CN106633862B - A kind of preparation method of lightning protection semiconductor material - Google Patents
A kind of preparation method of lightning protection semiconductor material Download PDFInfo
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- CN106633862B CN106633862B CN201610870336.2A CN201610870336A CN106633862B CN 106633862 B CN106633862 B CN 106633862B CN 201610870336 A CN201610870336 A CN 201610870336A CN 106633862 B CN106633862 B CN 106633862B
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/02—Ingredients treated with inorganic substances
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
- C08K5/50—Phosphorus bound to carbon only
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5435—Silicon-containing compounds containing oxygen containing oxygen in a ring
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/22—Expanded, porous or hollow particles
- C08K7/24—Expanded, porous or hollow particles inorganic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/17—Protection against damage caused by external factors, e.g. sheaths or armouring
- H01B7/28—Protection against damage caused by moisture, corrosion, chemical attack or weather
- H01B7/2813—Protection against damage caused by electrical, chemical or water tree deterioration
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/202—Applications use in electrical or conductive gadgets use in electrical wires or wirecoating
Abstract
The invention discloses a kind of preparation methods of lightning protection semiconductor material, belong to lightning protection technical field of semiconductor.The present invention takes the crystalline flake graphite powder after ball milling, it is added in the reaction solution of potassium bichromate and sulfuric acid, reactant is obtained to be impregnated with sodium nitrate, calcined material is calcined to obtain after immersion, with the mixing of ferric sulfate and iron chloride, ferroso-ferric oxide is generated after adding alkali to react, crystallization after ultrasonic disperse, obtain modified expanded graphite, with the mixings such as polyaniline, it is granulated up to lightning protection semiconductor material, the present invention is using crystalline flake graphite powder as raw material, to the modified back loading nano ferriferrous oxide in its surface, conduction can be reached, lubrication, the excellent performance such as plastic, the charge for accumulating semiconductor material surface remotely at the uniform velocity migrates, compensate for conventional semiconductor material surface local current and the unbalanced defect of ionic current, it is proved through example, the caking property of resulting lightning protection semiconductor material and composite material is preferable, lightning protection effect is good, with wide economic prospect.
Description
Technical field
The invention discloses a kind of preparation methods of lightning protection semiconductor material, belong to lightning protection technical field of semiconductor.
Background technique
Nature has millions of secondary lightnings every year, and Lightning Disaster is the most serious that " the United Nations's International Decade for Disaster Reduction " is announced
One of ten kinds of natural calamities.Updated statistics shows that loss caused by thunder and lightning has increased to the third position of natural calamity.
The whole world is every year because lightning stroke causes casualties, property loss is countless.Semiconductor be the mankind's contemporary industry development in can not or
Scarce material says that semiconductor refers to material of the electric conductivity between conductor and insulator under room temperature on ordinary meaning.Partly lead
Body has a wide range of applications on radio, television set and thermometric.Semiconductor material can be divided by chemical composition, then by structure
Special amorphous state and liquid semiconductor are individually classified as one kind compared with performance.It can be by semiconductor material according to such classification method
It is divided into elemental semiconductor, inorganic compound semiconductor, organic compound semiconductor and amorphous state and liquid semiconductor.Semiconductive shield
The lightning protection effect of layer mainly has two aspects, first is that making the lightning current of thunderbolt point uniformly flow into cable sheath when lightning stroke the earth, avoiding
High electrical breakdown between thunderbolt point and protective metal shell.Second is that the lightning current into cable sheath is made to be diverted into ground, with reduce cable core with
Inductive voltage value between protective metal shell.Therefore, semiconducting protection layer conduction pulses electric current effect is the main indicator of lightning protection properties, and
The major parameter for influencing pulse current is the volume resistivity and pulse current intensity of semiconducting protection layer.Therefore require cable sheath body
Product resistivity is small as far as possible, and pulse current intensity is big as far as possible.It is accounted for lightning parameter, environmental condition, use condition simultaneously
Influence.Experiment shows that these factors are mainly the multiple bending etc. in repetition pulse electric discharge, temperature, immersion and use process.
