CN106602866A - Charge pump - Google Patents

Charge pump Download PDF

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Publication number
CN106602866A
CN106602866A CN201611265932.4A CN201611265932A CN106602866A CN 106602866 A CN106602866 A CN 106602866A CN 201611265932 A CN201611265932 A CN 201611265932A CN 106602866 A CN106602866 A CN 106602866A
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CN
China
Prior art keywords
triode
series
source
electric capacity
drain
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Granted
Application number
CN201611265932.4A
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Chinese (zh)
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CN106602866B (en
Inventor
唐立伟
任军
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Hengshuo semiconductor (Hefei) Co.,Ltd.
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Hefei Hengshuo Semiconductor Co Ltd
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Priority to CN201611265932.4A priority Critical patent/CN106602866B/en
Publication of CN106602866A publication Critical patent/CN106602866A/en
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Publication of CN106602866B publication Critical patent/CN106602866B/en
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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073Charge pumps of the Schenkel-type

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a charge pump, which comprises a backward amplifier, a first triode, a second triode, a third triode, a fourth triode, a fifth triode, a sixth triode, a seventh triode and the like, wherein a source of the first triode is connected in series with a source of the second triode, a drain of the first triode is connected in series with a first capacitor, the first capacitor is connected in series with a gate of the second triode, a drain of the second triode is connected in series with a source of the fifth triode, a gate of the fifth triode is connected in series with a source of the fourth triode, the source of the fourth triode is connected in series with a drain of the third triode, a source of the third triode is connected with a grounding end, a gate of the third triode is connected in series with a gate of the fourth triode, and the like. The charge pump can solve the problems of voltage threshold loss and low conversion rate, reduce the load connected to the circuit nodes in a main circuit, so as to realize the shortening of the circuit stabilization time, realize the reduction of circuit cost, apply the circuit to voltage boosting, and reduce the unnecessary consumption.

