CN106684248A - Method for adjusting absorption wavelength of solar battery and prepared solar battery - Google Patents
Method for adjusting absorption wavelength of solar battery and prepared solar battery Download PDFInfo
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- CN106684248A CN106684248A CN201710182201.1A CN201710182201A CN106684248A CN 106684248 A CN106684248 A CN 106684248A CN 201710182201 A CN201710182201 A CN 201710182201A CN 106684248 A CN106684248 A CN 106684248A
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- 238000000034 method Methods 0.000 title claims abstract description 44
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- 239000000956 alloy Substances 0.000 claims description 64
- 229910045601 alloy Inorganic materials 0.000 claims description 62
- 230000031700 light absorption Effects 0.000 claims description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 229910021389 graphene Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 14
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 9
- 229910010380 TiNi Inorganic materials 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
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- 230000005525 hole transport Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
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- 230000009471 action Effects 0.000 claims description 2
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- 238000002360 preparation method Methods 0.000 description 17
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- 229910001000 nickel titanium Inorganic materials 0.000 description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
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- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- 229910018883 Pt—Cu Inorganic materials 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention provides a method for adjusting the absorption wavelength of a solar battery and a prepared solar battery. The method for adjusting the absorption wavelength of the solar battery comprises the following steps of: (1) adhering shape memory alloy on a basic battery (flexible perovskite solar battery); and (2) leading the shape memory alloy to generate preset automatic deformation by changing the temperature so as to drive a light-absorbing layer of the basic battery to generate deformation and further realize adjustment for the absorption wavelength of the solar battery. The scheme provided by the invention has the advantages that the shape memory effect and the superelasticity of the shape memory alloy are creatively utilized to automatically adjust the forbidden bandwidth of the solar battery, so that the functional characteristics such as optics, electrics and stability and the like of the solar battery are changed.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a method for adjusting absorption wavelength of a solar cell and a prepared solar cell.
Background
With the development of the current world industry and the continuous increase of the population, the global energy demand is also increased rapidly, and the related development and utilization of renewable clean energy are more and more concerned. In recent years, solar cells have been gaining acceptance as energy conversion devices for renewable clean energy sources.
Perovskite, as a novel photosensitive material, has been receiving more and more attention since 2009 due to a series of advantages of low cost, simple preparation, excellent light absorption performance, high electron mobility and the like. With the introduction and application of new materials and new structures, the photocurrent conversion efficiency of perovskite solar cells is continuously improved, and is increased from 3.8% to 22.1%, and the efficiency of the perovskite solar cells is initially equivalent to that of commercial silicon solar cells.
However, the wavelength range of sunlight is 300nm-1400nm, and the absorption range of the perovskite photosensitive material is usually 400nm-800nm due to the limitation of the forbidden bandwidth, and the perovskite photosensitive material is mainly concentrated in the visible light range, so that the perovskite solar cell is not ideal in the utilization efficiency of light energy. In order to improve such a situation, researchers are actively seeking various solutions.
In order to change the atomic distance and adjust the physical and chemical properties of the material, such as electricity, optics, magnetism, catalysis, etc., technicians usually adopt lattice mismatch or doping methods to realize elastic strain engineering of the material. For example, in the semiconductor field, the carrier mobility in silicon can be improved by 50% through lattice mismatch, the catalytic activity of Pt-Cu binary alloy nanoparticles can be improved due to strain generated by lattice mismatch, and TiO2The material is doped with other elements to provide internal stress and the like to improve the catalytic activity. However, most of the methods are difficult to prepare, high in cost, small in deformation and difficult to control, so that the practical application has more limiting factors, and the method is difficult to commercially popularize and apply in the aspect of improving the performance of the perovskite solar cell.
Disclosure of Invention
To solve the above problems, the present invention provides a method for adjusting the absorption wavelength of a solar cell.
Another object of the present invention is to provide a solar cell with adjustable absorption wavelength.
Still another object of the present invention is to provide a method for preparing the solar cell with adjustable absorption wavelength.
In order to achieve the above object, the present invention provides a method for adjusting absorption wavelength of a solar cell, comprising the steps of:
attaching a shape memory alloy to a base cell, the base cell being a flexible perovskite solar cell;
the shape memory alloy is subjected to preset automatic deformation by changing the temperature so as to drive the light absorption layer of the basic cell to deform, and therefore the absorption wavelength of the solar cell is adjusted.
