CN106601667A - Metal interconnection layer structure with air gaps and preparation method thereof - Google Patents
Metal interconnection layer structure with air gaps and preparation method thereof Download PDFInfo
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- CN106601667A CN106601667A CN201611184320.2A CN201611184320A CN106601667A CN 106601667 A CN106601667 A CN 106601667A CN 201611184320 A CN201611184320 A CN 201611184320A CN 106601667 A CN106601667 A CN 106601667A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
Abstract
The invention provides a metal interconnection layer structure with air gaps and a preparation method thereof. The metal interconnection layer structure comprises a metal interconnection layer which is arranged on the surface of a substrate and is composed of a metal interconnection line and filler metal filling the space of the line. A barrier layer is arranged between the sidewall of the metal interconnection line and the filler metal of the metal interconnection layer. There are air gaps in the metal interconnection line. An isolating medium is formed on the barrier layer, the metal interconnection layer and the exposed surface of the substrate. The part of the barrier layer above the top of the filler metal is a tilted deformed barrier layer. The deformed barrier layer tilts towards the center of the air gaps so as to narrow or close the openings on the top of the air gaps. Medium is effectively prevented from filling the air gaps, biggest possible volume of the air gaps is achieved, and the effective k value of the air gaps is reduced. In addition, the method of the invention is compatible with the prior art, significantly reduces the effective k value of the air gaps, and meets the requirement of the future generation of technology for ultra-low k value of copper interconnection medium.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of metal interconnecting layer structure with air-gap and its system
Preparation Method.
Background technology
In recent years, the RC retardation ratio of copper interconnecting line become whole IC chip RC retardation ratio important component part it
One, and cannot be ignored.Industry generally reduces the RC retardation ratio of copper interconnecting line using lower dielectric constant (Low-k) medium.
90nm to 65nm technology generations, industry generally uses SiOCH medium of the dielectric constant 2.6～3.0, generally heavy using CVD technology
Product, is easy to technique integrated.Into 45nm technology generations, typically low k-value is further dropped using porous type SiOCH, its dielectric constant can
Up to 2.4～2.7；Also have using C, H organic media, its dielectric constant is 2.2～2.6.Into below 28nm technology generations, industry is needed
It is considered as the ULK media that dielectric constant is 2.0～2.2.Although the ultralow dielectric medium of prior art is by k values
Be down near 2.0, cannot still meet the technical requirements that metal live width further reduces, industry start to be considered as dielectric constant be
1 air is used as connected medium, i.e. air-gap, and the technology may obtain volume production application in 10nm and following technology generation.
The Integrated Solution of copper/air-gap has two kinds of main flows：One is situated between as interconnection layer using special material (condition decomposition)
Matter completes whole technological process, then applies a specified conditions (such as 400 DEG C of high temperature) to special material and brings it about decomposition, becomes
It is released into gaseous material, ultimately forms air-gap.Two is (such as SiO using conventional material2, Low-k) it is sacrificial as interconnection layer
Domestic animal medium, after current layer metallization is completed, anti-carves eating away sacrificial dielectric, deposits the medium of one layer of filling capacity difference, forms empty
Air gap.These technologies can meet the requirement that critical size further reduces, and the former has skill during special material release
Art risk；The latter is compatible with existing copper wiring technique, it is easier to realize volume production.
But, for the Integrated Solution of the Equations of The Second Kind copper/air-gap using conventional sacrificial medium, form the covering of air-gap
Medium although possessing poor filling capacity, also can some dielectric deposition on the bottom of air-gap and side wall, wherein, cover
Lid medium includes the inter-metal medium (IMD) that the copper wiring techniques such as higher SiCN barrier layers, the Low-k media of k values are used.Cause
This, inserting the medium of air-gap can reduce the effective volume of air-gap, and more seriously, the high dielectric constant inserted can be supported
The contribution that the air-gap that disappears is reduced to effective k values, and then effective k values of air-gap are extremely difficult to less than 2.0.
The content of the invention
In order to overcome problem above, the present invention is intended to provide a kind of metal interconnect between air-gap preparation method, so as to have
Effect limits overwrite media air inlet gap.
