CN106653779A - Image sensor package - Google Patents
Image sensor package Download PDFInfo
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- CN106653779A CN106653779A CN201610191152.3A CN201610191152A CN106653779A CN 106653779 A CN106653779 A CN 106653779A CN 201610191152 A CN201610191152 A CN 201610191152A CN 106653779 A CN106653779 A CN 106653779A
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- Prior art keywords
- substrate
- image sensor
- glass component
- mounting groove
- salient point
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 138
- 239000011521 glass Substances 0.000 claims abstract description 98
- 238000009434 installation Methods 0.000 claims abstract description 7
- 239000000565 sealant Substances 0.000 claims description 27
- 239000000853 adhesive Substances 0.000 claims description 19
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 238000004806 packaging method and process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 238000004026 adhesive bonding Methods 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000000465 moulding Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 238000013467 fragmentation Methods 0.000 description 8
- 238000006062 fragmentation reaction Methods 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003139 buffering effect Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/85951—Forming additional members, e.g. for reinforcing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
Provided is an image sensor package. The image sensor package includes a substrate in which an installation groove is formed; an image sensor which is installed in the installation groove; a glass member arranged to be separated from the top surface of the substrate; and a molding layer which is stacked to surround the side surface of the glass member.
Description
This application claims submit in Korean Intellectual Property Office on November 3rd, 2015
The priority and rights and interests of 10-2015-0153751 korean patent applications, the disclosure of the korean patent application
Content is contained in this by reference.
Technical field
It relates to a kind of image sensor package.
Background technology
Include various methods suitable for the example of the method for packing of the imageing sensor of camera, for example, on plate
Chip (chip-on-board, COB) encapsulation, chip on film (chip-on-flex, COF) printed circuit
Plate (PCB) encapsulation, glass-chip (chip-on-glass, COG) encapsulation, crystal wafer chip dimension envelope
Dress (WLCSP), imageing sensor shaping BGA (image sensor molded ballgrid array,
ImBGA) encapsulation, plastic leadless chip carrier (plastic leadless chip carrier, PLCC) envelope
Dress etc..
Meanwhile, as by image sensor application in the method for packing of vehicle, mainly using imageing sensor
Shaping BGA (ImBGA) method for packing or crystal wafer chip dimension encapsulation (WLCSP) method,
So can have problems in that：More techniques are needed due to encapsulating (COB) method than chip on board
And more complicated structure and cause manufacture packaging part cost increase.
Accordingly, it would be desirable to research and develop a kind of shaping BGA (ImBGA) encapsulation with existing imageing sensor
Method or crystal wafer chip dimension encapsulation (WLCSP) method compare can be easily manufactured can with height
By the image sensor package of property.
The content of the invention
The one side of the disclosure can provide a kind of image sensor package that can be realized and minimize.
According to the one side of the disclosure, a kind of image sensor package may include：Substrate, shape in substrate
Into there is mounting groove；Imageing sensor, in mounting groove；Glass component, is arranged to and substrate
Top surface separates；Shape layer, is stacked as surrounding the side surface of glass component.
According to another aspect of the present disclosure, a kind of image sensor package may include：Substrate, in substrate
It is formed with mounting groove；Imageing sensor, in mounting groove, and is electrically connected to base by bonding line
Plate；Salient point, is stacked on substrate, so that one end of bonding line is connected to salient point；Glass component, is set
The end thereof contacts with salient point are set to, and are arranged to separate with substrate.
Description of the drawings
According to the detailed description for carrying out with reference to the accompanying drawings, the above and other aspect of the disclosure, feature with
And further advantage will become apparent to, in the accompanying drawings：
Fig. 1 is the schematic structure of the image sensor package for illustrating the exemplary embodiment according to the disclosure
Make figure；
Fig. 2 is the enlarged drawing for illustrating the part A in Fig. 1；
Fig. 3 is the schematic structure of the first modified example for illustrating the image sensor package according to the disclosure
Make figure；
Fig. 4 is the enlarged drawing for illustrating the part B in Fig. 3；
Fig. 5 is the schematic structure of the second modified example for illustrating the image sensor package according to the disclosure
Make figure；
Fig. 6 is the enlarged drawing for illustrating the C portion in Fig. 5；
Fig. 7 is the schematic structure of the 3rd modified example for illustrating the image sensor package according to the disclosure
Make figure；
Fig. 8 is the enlarged drawing for illustrating the D parts in Fig. 7.
Specific embodiment
Hereinafter, the embodiment of present inventive concept is described with reference to the accompanying drawings.