The proposal provided by the invention creatively utilizes the shape memory effect and the super elasticity of the shape memory alloy to automatically adjust the forbidden bandwidth of the solar cell. The method is creative exploration of the application of elastic strain engineering in the field of solar cells, and provides a new idea and a new method for functional improvement of shape memory alloy thin film materials.
In the above method of adjusting the absorption wavelength of a solar cell, preferably, the shape memory alloy has completed the deformation setting by deformation and memory processing before the attachment; or the shape memory alloy is attached to the basic battery and then is subjected to deformation and memory treatment to complete deformation setting.
In the above method of adjusting the absorption wavelength of a solar cell, preferably, the shape memory alloy is attached to a counter electrode layer of a flexible perovskite solar cell.
The invention also provides a solar cell capable of adjusting the absorption wavelength, wherein the solar cell comprises a basic cell and a shape memory alloy, and the shape memory alloy capable of directly or indirectly driving the light absorption layer of the basic cell to deform is attached to at least one surface of the basic cell; the base cell is a flexible perovskite solar cell.
In the solar cell with adjustable absorption wavelength, the term "attached" does not mean that the shape memory alloy must be in direct contact with the perovskite solar cell, but may be in indirect contact with the perovskite solar cell through an auxiliary layer or an auxiliary structure. In addition, the auxiliary layer may be a layer of material that increases the strength of the bond or attachment of the two.
Among the above-described solar cells in which the absorption wavelength can be adjusted, flexible perovskite solar cells themselves have a certain expansion/contraction property and thus can be basically applied to the present invention. Preferably, the layers of the perovskite solar cell are made of materials with better expansion/contraction performance, especially materials which can be matched with the deformation range of the shape memory alloy. For the temperature control, a purely natural mode (day and night temperature difference) can be adopted, and the artificial regulation and control can be carried out when necessary.
In the solar cell capable of adjusting the absorption wavelength, preferably, the shape memory alloy is a two-way shape memory alloy; further preferably a Ti-Ni based alloy. More preferably, the Ti-Ni based alloy includes a TiNi alloy, a TiNiFe alloy, a TiNiNb alloy, a TiNiCu alloy, or a TiNiPd alloy. The phase transition temperature of the shape memory alloy is preferably moderate to avoid adverse effects on the stability and lifetime of the solar cell.
In the solar cell capable of adjusting the absorption wavelength, preferably, the memory alloy has a preset stretching deformation amount or contraction deformation amount of 2% to 10%. The deformation amount in the range is the range which most flexible perovskite solar cells can bear, and the forbidden band width can be effectively adjusted.
In the above-described adjustable absorption wavelength solar cell, preferably, the shape memory alloy is attached to a counter electrode layer of the flexible perovskite solar cell; the counter electrode layer is a non-metal electrode. Further preferably, the non-metallic electrode comprises a graphene electrode; the graphene electrode is a metal-doped graphene electrode; the doped metal is Au or Pt. More preferably, in the metal-doped graphene electrode, the doping amount of the metal is 1 to 3 at%. When the metal-doped graphene electrode is used as a counter electrode of a perovskite solar cell, compared with a metal electrode, the metal-doped graphene electrode has the following advantages: under the condition of ensuring the conductivity of the counter electrode, the cost of the material can be greatly reduced, and the flexibility of the perovskite solar cell is increased, so that the perovskite solar cell is more convenient to be tightly combined with the shape memory alloy and generate tensile compression deformation.
Solar energy with adjustable absorption wavelengthIn the cell, preferably, the flexible perovskite solar cell comprises a substrate layer, a conductive layer, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a counter electrode layer. In a preferred embodiment of the present invention, the substrate layer is made of PET, the conductive layer is made of ITO, and the electron transport layer is made of dense TiO2The perovskite light absorption layer is CH3NH3PbCl3The hole transport layer is made of a Spiro-OMeTAD material, and the counter electrode layer is made of a metal-doped graphene material.
The invention also provides a preparation method of the solar cell capable of adjusting the absorption wavelength, wherein the method is to deposit the shape memory alloy material on the preset part of the basic cell by adopting a magnetron sputtering deposition method; and then carrying out deformation and memory treatment on the shape memory alloy, thereby obtaining the solar cell with adjustable absorption wavelength.
In the above method for manufacturing a solar cell capable of adjusting an absorption wavelength, preferably, the deforming and memorizing the shape memory alloy specifically includes the following steps:
(1) stretching the shape memory alloy in a heating environment to enable the shape memory alloy to reach a first deformation amount, and memorizing the state into a first state by the shape memory alloy; at the moment, the basic battery is driven by the shape memory alloy to generate corresponding tensile deformation and obtain tensile strain;
(2) cooling the shape memory alloy in the first state to enable the shape memory alloy to contract to a second shape variable under the action of phase change, wherein the state is memorized into a second state by the shape memory alloy; at this time, the basic battery is also subjected to shrinkage deformation under the drive of the shape memory alloy, and obtains compressive strain.