Description

Charge pump
Technical field
The present invention relates to a kind of pump, more particularly to a kind of charge pump.
Background technology
Prior art realizes that the circuit of charge pump has various, but the following defect of different degrees of presence:First, booster tension Process has the loss of threshold voltage vt, conversion efficiency low;2nd, output voltage takes long enough to stablize;3rd, control logic Circuit is complicated, required control clock phase is more;4th, required circuit cost is high.Due to the transistor size that available circuit is used It is more, cause the silicon area shared by it larger.
The content of the invention
The technical problem to be solved is to provide a kind of charge pump, and it can solve the problem that voltage threshold loses and changes The low problem of rate, cuts down the load that circuit node is connected in main circuit, so as to realize the reduction of circuit settling times, realizes The reduction of circuit cost, circuit the lifting of voltage is used for, and reduces unnecessary consumption.
The present invention is to solve above-mentioned technical problem by following technical proposals:A kind of charge pump, it includes swinging to puts Big device, the first triode, the second triode, the 3rd triode, the 4th triode, the 5th triode, the 6th triode, the seven or three Pole pipe, the 8th triode, the 9th triode, the tenth triode, the 11st triode, the 12nd triode, the 13rd triode, 14th triode, the 15th triode, the 16th triode, the 17th triode, the 18th triode, the 19th pole Pipe, the 20th triode, the 21st triode, the 22nd triode, the 23rd triode, the 24th triode, 25th triode, the 26th triode, the first electric capacity, the second electric capacity, the 3rd electric capacity, the 4th electric capacity, the 5th electric capacity, Six electric capacity, the 7th electric capacity, the 8th electric capacity, the 9th electric capacity, the first triode source electrode and the second triode source series, the one or three pole Pipe drains and the first capacitances in series, the first electric capacity and the second triode gate series, and the second triode drains and the 5th triode Source series, the 5th triode grid and the 4th triode source series, the 4th triode source electrode and the 3rd triode drain electrode string Connection, the 3rd triode source electrode is connected with an earth terminal, the 3rd triode grid and the 4th triode gate series, the four or three pole Pipe drains and the second capacitances in series, and the second electric capacity is connected with the 6th triode source electrode, and the 5th triode drains and the 9th triode Source series, the 9th triode grid and the 8th triode source series, the 8th triode source electrode and the 7th triode drain electrode string Connection, the 7th triode source electrode is connected with earth terminal, the 7th triode grid and the 8th triode gate series, and the 8th triode leaks Pole and the 3rd capacitances in series, the 3rd electric capacity and the tenth triode source series, the drain electrode of the 9th triode and the 13rd triode source Pole series connection, the 13rd triode grid and the 11st triode drain series, the 11st triode source electrode is connected with earth terminal, the 11 triode grids and the 12nd triode gate series, the 12nd triode source electrode and the 11st triode drain series, 12nd triode drains and the 4th capacitances in series, the 4th electric capacity and the 14th triode source series, the leakage of the 13rd triode Pole and the 17th triode source series, the 17th triode grid and the 16th triode source series, the 16th triode Source electrode and the 15th triode drain series, the 15th triode source electrode is connected with earth terminal, the 15th triode grid and 16 triode gate series, the drain electrode of the 16th triode and the 5th capacitances in series, the 5th electric capacity and the 18th triode source electrode Series connection, the 6th electric capacity and the 17th triode source series, the 6th electric capacity and the 19th triode drain series, the 19th pole Pipe source electrode and the 20th triode drain series, the 20th triode source electrode is connected with earth terminal, the 20th triode grid with 19th triode gate series, the drain electrode of the 21st triode and the 13rd triode source series, the 21st triode Drain electrode and the 7th capacitances in series, the 21st triode source electrode and the 22nd triode drain series, the 22nd triode Source electrode is connected with earth terminal, the 22nd triode grid and the 21st triode gate series, the 8th electric capacity and the 9th 3 Pole pipe source series, the 9th triode source electrode and the 23rd triode drain series, the 23rd triode grid and second 14 triode gate series, the 24th triode source electrode is connected with earth terminal, the 24th triode drain electrode and the 20th Three triode source series, the 9th electric capacity and the 5th triode source series, the 9th electric capacity is connected with amplifierinverter, swings to and put Big device and the 26th triode gate series, the 26th triode grid and the 25th triode gate series, second 15 triodes drain and the 9th capacitances in series, the 25th triode source electrode and the 25th triode drain series, and second 15 triode source electrodes are connected with earth terminal.
Preferably, first triode, the second triode, the 3rd triode, the 5th triode, the 6th triode, Seven triodes, the 9th triode, the tenth triode, the 11st triode, the 13rd triode, the 14th triode, the 15th Triode, the 17th triode, the 18th triode, the 20th triode, the 22nd triode, the 24th triode, 26th triode all be NMOS tube, the 4th triode, the 8th triode, the 12nd triode, the 16th triode, the tenth Nine triodes, the 21st triode, the 23rd triode, the 25th triode are all PMOS.
The present invention positive effect be:The present invention can solve the problem that voltage threshold loss and the low problem of conversion ratio, The load that circuit node is connected in abatement main circuit, so as to realize the reduction of circuit settling times, realizes circuit cost Reduce, circuit is used for the lifting of voltage, reduce unnecessary consumption.
Description of the drawings
Fig. 1 is the circuit diagram of the present invention.
Specific embodiment
Present pre-ferred embodiments are given below in conjunction with the accompanying drawings, to describe technical scheme in detail.
