CN106653945A - Method for obtaining indium balls of readout circuit - Google Patents
Method for obtaining indium balls of readout circuit Download PDFInfo
- Publication number
- CN106653945A CN106653945A CN201611136602.5A CN201611136602A CN106653945A CN 106653945 A CN106653945 A CN 106653945A CN 201611136602 A CN201611136602 A CN 201611136602A CN 106653945 A CN106653945 A CN 106653945A
- Authority
- CN
- China
- Prior art keywords
- indium
- reading circuit
- liquid
- balling
- post
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 105
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 31
- 239000008188 pellet Substances 0.000 claims description 37
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 14
- 239000002893 slag Substances 0.000 claims description 14
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 239000011592 zinc chloride Substances 0.000 claims description 5
- 235000005074 zinc chloride Nutrition 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229960004756 ethanol Drugs 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical group C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a method for obtaining indium balls of a readout circuit. The method comprises the following steps of growing indium bumps on the readout circuit; preparing a balling liquid and heating the balling liquid to a preset temperature to obtain a pilling liquid; and immersing the readout circuit with the indium bumps into the pilling liquid and keeping for a preset period of time to obtain the indium balls. The heights of the indium balls of the readout circuit are greatly increased through a method of melting the indium bumps into the balls, the interconnection effect of the readout circuit with the indium balls on an infrared focal plane and a detector is firm, the reliability is high and a foundation is provided for a common-chip technology.
Description
Technical field
The present invention relates to infrared focal plane detector technical field, more particularly to a kind of reading circuit indium pellet acquisition methods.
Background technology
At present, the flip-chip interconnection of infrared focal plane detector can be divided into two kinds from principle：One kind is only to read electricity
Terminal grows single indium bump joining of indium post；Another kind is detector end and reading circuit end grow indium post two-sided indium post it is mutual
Even, both approaches respectively have pluses and minuses.
First method can carry out the growth of indium post on infrared focal plane detector, will not be to detector
Performance produces damage, and reduces processing step, shortens technique duration, is conducive to production capacity to be lifted.
The interconnection mode of second two-sided indium post is another mode of infrared focal plane detector technology, i.e. reading circuit
Grow with detector and be interconnected after indium post.This mode can improve indium pillar height degree, be finally completed interconnection.
When using first method, need to grow sufficiently high indium post at reading circuit end, but at present due to by work
Skill and equipment are limited, and can not be obtained sufficiently high indium post and are interconnected.
The content of the invention
In order to grow sufficiently high indium post at reading circuit end, the invention provides a kind of reading circuit indium pellet acquisition side
Method.
The reading circuit indium pellet acquisition methods that the present invention is provided, comprise the following steps：
Indium post is grown on reading circuit；
Configuration balling-up liquid, and the balling-up liquid is heated to into preset temperature, obtain balling-up liquid；
Reading circuit with indium post is immersed in the balling-up liquid and keeps Preset Time, obtain indium pellet.
The present invention has the beneficial effect that：
The embodiment of the present invention is significantly increased reading circuit indium pellet height by way of indium post is melted into balling-up, with indium pellet
Infrared focal plane read-out circuit and detector interconnection effect firmly, it is highly reliable, be that common chip technology provides the foundation.
Description of the drawings
Fig. 1 is the flow chart of embodiment of the present invention reading circuit indium pellet acquisition methods.
Specific embodiment
The exemplary embodiment of the disclosure is more fully described below with reference to accompanying drawings.Although showing the disclosure in accompanying drawing
Exemplary embodiment, it being understood, however, that may be realized in various forms the disclosure and should not be by embodiments set forth here
Limited.On the contrary, there is provided these embodiments are able to be best understood from the disclosure, and can be by the scope of the present disclosure
Complete conveys to those skilled in the art.
In order to grow sufficiently high indium post at reading circuit end, the invention provides a kind of reading circuit indium pellet acquisition side
Method, below in conjunction with accompanying drawing and embodiment, the present invention will be described in further detail.It should be appreciated that tool described herein
Body embodiment limits the present invention only to explain the present invention, not.
A kind of embodiments in accordance with the present invention, there is provided reading circuit indium pellet acquisition methods, Fig. 1 is that the embodiment of the present invention is read
Go out the flow chart of circuit indium pellet acquisition methods, as shown in figure 1, reading circuit indium pellet acquisition methods bag according to embodiments of the present invention
Include following process：
Step 101, grows indium post on reading circuit.
Specifically, step 101 grows indium post on reading circuit and comprises the following steps：
Prime coat is grown on reading circuit；
Indium post is grown on the prime coat.
