CN106655723B - Trigger silicon controlled rectifier control unit and control method - Google Patents
Trigger silicon controlled rectifier control unit and control method Download PDFInfo
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- CN106655723B CN106655723B CN201611041953.8A CN201611041953A CN106655723B CN 106655723 B CN106655723 B CN 106655723B CN 201611041953 A CN201611041953 A CN 201611041953A CN 106655723 B CN106655723 B CN 106655723B
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- controlled rectifier
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- processor
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 175
- 239000010703 silicon Substances 0.000 title claims abstract description 175
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 170
- 238000000034 method Methods 0.000 title claims description 11
- 230000001960 triggered effect Effects 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 2
- 238000013016 damping Methods 0.000 claims description 2
- 239000013307 optical fiber Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/06—Circuits specially adapted for rendering non-conductive gas discharge tubes or equivalent semiconductor devices, e.g. thyratrons, thyristors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to a trigger silicon controlled rectifier control unit, which comprises a processor, a silicon controlled rectifier laser emitting device, a silicon controlled rectifier laser receiving device and a silicon controlled rectifier parameter acquisition interface, wherein the silicon controlled rectifier trigger signal output end of the processor is connected with the signal input end of the silicon controlled rectifier laser emitting device, the silicon controlled rectifier trigger state signal input end of the processor is connected with the signal output end of the silicon controlled rectifier laser receiving device, and the silicon controlled rectifier parameter data input end of the processor is connected with one end of the silicon controlled rectifier parameter acquisition interface; the invention can efficiently control the trigger of the silicon controlled rectifier and accurately monitor the basic parameter data of the silicon controlled rectifier.
Description
Technical Field
The invention relates to the technical field of high-voltage direct-current converter valves, in particular to a trigger silicon controlled rectifier control unit and a control method.
Background
The controllable silicon is a core element of the direct current transmission system, the main function of the controllable silicon control unit is to monitor and trigger the controllable silicon, and the controllable silicon is vital to the protection and timely detection of the controllable silicon because of the indispensable role in the direct current transmission system, and related detection trigger instruments are developed abroad in the last few years in terms of the present international situation, but the instruments are heavy and large in size due to high manufacturing cost and are inconvenient to detect in time; in the aspect of the current market research results, related series products are more portable than foreign products, but the direct reading of data cannot be realized through the products, so that the direct-current transmission system is a time-consuming and labor-consuming work, and due to the importance of the direct-current transmission system, the direct-current transmission system is maintained in a daily station, and the requirement on the timeliness of the detected data is strict. This creates an urgent need for a detector that can be triggered quickly by the thyristor control unit and output data in real time.
Disclosure of Invention
The invention aims to provide a trigger silicon controlled rectifier control unit and a control method, which can efficiently control the trigger of the silicon controlled rectifier and accurately monitor basic parameter data of the silicon controlled rectifier.
In order to solve the technical problems, the invention discloses a trigger silicon controlled rectifier control unit, which is characterized in that: the device comprises a processor, a silicon controlled laser emitting device, a silicon controlled laser receiving device and a silicon controlled parameter acquisition interface, wherein the silicon controlled trigger signal output end of the processor is connected with the signal input end of the silicon controlled laser emitting device, the silicon controlled trigger state signal input end of the processor is connected with the signal output end of the silicon controlled laser receiving device, and the silicon controlled parameter data input end of the processor is connected with one end of the silicon controlled parameter acquisition interface;
the laser signal output end of the silicon controlled laser emission device is connected with the silicon controlled laser trigger signal input end of the silicon controlled control unit, and the silicon controlled basic parameter data output end of the silicon controlled data acquisition device is connected with the other end of the silicon controlled parameter acquisition interface;
the processor is used for collecting the forward and reverse repeated peak voltage parameters of the silicon controlled rectifier, the loop impedance of the silicon controlled rectifier and the short-circuit current of the silicon controlled rectifier through the silicon controlled rectifier data collecting device;
the processor is also used for sending a silicon controlled laser trigger signal to the silicon controlled rectifier control unit through the silicon controlled rectifier laser emitting device;
the processor is also used for receiving feedback information of whether the silicon controlled rectifier fed back by the silicon controlled rectifier control unit is triggered successfully or not through the silicon controlled rectifier laser receiving device.
