CN106681102A - Nano-imprinting method - Google Patents
Nano-imprinting method Download PDFInfo
- Publication number
- CN106681102A CN106681102A CN201611148304.8A CN201611148304A CN106681102A CN 106681102 A CN106681102 A CN 106681102A CN 201611148304 A CN201611148304 A CN 201611148304A CN 106681102 A CN106681102 A CN 106681102A
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- mould
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- pattern
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000012546 transfer Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 12
- 150000001343 alkyl silanes Chemical class 0.000 claims description 4
- 238000005422 blasting Methods 0.000 claims description 4
- 239000002052 molecular layer Substances 0.000 claims description 4
- 240000007594 Oryza sativa Species 0.000 claims description 3
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 3
- 238000001127 nanoimprint lithography Methods 0.000 abstract 1
- 238000003825 pressing Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 238000004049 embossing Methods 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- -1 Polydimethylsiloxane Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
The invention relates to a nanoimprint method, which comprises the following steps: providing an integrated mold; the integrated mold comprises a planar plate and a plurality of unit molds with nano patterns tightly fixed on the planar plate; providing a substrate; forming a photoresist layer on the surface of the substrate; pressing the integrated mold against the photoresist layer to replicate the nano-pattern on the unit mold to the photoresist layer; separating the planar plate; and separating the plurality of unit molds from the photoresist layer one by one to complete the transfer of the nano pattern. In the demolding process of the nanoimprint lithography method, the surface stress of each unit mold is small, so that the problems of mold damage and product defects caused by overlarge surface stress in the demolding process can be effectively solved, the product yield is improved, and the manufacturing cost is reduced.
Description
Technical field
The present invention relates to nanometer embossing field, more particularly to a kind of nano-imprinting method.
Background technology
Since scientist Stephen Chou of Chinese origin propose nano impression concept so far in nineteen ninety-five, nanometer embossing is
Through developing into one of core nanoparticles technology in scientific and technological revolution.Nanometer embossing is overcome in photoetching technique because diffraction causes
Resolution ratio limitation, current resolution ratio reached below 5nm, so as to be provided to manufacture small size, high density integrated circuit
Strong support.At present, nanometer embossing has formd the main class of three kinds of hot padding, Soft lithograph and ultraviolet stamping etc.
Type.Traditional nano-imprinting method, the stripping of glue is imprinted in the demoulding, causes mould part damage easily occur in knockout course
It is bad, product is also resulted in while increased manufacturing cost and certain defect occurs, so as to reduce yield rate.
The content of the invention
Based on this, it is necessary to provide that a kind of yield rate is higher and nano-imprinting method of low cost of manufacture.
A kind of nano-imprinting method, including step：Integral mould is provided；The integral mould is including surface plate and closely
The multiple being fixed on the surface plate has the unit mould of nano-pattern；Substrate is provided；Light is formed in the substrate surface
Photoresist layer；The integral mould is pressed on the photoresist layer and is replicated in the photoetching with by the nano-pattern on unit mould
Glue-line；Separate the surface plate；And separate multiple unit moulds with the photoresist layer one by one, to complete nano-pattern
Transfer.
Wherein in one embodiment, it is described offer integral mould the step of include：Mold materials are provided；In mold materials
On etch the unit mould with nano-pattern；Multiple unit moulds are tightly fixed on a surface plate so as to form one
Individual integral mould.
Wherein in one embodiment, it is described etched on mold materials with nano-pattern unit mould the step of
Afterwards, it is described the step of multiple unit moulds are tightly fixed on a surface plate so as to form an integral mould before also
Including step：Side to unit mould is processed by shot blasting.
Wherein in one embodiment, the step of the side to unit mould is processed by shot blasting in, after polishing
The roughness of the side of unit mould is less than 50 nanometers.
Wherein in one embodiment, the step of the offer integral mould after, described the integral mould is pressed in
Also include step before the step of on the photoresist layer so that the nano-pattern on unit mould is replicated in into the photoresist layer：
Antiblocking layers are formed on the integral mould surface；The antiblocking layers are used to prevent the integral mould with the photoresist layer
Adhesion.
Wherein in one embodiment, the antiblocking layers are alkyl silane molecular layer.
It is described in the step of substrate surface forms photoresist layer wherein in one embodiment, the photoetching of formation
The thickness of glue-line is 10 nanometers~500 nanometers.
Wherein in one embodiment, it is described the substrate surface formed photoresist layer the step of after, it is described by institute
The step of stating integral mould and be pressed on the photoresist layer so that the nano-pattern on unit mould is replicated in into the photoresist layer
Also include step before：The photoresist layer is heated to more than the softening temperature of photoresist.
