CN106711255A - Photoluminescent display panel - Google Patents
Photoluminescent display panel Download PDFInfo
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- CN106711255A CN106711255A CN201611262897.0A CN201611262897A CN106711255A CN 106711255 A CN106711255 A CN 106711255A CN 201611262897 A CN201611262897 A CN 201611262897A CN 106711255 A CN106711255 A CN 106711255A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 230000005684 electric field Effects 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000003086 colorant Substances 0.000 claims abstract description 14
- 238000004020 luminiscence type Methods 0.000 claims description 39
- 230000004888 barrier function Effects 0.000 claims description 24
- 230000008859 change Effects 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 10
- 238000003491 array Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000009738 saturating Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000011159 matrix material Substances 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 9
- 238000005424 photoluminescence Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a photoluminescent display panel, which comprises an array substrate and a backlight light source, wherein the array substrate is divided into a plurality of sub-pixel units arranged in a matrix; each sub-pixel unit is internally provided with a semiconductor light emitting unit, a first transparent electrode and a second transparent electrode; the semiconductor light emitting units of different sub-pixel units emit colored light in different colors under the irradiation of the backlight light source; and a storage capacitor is formed between each first transparent electrode and the corresponding second transparent electrode, the storage capacitor forms an electric field at metal electrodes connected with the first transparent electrode and the second transparent electrode, so that the electric field is applied to the semiconductor light emitting units for modulating light emitting intensity of the colored light in different colors, and the colored light in different colors after modulation is used for displaying images. According to the photoluminescent display panel, the color gamut and color saturability of the display panel are significantly improved, the thickness of the display panel is greatly reduced, and the service life is prolonged when compared with a display panel produced by using organic semiconductor materials.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of luminescence generated by light display panel.
Background technology
With continuing to develop for Display Technique, display device also increasingly diversification.It is widely used at present and exploitation is ground
The two kinds of Display Techniques studied carefully include Thin Film Transistor-LCD (Thin Film Transistor-Liquid Crystal
Display, TFT-LCD) and organic light emitting diode display (Organic Light-Emitting Diode, OLED).
TFT-LCD technologies filter backlight using CF color blocking layers, and control liquid crystal cell come to the backlight after filtering using voltage
Intensity modulation is carried out to realize the display of picture.It is the characteristics of display effect is good and wide because TFT-LCD has low production cost
It is general to be applied on the electronic products such as mobile phone, TV, computer.But, although TFT-LCD display effects are original, but because it is used
Liquid crystal cell and CF color blocking layers, therefore this display is general thicker, and its colour gamut and color saturation are relatively low, have met
Not requirement of the user to display color vividness and display thickness.
Lifting with user to display color vividness demand, while for the limitation of TFT-LCD technologies, many families
Display device production firm develops OLED Display Techniques, and establishes multiple OLED screen curtain production lines.OLED technology is utilized to be had
Machine material makes light-emitting component, and the display of picture is carried out by the luminosity of voltage-regulation light-emitting component.Using OLED
The display device color saturation of fabrication techniques is high, contrast is high and thinner thickness.At present, what OLED technology was present mainly asks
Topic is because the light-emitting component of OLED screen curtain uses organic semiconducting materials making, therefore to cause OLED screen curtain to use
Short life, have impact on Consumer's Experience indirectly.
To sum up, need that a kind of high color saturation, colour gamut high, structure are frivolous and display device of long service life is to solve badly
Certainly above mentioned problem.
The content of the invention
The technical problems to be solved by the invention be need to provide a kind of high color saturation, colour gamut high, structure it is frivolous with
And the display panel of long service life.