The control method for triggering the thyristor control unit comprises the following steps:
step 1: the processor transmits a frequency-stabilized silicon controlled laser trigger signal to the silicon controlled rectifier control unit through the silicon controlled rectifier laser transmitting device;
step 2: the silicon controlled rectifier control unit amplifies the received silicon controlled rectifier laser trigger signal, logically processes the received silicon controlled rectifier laser trigger signal and then triggers the silicon controlled rectifier;
step 3: the silicon controlled rectifier control unit judges whether the silicon controlled rectifier is triggered successfully or not, and feeds back feedback information of whether the silicon controlled rectifier is triggered successfully or not to the processor;
step 4: after the processor obtains feedback that the silicon controlled rectifier is successfully triggered, the processor collects the positive and negative repeated peak voltage parameters of the silicon controlled rectifier, the loop impedance of the silicon controlled rectifier and the short-circuit current of the silicon controlled rectifier through the silicon controlled rectifier parameter collection interface;
step 5: the processor displays the collected forward and reverse repeated peak voltage parameters of the silicon controlled rectifier, the loop impedance of the silicon controlled rectifier and the short-circuit current of the silicon controlled rectifier through the display.
The working principle of the invention is as follows: the invention transmits the optical signal with fixed laser frequency and duty ratio to the circuit board of the controlled silicon control unit through the optical fiber, and the controlled silicon control unit judges and triggers the controlled silicon according to the obtained frequency, thereby judging the quality of the controlled silicon and the damping loop.
The invention is portable and intelligent, can rapidly trigger the thyristor control unit, can obtain feedback information of the triggering state of the thyristor, and can rapidly and accurately acquire the basic parameter data for triggering the thyristor. The invention can be widely applied to the test of 500kV and 800kV converter valve with ABB structure. Has wide popularization prospect and strong practical value. Has the advantages of no maintenance, strong adaptability, small volume, light weight, low power consumption, no rust, no harm to human body, etc.
Drawings
FIG. 1 is a block diagram of the structure of the present invention;
FIG. 2 is a circuit diagram of a thyristor laser emitting device according to the present invention;
fig. 3 is a circuit diagram of a thyristor laser receiver according to the present invention.
The device comprises a 1-processor, a 2-silicon controlled laser emitting device, a 3-silicon controlled laser receiving device, a 4-silicon controlled parameter acquisition interface, a 5-silicon controlled data acquisition device, a 6-silicon controlled control unit and a 7-display.
Detailed Description
The invention is described in further detail below with reference to the attached drawings and specific examples:
the invention relates to a trigger silicon controlled rectifier control unit, which comprises a processor 1 (STM 32 processor), a silicon controlled rectifier laser emitting device 2, a silicon controlled rectifier laser receiving device 3 and a silicon controlled rectifier parameter acquisition interface 4, wherein the silicon controlled rectifier trigger signal output end of the processor 1 is connected with the signal input end of the silicon controlled rectifier laser emitting device 2, the silicon controlled rectifier trigger state signal input end of the processor 1 is connected with the signal output end of the silicon controlled rectifier laser receiving device 3, and the silicon controlled rectifier basic parameter data input end of the processor 1 is connected with one end of the silicon controlled rectifier parameter acquisition interface 4;
the laser signal output end of the silicon controlled laser emission device 2 is connected with the silicon controlled laser trigger signal input end of the silicon controlled control unit 6, and the silicon controlled basic parameter data output end of the silicon controlled data acquisition device 5 is connected with the other end of the silicon controlled parameter acquisition interface 4;
the processor 1 is used for collecting the forward and reverse repeated peak voltage parameters of the silicon controlled rectifier, the loop impedance of the silicon controlled rectifier and the short-circuit current of the silicon controlled rectifier through the silicon controlled rectifier data collecting device 5;
the processor 1 is further used for sending a silicon controlled laser trigger signal to the silicon controlled control unit 6 through the silicon controlled laser emitting device 2;
the processor 1 is further configured to receive feedback information of whether the thyristor fed back by the thyristor control unit 6 is triggered successfully through the thyristor laser receiving device 3.
