CN106663505B

CN106663505B - The manufacture method and electric wiring component of electric wiring component

Info

Publication number: CN106663505B
Application number: CN201580043893.0A
Authority: CN
Inventors: 滩秀明; 上藤弘明; 滋野博誉; 坂田喜博; 松井佑树; 高山久弥
Original assignee: Nissha Printing Co Ltd
Current assignee: Nissha Printing Co Ltd
Priority date: 2014-11-05
Filing date: 2015-10-22
Publication date: 2018-01-23
Anticipated expiration: 2035-10-22
Also published as: KR102378773B1; TW201633332A; US10527938B2; TWI673728B; US20170307974A1; KR20170084006A; WO2016072274A1; CN106663505A

Abstract

The problem of the present invention is to be used as the material of blackening layer by material similar in exploration maintenance etching control and etching speed and copper wiring, so as to provide the manufacture method of the electric wiring component of the stepped construction with copper wiring and blackening layer and electric wiring component.On having as the method for solving problem of the present invention, the manufacture method of electric wiring component of the invention：The process of the stacked film 6 of Cu layers 3 and CuNO systems blackening layer (2a, 2b) is formed at least one interarea of base material, the predetermined region on stacked film 6 forms resist layer 4a process, removes the process in a part of region of stacked film 6 by making stacked film 6 be contacted with etching solution.

Description

The manufacture method and electric wiring component of electric wiring component

Technical field

The present invention relates to the manufacture method of electric wiring component and electric wiring component, it is related to and is for example formed at touch The electric wiring component of panel, electromagnetic shielding material.

Background technology

In recent years, with the function High Level of display device and using increasing, it is installed on the touch surface on display device surface The more and more necessary increase that the improvement of plate, electromagnetic shielding material is developed.Particularly, smart mobile phone, tablet terminal etc. are small-sized sets It is standby because the distance of user and display device is near, therefore the raising to the visual confirmatory of display device requires more and more higher. For example, in the field of touch panel on display device surface is installed on, study instead of always main as wiring material The conductive clear material (ITO, IZO etc.) used, use cost balancing good and resistance value 1~2 digit lower than ITO, IZO etc. Copper wiring.In the case of using copper wiring, when confirming touch panel from external visual, because the surface because of copper wiring is anti- Penetrate and can make it that the presence of copper wiring is noticeable, therefore in order to prevent it, Darkening process is carried out to the surface of copper wiring.In electricity In the field of magnetic wave shielding material, Darkening process also has been carried out to the surface of copper wiring pattern for the same purpose.

Touch panel, electromagnetic shielding material manufacturing process in, the manufacture method comprising Darkening process exists various The method of various kinds, it is known to method for example as shown below.

For example, having recorded a kind of manufacture method of transparent conductive material in patent document 1, it includes following process：Prepare The process of layered product, the layered product have the electric conductivity by including silver particles and adhesive resin in a surface side of transparent base The conductive pattern layer that composition is formed；And above-mentioned layered product is contacted with metal melanism treatment fluid, form the work of blackening layer Sequence, the metal melanism treatment fluid are the hydrochloric acid solution dissolved with tellurium, and (oxide conversion is dense for the concentration of the tellurium in the hydrochloric acid solution Degree) it is 0.01~0.45 weight %, concentration of hydrochloric acid is 0.05~8 weight %.

In addition, following method is recorded in patent document 2：At degreasing or the acid that conductive substrate is carried out in pretreatment tank The pretreatment such as reason, then in plating coating groove, metal is set to separate out on conductive substrate, and then, rinsing bowl, black is passed to successively Change treatment trough, rinsing bowl, antirust treatment groove, rinsing bowl, in each groove, carried out separating out in the metal surface on conductive substrate Melanism.

And then a kind of manufacture method of touch panel is recorded in patent document 3, it is characterised in that in accordance with the following steps Form the latticed elecroconductive thin line of upper sensor electrode, the latticed elecroconductive thin line have the layer of metal or alloy with And the blackening layer formed on this layer, the manufacture method include following step：Metal level or alloy are formed on transparent base The step of layer, the step for forming metal level or alloy-layer form electrode pattern the step of, on metal level or alloy-layer blackening layer Suddenly the step of, removing the blackening layer of the part beyond electrode.

Prior art literature

Patent document

Patent document 1:Japanese Unexamined Patent Publication 2011-82211 publications

Patent document 2:Japanese Unexamined Patent Publication 2013-239722 publications

Patent document 3:Japanese Unexamined Patent Publication 2012-94115 publications

The content of the invention

Invent problem to be solved

In using technology of the copper wiring (Cu layers) with the stepped construction of blackening layer, when by etching copper wiring, melanism When the different material of chemical property as layer carries out pattern formation, because copper wiring is different with the etching speed of blackening layer, because This etch quantity can produce deviation, and such case can throw into question.For example, the etching speed of (if A) copper wiring is than blackening layer Etching speed is fast, then Cu layers are easily removed over a large area, therefore copper wiring attenuates, as a result, resistance can raise.Separately On the one hand, if the etching speed of (B) blackening layer is faster than the etching speed of copper wiring, blackening layer easily over a large area by except Go, therefore the part on the surface of copper wiring can not be covered by blackening layer and can exposed completely.Therefore, the mesh of the script of blackening layer I.e. restrain copper wiring surface reflection become insufficient.It is also contemplated that it is used separately the erosion for copper wiring pattern to be formed Liquid and the etching solution for melanism layer pattern to be formed are carved, but etching work procedure increases in this case, and process becomes complicated, this It is big problem.

Generally, blackening layer is more difficult to be etched than copper wiring, therefore causes above-mentioned (A), i.e., copper wiring attenuates, and resistance can increase Add.It is also contemplated that make an effort etching solution, but if using the strong etching solution of such as agent of erosion, then etching control step-down, When therefore wanting to apply to the thin copper wiring of the line width that requires in recent years, designed such line width can not be kept.

In view of such situation, it is an object of the present invention to by explore maintain etching control and etching speed with Material of the material similar in copper wiring as blackening layer, so as to provide electrically matching somebody with somebody for the stepped construction with copper wiring and blackening layer The manufacture method and electric wiring component of line components.

For solving the method for problem

Present inventor has performed removed by the use of Wet-type etching by the way that the Cu layers for being used as the material of copper wiring are entered with blackening layer The experiment in a part of region for the various films that row is laminated and formed, as a result it is found that as maintenance etching control and etches speed The material of degree and blackening layer similar in Cu, is preferred using the composition (CuNO, CuO, CuN) of CuNO systems.

Can solve the problem that the manufacture method of the electric wiring component of the invention of above-mentioned problem has following processes：In base material Process, the predetermined region shape on above-mentioned stacked film of Cu layers and the stacked film of CuNO systems blackening layer are formed at least one interarea Process into resist layer, by making above-mentioned stacked film be contacted with etching solution remove a part of region of above-mentioned stacked film Process.Because Cu layers are close with the etching speed of CuNO systems blackening layers, it is thus possible to remove Cu layers and CuNO so that passing through and etching The width of Cu layers and the similar width of the CuNO systems blackening layer remained for being a part of region of the stacked film of blackening layer and remaining. Therefore, it is possible to improve because Cu layers become it is narrow cause resistance raise or because blackening layer become it is narrow cause Cu layers to expose The problem of such.

In the manufacture method of above-mentioned electric wiring component, CuNO systems blackening layer is preferably CuNO blackening layers.Because energy Enough make the etching speed of copper wiring and blackening layer more close.

In the manufacture method of above-mentioned electric wiring component, CuNO blackening layers are further preferably set to CuNxOy layers (0.01 ≤ x≤0.05,0.01≤y≤0.35).

In the manufacture method of above-mentioned electric wiring component, the process of above-mentioned CuNO systems blackening layer is formed preferably by least Exist and Cu is sputtered in the atmosphere of nitrogen and oxygen to carry out.Thereby, it is possible to be readily formed to contain the Cu layers of nitrogen and oxygen atom That is CuNO systems blackening layer.

In the manufacture method of above-mentioned electric wiring component, preferably first is formed at least one interarea of above-mentioned base material CuNO systems blackening layer, form Cu layers on the first CuNO systems blackening layer, the 2nd CuNO systems blackening layer is formed on the Cu layers.

In the manufacture method of above-mentioned electric wiring component, total thickness of the CuNO systems blackening layer in above-mentioned stacked film is preferred For 10~400nm.

In the manufacture method of above-mentioned electric wiring component, preferably by the process in a part of region for removing above-mentioned stacked film Lattice is made in above-mentioned stacked film.By the way that Cu layers and CuNO systems blackening layer are formed as into lattice, so as to improve The light transmission rate of electric wiring component, it is thus possible to suppress reflectivity.

Can solve the problem that the electric wiring component of the invention of above-mentioned problem has base material and at least one of the base material The stacked film formed on interarea, the stacked film include Cu layers and CuNO systems blackening layer and form pattern.

In above-mentioned electric wiring component, above-mentioned CuNO systems blackening layer is preferably CuNO blackening layers.

In above-mentioned electric wiring component, above-mentioned CuNO blackening layers are preferably CuNxOy layers (0.01≤x≤0.05,0.01≤y ≤0.35)。

Can solve the problem that the manufacture device of the electric wiring component of above-mentioned problem has：Closed shell, it is formed at the closed housing It is internal base material rolls out reel, base material batches reel, is formed in the closed shell first compartment, adjacent with the first compartment Second compartment, threeth compartment adjacent with the second compartment, be each equipped with Cu targets in the compartment of above-mentioned first compartment~the 3rd Material, introducing port of at least one compartment formed with oxygen and/or nitrogen in the compartment of above-mentioned first compartment~the 3rd.

In the manufacture device of above-mentioned electric wiring component, it is desirable to which above-mentioned introducing port is formed at above-mentioned first compartment and the 3rd Compartment.