In order to solve the above-mentioned technical problem, the invention provides a kind of luminescence generated by light display panel, including：Array base palte with
Back light, it is characterised in that the array base palte is divided into multiple sub-pixel units arranged in arrays, in the sub-pixel list
It is provided with unit：Semiconductor light emitting unit, corresponding to different subpixel unit the semiconductor light emitting unit in back light
Irradiation under send the coloured light of different colours respectively；Transparency electrode, including first transparency electrode and second transparency electrode, first
Storage capacitance is formed between transparency electrode and second transparency electrode, the storage capacitance is transparent with first transparency electrode and second
Electric field is formed with the first connected metal electrode of electrode and the second metal electrode, the electric field action is in the semiconductor light emitting list
Unit is modulated with the luminous intensity of the coloured light to different colours, and the aobvious of picture is carried out using the coloured light of the different colours after modulation
Show.
Preferably, the semiconductor light emitting unit corresponding to different subpixel unit sends according to semiconductor light emitting unit
Coloured light color difference using different band gap photoluminescent semiconductors material.
Preferably, the electric field that storage capacitance is formed at the first metal electrode and the second metal electrode is for one can power transformation
, the variable electric field is corresponding with the grey decision-making that its affiliated sub-pixel unit has in different pictures frame.
Preferably, the change of variable electric field includes the change of electric-field intensity and/or the change of direction of an electric field.
Preferably, the boundary corresponding to each sub-pixel unit on array base palte is provided with scan line and data wire,
Thin film transistor (TFT) is provided with sub-pixel unit, the grid of the thin film transistor (TFT) is connected with the scan line, its source electrode and number
It is connected according to line, used as second metal electrode, public electrode is used as the first metal electrode, above-mentioned first metal electricity for its drain electrode
Pole, the second metal electrode and semiconductor light emitting unit are set with layer, and are formed between the first metal electrode, the second metal electrode
Electric field can act on semiconductor light emitting unit, change data line put on the numerical value of the signal voltage of the second metal electrode with
Change the intensity of formed electric field.
Preferably, at least one of which insulating barrier is provided between first transparency electrode and the second transparency electrode, is being worked as
When forward scan line is closed, formed by above-mentioned at least one of which insulating barrier, first transparency electrode and second transparency electrode
Storage capacitance maintains the intensity of electric field.
Preferably, the boundary corresponding to each sub-pixel unit on array base palte is additionally provided with lightproof unit.
Preferably, lightproof unit is set with the semiconductor light emitting unit with layer.
Preferably, wavelength of the wavelength of back light less than the coloured light of the different colours that semiconductor light emitting unit is sent.
Preferably, CdSe or GaAs is included for sending the semi-conducting material of red light, for sending partly leading for green light
Body material includes CdS, and the semi-conducting material for sending blue light includes ZnS or GaN.
Compared with prior art, the present invention has the advantages that：
Liquid crystal and color blocking are substituted by from the inorganic semiconductor material with photoluminescence property, and using electric field to this
The intensity of inorganic semiconductor luminescence generated by light is modulated to realize that picture shows, considerably improves the colour gamut and color of display panel
Color saturation degree, while greatly reducing the thickness of display panel, compared to the display panel produced using organic semiconducting materials, is made
Extended with the life-span.
Brief description of the drawings
Accompanying drawing is used for providing to the technical scheme of the application or further understanding for prior art, and constitutes specification
A part.Wherein, the accompanying drawing of expression the embodiment of the present application is used to explain the technical side of the application together with embodiments herein
Case, but do not constitute the limitation to technical scheme.
Fig. 1 is the section knot of three adjacent subpixels units of luminescence generated by light display panel according to embodiments of the present invention
Structure schematic diagram；
Fig. 2 is that the cross-section structure of the single sub-pixel unit of luminescence generated by light display panel according to embodiments of the present invention shows
It is intended to；
Fig. 3 is the photoluminescence spectra figure of three kinds of coloured light of red, green, blue；
Fig. 4 be in luminescence generated by light display panel according to embodiments of the present invention semiconductor light emitting unit and storage capacitance etc.
