CN106711230A - Thin film transistor - Google Patents
Thin film transistor Download PDFInfo
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- CN106711230A CN106711230A CN201710007292.5A CN201710007292A CN106711230A CN 106711230 A CN106711230 A CN 106711230A CN 201710007292 A CN201710007292 A CN 201710007292A CN 106711230 A CN106711230 A CN 106711230A
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- thin film
- film transistor
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- zinc oxide
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- 239000010409 thin film Substances 0.000 title claims abstract description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052709 silver Inorganic materials 0.000 claims abstract description 54
- 239000004332 silver Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 35
- 238000009413 insulation Methods 0.000 claims abstract description 34
- KBEVZHAXWGOKCP-UHFFFAOYSA-N zinc oxygen(2-) tin(4+) Chemical compound [O--].[O--].[O--].[Zn++].[Sn+4] KBEVZHAXWGOKCP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000000137 annealing Methods 0.000 claims abstract description 16
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 24
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 3
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 claims 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000005669 field effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000075 oxide glass Substances 0.000 abstract description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 8
- 239000011787 zinc oxide Substances 0.000 abstract 4
- 230000005684 electric field Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011981 development test Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention discloses a thin film transistor. The thin film transistor comprises a substrate, a gate arranged on the substrate, a grid insulation layer, a source and a drain which are arranged on the substrate and configured to cover the grid, and a silver doping zinc oxide tin-alloy layer. The opposite two sides of the surface of the grid insulation layer are provided with the source and the drain. The silver doping zinc oxide tin-alloy layer is arranged at the surface of the grid insulation layer, and is contacted with the two ends of the source and the drain. The silver doping zinc oxide tin-alloy layer comprises a channel area, and the channel area is located between the source and the drain. The rate of the silver and the zinc oxide tin is 1-2% by weight in silver doping zinc oxide tin-alloy layer. The thin film transistor is mixed with the silver element to facilitate improving the carrier mobility in the electrode of the zinc oxide tin thin film, a ZnSnO-TFT with high field effect mobility can be obtained through adoption of an indium tin oxide glass substrate and the low temperature annealing technology, the production process is simple and the usage life is long.
Description
Technical field
The present invention relates to technical field of electronic components, more particularly to a kind of thin film transistor (TFT).
Background technology
Thin film transistor (TFT) is one of species of field-effect transistor, rough production method be deposited on substrate it is various not
Same film, such as semiconductor active layer, dielectric layer and metal electrode layer.Thin film transistor (TFT) has to the service behaviour of display device
Highly important effect.Thin film transistor (TFT) generally comprises the parts such as grid, drain electrode, source electrode and channel layer, when grid is applied
During with positive voltage, grid voltage produces electric field in gate insulation layer, and power line points to semiconductor surface by gate electrode, and is produced at surface
Raw charge inducing increases with gate voltage, and semiconductor surface will be changed into electron accumulation layer by depletion layer, forms inversion layer and works as
When reaching strong inversion (when reaching cut-in voltage), source just has carrier and works as source-drain voltage by raceway groove between leakage plus voltage
During very little, conducting channel is approximately a constant resistance, and leakage current increases with source-drain voltage and linearly increases；When source-drain voltage is very big
When, it can produce influence to gate voltage so that electric field is gradually weakened by source to drain terminal in gate insulation layer, semiconductor surface transoid
Electronics is gradually reduced by source to drain terminal in layer, and channel resistance increases as source-drain voltage increases, and leakage current increase becomes slow
Slowly, correspondence linear zone is to saturation region transition；When source-drain voltage increases to a certain extent, drain terminal inversion layer thickness is kept to zero, and voltage exists
Increase, device enters saturation region in actual LCD productions, mainly using a-Si：The ON state (being more than cut-in voltage) of HTFT is to picture
Plain capacitor fast charging, the voltage of pixel capacitance is kept using OFF state, so as to realize the unification of quick response and good storage.
Relatively low in traditional non-crystalline silicon mobility, light sensitivity is strong, polycrystalline SiTFT complex process, polycrystalline organic thin film
Body pipe is difficult to overcome low life-span, the weakness of low mobility again.
The content of the invention
The invention aims to solve shortcoming present in prior art, and a kind of thin film transistor (TFT) for proposing.
To achieve these goals, present invention employs following technical scheme：
A kind of thin film transistor (TFT), including substrate, the grid being arranged on substrate, the grid that are arranged on substrate and cover grid
Insulating barrier, source electrode, drain electrode, also including silver doped zinc oxide tin alloy layers, opposite sides is provided with the surface of the gate insulation layer
Source electrode, drain electrode, the silver doped zinc oxide tin alloy layers be arranged on the surface of gate insulation layer and source electrode, drain electrode two ends respectively with
Its contact, the silver doped zinc oxide tin alloy layers include channel region, and channel region is located between source electrode, drain electrode, Ag doping
Silver accounts for the 1-2% of zinc-tin oxide weight in zinc-tin oxide alloy-layer.