However, present inventive concept can be implemented in many different forms, and it is not construed as office
It is limited to specific embodiment set forth herein.More specifically, there is provided these embodiments, so that the disclosure will
Be thoroughly with it is complete, and the scope of the present disclosure is fully conveyed to into those skilled in the art.
Throughout the specification, it will be appreciated that, when such as layer, region or the element of chip (substrate)
Be referred to as " being located at " another element " on ", " being connected to " another element or " being attached to " it is another
During element, the element directly " can be located at " another element " on ", direct " being connected to " another unit
Part or directly " being attached to " another element, or there may be other elements between them.Phase
Than under, when element be referred to as " located immediately at " another element " on ", " being directly connected to " it is another
When element or " being bonded directly to " another element, can not there is element between them or layer.
Identical label indicates all the time identical element.As used herein, term "and/or" include one or
Any and all combinations in more associated Listed Items.
It will be apparent that, although can here use term " first ", " second ", " the 3rd " etc. come
Various components, component, region, layer and/or part described, but these components, component, region, layer
And/or part should not be limited by these terms.These terms be only used for by a component, component, region,
Layer or part distinguish with another component, component, region, layer or part.Therefore, without departing from example
Property embodiment teaching in the case of, first component described below, component, region, layer or part can
Referred to as second component, component, region, layer or part.
For convenience of description, can here using with the term of space correlation (for example, " and ... on ",
" top ", " ... under " and " lower section " etc.), with describe an element as illustrated with
The relation of another element.It will be appreciated that the art in addition to the orientation illustrated in figure, with space correlation
The meaning of one's words is in including device different azimuth in use or operation.For example, if the device upset in figure,
Then be described as " " other elements " on " or the element or feature of " top " will be positioned as " "
Described other elements or feature " under " or " lower section ".Therefore, term " ... on " can basis
The specific direction of accompanying drawing and include " ... on " and " ... under " two kinds of orientation.Device can quilt
Other positioning (be rotated by 90 ° or at other orientations), and can be to as used herein with space correlation
Respective explanations are made in description.
Term as used herein is only used for describing specific embodiment, and is not intended to limit present inventive concept.Remove
Clearly dictate otherwise in non-context, singulative otherwise as used herein is also intended to include plural shape
Formula.It will be further understood that when term " including " used in this specification and/or "comprising", its row
Lift and there is described feature, entirety, step, operation, component, element and/or combinations thereof, and and
One or more further features, entirety, step, operation, component, element are not precluded the presence or addition of
And/or combinations thereof.
Hereinafter, by with reference to the schematic diagram of the embodiment for illustrating present inventive concept describing present inventive concept
Embodiment.In the accompanying drawings, for example, due to manufacturing technology and/or tolerance, shown shape can be estimated
Modification.Therefore, the embodiment of present inventive concept is not intended to be limited to the region being shown in which
Given shape, for example, is not limited to include due to the change of shape caused by manufacture.Following enforcement
Example also can be made up of one or combinations thereof.
The content of invention described below design can have various constructions, although here only proposes required
Construction, but not limited to this.
Fig. 1 is the schematic structure of the image sensor package for illustrating the exemplary embodiment according to the disclosure
Figure is made, Fig. 2 is the enlarged drawing for illustrating the part A in Fig. 1.
See figures.1.and.2, according to the image sensor package 100 of the exemplary embodiment of the disclosure
May include such as substrate 110, imageing sensor 120, salient point (stud bump) 130 and glass component 140.
Substrate 110 can be in plate shape, and may include from the recessed mounting groove 112 of its top surface.Meanwhile, figure
Pattern layer 114 may be formed on the top surface and basal surface of substrate 110, and substrate 110 may include for making shape
Into the via 116 of the electrical connection of patterned layer 114 on the top surface and basal surface in substrate 110.
Meanwhile, the soldered ball 118 for being connected with main substrate (not shown) may be formed at the bottom of substrate 110
On surface.Additionally, soldered ball 118 is formed as example having multiple lines and multiple rows.
So, because soldered ball 118 is formed on the basal surface of substrate 110, therefore can remove due to leading
On substrate (not shown) during installation base plate 110 thermal coefficient of expansion different and caused fatigue loads.
Additionally, mounting groove 112 may be formed to have the depth deeper than the thickness of imageing sensor 120, from
And allow imageing sensor 120 to be arranged in mounting groove 112.
So, because imageing sensor 120 is arranged in mounting groove 112, therefore image sensing can be reduced
The thickness of device packaging part 100.