As shown in figure 1, charge pump of the present invention include amplifierinverter A1, the first triode Q1, the second triode Q2, the 3rd Triode Q3, the 4th triode Q4, the 5th triode Q5, the 6th triode Q6, the 7th triode Q7, the 8th triode Q8, Nine triode Q9, the tenth triode Q10, the 11st triode Q11, the 12nd triode Q12, the 13rd triode Q13, the tenth Four triode Q14, the 15th triode Q15, the 16th triode Q16, the 17th triode Q17, the 18th triode Q18, 19th triode Q19, the 20th triode Q20, the 21st triode Q21, the 22nd triode Q22, the 23rd Triode Q23, the 24th triode Q24, the 25th triode Q25, the 26th triode Q26, the first electric capacity C1, Two electric capacity C2, the 3rd electric capacity C3, the 4th electric capacity C4, the 5th electric capacity C5, the 6th electric capacity C6, the 7th electric capacity C7, the 8th electric capacity C8, Nine electric capacity C9, the first triode Q1 source electrodes and the second triode Q2 source series, the first triode Q1 drain electrodes and the first electric capacity C1 Series connection, the first electric capacity C1 and the second triode Q2 gate series, the second triode Q2 drain electrodes and the 5th triode Q5 source series, 5th triode Q5 grids and the 4th triode Q4 source series, the 4th triode Q4 source electrodes and the 3rd triode Q3 drain electrode strings Connection, the 3rd triode Q3 source electrodes are connected with an earth terminal, the 3rd triode Q3 grids and the 4th triode Q4 gate series, the Four triode Q4 drain electrodes are connected with the second electric capacity C2, and the second electric capacity C2 is connected with the 6th triode Q6 source electrodes, the 5th triode Q5 Drain electrode and the 9th triode Q9 source series, the 9th triode Q9 grids and the 8th triode Q8 source series, the 8th triode Q8 source electrodes and the 7th triode Q7 drain series, the 7th triode Q7 source electrodes are connected with earth terminal, the 7th triode Q7 grids with 8th triode Q8 gate series, the 8th triode Q8 drain electrodes are connected with the 3rd electric capacity C3, the 3rd electric capacity C3 and the tenth triode Q10 source series, the 9th triode Q9 drain electrodes and the 13rd triode Q13 source series, the 13rd triode Q13 grids and the 11 triode Q11 drain series, the 11st triode Q11 source electrodes are connected with earth terminal, the 11st triode Q11 grids and 12 triode Q12 gate series, the 12nd triode Q12 source electrodes and the 11st triode Q11 drain series, the 12nd pole Pipe Q12 drain electrodes are connected with the 4th electric capacity C4, the 4th electric capacity C4 and the 14th triode Q14 source series, the 13rd triode Q13 Drain electrode and the 17th triode Q17 source series, the 17th triode Q17 grids and the 16th triode Q16 source series, the 16 triode Q16 source electrodes and the 15th triode Q15 drain series, the 15th triode Q15 source electrodes are connected with earth terminal, the 15 triode Q15 grids and the 16th triode Q16 gate series, the 16th triode Q16 drain electrodes and the 5th electric capacity C5 strings Connection, the 5th electric capacity C5 and the 18th triode Q18 source series, the 6th electric capacity C6 and the 17th triode Q17 source series, the Six electric capacity C6 and the 19th triode Q19 drain series, the 19th triode Q19 source electrodes and the 20th triode Q20 drain electrode strings Connection, the 20th triode Q20 source electrodes are connected with earth terminal, the 20th triode Q20 grids and the 19th triode Q19 grid strings Connection, the 21st triode Q21 drain electrodes and the 13rd triode Q13 source series, the 21st triode Q21 drain electrodes and the 7th Electric capacity C7 series connection, the 21st triode Q21 source electrodes and the 22nd triode Q22 drain series, the 22nd triode Q22 Source electrode is connected with earth terminal, the 22nd triode Q22 grids and the 21st triode Q21 gate series, the 8th electric capacity C8 With the 9th triode Q9 source series, the 9th triode Q9 source electrodes and the 23rd triode Q23 drain series, the 23rd Pole pipe Q23 grid and the 24th triode Q24 gate series, the 24th triode Q24 source electrodes are connected with earth terminal, and second 14 triode Q24 drain and the 23rd triode Q23 source series, the 9th electric capacity C9 and the 5th triode Q5 source electrode strings Connection, the 9th electric capacity C9 connects with amplifierinverter A1, amplifierinverter A1 and the 26th triode Q26 gate series, and second 16 triode Q26 grids and the 25th triode Q25 gate series, the 25th triode Q25 drain electrodes and the 9th electric capacity C9 series connection, the 25th triode Q25 source electrodes and the 25th triode Q25 drain series, the 25th triode Q25 source electrodes It is connected with earth terminal.
The first triode Q1, the second triode Q2, the 3rd triode Q3, the 5th triode Q5, the 6th triode Q6, 7th triode Q7, the 9th triode Q9, the tenth triode Q10, the 11st triode Q11, the 13rd triode Q13, the tenth Four triode Q14, the 15th triode Q15, the 17th triode Q17, the 18th triode Q18, the 20th triode Q20, 22nd triode Q22, the 24th triode Q24, the 26th triode Q26 are NMOS tube, the 4th triode Q4, 8th triode Q8, the 12nd triode Q12, the 16th triode Q16, the 19th triode Q19, the 21st triode Q21, the 23rd triode Q23, the 25th triode Q25 are PMOS.
Input voltage is Vi, and output voltage is Vo.Clock signal CK_b is the inversion signal of clock signal CK, it is only necessary to CK signal phase inverters do one it is anti-phase just can be with, it is not necessary to processed with complicated circuit.If initial voltage is VDD, when CK is from 0 When volt jumps to VDD;Node J1 also can jump to 2VDD from VDD, and node Z1 can be from 0 saltus step into 2VDD.When CK is jumped to from VDD When 0, node J1 jumps to VDD from 2VDD, and node Z1 jumps to 0 from 2VDD.The lower section of follow-up per grade node Jn main circuits is all Coupled with CK (or CK_b) by an electric capacity, the effect of this electric capacity is also to realize the width Jn voltages one VDD of lifting Degree.It can be seen that the voltage for finding out node Yn (n is natural number) is to addition of one on the basis of correspondence Zn (n is natural number) The amplitude of individual input voltage Vi, V (Yn)=V (Zn)+Vi.The voltage and the clock phase of CK of point CGn (when n is even number) is same Phase;The voltage and the clock phase of CK_b of node CGn (when n is odd number) is homophase.Due to V (CGn)=V (Zn)+Vi, when When it is high voltage, the voltage of Jn (n is natural number) will pass to J (n+1) without threshold value loss;Now due to CK (or CK_b effect), the corresponding voltages of J (n+1) can be namely between the Capacitance Coupled one between J (n+1) and CK (or CK_b) VDD, that is, realize the lifting of node J (n+1) voltage magnitude.And so on, the voltage of node J (n+1) always compares previous stage The high VDD of node Jn amplitude.Last output Vo can be in the presence of output load capacitance the section of one-level above The voltage of point Jn is steady to filtering, is relatively stable amplitude V (Jn), which achieves the purpose that voltage is raised step by step, finally Realize the function of charge pump.
Particular embodiments described above, the technical problem, technical scheme and beneficial effect to the solution of the present invention is carried out Further describe, should be understood that the specific embodiment that the foregoing is only of the invention, be not limited to The present invention, all any modification, equivalent substitution and improvements within the spirit and principles in the present invention, done etc., should be included in this Within the protection domain of invention.