Preferably, the grid is indium tin oxide grid.
Preferably, the gate insulation layer is silica membrane.
A kind of preparation method of above-mentioned thin film transistor (TFT), comprises the following steps：
Step 1：The photoetching indium tin oxide grid on substrate；
Step 2：The silicon dioxide gate insulation layer of photoetching cover grid pole on substrate；
Step 3：Silver doped zinc oxide tin alloy layers are formed on silicon dioxide gate insulation layer；
Step 4：Plating source electrode, drain electrode；
Step 5：Process annealing treatment.
Preferably, in the step 3, the silver element in silver doped zinc oxide tin alloy layers will by radio-frequency magnetron sputter method
The mode that silver element is mixed in target mixes zinc-tin oxide film.
Preferably, the process conditions for preparing silver doped zinc oxide tin alloy layers are to be evacuated to 1.9 × 10-4Pa, leads to
Start sputtering after entering to be passed through the argon gas and oxygen mixed gas that volume ratio is 1: 3.
Preferably, in the step 4 by small ion sputter deposit thickness for 100nm metal platinum be used as source electrode,
Drain electrode.
Preferably, in the step 5, the specific method of process annealing treatment is：Sample is put into annealing dress at room temperature
Intensification is postponed, is annealed 20 minutes for 80-100 DEG C in air atmosphere, taken out after natural cooling.
The operation principle of rf magnetron sputtering refer to electronics in the presence of electric field E, it is former with argon during substrate is flown to
Son collides, and its ionization is produced Ar cations and new electronics；New electronics flies to substrate, and Ar ions are under electric field action
Cathode target is flown in acceleration, and with high-energy bombardment target surface, sputters target.In sputtering particle, neutral target atom
Or molecule deposition forms film on substrate, and the secondary electron for producing can be subject to electric field and magnetic fields, produce E (electric field) ×
B (magnetic field) signified direction drift, abbreviation E × B drifts, its movement locus is similar to a cycloid.It is if toroidal magnetic field, then electric
Son just moves in a circle in approximate cycloid form on target surface, and their motion path is not only very long, and is bound in close
In the heating region on target surface, and substantial amounts of Ar is ionized in this region bombard target, it is achieved thereby that high
Sedimentation rate.With the increase of collision frequency, the energy ezpenditure of secondary electron totally, is gradually distance from target surface, and electric field E's
It is eventually deposited on substrate under effect
In the present invention, zinc-tin oxide finds as semiconductor channel layer material through development test, mixes silver element favourable
Carrier mobility in the electrode for improving zinc-tin oxide film, with the increase of incorporation, the electronics of zinc-tin oxide film
Mobility can reach a peak value, then be gradually reduced, best results when silver element accounts for the 1-2% of zinc-tin oxide weight, can reach
10cm2/v/s；Process annealing treatment can reduce the internal flaw of film, to reach the purpose of the quality for improving film；It is another
Aspect can also improve the surface of film so that the contact between film and another layer film or electrode is more preferable, using indium tin
Oxide glass substrate and low temperature annealing process, can obtain the ZnSnO-TFT thin film transistor (TFT)s of high field-effect mobility, produce work
Skill is simple, long service life.
Brief description of the drawings
Fig. 1 is a kind of structural representation of thin film transistor (TFT) proposed by the present invention.
In figure：1 substrate, 2 grids, 3 gate insulation layers, 4 silver doped zinc oxide tin alloy layers, 5 source electrodes, 6 drain electrodes.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.
The rf magnetron sputtering unit type used in the present embodiment is GP-560b type dual chamber magnetron sputtering deposition systems；
The model Yue Loong epoch LJ-16 of small ion sputter；Annealing device model RTP-500 fast heat treatment devices.
First embodiment
Reference picture 1, a kind of thin film transistor (TFT), including substrate 1, be arranged on substrate grid 2, be arranged on substrate and cover
The gate insulation layer 3 of lid grid, source electrode 5, drain electrode 6, also including silver doped zinc oxide tin alloy layers 4, the surface of the gate insulation layer 3
Upper opposite sides is provided with source electrode 5, drain electrode 6, and the silver doped zinc oxide tin alloy layers 4 are arranged on the surface and source of gate insulation layer 3
Pole 5, the two ends of drain electrode 6 are in contact with it respectively, and the silver doped zinc oxide tin alloy layers 4 include channel region, channel region position
Between source electrode 5, drain electrode 6, silver accounts for the 1% of zinc-tin oxide weight in silver doped zinc oxide tin alloy layers 4, and the grid 2 is indium
Tin-oxide grid, the gate insulation layer 3 is silica membrane.
