CN106646576A - High gain analog amplification device suitable for strong nuclear radiation environment - Google Patents

High gain analog amplification device suitable for strong nuclear radiation environment Download PDF

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Publication number
CN106646576A
CN106646576A CN201611063333.4A CN201611063333A CN106646576A CN 106646576 A CN106646576 A CN 106646576A CN 201611063333 A CN201611063333 A CN 201611063333A CN 106646576 A CN106646576 A CN 106646576A
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China
Prior art keywords
amplifier
voltage
high gain
nuclear radiation
radiation environment
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CN201611063333.4A
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Chinese (zh)
Inventor
曹宏睿
张斌
赵金龙
胡立群
盛秀丽
牛璐莹
陈开云
陈晔斌
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Hefei Institutes of Physical Science of CAS
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Hefei Institutes of Physical Science of CAS
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Priority to CN201611063333.4A priority Critical patent/CN106646576A/en
Publication of CN106646576A publication Critical patent/CN106646576A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)

Abstract

The invention discloses a high gain analog amplification device suitable for the strong nuclear radiation environment. The high gain analog amplification device comprises a detector, a JFET type mutual resistance fast amplifier, a high speed and high gain voltage amplifier, an active filtering voltage driver and an oscilloscope. Soft X-rays or light sources are detected by the detector and current signals are generated. The current signals enter the JFET type mutual resistance fast amplifier through long-distance signal transmission and the current signals are converted into voltage signals through the first stage of the JFET type mutual resistance fast amplifier. The voltage signals are driven by the second stage of the high speed and high gain voltage amplifier and the third stage of the active filtering voltage driver, and the final output signals are transmitted to the oscilloscope to perform signal waveform display through long-distance transmission. The high gain analog amplification device has the capacity of resisting neutron irradiation and gamma-irradiation so that the system is enabled to normally work under the strong nuclear radiation environment; and the system has high gain on the basis of meeting working resisting the strong nuclear radiation environment.