Effect connection diagram；
Fig. 5 is luminescence generated by light display panel sub-pixel unit according to embodiments of the present invention and scan line and data wire
Connection diagram；
Fig. 6 be under different electric-field intensity the inorganic semiconductor material with photoluminescence property glowed it is luminous strong
The schematic diagram of degree.
Specific embodiment
Describe embodiments of the present invention in detail below with reference to drawings and Examples, how the present invention is applied whereby
Technological means solves technical problem, and reaches the implementation process of relevant art effect and can fully understand and implement according to this.This Shen
Each feature that please be in embodiment and embodiment, can be combined with each other under the premise of not colliding, the technical scheme for being formed
Within protection scope of the present invention.
Technology contents of the invention are understood for convenience, and the photoluminescence property to inorganic semiconductor material first is made briefly to be situated between
Continue.Luminescence generated by light refers to that object relies on the irradiation of external light source to obtain energy, so as to produce excited state, ultimately results in object
Luminous phenomenon.The photoluminescent process of inorganic semiconductor material substantially launches three by energy absorption, energy transmission and light
Main Stage.Ultraviolet radioactive, visible ray and infra-red radiation can cause luminescence generated by light phenomenon.Many inorganic semiconductor materials can
Energy is obtained by being irradiated by external light source, so as to be lighted due to being excited.When inorganic semiconductor material possesses following condition
When, the efficiency of its photoluminescent process can be improved, specifically, making the band gap width of inorganic semiconductor material meet the band for setting
Gap width conditions, while these inorganic semiconductor materials should also have the features such as electrical conductivity is big, integrality is good.
The present invention proposes that a kind of photoluminescence property using inorganic semiconductor material carries out the luminescence generated by light that picture shows
Display panel, specifically, the luminescence generated by light display panel includes array base palte and back light.Array base palte has compared with battle array
The same multiple sub-pixel units arranged in arrays of row substrate, are respectively arranged with semiconductor light emitting list in each sub-pixel unit
Unit and transparency electrode.Wherein, semiconductor light emitting unit is made up of above-mentioned inorganic semiconductor material, by being arranged on array base palte one
The irradiation of the back light of side, makes the semiconductor light emitting unit for corresponding to different subpixel unit send different colours (such as red
Color R, green G, blueness B) light, these sub-pixel units constitute basic display matrix.
Transparency electrode is divided into first transparency electrode and second transparency electrode, and further in first transparency electrode and second
A storage capacitance is formed between transparency electrode, makes the storage capacitance in be connected with first transparency electrode and second transparency electrode
Electric field is formed with one metal electrode and the second metal electrode, while making the electric field can act on above-mentioned each semiconductor light emitting list
Unit.It should be noted that described in the present invention act on, being commonly understood by based on those skilled in the art refers to electric field
Electric field line can pass through semiconductor light emitting unit all or part.
Further, the electric field for acting on semiconductor light emitting unit is capable of the coloured light that is sent of double conductor luminescence unit
Luminous intensity is modulated.It should be noted that modulation described in the present invention, the generally reason based on those skilled in the art
Solution, refers to making the luminous intensity of coloured light to become big or diminish to show the process of different brightness.The hair of the coloured light after modulation
Luminous intensity there occurs change, corresponding to the change of the GTG of sub-pixel unit, finally realize the display of picture.
The structure of luminescence generated by light display panel is illustrated below in conjunction with one embodiment of the present of invention.
Fig. 1 is (including right three of luminescence generated by light display panel according to embodiments of the present invention adjacent sub-pixel units
Should be in the part of the back light of each sub-pixel unit) cross-sectional view, Fig. 2 is sub-pixel unit (bag in Fig. 1
Include the part of the back light corresponding to the sub-pixel unit) cross-sectional view.
As shown in figure 1, luminescence generated by light display panel of the invention includes back light 10 and array base palte 11, back light
10 irradiate array base palte from the side of array base palte 11, and the array base palte is divided into multiple sub-pixel lists arranged in arrays
Unit, as shown in Figure 2.
