CN106653935A - 一种制备太阳能电池金属栅线中锡层的保护方法 - Google Patents
一种制备太阳能电池金属栅线中锡层的保护方法 Download PDFInfo
- Publication number
- CN106653935A CN106653935A CN201510731381.5A CN201510731381A CN106653935A CN 106653935 A CN106653935 A CN 106653935A CN 201510731381 A CN201510731381 A CN 201510731381A CN 106653935 A CN106653935 A CN 106653935A
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- CN
- China
- Prior art keywords
- layer
- amorphous silicon
- metal grid
- solar cell
- grid lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 79
- 239000002184 metal Substances 0.000 title claims abstract description 79
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title abstract 2
- 238000003475 lamination Methods 0.000 claims abstract description 39
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 157
- 239000011241 protective layer Substances 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910004156 TaNx Inorganic materials 0.000 claims description 3
- 229910010421 TiNx Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract 3
- 210000004027 cell Anatomy 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 238000003486 chemical etching Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510731381.5A CN106653935B (zh) | 2015-11-02 | 2015-11-02 | 一种制备太阳能电池金属栅线中锡层的保护方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510731381.5A CN106653935B (zh) | 2015-11-02 | 2015-11-02 | 一种制备太阳能电池金属栅线中锡层的保护方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106653935A true CN106653935A (zh) | 2017-05-10 |
CN106653935B CN106653935B (zh) | 2019-02-19 |
Family
ID=58809786
Family Applications (1)
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CN201510731381.5A Active CN106653935B (zh) | 2015-11-02 | 2015-11-02 | 一种制备太阳能电池金属栅线中锡层的保护方法 |
Country Status (1)
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CN (1) | CN106653935B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010020045A (ko) * | 1999-08-31 | 2001-03-15 | 구자홍 | 플라즈마 표시소자용 미세배선 보호층 제조방법 |
CN102779905A (zh) * | 2012-08-23 | 2012-11-14 | 马悦 | 一种太阳能电池电极的制备方法 |
CN102786838A (zh) * | 2012-03-01 | 2012-11-21 | 长兴化学工业股份有限公司 | 抗蚀刻组合物及其应用 |
CN104701410A (zh) * | 2013-12-10 | 2015-06-10 | 泉州市博泰半导体科技有限公司 | 一种硅基异质结电池片上金属栅线的制作方法 |
CN104810428A (zh) * | 2014-01-25 | 2015-07-29 | 泉州市博泰半导体科技有限公司 | 一种用于制作硅基异质结电池片时结合层的处理方法 |
CN104934497A (zh) * | 2014-03-19 | 2015-09-23 | 泉州市博泰半导体科技有限公司 | 一种硅基异质结电池片金属叠层的制作方法 |
-
2015
- 2015-11-02 CN CN201510731381.5A patent/CN106653935B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010020045A (ko) * | 1999-08-31 | 2001-03-15 | 구자홍 | 플라즈마 표시소자용 미세배선 보호층 제조방법 |
CN102786838A (zh) * | 2012-03-01 | 2012-11-21 | 长兴化学工业股份有限公司 | 抗蚀刻组合物及其应用 |
CN102779905A (zh) * | 2012-08-23 | 2012-11-14 | 马悦 | 一种太阳能电池电极的制备方法 |
CN104701410A (zh) * | 2013-12-10 | 2015-06-10 | 泉州市博泰半导体科技有限公司 | 一种硅基异质结电池片上金属栅线的制作方法 |
CN104810428A (zh) * | 2014-01-25 | 2015-07-29 | 泉州市博泰半导体科技有限公司 | 一种用于制作硅基异质结电池片时结合层的处理方法 |
CN104934497A (zh) * | 2014-03-19 | 2015-09-23 | 泉州市博泰半导体科技有限公司 | 一种硅基异质结电池片金属叠层的制作方法 |
Also Published As
Publication number | Publication date |
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CN106653935B (zh) | 2019-02-19 |
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Effective date of registration: 20201012 Address after: 362000 South Ring Road High-tech Park, Licheng District, Quanzhou City, Fujian Province Patentee after: GS-SOLAR (FUJIAN) Co.,Ltd. Address before: 362000, Quanzhou, Fujian province Licheng district on the streets of Sin Tong Community Patentee before: GS-SOLAR (CHINA) Co.,Ltd. |
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Effective date of registration: 20211207 Address after: No.17, Quanyuan Road, Jinjiang Economic Development Zone (wuliyuan), Quanzhou City, Fujian Province, 362000 Patentee after: FUJIAN JINSHI ENERGY Co.,Ltd. Address before: 362000 Nanhuan high tech park, Licheng District, Quanzhou City, Fujian Province Patentee before: GS-SOLAR (FU JIAN) Co.,Ltd. |