In the above technical solution, the thyristor laser emission device 2 includes a resistor R1-resistor R6, a tantalum capacitor C1, a laser emission diode L2, and a MOS transistor Q1, where the anode of the tantalum capacitor C1, one end of the resistor R2, one end of the resistor R3, and one end of the resistor R4 are all connected to a power supply (+5v), the cathode of the tantalum capacitor C1 is grounded GND, the other end of the resistor R1, the other end of the resistor R2, the other end of the resistor R3, and the other end of the resistor R4 are connected to the anode of the laser emission diode L2, the cathode of the laser emission diode L2 is connected to the source S of the MOS transistor Q1, the drain D of the MOS transistor Q1 is grounded GND, the output end of the thyristor trigger signal of the processor 1 is connected to one end of the resistor R5, the other end of the resistor R5 is connected to the gate G of the MOS transistor Q1, one end of the resistor R6 is connected to the drain D of the MOS transistor Q1, and the laser signal emitted by the laser emission diode L2 enters the thyristor control unit 6.
In the above technical solution, the thyristor laser receiving device 3 includes a resistor R7-resistor R9, a laser receiving diode L1 and a MOS transistor Q2, where one end of the resistor R7 is connected with a power supply (+5v), the other end of the resistor R7 is connected with a cathode of the laser receiving diode L1, an anode of the laser receiving diode L1 is grounded GND, one end of the resistor R8 is connected with a cathode of the laser receiving diode L1, the other end of the resistor R8 is connected with a gate G of the MOS transistor Q2, one end of the resistor R9 is connected with the power supply (+5v), the other end of the resistor R9 is connected with a drain D of the MOS transistor Q2, a source S of the MOS transistor Q2 is connected with an anode of the laser receiving diode L1, a drain D of the MOS transistor Q2 is connected with a thyristor triggering state signal input end of the processor 1, and a feedback information optical signal output end of whether the thyristor of the thyristor control unit 6 is successfully triggered is connected with the laser receiving diode L1 through a laser adaptor.
In the above technical solution, the laser frequency of the thyristor laser trigger signal emitted by the thyristor laser emitting device 2 is 10kHZ, and the duty ratio is 0.05. The frequency and the duty cycle are used to match the triggering of the thyristor control unit 6.
In the above technical solution, the display signal output end of the processor 1 is further connected with a display 7 (a kunlun touch screen).
In the above technical scheme, the silicon controlled rectifier parameter acquisition interface 4 is an RS485 communication serial port. The RS485 node is convenient for networking, and the network with low cost, low power consumption, more network nodes and long transmission distance is realized.
The invention adopts STM32 processor, which greatly reduces the power consumption of the equipment.