But that there are lightning protection effects is bad for conventional semiconductor material, the poor connectivity of semiconductor lightning protection material and composite material and anti-
Thunder efficiency is bad, and semiconductor material surface is constantly present local electronic electric current and ionic current is unequal, causes semiconductor material
Surface forms charge accumulation, the defect for causing performance degradation even to fail.
Summary of the invention
Present invention mainly solves the technical issues of: not for current conventional semiconductor material and the connectivity of composite material
Good, there are local current and ionic currents etc. on surface, cause semiconductor material surface to form charge accumulation, lightning protection efficiency is not
Good defect, the present invention take the crystalline flake graphite powder after ball milling, are added in the reaction solution of potassium bichromate and sulfuric acid, obtain reactant use
Sodium nitrate impregnates, and calcined material is calcined to obtain after immersion, the mixing with ferric sulfate and iron chloride, and four oxidations three are generated after adding alkali to react
Iron, crystallization after ultrasonic disperse, obtains modified expanded graphite, with the mixings such as polyaniline, be granulated up to lightning protection semiconductor material, the present invention
Using crystalline flake graphite powder as raw material, to the modified back loading nano ferriferrous oxide in its surface, conductive, lubrication can be reached, can
The excellent performances such as modeling, the charge for accumulating semiconductor material surface remotely at the uniform velocity migrate, and compensate for conventional semiconductors material
Expect surface local current and the unbalanced defect of ionic current, is proved through example, resulting lightning protection semiconductor material and composite wood
The caking property of material is preferable, and lightning protection effect is good, has wide economic prospect.
In order to solve the above-mentioned technical problem, the technical scheme adopted by the invention is that:
(1) 5~10g crystalline flake graphite is weighed, ball milling in ball mill is put into, 60~70 meshes is crossed, obtains crystalline flake graphite powder, is claimed
3~5g potassium bichromate is taken to be added in 100~150mL mass fraction, 98% sulfuric acid solution, lysate is dissolved to obtain in stirring to solid,
Crystalline flake graphite powder is added in lysate, 1~2h is stood after being stirred 40~50min, filters to obtain filter residue after standing；
(2) above-mentioned filter residue 1:6 in mass ratio is added in 30% sodium nitrate solution of mass fraction, impregnates centrifugation point after 1~2h
It from sediment is obtained, is put into baking oven after being washed with deionized to neutrality, dry 3~5h must be dry at a temperature of 80~100 DEG C
Object is put into the Muffle furnace for being preheated to 800~900 DEG C of temperature, and heat preservation 2~4min of calcining obtains calcined material；
(3) 150~160g ferric sulfate is weighed respectively and 15~20g iron chloride is added in 600~700mL deionized water,
Stirring to solid dissolves, and is that 1mol/L sodium hydroxide adjusts pH most 11 with concentration, the above-mentioned calcined material of 3~4g is added after adjusting,
It is put into water-bath, is stirred 30~50min under 40~50 DEG C and 300~500r/min revolving speed, is with concentration after stirring
1mol/L sodium hydroxide adjusts pH most 12.5,5~10min of ultrasonic disperse after adjusting；
(4) mixed liquor after above-mentioned dispersion is kept the temperature to 3~5h of crystallization under the conditions of 40~50 DEG C, filters, must filter after crystallization
Slag is put into baking oven after being washed with deionized 3~5 times, and dry 8~10h, is milled to grain after dry at a temperature of 60~80 DEG C
Diameter is 0.5~0.7 μm, obtains modified expanded graphite；
(5) according to parts by weight, 70~80 parts of polyanilines, 5~10 parts of above-mentioned modified expanded graphites, 1~3 part are chosen respectively
Batch mixer mixing, mixing 20 is added in silane coupling agent KH-560,0.5~0.7 part of bi triphenyl phosphorus palladium chloride after being stirred
It is added twin-screw extrude after~30min, in extrusion temperature be 160~180 DEG C and die head temperature is 190~200 DEG C of conditions
Lower extruding pelletization, can be obtained lightning protection semiconductor material.