In the method for manufacturing a solar cell capable of adjusting an absorption wavelength, the operations of the steps (1) to (2) are preferably repeated 2 to 10 times.
In the above method for manufacturing a solar cell capable of adjusting an absorption wavelength, preferably, the temperature of the temperature reduction treatment in the step (2) is reduced to room temperature.
In a preferred embodiment provided by the present invention, a flexible perovskite solar cell (the base layer is PET, the conductive layer is ITO, and the electron transport layer is dense TiO) is prepared by the following steps2The perovskite light-absorbing layer is CH3NH3PbCl3The hole transport layer is Spiro-OMeTAD):
(1) cleaning a PET/ITO substrate by using acetone, isopropanol and deionized water, and introducing inert gas for drying;
(2) depositing TiO2When in film forming, the Ti target is placed into a growth chamber of a magnetron sputtering deposition device, the distance between the target and the PET/ITO substrate is kept at 4.5cm, and the vacuum degree of the growth chamber is pumped to 10-3Introducing Ar and O into the growth chamber below Pa2Gas, Ar/O2The gas flow ratio was maintained at 100: 15, controlling the pressure in the growth chamber to be 0.001-100 Pa; starting a sputtering device, sputtering with the power of 200W, and depositing TiO on the conductive layer obtained in the pretreatment step (1)2A thin film to obtain an electron transport layer;
(3) will CH3NH3Cl and PbCl2Uniformly mixing, placing on the electron transport layer obtained in the step (2) by spin coating, heating to 150 ℃, and keeping the temperature for 20min to obtain a perovskite light absorption layer;
(4) spin-coating Spiro-OMeTAD on the perovskite light absorption layer obtained in the step (3), wherein the rotating speed is 4500rpm, and the time duration is 1 min;
(5) evenly coating a layer of HAuCl on the copper foil4(or H)2PtCl6) Then, putting the copper foil into a tube furnace, and preparing Au (or Pt) single-atom doped graphene by adopting a CVD (chemical vapor deposition) method;
(6) and (3) transferring the Au (or Pt) monoatomic doped graphene in the step (5) to the perovskite light absorption layer obtained in the step (4) by using a PMMA liquid phase transfer method to obtain a counter electrode layer.
In a preferred embodiment provided by the present invention, the shape memory alloy is attached to the counter electrode layer of the flexible perovskite solar cell by:
(1) according to Ni, Ti, X ═ a: a: (100% -2a), wherein X is a doping element (Cu, Fe, Nb, Pd, etc.), and an as-cast alloy (phi 100mm multiplied by 4mm) is selected as a target material; in order to control the components of the membrane, a proper amount of pure Ti is added on the surface of a target to supplement the Ti in the membrane;
(2) the sputtering process comprises cleaning the surface with particles, and performing sputtering with Ar working pressure of 5 × 10- 1Pa; the sputtering voltage is 3000V; the sputtering power is 300W; and preparing the flexible perovskite battery deposited with the shape memory alloy film.
In a preferred embodiment of the present invention, the shape memory alloy is subjected to a deformation and memory process by the steps of:
(1) heating the shape memory alloy deposited on the flexible perovskite solar cell substrate to 60 ℃, stretching the shape memory alloy by 2-10%, and driving the flexible perovskite solar cell to generate tensile strain by the shape memory alloy;
(2) then, the temperature is reduced to room temperature, and the shape memory alloy is subjected to phase change contraction by 2-10%, so that the shape memory alloy drives the flexible perovskite solar cell to be subjected to compressive strain;
(3) after the operations of the steps (1) to (2) are carried out for multiple times, the flexible perovskite solar cell can generate self-tensile strain at 60 ℃ under the drive of the shape memory alloy, and can generate self-compressive strain after the temperature is reduced to the room temperature, so that the solar cell A with adjustable absorption wavelength is prepared.
Taking the solar cell a capable of adjusting the absorption wavelength as an example, when sunlight is emitted, the sunlight irradiation temperature is high, so that the shape memory alloy is automatically stretched to drive the flexible perovskite solar cell to stretch, the lattice spacing is increased, the forbidden bandwidth is reduced, and the wavelength and the absorption efficiency of the light capable of being absorbed are increased; when the solar cell is at night, on the contrary, the shape memory alloy drives the flexible perovskite solar cell to shrink, the lattice spacing is reduced, and meanwhile, water and air in the solar cell are squeezed out, so that the stability of the solar cell is kept.