Meanwhile, substrate 110 can be printed circuit board (PCB) (PCB).
Imageing sensor 120 may be installed in mounting groove 112.Meanwhile, imageing sensor 120 can be pacified
Dress is to be adhered to substrate 110 by adhesive S.Meanwhile, adhesive S can be used for imageing sensor 120
Substrate 110 is adhered to, and can be additionally used in the buffering when there is external impact and be applied to imageing sensor 120
Impact.
Meanwhile, as noted previously, as imageing sensor 120 is formed as the mounting groove for having than substrate 110
The little thickness of 112 depth, therefore imageing sensor 120 will not project from mounting groove 112.
As a result, the thickness of image sensor package 100 can be reduced.
Meanwhile, imageing sensor 120 and substrate 110 can W be each other by bonding line (bonding wire)
Electrical connection.As an example, one end of bonding line W may be connected to the top surface of substrate 110, bonding line W
The other end may be connected to the top surface of imageing sensor 120.
Here, the connection of bonding line W can be performed by salient point 130.
Additionally, bonding line W can be formed by such as gold.
Salient point 130 can be while on substrate 110 for the connection of bonding line W as above
For glass component 140 and substrate 110 to be set to be separated from each other.
That is, salient point 130 may be stacked in the patterned layer 114 of substrate 110, by bonding line W
It is attached to patterned layer 114.Additionally, salient point 130 can make glass component 140 be set to the top with substrate 110
Surface is separated by a predetermined interval.
Stated differently, since glass component 140 is installed to be placed on salient point 130, therefore can be by glass
Glass component 140 and substrate 110 are set to spaced apart from each other at predetermined intervals.
So, because glass component 140 can be arranged to separate in advance with substrate 110 by salient point 130
Fixed interval, therefore can remove bonding line W is applied to due to the contact of bonding line W and glass component 140
Fatigue load.It is therefore possible to prevent para-linkage line W causes to damage.
Glass component 140 can be arranged to separate with the top surface of substrate 110.Additionally, glass component 140
Can be installed to be and substrate 110 is adhered to by adhesive S.That is, for installing glass component 140
Adhesive S may be stacked on around the mounting groove 112 of substrate 110.Meanwhile, salient point 130 can be set
In to be enclosed in adhesive S.As an example, adhesive S can be stacked as only making the top table of salient point 130
Face is externally exposed.
Glass component 140 can be optical glass.
As noted previously, as imageing sensor 120 is arranged to be inserted into the mounting groove 112 of substrate 110
In, therefore the thickness of image sensor package 100 can be reduced, so as to realize miniaturization.Additionally, by
Imageing sensor is connected in the bonding line W for imageing sensor 120 and the electrical connection of substrate 110
120 top surface and the top surface of substrate 110, therefore the total of image sensor package 100 can be reduced
Size.
Further, since glass component 140 can be arranged to separate in advance with substrate 110 by salient point 130
Fixed interval, therefore can remove bonding line W is applied to due to the contact of bonding line W and glass component 140
Fatigue load, so as to prevent para-linkage line W cause damage.
Hereinafter, the modified example of the image sensor package according to the disclosure is described with reference to the accompanying drawings.
Fig. 3 is the schematic structure of the first modified example for illustrating the image sensor package according to the disclosure
Figure is made, Fig. 4 is the enlarged drawing for illustrating the part B in Fig. 3.
With reference to Fig. 3 and Fig. 4, image sensor package 200 may include such as substrate 110, image sensing
Device 120, salient point 130, glass component 140, shape layer 250 and sealant 260.
Substrate 110 can be in plate shape, and may include from the recessed mounting groove 112 of its top surface.Meanwhile, figure
Pattern layer 114 may be formed on the top surface and basal surface of substrate 110, and substrate 110 may include for making shape
Into the via 116 of the electrical connection of patterned layer 114 on the top surface and basal surface in substrate 110.
Meanwhile, the soldered ball 118 for being connected with main substrate (not shown) may be formed at the bottom of substrate 110
On surface.Additionally, soldered ball 118 is formed as example having multiple lines and multiple rows.
So, because soldered ball 118 is formed on the basal surface of substrate 110, therefore can remove due to leading
The difference of thermal coefficient of expansion caused fatigue load during installation base plate 110 on substrate (not shown).
Additionally, mounting groove 112 may be formed to have the depth deeper than the thickness of imageing sensor 120, from
And allow imageing sensor 120 to be arranged in mounting groove 112.
