CN106685387A - Electronic soft switch - Google Patents
Electronic soft switch Download PDFInfo
- Publication number
- CN106685387A CN106685387A CN201710136657.4A CN201710136657A CN106685387A CN 106685387 A CN106685387 A CN 106685387A CN 201710136657 A CN201710136657 A CN 201710136657A CN 106685387 A CN106685387 A CN 106685387A
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- China
- Prior art keywords
- resistor
- effect transistor
- channel field
- resistance
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 230000005669 field effect Effects 0.000 claims abstract description 41
- 230000000694 effects Effects 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000005611 electricity Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Abstract
The invention discloses an electronic soft switch. The electronic soft switch is very applicable in intelligent terminal equipment powered by a battery. The electronic soft switch comprises a P-channel field-effect transistor, a first N-channel field-effect transistor, a second N-channel field-effect transistor, a button switch, a first resistor, a second resistor and a third resistor, wherein one end of the first resistor and one end of the button switch are respectively connected with a source electrode of the P-channel field-effect transistor; the other end of the first resistor, a drain electrode of the first N-channel field-effect transistor and a drain electrode of the second N-channel field-effect transistor are respectively connected with a grid electrode of the P-channel field-effect transistor; the other end of the button switch and one end of the second resistor are respectively connected with a grid electrode of the second N-channel field-effect transistor; the other end of the second resistor is connected with one end of the third resistor; and a source electrode of the first N-channel field-effect transistor, a source electrode of the second N-channel field-effect transistor and the other end of the third resistor are respectively grounded. The electronic soft switch disclosed by the invention is convenient in use, low in cost and obvious in effect.
Description
Technical field
The present invention relates to soft switch technique field, specially a kind of electronics Sofe Switch.
Background technology
The use of the smart machine of battery is at present increasingly to popularize.It is most common to have MP3 player, mobile phone, panel computer
Deng.We can have found that these equipment are put 1 to 2 months there in use, just shut down at last, and the electricity of battery can also disappear
Consumption totally, cannot directly start shooting, it is necessary to first charge when next time uses.Present smart machine typically all uses lithium polymer battery
Power supply.Although saying that lithium polymer battery has self discharge, fully charged storage in general can also be left at least after 2 years
The electricity of half.So why we equipment deposit 2 months within will deplete batteryReason be these equipment although
There is power knob, can shut down, but do not cut off the current supply circuit of battery after actually shutting down, and be the system that allows
Circuit is operated in deep sleep.General equipment can all have hundreds of microamperes to several milliamperes of current drain after shut down.This
Individual power consumption is the self discharge for being far longer than battery.So battery is depleted quickly after causing shutdown.It will be appreciated that overdischarge
Injury to rechargeable battery is very big, can cause that battery capacity is irreversible to decline to a great extent.Intuitively feel to be exactly that mobile phone is put
Taking out use after half a year again there will think that battery is not durable.
The content of the invention
It is an object of the invention to be directed to above-mentioned the deficiencies in the prior art, there is provided a kind of electronics Sofe Switch.
The technical proposal of the invention is realized in this way:A kind of electronics Sofe Switch, by P-channel field-effect transistor (PEFT) pipe, the first N-channel
FET, the second N-channel FET, button switch, first resistor, second resistance and 3rd resistor composition, described first
The source electrode of resistance one end, button switch one end with P-channel field-effect transistor (PEFT) pipe is connected, the first resistor other end, the first N-channel
The grid of the drain electrode of FET, the drain electrode of the second N-channel FET with P-channel field-effect transistor (PEFT) pipe is connected, the button switch
The grid of the other end, second resistance one end with the second N-channel FET is connected, the second resistance other end and the 3rd electricity
Resistance one end is connected, and the source electrode of the first N-channel FET, the source electrode of the second N-channel FET and 3rd resistor are another
End is grounded.
Preferably, the P-channel field-effect transistor (PEFT) pipe model FDN304P.
Preferably, the first N-channel FET model and the second N-channel FET model are 2SK1590.
Preferably, the first resistor resistance is 100k, and the second resistance resistance is 1k, and the 3rd resistor resistance is
5.1k。
Compared with prior art, the beneficial effects of the invention are as follows:The electronics Sofe Switch is easy to use, with low cost, effect
When significantly, in battery powered intelligent terminal, can effectively disconnect battery and power.