According to the invention, the shape memory alloy is attached to the flexible perovskite solar cell, the shape memory effect and the superelasticity of the shape memory alloy are utilized, the large deformation of the shape memory alloy film is realized by methods such as pretreatment of the shape memory alloy film, the tensile or compressive strain of the film at different temperatures is realized, and the forbidden bandwidth of the perovskite solar cell is further adjusted, so that the functional characteristics in various aspects such as optics, electrics, stability and the like are changed. And the strain state can exist stably under different temperature conditions, the effect is obvious, and the method is simple.
Drawings
FIG. 1 is a stress-strain plot of a NiTi film of example 1;
fig. 2 is a graph comparing the light absorption curves of untreated and NiTi alloy treated perovskite solar cells of example 1.
Detailed Description
The technical solutions of the present invention will be described in detail below in order to clearly understand the technical features, objects, and advantages of the present invention, but the present invention is not limited to the practical scope of the present invention.
Example 1
The embodiment provides a solar cell capable of adjusting absorption wavelength, which can realize adjustment of absorption wavelength of a perovskite solar cell by means of a NiTi alloy thin film, and the specific preparation process comprises the following steps:
1. preparation of flexible perovskite solar cell
(1) Cleaning a PET/ITO substrate by using acetone, isopropanol and deionized water, and introducing inert gas for drying;
(2) depositing TiO2When in film forming, the Ti target is placed into a growth chamber of a magnetron sputtering deposition device, the distance between the target and the PET/ITO substrate is kept at 4.5cm, and the vacuum degree of the growth chamber is pumped to 10-3Introducing Ar and O into the growth chamber below Pa2Gas, Ar/O2The gas flow ratio was maintained at 100: 15, controlling the pressure in the growth chamber to be 0.001 Pa; starting a sputtering device, sputtering with the power of 200W, and depositing TiO on the ITO conductive layer obtained in the step (1) after pretreatment2A thin film to obtain an electron transport layer;
(3) will CH3NH3Cl and PbCl2Uniformly mixing, placing on the electron transport layer obtained in the step (2) by spin coating, heating to 150 ℃, and keeping the temperature for 20min to obtain a perovskite light absorption layer;
(4) spin-coating Spiro-OMeTAD on the perovskite light absorption layer obtained in the step (3), wherein the rotating speed is 4500rpm, and the time duration is 1 min;
(5) uniformly coating a layer of H on the copper foil2PtCl6Then, putting the copper foil into a tube furnace, and preparing 1 at% Pt monatomic doped graphene by adopting a CVD method;
(6) transferring the Pt monoatomic doped graphene in the step (5) to the perovskite light absorption layer obtained in the step (4) by using a PMMA liquid phase transfer method to obtain a counter electrode layer; and finishing the preparation of the flexible perovskite solar cell.
2. Attaching shape memory alloys to counter electrode layers of flexible perovskite solar cells
(1) Selecting an as-cast alloy (phi 100mm multiplied by 4mm) as a target according to an atomic ratio of 50:50 of Ni and Ti; in order to control the components of the membrane, a proper amount of pure Ti is added on the surface of a target to supplement the Ti in the membrane;
(2) the sputtering process comprises cleaning the surface with particles, and performing sputtering with Ar working pressure of 5 × 10- 1Pa; the sputtering voltage is 3000V; the sputtering power is 300W; and preparing the flexible perovskite battery deposited with the TiNi alloy film.
3. Deforming and memorizing the shape memory alloy
(1) Heating TiNi alloy deposited on a flexible perovskite solar cell substrate to 60 ℃, and stretching the TiNi alloy by about 8%, wherein the TiNi alloy drives the flexible perovskite solar cell to generate tensile strain;
(2) then, the temperature is reduced to room temperature, and the TiNi alloy shrinks by about 8% due to phase change, so that the TiNi alloy drives the flexible perovskite solar cell to be in compressive strain;
(3) after the operations from the step (1) to the step (2) are carried out for multiple times, the flexible perovskite solar cell can generate self-tensile strain at 60 ℃ under the drive of TiNi alloy, and can generate self-compressive strain after the temperature is reduced to the room temperature, so that the solar cell with adjustable absorption wavelength is prepared.