So, because imageing sensor 120 is arranged in mounting groove 112, therefore image sensing can be reduced
The thickness of device packaging part 200.
Meanwhile, substrate 110 can be printed circuit board (PCB) (PCB).
Imageing sensor 120 may be installed in mounting groove 112.Meanwhile, imageing sensor 120 can be pacified
Dress is to be adhered to substrate 110 by adhesive S.Meanwhile, adhesive S can be used for imageing sensor 120
Substrate 110 is adhered to, and can be additionally used in the buffering when there is external impact and be applied to imageing sensor 120
Impact.
Meanwhile, as noted previously, as imageing sensor 120 is formed as the mounting groove for having than substrate 110
The little thickness of 112 depth, therefore imageing sensor 120 will not project from mounting groove 112.
As a result, the thickness of image sensor package 200 can be reduced.
Meanwhile, imageing sensor 120 and substrate 110 can be electrically connected to each other by bonding line W.As showing
Example, one end of bonding line W may be connected to the top surface of substrate 110, and the other end of bonding line W can be even
It is connected to the top surface of imageing sensor 120.
Here, the connection of bonding line W can be performed by salient point 130.
Additionally, bonding line W can be formed by such as gold.
Salient point 130 can be installed on substrate 110 the same of the connection for bonding line W as above
When for glass component 140 and substrate 110 to be set to be separated from each other.
That is, salient point 130 may be stacked in the patterned layer 114 of substrate 110, by bonding line W
It is attached to patterned layer 114.Additionally, glass component 140 can be set to salient point 130 top with substrate 110
Surface is separated by a predetermined interval.
Stated differently, since glass component 140 is installed to be placed on salient point 130, therefore can be by glass
Glass component 140 and substrate 110 are set to spaced apart from each other at predetermined intervals.
So, because glass component 140 can be arranged to separate in advance with substrate 110 by salient point 130
Fixed interval, therefore can remove bonding line W is applied to due to the contact of bonding line W and glass component 140
Fatigue load.It is therefore possible to prevent para-linkage line W causes to damage.
Glass component 140 can be arranged to separate with the top surface of substrate 110.Additionally, glass component 140
Can be installed to be and substrate 110 is attached to by sealant 260.Meanwhile, salient point 130 can be arranged to envelope
Close in sealant 260.As an example, sealant 260 can be stacked as only making the top table of salient point 130
Face is externally exposed.
Shape layer 250 can be stacked as surrounding the side surface of glass component 140.That is, glass structure
The side surface of part 140 is because shape layer 250 is without being externally exposed.But, although this exemplary reality
The situation for being illustrated the side surface that shape layer 250 only surrounds glass component 140 is applied, but the disclosure is not
It is limited to this.For example, shape layer 250 can also be stacked as the edge of the top surface for surrounding glass component 140.
So, because shape layer 250 can be stacked as surrounding the side surface of glass component 140, so as to inhale
Receipts be applied to glass component 140 side surface external impact, therefore can prevent glass component 140 due to
External impact and fragmentation.
Even if additionally, staying in glass due to the foreign matter for being cut and being occurred when manufacturing glass component 140
In the case of on the side surface of component 140, enclose because the side surface of glass component 140 is formed layer 250
Firmly, therefore can prevent that the dispersion of foreign matter occurs due to the fragmentation of glass component 140.
Sealant 260 may be stacked on around the edge of mounting groove 112, mounting groove 112 and imageing sensor
On at least one of 120 edge of top surface.Meanwhile, sealant 260 can include epoxy material.
Meanwhile, as Fig. 4 is illustrated in greater detail, sealant 260 can be filled in by imageing sensor 120
Top surface edge, the inside of mounting groove 112, the top of mounting groove 112, the and of glass component 140
In the space that substrate 110 is formed.
Additionally, bonding line W can be closed in sealant 260.
So, because bonding line W is arranged to be enclosed in sealant 260, therefore para-linkage can be prevented
Line W causes to damage.
Additionally, the dispersion that sealant 260 prevents from foreign matter when mounting groove 112 is formed can be passed through, and
And foreign matter can be prevented to be introduced in the top surface side of imageing sensor 120.
As noted previously, as imageing sensor 120 is arranged to be inserted into the mounting groove 112 of substrate 110
In, therefore the thickness of image sensor package 200 can be reduced.Further, since being used for imageing sensor
120 and the bonding line W of electrical connection of substrate 110 are connected to the top surface and substrate of imageing sensor 120
110 top surface, therefore the overall size of image sensor package 200 can be reduced.