Description

A kind of high-gain Simulation scale-up device suitable for strong nuclear radiation environment
Technical field
The present invention relates to the signal amplifier technical field of strong nuclear radiation environment, more particularly to it is a kind of suitable for strong nuclear radiation The high-gain Simulation scale-up device of environment.
Background technology
By taking International Thermal-Nuclear Experimental Reactor ITER as an example, in DT (deuterium tritium) stage of reaction, add up the neutron spoke of 4700 hours It is 1.6 × 10 according to fluence13n/cm2, the accumulative irradiation doses of γ are 329Gy.In view of factor of safety Q=8 that ITER is required, then The resistance to irradiation for seeking the electronic system in the region is：Neutron irradiation fluence 1.28 × 1014n/cm2, γ adds up irradiation dose 2632Gy.In addition, in some special occasions, such as fissioning under the survey of nuclear power station reactor core core and other strong radiation environments, for these The instrument in field is generally required for possessing stronger Radiation hardness, in the market without meet simultaneously can anti-neutron irradiation and The high-gain (1 × 10 of γ irradiation7V/A) analogue amplifier.
The content of the invention
The object of the invention is exactly to make up the defect of prior art, there is provided a kind of height suitable for strong nuclear radiation environment increases Beneficial Simulation scale-up device.
The present invention is achieved by the following technical solutions：
A kind of high-gain Simulation scale-up device suitable for strong nuclear radiation environment, includes detector, JFET type mutual resistance fast Amplifier, high speed high gain voltage amplifier, active power filtering voltage driver and oscillograph, grenz ray or light source it is described Detector detect and produce current signal, current signal enters the fast amplifier of JFET type mutual resistance through distant signal transmission, Current signal is converted to voltage signal after the fast amplifier of first order JFET type mutual resistance, and voltage signal sequentially passes through again second Level high speed high gain voltage amplifier and third level active power filtering voltage driver drive, final output signal long-distance transmissions Signal waveform is carried out to oscillograph to show.
Described analog linearity voltage stabilizing chip RHFL4913 and analog linearity voltage stabilizing chip RHFL7913A is JFET type mutual resistance Fast amplifier, high speed high gain voltage amplifier and active power filtering voltage driver offer ± 6V voltages.
Model AD8066 of the described fast amplifier of JFET type mutual resistance.
By various nuclear radiation protection measures and test so that the amplifier can be used in strong neutron and strong gamma mixing spoke According to environment in.Wherein, the dosage of resistance to gamma irradiation is accumulative can reach 200Gy, and resistance to neutron exposure is accumulative to can reach 2 × 1012n/cm2。
By chip type selecting, using the acp chip for having resistance to strong nuclear radiation, including integrated operational amplifier chip and power supply Chip.Tested according to a large amount of Flouride-resistani acid phesphatases that early stage is carried out to device, the amplifier chip for filtering out is than the general general-purpose chip spoke of resistance to core 1 to 2 magnitude is higher by according to level, the integrated operational amplifier AD8066 for selecting and analog linearity voltage-stabilized power supply chip RHFL4913, RHFL7913A can be tested by strong gamma and strong neutron irradiation；At the same time, in circuit design, height is employed The method of density integration technology and circuit stacks, tens paths are integrated to together, to reduce single pass raying area, It is overall by irradiation probability so as to reduce；On this basis, by amplifier entirety Antiradiation experiment, find out easy raying and damage The circuit of wound, and carry out independent radiation hardened.
By rational circuit design so that the gain of amplifier may be up to 1 × 107V/A。
It is an advantage of the invention that：The present invention possesses anti-neutron irradiation (10 simultaneously12n/cm2) and anti-γ irradiation ability (200Gy), make system can under strong nuclear radiation environment normal work；On the basis of working in the case where anti-strong nuclear radiation environment is met, Possesses high-gain (1 × 107V/A)。
Description of the drawings
Fig. 1 is present configuration block diagram.
Fig. 2 is this amplifier circuit schematic diagram.
Fig. 3 is γ irradiation test schematic diagrams.
First group of amplifier output difference signal amplitude of Fig. 4 and gamma-irradiation doses change figure.
Specific embodiment
As shown in Figure 1, 2, a kind of high-gain Simulation scale-up device suitable for strong nuclear radiation environment, include detector 1, The fast amplifier 2 of JFET type mutual resistance, high speed high gain voltage amplifier 3, active power filtering voltage driver 4 and oscillograph 5, soft X is penetrated Line or light source detect and produce current signal by described detector 1, and current signal is entered through distant signal transmission The fast amplifier 2 of JFET type mutual resistance, current signal is converted to voltage signal after the fast amplifier 2 of first order JFET type mutual resistance, Voltage signal sequentially passes through again second level high speed high gain voltage amplifier 3 and third level active power filtering voltage driver 4 drives, Final output signal long-distance transmissions carry out signal waveform and show to oscillograph 5.
Described analog linearity voltage stabilizing chip RHFL49137 and analog linearity voltage stabilizing chip RHFL7913A6 is that JFET types are mutual Fast amplifier, high speed high gain voltage amplifier and active power filtering voltage driver offer ± 6V voltages are provided.