It is described that the integral mould is pressed on the photoresist layer with by unit mould wherein in one embodiment
Nano-pattern include the step of be replicated in the photoresist layer：By the integral mould with 0.01 megapascal (MPa)~10 MPa this
The pressure of card is pressed on the photoresist layer, and is kept for 0.1 hour~1 hour.
It is described that the integral mould is pressed on the photoresist layer with by unit mould wherein in one embodiment
Nano-pattern the step of be replicated in the photoresist layer after, the separation surface plate the step of before also include step
Suddenly：The photoresist layer is gradually cooled down to cause the temperature of the photoresist layer less than the glass transition temperature of photoresist.
Above-mentioned nano-imprinting method, realizes receiving using the integral mould including unit mould of the multiple with nano-pattern
The transfer of rice pattern.During demoulding, first surface plate is separated, then again divides multiple unit moulds with photoresist layer one by one
From to be finally completed the transfer of nano-pattern.In the knockout course of above-mentioned nano-imprinting method, the surface of each unit mould should
Power is smaller, such that it is able to be prevented effectively from knockout course due to surface stress it is excessive caused by burn failure and product defects
Problem, and then improve finished product rate and reduce manufacturing cost.
Brief description of the drawings
Fig. 1 is the flow chart of the nano-imprinting method in an embodiment；
The structural representation of the integral mould that Fig. 2 is provided for S110 in Fig. 1；
Another structural representation of the integral mould that Fig. 3 is provided for S110 in Fig. 1；
Fig. 4 is the idiographic flow schematic diagram of S110 in Fig. 1.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Fig. 1 is the flow chart of nano-imprinting method in an embodiment, and the nano-imprinting method is comprised the following steps：
S110, there is provided integral mould.
Fig. 2 is the schematic diagram of the integral mould for providing.Referring to Fig. 2, integral mould includes surface plate 210 and unit mould
220.Multiple unit moulds 220 are tightly fixed on surface plate.Each unit mould 220 has been respectively formed on nano-pattern 230, from
And there is complete target nano-pattern to be transferred on the integral mould for obtaining.Nano-pattern 230 in Fig. 2 is only to show
Example, can be arranged as required into various patterns, as shown in Figure 3 in practice.Wherein, 232,234,236 and 238 table in Fig. 3
Show the unit mould with different nano-patterns.Each mould has different surface topography and function or sizes, can basis
User needs to carry out independent assortment collocation.It is the relation for embodying multiple unit moulds 220 in Fig. 2 and Fig. 3, therefore by multiple units
Spacing between mould 220 has done enhanced processing.
Fig. 4 is the particular flow sheet for providing integral mould, including following sub-step：
S310, there is provided mold materials.
Mold materials can be as Polydimethylsiloxane (dimethyl silicone polymer), PVC (polyvinyl chloride),
The soft mode materials such as PVA (polyvinyl alcohol), PMMA (polymethyl methacrylate), PET (polyethylene terephthalate), also may be used
Think the hard mould materials such as silica, silicon, nickel or quartz glass.
S320, etches the unit mould with nano-pattern on mould.
The preparation method of unit mould can use extreme ultraviolet etching, electron beam lithography, ion beam etching or use
Conventional mechanical method is prepared.In the present embodiment, the side of unit mould can also be thrown after unit mould is obtained
Light so that the surface roughness of side is less than 50nm.By reducing the side roughness of unit mould, unit mould is conducive to exist
Splicing on surface plate, improves usable floor area.
S330, multiple unit moulds are tightly fixed on a surface plate so as to form an integral mould.
Unit mould can be fixed on surface plate by the way of backsize magnetic material.The material of surface plate is adopted
With metallic nickel or ceramics.It is appreciated that be also adopted by other conventional fixed forms of this area being fixed to unit mould.
In the present embodiment, after integral mould is formed, can also be on the surface (for the one side pressed with photoresist layer) of integral mould
Coating antiblocking layers.Photoetching glue sticking when antiblocking layers are used to prevent the demoulding in integral mould and photoresist layer, to ensure list
First mould is hardly damaged in the demoulding, and then reduces product defects, improves the yield rate of product and reduces manufacturing cost.Specifically
Ground, antiblocking layers can be alkyl silane molecular layer.
S120, there is provided substrate.
Substrate as device to be prepared matrix, its material can be set as needed.
S130, photoresist layer is formed in substrate surface.