Brief description of the drawings
The present invention is described in further detail for embodiment in below in conjunction with the accompanying drawings, but does not constitute to of the invention
Any limitation.
Fig. 1 is circuit diagram of the present invention.
In figure:Q1, P-channel field-effect transistor (PEFT) pipe;Q2, the first N-channel FET;Q3, the second N-channel FET;S1, press
Button switch;R1, first resistor;R2, second resistance;R3,3rd resistor.
Specific embodiment
Fig. 1 is referred to, the present invention provides a kind of technical scheme:A kind of electronics Sofe Switch, by P-channel field-effect transistor (PEFT) pipe, a N
Channel field-effect pipe, the second N-channel FET, button switch, first resistor, second resistance and 3rd resistor composition, it is described
The source electrode of first resistor one end, button switch one end with P-channel field-effect transistor (PEFT) pipe is connected, the first resistor other end, a N
The grid of the drain electrode of channel field-effect pipe, the drain electrode of the second N-channel FET with P-channel field-effect transistor (PEFT) pipe is connected, the button
Switch grid with the second N-channel FET of the other end, second resistance one end is connected, the second resistance other end and the
Three resistance one end are connected, the source electrode of the first N-channel FET, the source electrode of the second N-channel FET and 3rd resistor
The other end is grounded.The P-channel field-effect transistor (PEFT) pipe model FDN304P.The first N-channel FET model and the 2nd N
Channel field-effect cast number is 2SK1590.The first resistor resistance is 100k, and the second resistance resistance is 1k, described
3rd resistor resistance is 5.1k.
Operation instruction:Button switch one terminates battery, the outside output voltage of drain electrode of P-channel field-effect transistor (PEFT) pipe, second resistance
The external peripheral control unit of the other end, off signal is sent to peripheral control unit, and the grid of the first N-channel FET is external
Peripheral control unit, the off signal that peripheral control unit is sent according to the second resistance other end controls the first N-channel FET
Low and high level at grid.
Operation principle of starting shooting:When equipment is originally in off-mode, P-channel field-effect transistor (PEFT) pipe is off state, P-channel
The drain electrode Non voltage output of FET, the grid of the first N-channel FET is low level, and the output of the second resistance other end is low
Level, button switch is off, and at this moment presses button switch, and the grid of the second N-channel FET is driven high, and second
N-channel FET is turned on, and the grid of P-channel field-effect transistor (PEFT) pipe is pulled low, the conducting of P-channel field-effect transistor (PEFT) pipe, P-channel field-effect transistor (PEFT) pipe
Drain electrode starts external output voltage, and equipment is started working, and after equipment work, peripheral control unit is first the first N-channel field-effect
Level puts height at the grid of pipe, and the first N-channel FET is turned on.First N-channel FET and the second N-channel field-effect
Pipe is parallel relationship, as long as a conducting, the grid of P-channel field-effect transistor (PEFT) pipe will be pulled low, and P-channel field-effect transistor (PEFT) pipe will lead
Logical, at this moment just energy release button is switched, and start process terminates.
Shutdown operation principle:When equipment is originally in open state, P-channel field-effect transistor (PEFT) pipe is in the conduction state, P-channel
The drain electrode output voltage of FET.The grid input high level of the first N-channel FET, second resistance other end output is low
Level, at this moment presses button switch, and second resistance other end output high level is not loosed one's grip if pressing the button switch always, the
The two resistance other ends will always export high level, if we define pins button switch 10 seconds to shut down, then if the
Peripheral control unit is just the grid of the first N-channel FET after the high level of continuous 10 seconds is detected at the two resistance other ends
Low level is disposed, now the grid of the first N-channel FET just becomes low level, and the first N-channel FET just disconnects.If
At this moment release button is switched, then the grid of the second N-channel FET just becomes low level, and the first N-channel FET just breaks
Open.The grid of so P-channel field-effect transistor (PEFT) pipe just becomes high level, and P-channel field-effect transistor (PEFT) pipe just disconnects.The drain electrode of P-channel field-effect transistor (PEFT) pipe
Just without voltage output, device powers down, shutdown process terminates.