The control method for triggering the thyristor control unit comprises the following steps:
step 1: the processor 1 transmits a frequency-stabilized silicon controlled laser trigger signal to the silicon controlled rectifier control unit 6 through the silicon controlled rectifier laser transmitting device 2;
step 2: the silicon controlled rectifier control unit 6 amplifies the received silicon controlled rectifier laser trigger signal, logically processes the signal and then triggers the silicon controlled rectifier;
step 3: the silicon controlled rectifier control unit 6 judges whether the silicon controlled rectifier is triggered successfully or not, and feeds back feedback information of whether the silicon controlled rectifier is triggered successfully or not to the processor 1;
step 4: after the processor 1 obtains feedback that the silicon controlled rectifier has been successfully triggered, the processor 1 collects the positive and negative repeated peak voltage parameters of the silicon controlled rectifier, the loop impedance of the silicon controlled rectifier and the short-circuit current of the silicon controlled rectifier through the silicon controlled rectifier parameter collection interface 4;
step 5: the processor 1 displays the collected forward and reverse repeated peak voltage parameters of the silicon controlled rectifier, the loop impedance of the silicon controlled rectifier and the short-circuit current of the silicon controlled rectifier through the display 7.
What is not described in detail in this specification is prior art known to those skilled in the art.
Claims (6)
1. A trigger thyristor control unit, characterized in that: the device comprises a processor (1), a silicon controlled laser emitting device (2), a silicon controlled laser receiving device (3) and a silicon controlled parameter acquisition interface (4), wherein the silicon controlled trigger signal output end of the processor (1) is connected with the signal input end of the silicon controlled laser emitting device (2), the silicon controlled trigger state signal input end of the processor (1) is connected with the signal output end of the silicon controlled laser receiving device (3), and the silicon controlled parameter data input end of the processor (1) is connected with one end of the silicon controlled parameter acquisition interface (4);
the laser signal output end of the silicon controlled laser emission device (2) is connected with the silicon controlled laser trigger signal input end of the silicon controlled control unit (6), and the silicon controlled basic parameter data output end of the silicon controlled data acquisition device (5) is connected with the other end of the silicon controlled parameter acquisition interface (4);
the processor (1) is used for collecting the forward and reverse repeated peak voltage parameters of the silicon controlled rectifier, the loop impedance of the silicon controlled rectifier and the short-circuit current of the silicon controlled rectifier through the silicon controlled rectifier data collecting device (5);
the processor (1) is also used for sending a silicon controlled laser trigger signal to the silicon controlled control unit (6) through the silicon controlled laser emitting device (2);
the processor (1) is also used for receiving feedback information of whether the silicon controlled rectifier fed back by the silicon controlled rectifier control unit (6) is triggered successfully or not through the silicon controlled rectifier laser receiving device (3);
the laser frequency of the trigger signal of the silicon controlled laser emitted by the silicon controlled laser emitting device (2) is 10kHZ, the duty ratio is 0.05, and the frequency and the duty ratio are used for matching with the trigger of the silicon controlled control unit (6); transmitting an optical signal with fixed laser frequency and duty ratio to a circuit board of a silicon controlled rectifier control unit through an optical fiber, and judging and triggering the silicon controlled rectifier by the silicon controlled rectifier control unit according to the obtained frequency, so as to judge the quality of the silicon controlled rectifier and a damping loop;
the controllable silicon laser emission device (2) comprises resistors R1-R6, a tantalum capacitor C1, a laser emission diode L2 and a MOS tube Q1, wherein the positive electrode of the tantalum capacitor C1, one end of the resistor R2, one end of the resistor R3 and one end of the resistor R4 are all connected with a power supply, the negative electrode of the tantalum capacitor C1 is grounded GND, the other end of the resistor R1, the other end of the resistor R2, the other end of the resistor R3 and the other end of the resistor R4 are connected with the positive electrode of the laser emission diode L2, the negative electrode of the laser emission diode L2 is connected with a source electrode S of the MOS tube Q1, a drain electrode D of the MOS tube Q1 is grounded GND, a controllable silicon trigger signal output end of the processor (1) is connected with one end of the resistor R5, the other end of the resistor R5 is connected with a grid electrode G of the MOS tube Q1, one end of the resistor R6 is connected with a drain electrode D of the MOS tube Q1, and a laser signal emitted by the laser emission diode L2 enters a controllable silicon control unit (6) to trigger signal input end.