Model AD8066 of the described fast amplifier 2 of JFET type mutual resistance.
In circuit design and in test experiments, it is product synthesis Flouride-resistani acid phesphatase energy to find and improve radiation-resistant weak link The key of power.Wherein through test, power module is that circuit is most susceptible to damaged portion in gamma and neutron irradiation, The common power chip (such as LT1963A, LT3015) that the design initial stage uses can only it is resistance to by 100Gy gamma irradiations or 1011n/cm2Neutron irradiation, is the bottleneck for improving circuit entirety radioresistance level.Later stage improves and is employed in circuit RHFL4913 and RHFL7913A substitutes LT1963A and LT3015 and the overall capability of resistance to radiation of circuit is greatly improved. RHFL4913 and RHFL7913A are the chips exclusively for high-energy physics experiment and other strong nuclear radiation Environment Designs, its it is heavy from The resistivity of sub- effect, locking single particle and Single event upset effecf can reach neutron more than 2 × 1014/cm2, gamma surpass Cross 2 × 1014/cm2, accumulative irradiation dose can also reach 300Krad.
Amplifier reduces circuit irradiated area, and the method for passing through lamination as far as possible in design and circuit layout, weight The chip gripper wanted is in the inside of lamination, it is also possible to which the low energy ray for stopping incident direction reaches core component, reduces particle and core The probability that center portion part reacts.
The anti-gamma irradiation test principle figure of preamplifier as shown in figure 3, carried out test.
Test environment：
1st, radiation source：Cobalt -60
2nd, source radiation activity is radiated：8.5×1014Bq
3rd, sample spot is away from source 275cm, away from the high 46cm of table top, absorbed dose rate 0.5Gy/min
Test purpose：
Radioresistance test, the change of test core device performance parameter in radiation environment are carried out to amplifier.
Testing process and content：
Test is divided into 3 groups, first group and second group for experimental group, and the 3rd group is control group, connection, between core is tested For irradiation zone, the power supply of system and signal detection are by 35 meters of cable connections to beyond irradiation zone.By PXI cabinet sums Signal is acquired according to capture card and is detected.
First group：1-15 passages are signal, and 16 passages are power supply；Second group：1-16 passages are all signal；3rd group： 1-15 passages are signal, and 16 passages are power supply.
Absorbed dose of radiation is 0.5Gy/min, is divided into three time periods and completes, and 100min, 100min, 200min are corresponding Integral dose is：50Gy, 50Gy, 100Gy, total accumulative amount of radiation is：200Gy.
Signal input is provided to detector by fluorescent lamp, for the uniformity for ensureing to be input into measurement, whole The position of the position of light source and detector need to keep constant in test process.
Test result：
Three groups of data fundamemtal phenomenas are consistent.With first group of data instance, as shown in figure 4, the amplifier at Sheng Yuan, drop source Signal can shift, and dosage is in 0Gy, 50Gy, 100Gy, 200Gy, it can be seen that this 4 points substantially produce letter because of drop source Number decline.Contrast signal amplitude does not have to increase with irradiation dose and produces significant change in irradiation process, irradiation is started and Signal amplitude contrast after irradiation terminates does not find that amplitude increases or reduces yet.Secondly in irradiation process, without discovery Interference signal is produced, and the output signal ratio of preamplifier is more normal.
The conclusion of gamma irradiation experiment：
When γ sources are risen, the biasing of amplifier output signal can increase, and about 200mV or so, γ falls in source When, biasing can drop back to initial value again.After γ radiation tests terminate, in laboratory to front putting capable test, the 1st group and the 2nd group of (spoke into According to) data of the every passage of data and the 3rd group (without irradiation) per passage are basically identical, do not find irradiation damage phenomenon.Therefore base This determination, the change of signal biasing is probably derived from response of the detector to γ sources so that caused by the front input put changes.
Within the dosage of 200Gy, circuit still can normal work.
In addition, system has carried out the strong neutron irradiation survey of accelerator deuterium-tritium reaction in China Engineering Physics Research Institute Examination.
Test condition：
Radiation source：Deuterium tritium 14.8MeV
Neutron emission rate:～5 × 1010n/s
Radiation source and system under test (SUT) distance:120mm
System under test (SUT) present position neutron flux:～2.2 × 107n/cm2s
Radiated time:28 hours, total neutron flux was more than 2.23 × 1012n/cm2
Test result：16 passage preamplifier output signals do not change, so as to tentatively infer detector and front Amplifier is put in irradiation and after receiving irradiation, defective damage is not produced.
By preamplifier and the anti-neutron irradiation of detector and gamma irradiation experiment, before this patent design can be obtained Putting amplifier can tolerate the total neutron flux of neutron irradiation for 2.2 × 1012n/cm2, the accumulative irradiation doses of γ are 200Gy, than Conventional amplifiers radiation-resistant property is higher by 1 to 2 orders of magnitude.But only can not still meet ITER by the radiation resistance of circuit itself The requirement of strong nuclear radiation environment, therefore also need to just to be finally reached by the design with reference to outer layer nuclear radiation shield body and be applied to The strong nuclear radiation environmental demand of fusion reactor.