Application method of the invention is: being by outer diameter is extruded in lightning protection semiconductor material produced by the present invention addition extruding machine
41~43mm, the lightning protected cable sheath with a thickness of 1~3mm control extruding machine temperature of each section are as follows: and 140~160 DEG C of feed opening, machine
180~200 DEG C of body, head be 170~190 DEG C, die temperature be 180~190 DEG C, extruded velocity be 10~12m/min to get
Lightning protected cable sheath is coated on cable surface at 200~250 DEG C, is cooled to room temperature, gained lightning protection semiconductor material
Expect cable cover(ing) elongation at break be 400~500%, volume resistivity be 200~250 cm, resistance to thunder level be 150~
160kA。
The beneficial effects of the present invention are:
(1) present invention resulting lightning protection semiconductor material unload performance and lightning protection properties with higher, resulting lightning protection
Sheath has a longer life expectancy；
(2) compatibility between resulting materials and composite material is good, and material homogenizing is uniformly dispersed, has good lightning protection
Effect is suitble to large-scale production and application.
Specific embodiment
5~10g crystalline flake graphite is weighed, ball milling in ball mill is put into, 60~70 meshes is crossed, obtains crystalline flake graphite powder, weigh 3
~5g potassium bichromate is added in 100~150mL mass fraction, 98% sulfuric acid solution, and lysate is dissolved to obtain in stirring to solid, by squama
Piece powdered graphite is added in lysate, is stood 1~2h after being stirred 40~50min, is filtered to obtain filter residue after standing；It will be above-mentioned
Filter residue 1:6 in mass ratio be added 30% sodium nitrate solution of mass fraction in, impregnate 1~2h after be centrifugated to obtain sediment, spend from
It being put into baking oven after sub- water washing to neutrality, dry 3~5h obtains dried object at a temperature of 80~100 DEG C, be put into and be preheated to 800~
In the Muffle furnace of 900 DEG C of temperature, heat preservation 2~4min of calcining obtains calcined material；150~160g ferric sulfate and 15~20g are weighed respectively
Iron chloride is added in 600~700mL deionized water, and stirring to solid is dissolved, and is that 1mol/L sodium hydroxide adjusts pH with concentration
Most 11, the above-mentioned calcined material of 3~4g is added after adjusting, is put into water-bath, under 40~50 DEG C and 300~500r/min revolving speed
Be stirred 30~50min, after stirring with concentration be 1mol/L sodium hydroxide adjust pH most 12.5, ultrasonic disperse 5 after adjusting
~10min；Mixed liquor after above-mentioned dispersion is kept the temperature into 3~5h of crystallization under the conditions of 40~50 DEG C, is filtered after crystallization, obtains filter residue,
It is put into baking oven after being washed with deionized 3~5 times, dry 8~10h, is milled to partial size after dry at a temperature of 60~80 DEG C
It is 0.5~0.7 μm, obtains modified expanded graphite；According to parts by weight, choose respectively 70~80 parts of polyanilines, 5~10 parts above-mentioned change
Property expanded graphite, 1~3 part of silane coupling agent KH-560,0.5~0.7 part of bi triphenyl phosphorus palladium chloride, are added after being stirred
Batch mixer mixing, adds twin-screw extrude after mixing 20~30min, is 160~180 DEG C and die head temperature in extrusion temperature
Extruding pelletization under the conditions of being 190~200 DEG C, can be obtained lightning protection semiconductor material.