In addition, the present inventor etc. as be described hereinafter shown in embodiment, have studied the bar in the import volume for changing oxygen and nitrogen Part simultaneously utilizes the extinction coefficient and reflectivity for sputtering when forming various blackening layers, each blackening layer.The result is that understand if made Blackening layer of the extinction coefficient below more than 1.0 1.8 obtained from the ratio of components that gas is imported as controlling, then can suppress anti- Penetrate rate.And it is found that, by addition to such blackening layer, being also laminated the refractive index dielectric layer different from blackening layer, So as to further suppress reflectivity.

(2955)

The objective of the manufacture method of electric wiring component i.e., now is have：On at least one interarea of base material Form the process for being sequentially laminated with Cu layers and the stacked film of CuNO systems blackening layer, the predetermined region on stacked film forms resist Layer process, by stacked film is contacted with etching solution so as to remove stacked film not by resist layer covering region work Sequence, in base material and form the process that dielectric layer is formed on the stacked film of pattern, CuNO systems blackening layer wavelength 400nm~ Extinction coefficient during 700nm is less than more than 1.0 1.8.In the manufacture method of the electric wiring component of the present invention, due to using erosion Speed is carved with the close CuNO systems blackening layer of Cu layers as blackening layer, therefore even if etching removes Cu layers and CuNO systems blackening layer A part of region of stacked film, it is also possible that the Cu layers of residual and the respective similar width of CuNO systems blackening layer.In addition, this hair In the manufacture method of bright electric wiring component, using extinction coefficient when the wavelength region of luminous ray is 400nm~700nm For less than more than 1.0 1.8 CuNO systems blackening layer, therefore it can integrally suppress reflectivity in the wavelength region.And then in order to anti- The only reflection of luminous ray, dielectric layer is laminated with base material and stacked film, thus enable to reflectivity turn into 5% with Under.

In the manufacture method of the above-mentioned electric wiring component of the stacking refractive index dielectric layer different from blackening layer, electricity is situated between Matter layer is also preferably SiO₂Layer.Because SiO₂Easy to manufacture, structure are also stablized, therefore are easily processed.

Furthermore it is possible to the objective for solving the electric wiring component of the invention of above-mentioned problem can be：With base material, Cu layers and CuNO systems blackening layer are sequentially laminated with least one interarea of the base material and forms the stacked film of pattern, in base material With the dielectric layer formed on the stacked film for foring pattern, above-mentioned CuNO systems blackening layer disappearing in wavelength 400nm~700nm Backscatter extinction logarithmic ratio is less than more than 1.0 1.8.The electric wiring component of the present invention is due to using etching speed and CuNO systems similar in Cu layers Blackening layer also can as blackening layer, therefore even if etching removes a part of region of Cu layers and the stacked film of CuNO systems blackening layer Enough Cu layers and the respective similar width of CuNO systems blackening layer for causing residual.In addition, in the electric wiring component of the present invention, use CuNO system blackening layer of the extinction coefficient when the wavelength region of luminous ray is 400nm~700nm for less than more than 1.0 1.8, because This can suppress the overall reflectivity of the wavelength region.And then in order to prevent the reflection of luminous ray, on base material and stacked film Dielectric layer is laminated with, therefore it is less than 5% to enable to reflectivity.

In above-mentioned electric wiring component, dielectric layer is also preferably SiO₂Layer.Because SiO₂Easy to manufacture, structure It is stable, therefore be easily processed.

In above-mentioned electric wiring component, total thickness of CuNO systems blackening layer and dielectric layer is also preferably below 100nm. Because if total thickness of CuNO systems blackening layer and dielectric layer is used for FPC (flexible printing bases more than 100nm Plate) etc. conducting particles in the base material ACF (anisotropic conductive film) that is electrically connected and mechanically connects with Cu layers be difficult to Penetrate CuNO system's blackening layers and dielectric layer, it is difficult to carry out the electrical connection of base material and Cu layers.

The effect of invention

In the present invention, because Cu layers are close with the etching speed of CuNO systems blackening layers, therefore by etch remove Cu layers with A part for the stacked film of CuNO systems blackening layer, so as to make the width of the Cu layers of residual and the CuNO systems blackening layer of residual Similar width.Therefore, it is possible to improve because high on resistance caused by Cu layers become narrow, or because blackening layer become it is narrow lead The problem of Cu layers of cause expose, and the increase of the reflected light from Cu layers is such.Further, since CuNO systems blackening layer and Cu layers Etching speed is close, thus without carrying out being divided into multiple Wet-type etching to each layer of Cu layers and blackening layer as in the past.

Brief description of the drawings

Fig. 1 is the plan of the electrostatic capacity type touch sensor involved by embodiment of the present invention.

Fig. 2 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Fig. 3 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Fig. 4 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Fig. 5 is section for the sputter equipment that can be applied in the manufacture method of the electric wiring component of embodiment of the present invention Face figure.

Fig. 6 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Fig. 7 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Fig. 8 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Fig. 9 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Figure 10 is the process sectional view of the manufacture method for the electric wiring component for having used common blackening layer.

Figure 11 is the process sectional view of the manufacture method for another electric wiring component for having used common blackening layer.

Figure 12 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Figure 13 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Figure 14 is the sectional view of the electric wiring component involved by another embodiment of the present invention.

Figure 15 is the sectional view of the electric wiring component involved by another embodiment of the present invention.

Figure 16 is the optical microscope photograph on the surface of electric wiring component corresponding with Fig. 9.

Figure 17 is the optical microscope photograph on the surface of electric wiring component corresponding with Figure 10.

Figure 18 is the optical microscope photograph on the surface of electric wiring component corresponding with Figure 11.

The depth on the surface away from the tested film for being used as measure object that Figure 19 represents to obtain by XPS analysis obtains with measure Atomic density (%) relation.

Figure 20 is after being etched to sample used in embodiment, from the SEM photograph of CuN blackening layers side shooting.

Figure 21 is after being etched to sample used in embodiment, from the SEM photograph of CuNO blackening layers side shooting.

Figure 22 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Figure 23 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Figure 24 is the sputtering that can be applied in the manufacture method of the electric wiring component involved by embodiment of the present invention The sectional view (a part of side view) of device.

Figure 25 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Figure 26 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Figure 27 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Figure 28 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Figure 29 is the process sectional view of the manufacture method of the electric wiring component involved by embodiment of the present invention.

Figure 30 is the sectional view of another electric wiring component involved by embodiment of the present invention.

Figure 31 is the sectional view of another electric wiring component involved by embodiment of the present invention.

Figure 32 is the sectional view of another electric wiring component involved by embodiment of the present invention.

Figure 33 is the sectional view of another electric wiring component involved by embodiment of the present invention.

Figure 34 is the schematic diagram of the assay method for the one side reflectivity and transmitance for representing sample involved in the present invention.

Figure 35 is the schematic diagram of the assay method for the one side reflectivity and transmitance for representing sample involved in the present invention.

Figure 36 is the chart of extinction coefficient of the expression embodiment 1 involved in the present invention in wavelength 400nm~700nm.

Figure 37 is the chart of extinction coefficient of the expression comparative example 1 involved in the present invention in wavelength 400nm~700nm.

Figure 38 is the chart of extinction coefficient of the expression comparative example 2 involved in the present invention in wavelength 400nm~700nm.

Figure 39 is the chart of reflectivity of the expression embodiment 1 involved in the present invention in wavelength 400nm~700nm.

Figure 40 is the chart of reflectivity of the expression comparative example 1 involved in the present invention in wavelength 400nm~700nm.

Figure 41 is the chart of reflectivity of the expression comparative example 2 involved in the present invention in wavelength 400nm~700nm.

Figure 42 is the chart of reflectivity of the expression comparative example 3 involved in the present invention in wavelength 400nm~700nm.

Figure 43 is the chart of reflectivity of the expression comparative example 4 involved in the present invention in wavelength 400nm~700nm.

Figure 44 is the chart of reflectivity of the expression comparative example 5 involved in the present invention in wavelength 400nm~700nm.

Figure 45 is the chart of reflectivity of the expression comparative example 6 involved in the present invention in wavelength 400nm~700nm.

Figure 46 is the chart of reflectivity of the expression comparative example 7 involved in the present invention in wavelength 400nm~700nm.

Figure 47 is the chart of reflectivity of the expression comparative example 8 involved in the present invention in wavelength 400nm~700nm.

Embodiment

Hereinafter, more specific description is carried out to the present invention based on embodiment, the present invention is not no doubt by following embodiments Limitation, can apply certainly in the range of it may conform to the purport of front and rear record change and implement, they are all contained in this hair In bright technical scope.Further, since the understanding to feature of present invention is preferentially promoted, therefore the size of the various components in accompanying drawing Ratio is sometimes different from actual size ratio.

The purposes such as touch panel, electromagnetic shielding material are the invention be not limitedly applied to, can also be applied to that there is CuNO It is the electric wiring component of blackening layer, here, the present invention will be described exemplified by enumerating electrostatic capacity type touch sensor.

Fig. 1 is that an example of the electric wiring component of the present invention is the plan of electrostatic capacity type touch sensor 100. For example it is made up of as shown in figure 1, the electrostatic capacity type touch sensor 100 involved by present embodiment mainly possesses makrolon Resin sheet 111, be formed at the surface of resin sheet 111 be used for detect longitudinal key input conductive part 112, be formed at resin sheet 111 back sides be used to detect the conductive part 113 of horizontal key input, connector portion 115, by each conductive part 112,113 with being connected The lead electrode 114 that device portion 115 connects.Connector portion 115 is connected with control unit 116, electrostatic capacity type touch sensor 100 Action is controlled by control unit 116.Each conductive part 112,113 is in order that light can pass through, therefore such as the magnified partial view in Fig. 1 It is shown, be formed as lattice.In addition to lattice, candy strip may be formed as, striped is in wavy wave Pattern and the punched hole pattern with multiple holes.