It is the polymer of 50nm~500nm in substrate surface spin coating a layer thickness, forms uniform photoresist layer.Polymer
Can be PVA (polyvinyl alcohol) or PMMA (polymethyl methacrylate).
S140, integral mould is pressed on photoresist layer and is replicated in photoresist layer with by the nano-pattern on unit mould
On.
In the present embodiment, when by integral mould pressure on a photoresist, first photoresist layer can be heated.By photoetching
Glue-line is heated to more than the softening temperature of photoresist, to cause that photoresist softens.After photoetching gum softening, by integral mould with
The pressure pressure of 0.01~10Mpa on a photoresist, and keeps 0.1~1h, to cause that the pattern on integral mould is completely copied to
On photoresist.
S150, separating plane plate.
After pattern on integral mould is completely copied on photoresist, start gradually to cool down photoresist layer to cause photoetching
Glass transition temperature of the temperature of glue-line less than photoresist.Then, surface plate is separated from integral mould.
S160, multiple unit moulds are separated with photoresist layer one by one, to complete the transfer of nano-pattern.
After surface plate is separated, multiple unit moulds are separated with photoresist one by one using the method peeled off, so that by
Individual releasing unit mould, finally realizes the transfer of nano-pattern.
Above-mentioned nano-imprinting method, realizes receiving using the integral mould including unit mould of the multiple with nano-pattern
The transfer of rice pattern.During demoulding, first surface plate is separated, then again divides multiple unit moulds with photoresist layer one by one
From to be finally completed the transfer of nano-pattern.In the knockout course of above-mentioned nano-imprinting method, the surface of each unit mould should
Power is smaller, such that it is able to be prevented effectively from knockout course due to surface stress it is excessive caused by burn failure and product defects
Problem, and then improve finished product rate and reduce manufacturing cost.Above-mentioned nano-imprinting method is especially suitable for large area
Moulding process in.
Above-mentioned nano-imprinting method is described in further detail with reference to a specific embodiment.
First, it is 20 × 20mm in area using high-resolution electron beam2Silicon chip on etch square unit mould
Tool.Side to unit mould surrounding is polished so that the surface roughness of side less than 50nm.By as 5 × 5 pieces
Unit mould is closely combined on a surface plate, and it is 100 × 100mm to form one piece of area2Integral mould.It is 2 in Fig. 2
The schematic perspective view of × 2 integral mould.In order to prevent the photoresist adhesion during demoulding on mould and substrate, in integral mould
Surface forms alkyl silane molecular layer, and integral mould is attached on nano marking press.
Then, spin coating a layer thickness is about the PMMA of 200nm on a planar substrate, forms uniform photoresist layer.Light
Photoresist is heated to 180 DEG C, softens it.The integral mould that will be obtained on a photoresist, and keeps 0.5h with the pressure pressure of 5Mpa.
It has been completely transferred on photoresist Deng the pattern on integral mould, has started gradually cooling and cause that photoresist temperature is less than its glass
Change temperature.Surface plate is separated, then releasing unit mould one by one, finally realize the pattern transfer of large area.
The product pattern for imprinting out by the above method almost zero defect, unit mould is not damaged, repeats above-mentioned side
Method is proved, using the high yield rate of the above method in 70%, have effectively achieved large-area nano impressing.More embodiment ginsengs
See the table below：
In upper table, x represents the quantity of horizontal unit mould, and y represents the quantity of longitudinal mold.By after above test of many times
Statistics, the large area pattern defect for preparing is less than 10%, and high yield rate successfully realizes large-area nano pressure in 70%
Print.The method preparation efficiency is high, without large area more mold exchange, is effectively reduced maintenance and preparation cost, so as to be solar energy
Battery, photonic crystal, liquid crystal display etc. provide strong support.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of nano-imprinting method, including step：
Integral mould is provided；The integral mould includes that surface plate and the multiple being tightly fixed on the surface plate have and receives
The unit mould of rice pattern；
Substrate is provided；
Photoresist layer is formed in the substrate surface；
The integral mould is pressed on the photoresist layer and is replicated in the photoresist with by the nano-pattern on unit mould
Layer；
Separate the surface plate；And
Multiple unit moulds are separated with the photoresist layer one by one, to complete the transfer of nano-pattern.
2. method according to claim 1, it is characterised in that include the step of the offer integral mould：
Mold materials are provided；
The unit mould with nano-pattern is etched on mold materials；
Multiple unit moulds are tightly fixed on a surface plate so as to form an integral mould.