And (3) performance testing:
the solar cell with adjustable absorption wavelength prepared in this example was tested, and the stress-strain curve thereof is shown in fig. 1.
The solar cell with adjustable absorption wavelength prepared in the embodiment and the NiTi thin film and perovskite solar cell prepared under the same growth condition are put into a methylene blue solution, and are irradiated for 3 hours by a daylight lamp light source, and then the following results are found: the conversion rate of the perovskite solar cell without the NiTi film is 9.4 percent, and the conversion rate of the perovskite solar cell film after the NiTi film coverage training is 15 percent; the optical forbidden bandwidth of the film is changed from 1.88eV to 1.62eV through ultraviolet-visible absorption spectrum. The light absorption curve of both is shown in fig. 2. By comparison, it can be found that: untreated perovskite solar cells fail to provide efficient output after 7 days; the perovskite solar cell covered with the NiTi alloy can still keep 15% of conversion rate after 14 days, and has good stability.
Example 2
The embodiment provides a solar cell capable of adjusting absorption wavelength, which can realize adjustment of absorption wavelength of a perovskite solar cell by means of a NiTiNb alloy thin film, and the specific preparation process is as follows:
1. preparation of flexible perovskite solar cell
(1) Cleaning a PET/ITO substrate by using acetone, isopropanol and deionized water, and introducing inert gas for drying;
(2) depositing TiO2When in film forming, the Ti target is placed into a growth chamber of a magnetron sputtering deposition device, the distance between the target and the PET/ITO substrate is kept at 4.5cm, and the vacuum degree of the growth chamber is pumped to 10-3Introducing Ar and O into the growth chamber below Pa2Gas, Ar/O2The gas flow ratio was maintained at 100: 15, controlling the pressure in the growth chamber to be 0.01 Pa; starting a sputtering device, sputtering with the power of 200W, and depositing TiO on the ITO conductive layer obtained in the step (1) after pretreatment2A thin film to obtain an electron transport layer;
(3) will CH3NH3Cl and PbCl2Uniformly mixing, placing on the electron transport layer obtained in the step (2) by spin coating, heating to 150 ℃, and keeping the temperature for 20min to obtain a perovskite light absorption layer;
(4) spin-coating Spiro-OMeTAD on the perovskite light absorption layer obtained in the step (3), wherein the rotating speed is 4500rpm, and the time duration is 1 min;
(5) uniformly coating a layer of H on the copper foil2PtCl6Then, putting the copper foil into a tube furnace, and preparing 3 at% of Pt monatomic doped graphene by adopting a CVD (chemical vapor deposition) method;
(6) transferring the Pt monoatomic doped graphene in the step (5) to the perovskite light absorption layer obtained in the step (4) by using a PMMA liquid phase transfer method to obtain a counter electrode layer; and finishing the preparation of the flexible perovskite solar cell.
2. Attaching shape memory alloys to counter electrode layers of flexible perovskite solar cells
(1) Selecting an as-cast alloy (phi 100mm multiplied by 4mm) as a target according to the atomic ratio of Ni to Ti to Nb of 45 to 10; in order to control the components of the membrane, a proper amount of pure Ti is added on the surface of a target to supplement the Ti in the membrane;
(2) the sputtering process comprises cleaning the surface with particles, and performing sputtering with Ar working pressure of 5 × 10- 1Pa; the sputtering voltage is 3000V; the sputtering power is 300W; and preparing the flexible perovskite battery deposited with the NiTiNb alloy film.
3. Deforming and memorizing the shape memory alloy
(1) Heating the NiTiNb alloy deposited on the flexible perovskite solar cell substrate to 60 ℃, stretching the NiTiNb alloy by about 2%, and driving the flexible perovskite solar cell to generate tensile strain by the NiTiNb alloy;
(2) then, the temperature is reduced to room temperature, and the NiTiNb alloy shrinks by about 2% due to phase change, so that the NiTiNb alloy drives the flexible perovskite solar cell to be in compressive strain;
(3) after the operations from the step (1) to the step (2) are carried out for multiple times, the flexible perovskite solar cell can generate self-tensile strain at 60 ℃ under the drive of the NiTiNb alloy, and can generate self-compressive strain after the temperature is reduced to the room temperature, so that the solar cell with adjustable absorption wavelength is prepared.