Each conductive part 112,113 for being formed at the surface of resin sheet 111 and the back side is formed by Cu layers, in order to suppress to be made by Cu layers Into light reflection, each conductive part 112,113 formed blackening layer.Formed with each conduction on the surface of resin sheet 111 and the back side The form in portion 112,113 can only apply an example of the electrostatic capacity type touch sensor of the present invention, below, say It is bright that Cu layers and the process of the stacked film of CuNO systems blackening layer are formed at least one interarea of resin sheet 111 (base material) The present invention.

1. on etching control

The manufacture method of electric wiring component involved by present embodiment has following processes：(1-1) in base material extremely Predetermined region shape of the Cu layers with the process, (1-2) of the stacked film of CuNO systems blackening layer on stacked film is formed on a few interarea Process, (1-3) into resist layer remove a part of region (Cu layers of stacked film by making etching solution be contacted with stacked film A part of region and CuNO systems blackening layer a part of region) process.In the present invention " CuNO systems blackening layer " be containing Cu, N (nitrogen) and/or the inevitable impurity of O (oxygen) and remainder compound, typically CuNO, Cu₃N、 CuO、Cu₂O each composition.

In the process for making etching solution be contacted with the stacked film comprising Cu layers and CuNO systems blackening layer, due to CuNO systems melanism Etching speed when passing through Wet-type etching of layer is close, therefore passes through the Wet-type etching of certain time, Cu layers and CuNO systems melanism Layer is corroded by equal extent.Thereby, it is possible to improve the resistance caused by Cu layers become narrow to raise or because of blackening layer Cu layers expose caused by becoming narrow and the reflected light from Cu layers increases the problem of such.

In addition, the process for forming the process of Cu layers in above-mentioned operation and forming CuNO systems blackening layer, without specific Sequentially, in no particular order.Its purport is, at least 1 layer of Cu layer and at least 1 layer of CuNO systems blackening layer are formed by these processes, So as to form the stacked film of Cu layers and CuNO systems blackening layer at least one interarea of base material.

Hereinafter, for the electric wiring component involved by present embodiment manufacture method preference, entered using accompanying drawing Row describes in detail.Fig. 2~4 are (above-mentioned to represent a part for the manufacture method of the electric wiring component involved by present embodiment (1) process sectional view).

The process that (1-1) forms Cu layers and the stacked film of CuNO systems blackening layer

As shown in Fig. 2 first, the first CuNO systems blackening layer 2a is formed at least one interarea of base material 1.Then, such as Shown in Fig. 3, Cu layers 3 are formed on the first CuNO systems blackening layer 2a.And then as shown in figure 4, the 2nd CuNO is formed on Cu layers 3 It is blackening layer 2b.By these processes, the stacking of Cu layers and CuNO systems blackening layer is formed at least one interarea of base material 1 Film.CuNO systems blackening layer at least one interarea of base material 1 include at least 1 layer, as shown in figure 3, can with only 1 layer, 2 layers can be included as shown in Figure 4.Wherein, total thickness of the CuNO systems blackening layer formed at least one interarea of base material Preferably 10~400nm.More preferably 18~200nm, more preferably 36~120nm.For CuNO systems blackening layer every 1 Layer, more preferably preferably 5~200nm, more preferably 9~100nm, 18~60nm.

Blackening layer has the function that to make the strength retrogression of the light inside propagation, mainly also has to utilize and reflects the dry of visible ray The effect that relates to and suppress the factor of reflected light.In order to which interference as utilizing weakens the intensity of reflection visible ray, thickness is preferred It is set to above range.Hereinafter, the first CuNO systems blackening layer 2a is referred to as CuNO systems blackening layer 2a sometimes, the 2nd CuNO systems is black Change layer 2b and be referred to as CuNO systems blackening layer 2b.

In order to ensure required electrical conductivity, the thickness of Cu layers 3 is, for example, more than 20nm, preferably more than 40nm, enters one Step is preferably more than 60nm.But if Cu layers 3 are blocked up, etching spent time can excessively, therefore for example, 2 μm with Under, preferably less than 1 μm, more preferably below 400nm.

As the material for base material 1, as long as electron opaque material is just not particularly limited, such as can be used poly- to benzene two Formic acid glycol ester system resin (PET), aliphatic cyclic polyolefin-based resins (COP), glass, polycarbonate-based resin (PC), Acrylic resin (PMMA) etc..In the case that electric wiring component is used for into display device, base material 1 is desirably substantially transparent 's.The thickness of base material 1 is not particularly limited, for example, 15 μm~200 μm, be preferably 20 μm~150 μm, more preferably 25 μm~125 μm.

To formed Cu layers 3, CuNO systems blackening layer 2a, 2b method be not particularly limited, can by sputtering method, vapour deposition method, CVD etc. is formed, in addition it is also possible to by being modified the surface of Cu layers to be formed.In present embodiment, as example Son, illustrate to have used the stacked film of sputtering method to form method.

Fig. 5 is that the manufacture device of the electric wiring component of present embodiment is the sectional view of sputter equipment 50.Sputter equipment 50 have closed shell 51, the base material being formed in closed shell 51 rolls out reel 52, base material batches reel 53, it is closed to be formed at The first compartment 55 separated by next door 54 in housing 51, the second compartment 56 adjacent with first compartment 55 and second compartment 56 The 3rd adjacent compartment 57.Cu targets 58 are each equipped with the compartment 57 of first compartment 55~the 3rd.In addition, in first compartment 55 With introducing port 59 of the 3rd compartment 57 formed with oxygen and/or nitrogen.In second compartment 56 formed with for touching Cu targets 58 The introducing port 60 of the argon gas hit.Alternatively, it is also possible to supply argon gas at introducing port 59.At introducing port 59, introducing port 60, except Beyond argon gas, hydrogen (H can also be imported in order to promote nitrogen to enter blackening layer₂).In addition, it is provided with closed shell 51 Low vacuum suction port 66 and high vacuum suction port 67.Low vacuum suction port 66 is (not shown) even with such as oil sealing rotary vacuum pump Connect, can be by fast decompression in closed shell 51 to vacuum to a certain degree.High vacuum suction port 67 and such as turbo-molecular Pump connection (not shown), the condition of high vacuum degree for the degree that can be sputtered can will be decompressed in closed shell 51.

Above-mentioned base material 1 is maintained at base material with web-like and rolled out on reel 52.Base material 1 rolls out reel 52s from base material, via Nip rolls 61, inner roller 62, nip rolls 63, finally it is winding to base material and batches on reel 53.

The Cu targets 58 configured in the compartment 57 of first compartment 55~the 3rd, in order to apply defined current potential, pass through wire 64 are connected with controller 65.As sputtering method, DC sputterings, the application for putting on DC voltage between 2 electrodes can be used The RF sputterings and magnetron sputtering, ion beam sputtering of high frequency.

Release for rolling out reel 52 from base material and into the base material 1 in first compartment 55, pass through the sputtering of Cu targets 58 Carry out film forming Cu layer.Now, first compartment 55 receives the supply of oxygen and/or nitrogen from introducing port 59, thus on base material 1 into Film is the Cu layers i.e. CuNO systems blackening layer 2a (Fig. 2) for containing oxygen (O) and/or nitrogen (N) atom.

Then, if base material 1 enters second compartment 56, the sputtering of Cu targets 58, film forming Cu layers 3 (Fig. 3) are passed through. In two compartments 56, the introducing port 60 of the argon gas as non-active gas is only formd, therefore substantially oxygen and/or nitrogen will not enter In Cu layers 3 (in addition to inevitably mixed situation).

Then, if base material 1 enters the 3rd compartment 57, the sputtering of Cu targets 58, film forming Cu layer are passed through.With first every Similarly, the 3rd compartment 57 receives the supply of oxygen and/or nitrogen from introducing port 59 to the situation of room 55, thus on base material 1 into Film is the Cu layers i.e. CuNO systems blackening layer 2b (Fig. 4) for containing oxygen (O) and/or nitrogen (N) atom.By above process, formed The stacked film 6 of Cu layers 3 and CuNO systems blackening layer (2a, 2b).

According to same step, Cu layers 3 and CuNO systems blackening layer (2a, 2b) can be also formed in the rear side of base material 1 Stacked film 6.Rolled up for example, will be completed to be winding to base material after above-mentioned Fig. 4 process and batch base material on reel 53 with base material 1 Rear side is arranged on base material towards the mode of the side of Cu targets 58 and rolled out on reel 52.Reel 52, which is rolled out, from base material draws base material 1, warp By nip rolls 61, inner roller 62, nip rolls 63, finally it is arranged at base material and batches reel 53.Sputter equipment 50 is run in this condition, from And it can also form layered product 6 in the rear side of base material 1 as shown in Figure 6.

From the viewpoint of effectively using a manufacture device, it can be preferable to carry out as described above rolling up base material from base Material, which batches reel 53 and moved, to be filled to base material and rolls out method on reel 52, is gone out from the viewpoint for the manufacturing speed for accelerating electric wiring component Hair, can set in the same closed shell 51 can also the rear side film forming of base material 1 compartment (for example, then the 3rd The compartment (not shown) of 4th compartment of compartment 57~the 6th), can also be in addition to sputter equipment 50, separately setting can also be Another sputter equipment (not shown) of the rear side film forming of base material 1.

In described above, the introducing port 59 of oxygen and/or nitrogen is set in the compartment 57 of first compartment 55 and the 3rd, be in order to Stacked film 6 is sequentially formed according to the CuNO systems blackening layer 2a/Cu layer 3/CuNO system blackening layer 2b shown in Fig. 4, can be according to layer Folded order suitably changes the position of introducing port 59, such as changes to second compartment 56.

The process that the predetermined region of (1-2) on stacked film 6 forms resist layer

Fig. 7~8 are a part (above-mentioned (3) for the manufacture method for representing the electric wiring component involved by present embodiment Process) process sectional view.First, photoresist layer 4 is formed uniformly on stacked film 6 as shown in Figure 7.For The material of photoresist layer 4 does not also limit, and can use material, the material of solid-like (membranaceous) of semi-solid (paste-like) Material.