Specifically, the prime coat is the material for easily being combined with indium, more specific, and the prime coat material is for size
The titanium layer of Φ 5, palladium layers, layer gold, the titanium layer, palladium layers, layer gold thickness are respectively 0.3 μm, 0.2 μm, 0.3 μm；By thermal evaporation
Mode by indium evaporate on prime coat.
Specifically, grow on reading circuit further comprising the steps of after indium post：
Remove the indium slag on the reading circuit surface with indium post.
Although the property of indium is soft, plasticity is strong, and has ductility, and its viscosity is big, so it is difficult to remove its indium slag,
Gu protects required part using photoresist, and reusing acid will need to carry out Slag treatment where removal indium slag, pass through
This kind of method as far as possible removes the indium slag on reading circuit surface totally.
Specifically, the indium slag for removing the reading circuit surface with indium post is comprised the following steps：
After the indium post surface resist coating, the reading circuit with indium post is carried out into supersound process in acid solution,
To remove the indium slag on reading circuit surface, wherein, in the acid solution by volume, acetone：Water：Ethanol=2：1：1；
Remove the photoresist on the indium post surface.Specifically, the photoetching on the indium post surface can be removed using acetone soak
Glue.
Step 102, configures balling-up liquid, and the balling-up liquid is heated to into preset temperature, obtains balling-up liquid.
Specifically, balling-up liquid is, with resistant to elevated temperatures organic solvent as primary raw material, to be equipped with zinc chloride for auxiliary material.It is described
Resistant to elevated temperatures organic solvent can for ethylene glycol etc., in the balling-up liquid ethylene glycol and zinc chloride volume mass ratio be 400～
600ml：25～50g.Used as a kind of specific embodiment, the balling-up liquid can be the zinc chloride of 500ml ethylene glycol and 30g
The mixture of composition.
The balling-up liquid is to add zinc chloride powder in organic solvent in preparation method, and is carried out by mixed glue de-soak machine
Mixing, places 1～2 week.
Specifically, in the thick high-temperature resistant containers of the 8-20mm of customization, and the balling-up liquid is heated to into preset temperature, is obtained
To balling-up liquid.The preset temperature is 150～200 DEG C, preferably 150 DEG C.The too low meeting balling-up failure of temperature, the too high meeting of temperature is right
Indium pellet surface produces chemical reaction after balling-up so that foreign body occurs in indium pellet edge, affects interconnection effect.
Step 103, the reading circuit with indium post is immersed in the balling-up liquid and keeps Preset Time, obtains indium pellet.
Specifically, the Preset Time is 5～10 minutes.
Preferably, the reading circuit with indium post is immersed in the balling-up liquid and keeps Preset Time, after obtaining indium pellet
It is further comprising the steps of：
Remove the balling-up liquid on the reading circuit surface with indium pellet.
Specifically, the balling-up liquid for removing the reading circuit surface with indium pellet is comprised the following steps：
To dry up after immersion except the reading circuit with indium pellet is immersed in ball liquid.It is described to go the ball liquid be according to organic
The ease of solubility of solvent being selected and be configured, specifically, described to go in ball liquid by volume, water：Ethanol=1:(1.5～2),
Preferably 1:1.5.
For the reading circuit indium pellet acquisition methods of the more detailed explanation present invention, example 1 is given.
The present invention provides a kind of infrared focal plane detector and uses eight cun of reading circuit indium pellet acquisition methods, including following
Step：
Step A：Will be provided with the reading circuit of solder joint carries out growing the prime coat growth before indium post, and prime coat needs a kind of easy
The material combined with indium.
Step B：The growth of indium post is carried out, indium post is grown according to the height of required indium post.
Step C：The pretreatment that eight cun of reading circuits after indium post are peeled off will be grown, although the property of indium is soft,
Plasticity is strong, and has ductility, but its viscosity is big, so it is difficult to removing its indium slag, Gu protects required part using photoresist
Shield is got up, and is reused acid and will be needed to remove and carry out Slag treatment where indium slag, by this kind of method by reading circuit surface
Indium slag is removed as far as possible totally.
Step D：Balling-up process is carried out to indium post using wet method.Balling-up liquid is with resistant to elevated temperatures organic solvent as main former
Material, it is auxiliary material to be equipped with zinc chloride, and 25～50g zinc chloride powders are added in one bottle of organic solvent, and by mixed glue de-soak
Machine is mixed, and is placed 1～2 week.Balling-up liquid is placed in the thick high-temperature resistant containers of 8～20mm of customization, is heated to above
The temperature melted required for indium, keeps 10min to make balling-up liquid status keep stable；
Step E：Eight cun of reading circuits after indium post will be grown to be put in the balling-up liquid of configuration, balling-up liquid is and is heated to
Temperature required balling-up liquid；
Step F：Eight cun of reading circuits are put in balling-up liquid to be heated and take out after 5min balling-up；
Step G：Eight cun of reading circuits after by balling-up are put into the pure water for having configured with dehydrated alcohol with 1：(1.5～2) compare
What example was mixed goes in ball liquid to soak 1h, afterwards reading circuit surface is cleared up with spray gun.