In order to achieve the above object, the invention provides a kind of metal interconnecting layer structure with air-gap, including：
One substrate；
Positioned at substrate surface is by metal interconnecting wires and is filled in the metal interconnecting layer that filling metal therein is collectively formed；
There is barrier layer between the metal interconnecting wires side wall and filling metal of metal interconnecting layer；
There is air-gap between metal interconnecting wires；And,
On the barrier layer, on the metal interconnecting layer and the exposed substrate surface is formed with spacer medium；
It is inclined change baffle that the barrier layer is higher by the part of filling metal top, becomes baffle to air-gap
Center position is inclined, so as to reduce or close the opening above air-gap.
Preferably, also there is spacer medium between metal interconnecting wires side wall and the air-gap.
Preferably, the thickness of the spacer medium between metal interconnecting wires side wall and the air-gap is 1～2nm.
Preferably, it is described to become baffle to the inclined angle of the air-gap center position into 30～70 °.
Preferably, the height for becoming baffle can be the 1/4-2/3 of the spacing of adjacent metal interconnecting wires.
In order to achieve the above object, present invention also offers a kind of preparation side of the metal interconnecting layer structure with air-gap
Method, including：
Step 01：One substrate is provided, also, is prepared by metal interconnecting wires in substrate surface and is filled in filling therein
The metal interconnecting layer that metal is constituted；Wherein, there is barrier layer between the metal interconnecting wires side wall of metal interconnecting layer and filling metal；
There is the first spacer medium between metal interconnecting wires；
Step 02：Oxidation processes are carried out to substrate surface, metal interconnecting layer Surface Creation oxide layer is made；
Step 03：With the oxide layer as mask, first spacer medium is etched, wherein, retain and be located at the stop
First spacer medium of layer side wall and positioned at the first spacer medium without metal interconnecting wires region, removes remaining first isolation and is situated between
Matter, in metal interconnecting wires region groove is formed；
Step 04：Remove the oxide layer of metal interconnecting layer Surface Creation so that the barrier layer top of metal interconnecting wires side wall
The filling metal top being higher by the metal interconnecting wires；The barrier layer top of metal interconnecting wires side wall is higher by the metal
The part of the filling metal top in interconnection line is used as change baffle；
Step 05：The change baffle is bombarded, the change baffle of top of the recess sidewall is made to described
The center position of groove is inclined；
Step 06：The second spacer medium is deposited on the substrate for complete step 05, it is mutual that the spacer medium is covered in metal
Connect layer surface, exposed dielectric surface and deformation barrier layer surface, so as to form air-gap in metal interconnecting layer.
Preferably, in the step 02, using O2Plasma carries out oxidation processes to substrate surface.
Preferably, in the step 02, the thickness of the oxide layer is the 1/ of the spacing of the adjacent metal interconnecting wires
4-2/3。
Preferably, in the step 03, the width of the first spacer medium of the barrier layer side wall of reservation is 1～2nm.
Preferably, in the step 04, the oxide layer is removed as etching agent using the non-oxidizing acid of dilution.
Preferably, in the step 05, physical bombardment is carried out to the change baffle using inert gas.
Preferably, the technological parameter of the physical bombardment includes：Adopt the flow of inert gas for 400～800sccm, adopt
Alternating current source is 13～14MHz, the AC power for adopting for 800～1200W, the process pressure for adopting for 80～
150mTorr。
Preferably, in the step 05, control it is described change baffle to the inclined angle in the groove center direction into
30～70 °.
The present invention limits the technology integrating method of the physically opening at the top of air-gap using metal barrier, can be effective
The spacer medium that prevention is covered on air-gap is inserted in air-gap, air gap volume as big as possible is obtained, while inhibiting
High dielectric constant air inlet gap, and then effectively reduce effective k values of air-gap.The air-gap process of the present invention
Compatible with prior art, the integrated difficulty of technique less, can effectively reduce effective k values of Equations of The Second Kind air gap technique, and then meet
In WeiLai Technology generation, is required the ultra low k of copper-connection medium.