Then, photoresist layer 4 is formd into pattern as shown in Figure 8 using photoetching process etc..It is partially removed in light The process for causing resist layer, typically, is realized as follows：To a part of irradiation light of photoresist layer, development is utilized Liquid removes the part (positive light anti-etching agent) of irradiation light, or, utilize part (the minus light of the no irradiation light of developer solution removing Cause resist).

The removal step of the part of (1-3) stacked film 6

Fig. 9 is the process section of a part for the manufacture method for representing the electric wiring component involved by present embodiment Figure.By making etching solution be contacted with the stacked film 6 not covered by photoresist layer 4a to expose, so as to remove stacked film 6 part (part for Cu layers and a part for CuNO systems blackening layer).For etching solution used, as long as can be to Cu The both sides of layer and CuNO systems blackening layer, which are etched, to be just not particularly limited, and in order to maintain a certain degree of etching control, is needed Etching speed is controlled, therefore, it is intended that adjustment temperature, concentration, pH etc..

In present embodiment, due to using CuNO systems blackening layer (2a, 2b) to be used as blackening layer, thus with Cu etching speed Difference is small, as shown in figure 9, because Cu layers 3 and CuNO systems blackening layer (2a, 2b) is etched at a same speed, thus stacked film 6 is whole When being formed be open along vertical direction together, but using the blackening layer beyond CuNO systems, because the etching speed difference with Cu is big, because And it is difficult to turn into etching shape as shown in Figure 8.In order to refer to, Figure 16 is the surface of electric wiring component corresponding with Fig. 9 Optical microscope photograph.The width of Cu layers 3 and the width of CuNO systems blackening layer (2a, 2b) are almost identical, do not observe from Cu The reflected light of layer 3.

Figure 10 and Figure 11 is (temporary by the etching speed blackening layer slower than Cu beyond CuNO systems blackening layer (2a, 2b) for that will use When be referred to as " blackening layer 2c ", the etching speed blackening layer faster than Cu is temporarily referred to as " blackening layer 2d ") material as blackening layer When, the process sectional view of shape amplification after the etching of stacked film 6.

In examples of the blackening layer 2c (the etching speed blackening layer slower than Cu) as Figure 10 of blackening layer is used, blackening layer 2c is not easy to be etched, therefore the etching of Cu layers 3 is carried out during this period.Because Cu layers 3 are removed on vast area, thus copper is matched somebody with somebody Line attenuates, as a result, resistance can raise.In order to refer to, Figure 17 is the surface of electric wiring component corresponding with Figure 10 Optical microscope photograph.Relative to the width of Cu layers 3, blackening layer 2c width remains wide.

On the contrary, using examples of the blackening layer 2d (the etching speed blackening layer faster than Cu) as Figure 11 of blackening layer In, blackening layer 2d etching can be carried out, and cause above Cu layers 3 or following main surface is exposed.Therefore, the script of blackening layer Purpose is that the surface reflection for restraining Cu layers (copper wiring) becomes insufficient.In order to refer to, Figure 18 electrically matches somebody with somebody to be corresponding with Figure 11 The optical microscope photograph on the surface of line components.Blackening layer 2d width is exposed by skiving, Cu layers 3, it was observed that from Cu layers 3 Reflected light.

As final process, preferably as shown in figure 12, the photoresist layer 4a of residual is removed using cleaning fluid.In addition, It is preferred that as shown in figure 13, substrate 1 and stacked film 6 are covered with protective layer 5, protect electric wiring component not by the water from outside Divide, oxygen infringement.

In addition, reflectivity during formed with CuNO systems blackening layer (2a, 2b) is not less than forming CuNO systems blackening layer (2a, 2b) When reflectivity (reflectivity of Cu layers 3).This is due to reflected light as described above by interference effect and the effect that mutually weakens, Due also to CuNO systems blackening layer (2a, 2b) itself have the function that to make light intensity decays.Formed with CuNO systems blackening layer (2a, 2b) When reflectivity, for example, reflectivity of Cu layers 3 less than 60%, more preferably less than 30%, more preferably 15% with Under.

The Rotating fields of the stacked film 6 of electric wiring component involved by present embodiment are set to CuNO systems blackening layer 2a/Cu Layer 3/CuNO system blackening layer 2b, but not limited to this, as long as comprising at least 1 layer of Cu layer and at least 1 layer of CuNO systems blackening layer just can Similarly implement.Figure 14 is the sectional view of the electric wiring component involved by another embodiment of the present invention, as shown in figure 14, CuNO systems blackening layer 2 can be provided only on the side opposite with base material 1.In this case, due to the CuNO with the opposite side of base material 1 It is the time length of blackening layer 2 and etching solution contact, therefore, using the CuNO systems blackening layer 2 close with the etching speed of Cu layers simultaneously It can not necessarily form the opening of straight shape, relative to the etching speed of Cu layers 3 be 2~5 times preferably using etching speed CuNO systems blackening layer 2.

Figure 15 is the sectional view of the electric wiring component involved by another embodiment of the present invention, as shown in figure 15, CuNO systems blackening layer 2 can also be provided only on visible person side relative to Cu layers 3.

2. suppress on more excellent reflectivity

In addition, implementing the electrode as Darkening process as the patent document 1~3 of prior art, there is reduction pair The effect of the reflectivity of a part of wavelength of luminous ray, but not reflectivity is integrally restrained to the wavelength region of luminous ray, There is still room for improvement for the method that low reflectionization for obtaining the better electrode of observability is handled.

In view of such situation, the present inventor etc. provide the manufacture method and electric wiring component of electric wiring component, The electric wiring component as so far illustrate as not only maintain good etching control and eliminate copper wiring with it is black Change the etch quantity deviation of layer, and then can integrally suppress reflectivity in the wavelength region of luminous ray.

Electric wiring component now is due in the wavelength region of luminous ray being 400nm~700nm using extinction coefficient When for less than more than 1.0 1.8 CuNO systems blackening layer, therefore can suppress in the overall reflectivity of the wavelength region.And then it is Prevent the reflection of luminous ray and dielectric layer has also been laminated on base material and CuNO systems blackening layer, therefore enable to conduct The reflectivity of stacked film turns into less than 5%.

Each conductive part 112,113 on the surface for being formed at resin sheet 111 and the back side shown in Fig. 1 is formed by Cu layers, in order to Suppress, because light caused by Cu layers reflects, CuNO system's blackening layers and dielectric layer to be formed in each conductive part 112,113.In resin sheet 111 form of surface and the back side formed with each conductive part 112,113, it can only apply the electrostatic capacity type of the present invention One example of touch sensor, below, illustrate to be formed at least one interarea included in resin sheet 111 (base material) Cu layers with The present invention of the process of the stacked film of CuNO systems blackening layer and dielectric layer.

The manufacture method of electric wiring component involved by the embodiment has following processes：(2-1) in base material extremely The process for being sequentially laminated with Cu layers and the stacked film of CuNO systems blackening layer, (2-2) are formed on a few interarea in CuNO systems melanism Predetermined region on layer forms the process of resist layer, (2-3) by making etching solution and Cu layers and the layer of CuNO systems blackening layer Folded film is contacted so as to remove the process in the region not covered by above-mentioned resist layer of stacked film and (2-4) in base material and shape The process that dielectric layer is formed on into the stacked film of pattern, delustring system of the CuNO systems blackening layer in wavelength 400nm~700nm Number is less than more than 1.0 1.8.

In addition, the electric wiring component involved by embodiment of the present invention has base material, at least one master in the base material The stacked film for foring pattern that Cu layers and CuNO systems blackening layer form is stacked gradually on face and in base material and forms pattern Stacked film on the dielectric layer that is formed, extinction coefficient of the CuNO systems blackening layer in wavelength 400nm~700nm is more than 1.0 It is 1.8 following.

The present invention electric wiring component manufacture method and electric wiring component in, due to using etching speed with CuNO systems blackening layer similar in Cu layers is as blackening layer, thus even if etching removes a part of area of Cu floor and CuNO systems blackening layer Domain, it is also possible that the Cu layers of residual and the respective similar width of CuNO systems blackening layer.Further, since using extinction coefficient can When seeing the i.e. 400nm~700nm of wavelength region of light for less than more than 1.0 1.8 CuNO systems blackening layer, it is thus possible to suppress to exist The overall reflectivity of the wavelength region.And then in order to prevent the reflection of luminous ray, on base material and CuNO systems blackening layer upper strata Dielectric layer is laminated with, therefore enables to reflectivity to turn into less than 5%.

CuNO systems blackening layer in the present invention is inevitable containing Cu, N (nitrogen) and/or O (oxygen) and remainder Impurity compound, be CuNO, Cu typically₃N、CuO、Cu₂O each composition.Blackening layer have make what is internally propagated The effect of light intensity decays, but mainly have the function that to suppress the factor of reflected light using the interference for reflecting visible ray.

Dielectric layer increases the transmitance of luminous ray, reduces reflectivity.The minimum reflection wavelength of dielectric layer Refractive index and film thickness depending on dielectric layer material.In the present invention, due to by CuNO systems blackening layer and refractive index and the melanism The different dielectric layer of layer is combined, therefore suppresses low by reflectivity in wavelength 400nm~700nm of luminous ray.

The extinction coefficient of CuNO systems blackening layer involved in the present invention in wavelength 400nm~700nm is more than 1.0 1.8 Below.By the way that the presence ratio of the nitrogen in CuNO systems blackening layer is set into 0.8at%~4at%, is set to the presence ratio of oxygen 4at%~10at%, so as to make the extinction coefficient of CuNO systems blackening layer turn into less than more than 1.0 1.8.