Fig. 2 shows the structure of any one sub-pixel unit in the embodiment of the present invention, including, glass substrate 1101, the
One insulating barrier 1102, the luminescence unit 1103 that inorganic semiconductor material is constituted, the second insulating barrier 1108, the 3rd insulating barrier 1109,
4th insulating barrier 1112, first transparency electrode 1111, second transparency electrode 1113.Layer is provided with electrode with luminescence unit 1103
1104, P-Si layer 1105, the two ends of luminescence unit 1103 are provided with electrode 1106 and public electrode 1107 and lightproof unit
1114.In the 3rd insulating barrier 1109, electrode 1110 is additionally provided with.
Wherein, the first insulating barrier 1102 is arranged on the top of glass substrate 1101, and it is exhausted that luminescence unit 1103 is arranged on first
The top of edge layer 1102, the second insulating barrier 1108 is arranged on the top of the layer at the place of luminescence unit 1103, the 3rd insulating barrier 1109
Be arranged on the top of the second insulating barrier 1108, the 3rd insulating barrier 1109 as display panel flatness layer, from photoresist system
Make.4th insulating barrier 1112 is arranged on the top of the 3rd insulating barrier 1109, wherein the first insulating barrier 1102, the second insulating barrier 1108
The conventional insulating layer material such as SiNx or SiOx can be selected to make with the 4th insulating barrier 1112.
Further, semiconductor light emitting unit 1103 is excited under the irradiation of back light 10, and different face are sent respectively
The coloured light of color, can be feux rouges (R), green glow (G) and blue light (B) in the present embodiment.Sent out according to semiconductor light emitting unit 1103
The difference of the color of the coloured light for going out uses the photoluminescent semiconductors material of different band gap, and these materials can be by II-VI group unit
Element or iii-v element composition.
For example, can be using CdSe or GaAs, for sending green glow half for sending the semi-conducting material of feux rouges
Conductor material can use ZnS or GaN using CdS, the semi-conducting material for sending blue light.It is understood that hair
Go out the inorganic semiconductor material not limited to this of the coloured light of these three, be made up of II-VI group or iii-v element and the photic hair of energy
Light produces the material of feux rouges, green glow and blue light.
In one embodiment of the invention, back light 10 is sent from wavelength ratio inorganic semiconductor luminescent material
The short light source of the wavelength of coloured light is specifically inspired than semiconductor light emitting unit 1103 as backlight due to the irradiation of light source
Three kinds of wavelength of the coloured light of different colours will be short light source as backlight.For example, from ultraviolet light (UV light) conduct
Back light.
Semiconductor light emitting unit 1103 is excited the spectrum of sent feux rouges, green glow and blue light as schemed by back light 10
Shown in 3, in the coloured light at these three as produced by luminescence generated by light, it is blue light that wavelength is most short, due to the exciting light of luminescence generated by light
The energy in source is greater than the energy of excited radiation light, so the selection light source also shorter than the wavelength of blue light is used as backlight.It is preferred that
, ultraviolet light (UV light) can be used as above-mentioned back light 10, but back light of the invention 10 is not limited to ultraviolet light.
Be can also be seen that in the spectrum of the white light produced by the inorganic semiconductor material based on luminescence generated by light from Fig. 3
The wave spread of the white light produced by inorganic semiconductor luminescence generated by light is very wide, and reaction is visually the purity of white light
High, the three coloured light of very high purity can be combined into wider colour gamut.
