induced with laser is formed, swash
Photoinduction plasma can send very strong electronics bremstrahlen, and this strong white light background signal can cause that PMT is in non-thread
Proterties state, even if after electronics bremsstrahlung disappears, due to the presence of voltage divider effect, the linear of photomultiplier is also difficult to rapidly
Recover.Now, will be unable to capture the atomic radiation signal of needs.At present, the main method for solving this problem uses light
Switch uses the photomultiplier transit tube assembly with gate control function, but this kind of system price is all costly.
The content of the invention
The invention aims to solve drawbacks described above of the prior art, there is provided a kind of control of gate photomultiplier
Circuit processed so that photomultiplier realizes door operation, by the gate circuit of photomultiplier control to cause photomultiplier from
Detect the influence of sample high light, it is to avoid photomultiplier occurs saturation, contributes to the detection of faint optical signal.
The purpose of the present invention can be reached by adopting the following technical scheme that：
A kind of control circuit for gating photomultiplier, the control circuit includes：Photomultiplier, gating circuit, point
Volt circuit and pulse delay controller, wherein, the photomultiplier include light cathode K, anode P and dynode Dy1, Dy2,
Dy3, Dy4 ..., Dyn, n is the positive integer more than 5,
The gating circuit is connected with the smooth cathode K, described dynode Dy1, Dy2, Dy3 respectively, the gating circuit
By the pulse delay controller output control its be switched on and off, it is to be measured when the gating circuit is closed
The photoelectron number that signal is got on the photocathode K cannot be amplified by described dynode Dy1, Dy2, Dy3, when the gate
When circuit is in open mode, the photoelectron that measured signal is got on the photocathode K is in described dynode Dy1, Dy2, Dy3
Double successively；
The bleeder circuit respectively with the anode P, the dynode Dy4 ..., Dyn be connected, for ensureing the sun
Pole P, the dynode Dy4 ..., Dyn be in steady-working state.
Further, the photomultiplier is end window type or side window type photomultiplier.
Further, the gating circuit includes that FET FETs, the FET FETs have source electrode s ends, leakage
Pole d ends and grid g ends, the source electrode s ends and drain electrode d ends of the FET connect the photocathode K and the dynode respectively
Dy3, the grid g ends of the FET are connected with the output end of the pulse delay controller；
Each via one between the photocathode K, the dynode Dy1, the dynode Dy2 and the dynode Dy3
Individual resistance R1 is connected, and the dynode Dy3 is connected by a resistance R1 with the first voltage-stabilized power supply again.
Further, first voltage-stabilized power supply provides 240V positive voltages and is input to the dynode Dy3.
Further, the bleeder circuit includes some resistance R, some electric capacity C and resistance R0, the resistance R0Resistance is
Four times of the resistance R resistances, the dynode Dy4 ..., between Dyn-1, Dyn each via a resistance R be connected, institute
State dynode Dy4 and also pass through resistance R0Ground connection, each reconnects an electric capacity C between described dynode Dyn, Dyn-1, Dyn-2,
The dynode Dyn is connected by parallel resistance R and electric capacity C with the second voltage-stabilized power supply, and the anode P passes through resistance R and the
Two voltage-stabilized power supplies are connected, and are connected by the resistance R of two series connection between the dynode Dyn and the anode P.
Further, second voltage-stabilized power supply provides 1100V positive voltages and is input to the dynode Dyn and the anode
P。
Further, the control circuit carries out electric current output after the anode P connects electric capacity Cc.
Further, the voltage at the grid g ends of the FET FETs is provided by the pulse delay controller, this electricity
Pressure is referred to as trigger pulse voltage, when the grid g terminal voltages of the FET FETs are 0V, i.e., when without trigger pulse, and the field
Effect pipe FETs conductings, light cathode K and the same current potential of multiplier stage Dy1, Dy2, Dy3, the photoelectricity that measured signal is got on photocathode K
Subnumber mesh cannot be amplified by multiplier stage Dy1, Dy2, Dy3, and the gating circuit is closed；As the FET FETs
Grid g terminal voltages be reduced to -5V, that is, when having trigger pulse, the FET FETs is off, now multiplier stage
Voltage on Dy1, Dy2, Dy3 rises very rapidly up to+60V ,+120V and+180V, the photoelectricity that measured signal is got on photocathode K
Son doubles successively in multiplier stage Dy1, Dy2, Dy3, and the gating circuit is in open mode.
Further, the width and its relative detection pulse signal of the trigger pulse at the grid g ends of the FET
Time delay be adjusted by the pulse delay controller.