It should be further stated that:Peripheral control unit is not belonging to range of structures of the invention, for peripheral control unit such as
Level at the grid of Automatic level control the first N-channel FET what is exported according to the second resistance other end, belongs to outside control
Device internal algorithm problem processed, is not belonging to the scope of the present invention.
Embodiment provided above is better embodiment of the invention, only for the convenient explanation present invention, not to this hair
It is bright to make any formal limitation, any those of ordinary skill in the art, if putting forward skill the present invention is not departed from
In the range of art feature, the local Equivalent embodiments for changing or modifying are made using disclosed technology contents, and not
Depart from technical characteristic content of the invention, still fall within the range of the technology of the present invention feature.
Claims (4)
1. a kind of electronics Sofe Switch, by P-channel field-effect transistor (PEFT) pipe, the first N-channel FET, the second N-channel FET, button
Switch, first resistor, second resistance and 3rd resistor composition, it is characterised in that described first resistor one end, button switch one end
Source electrode with P-channel field-effect transistor (PEFT) pipe is connected, the first resistor other end, the drain electrode of the first N-channel FET, the 2nd N
The grid that channel field-effect pipe drains with P-channel field-effect transistor (PEFT) pipe is connected, and the button switch other end, second resistance one end are equal
Grid with the second N-channel FET is connected, and the second resistance other end is connected with 3rd resistor one end, a N
The source electrode of channel field-effect pipe, the source electrode of the second N-channel FET and the 3rd resistor other end are grounded.
2. a kind of electronics Sofe Switch according to claim 1, it is characterised in that the P-channel field-effect transistor (PEFT) pipe model
FDN304P。
3. a kind of electronics Sofe Switch according to claim 1, it is characterised in that the first N-channel FET model
2SK1590 is with the second N-channel FET model.
4. a kind of electronics Sofe Switch according to claim 1, it is characterised in that the first resistor resistance is 100k, institute
Second resistance resistance is stated for 1k, the 3rd resistor resistance is 5.1k.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710136657.4A CN106685387A (en) | 2017-03-09 | 2017-03-09 | Electronic soft switch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710136657.4A CN106685387A (en) | 2017-03-09 | 2017-03-09 | Electronic soft switch |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106685387A true CN106685387A (en) | 2017-05-17 |
Family
ID=58828566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710136657.4A Pending CN106685387A (en) | 2017-03-09 | 2017-03-09 | Electronic soft switch |
Country Status (1)
Country | Link |
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CN (1) | CN106685387A (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0347998A1 (en) * | 1988-06-24 | 1989-12-27 | Koninklijke Philips Electronics N.V. | Gate circuit |
CN102213993A (en) * | 2010-04-01 | 2011-10-12 | 康佳集团股份有限公司 | Circuit for soft startup and soft shutdown |
CN202772861U (en) * | 2012-08-29 | 2013-03-06 | 四川虹视显示技术有限公司 | Startup and shutdown circuit used in fish finder |
CN204161536U (en) * | 2014-09-26 | 2015-02-18 | 纳恩博(天津)科技有限公司 | Be applied to the multifunctional button mechanism of kinetic balance car |
CN206481281U (en) * | 2017-03-09 | 2017-09-08 | 张宏泽 | A kind of electronics Sofe Switch |
-
2017
- 2017-03-09 CN CN201710136657.4A patent/CN106685387A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0347998A1 (en) * | 1988-06-24 | 1989-12-27 | Koninklijke Philips Electronics N.V. | Gate circuit |
CN102213993A (en) * | 2010-04-01 | 2011-10-12 | 康佳集团股份有限公司 | Circuit for soft startup and soft shutdown |
CN202772861U (en) * | 2012-08-29 | 2013-03-06 | 四川虹视显示技术有限公司 | Startup and shutdown circuit used in fish finder |
CN204161536U (en) * | 2014-09-26 | 2015-02-18 | 纳恩博(天津)科技有限公司 | Be applied to the multifunctional button mechanism of kinetic balance car |
CN206481281U (en) * | 2017-03-09 | 2017-09-08 | 张宏泽 | A kind of electronics Sofe Switch |
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Application publication date: 20170517 |
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