Claims (2)

1. a kind of charge pump, it is characterised in that it includes amplifierinverter, the first triode, the second triode, the three or three pole Pipe, the 4th triode, the 5th triode, the 6th triode, the 7th triode, the 8th triode, the 9th triode, the 13rd pole Pipe, the 11st triode, the 12nd triode, the 13rd triode, the 14th triode, the 15th triode, the 16th Pole pipe, the 17th triode, the 18th triode, the 19th triode, the 20th triode, the 21st triode, second It is 12 triodes, the 23rd triode, the 24th triode, the 25th triode, the 26th triode, first electric Appearance, the second electric capacity, the 3rd electric capacity, the 4th electric capacity, the 5th electric capacity, the 6th electric capacity, the 7th electric capacity, the 8th electric capacity, the 9th electric capacity, the One triode source electrode and the second triode source series, the drain electrode of the first triode and the first capacitances in series, the first electric capacity and second Triode gate series, the drain electrode of the second triode and the 5th triode source series, the 5th triode grid and the 4th triode Source series, the 4th triode source electrode and the 3rd triode drain series, the 3rd triode source electrode is connected with an earth terminal, the Three triode grids and the 4th triode gate series, the drain electrode of the 4th triode and the second capacitances in series, the second electric capacity and the 6th Triode source electrode is connected, and the 5th triode drains and the 9th triode source series, the 9th triode grid and the 8th triode Source series, the 8th triode source electrode and the 7th triode drain series, the 7th triode source electrode is connected with earth terminal, and the seven or three Pole pipe grid and the 8th triode gate series, the drain electrode of the 8th triode and the 3rd capacitances in series, the 3rd electric capacity and the 13rd pole Pipe source series, the drain electrode of the 9th triode and the 13rd triode source series, the 13rd triode grid and the 11st pole Pipe drain series, the 11st triode source electrode is connected with earth terminal, the 11st triode grid and the 12nd triode grid string Connection, the 12nd triode source electrode and the 11st triode drain series, the drain electrode of the 12nd triode and the 4th capacitances in series, the 4th Electric capacity and the 14th triode source series, the drain electrode of the 13rd triode and the 17th triode source series, the 17th pole Tube grid and the 16th triode source series, the 16th triode source electrode and the 15th triode drain series, the 15th Pole pipe source electrode is connected with earth terminal, the 15th triode grid and the 16th triode gate series, the drain electrode of the 16th triode With the 5th capacitances in series, the 5th electric capacity and the 18th triode source series, the 6th electric capacity and the 17th triode source series, 6th electric capacity and the 19th triode drain series, the 19th triode source electrode and the 20th triode drain series, the 20th Triode source electrode is connected with earth terminal, the 20th triode grid and the 19th triode gate series, the 21st triode Drain electrode and the 13rd triode source series, the drain electrode of the 21st triode and the 7th capacitances in series, the 21st triode source Pole and the 22nd triode drain series, the 22nd triode source electrode is connected with earth terminal, the 22nd triode grid With the 21st triode gate series, the 8th electric capacity and the 9th triode source series, the 9th triode source electrode and the 20th Three triode drain series, the 23rd triode grid and the 24th triode gate series, the 24th triode source Pole is connected with earth terminal, and the 24th triode drains and the 23rd triode source series, the 9th electric capacity and the five or three pole Pipe source series, the 9th electric capacity is connected with amplifierinverter, amplifierinverter and the 26th triode gate series, and the 20th Six triode grids and the 25th triode gate series, the drain electrode of the 25th triode and the 9th capacitances in series, the 20th Five triode source electrodes and the 25th triode drain series, the 25th triode source electrode is connected with earth terminal.
2. charge pump as claimed in claim 1, it is characterised in that first triode, the second triode, the three or three pole Pipe, the 5th triode, the 6th triode, the 7th triode, the 9th triode, the tenth triode, the 11st triode, the 13rd Triode, the 14th triode, the 15th triode, the 17th triode, the 18th triode, the 20th triode, second 12 triodes, the 24th triode, the 26th triode all be NMOS tube, the 4th triode, the 8th triode, the tenth Two triodes, the 16th triode, the 19th triode, the 21st triode, the 23rd triode, the 25th pole Guan Douwei PMOSs.
CN201611265932.4A 2016-12-30 2016-12-30 Charge pump Active CN106602866B (en)