Further, since glass component 140 can be arranged to separate in advance with substrate 110 by salient point 130
Fixed interval, therefore can remove bonding line W is applied to due to the contact of bonding line W and glass component 140
Fatigue load, so as to prevent para-linkage line W cause damage.
Further, since shape layer 250 can be stacked as surrounding the side surface of glass component 140, so as to inhale
Receipts are applied to the external impact of the side surface of glass component 140, can prevent glass component 140 due to outside
Impact and fragmentation.
Even if additionally, staying in glass due to the foreign matter for being cut and being occurred when manufacturing glass component 140
In the case of on the side surface of component 140, enclose because the side surface of glass component 140 is formed layer 250
Firmly, therefore can prevent that the dispersion of foreign matter occurs due to the fragmentation of glass component 140.
Sealant 260 can be passed through prevents the dispersion of foreign matter when mounting groove 112 is formed, and can prevent
Only foreign matter is introduced in the top surface side of imageing sensor 120 from outside.
Fig. 5 is the schematic structure of the second modified example for illustrating the image sensor package according to the disclosure
Figure is made, Fig. 6 is the enlarged drawing for illustrating the C portion in Fig. 5.
With reference to Fig. 5 and Fig. 6, image sensor package 300 may include such as substrate 110, image sensing
Device 120, salient point 130, glass component 140, shape layer 250 and sealant 360.
Substrate 110 can be in plate shape, and may include from the recessed mounting groove 112 of its top surface.Meanwhile, figure
Pattern layer 114 may be formed on the top surface and basal surface of substrate 110, and substrate 110 may include for making shape
Into the via 116 of the electrical connection of patterned layer 114 on the top surface and basal surface in substrate 110.
Meanwhile, the soldered ball 118 for being connected with main substrate (not shown) may be formed at the bottom of substrate 110
On surface.Additionally, soldered ball 118 is formed as example having multiple lines and multiple rows.
So, because soldered ball 118 is formed on the basal surface of substrate 110, therefore can remove due to leading
The difference of thermal coefficient of expansion caused fatigue load during installation base plate 110 on substrate (not shown).
Additionally, mounting groove 112 may be formed to have the depth deeper than the thickness of imageing sensor 120, from
And allow imageing sensor 120 to be arranged in mounting groove 112.
So, because imageing sensor 120 is arranged in mounting groove 112, therefore image sensing can be reduced
The thickness of device packaging part 300.
Meanwhile, substrate 110 can be printed circuit board (PCB) (PCB).
Imageing sensor 120 may be installed in mounting groove 112.Meanwhile, imageing sensor 120 can be pacified
Dress is to be adhered to substrate 110 by adhesive S.Meanwhile, adhesive S can be used for imageing sensor 120
Substrate 110 is adhered to, and can be additionally used in the buffering when there is external impact and be applied to imageing sensor 120
Impact.
Meanwhile, as noted previously, as imageing sensor 120 is formed as the mounting groove for having than substrate 110
The little thickness of 112 depth, therefore imageing sensor 120 will not project from mounting groove 112.
As a result, the thickness of image sensor package 300 can be reduced.
Meanwhile, imageing sensor 120 and substrate 110 can be electrically connected to each other by bonding line W.As showing
Example, one end of bonding line W may be connected to the top surface of substrate 110, and the other end of bonding line W can be even
It is connected to the top surface of imageing sensor 120.
Here, the connection of bonding line W can be performed by salient point 130.
Additionally, bonding line W can be formed by such as gold.
Salient point 130 can be installed on substrate 110 the same of the connection for bonding line W as above
When for making glass component 140 and substrate 110 be set to be separated from each other.
That is, salient point 130 may be stacked in the patterned layer 114 of substrate 110, by bonding line W
It is attached to patterned layer 114.Additionally, glass component 140 can be set to salient point 130 top with substrate 110
Surface is separated by a predetermined interval.
Stated differently, since glass component 140 is installed to be placed on salient point 130, therefore can be by glass
Glass component 140 and substrate 110 are set to spaced apart from each other at predetermined intervals.
So, because glass component 140 can be arranged to separate in advance with substrate 110 by salient point 130
Fixed interval, therefore can remove bonding line W is applied to due to the contact of bonding line W and glass component 140
Fatigue load.It is therefore possible to prevent para-linkage line W causes to damage.