Further as shown in Fig. 2 by electrode 1104, electrode 1106, the insulating barrier of electrode 1110, P-Si layer 1105 and second
1108 collectively form a thin-film transistor structure.Wherein, electrode 1110 is the grid of transistor, and electrode 1104 is transistor
Source electrode, electrode 1106 is the drain electrode of transistor, P-Si layers 1105 semiconductor conducting layer as transistor.It should be noted that
Electrode 1106 as transistor drain electrode, also can be used as the second metal electrode of the embodiment of the present invention.Gold selected by each electrode
Category material is identical with the metal material commonly used in the thin film transistor (TFT) of this area.In the present embodiment, semiconductor layer employs low temperature
Polysilicon material layer makes, but this does not constitute limitation of the invention, it is contemplated that a-Si (non-crystalline silicon) technology in actual production
Application it is more ripe, and the technology when larger display screen is made using more, so P-Si layers 1105 also may be used
To use a-Si materials.
In an embodiment of the present invention, first transparency electrode 1111 selects indium tin oxide with second transparency electrode 1113
Material (Indium Tin Oxide, ITO) makes, and by first transparency electrode 1111, second transparency electrode 1113 and is clipped in two
The 4th insulating barrier 1112 between individual transparency electrode constitutes capacitor.As shown in Fig. 2 first transparency electrode 1111 via via with
Public electrode 1107 is connected, and second transparency electrode 1113 is connected via via with the drain electrode 1106 of thin film transistor (TFT).Need
Illustrate, public electrode 1107 can be used as the first metal electrode of the embodiment of the present invention.When (the second metal of drain electrode 1106
Electrode) when being formed with electric field and public electrode 1107 (the first metal electrode) between, it is transparent by first transparency electrode 1111, second
The capacitor that electrode 1113 and the 4th insulating barrier 1112 being clipped between two transparency electrodes are constituted can store drain electrode
Voltage between 1106 and public electrode 1107, now the capacitor is equivalent to storage capacitance, as shown in Figure 4.Cst is represented in figure
Storage capacitance, the storage capacitance after the scan drive circuit of the row is closed, can be maintained in a line sub-pixel unit charging complete
The electric-field intensity at each sub-pixel unit two ends of its correspondence connection, that is, maintain the display of picture.
It should be noted that the insulating barrier between first transparency electrode 1111 and second transparency electrode 1113 can be one
Layer, or multilayer, this is not limited by the present invention.
In another embodiment of the present invention, the scanning on each sub-pixel unit with said structure and display panel
The connection diagram of line and data wire is as shown in Figure 5.
In Figure 5, Gate_N, Gate_N+1, Gate_N+2 are arranged at the boundary of each sub-pixel unit for representing
Each horizontal scanning line, Data_R, Data_G, Data_B are used to represent each column data of the boundary for being arranged at each sub-pixel unit
Line.The grid of the thin film transistor (TFT) being arranged in sub-pixel unit is connected with scan line, and source electrode is connected with data wire, drain electrode with
One pole plate of storage capacitance Cst, i.e., be connected with second transparency electrode 1113.Diode element is according to for sending not homochromy
The luminescence generated by light unit of light is equivalent to be obtained.Display panel in embodiment that the invention will now be described in detail with reference to the accompanying drawings it is worked
Journey.
As shown in figure 1, semiconductor light emitting unit 1103 sends different colours respectively under the irradiation of ultraviolet light (UV light)
Light, then adjusted by applying the electric field of change by semiconductor light emitting unit 1103 different colours for sending light it is luminous
Intensity.
The inorganic semiconductor with photoluminescence property under different electric-field intensity is illustrated by taking red sub-pixel unit as an example
The modulated process of material.As shown in fig. 6, abscissa is the wavelength of the feux rouges produced by luminescence generated by light, ordinate represents that feux rouges is passed through
Luminous intensity after ovennodulation.Curve in figure represents the electric-field intensity institute for increasing successively respectively from minimum peak to peak-peak
The luminous intensity of corresponding light.From fig. 4, it can be seen that being applied to the electric field at the inorganic semiconductor two ends with photoluminescence property
Intensity is higher, then the inorganic semiconductor is stronger through the luminous intensity of the feux rouges produced by luminescence generated by light.