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CN106602866B CN106602866B (en) 2019-05-21

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106602866B (en) * 2016-12-30 2019-05-21 合肥恒烁半导体有限公司 Charge pump
CN113824197A (en) * 2021-11-19 2021-12-21 广东希荻微电子股份有限公司 Voltage conversion circuit and charger

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080079480A1 (en) * 2006-10-02 2008-04-03 Fumiyasu Utsunomiya Electronic device including boosting circuit
CN102480224A (en) * 2010-11-25 2012-05-30 上海天马微电子有限公司 Charge pump circuit
CN102751867A (en) * 2012-07-10 2012-10-24 北京大学 PMOS (P-channel Metal Oxide Semiconductor) positive high-voltage charge pump

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106602866B (en) * 2016-12-30 2019-05-21 合肥恒烁半导体有限公司 Charge pump

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080079480A1 (en) * 2006-10-02 2008-04-03 Fumiyasu Utsunomiya Electronic device including boosting circuit
CN102480224A (en) * 2010-11-25 2012-05-30 上海天马微电子有限公司 Charge pump circuit
CN102751867A (en) * 2012-07-10 2012-10-24 北京大学 PMOS (P-channel Metal Oxide Semiconductor) positive high-voltage charge pump

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106602866B (en) * 2016-12-30 2019-05-21 合肥恒烁半导体有限公司 Charge pump
CN113824197A (en) * 2021-11-19 2021-12-21 广东希荻微电子股份有限公司 Voltage conversion circuit and charger

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Inventor after: Lv Xiangdong

Inventor after: Tang Liwei

Inventor after: Ren Jun

Inventor before: Tang Liwei

Inventor before: Ren Jun

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Address after: 230000 building 11, alumni enterprise innovation park, Luyang University of science and technology, northwest of the intersection of Tianshui road and Taihe Road, Luyang District, Hefei City, Anhui Province

Patentee after: Hengshuo semiconductor (Hefei) Co.,Ltd.

Address before: 230000 6 / F, building 2, gongtou Xinglu science and Technology Industrial Park, Luyang District, Hefei City, Anhui Province

Patentee before: ZBIT SEMICONDUCTOR Ltd.