The present invention has the following advantages and effect relative to prior art：
1st, photomultiplier employs the mode of connection of positive high voltage in the present invention, and gating circuit need not use optically isolated
Device, designs more simple.
2nd, the present invention can selectively detect pulses of radiation signal by gating circuit, improve the sensitivity of detection.
3rd, the control circuit cost of gate photomultiplier disclosed by the invention is cheap, it is easy to accomplish.
Brief description of the drawings
Fig. 1 is the control circuit theory diagrams of gate photomultiplier disclosed by the invention；
Fig. 2 is the LIBS system schematic based on gate photomultiplier transit；
Fig. 3 is typical experimental result picture；
Wherein, 1--- pulse lasers, 2--- condenser lenses, 3--- samples and mobile platform, 4--- optical diodes, 5---
Pulse delay controller, the collection optical system of 6--- light radiation, 7--- monochromators or spectrometer, 8--- gate photomultiplier transits
Pipe, 9--- data acquisition units, 10--- electronic computers.
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
A part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Embodiment
As shown in figure 1, Fig. 1 is the control circuit theory diagrams of gate photomultiplier disclosed by the invention, can from accompanying drawing
Know, a kind of control circuit of door controlled photomultiplier disclosed in this implementation, in this embodiment, select first three multiplication by stages level
Gated, the control circuit includes：Pulse delay controller, gating circuit, bleeder circuit, by pulse delay controller
Output control gating circuit is switched on and off, and bleeder circuit is constantly in steady-working state.
The gating circuit is by the photocathode K and dynode Dy1 to Dy3 of photomultiplier, 4 resistance R1 and FET
FETs is constituted.Light cathode K and Dy1, connected each via resistance R1 between Dy1 and Dy2, Dy2 and Dy3, K poles ground connection, Dy3
240V positive voltages are accessed by a resistance R1, this voltage can be provided by voltage-stabilized power supply；Again the source electrode s ends of FET and leakage
Pole d ends meet K and Dy3 respectively, and the grid g ends of FET are connected with the output end of pulse delay controller.
The voltage at the grid g ends of FET is provided by pulse delay controller, and this voltage is referred to as trigger pulse voltage, when
Fet gate g terminal voltages are 0V, i.e., when without trigger pulse, FET conducting, and light cathode K is with Dy1, Dy2, Dy3 with electricity
Position, the photoelectron number that measured signal is got on photocathode K cannot be amplified by the first to the 3rd dynode, and gating circuit is in
Closed mode；When fet gate voltage is reduced to -5V, that is, when having trigger pulse, FET is off, now
Voltage on Dy1, Dy2 and Dy3 rises very rapidly up to+60V ,+120V and+180V, the photoelectricity that measured signal is got on photocathode K
Son doubles successively in each dynode, and gating circuit is in open mode.
Above-mentioned bleeder circuit is the circuit of Dy4 to anode P, including photomultiplier anode P and dynode
Dy4 ..., the electric capacity C of the resistance R of Dyn-1, Dyn, 240K and 0.1 μ F, this bleeder circuit and photomultiplier it is conventional just
High voltage supply operating circuit is identical, and dynode Dy4 passes through resistance R0Ground connection.
In whole control process, above-mentioned bleeder circuit can ensure that the Dy4 to anode P of photomultiplier is constantly in stabilization
State, photomultiplier remains at good holding state.
The time delay of the width and its relative detection pulse signal of fet gate (g ends) trigger pulse can be by pulse
Delay controller is adjusted.When without trigger pulse, when gating circuit is closed, photomultiplier is in low gain
State, on anode P no current output；When there is trigger pulse, when gating circuit is in open mode, photomultiplier is in height
The state of gain, forms electric current output on anode P.
By adjusting suitable time delay, the output of high light signal, only exports us when can effectively block detection sample
The faint optical signal of needs.
Below, single-pulse laser induced plasma (LIBS, Laser- are carried out with using gate photomultiplier transit Manifold technology
Induced Breakdown Spectroscopy) as a example by detection, labor gates performance of the photomultiplier in detection.
When atom signals radiation detection is carried out using LIBS, the initial stage that laser induced plasma is formed exists very strong
Continuous background radiation (the mainly bremsstrahlung of electronics), the background signal of this strong white light easily causes photomultiplier
Saturation.And required atomic radiation signal compares that the background radiation signal life-span is longer, if the gain to photomultiplier
Gated so that when having strong tough cause electron radiation, photomultiplier is in low gain state, and sends a telegraph son tough
Radiation is wholly absent, and in the range of the relaxation time of atomic radiation, photomultiplier is in high gain state, appropriate by choosing
Gate trigger signal can effectively reduce the tough cause influence that is caused to atomic radiation signal detection of electron radiation, improve signal with
The ratio between background.Specific detection principle such as Fig. 2.