Hereinafter, using accompanying drawing, for the embodiment party using the CuNO systems blackening layer that extinction coefficient is less than more than 1.0 1.8 The preference of the manufacture method of electric wiring component involved by formula is described in detail.Figure 22~Figure 23 is this embodiment party of expression The process sectional view of a part for the manufacture method of electric wiring component involved by formula.

(2-1) forms the process for being sequentially laminated with Cu layers and the stacked film of CuNO systems blackening layer

As shown in figure 22, Cu layers 22 are formed at least one interarea of base material 21.Secondly, as shown in figure 23, in Cu layers CuNO systems blackening layer 23 is formed on 22.By these processes, Cu layers 22 and CuNO are formed at least one interarea of base material 21 It is the stacked film of blackening layer 23.In addition, CuNO systems blackening layer 23 can be only 1 layer like that as shown in figure 23,2 can also be included Layer.But total thickness of the CuNO systems blackening layer formed at least one interarea of base material is preferably 5nm~150nm.More Preferably 12nm~115nm, more preferably 18nm~80nm.

Blackening layer also has the function that to make the light intensity decays internally propagated, but mainly has to utilize and reflect visible ray The effect of interference and suppress the factor of reflected light.If total thickness of CuNO systems blackening layer and dielectric layer more than 100nm, It is difficult to penetrate CuNO systems for the conducting particles in ACF that the base materials such as FPC are electrically connected and mechanically connected with Cu layers black Change layer and dielectric layer, base material to be difficult to electrically connect with Cu layers, therefore, the thickness of CuNO systems blackening layer 23 is preferably set to above-mentioned Scope.

CuNO systems blackening layer is also preferably CuNO blackening layers.Because the etching speed of Cu layers and blackening layer can be made more It is close.

In order to ensure required electrical conductivity, the thickness of Cu layers 22 is, for example, more than 20nm, preferably more than 40nm, further Preferably more than 60nm.But etching the spent time is excessive if Cu layers 22 are blocked up, therefore for example, less than 2 μm, it is excellent Elect less than 1 μm, more preferably below 400nm as.

As the material for base material 21, as long as electron opaque material is just not particularly limited, can be used for example poly- to benzene Naphthalate system resin (PET), aliphatic cyclic polyolefin-based resins (COP), glass, polycarbonate-based resin (PC), acrylic resin (PMMA) etc..When electric wiring component is used for into display device, base material 21 is desirably substantially transparent 's.The thickness of base material 21 is not particularly limited, for example, 15 μm~200 μm, preferably 20 μm~150 μm, more preferably 25 μm~125 μm.

Formation Cu layers 22, the method for CuNO systems blackening layer 23 are not particularly limited, and can pass through sputtering method, vapour deposition method, CVD The formation such as method, in addition it is also possible to by being modified the surface of Cu layers to be formed.In present embodiment, by way of example, explanation Method is formed using the stacked film of sputtering method.

Figure 24 is that the manufacture device of the electric wiring component of present embodiment is the sectional view of sputter equipment 250.Sputtering dress Putting 250 has：Closed shell 251, the base material being formed in closed shell 251 roll out reel 252, base material batches reel 253, by First compartment 255 that the next door 254 being formed in closed shell 251 separates, the second compartment 256 adjacent with first compartment 255. Cu targets 257 are configured with first compartment 255, second compartment 256.In addition, in first compartment 255 formed with for making argon gas The introducing port 258 of the argon gas collided with Cu targets 257.The introducing port of oxygen and/or nitrogen is also formed with second compartment 256 259, but argon gas can also be supplied.At introducing port 259, in addition to argon gas, or promotion nitrogen enters in blackening layer And import hydrogen (H₂)。

In addition, closed shell 251 is provided with low vacuum suction port 65 and high vacuum suction port 266.Low vacuum suction port 65 are connected with such as oil sealing rotary vacuum pump (not shown), can be by fast decompression in closed shell 251 to a certain degree of true Reciprocal of duty cycle.High vacuum suction port 266 is connected with such as turbomolecular pump (not shown), can will be decompressed to energy in closed shell 251 The condition of high vacuum degree of the degree enough sputtered.

Above-mentioned base material 21 is maintained at base material with web-like and rolled out on reel 252.Base material 21 rolls out reel 252s from base material, Via nip rolls 260, inner roller 261, nip rolls 262 and be finally winding to base material and batch on reel 253.

In the Cu targets 257 that 255~second compartment of first compartment 256 configures, in order to apply defined current potential, pass through wire 263 are connected with controller 264.As sputtering method, the DC for putting on DC voltage between 2 electrodes can also be used to splash Penetrate, apply the RF sputterings and magnetron sputtering, ion beam sputtering of high frequency.

Roll out rolling out reel 252 from base material and on the base material 21 in first compartment 255, pass through Cu targets 257 Sputter and film forming Cu layers (Figure 22).Because first compartment 255 is only formed with the introducing port 258 of the argon gas as non-active gas, Thus it will not substantially enter oxygen and/or nitrogen in Cu layers 22 (in addition to inevitably mixed situation).

Then, if base material 21 enters to second compartment 256, by the sputtering of Cu targets 257 and film forming Cu layer.This When, supply of the second compartment 256 due to receiving oxygen and/or nitrogen from introducing port 259, thus the film forming on Cu layers 22, Contain the Cu layers i.e. CuNO systems blackening layer 23 (Figure 23) of oxygen (O) and/or nitrogen (N) atom.That is, the work of CuNO systems blackening layer is formed Sequence, preferably carried out in it the atmosphere of nitrogen and oxygen at least be present by sputtering Cu.The presence ratio of nitrogen/oxygen for example may be used To be set to 21%/9%, 15%/12%.

According to same step, Cu layers 22 and CuNO systems blackening layer 23 can also be formed in the rear side of base material 21.For example, The process for being completed to above-mentioned Figure 23 is winding to base material batches base material on reel 53 and roll up with the rear side of base material 21 towards Cu The mode of the side of target 257 is arranged on base material and rolled out on reel 252.Reel 252 is rolled out from base material and draws base material 21, via nip rolls 61st, inner roller 62, nip rolls 63, finally it is arranged on base material and batches on reel 253.By running sputter equipment 250 in this condition, So as to as shown in figure 25, can also form Cu layers 22 and CuNO systems blackening layer 23 in the rear side of base material 21.

From the viewpoint of effectively using a manufacture device, it can also be preferable to carry out as described above rolling up base material from base material Batch reel 253 and move and be filled to base material and roll out method on reel 252, go out from the viewpoint for the manufacturing speed for accelerating electric wiring component Hair, can set in the same closed shell 251 can also the rear side film forming of base material 21 compartment (for example, then the Two compartments, the compartment (not shown) of the 3rd compartment~the 4th)；Can also be in addition to sputter equipment 250, setting in addition can also In another sputter equipment (not shown) of the rear side film forming of base material 21.

In described above, the introducing port 259 that oxygen and/or nitrogen are provided with second compartment 256 is in order to according to Figure 23 The order of shown Cu layer 22/CuNO systems blackening layer 23 is laminated them.

The process that the predetermined region of (2-2) on CuNO systems blackening layer forms resist layer

Figure 26~Figure 29 is the work of a part for the manufacture method for representing the electric wiring component involved by present embodiment Sequence sectional view.First, as shown in figure 26, the predetermined region on CuNO systems blackening layer is formed uniformly resist layer 210.For resisting The material of erosion oxidant layer 210 is not particularly limited, and can use material, the material of solid-like (membranaceous) of semi-solid (paste-like) Material.

Then, using photoetching process etc., resist layer 210 is formd into pattern like that as shown in figure 27.It is partially removed in resisting The process of oxidant layer is lost, typically, by a part of irradiation light to resist layer, utilizes the part of developer solution removing irradiation light (positive light anti-etching agent) is realized, or the part (negative type photoresist) of no irradiation light is removed by using developer solution To realize.

The process that (2-3) removes a part of region of Cu layers and CuNO systems blackening layer

As shown in figure 28, by making not covered Cu layers 22 and CuNO systems blackening layer 23 to expose by resist layer 210 Contacted with etching solution, so as to remove a part of region of a part for Cu layers 22 and CuNO systems blackening layer 23.For institute Etching solution, if the both sides that can etch Cu layers and CuNO systems blackening layer are just not particularly limited, but in order to a certain degree Ground maintains etching control, it is necessary to etching speed be controlled, for this reason it would be desirable to adjust temperature, concentration, pH etc..Remove Cu layers 22 and Behind a part of region of CuNO systems blackening layer 23, the resist layer 210 of residual is removed using cleaning fluid.

In process of the Cu layers 22 with a part of region of CuNO systems blackening layer 23 is removed, Cu layers 22 and CuNO systems blackening layer 23 also preferably form for lattice, candy strip, striped be wavy wave pattern and with multiple holes punching (punching) pattern.Thereby, it is possible to improve the light transmission rate of electric wiring component.

The process of (2-4) in base material and formation dielectric layer on the stacked film for foring pattern

As shown in figure 29, in the base material 21 exposed and formation dielectric layer 24 on the stacked film for foring pattern.I.e., electrically In Wiring construction element, Cu layers 22, CuNO systems blackening layer 23, dielectric layer 24 are sequentially laminated with from the side relative with base material.In order to Suppress the reflection of the light caused by Cu layers 22, CuNO systems blackening layer 23 is layered on Cu layers 22.In addition, by preventing from reflecting Effective dielectric layer 24 is further layered on base material 21 and the stacked film for foring pattern, so as to reduce as Cu layers 22nd, CuNO systems blackening layer 23 and the reflectivity of the entirety of dielectric layer 24.

The material of dielectric layer 24 is not particularly limited, and can use such as SiO, SiO₂、TiO₂、Al₂O₃、Ta₂O₅、 Nb₂O₅、ZrO₂、HfO₂、La₂O₃、Cr₂O₃、CeO₂、Y₂O₃, oxide, the CaF such as ZnO, ITO₂、MgF₂Deng fluoride, Si₃N₄Deng nitrogen Compound.Wherein, dielectric layer 24 is preferably SiO₂Layer.Because SiO₂Easy to manufacture, structure are also stablized, thus easily place Reason.