Description of the drawings
Fig. 1 is the schematic diagram of the metal interconnecting layer structure with air-gap of a preferred embodiment of the present invention
Fig. 2 is the stream of the preparation method of the metal interconnecting layer structure with air-gap of a preferred embodiment of the present invention
Journey schematic diagram
Fig. 3～8 are the preparation method of the metal interconnecting layer structure with air-gap of a preferred embodiment of the present invention
Each step schematic diagram
Specific embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Step explanation.Certainly the specific embodiment, the general replacement known to those skilled in the art be the invention is not limited in
Cover within the scope of the present invention.
The present invention is described in further detail below in conjunction with accompanying drawing 1～7 and specific embodiment.It should be noted that, accompanying drawing
In the form of simplifying very much, using non-accurately ratio, and only conveniently, clearly to reach aid illustration the present embodiment
Purpose.
Fig. 1 is referred to, the metal interconnecting layer structure with air-gap in the present embodiment, including：
One substrate 101；Here substrate 101 can be silicon substrate.
Positioned at the surface of substrate 101 is by metal interconnecting wires and is filled in the metal interconnection that filling metal 103 therein is constituted
Layer；There is barrier layer 104 between the metal interconnecting wires side wall and filling metal 103 of metal interconnecting layer；Specifically, barrier layer 104
TaN/Ta metal barriers can be adopted；Here filling metal 103 can be copper；Here metal interconnecting layer has flat table
Face.
There is air-gap 109 between metal interconnecting wires；And,
On barrier layer 104, on metal interconnecting layer and the surface of exposed substrate 101 is formed with spacer medium；
In the present embodiment, it is inclined change baffle that barrier layer 104 here is higher by the part at the top of filling metal 103
107'.Inclined change baffle 107' to the center position of air-gap 109 is inclined, so as to the opening of the top of air-gap 109 be contracted
Little or closing.Here, also there is medium 102 between metal interconnecting wires side wall and air-gap 109.In order to prevent barrier layer 104
Integrity problem outer and that indirect belt is come is directly exposed to, certain thickness first isolation is retained on the wall of metal interconnecting wires side
Medium 102, preferably, the thickness of the part of the first spacer medium 102 is 1～2nm.Here, spacer medium includes being located at substrate 101
First spacer medium 102 on fringe region surface, the first spacer medium 102 positioned at metal interconnecting wires side wall and positioned at exposed
First spacer medium 102, the surface of exposed barrier layer 104, second spacer medium 108 at the top of filling metal 103.
In the present embodiment, become baffle to the inclined angle of air-gap center position into 30～70 °, preferably 50～
60 °, additionally, the height for becoming baffle 107 can be the 1/4-2/3 of the spacing of adjacent metal interconnecting wires, preferably 1/4
～1/3, so as to the opening size effectively reduced above air-gap, additionally it is possible to keep certain physical support intensity.
Fig. 2 is below referred to, a kind of preparation method of metal interconnecting layer with air-gap of the present embodiment is done in detail
Description, the preparation method includes：
Step 01：Refer to Fig. 3, there is provided a substrate 101, also, prepare by metal interconnecting wires on the surface of substrate 101 and
It is filled in the metal interconnecting layer that filling metal 103 therein is constituted；Wherein, the metal interconnecting wires side wall of metal interconnecting layer and filling
There is barrier layer 104 between metal 103；The first spacer medium 102 is filled between metal interconnecting wires；
Specifically, substrate 101 here can be silicon substrate.The material of the first spacer medium 102 can adopt conventional
Sacrificial layer material.It is possible, firstly, to but be not limited to be situated between in the isolation of the surface of substrate 101 deposition first using chemical vapor deposition method
Matter 102, first spacer medium 102 can be multilayer dielectricity layer, for example, include successively from the bottom up：SiCN dielectric barriers,
Low-k dielectric layers and SiON medium protective layers etc..It is then possible to using photoetching and etching technics in the first spacer medium 102
Etch metal interconnecting wires；Physical gas-phase deposition is adopted but be not limited to again barrier layer 104 is deposited in metal interconnecting wires, hinder
Barrier 104 can adopt TaN/Ta metal barriers, then adopt but be not limited to physical gas-phase deposition in metal interconnecting wires
Interior deposited metal inculating crystal layer, then using electroplating technology come the deposited metal in metal interconnecting wires, filling metal 103 is formed, here
Filling metal 103 can be copper；Finally, can be, but not limited to adopt CMP process by the first spacer medium 102
The metal removal on surface, obtains the metal interconnecting layer of flat surfaces.