A kind of preparation method of above-mentioned thin film transistor (TFT), comprises the following steps：
Step 1：The photoetching indium tin oxide grid on substrate；
Step 2：The silicon dioxide gate insulation layer of photoetching cover grid pole on substrate；
Step 3：Silver doped zinc oxide tin alloy layers, silver doped zinc oxide tin alloy are formed on silicon dioxide gate insulation layer
Silver element in layer mixes zinc-tin oxide film, technique by way of radio-frequency magnetron sputter method mixes in target silver element
Condition is to be evacuated to 1.9 × 10-4Pa, sputtering is started after being passed through the argon gas and oxygen mixed gas that volume ratio is 1: 3；
Step 4：Plating source electrode, drain electrode, by small ion sputter deposit thickness for 100nm metal platinum be used as source electrode,
Drain electrode；
Step 5：Process annealing is processed, and specific method is：Heated up after sample to be put into annealing device at room temperature, in air
Annealed 20 minutes for 80 DEG C in atmosphere, taken out after natural cooling.
Second embodiment
Reference picture 1, a kind of thin film transistor (TFT), including substrate 1, be arranged on substrate grid 2, be arranged on substrate and cover
The gate insulation layer 3 of lid grid, source electrode 5, drain electrode 6, also including silver doped zinc oxide tin alloy layers 4, the surface of the gate insulation layer 3
Upper opposite sides is provided with source electrode 5, drain electrode 6, and the silver doped zinc oxide tin alloy layers 4 are arranged on the surface and source of gate insulation layer 3
Pole 5, the two ends of drain electrode 6 are in contact with it respectively, and the silver doped zinc oxide tin alloy layers 4 include channel region, channel region position
Between source electrode 5, drain electrode 6, silver accounts for the 1.5% of zinc-tin oxide weight in silver doped zinc oxide tin alloy layers 4, and the grid 2 is
Indium tin oxide grid, the gate insulation layer 3 is silica membrane.
A kind of preparation method of above-mentioned thin film transistor (TFT), comprises the following steps：
Step 1：The photoetching indium tin oxide grid on substrate；
Step 2：The silicon dioxide gate insulation layer of photoetching cover grid pole on substrate；
Step 3：Silver doped zinc oxide tin alloy layers, silver doped zinc oxide tin alloy are formed on silicon dioxide gate insulation layer
Silver element in layer mixes zinc-tin oxide film, technique by way of radio-frequency magnetron sputter method mixes in target silver element
Condition is to be evacuated to 1.9 × 10-4Pa, sputtering is started after being passed through the argon gas and oxygen mixed gas that volume ratio is 1: 3；
Step 4：Plating source electrode, drain electrode, by small ion sputter deposit thickness for 100nm metal platinum be used as source electrode,
Drain electrode；
Step 5：Process annealing is processed, and specific method is：Heated up after sample to be put into annealing device at room temperature, in air
Annealed 20 minutes for 90 DEG C in atmosphere, taken out after natural cooling.
3rd embodiment
Reference picture 1, a kind of thin film transistor (TFT), including substrate 1, be arranged on substrate grid 2, be arranged on substrate and cover
The gate insulation layer 3 of lid grid, source electrode 5, drain electrode 6, also including silver doped zinc oxide tin alloy layers 4, the surface of the gate insulation layer 3
Upper opposite sides is provided with source electrode 5, drain electrode 6, and the silver doped zinc oxide tin alloy layers 4 are arranged on the surface and source of gate insulation layer 3
Pole 5, the two ends of drain electrode 6 are in contact with it respectively, and the silver doped zinc oxide tin alloy layers 4 include channel region, channel region position
Between source electrode 5, drain electrode 6, silver accounts for the 2% of zinc-tin oxide weight in silver doped zinc oxide tin alloy layers 4, and the grid 2 is indium
Tin-oxide grid, the gate insulation layer 3 is silica membrane.
A kind of preparation method of above-mentioned thin film transistor (TFT), comprises the following steps：
Step 1：The photoetching indium tin oxide grid on substrate；
Step 2：The silicon dioxide gate insulation layer of photoetching cover grid pole on substrate；
Step 3：Silver doped zinc oxide tin alloy layers, silver doped zinc oxide tin alloy are formed on silicon dioxide gate insulation layer
Silver element in layer mixes zinc-tin oxide film, technique by way of radio-frequency magnetron sputter method mixes in target silver element
Condition is to be evacuated to 1.9 × 10-4Pa, sputtering is started after being passed through the argon gas and oxygen mixed gas that volume ratio is 1: 3；
Step 4：Plating source electrode, drain electrode, by small ion sputter deposit thickness for 100nm metal platinum be used as source electrode,
Drain electrode；
Step 5：Process annealing is processed, and specific method is：Heated up after sample to be put into annealing device at room temperature, in air
Annealed 20 minutes for 100 DEG C in atmosphere, taken out after natural cooling.