Example 1
5g crystalline flake graphite is weighed, ball milling in ball mill is put into, 60 meshes is crossed, obtains crystalline flake graphite powder, weigh 3g dichromic acid
Potassium is added in 98% sulfuric acid solution of 100mL mass fraction, and stirring dissolves to obtain lysate to solid, and crystalline flake graphite powder is added
Into lysate, 1h is stood after being stirred 40min, filter residue is filtered to obtain after standing；Matter is added in above-mentioned filter residue 1:6 in mass ratio
It measures in 30% sodium nitrate solution of score, is centrifugated to obtain sediment after impregnating 1h, is put into baking oven after being washed with deionized to neutrality
In, dry 3h obtains dried object at a temperature of 80 DEG C, is put into the Muffle furnace for being preheated to 800 DEG C of temperature, and heat preservation calcining 2min must be forged
Burn object；150g ferric sulfate is weighed respectively and 15g iron chloride is added in 600mL deionized water, and stirring to solid is dissolved, and concentration is used
Adjust pH most 11 for 1mol/L sodium hydroxide, the above-mentioned calcined material of 3g be added after adjusting, is put into water-bath, at 40 DEG C and
30min is stirred under 300r/min revolving speed, after stirring with concentration be 1mol/L sodium hydroxide adjust pH most 12.5, after adjusting
Ultrasonic disperse 5min；Mixed liquor after above-mentioned dispersion is kept the temperature into crystallization 3h under the conditions of 40 DEG C, is filtered after crystallization, obtains filter residue, is used
Deionized water is put into baking oven after washing 3 times, and dry 8h at a temperature of 60 DEG C, it is 0.5 μm that partial size is milled to after dry, obtains modification
Expanded graphite；According to parts by weight, 70 parts of polyanilines, 5 parts of above-mentioned modified expanded graphites, 1 part of silane coupling agent KH- are chosen respectively
560, batch mixer mixing is added in 0.5 part of bi triphenyl phosphorus palladium chloride after being stirred, addition twin-screw squeezes after mixing 20min
Out in machine, lightning protection semiconductor material is can be obtained in extruding pelletization under the conditions of extrusion temperature is 160 DEG C and die head temperature is 190 DEG C
Material.
Application method of the invention is: being by outer diameter is extruded in lightning protection semiconductor material produced by the present invention addition extruding machine
41mm, the lightning protected cable sheath with a thickness of 1mm control extruding machine temperature of each section are as follows: and 140 DEG C of feed opening, 180 DEG C of fuselage, head
It is 170 DEG C, die temperature is 180 DEG C, and extruded velocity is 10m/min to get lightning protected cable sheath, is coated at 200 DEG C
It in cable surface, is cooled to room temperature, gained lightning protection semiconductor material cable cover(ing) elongation at break is 400%, volume resistance
Rate is 200 cm, and resistance to thunder level is 150kA.
Example 2
10g crystalline flake graphite is weighed, ball milling in ball mill is put into, 70 meshes is crossed, obtains crystalline flake graphite powder, weigh 5g dichromic acid
Potassium is added in 98% sulfuric acid solution of 150mL mass fraction, and stirring dissolves to obtain lysate to solid, and crystalline flake graphite powder is added
Into lysate, 2h is stood after being stirred 50min, filter residue is filtered to obtain after standing；Matter is added in above-mentioned filter residue 1:6 in mass ratio
It measures in 30% sodium nitrate solution of score, is centrifugated to obtain sediment after impregnating 2h, is put into baking oven after being washed with deionized to neutrality
In, dry 5h obtains dried object at a temperature of 100 DEG C, is put into the Muffle furnace for being preheated to 900 DEG C of temperature, and heat preservation calcining 4min is obtained
Calcined material；160g ferric sulfate is weighed respectively and 20g iron chloride is added in 700mL deionized water, and stirring to solid is dissolved, and use is dense
Degree is that 1mol/L sodium hydroxide adjusts pH most 11, and the above-mentioned calcined material of 4g is added after adjusting, is put into water-bath, at 50 DEG C and
50min is stirred under 500r/min revolving speed, after stirring with concentration be 1mol/L sodium hydroxide adjust pH most 12.5, after adjusting
Ultrasonic disperse 10min；Mixed liquor after above-mentioned dispersion is kept the temperature into crystallization 5h under the conditions of 50 DEG C, is filtered after crystallization, obtains filter residue, is used
Deionized water is put into baking oven after washing 5 times, and dry 10h at a temperature of 80 DEG C, it is 0.7 μm that partial size is milled to after dry, must be changed
Property expanded graphite；According to parts by weight, 80 parts of polyanilines, 10 parts of above-mentioned modified expanded graphites, 3 parts of silane coupling agents are chosen respectively
KH-560,0.7 part of bi triphenyl phosphorus palladium chloride are added batch mixer mixing, twin-screw are added after mixing 30min after being stirred
In extruder, lightning protection semiconductor is can be obtained in extruding pelletization under the conditions of extrusion temperature is 180 DEG C and die head temperature is 200 DEG C
Material.