Step 02：Fig. 4 is referred to, oxidation processes are carried out to the surface of substrate 101, make metal interconnecting layer Surface Creation oxide layer
105；
Specifically, can be, but not limited to here adopt O2Plasma carries out oxidation processes to the surface of substrate 101, so that
The filling metal 103 on filling metal 103 surface in metal interconnecting wires is converted into oxide layer 105, here, in the life of filling copper surface
Into fine and close cupric oxide (CuO2)；Here, oxidation processes are carried out to the surface of substrate 101, CCR capacitance coupling modes can be adopted
Dry etching technology, while being passed through purity oxygen, technological parameter includes：Oxygen flow is 100-300sccm, and process pressure is 20-
60mTorr, first using 60MHz high frequencies ionization source by O2Ionization, ionization power is 300-600W, then using 1～2MHz low frequencies
Bias source controls O2Plasma flies to surface of silicon, and bias power is 30-80W.Because sacrificial dielectric 102 is exposed to O simultaneously2
In plasma atmosphere, bias power is reduced as far as possible to weaken the physical bombardment effect suffered by the surface of sacrificial dielectric 102.This
Outward, the thickness of the oxide layer 105 on filling metal 103 surface can also be accurately controlled by adjusting bias power and process time
Degree.
This layer of oxide layer 105 can be used in subsequent etching sacrificial dielectric 102 to filling metal first as passivation layer
103 are protected, and secondly, are additionally operable to define the height on deformation after unloading barrier layer, so as to control the envelope of the groove to being subsequently formed
Lid degree.Here, because the height for becoming baffle is determined by the thickness of oxide layer, and become that baffle is too high is unfavorable for it
Physical support intensity, accordingly, it would be desirable to support experiment to select optimal oxidated layer thickness, oxygen according to design rule and actual physics
The thickness for changing layer is the 1/4～2/3 of the spacing of adjacent metal interconnecting wires, and preferably oxidated layer thickness is 1/4-1/3.
Step 03：Fig. 5 is referred to, with oxide layer 105 as mask, the first spacer medium 102 is etched, wherein, reservation is located at
First spacer medium 102 of the side wall of barrier layer 104 and positioned at the first spacer medium 102 without metal interconnecting wires region, removes
Remaining first spacer medium 102, the region removed in the first spacer medium 102 forms groove 106；
Specifically, using Low-k media dry etch process conventional in copper wiring technique by the quarter of the first spacer medium 102
Eating away, and removed etch residue using conventional wet clean process, repeat no more here.It should be noted that in order to
Prevent barrier layer 104 to be directly exposed to integrity problem outer and that indirect belt is come, it is impossible to by first between metal interconnecting wires every
All etch away from medium 102, and to retain certain thickness first spacer medium 102 on the wall of metal interconnecting wires side, preferably
, the thickness of first spacer medium 102 positioned at barrier layer side wall of reservation is 1～2nm.
Step 04：Fig. 6 is referred to, the oxide layer 105 of metal interconnecting layer Surface Creation is removed so that metal interconnecting wires side wall
The top of barrier layer 104 be higher by the top of filling metal 103 in metal interconnecting wires；
Specifically, can be, but not limited to remove oxide layer 105 using wet-etching technology.Here it is possible to using dilution
Non-oxidizing acid make a return journey removing oxide layer 105 as etching agent, the non-oxidizing acid of dilution is H2The ratio of O and HCl be 150～
200:1 watery hydrochloric acid, or for H2The ratio of O and HF is 1900～2000:1 dilute hydrofluoric acid；It is non-oxide that these dilute
Property acid only and oxide layer occurs chemical reaction, without corroding filling metal 103 and barrier layer 104 in metal interconnecting wires.
Here, after oxide layer 105 is removed, the barrier layer 104 of metal interconnecting wires side wall can project filling metal 103 and push up
Portion, the top of barrier layer 104 of interconnection channel side wall is higher by the part conduct at the top of filling metal 103 in metal interconnecting wires
" change baffle " 107；The height for becoming baffle 107 determines by the thickness of oxide layer 105, therefore, change baffle 107
Highly for adjacent metal interconnecting wires spacing 1/4～2/3, preferably, be 1/4～1/3, so obtain higher physics strong
Degree.