Glass component 140 can be arranged to separate with the top surface of substrate 110.Additionally, glass component 140
Can be installed to be and substrate 110 is attached to by sealant 360.Meanwhile, salient point 130 can be arranged to envelope
Close in sealant 360.As an example, sealant 360 can be stacked as only making the top table of salient point 130
Face is externally exposed.
Shape layer 250 can be stacked as surrounding the side surface of glass component 140.That is, glass structure
The side surface of part 140 is because shape layer 250 is without being externally exposed.But, although this exemplary reality
The situation for being illustrated the side surface that shape layer 250 only surrounds glass component 140 is applied, but the disclosure is not
It is limited to this.For example, shape layer 250 can also be stacked as the edge of the top surface for surrounding glass component 140.
So, because shape layer 250 can be stacked as surrounding the side surface of glass component 140, so as to inhale
Receipts be applied to glass component 140 side surface external impact, therefore can prevent glass component 140 due to
External impact and fragmentation.
Even if additionally, staying in glass due to the foreign matter for being cut and being occurred when manufacturing glass component 140
In the case of on the side surface of component 140, enclose because the side surface of glass component 140 is formed layer 250
Firmly, therefore can prevent that the dispersion of foreign matter occurs due to the fragmentation of glass component 140.
Sealant 360 may include：First sealant 362, is stacked on the edge of imageing sensor 120；
Second sealant 364, is filled in the space between substrate 110 and glass component 140.
First sealant 362 may be stacked on the edge of imageing sensor 120, for preventing foreign matter quilt
In being incorporated into the image capture area of imageing sensor 120.Additionally, the second sealant 364 can be filled in
In space between substrate 110 and glass component 140, to prevent foreign matter to be introduced in substrate 110 from outside
Mounting groove 112 in.
Meanwhile, two ends of bonding line W can be closed in sealant 360.
So, because two ends of bonding line W are arranged to be enclosed in sealant 360, therefore can
Prevent para-linkage line W from causing to damage.
As noted previously, as imageing sensor 120 is arranged to be inserted into the mounting groove 112 of substrate 110
In, therefore the thickness of image sensor package 300 can be reduced, so as to realize miniaturization.Additionally, by
Imageing sensor is connected in the bonding line W for imageing sensor 120 and the electrical connection of substrate 110
120 top surface and the top surface of substrate 110, therefore the total of image sensor package 300 can be reduced
Size.
Further, since glass component 140 can be arranged to separate in advance with substrate 110 by salient point 130
Fixed interval, therefore can remove bonding line W is applied to due to the contact of bonding line W and glass component 140
Fatigue load, so as to prevent para-linkage line W cause damage.
Further, since shape layer 250 can be stacked as surrounding the side surface of glass component 140, so as to inhale
Receipts be applied to glass component 140 side surface external impact, therefore can prevent glass component 140 due to
External impact and fragmentation.
Even if additionally, staying in glass due to the foreign matter for being cut and being occurred when manufacturing glass component 140
In the case of on the side surface of component 140, enclose because the side surface of glass component 140 is formed layer 250
Firmly, therefore can prevent that the dispersion of foreign matter occurs due to the fragmentation of glass component 140.
Sealant 360 can be passed through prevents the dispersion of foreign matter when mounting groove 112 is formed, and can prevent
Only foreign matter is introduced in the top surface side of imageing sensor 120 from outside.
Fig. 7 is the schematic structure of the 3rd modified example for illustrating the image sensor package according to the disclosure
Figure is made, Fig. 8 is the enlarged drawing for illustrating the D parts in Fig. 7.
With reference to Fig. 7 and Fig. 8, image sensor package 400 may include substrate 110, imageing sensor
120th, adhesive 430 and glass component 140.
Substrate 110 can be in plate shape, and may include from the recessed mounting groove 112 of its top surface.Meanwhile, figure
Pattern layer 114 may be formed on the top surface and basal surface of substrate 110, and substrate 110 may include for making shape
Into the via 116 of the electrical connection of patterned layer 114 on the top surface and basal surface in substrate 110.
Meanwhile, the soldered ball 118 for being connected with main substrate (not shown) may be formed at the bottom of substrate 110
On surface.Additionally, soldered ball 118 is formed as example having multiple lines and multiple rows.
So, because soldered ball 118 is formed on the basal surface of substrate 110, therefore can remove in main substrate
It is tired caused by the difference of thermal coefficient of expansion during installation base plate 110 on (not shown).
Additionally, mounting groove 112 may be formed to have the depth deeper than the thickness of imageing sensor 120, from
And allow imageing sensor 120 to be arranged in mounting groove 112.