It is understood that also there is above-mentioned property through the luminous luminous intensity of the blue light produced by luminescence generated by light and green light
Matter, repeats no more.
Further, variable electric field is relative with the grey decision-making that its affiliated sub-pixel unit has in different pictures frame
Should, electric-field intensity is adjusted, each sub-pixel unit is shown that the process of different GTGs is as follows respectively：
In the display of a frame picture, the film crystal of every a line is opened line by line by scan line by scan drive circuit
Pipe, to open the charge path of every a line sub-pixel unit.Then, data wire is passed through to drain electrode 1106 from data drive circuit
Apply signal voltage, public electrode 1107 also applies common electric voltage simultaneously, then between drain electrode 1106 and public electrode 1107
Form electric field and will act on semiconductor light emitting unit 1103, by controlling the strong of the corresponding electric field of each sub-pixel unit respectively
Degree, can form and produce corresponding modulating action to the luminous intensity of luminescence generated by light, and the result of modulation is to form different sub- pictures
GTG of the plain unit in same frame picture shows.
Specifically, making the intensity of the electric field for acting on semiconductor light emitting unit 1103 worked as according to its affiliated sub-pixel unit
The grey decision-making having in preceding image frame is set accordingly, that is, cause to be applied to drain electrode 1106 and public electrode 1107
Between GTG of the voltage with sub-pixel unit in an image frame it is corresponding, i.e., drain electrode is applied to by data wire
GTG of the numerical value of the signal voltage on 1106 with sub-pixel unit in an image frame is corresponding.So, when to data
When line applies above-mentioned signal voltage, sub-pixel unit just can show corresponding GTG, complete the display of a frame picture.
In the display of different frame picture, make the intensity of the electric field for acting on semiconductor light emitting unit 1103 according to belonging to it
The grey decision-making that sub-pixel unit has in different pictures frame does respective change, that is, cause to be applied to drain electrode 1106 and public affairs
The GTG of voltage between common electrode 1107 with sub-pixel unit in different pictures frame is corresponding respectively, completes different frame picture
Display.
It should be noted that it is variable in the electric field of luminescence unit 1103 to want guarantee effect, it is not limited to electric-field strength
The change of degree.For example in other embodiments of the invention, can be by the change that changes the direction of electric field to obtain electric field.
Also, it should be noted that according to first transparency electrode 1111, second transparency electrode 1113 and drain electrode 1106
And the annexation between public electrode 1107 understand, first transparency electrode 1111, second transparency electrode 1113 and between
The storage capacitance that insulating barrier 1112 is formed can be used for the electricity for maintaining to be formed between drain electrode 1106 and public electrode 1107
.
In an embodiment of the present invention, the intensity of electric field of inorganic semiconductor material is put on by regulation come to photic hair
The intensity of light is modulated, and then realizes the display of picture.Change sub-pixel unit due to liquid crystal cell structure need not be set
Display GTG, therefore, it is possible to effectively simplify the structure of display device so that the thickness of display device is more frivolous.
In addition, in order to avoid the light that above-mentioned each sub-pixel unit sends is interfered, in the boundary of each sub-pixel unit
Lightproof unit 1114 is additionally provided with, as shown in Figure 1 or 2.Lightproof unit 1114 is set with luminescence unit 1103 with layer, in practice
Can be made using insulating materials.As a result of lightproof unit 1114, it is to avoid phase of the white light before display picture is generated
Mutually interference, and the coloured light very high purity that each sub-pixel unit sends in luminescence generated by light display panel of the invention, compares
TFT-LCD display panels, the color saturation of luminescence generated by light display panel display picture of the invention improves a lot.
In other embodiments of the invention, it is also aobvious there is provided a kind of luminescence generated by light based on above-mentioned luminescence generated by light display panel
Show device, the luminescence generated by light display is made up of above-mentioned display panel, it is readily appreciated that, based on the display panel system in above-described embodiment
Into luminescence generated by light display have that colour gamut is wide, color saturation is high, thickness is low, long service life the features such as.Concrete structure this
Place repeats no more.