The thickness of dielectric layer 24 is preferably set to 10nm~200nm.More preferably 18nm~100nm, more preferably 36nm~70nm.It is also preferred that total thickness of CuNO systems blackening layer 23 and dielectric layer 24 is below 100nm.Because such as Total thickness of fruit CuNO systems blackening layer 23 and dielectric layer 24 exceedes 100nm, then CuNO systems blackening layer 23 and dielectric layer 24 Crimping become difficult, be not easy to turn on Cu layers 22.

On the method in base material 21 and formation dielectric layer 24 on the stacked film for foring pattern, with the shape on base material 21 Into Cu layers 22, CuNO systems blackening layer 23 method likewise it is possible to be formed by sputtering method, vapour deposition method, CVD etc..For example, If in the compartment of the sputter equipment of vacuum state, Si targets are sputtered while importing oxygen, then can be in the He of base material 21 The SiO as dielectric layer 24 is formed on CuNO systems blackening layer 23₂Layer.

For the electric wiring component with the electric wiring component different shape shown in Figure 29, one side 30~Figure 33 of reference picture While illustrate.In addition, in Figure 30~Figure 33 explanation, omitted the description for the part repeated with described above.Figure 30 ~Figure 33 represents the sectional view of the electric wiring component involved by embodiment of the present invention.

Electric wiring component shown in Figure 30, Cu layers 22a and CuNO systems are sequentially laminated with an interarea of base material 21 Blackening layer 23a, the stacked film form pattern, in base material 21 and form on the stacked film of pattern formed with dielectric layer 24a. In addition, being sequentially laminated with Cu layers 22b and CuNO systems blackening layer 23b on another interarea of base material 21, the stacked film forms Pattern, in base material 21 and form on the stacked film of pattern formed with dielectric layer 24b.In addition, CuNO systems blackening layer 23a, 3b Extinction coefficient in wavelength 400nm~700nm is respectively less than more than 1.0 1.8.Electric wiring component shown in Figure 30, by In being laminated with CuNO systems blackening layer 23a, dielectric layer 24a, thus energy on the Cu layers 22a formed on an interarea in base material 21 Enough make from Figure 30 dielectric layer 24a sides incidence visible light line when reflectivity turn into less than 5%.In addition, in the another of base material 21 CuNO systems blackening layer 23b, dielectric layer 24b are also laminated with the Cu layers 22b formed on one interarea, thus even if from Figure 30's Dielectric layer 24b sides incidence visible light line, reflectivity can be also set to turn into less than 5%.That is, by forming as shown in figure 30 electrically Wiring construction element, reflectivity during so as to make incidence visible light line turn into less than 5% on the two sides of electric wiring component.

Electric wiring component shown in Figure 31 is following example：The electric wiring component shown in Figure 29 base material 21 with Between Cu layers 22, dielectric layer 5 and CuNO systems blackening layer 23b are further laminated with.In the electric wiring component, in base material 21 Dielectric layer 5, CuNO systems blackening layer 23b, Cu layer 22 and CuNO systems blackening layer 23a are sequentially laminated with one interarea, is situated between in electricity Matter layer 5, CuNO systems blackening layer 23b, Cu layer 22 for foring pattern on CuNO systems blackening layer 23a stacked film formed with electricity with being situated between Matter layer 24.So, the electric wiring component shown in Figure 31, CuNO systems blackening layer 23a and electricity are laminated with the upper side of Cu layers 22 Dielectric layer 24, thus can make from an interarea side of base material 21 (Figure 31 side of dielectric layer 24) incidence visible light line when it is anti- It is low to penetrate rate.In addition, electric wiring component is due to being also laminated with CuNO systems blackening layer 23b and dielectric layer 5 in the downside of Cu layers 22, Even if therefore it can also make reflectivity low from another interarea side (Figure 31 side of base material 21) incidence visible light line of base material 21. In the case of so forming electric wiring component, the material of dielectric layer 24 is not particularly limited, in order that one from base material 21 Reflectivity during individual interarea side incidence visible light line turns into less than 5%, preferably using the SiO with low-refraction₂、Al₂O₃.Phase For this, for the material of dielectric layer 5, in order that from another interarea side incidence visible light line of base material 21 when reflectivity It is low, the TiO with high index of refraction can be used₂、Ta₂O₅、Nb₂O₅、ZrO₂、HfO₂、La₂O₃、Cr₂O₃、CeO₂、Y₂O₃、ZnO、ITO、 SiO、Si₃N₄Deng, in order that from another interarea side incidence visible light line of base material 21 when reflectivity turn into less than 5%, preferably Use the material in them with higher refractive index, such as TiO₂。

Electric wiring component shown in Figure 32 is following example：In the base material 21 of electric wiring component shown in Figure 29 Dielectric layer 5, CuNO systems blackening layer 23b and Cu layer 22b, and CuNO systems blackening layer 23b are sequentially laminated with another interarea Pattern is formd with Cu layers 22b.Electric wiring component shown in Figure 32 is in the same manner as the electric wiring component shown in Figure 29, in base The top of Cu layers 22a on one interarea of material 21 formed with CuNO systems blackening layer 23a and dielectric layer 24, therefore can make from The reflectivity of Cu layer 22a upper sides during an interarea side (Figure 32 side of dielectric layer 24) incidence visible light line of base material 21 It is low.In addition, the electric wiring component due on another interarea of base material 21 formed with dielectric layer 5 and CuNO systems blackening layer 23b, thus can also make from an interarea side of base material 21 (Figure 32 side of dielectric layer 24) incidence visible light line when Cu layers The reflectivity of 22b upper side is low.Such electric wiring component is adapted to configure Cu layers on two interareas of base material and wanted Reduce from an interarea side incidence visible light line of base material 21 when Cu layers reflectivity situation.In addition, dielectric layer 24 The dielectric layer 24 of material and the electric wiring component shown in Figure 31 limits likewise without special, and preferably using has low refraction The SiO of rate₂、Al₂O₃.In contrast, the dielectric layer 5 of the electric wiring component shown in the material and Figure 31 of dielectric layer 5 is same Ground, the TiO with high index of refraction can be used₂、Ta₂O₅、Nb₂O₅、ZrO₂、HfO₂、La₂O₃、Cr₂O₃、CeO₂、Y₂O₃、ZnO、ITO、 SiO、Si₃N₄Deng preferably using the material in them with higher refractive index, such as TiO₂。

Electric wiring component shown in Figure 33 is following example：By in the electric wiring component shown in Figure 31 in base material The composition formed on 21 interarea, is similarly also formed on another interarea of base material 21.Electrically matching somebody with somebody shown in Figure 33 In line components, be sequentially laminated with an interarea of base material 21 dielectric layer 5a, CuNO systems blackening layer 23b, Cu layer 22a with CuNO systems blackening layer 23a, in dielectric layer 5a, form blackening layer 23b, Cu layer 22a and CuNO systems of CuNO systems melanism of pattern Formed with dielectric layer 24a on layer 23a stacked film.In addition, on another interarea of base material 21, dielectric is sequentially laminated with Layer 5b, CuNO system blackening layer 23c, Cu layer 22b and CuNO system blackening layer 23d, in dielectric layer 5b, form the CuNO systems of pattern Formed with dielectric layer 24b on blackening layer 23c, Cu layer 22b and CuNO systems blackening layer 23d stacked film.Therefore, from base material 21 During one interarea side (Figure 33 dielectric layer 24a sides) incidence visible light line, the upper side and Cu layers in Cu layers 22a can be reduced The reflectivity of 22b upper side.It is in addition, even if incident from another interarea side (Figure 33 dielectric layer 24b sides) of base material 21 Luminous ray, it can also reduce the reflectivity of Cu layers 22a downside and Cu layers 22b downside.Such electric wiring structure Part is suitable for when configuring Cu layers on two interareas of base material and wanting to reduce from two interarea side incidence visible light lines of base material Reflectivity situation.In addition, the dielectric layer 24 of the electric wiring component shown in dielectric layer 24a, 4b material and Figure 31 Likewise without special limitation, preferably using the SiO with low-refraction₂、Al₂O₃.In contrast, the material of dielectric layer 5 with Similarly, the TiO with high index of refraction can be used in the dielectric layer 5 of electric wiring component shown in Figure 31₂、Ta₂O₅、Nb₂O₅、 ZrO₂、HfO₂、La₂O₃、Cr₂O₃、CeO₂、Y₂O₃、ZnO、ITO、SiO、Si₃N₄Deng preferably using having higher refraction in them The material of rate, such as TiO₂。

Embodiment

Hereinafter, enumerate embodiment and more specific description is carried out to the present invention, but the present invention is not limited by the following examples, Certainly it can suitably apply change in the range of it may conform to purport above-mentioned, described later and implement, they are all contained in the present invention Technical scope in.

1. on etching control

In order to confirm the etching speed of CuNO systems blackening layer, tested as follows：Make the CuNO systems melanism of various compositions Layer, makes it be impregnated in the etching solution stipulated time, determines the time spent untill the blackening layer dissolution of CuNO systems.

[sample making]

It is produced on the CuNO for foring thickness 70nm in 50 μm of thickness, width 20mm × 70mm PET base material by sputtering It is the sample of blackening layer (CuO blackening layers, CuN blackening layers, CuNO blackening layers).In addition, in order to compare, also make and form NiCu Blackening layer substitutes the sample of CuNO systems blackening layer.Sputtering condition during blackening layer formation is as follows.

