CN106674909A - Superhigh heat conduction-type epoxy resin composition used for fully encapsulated semiconductor device - Google Patents
Superhigh heat conduction-type epoxy resin composition used for fully encapsulated semiconductor device Download PDFInfo
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- CN106674909A CN106674909A CN201510756232.4A CN201510756232A CN106674909A CN 106674909 A CN106674909 A CN 106674909A CN 201510756232 A CN201510756232 A CN 201510756232A CN 106674909 A CN106674909 A CN 106674909A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/04—Epoxynovolacs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/08—Epoxidised polymerised polyenes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/02—Flame or fire retardant/resistant
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to an epoxy resin composition, and especially relates to a superhigh heat conduction-type epoxy resin composition used for a fully encapsulated semiconductor device, which has high heat conductivity and heat conductivity of more than 2.6 W/m.K. According to the invention, alumina powder is added in the superhigh heat conduction-type epoxy resin composition, heat conduction performance and filling property of the resin composition are improved, and the heat conduction requirement of the fully encapsulated semiconductor device can be satisfied, and the superhigh heat conduction-type epoxy resin composition used for the fully encapsulated semiconductor device has the heat conductivity requirement of more than 2.6 W/m.K. The superhigh heat conduction-type epoxy resin composition has necessary fluidity, high reliability and flame resistance performances.
Description
Technical field
The present invention relates to a kind of composition epoxy resin, more particularly to a kind of to have superelevation thermal conductivity, fit
For thermal conductivity the total incapsulation semiconductor devices of more than 2.6W/m.K ultra-high conducting heat type epoxy resin group
Compound.
Background technology
Total incapsulation semiconductor devices is mainly used for high-power electronic product.Total incapsulation semiconductor device
The back side (fin one side) of part is general relatively thin, is 0.5～0.7mm, if thickness is more than 0.7mm,
The thermal diffusivity of total incapsulation semiconductor devices can be had a strong impact on.When radiating bad, containing total incapsulation semiconductor
Operationally, temperature can reach more than 70 DEG C to the electronic product of device, and high temperature is by the triode to encapsulating
Job stability produce strong influence, and then significant impact is produced to the performance of whole electronic product.
Therefore, in order to improve thermal diffusivity, it is ensured that the functional reliability of electronic product, current total incapsulation semiconductor
The back side thickness of device is to slim development.Due to the special structure of total incapsulation semiconductor devices, its encapsulation is
A kind of typical asymmetric encapsulation, in encapsulation, composition epoxy resin flows device in front and back
Resistance it is different, flow velocity is different, easily causes the defects such as back pin hole, front step surface gap；With
The reduction of total incapsulation semiconductor back thickness, this flowing difference becomes big, and causing the probability of defect increases,
Encapsulation fraction defective is greatly increased.The thermal conductivity of epoxy-plastic packaging material in the market typically exists
1.8～2.2W/m.K, with the development of high power device, its power increases, and temperature when using rises,
Require to improve thermal diffusivity, so the thermal conductivity of epoxy-plastic packaging material seriously limits the development of total incapsulation semiconductor.
The content of the invention
The purpose of the present invention is, for the deficiencies in the prior art, so as to a kind of total incapsulation semiconductor devices to be used for
Ultra-high conducting heat type composition epoxy resin, by adding three in ultra-high conducting heat type composition epoxy resin
Aluminum oxide powder, improves the heat conductivility of composition, and the back of the body thickness that disclosure satisfy that total incapsulation device is more than
The requirement of thermal diffusivity during 0.7mm, and require ultra-high conducting heat type ring of the thermal conductivity in more than 2.6W/m.K
Epoxy resin composition.
The component of the ultra-high conducting heat type composition epoxy resin for total incapsulation semiconductor devices of the present invention
And content is：
The heat conduction system of the ultra-high conducting heat type composition epoxy resin for total incapsulation semiconductor devices of the present invention
Number (W/m.K) is 2.6～2.9.