Step 05：Refer to Fig. 7 and combine Fig. 6, bombardment becomes baffle 107, makes the deformation of the top of the side wall of groove 106
Barrier layer 107 to the center position of groove 106 is inclined；
Specifically, change baffle 107 can be bombarded using physical bombardment method.Physical bombardment is specifically included using lazy
Property gas, such as argon gas, formed plasma come realize to become baffle bombardment.The technological parameter of physical bombardment includes：
The flow of inert gas is adopted for 400～800sccm, for 13～14MHz, the AC power for adopting is for 800 for the alternating current source for adopting
～1200W, the process pressure for adopting is for 80～150mTorr.Here, the high power short time is adopted under higher gas pressure intensity
Process conditions, inert gas plasma is obtained in that high-energy, simultaneously because mean free path shortens, collision probability becomes
Greatly, the up rightness of inert gas ion running body is deteriorated, and is conducive to becoming the lateral physical bombardment of baffle 107, and makes deformation
There is the inclination of certain angle in barrier layer 107, so as to form inclined change baffle 107'.Additionally, by process pressure and
AC power can control the inclined degree for becoming baffle 107', can control to become baffle 107' here to groove 106
The inclined angle of center position is 30～70 °, preferably 50～60 °, so as to effectively reduce the open-mouth ruler of the top of groove 106
It is very little, additionally it is possible to keep certain physical support intensity, be conducive to follow-up inter-level dielectric be covered in change baffle 107' on and
Groove 106 is set to form air-gap.
Step 06：Fig. 8 is referred to, the second spacer medium 108, the second isolation are deposited on the substrate 101 for completing step 05
Medium 108 is covered in metal interconnecting layer surface, the exposed surface of first spacer medium 102 and becomes the surface of baffle 104, so as to
Air-gap 109 is formed in metal interconnecting layer.
Specifically, the second spacer medium 108 and the first spacer medium 102 collectively form spacer medium.Second spacer medium
108 can be conventional inter-level dielectric.Here can be, but not limited to using the chemical vapor deposition in conventional copper wiring technique
Method depositing the second spacer medium 108, to form air-gap 109.Second spacer medium 108 can adopt SiCN dielectric impedances
One or more of layer, Low-k dielectric layers and SiON medium protective layers.Incorporated by reference to Fig. 8 and Fig. 6, due to becoming baffle 107'
The opening of the top of groove 106 is reduced, it is in the groove more difficult to get access 106 of the second spacer medium 108 or only a small amount of insignificant
The material of second spacer medium 108 can deposit to the bottom of groove 106, so that it is guaranteed that making whole groove 106 as air-gap 109, phase
Increase than the volume in traditional handicraft, the air-gap 109 prepared by the present embodiment, and the chi of control groove 106 can be passed through
The very little size to control air-gap 109, realizes the controllable of the size of air-gap 109.
It should be noted that in the present embodiment, becoming 1/4-1/ of the baffle 107 into the spacing of adjacent metal interconnecting wires
3 so that becoming after baffle 107 is inclined can only cover a part for the top of groove 106, and can not all cover groove 106 and push up
Portion；Certainly, in the present embodiment, the height of change baffle 107 may be arranged as the 1/ of the spacing of adjacent metal interconnecting wires
2-2/3, so as to becoming after baffle 107' is inclined to the center position of groove 106 and completely can covering the upper opening of groove 106
Cover.
In sum, the present invention limits the integrated side of technique of the physically opening at the top of air-gap using metal barrier
Method, can effectively prevent overwrite media from inserting in air-gap, air gap volume as big as possible be obtained, while inhibiting high dielectric
Constant medium air inlet gap, and then effectively reduce effective k values of air-gap.The present invention air-gap process with it is existing
Technical compatibility, the integrated difficulty of technique less, can effectively reduce effective k values of Equations of The Second Kind air gap technique, and then meet following skill
In art generation, is required the ultra low k of copper-connection medium.