Input electric power：9kW(9.4W/cm²)

[etching test]

Sample is impregnated in the beaker of liquid state etching agent of room temperature is incorporated with, is confirmed until by sputtering the blackening layer formed The time spent untill dissolving.The result of measure is as described in Table 1.In table 1, it is shown that set the time etched needed for Cu For 1 when each sample etching required for time.In table 1, in " blackening layer forms (atom %) " column, with atom % Represent the presence ratio of each element obtained using x-ray photoelectron spectrum analysis device (XPS)." CuNxOy marks on its right side Show " the presence ratio (atom %) of nitrogen-atoms divided by presence ratio (atom %) institute of copper atom (Cu) have been recorded in the x columns on column Obtained numerical value.In addition, the presence ratio (atom %) divided by copper original of oxygen atom are recorded in the y columns on " CuNxOy signs " column Numerical value obtained by the presence ratio (atom %) of sub (Cu).In addition, on specimen coding 2,3, according to for forming blackening layer Gaseous species, the chemical formula of blackening layer is evident as CuO, therefore without carrying out XPS measure.

[maximum reflectivity determination test]

In addition, in table 1, " maximum reflectivity (%) " is the light reflectivity of blackening layer, in detail, is identified below.That is, it is right Each sample before etching blackening layer vertically irradiates luminous ray from blackening layer side, by the wavelength of the luminous ray from 400nm The maximum light reflectivity (%) obtained during to 700nm is scanned to be set to " maximum reflectivity (%) ".Equipment for determining reflectivity For spectrophotometric color measurement instrument (model：CM-3500d；KONICA MINOLTA company systems).In addition, the examination for determining maximum reflectivity Sample clips Cu layers between PET base material and blackening layer, different from the sample made in above-mentioned etching test in this point.

Table 1

[XPS analysis of blackening layer]

Composition point is carried out to made sample (specimen coding 4~13) using x-ray photoelectron spectrum analysis device (XPS) Analysis.The specification of XPS analysis device is as follows.

[device specification]

ProductName：ULVAC-PHI company systems Quantum2000

X-ray source：mono-AlKa(hv：1486.6ev)

Detect depth：The nm of several nm~tens

Acceptance angle：About 45 °

Analyzed area：AboutPlace

[analysis sputtering condition]

Ionic species：Ar⁺

Accelerating potential：1kV

Scanning range：2×2mm

Sputtering rate：1.5nm/min(SiO₂Scaled value)

Figure 19 expressions are obtained by XPS analysis, distance is used as the depth on the surface of the tested film of measure object with being surveyed One example of the relation of fixed atomic density (%).As shown in figure 19, be detected the surface of film influenceed by surface oxidation and Rich in oxygen.In addition, if the depth apart from tested film surface reaches more than 20nm, the Cu of basalis ratio of components can be observed Increase.Therefore, in the present invention, will be apart from quilt for the ratio of components of blackening layer in order to determine the composition of blackening layer in itself as far as possible The ratio of components at any 5 in the range of the depth 7nm~13nm on inspection film surface is averaged and obtained.

As shown in Table 1, in the case where having used the sample of NiCu blackening layers of non-CuNO systems blackening layer, etching period into For more than 10, in contrast, when using CuNO system's blackening layers, etching period is small, i.e. the etching period close to Cu.

As shown in Table 1, using CuO blackening layers when, etching period tend to it is elongated, in addition, maximum reflectivity is also inclined to In uprising, therefore as the material of blackening layer, compared with CuO, it is believed that CuNO, CuN are more excellent.

In addition, according to table 1, in CuNO blackening layers, meet that the CuNO of 0.01≤x≤0.05 and 0.01≤y≤0.35 is black The maximum reflectivity for changing layer (specimen coding 5~13) is suppressed in less than 40%.

Figure 20 is from SEM photograph obtained from the sample (specimen coding 14) after CuN blackening layers side shooting etching process.Figure In 20, " A " that is shown with the double-head arrow of black represents the width of photoresist layer (" 4a " of reference picture 9), is photoresist The position that oxidant layer is linearly formed.But CuN blackening layers end does not turn into linear etching shape, and with white Etching is formed shown in arrow from a vestige as diffusion, meander-shaped can be observed for CuN blackening layers.So, using CuN During material as blackening layer, it is difficult to control the line width of Cu layers.Additionally, there are following problem：The width of CuN blackening layers and CuN layers Degree becomes than desired value (above-mentioned A width) slightly, and correspondingly becomes easily visible.

On the other hand, Figure 21 is that the material of blackening layer is CuNO example, is to shoot etching process from CuNO blackening layers side The SEM photograph obtained by sample (specimen coding 6) afterwards.In Figure 21, in the same manner as when " A " that black double arrows are shown and Figure 20 Represent the width of photoresist layer.As shown in Figure 21, CuNO blackening layers end turns into linear etching shape, can obtain Etched pattern as target.Accordingly, for the etching control of blackening layer end this viewpoint, it is believed that CuNO blackening layers It is more excellent than CuN blackening layer.

As it appears from the above, in the present invention, by using material of the CuNO systems blackening layer as blackening layer, so as to improve because Resistance raises caused by Cu layers become narrow or Cu layers expose and from Cu caused by blackening layer becomes narrow The reflected light of layer increases the problem of such, and the value in industry is very high.

2. suppress on more excellent reflectivity

[test method]

Make the various electric wiring components (sample) with base material and stacked film, confirmed (A) wavelength 400nm~ Reflectivity in wavelength 400nm~700nm of extinction coefficient, (B) during 700nm, the etching control of (C) blackening layer and Cu layers Experiment.

[sample making]

50 μm of thickness, width 20mm × 70mm PET base material on by sputtering form thickness 100nm Cu layers after, layer Folded blackening layer (CuNO blackening layers, CuO blackening layers, CuN blackening layers or NiCu blackening layers).Then, it is being incorporated with the liquid of room temperature Sample is impregnated in the beaker of etchant, to being etched by sputtering the blackening layer formed.Through overetched Cu layers and melanism Dielectric layer (SiO is formed on layer₂Layer or SiO₂Layer and TiO₂Layer).In addition, according to the difference of sample, blackening layer is not formed And/or the stacking of dielectric layer.As sample, sample 1 has been used：SiO₂/ CuNO/Cu, sample 2：CuNO/Cu, sample 3： SiO₂/ CuO/Cu, sample 4：Cu, sample 5：CuO/Cu, sample 6：CuN/Cu, sample 7：SiO₂/TiO₂/ Cu, sample 8：SiO₂/ TiO₂/SiO₂/TiO₂/SiO₂/TiO₂/SiO₂/TiO₂/ Cu, sample 9：This 9 kinds of NiCu/Cu.In addition, splashing during blackening layer formation It is as follows to penetrate condition.

Input electric power：9kW(9.4W/cm²)

(A) extinction coefficient determination test

In table 2, " extinction coefficient " is extinction coefficient of the blackening layer in wavelength 400nm~700nm, in detail, as follows It is determined that.According to the thickness d (nm) as obtained from observing the section of CuNO systems blackening layer and as obtained from spectral photometry One side reflectivity R₀(%), transmitance T (%) obtain extinction coefficient.Calculated according to the step of (A-1) as shown below~(A-4) Go out extinction coefficient.In this experiment, it is thus identified that whether extinction coefficient k is more than 1.0 in wavelength 400nm~700nm.

(A-1) making of measurement sample

By the film forming thickness 40nm~100nm CuNO systems melanism on the polyolefin copolymer film base material of 200 μm of thickness Measurement sample (following, be sometimes also referred to as " sample ") of the sample of layer as extinction coefficient k.

(A-2) measure of the thickness of CuNO systems blackening layer

Observation device (model is processed by using focused ion beam：FB2200；High and new technology company of Hitachi system) and it is super Resolution ratio field emission type SEM (model：SU8010；High and new technology company of Hitachi system) carry out CuNO systems blackening layer Cross-section, so as to obtain the thickness d of CuNO systems blackening layer.

(A-3) the one side reflectivity of sample and the measure of transmitance

Use spectrophotometer (model：U-4100；High and new technology company of Hitachi system), determine in wavelength 400nm~700nm When sample one side reflectivity R₀(%) and transmitance T (%).Figure 34 and Figure 35 is to represent sample involved in the present invention One side reflectivity R₀With the schematic diagram of transmitance T assay method.As shown in figure 34, make incident light 220 (luminous ray) from by During the CuNO systems 23 side incidence of blackening layer for the sample that base material 21 and CuNO systems blackening layer 23 are formed, in the table of CuNO systems blackening layer 23 Face produces reflected light 221, produces reflected light 222 at the interface of base material 21 and CuNO systems blackening layer 23, and produce in substrate backside Reflected light 223.Emergent light 224 is that incident light passes through the emergent light after CuNO systems blackening layer 23, and emergent light 225 is incident light 220 Through the emergent light after CuNO systems blackening layer 23 and base material 21.

The one side reflectivity R of sample₀It is reflectivity sum of the reflectivity with reflected light 222 of reflected light 221.Such as Figure 35 institutes Show, in one side reflectivity R₀Measure in, by carrying out delustring processing and inking at the back side of base material 21, form anti-reflection layer 226, so as to remove in reflected light 223 caused by substrate backside.The transmitance T of sample is that the intensity of emergent light 225 is relative In the ratio of the intensity of incident light 220.

(A-4) calculating of extinction coefficient

Extinction coefficient k obtains according to following mathematical expression 1 and 2.T_iIt is the inside transmitance of CuNO systems blackening layer 23, it is such as following Shown in mathematical expression 2.R_0fIt is the one side reflectivity (%) of CuNO systems blackening layer 23, is expressed as R_0f=R₀/2.As shown in figure 34, CuNO It is the one side reflectivity R of blackening layer 23_0fIt is the reflectivity in reflected light 221 caused by the surface of CuNO systems blackening layer 23.T_fIt is The transmitance (%) of CuNO systems blackening layer 23, is expressed as T_f=T.As shown in figure 35, the transmitance T of CuNO systems blackening layer 23_fTo go out The intensity of light 224 is penetrated relative to the ratio of the intensity of incident light 220.