Application method of the invention is: being by outer diameter is extruded in lightning protection semiconductor material produced by the present invention addition extruding machine
43mm, the lightning protected cable sheath with a thickness of 3mm control extruding machine temperature of each section are as follows: and 160 DEG C of feed opening, 200 DEG C of fuselage, head
It is 190 DEG C, die temperature is 190 DEG C, and extruded velocity is 12m/min to get lightning protected cable sheath, is coated at 250 DEG C
It in cable surface, is cooled to room temperature, gained lightning protection semiconductor material cable cover(ing) elongation at break is 500%, volume resistance
Rate is 250 cm, and resistance to thunder level is 160kA.
Example 3
7g crystalline flake graphite is weighed, ball milling in ball mill is put into, 65 meshes is crossed, obtains crystalline flake graphite powder, weigh 4g dichromic acid
Potassium is added in 98% sulfuric acid solution of 130mL mass fraction, and stirring dissolves to obtain lysate to solid, and crystalline flake graphite powder is added
Into lysate, 1.5h is stood after being stirred 45min, filter residue is filtered to obtain after standing；Above-mentioned filter residue 1:6 in mass ratio is added
In 30% sodium nitrate solution of mass fraction, it is centrifugated to obtain sediment after impregnating 1.5h, is put into after being washed with deionized to neutrality
In baking oven, dry 4h obtains dried object at a temperature of 90 DEG C, is put into the Muffle furnace for being preheated to 850 DEG C of temperature, heat preservation calcining 3min,
Obtain calcined material；155g ferric sulfate is weighed respectively and 17g iron chloride is added in 650mL deionized water, and stirring to solid is dissolved, and is used
Concentration is that 1mol/L sodium hydroxide adjusts pH most 11, and the above-mentioned calcined material of 3.5g is added after adjusting, is put into water-bath, at 45 DEG C
With 40min is stirred under 400r/min revolving speed, after stirring with concentration be 1mol/L sodium hydroxide adjust pH most 12.5, adjust
Ultrasonic disperse 7min afterwards；Mixed liquor after above-mentioned dispersion is kept the temperature into crystallization 4h under the conditions of 45 DEG C, is filtered after crystallization, obtains filter residue,
It is put into baking oven after being washed with deionized 4 times, dry 9h at a temperature of 70 DEG C, it is 0.6 μm that partial size is milled to after dry, must be changed
Property expanded graphite；According to parts by weight, 75 parts of polyanilines, 7 parts of above-mentioned modified expanded graphites, 2 parts of silane coupling agents are chosen respectively
KH-560,0.6 part of bi triphenyl phosphorus palladium chloride are added batch mixer mixing, twin-screw are added after mixing 25min after being stirred
In extruder, lightning protection semiconductor is can be obtained in extruding pelletization under the conditions of extrusion temperature is 170 DEG C and die head temperature is 195 DEG C
Material.
Application method of the invention is: being by outer diameter is extruded in lightning protection semiconductor material produced by the present invention addition extruding machine
42mm, the lightning protected cable sheath with a thickness of 2mm control extruding machine temperature of each section are as follows: and 150 DEG C of feed opening, 190 DEG C of fuselage, head
It is 180 DEG C, die temperature is 185 DEG C, and extruded velocity is 11m/min to get lightning protected cable sheath, is coated at 230 DEG C
It in cable surface, is cooled to room temperature, gained lightning protection semiconductor material cable cover(ing) elongation at break is 450%, volume resistance
Rate is 230 cm, and resistance to thunder level is 155kA.