The first step:Pulse laser 1 sends junior engineering college and focuses on testing sample 3 by condenser lens 2
On produce plasma spark.Sample 3 is ceaselessly mobile to ensure that laser pulse will not repeat to beat in a certain fixed position of sample
On；
Second step:Optical diode 4 produces a pulse signal to go trigger pulse time delay control simultaneously after receiving laser pulse
Device processed 5 and data acquisition unit 9；
3rd step:Pulse delay controller 5 exports a time delay and the adjustable trigger pulse of pulsewidth after being triggered, and is added in
Fet gate on gate photomultiplier 8, controls " Push And Release " of photomultiplier；
4th step:The laser plasma luminous signal of generation is collected into monochromator by the collection optical system 6 of light radiation
Or at the entrance slit of spectrometer 7；
5th step:Gate photomultiplier 8 converts optical signals to electric signal；
6th step:Data acquisition unit 9 sends electronic computer 10 to after the electrical signal collection gate photomultiplier 8
Make data analysis.Electronic computer 10 controls the output wavelength or wave-length coverage of monochromator or spectrometer 7 simultaneously；
7th step:Electronic computer 10 chooses phase of the integrated signal in suitable time range (sampling gate) as signal
To value, the value is corresponding with the concentration of element in sample；
8th step:By contrasting the signal intensity of sample known to testing sample and concentration of element, analysis draws treats test sample
Concentration of element value in product.
As shown in figure 3, aluminium atom radiation signal in the aluminum alloy sample that LIBS system is detected is have recorded,
Detection wavelength is 394.4 nanometers (analysis of line wavelength of aluminium atom).Wherein 1 is the aluminium atom detected using common photomultiplier
Radiation signal time-domain diagram, institute's making alive is 650V on photomultiplier bleeder circuit；2 is to be detected using gate photomultiplier
Aluminium atom radiation signal time-domain diagram, institute's making alive is 1100V on photomultiplier bleeder circuit.Here trigger pulse relative laser
The time delay of pulse is 2.5 μ s, and now white light background signal decays to zero substantially, and the width sets of trigger pulse are 20 μ s.
In the time range of 0-2.5 μ s, gate photomultiplier is because in low gain state, the signal of photomultiplier output is obvious
Weaken, saturation state is in due to strong white light signal so as to avoid photomultiplier, cause nonlinear object, substantially reduce
The intensity of background signal, while institute's making alive can increase to 1100V on photomultiplier bleeder circuit, is normalized
Afterwards, compared to unused gating technology, white light signal rejection ratio can reach 60:1.In the range of 2.5-22.5 μ s, photomultiplier transit
Pipe is in high gain state, and the optical signal of aluminium atom radiation is normally amplified.Therefore the technology of gate is favorably improved each multiplication
The voltage extremely gone up, realizes the amplification to faint optical signal.
In sum, the photomultiplier gating technology that the present invention is used, gate letter is produced using digital delay controller
Number triggering gating circuit, only controls the voltage between photocathode and first three multiplication by stages level of photomultiplier, and if below
The current potential of dry dynode and anode is identical with when not using gating technology, is controlled by adjusting the gain of the first to the 3rd dynode
Make the gain of whole photomultiplier.The performance of gating circuit will directly determine the service behaviour of photomultiplier, gating circuit
The a certain multiplier stage of photomultiplier tube detectors is cut off, controlled multiplier stage can not add voltage, photomultiplier not work
Make；During conducting, controlled multiplier stage adds normal voltage, photomultiplier normal work.Due to controlling the electricity of pulse voltage
Place value is not high, it is ensured that time response and reduce impact formed in switching process.By adjusting opening for gating circuit
Close and the duration, photomultiplier can be made to avoid strong jamming pulse or the white light background signal first reached in radiation detection,
So as to realize effective detection of faint measured signal.