Example 3
The embodiment provides a solar cell capable of adjusting absorption wavelength, which can realize adjustment of absorption wavelength of a perovskite solar cell by means of a NiTiFe alloy thin film, and the specific preparation process comprises the following steps:
1. preparation of flexible perovskite solar cell
(1) Cleaning a PET/ITO substrate by using acetone, isopropanol and deionized water, and introducing inert gas for drying;
(2) depositing TiO2When in film forming, the Ti target is placed into a growth chamber of a magnetron sputtering deposition device, the distance between the target and the PET/ITO substrate is kept at 4.5cm, and the vacuum degree of the growth chamber is pumped to 10-3Introducing Ar and O into the growth chamber below Pa2Gas, Ar/O2The gas flow ratio was maintained at 100: 15, controlling the pressure in the growth chamber to be 0.1 Pa; starting a sputtering device, sputtering with the power of 200W, and depositing TiO on the ITO conductive layer obtained in the step (1) after pretreatment2A thin film to obtain an electron transport layer;
(3) will CH3NH3Cl and PbCl2Uniformly mixing, placing on the electron transport layer obtained in the step (2) by spin coating, heating to 150 ℃, and keeping the temperature for 20min to obtain a perovskite light absorption layer;
(4) spin-coating Spiro-OMeTAD on the perovskite light absorption layer obtained in the step (3), wherein the rotating speed is 4500rpm, and the time duration is 1 min;
(5) uniformly coating a layer of H on the copper foil2PtCl6Then, putting the copper foil into a tube furnace, and preparing Pt monatomic 2 at% doped graphene by adopting a CVD method;
(6) transferring the Pt monoatomic doped graphene in the step (5) to the perovskite light absorption layer obtained in the step (4) by using a PMMA liquid phase transfer method to obtain a counter electrode layer; and finishing the preparation of the flexible perovskite solar cell.
2. Attaching shape memory alloys to counter electrode layers of flexible perovskite solar cells
(1) According to the atomic ratio of Ni, Ti and Fe of 47:47:6, selecting an as-cast alloy (phi 100mm multiplied by 4mm) as a target material; in order to control the components of the membrane, a proper amount of pure Ti is added on the surface of a target to supplement the Ti in the membrane;
(2) the sputtering process comprises cleaning the surface with particles, and performing sputtering with Ar working pressure of 5 × 10- 1Pa; the sputtering voltage is 3000V; the sputtering power is 300W; to obtain the soft film deposited with the NiTiFe alloy filmA perovskite battery.
3. Deforming and memorizing the shape memory alloy
(1) Heating the NiTiFe alloy deposited on the flexible perovskite solar cell substrate to 60 ℃, and stretching the NiTiFe alloy by about 5%, wherein the NiTiFe alloy drives the flexible perovskite solar cell to generate tensile strain;
(2) then, the temperature is reduced to room temperature, and the NiTiFe alloy shrinks by about 5% due to phase change, so that the NiTiFe alloy drives the flexible perovskite solar cell to be in compressive strain;
(3) after the operations from the step (1) to the step (2) are carried out for multiple times, the flexible perovskite solar cell can generate self-tensile strain at 60 ℃ under the drive of the NiTiFe alloy, and can generate self-compressive strain after the temperature is reduced to the room temperature, so that the solar cell with adjustable absorption wavelength is prepared.
Example 4
The embodiment provides a solar cell capable of adjusting absorption wavelength, which can realize adjustment of absorption wavelength of a perovskite solar cell by means of a NiTiCu alloy thin film, and the specific preparation process is as follows:
1. preparation of flexible perovskite solar cell
(1) Cleaning a PET/ITO substrate by using acetone, isopropanol and deionized water, and introducing inert gas for drying;
(2) depositing TiO2When in film forming, the Ti target is placed into a growth chamber of a magnetron sputtering deposition device, the distance between the target and the PET/ITO substrate is kept at 4.5cm, and the vacuum degree of the growth chamber is pumped to 10-3Introducing Ar and O into the growth chamber below Pa2Gas, Ar/O2The gas flow ratio was maintained at 100: 15, controlling the pressure in the growth chamber to be 10 Pa; starting a sputtering device, sputtering with the power of 200W, and depositing TiO on the ITO conductive layer obtained in the step (1) after pretreatment2A thin film to obtain an electron transport layer;
(3) will CH3NH3Cl and PbCl2Uniformly mixing, placing on the electron transport layer obtained in the step (2) by spin coating, heating to 150 ℃, and keeping the temperature for 20min to obtain a perovskite light absorption layer;
(4) spin-coating Spiro-OMeTAD on the perovskite light absorption layer obtained in the step (3), wherein the rotating speed is 4500rpm, and the time duration is 1 min;
(5) evenly coating a layer of HAuCl on the copper foil4Then, putting the copper foil into a tube furnace, and preparing 1 at% of Au single atom doped graphene by adopting a CVD method;
(6) transferring the Au monoatomic doped graphene in the step (5) to the perovskite light absorption layer obtained in the step (4) by using a PMMA liquid phase transfer method to obtain a counter electrode layer; and finishing the preparation of the flexible perovskite solar cell.