Although disclosed herein implementation method as above, described content is only to facilitate understanding the present invention and adopting
Implementation method, is not limited to the present invention.Any those skilled in the art to which this invention pertains, are not departing from this
On the premise of the disclosed spirit and scope of invention, any modification and change can be made in the formal and details implemented,
But scope of patent protection of the invention, must be still defined by the scope of which is defined in the appended claims.
Claims (10)
1. a kind of luminescence generated by light display panel, including array base palte and back light, it is characterised in that the array base palte is drawn
It is divided into multiple sub-pixel units arranged in arrays, is provided with the sub-pixel unit：
Semiconductor light emitting unit, corresponding to the semiconductor light emitting unit of different subpixel unit, in the back light
The coloured light of different colours is sent under irradiation respectively；
Transparency electrode, including first transparency electrode and second transparency electrode, in the first transparency electrode and second transparency electrode
Between be formed with storage capacitance, the storage capacitance is in first for being connected with first transparency electrode and second transparency electrode respectively
Electric field is formed with metal electrode and the second metal electrode, the electric field action is in the semiconductor light emitting unit with to different face
The luminous intensity of the coloured light of color is modulated, and the display of picture is carried out using the coloured light of the different colours after modulation.
2. display panel as claimed in claim 1, it is characterised in that corresponding to the semiconductor hair of different subpixel unit
Light unit, the difference of the color according to its coloured light for sending uses the photoluminescent semiconductors material of different band gap.
3. display panel as claimed in claim 2, it is characterised in that the storage capacitance is in first metal electrode and
The electric field formed at two metal electrodes is a variable electric field, and the variable electric field is with its affiliated sub-pixel unit in different pictures
The grey decision-making having in frame is corresponding.
4. display panel as claimed in claim 3, it is characterised in that the change of the variable electric field includes the change of electric-field intensity
Change and/or the change of direction of an electric field.
5. the display panel as any one of Claims 1-4, it is characterised in that correspond on the array base palte
The boundary of each sub-pixel unit is provided with scan line and data wire, and thin film transistor (TFT) is provided with the sub-pixel unit；
The grid of the thin film transistor (TFT) is connected with the scan line, and its source electrode is connected with the data wire, and its drain electrode is made
It is second metal electrode；
Public electrode is used as first metal electrode；
First metal electrode, second metal electrode are set with the semiconductor light emitting unit with layer, and are formed at institute
State the electric field between the first metal electrode and the second metal electrode and can act on the semiconductor light emitting unit；
The numerical value of the signal voltage for putting on the second metal electrode is changed to change the intensity of formed electric field by data wire.
6. display panel as claimed in claim 5, it is characterised in that in the first transparency electrode and the described second transparent electricity
At least one of which insulating barrier is provided between pole, when the scan line of current line is closed, by least one of which insulating barrier, first saturating
The storage capacitance that prescribed electrode and second transparency electrode are formed maintains the intensity of the electric field.
7. the display panel as any one of Claims 1-4, it is characterised in that correspond on the array base palte
The boundary of each sub-pixel unit is additionally provided with lightproof unit.
8. display panel as claimed in claim 7, it is characterised in that the lightproof unit is same with the semiconductor light emitting unit
Layer is set.
9. the display panel as any one of Claims 1-4, it is characterised in that the wavelength of the back light is less than
The wavelength of the coloured light of the different colours that the semiconductor light emitting unit is sent.
10. display panel as claimed in claim 2, it is characterised in that the semi-conducting material for sending red light includes
CdSe or GaAs, the semi-conducting material for sending green light includes CdS, and the semi-conducting material for sending blue light includes
ZnS or GaN.
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| CN106711255B (en) | 2018-03-30 |
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