So, because imageing sensor 120 is arranged in mounting groove 112, therefore image sensing can be reduced
The thickness of device packaging part 400.
Meanwhile, substrate 110 can be printed circuit board (PCB) (PCB).
Imageing sensor 120 may be installed in mounting groove 112.Meanwhile, imageing sensor 120 can be pacified
Dress is to be adhered to substrate 110 by adhesive S.Meanwhile, adhesive S can be used for imageing sensor 120
Substrate 110 is adhered to, and can be additionally used in the buffering when there is external impact and be applied to imageing sensor 120
Impact.
Meanwhile, as noted previously, as imageing sensor 120 is formed as the mounting groove for having than substrate 110
The little thickness of 112 depth, therefore imageing sensor 120 will not project from mounting groove 112.
As a result, the thickness of image sensor package 400 can be reduced.
Meanwhile, imageing sensor 120 and substrate 110 can be electrically connected to each other by bonding line W.As showing
Example, one end of bonding line W may be connected to the top surface of substrate 110, and the other end of bonding line W can be even
It is connected to the top surface of imageing sensor 120.
Here, the connection of bonding line W can be performed by salient point 364.
Additionally, bonding line W can be formed by such as gold.
Adhesive 430 may be provided between glass component 140 and substrate 110, and may include to be led by non-
The separator 432 that electric material is formed.Meanwhile, for the salient point 364 of the connection of bonding line W and substrate 110
May be stacked on the top surface of substrate 110, separator 432 may be formed to have the size than salient point 364
Big size.
That is, glass component 140 and substrate 110 can be arranged by separator 432 dividing each other
Open predetermined space.
Glass component 140 can be arranged to separate with the top surface of substrate 110.Additionally, glass component 140
Can be installed to be and substrate 110 is adhered to by adhesive 430.That is, for installing glass component
140 adhesive 430 may be stacked on around the mounting groove 112 of substrate 110.Meanwhile, salient point 364 can quilt
It is set to be enclosed in adhesive 430.
As noted previously, as imageing sensor 120 is arranged to be inserted into the mounting groove 112 of substrate 110
In, therefore the thickness of image sensor package 400 can be reduced, so as to realize miniaturization.Additionally, by
Imageing sensor is connected in the bonding line W for imageing sensor 120 and the electrical connection of substrate 110
120 top surface and the top surface of substrate 110, therefore the total of image sensor package 400 can be reduced
Size.
Further, since glass component 140 can be arranged by the separator being included in adhesive 430
432 is spaced apart from each other at predetermined intervals, thus can remove due to bonding line W and glass component 140 contact and
The fatigue load of bonding line W is applied to, so as to prevent para-linkage line W from causing to damage.
As described above, according to the exemplary embodiment of the disclosure, image sensor package can be miniaturized.
Although having been shown above and describing exemplary embodiment, for those skilled in the art will be bright
It is aobvious, in the case of without departing from the scope of the present invention being defined by the claims, modification can be made
And change.
Claims (16)
1. a kind of image sensor package, including：
Substrate, is formed with mounting groove in substrate；
Imageing sensor, in mounting groove；
Glass component, is arranged to separate with the top surface of substrate；
Shape layer, is stacked as surrounding the side surface of glass component.
2. image sensor package as claimed in claim 1, wherein, described image sensor and base
Plate is electrically connected to each other by bonding line.
3. image sensor package as claimed in claim 2, described image sensor packaging part is also wrapped
Including allows glass component to be arranged to the salient point separated with substrate.
4. image sensor package as claimed in claim 3, wherein, for imageing sensor and base
The bonding line of the electrical connection of plate is connected to the salient point for preventing the contact between bonding line and glass component.
5. image sensor package as claimed in claim 1, described image sensor packaging part is also wrapped
Include be stacked on around the edge of mounting groove, mounting groove and imageing sensor top surface edge at least
Sealant on one.
6. image sensor package as claimed in claim 5, wherein, the sealant includes epoxy
Material.
7. image sensor package as claimed in claim 1, wherein, described image sensor is pacified
Dress is to substrate by adhesive bonding.
8. image sensor package as claimed in claim 1, wherein, for carrying out on main substrate
The multiple soldered balls installed are formed on the basal surface of substrate.
9. image sensor package as claimed in claim 3, described image sensor packaging part is also wrapped
Include and be arranged between glass component and substrate and including the adhesive of the separator formed by non-conducting material.