2. The trigger thyristor control unit according to claim 1, wherein: the controllable silicon laser receiving device (3) comprises resistors R7-R9, a laser receiving diode L1 and a MOS tube Q2, wherein one end of the resistor R7 is connected with a power supply, the other end of the resistor R7 is connected with the negative electrode of the laser receiving diode L1, the positive electrode of the laser receiving diode L1 is grounded GND, one end of the resistor R8 is connected with the negative electrode of the laser receiving diode L1, the other end of the resistor R8 is connected with a grid G of the MOS tube Q2, one end of the resistor R9 is connected with the power supply, the other end of the resistor R9 is connected with a drain electrode D of the MOS tube Q2, a source electrode S of the MOS tube Q2 is connected with the positive electrode of the laser receiving diode L1, the drain electrode D of the MOS tube Q2 is connected with a controllable silicon triggering state signal input end of a processor (1), and a feedback information optical signal output end whether the controllable silicon of a controllable silicon control unit (6) is triggered successfully is connected with the laser receiving diode L1 through a laser adapter.
3. The trigger thyristor control unit according to claim 1, wherein: the display signal output end of the processor (1) is also connected with a display (7).
4. The trigger thyristor control unit according to claim 1, wherein: the silicon controlled rectifier parameter acquisition interface (4) is a communication serial port.
5. A control method of triggering a thyristor control unit according to claim 1, comprising the steps of:
step 1: the processor (1) transmits a frequency-stabilized silicon controlled laser trigger signal to the silicon controlled rectifier control unit (6) through the silicon controlled rectifier laser transmitting device (2);
step 2: the silicon controlled rectifier control unit (6) amplifies the received silicon controlled rectifier laser trigger signal, logically processes the received silicon controlled rectifier laser trigger signal and then triggers the silicon controlled rectifier;
step 3: the silicon controlled rectifier control unit (6) judges whether the silicon controlled rectifier is triggered successfully or not, and feeds back feedback information of whether the silicon controlled rectifier is triggered successfully or not to the processor (1);
step 4: after the processor (1) obtains feedback that the silicon controlled rectifier is successfully triggered, the processor (1) collects the positive and negative repeated peak voltage parameters of the silicon controlled rectifier, the loop impedance of the silicon controlled rectifier and the short-circuit current of the silicon controlled rectifier through the silicon controlled rectifier parameter collection interface (4).
6. The control method for triggering a thyristor control unit according to claim 5, wherein: the step 4 further includes a step 5: the processor (1) displays the collected forward and reverse repeated peak voltage parameters of the silicon controlled rectifier, the loop impedance of the silicon controlled rectifier and the short-circuit current of the silicon controlled rectifier through the display (7).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611041953.8A CN106655723B (en) | 2016-11-24 | 2016-11-24 | Trigger silicon controlled rectifier control unit and control method |
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| CN201611041953.8A CN106655723B (en) | 2016-11-24 | 2016-11-24 | Trigger silicon controlled rectifier control unit and control method |
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| CN106655723A CN106655723A (en) | 2017-05-10 |
| CN106655723B true CN106655723B (en) | 2023-11-17 |
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| CN109633482B (en) * | 2018-12-28 | 2021-01-12 | 北华大学 | Silicon controlled rectifier triggers to switch on detection device |
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| CN206180828U (en) * | 2016-11-24 | 2017-05-17 | 国家电网公司 | Trigger thyristor control unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103138274B (en) * | 2013-01-23 | 2014-12-10 | 苏州工业园区和顺电气股份有限公司 | Monitorable magnetically-controlled reactor |
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- 2016-11-24 CN CN201611041953.8A patent/CN106655723B/en active Active
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| JPH05291836A (en) * | 1992-04-09 | 1993-11-05 | Fujitsu Ltd | Optical receiver |
| CN104319789A (en) * | 2013-01-23 | 2015-01-28 | 苏州工业园区和顺电气股份有限公司 | Electric reactor for electric power |
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