Made in the ultra-high conducting heat type composition epoxy resin for total incapsulation semiconductor devices of the present invention
Epoxy resin is monomer, oligomer or the polymerization for having more than 2 epoxide groups in 1 epoxy molecule
Thing, its molecular weight and molecular structure are not particularly limited.Above-mentioned epoxy resin can be selected from o-cresol formaldehyde ring
Oxygen tree fat, bisphenol A type epoxy resin, bisphenol f type epoxy resin, linear phenolic epoxy resin, biphenyl
Type epoxy resin, dicyclopentadiene type epoxy resin, open chain aliphatic epoxy resin, aliphatic ring oxygen tree
One or more in fat, heterocyclic-type epoxy resin etc..
Made in the ultra-high conducting heat type composition epoxy resin for total incapsulation semiconductor devices of the present invention
Phenolic resin is monomer, oligomer or the polymer that 1 phenolic aldehyde intramolecular has more than 2 hydroxyls,
Its molecular weight and molecular structure are not particularly limited.Above-mentioned phenolic resin can be selected from phenol novolac tree
Fat and its derivative (derivative such as phenol alkyl phenolic resin), phenyl methylcarbamate linear phenolic resin and its derivative
The condensation of thing, monohydroxy or dihydroxy naphthlene phenolic resin and its derivative, paraxylene and phenol or naphthols
One or more in copolymer of thing, dicyclopentadiene and phenol etc..
Made in the ultra-high conducting heat type composition epoxy resin for total incapsulation semiconductor devices of the present invention
Alundum (Al2O3) powder be angle-style alundum (Al2O3) powder, spherical alundum (Al2O3) powder or they
Mixture.The meso-position radius (D50) of angle-style alundum (Al2O3) powder or spherical alundum (Al2O3) powder are all
For 20～30 microns.Additionally, the surface of described alundum (Al2O3) powder can use silane coupler
It is surface-treated.
Described fire retardant is the fire retardant that brominated epoxy resin coordinates with antimony oxide, wherein, bromine
It is 10 for the weight ratio of epoxy resin and antimony oxide：1.
Described curing accelerator, as long as the curing reaction of epoxy radicals and phenolic hydroxyl group, nothing can be promoted
It is particularly limited to.Described curing accelerator can be selected from imidazolium compounds, tertiary amine compound and organic phosphine
One or more in compound etc..
Described imidazolium compounds is selected from 2-methylimidazole, 2,4- methylimidazoles, 2- ethyl -4- methyl miaows
One kind or several in azoles, 2- phenylimidazoles, 2- phenyl -4-methylimidazole and 2- (heptadecyl) imidazoles etc.
Kind.
Described tertiary amine compound is selected from triethylamine benzyl group dimethylamine, Alpha-Methyl benzyl group dimethylamine, 2- (two
Methylamine ylmethyl) phenol, 2,4,6- tri- (dimethylamino methyl) phenol and 1,8- diazabicyclo (5,4,0)
One or more in endecatylene -7 etc..
Described organic phosphine compound selected from triphenylphosphine, trimethyl-phosphine, triethyl phosphine, tributylphosphine,
One or more in three (p-methylphenyl) phosphines and three (nonyl phenyl) phosphines etc..
Described releasing agent can be selected from the one kind or several in Brazil wax, synthetic wax and mineral matter wax
Kind.
Described inorganic ion scavenger is including but not limited to selected from hydrated metal oxide (such as
Bi2O3·3H2O), acid metal salt is (such as：Zr(HPO4)2·H2O) and magnalium compound (such as：
Mg6Al2(CO3)(OH)16·4H2O one or more in).
Described silane coupler can be selected from γ-glycidyl propyl ether trimethoxy silane, gamma-amino
In propyl-triethoxysilicane, γ mercaptopropyitrimethoxy silane and γ-aminopropyltrimethoxysilane
One or more.
Described colouring agent is carbon black.
Described low stress modified dose is liquid silicone oil, silicone rubber powder or their mixture etc..