10. image sensor package as claimed in claim 9, wherein, for imageing sensor and
One end of the bonding line of the electrical connection of substrate is connected to salient point, and separator with bigger than the size of salient point
Size.
A kind of 11. image sensor packages, including：
Substrate, is formed with mounting groove in substrate；
Imageing sensor, in mounting groove, and is electrically connected to substrate by bonding line；
Salient point, is stacked on substrate, so that one end of bonding line is connected to salient point；
Glass component, is arranged to the end thereof contacts with salient point, and is arranged to separate with substrate.
12. image sensor packages as claimed in claim 11, described image sensor packaging part is also
Including being stacked as surrounding the shape layer of the side surface of glass component.
13. image sensor packages as claimed in claim 12, described image sensor packaging part is also
Including be stacked on around the edge of mounting groove, mounting groove and imageing sensor top surface edge in extremely
Sealant on few one.
14. image sensor packages as claimed in claim 13, wherein, the sealant includes ring
Oxygen material.
15. image sensor packages as claimed in claim 11, wherein, for carrying out main substrate
Multiple soldered balls of installation be formed on the basal surface of substrate.
16. image sensor packages as claimed in claim 1, wherein, described image sensor quilt
It is installed as by adhesive bonding to substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150153751A KR102126418B1 (en) | 2015-11-03 | 2015-11-03 | Image sensor package |
| KR10-2015-0153751 | 2015-11-03 |
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| Publication Number | Publication Date |
|---|---|
| CN106653779A true CN106653779A (en) | 2017-05-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610191152.3A Pending CN106653779A (en) | 2015-11-03 | 2016-03-30 | Image sensor package |
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|---|---|
| KR (1) | KR102126418B1 (en) |
| CN (1) | CN106653779A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112366142A (en) * | 2021-01-14 | 2021-02-12 | 广东佛智芯微电子技术研究有限公司 | Chip packaging method and chip packaging structure for reducing lead bonding height |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220037069A (en) | 2020-09-17 | 2022-03-24 | 삼성전자주식회사 | Semiconductor package and method for fabricating the same |
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| CN1519948A (en) * | 2003-02-06 | 2004-08-11 | ������������ʽ���� | Semiconductor wafer, solid imaging element optical element modular and mfg. method for both |
| US20040217451A1 (en) * | 2002-11-14 | 2004-11-04 | Sai-Mun Lee | Semiconductor packaging structure |
| CN1905144A (en) * | 2005-05-27 | 2007-01-31 | 阿瓦戈科技通用Ip(新加坡)股份有限公司 | Methods for packaging an image sensor and a packaged image sensor |
| CN101047195A (en) * | 2006-03-29 | 2007-10-03 | 松下电器产业株式会社 | Semiconductor imaging device and method for manufacturing the same |
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| JP4827593B2 (en) | 2005-07-19 | 2011-11-30 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
| WO2008032404A1 (en) * | 2006-09-15 | 2008-03-20 | Fujitsu Microelectronics Limited | Semiconductor device and method for manufacturing same |
| KR100866619B1 (en) * | 2007-09-28 | 2008-11-03 | 삼성전기주식회사 | Image sensor module of wafer level and manufacturing method thereof, and camera module |
| KR20130137993A (en) * | 2012-06-08 | 2013-12-18 | 삼성전자주식회사 | Image sensor package |
| KR20150101571A (en) * | 2014-02-27 | 2015-09-04 | 천병태 | Image sensor chip package |
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2015
- 2015-11-03 KR KR1020150153751A patent/KR102126418B1/en active IP Right Grant
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| US20040217451A1 (en) * | 2002-11-14 | 2004-11-04 | Sai-Mun Lee | Semiconductor packaging structure |
| CN1519948A (en) * | 2003-02-06 | 2004-08-11 | ������������ʽ���� | Semiconductor wafer, solid imaging element optical element modular and mfg. method for both |
| CN1905144A (en) * | 2005-05-27 | 2007-01-31 | 阿瓦戈科技通用Ip(新加坡)股份有限公司 | Methods for packaging an image sensor and a packaged image sensor |
| CN101047195A (en) * | 2006-03-29 | 2007-10-03 | 松下电器产业株式会社 | Semiconductor imaging device and method for manufacturing the same |
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| CN112366142A (en) * | 2021-01-14 | 2021-02-12 | 广东佛智芯微电子技术研究有限公司 | Chip packaging method and chip packaging structure for reducing lead bonding height |
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| KR20170051972A (en) | 2017-05-12 |
| KR102126418B1 (en) | 2020-06-24 |
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