2. Attaching shape memory alloys to counter electrode layers of flexible perovskite solar cells
(1) According to the atomic ratio of Ni, Ti and Cu of 45:45:10, selecting an as-cast alloy (phi 100mm multiplied by 4mm) as a target material; in order to control the components of the membrane, a proper amount of pure Ti is added on the surface of a target to supplement the Ti in the membrane;
(2) the sputtering process comprises cleaning the surface with particles, and performing sputtering with Ar working pressure of 5 × 10- 1Pa; the sputtering voltage is 3000V; the sputtering power is 300W; and preparing the flexible perovskite battery deposited with the NiTiCu alloy film.
3. Deforming and memorizing the shape memory alloy
(1) Heating the NiTiCu alloy deposited on the flexible perovskite solar cell substrate to 60 ℃, and stretching the NiTiCu alloy by about 2%, wherein the NiTiCu alloy drives the flexible perovskite solar cell to generate tensile strain;
(2) then, the temperature is reduced to room temperature, and the NiTiCu alloy shrinks by about 2% due to phase change, so that the NiTiCu alloy drives the flexible perovskite solar cell to be in compressive strain;
(3) after the operations from the step (1) to the step (2) are carried out for multiple times, the flexible perovskite solar cell can generate self-tensile strain at 60 ℃ under the drive of the NiTiCu alloy, and can generate self-compressive strain after the temperature is reduced to the room temperature, so that the solar cell with adjustable absorption wavelength is prepared.
Example 5
The embodiment provides a solar cell capable of adjusting absorption wavelength, which can realize adjustment of absorption wavelength of a perovskite solar cell by means of a NiTiPd alloy thin film, and the specific preparation process comprises the following steps:
1. preparation of flexible perovskite solar cell
(1) Cleaning a PET/ITO substrate by using acetone, isopropanol and deionized water, and introducing inert gas for drying;
(2) depositing TiO2When in film forming, the Ti target is placed into a growth chamber of a magnetron sputtering deposition device, the distance between the target and the PET/ITO substrate is kept at 4.5cm, and the vacuum degree of the growth chamber is pumped to 10-3Introducing Ar and O into the growth chamber below Pa2Gas, Ar/O2The gas flow ratio was maintained at 100: 15, controlling the pressure in the growth chamber to be 100 Pa; starting a sputtering device, sputtering with the power of 200W, and depositing TiO on the ITO conductive layer obtained in the step (1) after pretreatment2A thin film to obtain an electron transport layer;
(3) will CH3NH3Cl and PbCl2Uniformly mixing, placing on the electron transport layer obtained in the step (2) by spin coating, heating to 150 ℃, and keeping the temperature for 20min to obtain a perovskite light absorption layer;
(4) spin-coating Spiro-OMeTAD on the perovskite light absorption layer obtained in the step (3), wherein the rotating speed is 4500rpm, and the time duration is 1 min;
(5) evenly coating a layer of HAuCl on the copper foil4Then putting the copper foil into a tube furnace and preparing the copper foil by adopting a CVD method3 at% of Au monatomic doped graphene;
(6) transferring the Au monoatomic doped graphene in the step (5) to the perovskite light absorption layer obtained in the step (4) by using a PMMA liquid phase transfer method to obtain a counter electrode layer; and finishing the preparation of the flexible perovskite solar cell.
2. Attaching shape memory alloys to counter electrode layers of flexible perovskite solar cells
(1) According to the atomic ratio of Ni, Ti and Cu of 45:45:10, selecting an as-cast alloy (phi 100mm multiplied by 4mm) as a target material; in order to control the components of the membrane, a proper amount of pure Ti is added on the surface of a target to supplement the Ti in the membrane;
(2) the sputtering process comprises cleaning the surface with particles, and performing sputtering with Ar working pressure of 5 × 10- 1Pa; the sputtering voltage is 3000V; the sputtering power is 300W; and preparing the flexible perovskite battery deposited with the NiTiCu alloy film.