The preparation of the ultra-high conducting heat type composition epoxy resin for total incapsulation semiconductor devices of the present invention
Method：The epoxy resin of 3～8wt% of the ultra-high conducting heat type composition epoxy resin total amount described in accounting for,
The phenolic resin of 1.5～4wt%, the alundum (Al2O3) powder of 85～94.5wt%, 0.3～0.9wt% it is fire-retardant
Agent, the curing accelerator of 0.01～0.04wt%, the releasing agent of 0.1～0.3wt%, 0.1～0.3wt% it is inorganic
Ion capturing agent, the silane coupler of 0.18～0.4wt%, the colouring agent of 0.1～0.3wt% and 0.2～0.8wt%
Low stress modified dose be well mixed, then by the mixture for obtaining in the double roller that temperature is 70～100 DEG C
Melting mixing is uniform on cylinder kneading machine, and the uniform material of melting mixing is removed from double roll mills
Natural cooling, crushing, obtain the described ultra-high conducting heat type asphalt mixtures modified by epoxy resin for total incapsulation semiconductor devices
The powder-material of oil/fat composition；Biscuit is further pre-formed as, is obtained for total incapsulation semiconductor devices
The moulding material of ultra-high conducting heat type composition epoxy resin.
The present invention is by for the ultra-high conducting heat type composition epoxy resin of total incapsulation semiconductor devices
Addition alundum (Al2O3) powder, substantially increases the thermal conductivity of ultra-high conducting heat type composition epoxy resin,
Disclosure satisfy that the back side thickness to total incapsulation semiconductor devices more than the ultra-high conducting heat type that 0.7mm is used
The requirement of composition epoxy resin, is a kind of excellent semiconductor-sealing-purpose material of heat conductivility.This
Bright ultra-high conducting heat type composition epoxy resin be also equipped with simultaneously necessary mobility, high reliability,
Anti-flammability.
The present invention is further illustrated with reference to embodiments, but this is only citing, is not to the present invention
Restriction.
Specific embodiment
Embodiment 1
O-cresol formaldehyde epoxy resin A1 (Japanese DIC Corporation systems " N-665 ") 8wt%
Phenol linear phenolic resin B1 (Japanese DIC Corporation systems " TD-2131 ") 4wt%
Angle-style alundum (Al2O3) powder D1 (D50 is 28 microns) 85wt%
(brominated epoxy resin is with the weight ratio of antimony oxide for brominated epoxy resin and antimony oxide
10：1) 0.9wt%
Curing accelerator 2-methylimidazole C 0.04wt%
Brazil wax 0.3wt%
Inorganic ion scavenger (Japanese TOAGOSEI Co., Ltd IXE500 (Bi2O33H2O))
0.3wt%
γ-glycidyl propyl ether trimethoxy silane 0.4wt%
Carbon black 0.3wt%
Liquid silicone oil 0.36wt%
Silicone rubber powder 0.4wt% (d50 is 1 μm)
After weighing and be well mixed according to said ratio, then in the double roller cylinders that temperature is 70～100 DEG C of preheatings
Melting mixing is uniform on kneading machine, the material being well mixed is removed into nature from double roll mills cold
But powder-material, is crushed to obtain, biscuit is pre-formed as, the shaping of excessive heat conductivity type composition epoxy resin is obtained
Material, and evaluated using the following method, the results are shown in Table 1.
Gel time：Hot plate method, by electric hot plate 175 ± 1 DEG C are heated to, and take the above-mentioned shapings of 0.3～0.5g
Material sample powder is placed on electric hot plate, and powder is terminal when gradually becoming colloidal state by fluid, reads institute
Take time.
Spiral flow length：By EMMI-1-66 helical flow metal patterns on transfer modling press
Tool is determined, and briquetting pressure is 70 ± 2Kgf/cm2Mold temperature takes above-mentioned moulding material at 175 ± 2 DEG C
20 ± 5g of sample is tested.
Melt viscosity：The excessive heat conductivity type ring for obtaining is determined using the heightization Flow Meter of Japanese Shimadzu Corporation
The melt viscosity of epoxy resin composition.Test condition：Mouth mold is 0.5 × 1.0mm, and load is 10kg,
Temperature is 175 DEG C.
Thermal conductivity factor：According to GB GB/T3139-82, the superelevation thermal conductivity for obtaining is determined using conductometer
The thermal conductivity factor of type composition epoxy resin.
Anti-flammability：Above-mentioned moulding material sample is made 1/16 English under the conditions of 175 DEG C/25Mpa
The sample block of very little thickness, then carries out solidify afterwards, finally by vertical combustion under conditions of 175 DEG C/6h
Method carries out flame retardant test according to GB4609-84.