Although the present invention is disclosed as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
Be not used to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention it is some more
Dynamic and retouching, the protection domain that the present invention is advocated should be defined by claims.
Claims (10)
1. a kind of metal interconnecting layer structure with air-gap, including：
One substrate；
Positioned at substrate surface is by metal interconnecting wires and is filled in the metal interconnecting layer that filling metal therein is collectively formed；
There is barrier layer between the metal interconnecting wires side wall and filling metal of metal interconnecting layer；
There is air-gap between metal interconnecting wires；And,
On the barrier layer, on the metal interconnecting layer and the exposed substrate surface is formed with spacer medium；Its feature
It is,
It is inclined change baffle that the barrier layer is higher by the part of filling metal top, becomes baffle to air-gap center
Direction inclines, so as to reduce or close the opening above air-gap.
2. the metal interconnecting layer structure with air-gap according to claim 1, it is characterised in that the metal interconnecting wires
Also there is spacer medium between side wall and the air-gap.
3. the metal interconnecting layer structure with air-gap according to claim 2, it is characterised in that the metal interconnecting wires
The thickness of the spacer medium between side wall and the air-gap is 1～2nm.
4. the metal interconnecting layer structure with air-gap according to claim 1, it is characterised in that the change baffle
It it is 30～70 ° to the inclined angle of the air-gap center position.
5. the metal interconnecting layer structure with air-gap according to claim 1, it is characterised in that the change baffle
Height be adjacent metal interconnecting wires spacing 1/4-2/3.
6. a kind of preparation method of the metal interconnecting layer structure with air-gap, it is characterised in that include：
Step 01：One substrate is provided, also, is prepared by metal interconnecting wires in substrate surface and is filled in filling metal therein
The metal interconnecting layer of composition；Wherein, there is barrier layer between the metal interconnecting wires side wall of metal interconnecting layer and filling metal；Metal
There is the first spacer medium between interconnection line；
Step 02：Oxidation processes are carried out to substrate surface, metal interconnecting layer Surface Creation oxide layer is made；
Step 03：With the oxide layer as mask, first spacer medium is etched, wherein, retain and be located at the barrier layer side
First spacer medium of wall and positioned at the first spacer medium without metal interconnecting wires region, removes remaining first spacer medium,
Groove is formed in metal interconnecting wires region；
Step 04：Remove the oxide layer of metal interconnecting layer Surface Creation so that the barrier layer top of metal interconnecting wires side wall is higher by
Filling metal top in the metal interconnecting wires；The barrier layer top of metal interconnecting wires side wall is higher by the metal interconnection
The part of the filling metal top in line is used as change baffle；
Step 05：The change baffle is bombarded, the change baffle of top of the recess sidewall is made to the groove
Center position incline；
Step 06：The second spacer medium is deposited on the substrate for complete step 05, the spacer medium is covered in metal interconnecting layer
Surface, exposed dielectric surface and deformation barrier layer surface, so as to form air-gap in metal interconnecting layer.
7. preparation method according to claim 6, it is characterised in that in the step 02, using O2Plasma is to substrate
Surface carries out oxidation processes；Also, the thickness of the oxide layer is the 1/4-2/3 of the spacing of the adjacent metal interconnecting wires.
8. preparation method according to claim 6, it is characterised in that in the step 03, the barrier layer side of reservation
The width of the first spacer medium of wall is 1～2nm.
9. preparation method according to claim 6, it is characterised in that in the step 04, using the non-oxidizable of dilution
Acid removes the oxide layer as etching agent.
10. preparation method according to claim 6, it is characterised in that in the step 05, using inert gas to described
Becoming baffle carries out physical bombardment；The technological parameter of the physical bombardment includes：The flow of inert gas is adopted for 400～
800sccm, for 13～14MHz, for 800～1200W, the process pressure for adopting is for 80 for the AC power for adopting for the alternating current source for adopting
～150mTorr；And, in step 05, control the change baffle to the inclined angle in the groove center direction into 30～
70°。
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| US20080014760A1 (en) * | 2006-07-12 | 2008-01-17 | Renesas Technology Corp. | Semiconductor device and method of manufacturing the same |
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| CN103165522A (en) * | 2011-12-15 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method of semiconductor structure |
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