3. method according to claim 2, it is characterised in that described to be etched with nano-pattern on mold materials
After the step of unit mould, described multiple unit moulds are tightly fixed on a surface plate so as to form an integrated mould
Also include step before the step of tool：Side to unit mould is processed by shot blasting.
4. method according to claim 3, it is characterised in that the step that the side to unit mould is processed by shot blasting
In rapid, the roughness of the side of the unit mould after polishing is less than 50 nanometers.
5. method according to claim 1, it is characterised in that after the step of the offer integral mould, described by institute
The step of stating integral mould and be pressed on the photoresist layer so that the nano-pattern on unit mould is replicated in into the photoresist layer
Also include step before：Antiblocking layers are formed on the integral mould surface；The antiblocking layers are used to prevent the integrated mould
Tool and the photoresist layer adhesion.
6. method according to claim 5, it is characterised in that the antiblocking layers are alkyl silane molecular layer.
7. method according to claim 1, it is characterised in that described the step of the substrate surface forms photoresist layer
In, the thickness of the photoresist layer of formation is 10 nanometers~500 nanometers.
8. method according to claim 1, it is characterised in that described the step of the substrate surface forms photoresist layer
Afterwards, the described integral mould is pressed on the photoresist layer is replicated in the light with by the nano-pattern on unit mould
Also include step before the step of photoresist layer：The photoresist layer is heated to more than the softening temperature of photoresist.
9. method according to claim 8, it is characterised in that described that the integral mould is pressed on the photoresist layer
The step of so that the nano-pattern on unit mould is replicated in into the photoresist layer, includes：By the integral mould with 0.01 MPa
The pressure of this~10 megapascal (MPa) of card is pressed on the photoresist layer, and is kept for 0.1 hour~1 hour.
10. method according to claim 8, it is characterised in that described that the integral mould is pressed in the photoresist layer
On so that the nano-pattern on unit mould is replicated in into the photoresist layer the step of after, the step for separating the surface plate
Also included step before rapid：The photoresist layer is gradually cooled down to cause the temperature of the photoresist layer less than the glass of photoresist
Change temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611148304.8A CN106681102A (en) | 2016-12-13 | 2016-12-13 | Nano-imprinting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611148304.8A CN106681102A (en) | 2016-12-13 | 2016-12-13 | Nano-imprinting method |
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| Publication Number | Publication Date |
|---|---|
| CN106681102A true CN106681102A (en) | 2017-05-17 |
Family
ID=58869544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611148304.8A Pending CN106681102A (en) | 2016-12-13 | 2016-12-13 | Nano-imprinting method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110221519A (en) * | 2019-05-29 | 2019-09-10 | 重庆惠科金渝光电科技有限公司 | A kind of metallic mold for nano-imprint, board and its method for stamping |
| CN111408036A (en) * | 2020-04-24 | 2020-07-14 | 优微（珠海）生物科技有限公司 | Composite microneedle patch and preparation method thereof |
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| CN1700100A (en) * | 2004-05-07 | 2005-11-23 | 奥博杜卡特股份公司 | Lithography member and method thereof |
| JP2006269919A (en) * | 2005-03-25 | 2006-10-05 | Osaka Industrial Promotion Organization | Pattern forming method |
| CN204515178U (en) * | 2015-02-11 | 2015-07-29 | 华南理工大学 | A kind of inside surface has the reflecting element of micro-convex structure array |
| CN104838046A (en) * | 2012-12-18 | 2015-08-12 | Lpkf激光电子股份公司 | Method for the metallation of a workpiece and a layer structure made up of a workpiece and a metal layer |
-
2016
- 2016-12-13 CN CN201611148304.8A patent/CN106681102A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1700100A (en) * | 2004-05-07 | 2005-11-23 | 奥博杜卡特股份公司 | Lithography member and method thereof |
| JP2006269919A (en) * | 2005-03-25 | 2006-10-05 | Osaka Industrial Promotion Organization | Pattern forming method |
| CN104838046A (en) * | 2012-12-18 | 2015-08-12 | Lpkf激光电子股份公司 | Method for the metallation of a workpiece and a layer structure made up of a workpiece and a metal layer |
| CN204515178U (en) * | 2015-02-11 | 2015-07-29 | 华南理工大学 | A kind of inside surface has the reflecting element of micro-convex structure array |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110221519A (en) * | 2019-05-29 | 2019-09-10 | 重庆惠科金渝光电科技有限公司 | A kind of metallic mold for nano-imprint, board and its method for stamping |
| CN111408036A (en) * | 2020-04-24 | 2020-07-14 | 优微（珠海）生物科技有限公司 | Composite microneedle patch and preparation method thereof |
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