Building-up property：The high-power total incapsulation semiconductor devices TO-220F of plastic packaging, internal porosity is used
Ultrasonic scanning is determined, and front step surface pore and back pore are estimated.The unqualified device Jing after inspection
Number of elements fewer show that building-up property is better.
Temperature rise：The high-power total incapsulation semiconductor devices TO-220F of plastic packaging (back of the body thickness 0.7mm) is logical
Electricity, tests the temperature at total incapsulation semiconductor devices back after identical voltage is powered, it is constant after temperature be
For temperature rise, temperature is lower to illustrate that temperature rise is better, and the thermal conductivity of epoxy-plastic packaging material is better.
Embodiment 2～8
The composition of excessive heat conductivity type composition epoxy resin is shown in Table 1, and preparation method is evaluated with embodiment 1
With embodiment 1, evaluation result is shown in Table 1 to method.
Comparative example 1～4
The composition of composition is shown in Table 2, and preparation method is commented with embodiment 1, evaluation method with embodiment 1
Valency the results are shown in Table 2.
The following institute of the composition beyond embodiment 1 adopted in embodiment 2～8, the composition of comparative example 1～4
Show.
Dicyclopentadiene type epoxy Resin A 2 (Japanese DIC Corporation systems " HP-7200 ")
Phenol alkyl phenolic resin B2 (Mitsui Chemicals, Inc. system " XLC-4L ")
Spherical alundum (Al2O3) powder D2 (d50 is 25 μm)
Crystallization angle-style SiO 2 powder D3 (d50 is 30 μm)
Table 1：The composition and evaluation result (by weight percentage) of example composition
Table 2：The composition and evaluation result (by weight percentage) of comparative example composition
Can be seen that by above-described embodiment and comparative example, all using the super-high heat-conductive of alundum (Al2O3) powder
The heat conductivility of composition epoxy resin is substantially better than the asphalt mixtures modified by epoxy resin for comprising only crystallization angle-style SiO 2 powder
Oil/fat composition, and building-up property is more stable, temperature rise is lower.
Claims (10)
1. a kind of ultra-high conducting heat type composition epoxy resin for total incapsulation semiconductor devices, is characterized in that,
The component and content of described ultra-high conducting heat type composition epoxy resin be：
Described low stress modified dose is liquid silicone oil, silicone rubber powder or their mixture.
2. the ultra-high conducting heat type epoxy resin for total incapsulation semiconductor devices according to claim 1
Composition, is characterized in that：The described ultra-high conducting heat type epoxy resin group for total incapsulation semiconductor devices
The thermal conductivity factor of compound is 2.6W/m.K～2.9W/m.K.
3. the ultra-high conducting heat type epoxy resin for total incapsulation semiconductor devices according to claim 1
Composition, is characterized in that：Described epoxy resin is selected from o-cresol formaldehyde epoxy resin, bisphenol type epoxy
Resin, bisphenol f type epoxy resin, linear phenolic epoxy resin, biphenyl type epoxy resin, bicyclic penta 2
In ene-type epoxy resin, open chain aliphatic epoxy resin, cycloaliphatic epoxy resin, heterocyclic-type epoxy resin
One or more.
4. the ultra-high conducting heat type epoxy resin for total incapsulation semiconductor devices according to claim 1
Composition, is characterized in that：Described phenolic resin is selected from phenol linear phenolic resin and its derivative, benzene
It is cresol novalac resin and its derivative, monohydroxy or dihydroxy naphthlene phenolic resin and its derivative, right
One or more in the copolymer of the condensation product, dicyclopentadiene and phenol of dimethylbenzene and phenol or naphthols.
5. the ultra-high conducting heat type asphalt mixtures modified by epoxy resin for total incapsulation semiconductor devices according to claim 1
Oil/fat composition, is characterized in that：Described alundum (Al2O3) powder is angle-style alundum (Al2O3) powder, ball
Shape alundum (Al2O3) powder or their mixture；Described angle-style alundum (Al2O3) powder or spherical three
The meso-position radius of aluminum oxide powder are all 20～30 microns.
6. the ultra-high conducting heat type asphalt mixtures modified by epoxy resin for total incapsulation semiconductor devices according to claim 1
Oil/fat composition, is characterized in that：Described fire retardant is that brominated epoxy resin coordinates with antimony oxide
Fire retardant, wherein, brominated epoxy resin is 10 with the weight ratio of antimony oxide：1.