Above-described embodiment is the present invention preferably implementation method, but embodiments of the present invention are not by above-described embodiment
Limitation, it is other it is any without departing from Spirit Essence of the invention and the change, modification, replacement made under principle, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (10)
1. it is a kind of gate photomultiplier control circuit, it is characterised in that the control circuit includes：Photomultiplier, door
Control circuit, bleeder circuit and pulse delay controller, wherein, the photomultiplier includes light cathode K, anode P and multiplication
Pole Dy1, Dy2, Dy3, Dy4 ..., Dyn, n is the positive integer more than 5,
The gating circuit is connected with the smooth cathode K, described dynode Dy1, Dy2, Dy3 respectively, and the gating circuit is by institute
State pulse delay controller output control its be switched on and off, when the gating circuit is closed, measured signal
The photoelectron number got on the photocathode K cannot be amplified by described dynode Dy1, Dy2, Dy3, when the gating circuit
During in open mode, the photoelectron that measured signal is got on the photocathode K in described dynode Dy1, Dy2, Dy3 successively
Multiplication；
The bleeder circuit respectively with the anode P, the dynode Dy4 ..., Dyn be connected, for ensure the anode P,
The dynode Dy4 ..., Dyn be in steady-working state.
2. it is according to claim 1 it is a kind of gate photomultiplier control circuit, it is characterised in that the photomultiplier transit
Manage is end window type or side window type photomultiplier.
3. it is according to claim 1 it is a kind of gate photomultiplier control circuit, it is characterised in that the gating circuit
Including FET FETs, the FET FETs has source electrode s ends, drain electrode d ends and grid g ends, the FET
Source electrode s ends and drain electrode d ends connect the photocathode K and dynode Dy3, the grid g ends of the FET and institute respectively
The output end for stating pulse delay controller is connected；
Each via an electricity between the photocathode K, the dynode Dy1, the dynode Dy2 and the dynode Dy3
Resistance R1 is connected, and the dynode Dy3 is connected by a resistance R1 with the first voltage-stabilized power supply again.
4. it is according to claim 3 it is a kind of gate photomultiplier control circuit, it is characterised in that first voltage stabilizing
Power supply provides 240V positive voltages and is input to the dynode Dy3.
5. it is according to claim 1 it is a kind of gate photomultiplier control circuit, it is characterised in that the bleeder circuit
Including some resistance R, some electric capacity C and resistance R0, the dynode Dy4 ..., between Dyn-1, Dyn each via one
Resistance R is connected, and the dynode Dy4 also passes through resistance R0Ground connection, each connects again between described dynode Dyn, Dyn-1, Dyn-2
Meet electric capacity a C, the dynode Dyn to be connected with the second voltage-stabilized power supply by resistance R and electric capacity C in parallel, the anode P leads to
Cross resistance R to be connected with the second voltage-stabilized power supply, two resistance R phases connected are passed through between the dynode Dyn and the anode P
Even.
6. it is according to claim 5 it is a kind of gate photomultiplier control circuit, it is characterised in that second voltage stabilizing
Power supply provides 1100V positive voltages and is input to the dynode Dyn with the anode P.
7. it is according to claim 1 it is a kind of gate photomultiplier control circuit, it is characterised in that the control circuit
Electric current output is carried out after the anode P connects electric capacity Cc.
8. it is according to claim 3 it is a kind of gate photomultiplier control circuit, it is characterised in that the FET
The voltage at the grid g ends of FETs is provided by the pulse delay controller, and this voltage is referred to as trigger pulse voltage, when field effect
Should the grid g terminal voltages of pipe FETs be 0V, i.e., when without trigger pulse, FET FETs conducting, light cathode K and multiplier stage
The same current potential of Dy1, Dy2, Dy3, the photoelectron number that measured signal is got on photocathode K cannot be by multiplier stage Dy1, Dy2, Dy3
Amplify, the gating circuit is closed；When the grid g terminal voltages of the FET FETs are reduced to -5V, that is, there is triggering
During pulse, the FET FETs is off, now the voltage on multiplier stage Dy1, Dy2, Dy3 rise very rapidly up to+
60V ,+120V and+180V, the photoelectron that measured signal is got on photocathode K double successively in multiplier stage Dy1, Dy2, Dy3,
The gating circuit is in open mode.
9. it is according to claim 3 it is a kind of gate photomultiplier control circuit, it is characterised in that
The time delay of the width and its relative detection pulse signal of the trigger pulse at the grid g ends of the FET is by described
Pulse delay controller is adjusted.