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto,
Any one skilled in the art the invention discloses technical scope in, technology according to the present invention scheme and its
Inventive concept is subject to equivalent or change, should all be included within the scope of the present invention.
Claims (8)
1. a kind of thin film transistor (TFT), including substrate, the grid being arranged on substrate, the grid for being arranged on substrate and covering grid are exhausted
Edge layer, source electrode, drain electrode, it is characterised in that：Also include silver doped zinc oxide tin alloy layers, it is relative on the surface of the gate insulation layer
Both sides are provided with source electrode, drain electrode, and the silver doped zinc oxide tin alloy layers are arranged on the surface of gate insulation layer and source electrode, the two of drain electrode
End is in contact with it respectively, and the silver doped zinc oxide tin alloy layers include channel region, and channel region is located at source electrode, drains it
Between, silver accounts for the 1-2% of zinc-tin oxide weight in silver doped zinc oxide tin alloy layers.
2. a kind of thin film transistor (TFT) according to claim 1, it is characterised in that：The grid is indium tin oxide grid.
3. a kind of thin film transistor (TFT) according to claim 1, it is characterised in that：The gate insulation layer is that silica is thin
Film.
4. the preparation method of a kind of thin film transistor (TFT) according to claim any one of 1-3, it is characterised in that：Including as follows
Step：
Step 1：The photoetching indium tin oxide grid on substrate；
Step 2：The silicon dioxide gate insulation layer of photoetching cover grid pole on substrate；
Step 3：Silver doped zinc oxide tin alloy layers are formed on silicon dioxide gate insulation layer；
Step 4：Plating source electrode, drain electrode；
Step 5：Process annealing treatment.
5. the preparation method of a kind of thin film transistor (TFT) according to claim 4, it is characterised in that：In the step 3, silver is mixed
Silver element in miscellaneous zinc-tin oxide alloy-layer mixes oxygen by way of radio-frequency magnetron sputter method mixes in target silver element
Change zinc-tin film.
6. the preparation method of a kind of thin film transistor (TFT) according to claim 5, it is characterised in that：It is described to prepare Ag doping oxygen
Change the process conditions of Zinc-tin alloy layer to be evacuated to 1.9 × 10-4Pa, the argon gas and oxygen for being passed through volume ratio for 1: 3 is mixed
Start sputtering after closing gas.
7. the preparation method of a kind of thin film transistor (TFT) according to claim 4, it is characterised in that：Pass through in the step 4
Small ion sputter deposit thickness is the metal platinum of 100nm as source electrode, drain electrode.
8. the preparation method of a kind of thin film transistor (TFT) according to claim 4, it is characterised in that：In the step 5, low temperature
The specific method of annealing is：Heated up after sample to be put into annealing device at room temperature, 80-100 DEG C is moved back in air atmosphere
Fire 20 minutes, takes out after natural cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007292.5A CN106711230A (en) | 2017-01-06 | 2017-01-06 | Thin film transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007292.5A CN106711230A (en) | 2017-01-06 | 2017-01-06 | Thin film transistor |
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|---|---|
| CN106711230A true CN106711230A (en) | 2017-05-24 |
Family
ID=58907866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710007292.5A Pending CN106711230A (en) | 2017-01-06 | 2017-01-06 | Thin film transistor |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582453A (en) * | 2008-05-15 | 2009-11-18 | 三星电子株式会社 | Transistor, semiconductor device and method of manufacturing the same |
| CN101621075A (en) * | 2008-06-30 | 2010-01-06 | 三星移动显示器株式会社 | Thin film transistor, method of manufacturing the same and flat panel display device having the same |
| US20110303918A1 (en) * | 2010-06-11 | 2011-12-15 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display and method of manufacturing the same |
| CN104241391A (en) * | 2013-06-21 | 2014-12-24 | 三星显示有限公司 | Thin film transistor |
-
2017
- 2017-01-06 CN CN201710007292.5A patent/CN106711230A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582453A (en) * | 2008-05-15 | 2009-11-18 | 三星电子株式会社 | Transistor, semiconductor device and method of manufacturing the same |
| CN101621075A (en) * | 2008-06-30 | 2010-01-06 | 三星移动显示器株式会社 | Thin film transistor, method of manufacturing the same and flat panel display device having the same |
| US20110303918A1 (en) * | 2010-06-11 | 2011-12-15 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display and method of manufacturing the same |
| CN104241391A (en) * | 2013-06-21 | 2014-12-24 | 三星显示有限公司 | Thin film transistor |
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