7. the ultra-high conducting heat type asphalt mixtures modified by epoxy resin for total incapsulation semiconductor devices according to claim 1
Oil/fat composition, is characterized in that：Described curing accelerator selected from imidazolium compounds, tertiary amine compound and
One or more in organic phosphine compound.
8. the ultra-high conducting heat type asphalt mixtures modified by epoxy resin for total incapsulation semiconductor devices according to claim 7
Oil/fat composition, is characterized in that：Described imidazolium compounds selected from 2-methylimidazole, 2,4- methylimidazoles,
2-ethyl-4-methylimidazole, 2- phenylimidazoles, 2- phenyl -4-methylimidazole and 2- (heptadecyl) imidazoles
In one or more；
Described tertiary amine compound is selected from triethylamine benzyl group dimethylamine, Alpha-Methyl benzyl group dimethylamine, 2- (two
Methylamine ylmethyl) phenol, 2,4,6- tri- (dimethylamino methyl) phenol and 1,8- diazabicyclo (5,4,0)
One or more in endecatylene -7；
Described organic phosphine compound selected from triphenylphosphine, trimethyl-phosphine, triethyl phosphine, tributylphosphine,
One or more in three (p-methylphenyl) phosphines and three (nonyl phenyl) phosphines.
9. the ultra-high conducting heat type asphalt mixtures modified by epoxy resin for total incapsulation semiconductor devices according to claim 1
Oil/fat composition, is characterized in that：Described releasing agent is selected from Brazil wax, synthetic wax and mineral matter wax
In one or more；
Described silane coupler is selected from γ-glycidyl propyl ether trimethoxy silane, gamma-amino propyl group
In triethoxysilane, γ mercaptopropyitrimethoxy silane and γ-aminopropyltrimethoxysilane one
Plant or several；
Described colouring agent is carbon black；
Change of the described inorganic ion scavenger selected from hydrated metal oxide, acid metal salt and magnalium
One or more in compound.
10. the ultra-high conducting heat type asphalt mixtures modified by epoxy resin for total incapsulation semiconductor devices according to claim 9
Oil/fat composition, is characterized in that：Described hydrated metal oxide is Bi2O3·3H2O, described acidity
Slaine is Zr (HPO4)2·H2O, the compound of described magnalium is Mg6Al2(CO3)(OH)16·4H2O。
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| CN201510756232.4A CN106674909A (en) | 2015-11-09 | 2015-11-09 | Superhigh heat conduction-type epoxy resin composition used for fully encapsulated semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107698936A (en) * | 2017-08-21 | 2018-02-16 | 江苏中鹏新材料股份有限公司 | Fire-retardant epoxy resin composition, fire-retardant epoxy resin material and preparation method thereof |
| CN108164979A (en) * | 2017-12-25 | 2018-06-15 | 科化新材料泰州有限公司 | A kind of polyurethane modified epoxy resin composition for semiconductor packages |
| CN108389693A (en) * | 2017-12-26 | 2018-08-10 | 铜陵日科电子有限责任公司 | A kind of damping damp-proof type transformer base |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104497490A (en) * | 2014-12-22 | 2015-04-08 | 科化新材料泰州有限公司 | High-heat-conduction epoxy resin composition for complete wrapping device and preparation method of high-heat-conduction epoxy resin composition |
-
2015
- 2015-11-09 CN CN201510756232.4A patent/CN106674909A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104497490A (en) * | 2014-12-22 | 2015-04-08 | 科化新材料泰州有限公司 | High-heat-conduction epoxy resin composition for complete wrapping device and preparation method of high-heat-conduction epoxy resin composition |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107698936A (en) * | 2017-08-21 | 2018-02-16 | 江苏中鹏新材料股份有限公司 | Fire-retardant epoxy resin composition, fire-retardant epoxy resin material and preparation method thereof |
| CN108164979A (en) * | 2017-12-25 | 2018-06-15 | 科化新材料泰州有限公司 | A kind of polyurethane modified epoxy resin composition for semiconductor packages |
| CN108389693A (en) * | 2017-12-26 | 2018-08-10 | 铜陵日科电子有限责任公司 | A kind of damping damp-proof type transformer base |
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