Claims (1)
1. a kind of preparation method of lightning protection semiconductor material, it is characterised in that specific preparation step are as follows:
(1) 5~10g crystalline flake graphite is weighed, ball milling in ball mill is put into, 60~70 meshes is crossed, obtains crystalline flake graphite powder, weigh 3
~5g potassium bichromate is added in 100~150mL mass fraction, 98% sulfuric acid solution, and lysate is dissolved to obtain in stirring to solid, by squama
Piece powdered graphite is added in lysate, is stood 1~2h after being stirred 40~50min, is filtered to obtain filter residue after standing；
(2) above-mentioned filter residue 1:6 in mass ratio is added in 30% sodium nitrate solution of mass fraction, is centrifugated after impregnating 1~2h
Sediment is put into baking oven after being washed with deionized to neutrality, and dry 3~5h obtains dried object at a temperature of 80~100 DEG C, is put
Enter and be preheated in the Muffle furnace of 800~900 DEG C of temperature, heat preservation 2~4min of calcining obtains calcined material；
(3) 150~160g ferric sulfate is weighed respectively and 15~20g iron chloride is added in 600~700mL deionized water, is stirred
To solid dissolve, with concentration be 1mol/L sodium hydroxide adjust pH value be 11, after adjusting be added the above-mentioned calcined material of 3~4g, be put into
In water-bath, it is stirred 30~50min under 40~50 DEG C and 300~500r/min revolving speed, with concentration is 1mol/ after stirring
It is 12.5 that L sodium hydroxide, which adjusts pH value, 5~10min of ultrasonic disperse after adjusting；
(4) mixed liquor after above-mentioned dispersion is kept the temperature to 3~5h of crystallization under the conditions of 40~50 DEG C, is filtered after crystallization, obtains filter residue, is used
Deionized water is put into baking oven after washing 3~5 times, and dry 8~10h at a temperature of 60~80 DEG C, being milled to partial size after dry is
0.5~0.7 μm, obtain modified expanded graphite；
(5) according to parts by weight, 70~80 parts of polyanilines, 5~10 parts of above-mentioned modified expanded graphites, 1~3 part of silane are chosen respectively
Coupling agent KH-560,0.5~0.7 part of bi triphenyl phosphorus palladium chloride are added batch mixer and mix after being stirred, and mixing 20~
It is added twin-screw extrude after 30min, under the conditions of extrusion temperature is 160~180 DEG C and die head temperature is 190~200 DEG C
Lightning protection semiconductor material can be obtained in extruding pelletization.
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| CN112250064A (en) * | 2020-09-28 | 2021-01-22 | 平顶山市博翔碳素有限公司 | Preparation method of semiconductor graphite |
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| CN102403577A (en) * | 2010-09-13 | 2012-04-04 | 刘建华 | Method for preventing rust and reducing grounding resistivity for lightning protection grounding body |
| CN104376921A (en) * | 2014-11-10 | 2015-02-25 | 河南盛煌电力设备有限公司 | Graphite composite resistance-reduction cloth production process |
| CN105741947A (en) * | 2016-03-31 | 2016-07-06 | 安徽富悦达电子有限公司 | Antibacterial and high-flame-retardant cable |
| CN105885780A (en) * | 2015-01-12 | 2016-08-24 | 冯云 | Preparation method of nano-composite mesoporous material |
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|---|---|---|---|---|
| CN101578329A (en) * | 2006-12-20 | 2009-11-11 | 陶氏环球技术公司 | Semi-conducting polymer compositions for the preparation of wire and cable |
| CN102403577A (en) * | 2010-09-13 | 2012-04-04 | 刘建华 | Method for preventing rust and reducing grounding resistivity for lightning protection grounding body |
| CN104376921A (en) * | 2014-11-10 | 2015-02-25 | 河南盛煌电力设备有限公司 | Graphite composite resistance-reduction cloth production process |
| CN105885780A (en) * | 2015-01-12 | 2016-08-24 | 冯云 | Preparation method of nano-composite mesoporous material |
| CN105741947A (en) * | 2016-03-31 | 2016-07-06 | 安徽富悦达电子有限公司 | Antibacterial and high-flame-retardant cable |
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