[number 1]

[number 2]

In addition, when on base material formed with electrode, protective layer, the composition of blackening layer for it is unknown when, at above-mentioned (A-1) In " preparation method of measurement sample ", the thickness and ratio of components that are obtained in the method by following (A-5) turn into the same terms Mode make the thickness and composition of blackening layer.In this case, step (A-2) is omitted.

(A-5) film thickness measuring and XPS analysis of the blackening layer of unknown sample

By carrying out the cross-section of unknown sample, so as to determine the thickness d of the blackening layer of unknown sample_u.For unknown The thickness d of sample_uMeasure, use focused ion beam processing observation device (model：FB2200；High and new technology company of Hitachi system) And super-resolution field emission type SEM (model：SU8010；High and new technology company of Hitachi system).

Constituent analysis is carried out to the blackening layer of unknown sample by using x-ray photoelectron spectrum analysis device (XPS), so as to Obtain the ratio of components of the blackening layer of unknown sample.The ratio of components of the blackening layer of unknown sample is the flat of the ratio of components at any 5 Average.The specification of XPS analysis device is as follows.

[device specification]

ProductName：The Quantum2000 of ULVAC-PHI company systems

X-ray source：mono-AlKa(hv：1486.6ev)

Detect depth：The nm of several nm~tens

Acceptance angle：About 45 °

Analyzed area：AboutPlace

[analysis sputtering condition]

Ionic species：Ar⁺

Accelerating potential：1kV

Scanning range：2×2mm

Sputtering rate：1.5nm/min(SiO₂Scaled value)

(B) measuring reflectance is tested

In table 2, " reflectivity " is vertically to irradiate luminous ray from blackening layer side to each sample, and by the luminous ray Wavelength scans reflectivity resulting during to 700nm from 400nm.Equipment for determining reflectivity is spectrophotometric color measurement instrument (model： CM-3500d；KONICA MINOLTA company systems).In this experiment, it is thus identified that reflectivity in wavelength 400nm~700nm whether For less than 5%.

(C) etching control determination test

In table 2, " etching control " is carried out as follows：Light microscope or SEM are used each sample from blackening layer side The etching shape of CuNO systems blackening layer and Cu layers (or only Cu layers).In this experiment, if blackening layer and Cu layers (or only Cu layers) The etching of end is shaped as linear, then is determined as that etching control is good, if meander-shaped, then be judged to being difficult into Row etching control.

In table 2, as the experimental condition and result of this experiment, specimen coding is shown；Dielectric layer, blackening layer, Cu layers Each material；Dielectric layer, blackening layer, the thickness (nm) of Cu layers；N during blackening layer formation₂Gas, O₂The import volume (%) of gas；Delustring Coefficient；Reflectivity (%)；Etch shape.Figure 36~Figure 38 is 1~comparative example of expression embodiment 2 in wavelength 400nm~700nm When extinction coefficient chart.Figure 39~Figure 47 is the anti-in wavelength 400nm~700nm of 1~comparative example of expression embodiment 8 Penetrate the chart of rate.

[table 2]

(embodiment 1)

It is SiO to have made dielectric layer₂, blackening layer CuNO, the thickness of dielectric layer and blackening layer be respectively 66.8nm, 40.1nm sample 1.As shown in figure 36, in wavelength 400nm~700nm, the CuNO of sample 1 extinction coefficient k for 1.17~ 1.38.In addition, as shown in figure 39, the reflectivity of the sample 1 in wavelength 400nm~700nm is 0.4%~4.8%.Observe SEM photograph, as a result the end of blackening layer is linear etching shape.

(comparative example 1)

Make and be not provided with dielectric layer and thickness is 40nm and has the sample 2 of CuNO blackening layer.As shown in figure 37, In wavelength 400nm~700nm, the CuNO of sample 2 extinction coefficient k is 1.26~1.57.However, as shown in figure 40, in ripple The reflectivity of sample 2 during long 400nm~700nm is 15.0%~28.7%.SEM photograph is observed, as a result the end of blackening layer Portion is linear etching shape.

(comparative example 2)

It is SiO to have made dielectric layer₂, blackening layer CuO, the thickness of dielectric layer and blackening layer be respectively 10nm, 39.9nm sample 3.As shown in figure 38, in wavelength 400nm~700nm, the CuO of sample 3 extinction coefficient k for 0.31~ 0.81.In addition, as shown in figure 41, in wavelength 400nm~700nm, the reflectivity of sample 3 is 8.0%~16.1%.Observe SEM photograph, as a result observe meander-shaped in the end of blackening layer.

(comparative example 3)

The sample 4 for being not provided with dielectric layer and blackening layer is made.Extinction coefficient k is the value relative to blackening layer, therefore Do not measure.As shown in figure 42, in wavelength 400nm~700nm, the reflectivity of sample 4 is 38.1%~87.2%.Observe SEM photograph, as a result the end of Cu layers is linear etching shape, but this is due to that Cu layers are simply formed with base material.

(comparative example 4)

Make and be not provided with dielectric layer and thickness is 30nm and has the sample 5 of CuO blackening layer.As shown in figure 38, In wavelength 400nm~700nm, the CuO of sample 5 extinction coefficient k is 0.31~0.81.However, as shown in figure 43, in wavelength The reflectivity of sample 2 is 3.3%~17.3% during 400nm~700nm.SEM photograph is observed, is as a result seen in the end of blackening layer Observe meander-shaped.

(comparative example 5)

Make and be not provided with dielectric layer and thickness is 30nm and has the sample 6 of CuN blackening layer.As shown in figure 44, In wavelength 400nm~700nm, the reflectivity of sample 2 is 9.0%~18.3%.SEM photograph is observed, as a result in blackening layer Observe meander-shaped in end.

(comparative example 6)

The SiO for being not provided with blackening layer and there is 170.5nm is made₂With 29.5nm TiO₂Dielectric layer sample 7. SiO₂And TiO₂Extinction coefficient k be 0.As shown in figure 45, in wavelength 400nm~700nm, the reflectivity of sample 7 is 11.5% ~89.1%.SEM photograph is observed, as a result the end of Cu layers is linear etching shape, but this is due to that only Cu is being entered Film forming dielectric layer after row etching.

(comparative example 7)

Make and be not provided with blackening layer and have SiO₂And TiO₂Alternately laminated each 4 layers, add up to 8 layers of electricity formed of stacking The sample 8 of dielectric layer.SiO₂And TiO₂Extinction coefficient k be 0.As shown in figure 46, the sample 8 in wavelength 400nm~700nm Reflectivity is 0.6%~96.5%.Observe SEM photograph, as a result the end of Cu layers is linear etching shape, but this be by In the film forming dielectric layer after being only etched to Cu.

(comparative example 8)

The sample 9 for being not provided with dielectric layer and the NiCu blackening layers with thickness 35nm is made.As shown in figure 47, in ripple During long 400nm~700nm, the reflectivity of sample 9 is 12.3%~20.6%.SEM photograph is observed, as a result at the end of blackening layer Observe meander-shaped in portion.

If the CuNO systems blackening layer as similar in above-mentioned results showed that using etching speed and Cu layers is used as melanism Layer, then it can turn into the linear etching shape of Cu layers and the respective similar width of CuNO systems blackening layer.In addition, tied as follows By：Pass through the CuNO systems blackening layer by extinction coefficient when the wavelength region of luminous ray is 400nm~700nm for more than 1.0 It is laminated with the both sides of dielectric layer, so that the reflectivity of wavelength region entirety turns into less than 5%.

Symbol description

1：Base material, 2,2a, 2b：CuNO systems blackening layer, 2c, 2d：Common blackening layer, 3：Cu layers, 4：Photoresist layer, 5：Protective layer, 6：Stacked film, 50：Sputter equipment, 51：Closed shell, 52：Base material rolls out reel, and 53：Base material batches reel, and 54： Next door, 55：First compartment, 56：Second compartment, 57：3rd compartment, 58：Cu targets, 59：Introducing port, 60：Introducing port, 61：Folder Roller, 62：Inner roller, 63：Nip rolls, 64：Wire, 65：Controller, 66：Low vacuum suction port, 67：High vacuum suction port, 21：Base Material, 22,22a, 22b：Cu layers, 23,23a, 23b：CuNO systems blackening layer, 24,24a, 24b, 24c, 24d, 25,25a, 25b：Electricity is situated between Matter layer, 210：Resist layer, 250：Sputter equipment, 251：Closed shell, 252：Base material rolls out reel, and 253：Base material batches Disk, 254：Next door, 255：First compartment, 256：Second compartment, 257：Cu targets, 258,259：Introducing port, 260：Nip rolls, 261： Inner roller, 262：Nip rolls, 263：Wire, 264：Controller, 265：Low vacuum suction port, 266：High vacuum suction port.

Claims

1. the manufacture method of electric wiring component of the reflectivity below 5%, it has following processes：

Cu layers and the extinction coefficient in wavelength 400nm~700nm are sequentially laminated with being formed at least one interarea of base material For the process of the stacked film of less than more than 1.0 1.8 CuNO blackening layers,

The process of predetermined region formation resist layer on the stacked film,

The area not covered by the resist layer of the stacked film is removed by making the stacked film be contacted with etching solution The process in domain and

On the base material and the stacked film for foring pattern, formed different from the CuNO blackening layers as refractive index The SiO of dielectric layer₂The process of layer.

2. electric wiring component of the reflectivity below 5%, it has：

Base material,

The stacked film formed at least one interarea of the base material, the stacked film are sequentially laminated with Cu layers and in wavelength Extinction coefficient during 400nm~700nm be less than more than 1.0 1.8 CuNO blackening layers and form pattern and

In the base material and form being formed on the stacked film of pattern, different from the CuNO blackening layers as refractive index Dielectric layer SiO₂Layer.

3. electric wiring component of the reflectivity according to claim 2 below 5%, the CuNO blackening layers and the SiO₂ Total thickness of layer is below 100nm.