Claims (3)

1. a kind of high-gain Simulation scale-up device suitable for strong nuclear radiation environment, it is characterised in that：Include detector, JFET The fast amplifier of type mutual resistance, high speed high gain voltage amplifier, active power filtering voltage driver and oscillograph, grenz ray or light Source detects and produces current signal by described detector, and it is fast that current signal enters JFET type mutual resistance through distant signal transmission Amplifier, current signal is converted to voltage signal after the fast amplifier of first order JFET type mutual resistance, and voltage signal is again successively Drive through second level high speed high gain voltage amplifier and third level active power filtering voltage driver, final output signal is remote Distance Transmission carries out signal waveform and shows to oscillograph.
2. a kind of high-gain Simulation scale-up device suitable for strong nuclear radiation environment according to claim 1, its feature exists In：Analog linearity voltage stabilizing chip RHFL4913 and analog linearity voltage stabilizing chip RHFL7913A are put soon to described JFET type mutual resistance Big device, high speed high gain voltage amplifier and active power filtering voltage driver offer ± 6V voltages.
3. a kind of high-gain Simulation scale-up device suitable for strong nuclear radiation environment according to claim 1, its feature exists In：Model AD8066 of the described fast amplifier of JFET type mutual resistance.
CN201611063333.4A 2016-11-28 2016-11-28 High gain analog amplification device suitable for strong nuclear radiation environment Pending CN106646576A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107490757A (en) * 2017-08-30 2017-12-19 北京航天长征飞行器研究所 A kind of microwave amplifier irradiation effect on-line testing method and system
CN108054915A (en) * 2017-12-19 2018-05-18 北京卫星制造厂 A kind of voltage stabilizing power supplying circuit of Width funtion output
CN110596487A (en) * 2019-09-03 2019-12-20 中国运载火箭技术研究院 Microwave module neutron irradiation effect testing arrangement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005214869A (en) * 2004-01-30 2005-08-11 Toshiba Corp Equivalent dose type radiation detector
US20060049345A1 (en) * 2004-09-09 2006-03-09 Halliburton Energy Services, Inc. Radiation monitoring apparatus, systems, and methods
JP2006245169A (en) * 2005-03-02 2006-09-14 Fuji Photo Film Co Ltd Radiation image detector and radiation image signal detector
CN104635255A (en) * 2015-03-16 2015-05-20 中国科学院高能物理研究所 Scintillator neutron detector system and digital reading system thereof
CN105991095A (en) * 2016-01-06 2016-10-05 中国科学院等离子体物理研究所 High-sensitivity anti-radiation preamplifier arranged at far front end

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005214869A (en) * 2004-01-30 2005-08-11 Toshiba Corp Equivalent dose type radiation detector
US20060049345A1 (en) * 2004-09-09 2006-03-09 Halliburton Energy Services, Inc. Radiation monitoring apparatus, systems, and methods
JP2006245169A (en) * 2005-03-02 2006-09-14 Fuji Photo Film Co Ltd Radiation image detector and radiation image signal detector
CN104635255A (en) * 2015-03-16 2015-05-20 中国科学院高能物理研究所 Scintillator neutron detector system and digital reading system thereof
CN105991095A (en) * 2016-01-06 2016-10-05 中国科学院等离子体物理研究所 High-sensitivity anti-radiation preamplifier arranged at far front end

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107490757A (en) * 2017-08-30 2017-12-19 北京航天长征飞行器研究所 A kind of microwave amplifier irradiation effect on-line testing method and system
CN107490757B (en) * 2017-08-30 2020-07-14 北京航天长征飞行器研究所 Microwave amplifier irradiation effect on-line test method and system
CN108054915A (en) * 2017-12-19 2018-05-18 北京卫星制造厂 A kind of voltage stabilizing power supplying circuit of Width funtion output
CN110596487A (en) * 2019-09-03 2019-12-20 中国运载火箭技术研究院 Microwave module neutron irradiation effect testing arrangement

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