3. Deforming and memorizing the shape memory alloy
(1) Heating the NiTiPd alloy deposited on the flexible perovskite solar cell substrate to 60 ℃, and stretching the NiTiPd alloy by about 10%, wherein the NiTiPd alloy drives the flexible perovskite solar cell to generate tensile strain;
(2) then, the temperature is reduced to room temperature, and the NiTiPd alloy shrinks by about 10% due to phase change, so that the NiTiPd alloy drives the flexible perovskite solar cell to be in compressive strain;
(3) after the operations from the step (1) to the step (2) are carried out for multiple times, the flexible perovskite solar cell can generate self-tensile strain at 60 ℃ under the drive of the NiTiPd alloy, and can generate self-compressive strain after the temperature is reduced to the room temperature, so that the solar cell with adjustable absorption wavelength is prepared.
Claims (10)
1. A method of adjusting the absorption wavelength of a solar cell, the method comprising the steps of:
attaching a shape memory alloy to a base cell, the base cell being a flexible perovskite solar cell;
the shape memory alloy is subjected to preset automatic deformation by changing the temperature so as to drive the light absorption layer of the basic cell to deform, and therefore the absorption wavelength of the solar cell is adjusted.
2. The method of adjusting the absorption wavelength of a solar cell of claim 1, wherein the shape memory alloy has been subjected to a deformation and memory process to complete the deformation setting prior to attachment; or,
the shape memory alloy is attached to the basic battery and then is subjected to deformation and memory treatment to complete deformation setting.
3. The method of adjusting the absorption wavelength of a solar cell according to claim 1 or 2, wherein the shape memory alloy is attached to the counter electrode layer of the flexible perovskite solar cell.
4. A solar cell capable of adjusting absorption wavelength is characterized by comprising a base cell and a shape memory alloy,
at least one surface of the basic battery is attached with shape memory alloy which can directly or indirectly drive the light absorption layer of the basic battery to generate deformation;
the base cell is a flexible perovskite solar cell.
5. The adjustable absorption wavelength solar cell of claim 4 wherein the shape memory alloy is a two-way shape memory alloy; preferably a Ti-Ni based alloy; further preferably, the Ti-Ni based alloy includes a TiNi alloy, a TiNiFe alloy, a TiNiNb alloy, a TiNiCu alloy, or a TiNiPd alloy.
6. The adjustable absorption wavelength solar cell according to claim 4, wherein the memory alloy has a preset amount of tensile deformation or shrinkage deformation of 2-10%.
7. The adjustable absorption wavelength solar cell according to claim 4, wherein the shape memory alloy is attached to a counter electrode layer of a flexible perovskite solar cell; the counter electrode layer is a malleable non-metal electrode;
preferably, the non-metallic electrode comprises a graphene electrode;
further preferably, the graphene electrode is a metal-doped graphene electrode; the doped metal is Au or Pt; more preferably, in the metal-doped graphene electrode, the doping amount of the metal is 1 to 3 at%.
8. The tunable absorption wavelength solar cell according to any one of claims 4 to 7, wherein the flexible perovskite solar cell comprises a substrate layer, a conductive layer, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a counter electrode layer;
preferably, the substrate layer is made of PET material, the conductive layer is made of ITO material, and the electron transmission layer is made of compact TiO2The perovskite light absorption layer is CH3NH3PbCl3The hole transport layer is made of a Spiro-OMeTAD material, and the counter electrode layer is made of a metal-doped graphene material.
9. The method for preparing a solar cell capable of adjusting the absorption wavelength according to any one of claims 4 to 8, wherein the method comprises depositing the shape memory alloy material on the predetermined portion of the base cell by magnetron sputtering deposition; and then carrying out deformation and memory treatment on the shape memory alloy, thereby obtaining the solar cell with adjustable absorption wavelength.
10. The method for preparing a solar cell according to claim 9, wherein the deforming and memory treatment of the shape memory alloy specifically comprises the following steps:
(1) stretching the shape memory alloy in a heating environment to enable the shape memory alloy to reach a first deformation amount, and memorizing the state into a first state by the shape memory alloy; at the moment, the basic battery is driven by the shape memory alloy to generate corresponding tensile deformation and obtain tensile strain;
(2) cooling the shape memory alloy in the first state to enable the shape memory alloy to contract to a second shape variable under the action of phase change, wherein the state is memorized into a second state by the shape memory alloy; at the moment, the basic battery is also subjected to shrinkage deformation under the drive of the shape memory alloy, and obtains compressive strain;
preferably, the operations of the above steps (1) to (2) are repeated 2 to 10 times;
further preferably, the temperature of the temperature reduction treatment in the step (2) is reduced to room temperature.
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