Reading circuit indium pellet acquisition methods provided in an embodiment of the present invention, are the sides for realizing that uniform indium pellet solder joint uniformity is good
Method, to obtain and can directly be interconnected operation after indium pellet.
Embodiments of the invention are the foregoing is only, the present invention is not limited to, for those skilled in the art
For member, the present invention can have various modifications and variations.All any modifications within the spirit and principles in the present invention, made,
Equivalent, improvement etc., should be included within scope of the presently claimed invention.
Claims (10)
1. a kind of reading circuit indium pellet acquisition methods, it is characterised in that comprise the following steps：
Indium post is grown on reading circuit；
Configuration balling-up liquid, and the balling-up liquid is heated to into preset temperature, obtain balling-up liquid；
Reading circuit with indium post is immersed in the balling-up liquid and keeps Preset Time, obtain indium pellet.
2. reading circuit indium pellet acquisition methods as claimed in claim 1, it is characterised in that indium post bag is grown on reading circuit
Include following steps：
Prime coat is grown on reading circuit；
Indium post is grown on the prime coat.
3. reading circuit indium pellet acquisition methods as claimed in claim 1, it is characterised in that grow on reading circuit indium post it
After comprise the following steps：
Remove the indium slag on the reading circuit surface with indium post.
4. reading circuit indium pellet acquisition methods as claimed in claim 3, it is characterised in that remove the reading circuit with indium post
The indium slag on surface is comprised the following steps：
After the indium post surface resist coating, the reading circuit with indium post is carried out into supersound process in acid solution, to go
Except the indium slag on reading circuit surface；
Remove the photoresist on the indium post surface.
5. reading circuit indium pellet acquisition methods as claimed in claim 1, it is characterised in that the balling-up liquid be organic solvent with
The mixture of zinc chloride composition.
6. reading circuit indium pellet acquisition methods as claimed in claim 5, it is characterised in that the organic solvent is ethylene glycol.
7. reading circuit indium pellet acquisition methods as claimed in claim 6, it is characterised in that ethylene glycol and chlorine in the balling-up liquid
It is 400～600ml to change zinc volume mass ratio：25～50g.
8. reading circuit indium pellet acquisition methods as claimed in claim 1, it is characterised in that the preset temperature is 150～200
℃。
9. reading circuit indium pellet acquisition methods as claimed in claim 1, it is characterised in that the Preset Time is 5～10 points
Clock.
10. reading circuit indium pellet acquisition methods as claimed in claim 1, it is characterised in that the reading circuit of indium post will be carried
Immerse in the balling-up liquid and keep Preset Time, obtain further comprising the steps of after indium pellet：Remove the electricity of the reading with indium pellet
The balling-up liquid of road surfaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611136602.5A CN106653945A (en) | 2016-12-12 | 2016-12-12 | Method for obtaining indium balls of readout circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611136602.5A CN106653945A (en) | 2016-12-12 | 2016-12-12 | Method for obtaining indium balls of readout circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106653945A true CN106653945A (en) | 2017-05-10 |
Family
ID=58824492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611136602.5A Pending CN106653945A (en) | 2016-12-12 | 2016-12-12 | Method for obtaining indium balls of readout circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106653945A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113314556A (en) * | 2021-05-28 | 2021-08-27 | 北京智创芯源科技有限公司 | Focal plane detector and indium ball array preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1587958A (en) * | 2004-07-27 | 2005-03-02 | 中国科学院上海技术物理研究所 | Indium pole pelletizing method of infrared focal plane detector |
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| CN101976651A (en) * | 2009-11-18 | 2011-02-16 | 日月光半导体制造股份有限公司 | Stack semiconductor package manufacturing method |
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| CN105826421A (en) * | 2016-05-12 | 2016-08-03 | 昆明物理研究所 | Indium bump device structure and preparation method for same |
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-
2016
- 2016-12-12 CN CN201611136602.5A patent/CN106653945A/en active Pending
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113314556A (en) * | 2021-05-28 | 2021-08-27 | 北京智创芯源科技有限公司 | Focal plane detector and indium ball array preparation method thereof |
| CN113314556B (en) * | 2021-05-28 | 2022-02-15 | 北京智创芯源科技有限公司 | Focal plane detector and indium ball array preparation method thereof |
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Application publication date: 20170510 |