10. it is according to claim 5 it is a kind of gate photomultiplier control circuit, it is characterised in that the resistance R0Resistance
Value is four times of the resistance R resistances.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611129071.7A CN106712758B (en) | 2016-12-09 | 2016-12-09 | Control circuit of gate-controlled photomultiplier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611129071.7A CN106712758B (en) | 2016-12-09 | 2016-12-09 | Control circuit of gate-controlled photomultiplier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106712758A true CN106712758A (en) | 2017-05-24 |
| CN106712758B CN106712758B (en) | 2023-03-21 |
Family
ID=58936689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611129071.7A Active CN106712758B (en) | 2016-12-09 | 2016-12-09 | Control circuit of gate-controlled photomultiplier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106712758B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111162761A (en) * | 2019-12-24 | 2020-05-15 | 新绎健康科技有限公司 | Low-light-level detection method and system for preventing photomultiplier from being damaged by strong light |
| CN111800111A (en) * | 2019-12-24 | 2020-10-20 | 新绎健康科技有限公司 | Method and system for rapidly switching photomultiplier of micro-light detector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2289257Y (en) * | 1996-12-12 | 1998-08-26 | 中国科学院武汉物理与数学研究所 | Photoelectric electron-multiplier tube changeable delay high voltage door controlled switch |
| JP2005207955A (en) * | 2004-01-23 | 2005-08-04 | Hamamatsu Photonics Kk | Circuit for photodetection, and photodetector |
| CN204789987U (en) * | 2015-07-15 | 2015-11-18 | 南京信息工程大学 | Laser radar gate signal generating device |
-
2016
- 2016-12-09 CN CN201611129071.7A patent/CN106712758B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2289257Y (en) * | 1996-12-12 | 1998-08-26 | 中国科学院武汉物理与数学研究所 | Photoelectric electron-multiplier tube changeable delay high voltage door controlled switch |
| JP2005207955A (en) * | 2004-01-23 | 2005-08-04 | Hamamatsu Photonics Kk | Circuit for photodetection, and photodetector |
| CN204789987U (en) * | 2015-07-15 | 2015-11-18 | 南京信息工程大学 | Laser radar gate signal generating device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111162761A (en) * | 2019-12-24 | 2020-05-15 | 新绎健康科技有限公司 | Low-light-level detection method and system for preventing photomultiplier from being damaged by strong light |
| CN111800111A (en) * | 2019-12-24 | 2020-10-20 | 新绎健康科技有限公司 | Method and system for rapidly switching photomultiplier of micro-light detector |
| CN111800111B (en) * | 2019-12-24 | 2024-03-08 | 新绎健康科技有限公司 | Method and system for rapidly switching photomultiplier of micro-light detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106712758B (en) | 2023-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10892149B2 (en) | Optical detectors and methods of using them | |
| US10930480B2 (en) | Ion detectors and methods of using them | |
| US10872751B2 (en) | Detectors and methods of using them | |
| JP2004533611A (en) | High speed variable gain system and control method of the system | |
| Tremsin et al. | Optimization of Timepix count rate capabilities for the applications with a periodic input signal | |
| CN107064111B (en) | High-repetition-frequency laser stripping-spark induced breakdown spectroscopy element analysis system and method | |
| Kaptanoglu | Characterization of the Hamamatsu 8” R5912-MOD photomultiplier tube | |
| WO2019017413A1 (en) | Current detection device and spectrometer using the same | |
| US11417509B2 (en) | Current detection device and spectrometer using ihe same | |
| Bülter | Single-photon counting detectors for the visible range between 300 and 1,000 nm | |
| CN106712758A (en) | Control circuit of gating photomultiplier | |
| CN206272590U (en) | A kind of control circuit for gating photomultiplier | |
| US8624192B2 (en) | System for controlling photomultiplier gain drift and associated method | |
| Mirzoyan et al. | An evaluation of the new compact hybrid photodiodes R7110U-07/40 from Hamamatsu in high-speed light detection mode | |
| Orlov et al. | High-detection efficiency MCP-PMTs with single photon counting capability for LIDAR applications | |
| Duara et al. | Experimental and extraction procedure for the electrical characterisation of silicon photomultiplier detectors | |
| Ma et al. | Study on the time resolution limits of FPMT and SiPM under femtosecond laser | |
| US11646190B2 (en) | Current detection device and spectrometer using the same | |
| Gamal et al. | Silicon photomultiplier timing performance study | |
| Rech et al. | Towards picosecond array detector for single-photon time-resolved multispot parallel analysis | |
| CN109870235B (en) | Optical emission spectrometer, method for operating the same and use thereof | |
| Prata et al. | Performance and behaviour of photomultiplier tubes at cryogenic temperature | |
| Williams et al. | EPICS oscilloscope for time-resolved data acquisition | |
| VYSOČANSKÝ et al. | On some Methods of Suppressing the Parasitic Photoemission of Controlled Grid Photomultipliers | |
| Counting | Time-Correlated Single Photon Counting |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |