CN106597102A - Magnetic thin film structure, magnetic sensitive sensor device with magnetic thin film structure, and application method thereof - Google Patents
Magnetic thin film structure, magnetic sensitive sensor device with magnetic thin film structure, and application method thereof Download PDFInfo
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- CN106597102A CN106597102A CN201611140368.3A CN201611140368A CN106597102A CN 106597102 A CN106597102 A CN 106597102A CN 201611140368 A CN201611140368 A CN 201611140368A CN 106597102 A CN106597102 A CN 106597102A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
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Abstract
The invention belongs to the field of sensors and particularly relates to a magnetic thin film structure, a magnetic sensitive sensor device with the magnetic thin film structure, and an application method thereof. The magnetic thin film structure provided by the invention can generate a spin rectification effect through time-varying electromagnetic excitation, thus a magnetic sensitive sensor of the thin film structure is modulated, and the adjustment of the working voltage window of the magnetic sensitive sensor and the improvement of measurement magnetic resistivity are included. In addition, the invention also provides a use method of outputting voltage window modulation in a given magnetic field and given DC working current and carrying out microwave power detection by using the above magnetic thin film structure or a corresponding magnetic sensitive sensor device, and through leading two electrode interfaces from the first magnetic layer and a second magnetic layer of the magnetic thin film structure or a corresponding magnetic sensitive sensor device, through a pre-calibrated inputted corresponding relation between different microwave powers and the magnetometric resistivity of the magnetic thin film structure, in an occasion of needing microwave detection, through detecting the change of spin rectification voltage or magnetic resistivity of the magnetic thin film structure, a microwave power value is obtained.
Description
Technical field
The invention belongs to sensor field, the magneto-dependent sensor device in particular to magnetic film structure and containing which
Part, application process.
Background technology
For Spin Valve and counterfeit spin valve type magneto-resistance device, its device resistance is general it is believed that full with external magnetic field change
Foot：Here RPFor two magnetic layer intensity direction cocurrent and parallels when resistance, RAPFor two magnetic
Resistance during layer magnetization direction antiparallel, Δ R=RAP-RPWhen being two magnetic layer intensity antiparallels with it is parallel when electricity
Resistance is poor, and θ is the angle of two magnetic layer intensity.When there is extraneous periodic electromagnetic field disturbance, such as additional appropriate time-varying field is electric
One layer of magnetic moment when field, time-varying magnetic field or changing currents with time in two magnetospheres will be in θHThere is precession near angle, so as to cause device
Resistance also cyclic fluctuation therewith, θHThe angle of two magnetic layer intensity when being no external dc operating current, according to Europe
Nurse law can obtain rectifying effect, and referred to as spin rectifying effect.With additional periodic current i=i0As a example by Sin (ω t), magnetoelectricity
Resistance device resistance is met by current disturbingAccording to Ohm's law, device is defeated
The voltage for going out is
That is wherein DC termsAs spin commutating DC voltage V0。
It is this to encourage what is caused jointly by magneto-resistance effect and periodically variable external electromagnetic field (magnetic field, electric field, electric current)
Rectifying effect, that is, spin rectifying effect.Spin rectifying effect can occur under the disturbance of various periodic electromagnetisms, including：
For general ferrimagnet and ferrimagnetic material and structure, periodical magnetic filed disturbance causes magnetic moment in θHIt is attached
Nearly precession, the alternating current produced with periodicity electric field perturbations are coupled and may occur from revolving rectifying effect；
For the magnetic material and structure that there is spin transfer torque effect, periodicity electric field perturbations produce alternating current and enter
And magnetic moment is caused in θHPrecession nearby, the alternating current itself produced with periodicity electric field perturbations are coupled and can cause spin rectification effect
Should；
For Electric Field Modulated magnetic anisotropy magnetic material and structure, periodicity electric field perturbations can directly contribute magnetic moment in θH
Precession nearby, the alternating current produced with periodicity electric field perturbations are coupled and can cause spin rectifying effect.
Under certain magnetic field H, the magnetic resistivity (MR, Magnetoresistance ratio) of magneto-dependent sensor can be defined
For：It is the important indicator of magneto-dependent sensor, generally by optimizing magneto-dependent sensor
The structure of material component or improvement device obtains high magneto-dependent sensor magnetic resistivity, but with device micro-nano optimization of material or changes
Enter device architecture raising magnetic resistivity and there is certain difficulty, therefore other means amplifying devices are adopted in practical devices application
The magnetic resistivity of output signal or raising device is particularly significant；On the other hand, magneto-resistance device, including various magneto-dependent sensors,
Output voltage window delta V=V under its given magnetic fieldAP-VP, due to its Δ V be always proportional to working direct current thus to
Typically it is difficult to modulate under fixed working direct current.This patent provides a kind of new handss based on spin rectifying effect and magnetic resistivity
Duan Liyong electromagnetic fieles are encouraged, and typically for example, microwave realizes that the amplification of measurement magnetic resistivity and given magnetic field are straight with given
Output voltage window modulation under stream operating current.
The content of the invention
It is an object of the invention to provide a kind of new measurement magnetoelectricity that magneto-dependent sensor is improved using spin rectifying effect
The magnetic film structure and device using method of resistance rate, to overcome prior art by optimizing the material and structure of magneto-dependent sensor
To obtain the limitation of high magneto-dependent sensor magnetic resistivity；Simultaneously, there is provided a kind of modulation magneto-dependent sensor is in given magnetic field and directly
The technology realization rate of the output voltage window under stream operating current；In addition, this patent is also provided being tied based on above-mentioned thin magnetic film
Structure and device realize the technical scheme of microwave power measurement.
In order to realize foregoing invention purpose, the invention provides technical scheme below：
A kind of nano-magnetic thin films structure, includes successively：Second magnetosphere, non-magnetosphere and the first magnetosphere；
First magnetosphere has fixed magnetisation direction, and the second magnetosphere has the variable direction of magnetization, meanwhile, first
Magnetosphere coercivity H 1 and the second magnetosphere coercivity H 2 meet Hc1 ＞ Hc2, so as to, when the second magnetic layer direction with
When external magnetic field H changes, the first magnetic layer direction is not affected by external magnetic field.
Further, first magnetosphere can be ferromagnetic material (FM) layer, ferromagnetic material layers and non-magnetic material (NM) layer
The artificial anti-ferromagnetic structure for constituting, or the direct pinned structure that ferromagnetic material is constituted with antiferromagnetic alloy material (AFM), or it is ferromagnetic
The indirect pinned structure that material, antiferromagnetic alloy material and non-magnetic material (NM) are constituted, the first magnetospheric intensity of magnetization
The mode control realization that applying induced magnetic field and/or growth are annealed after finishing under induced magnetic field when direction is growth.
Further, when first magnetosphere (M1) is constituted for ferromagnetic material layers, can directly by a kind of ferromagnetic material
Material constitutes (FM1), or constitutes (FM11/FM12 or FM11/ by two or more different ferromagnetic material layers is compound
FM12/ .../FM1i, i>2)；
Further, the artificial antiferromagnetic composite construction refers to two ferromagnetic material layers FM11 and FM12 by a non-magnetic material
Layer (NM1) is spaced apart (FM11/NM1/FM12), and the magnetization side of two magnetosphere FM11 and FM12 is caused by Interlayer Exchange Coupling
To collinearly reversely
Further, the direct pinned structure refers to inverse ferric magnetosphere directly and ferromagnetic layer contact (AFM1/FM1)；
Further, what described indirect pinning referred to inverse ferric magnetosphere and ferromagnetic layer interleaves one layer of very thin nonmagnetic metal
Layer (AFM1/NM1/FM1), or insertion composite bed composition (AFM1/FM11/NM1/FM12).
Second magnetosphere to be ferromagnetic material (FM) layer, the people that ferromagnetic material layers and non-magnetic material (NM) layer are constituted
Work anti-ferromagnetic structure,
Further, when second magnetosphere (M2) is constituted for ferromagnetic material layers, can directly by a kind of ferromagnetic material
Material constitutes (FM2), or constitutes (FM21/FM22 or FM21/ by two or more different ferromagnetic material layers is compound
FM22/ .../FM2j, j>2)；
Described artificial antiferromagnetic composite construction refers to two ferromagnetic material layers FM21 and FM22 by between a nonmagnetic material layer NM2
Separate (FM21/NM2/FM22), and cause the direction of magnetization of two magnetosphere FM21 and FM22 collinearly anti-by Interlayer Exchange Coupling
To.
Preferably, the antiferromagnetic alloy material is antiferromagnetic alloy material PtMn, IrMn, FeMn, NiMn or has
Anti-ferromagnetic oxide material, the thickness of the antiferromagnetic alloy material is 3～30nm；It is described with antiferromagnetic oxide
Material is CoO, NiO, Cr2O3、BiFeO3Or BiFexCo1-xO3；The thickness of the antiferromagnetic oxide is 2～50nm.
Preferably, the nonmagnetic metal material is Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au or its alloy, thick
Spend for 0.2～10nm.
Preferably, first magnetosphere and the second magnetospheric ferromagnetic material are feeromagnetic metal Co, Fe, Ni or ferromagnetic
Metal alloy compositions, or ferromagnetic oxide, or magnetic semi-metallic.Preferably, ferromagnetic metal alloy material be CoFe,
NiFe, CoFeB, CoFeBSi, NiFeCr or NiFeCrSi；Preferably, ferromagnetic oxide material is LasrMnO3、Fe3O4；It is excellent
Choosing, magnetic semi-metallic is CoFeAl, CoMnAl, CoMnGe or CoMnGa.
Further, the nonmagnetic layer material is nonmagnetic metal, non-magnetic semiconductor or nonmagnetic insulator.Non-magnetosphere is single
Inorganic insulating material or organic insulation constitute；Or non-magnetosphere is inorganic insulating material (Ii) and/or organic insulation
(Io) multilamellar that constitutes or Particles dispersed membrane structure.Further, complex multi layer films structure refers to [I herei/Io]m/Ii(1
≦m)；Composite granular film structure refers to that inorganic oxide nanoparticles are dispersed in organic substrate (Ii-Io) or organic insulation
Material granule is dispersed in (I in inorganic matrixo-Ii) composite granular film that formed.
Preferably, inorganic insulating material is AlOp、MgO、Mg1-qZnqO、MgjAl2/3(1-q)O、BaTiO3、AlN、Ta2O5、
ZnO、ZrO2、HfO2、TiO2And SiO2In one or more；When single inorganic insulating material constitutes non-magnetosphere, thickness degree is 0.5
～5nm；Wherein, 0<p<3/2,0<q<1；
Preferably, organic insulation (Io) for polyimides (PI), polyamide (PAI), poly- Schiff base (PA), polysulfones
(PS) one or more in, when single organic insulation constitutes non-magnetosphere, thickness degree is 3nm～100nm；Multilamellar or granule
Complex thin film structure non-magnetosphere film thickness is 1nm～100nm.
Further, the magnetic film structure also includes substrate (Substrate, Sub), cushion (Buffer
Layer, BL) and coating (Capping Layer, CL)；
The cushion is arranged on substrate, and first magnetosphere is arranged on the cushion；The coating sets
Put on second magnetosphere；
First magnetosphere, the second magnetosphere respectively respectively with two electrode conductions, i.e. respectively the first magnetosphere first
Electrode, the first magnetosphere second electrode, the second magnetosphere first electrode and the second magnetosphere second electrode.
Further, the cushion be resistance it is larger and with substrate be in close contact metal material, described cushion
Thickness is 3～50nm.Preferably, the cushion be Ta, Ru, Cu, Cr, Au, Ag and Pt in a kind of single thin film or
For the plural layers of several above-mentioned metals.
Further, the coating is tied for protecting to be difficult to be oxidized and corroding and the preferable metal level of electric conductivity
Structure is not oxidized and corrodes；The thickness of the coating is 1～100nm.Preferably, the coating be Al, Ta, Ru, Cu,
A kind of single thin film or the plural layers for several above-mentioned metals in Cr, Au, Ag and Pt；
The substrate is inorganic substrate or RF magnetron sputtering；The thickness of the substrate is 0.05～10mm.Preferably, the nothing
Machine substrate is glass substrate, Si substrates, Si/SiO2Substrate or SiC substrate；When the substrate is RF magnetron sputtering, preferred poly- second
Alkene, polypropylene, polystyrene, according to a kind of single-layer substrate in p-phthalic acid diol ester, polyimides or Merlon or it is
The compound substrate of several above-mentioned materials；
Above-mentioned thin film core texture is summarized as follows：
Sub/BL/FM1/NM/FM2/CL；
Or Sub/BL/FM1/NM/FM21/NM2/FM22/CL；
Or Sub/BL/AFM1/FM1/NM/FM2/CL；
Or Sub/BL/AFM1/FM1/NM/FM21/NM2/FM22/CL；
Or Sub/BL/AFM1/NM1/FM11/NM/FM2/CL；
Or Sub/BL/AFM1/NM1/FM11/NM/FM21/NM2/FM22/CL；
Or Sub/BL/AFM1/FM11/NM1/FM12/NM/FM2/CL；
Or Sub/BL/AFM1/FM11/NM1/FM12/NM/FM21/NM2/FM22/CL；
Present invention simultaneously provides one kind passes through -30dBm～20dBm, frequency is swashed in the time-varying electromagnetism of 0.1GHz～70GHz
Encourage, typically such as, microwave excitation produces spin rectifying effect in above-mentioned magnetic film structure and corresponding magneto-dependent sensor device,
And then strengthen above-mentioned magnetic film structure and corresponding magneto-dependent sensor device measurement magnetic resistivity, and modulate aforementioned thin magnetic film knot
The method of structure and corresponding magneto-dependent sensor device output voltage window；Also provide based on above-mentioned magnetic film structure and magnetosensitive simultaneously
Sensor component realizes the technical scheme of microwave power measurement.Realize that the mode of time-varying electromagnetic excitation is can also be using microwave magnetic
Field couples the magnetic resonance for producing with the second magnetosphere, or caused by acting on the electric field for producing with the second magnetosphere using microwave electric field
Magnetic resonance.
The present invention provides one kind and passes through -30dBm～20dBm, time-varying electromagnetic excitation of the frequency in 0.1GHz～70GHz, allusion quotation
Type such as, microwave excitation, produce spin rectifying effect in above-mentioned magnetic film structure, so strengthen aforementioned magnetic film structure and
The method of corresponding magneto-dependent sensor magnetic resistivity.
For upper described magnetic film structure or corresponding magneto-dependent sensor device, when only time-varying electric field is encouraged, allusion quotation
During the excitation of type such as microwave injection magneto-dependent sensor device, can be in the first magnetosphere and the second magnetosphere due to spinning rectifying effect
Between can produce a DC voltage V0(H)(V0(H) ＜ 0) voltage size and microwave power P, externally-applied magnetic field H and thin film
Concrete structure itself is relevant, when externally-applied magnetic field H determines, the power of the size of the voltage and injection microwave within certain limits into
Direct ratio, i.e. V0(H)=k × p, k can measuring for proportionality coefficient here.
If for the corresponding magneto-dependent sensor device of upper described magnetic film structure applies external magnetic field H, and in the first magnetic
Apply a Constant Direct Current operating current I between layer and the second magnetosphere0(I0＞ 0), according to magneto-resistor principle, the total electricity on device
Pressure V (H) is the function of externally-applied magnetic field H, and the resistance under certain external magnetic field H isAnd work as externally-applied magnetic field H sizes not
During change, voltage V (H) is abbreviated as the expression formula of V, i.e. resistance and can also be expressed as
When external magnetic field makes the second magnetospheric direction of magnetization antiparallel with the first magnetospheric direction of magnetization, first
Voltage V is produced between magnetosphere and the second magnetosphereAP, the magnitude of voltage size only with membrane structure or device nature and outer
Plus working direct current I0It is relevant, it is unrelated with externally-applied magnetic field, then there is resistanceIn the same manner, when regulation external magnetic field makes second
When the magnetospheric direction of magnetization is with the first magnetospheric direction of magnetization cocurrent and parallel, between the first magnetosphere and the second magnetosphere
Produce voltage VP, the magnitude of voltage also only with membrane structure or device nature and external dc operating current I0It is relevant, remember this
When resistance
For aforesaid magneto-dependent sensor, during its work, according to external magnetic field H difference, its first magnetosphere and the second magnetic
All the time between parallel and antiparallel between, the magnetic resistivity under arbitrary externally-applied magnetic field H can be defined as layer angle：And in the case where the size of externally-applied magnetic field H is constant,
The formula can be expressed as
For the corresponding magneto-dependent sensor device of upper described magnetic film structure is operated in direct-current working volts I when which0(I0＞ is 0)
When lower, additional electromagnetic fiele will be encouraged simultaneously, typically such as microwave excitation, then according to magneto-resistor principle and spin rectifying effect, its
Total voltage on device is：V ' (H)=V (H)+V0(H), corresponding measurement resistance is：
Particularly, when the first magnetospheric direction of magnetization is antiparallel with the second magnetospheric direction of magnetization, the voltage for measuring is：
V′AP=VAP+V0AP, V here0AP(V0AP＜ 0) be only injected into when two magnetic layer intensity directions are antiparallel microwave latter two
Voltage between magnetosphere；Now the measurement resistance of anti-parallel state is：
Therefore, under microwave modulation, the actual measurement magnetic resistivity of the corresponding magneto-dependent sensor device of above-mentioned magnetic film structure isTheory shows to work asWhen, there are MR ' ＞ MR, magnetic resistivity can be obtained
Strengthen, further experiment shows to aforementioned magnetic film structure and corresponding magneto-dependent sensor device, become at that time electromagnetic excitation-
30dBm～20dBm, frequency is in 0.1GHz～70GHz, above-mentioned relationAlways meet.Therefore can realize
Time-varying electromagnetic excitation, typically such as, microwave excitation strengthens aforementioned magnetic film structure and corresponding magneto-dependent sensor magnetic resistivity.
It is a kind of to utilize magnetic film structure as above and/or corresponding magneto-dependent sensor device and electromagnetic fiele to swash
Encourage, typically such as, microwave excitation, the method for modulating magneto-dependent sensor operating voltage window.Specifically, i.e., for given magnetic field
I under H and direct current0Magneto-resistance device, its output voltage V ' (H) by microwave power adjust, wherein, V ' (H)=V (H)+V0(H),
And in the case of little bias voltage, according to spin rectifying effect and the ultimate principle of magneto-resistance effect, have V ' (H)=V (H)+V0
(H)=aI0+ kP, wherein a and k are constant, and structure and material its value to giving is only relevant with magnetic field H and microwave frequency f, I0For
Working direct current, P are microwave power, are modulated given magnetic field H and direct current by the power or frequency that change injection microwave
Operating current I0Under output voltage window.
It is micro- that present invention offer one kind utilizes magnetic film structure as above and/or corresponding magneto-dependent sensor device to carry out
The detection method of wave power, comprises the steps of：
, calibration：Under given magnetic field condition, inject to aforementioned magnetic film structure and/or corresponding magneto-dependent sensor device
The microwave of the different capacity under assigned frequency, measures the magnitude of voltage between the first magnetosphere and the second magnetosphere and records；
Measurement：Under with calibration condition identical magnetic field, for the unknown power microwave under beacon frequency, as sharp
Encourage and be applied to described magnetic film structure and/or corresponding magneto-dependent sensor device, and while measure the first magnetosphere and the
Magnitude of voltage between two magnetospheres, is compareed with scaled values and draws microwave power to be measured.
The present invention also provides one kind and utilizes magnetic film structure as above and/or corresponding magneto-dependent sensor device to carry out
The detection method of microwave power, the method are applied to the unknown microwave power measurement of frequency and power, and step is as follows：
Under given magnetic field condition, different capacity microwave and magnetic film structure magnetoelectricity under assigned frequency are obtained by measuring
Resistance rate mapping table；
Under identical given magnetic field condition, microwave to be measured is injected in the magnetic film structure, and measure thin magnetic film
The magnetic resistivity of structure, obtains microwave power to be measured according to the magnetic resistivity control mapping table.
Further, after injecting microwave to be measured, the method for measuring magnetic film structure magnetic resistivity comprises the steps：
Working direct current I is applied to magnetic film structure0, voltage V ' between the second magnetosphere of measurement and the first magnetosphere
(H)；
It is antiparallel with the first magnetosphere using external magnetic field regulation the second magnetic layer direction, to the first magnetosphere
Apply working direct current I0, voltage V ' between the second magnetosphere of measurement and the first magnetosphereAP；
Calculate real-time magnetic resistivityWherein
Further, after injecting microwave to be measured, the method for measuring magnetic film structure magnetic resistivity comprises the steps：
After measuring the magnetic resistivity MR ' under microwave to be measured, it is P using attenuation decibel number known at least one-aAttenuator
To inject after magnetic film structure after microwave attenuation to be measured, and measure the magnetic resistivity of thin magnetic film starvation stock again；
Mapping table is compareed simultaneously to obtain microwave power to be measured and/or frequency using the result of multiple measurement.
Compared with prior art, beneficial effects of the present invention：The present invention is in current industry, generally passing through to optimize magnetosensitive
The structure of the material component or improvement device of sensor obtains high magneto-dependent sensor magnetic resistivity, but optimization of material or improvement device
Part structure improves magnetic resistivity and there is certain limit, there is provided one kind can be encouraged using electromagnetic fiele, typically
Such as microwave excitation, improve magneto-dependent sensor measurement magnetic resistivity respective magnetic membrane structure and magneto-dependent sensor device with
And using method；Meanwhile, magneto-resistance device, including various magneto-dependent sensors, output voltage window delta V=under its given magnetic field
VAP-VP, as Δ V is proportional to working direct current, therefore typically given electric current being difficult to modulate, this patent provides a kind of new handss
Duan Liyong electromagnetic fieles, typically for example, microwave excitation realizes the output electricity under given magnetic field and given working direct current
Pressure window modulation.In addition, present invention also offers magnetic film structure or corresponding magneto-dependent sensor device using the present invention enter
The method of row microwave power detection, which not only can realize the power detection to given frequency microwave, it is also possible to determine unknown frequency
The frequency and power of rate microwave.
Description of the drawings：
Fig. 1 a are the magnetic film structure that provides of the present invention and the magneto-dependent sensor device comprising the magnetic film structure
Tomography schematic diagram.
The magneto-dependent sensor components schematic diagram that Fig. 1 b present invention is provided.
Fig. 2 is the magnetic resistivity amplifying circuit circuit diagram that the present invention is provided.
Fig. 3 is a kind of magnetic film structure and the magneto-dependent sensor device comprising the magnetic film structure that the present invention is provided
Under the working direct current of 1 μ A, while magneto-resistor when applying the microwave excitation of 9GHZ different capacities is implemented with changes of magnetic field
Effect.
Fig. 4 is a kind of magnetic film structure and the magneto-dependent sensor device comprising the magnetic film structure that the present invention is provided
Part, under the microwave excitation of 1GHz different capacities, the V of acquisition0Implementation result figure, including：In the first magnetosphere and the second magnetic
Layer into parallel state i.e., V0PWhen value, the first magnetosphere and the second magnetosphere into anti-parallel state i.e., V0APWhen value, and V0APWith
V0PDifference Δ V0And the absolute value of difference | Δ V0| with the change of microwave power.
Fig. 5 is a kind of magnetic film structure and the magneto-dependent sensor device comprising the magnetic film structure that the present invention is provided
Part, under the working direct current of 1 μ A, while under the microwave excitation of applying different frequency and different capacity, the magneto-resistor of acquisition
The enhanced implementation result of rate.
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment the present invention is described in further detail.But this should not be interpreted as this
The scope for inventing above-mentioned theme is only limitted to below example, and all technologies realized based on present invention belong to the present invention
Scope.
Embodiment 1：As shown in Figure 1a, the present embodiment provides a kind of nano-magnetic thin films structure, includes successively from the bottom to top：
First magnetosphere (M1), non-magnetosphere (NM) and the second magnetosphere (M2)；First magnetosphere has a fixed magnetisation direction, and second
Magnetosphere with the initial magnetization direction not conllinear with the first magnetospheric direction of magnetization, meanwhile, the first magnetosphere coercivity H 1
Hc1 ＞ Hc2 are met with the second magnetosphere coercivity H 2, so as to, when the second magnetic layer direction changes with external magnetic field H, the
One magnetic layer direction is not affected by external magnetic field.Further, first magnetosphere can be ferromagnetic material (FM) layer, ferromagnetic
The artificial anti-ferromagnetic structure that material layer is constituted with non-magnetic material (NM) layer, or ferromagnetic material and antiferromagnetic alloy material (AFM) structure
Into direct pinned structure, or the indirect pinned structure that ferromagnetic material, antiferromagnetic alloy material and non-magnetic material (NM) are constituted, institute
Applying induced magnetic field and/or growth when stating the first magnetospheric magnetization direction to grow is annealed after finishing under induced magnetic field
Mode control realization.
Further, when first magnetosphere (M1) is constituted for ferromagnetic material layers, can directly by a kind of ferromagnetic material
Material constitutes (FM1), or constitutes (FM11/FM12 or FM11/ by two or more different ferromagnetic material layers is compound
FM12/ .../FM1i, i>2)；
Further, the artificial antiferromagnetic composite construction refers to two ferromagnetic material layers FM11 and FM12 by a non-magnetic material
Layer (NM1) is spaced apart (FM11/NM1/FM12), and the magnetization side of two magnetosphere FM11 and FM12 is caused by Interlayer Exchange Coupling
To collinearly reversely
Further, the direct pinned structure refers to inverse ferric magnetosphere directly and ferromagnetic layer contact (AFM1/FM1)；
Further, what described indirect pinning referred to inverse ferric magnetosphere and ferromagnetic layer interleaves one layer of very thin nonmagnetic metal
Layer (AFM1/NM1/FM1), or insert artificial anti-ferromagnetic structure composition (AFM1/FM11/NM1/FM12/FM1).
Second magnetosphere to be ferromagnetic material (FM) layer, the people that ferromagnetic material layers and non-magnetic material (NM) layer are constituted
Work anti-ferromagnetic structure,
Further, when second magnetosphere (M2) is constituted for ferromagnetic material layers, can directly by a kind of ferromagnetic material
Material constitutes (FM2), or constitutes (FM21/FM22 or FM21/ by two or more different ferromagnetic material layers is compound
FM22/ .../FM2j, j>2)；
Described artificial antiferromagnetic composite construction refers to two ferromagnetic material layers FM21 and FM22 by between a nonmagnetic material layer NM2
Separate (FM21/NM2/FM22), and cause the direction of magnetization of two magnetosphere FM21 and FM22 collinearly anti-by Interlayer Exchange Coupling
To.
Preferably, the antiferromagnetic alloy material is antiferromagnetic alloy material PtMn, IrMn, FeMn, NiMn or has
Anti-ferromagnetic oxide material, the thickness of the antiferromagnetic alloy material is 3～30nm；It is described with antiferromagnetic oxide
Material is CoO, NiO, Cr2O3、BiFeO3Or BiFexCo1-xO3；The thickness of the antiferromagnetic oxide is 2～50nm.
Preferably, the nonmagnetic metal material is Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au or its alloy, thick
Spend for 0.2～10nm.
Preferably, first magnetosphere and the second magnetospheric ferromagnetic material are feeromagnetic metal Co, Fe, Ni or ferromagnetic
Metal alloy compositions, or ferromagnetic oxide, or magnetic semi-metallic.Preferably, ferromagnetic metal alloy material be CoFe,
NiFe, CoFeB, CoFeBSi, NiFeCr or NiFeCrSi；Preferably, ferromagnetic oxide material is LasrMnO3、Fe3O4；It is excellent
Choosing, magnetic semi-metallic is CoFeAl, CoMnAl, CoMnGe or CoMnGa.
Further, the nonmagnetic layer material is nonmagnetic metal, non-magnetic semiconductor or nonmagnetic insulator.Non-magnetosphere is single
Inorganic insulating material or organic insulation constitute；Or non-magnetosphere is inorganic insulating material (Ii) and/or organic insulation
(Io) multilamellar that constitutes or Particles dispersed membrane structure.Further, complex multi layer films structure refers to [I herei/Io]m/Ii(1
≦m)；Composite granular film structure refers to that inorganic oxide nanoparticles are dispersed in organic substrate (Ii-Io) or organic insulation
Material granule is dispersed in (I in inorganic matrixo-Ii) composite granular film that formed.
Preferably, inorganic insulating material is AlOp、MgO、Mg1-qZnqO、MgjAl2/3(1-q)O、BaTiO3、AlN、Ta2O5、
ZnO、ZrO2、HfO2、TiO2And SiO2In one or more；When single inorganic insulating material constitutes non-magnetosphere, thickness degree is 0.5
～5nm；Wherein, 0<p<3/2,0<q<1；
Preferably, organic insulation (Io) for polyimides (PI), polyamide (PAI), poly- Schiff base (PA), polysulfones
(PS) one or more in, when single organic insulation constitutes non-magnetosphere, thickness degree is 3nm～100nm；Multilamellar or granule
Complex thin film structure non-magnetosphere film thickness is 1nm～100nm.
Embodiment 2：As shown in Figure 1 a, 1 b, present invention simultaneously provides one kind can easily pass through time-varying electromagnetic excitation
Magnetic film structure produces spin rectifying effect, and so as to improve the magneto-dependent sensor device of measurement magnetic resistivity, the magnetosensitive is sensed
The magnetic film structure provided comprising such as embodiment 1 by device device, also comprising substrate S ub, cushion BL and coating CL；
The cushion is arranged on substrate, and first magnetosphere is arranged on the cushion；The coating sets
Put on second magnetosphere；
First magnetosphere, the second magnetosphere respectively respectively with two electrode conductions, i.e. respectively the first magnetosphere first
Electrode (P11), the first magnetosphere second electrode (P12), the second magnetosphere first electrode (P21) and the second magnetosphere second electrode
(P22)。
Further, the cushion be resistance it is larger and with substrate be in close contact metal material, described cushion
Thickness is 3～50nm.Preferably, the cushion be Ta, Ru, Cu, Cr, Au, Ag and Pt in a kind of single thin film or
For the plural layers of several above-mentioned metals.
Further, the coating is tied for protecting to be difficult to be oxidized and corroding and the preferable metal level of electric conductivity
Structure is not oxidized and corrodes；The thickness of the coating is 1～100nm.Preferably, the coating be Al, Ta, Ru, Cu,
A kind of single thin film or the plural layers for several above-mentioned metals in Cr, Au, Ag and Pt；
The substrate is inorganic substrate or RF magnetron sputtering；The thickness of the substrate is 0.05～10mm.Preferably, the nothing
Machine substrate is glass substrate, Si substrates, Si/SiO2Substrate or SiC substrate；When the substrate is RF magnetron sputtering, preferred poly- second
In alkene, polypropylene, polystyrene, poly terephthalic acid diol ester, polyimides or Merlon a kind of single-layer substrate or it is
The compound substrate of several above-mentioned materials；
Each Rotating fields component for meeting the magneto-dependent sensor device of such scheme is including but not limited to following several：
Sub/BL/FM1/NM/FM2/CL；
Or Sub/BL/FM1/NM/FM21/NM2/FM22/CL；
Or Sub/BL/AFM1/FM1/NM/FM2/CL；
Or Sub/BL/AFM1/FM1/NM/FM21/NM2/FM22/CL；
Or Sub/BL/AFM1/NM1/FM11/NM/FM2/CL；
Or Sub/BL/AFM1/NM1/FM11/NM/FM21/NM2/FM22/CL；
Or Sub/BL/AFM1/FM11/NM1/FM12/NM/FM2/CL；
Or Sub/BL/AFM1/FM11/NM1/FM12/NM/FM21/NM2/FM22/CL；
Specifically, give magneto-dependent sensor device layers structure preferred 17 examples in table 1, unit is to receive in table 1
Rice.
Table 1
Further, conventional quasiconductor micro-nano processing technique is adopted in above-mentioned thin film manufacturing process, including：It is gluing, front
Dry, uv-exposure carried out using the photolithography plate with figure to be processed or using electron beam exposure, development, fixing, after bake, ion
Beam etching, acetone remove photoresist, and obtain the magneto-dependent sensor device shown in Fig. 1 a.
Embodiment 3：As shown in Fig. 2 the present embodiment provides one kind to be used to improve thin magnetic film knot based on above-mentioned principle simultaneously
Structure or magneto-dependent sensor device measure the magnetic resistivity amplifying circuit of magnetic resistivity, pass comprising magnetosensitive as described in Example 2
Sensor device U, and, electric capacity C, inductance L, first switch S1 and second switch S2；
First magnetosphere M1 first electrodes P11 pass sequentially through electric capacity C, first switch S1 and apply microwave signal；First
Magnetosphere first electrode P11 also passes sequentially through inductance L and second switch S2 and applies working direct current signal I0；
First magnetosphere second electrode P12, the second magnetosphere second electrode P22 are grounded simultaneously.
During use, second electrode P21 of magneto-dependent sensor device U is connected with voltage Table V left end, voltage Table V right-hand member ground connection.
Closure switch S1, disconnect switch S2, and apply external magnetic field, according to spin rectifying effect, in the feelings of microwave injection
Under condition, voltage Table V can measure voltage V0(H), adjust voltage when external magnetic field makes two magnetic layer intensity directions antiparallel
Table can measure voltage VOAP(VOAP＜ is 0)；Adjust voltmeter when external magnetic field makes two magnetic layer intensity direction cocurrent and parallels to survey
Obtain voltage VOP(VOP＜ is 0)；Switch S1 is disconnected, closure switch S2 apply to above-mentioned magnetic film structure or magneto-dependent sensor device
External magnetic field, can measure voltage V (H) in voltmeter；The second magnetospheric direction of magnetization and the first magnetosphere are made when external magnetic field is adjusted
The direction of magnetization it is antiparallel when, voltmeter measures voltage VAP；The second magnetospheric direction of magnetization and the is made when external magnetic field is adjusted
The one magnetospheric direction of magnetization in the same direction to it is parallel when, voltmeter measures voltage VP。
Closure switch S1, now have microwave to inject, closure switch S2, and while apply external magnetic field, then voltmeter can be measured
Voltage V ' (H)=V (H)+V0(H)；The first magnetospheric direction of magnetization and the second magnetospheric magnetization side are made when external magnetic field is adjusted
To it is antiparallel when the voltage V ' that measuresAP=VAP+VOP。
It should be noted that it is -30dBm～20dBm that microwave in the present embodiment is preferably power, frequency be 0.1GHz～
70GHz。
Embodiment 4：The present embodiment provides a kind of 2 institute of magnetic film structure or embodiment provided using such as embodiment 1
The magneto-dependent sensor device of offer, under the circuit shown in embodiment 3, applies the working direct current of 1 μ A, 9GHz different capacities
Microwave excitation under the magneto-resistor curve that obtains, i.e. the device resistance for obtaining is measured under different magnetic field.For given magnetic field H and
I under direct current0Magneto-resistance device, its output voltage V ' (H) by microwave power adjust, wherein, V ' (H)=V (H)+V0(H), and
In the case of little bias voltage, according to spin rectifying effect and the ultimate principle of magneto-resistance effect, there is V ' (H)=V (H)+V0(H)=
aI0+ kP, wherein a and k are constant, and structure and material its value to giving is only relevant with magnetic field H and microwave frequency f, I0For direct current
Operating current, P are microwave power, are modulated given magnetic field H and operating current by the power or frequency that change injection microwave
I0Under output voltage window.In the present embodiment, as shown in figure 3, by applying the maximum microwave to -8dBm, and without microwave
Compare during applying, be capable of achieving continuous modulation of the voltage output window value by 4mV～2.4mV to 2.6mV～1.4mV, as seen from the figure
Significant output voltage window modulation is obtained, while calculate according to data in graph form understanding that magnetic resistivity is strengthened..
Embodiment 5：As shown in figure 5, the present embodiment provide it is a kind of using the magnetic film structure provided such as embodiment 1 or
The magneto-dependent sensor device provided by embodiment 2, under the circuit shown in embodiment 3, applies the working direct current of 1 μ A, no
The enhanced method of magnetic resistivity obtained under the microwave excitation of same frequency and different capacity.
It is when only time-varying electric field is encouraged, when typically encouraging such as microwave injection magneto-dependent sensor device, whole due to spinning
Stream effect can produce a DC voltage V between the first magnetosphere and the second magnetosphere0(H)(V0(H) ＜ 0) voltage
Size is relevant with microwave power P, externally-applied magnetic field H and thin film concrete structure itself, when externally-applied magnetic field H determines, the voltage
Size is directly proportional within certain limits to the power of injection microwave, i.e. V0(H)=k × p, here k can test survey for proportionality coefficient
Fixed, as shown in Figure 4, above-mentioned signal is linear with microwave power.
If for the corresponding magneto-dependent sensor device of upper described magnetic film structure applies external magnetic field H, and in the first magnetic
Apply a Constant Direct Current operating current I between layer and the second magnetosphere0(I0＞ 0), according to magneto-resistor principle, the total electricity on device
Pressure V (H) is the function of externally-applied magnetic field H, and the resistance under certain external magnetic field H isAnd work as externally-applied magnetic field H sizes not
During change, voltage V (H) is abbreviated as the expression formula of V, i.e. resistance and can also be expressed as
When external magnetic field makes the second magnetospheric direction of magnetization antiparallel with the first magnetospheric direction of magnetization, first
Voltage V is produced between magnetosphere and the second magnetosphereAP, the magnitude of voltage size only with membrane structure or device nature and outer
Plus working direct current I0It is relevant, it is unrelated with externally-applied magnetic field, then there is resistanceIn the same manner, when regulation external magnetic field makes second
When the magnetospheric direction of magnetization is with the first magnetospheric direction of magnetization cocurrent and parallel, between the first magnetosphere and the second magnetosphere
Produce voltage Vp, the magnitude of voltage also only with membrane structure or device nature and external dc operating current I0It is relevant, remember this
When resistance
For aforesaid magneto-dependent sensor, according to external magnetic field H difference, its first magnetosphere and the second magnetosphere during its work
All the time between parallel and antiparallel between, the magnetic resistivity under arbitrary externally-applied magnetic field H can be defined as angle：And in the case where the size of externally-applied magnetic field H is constant,
The formula can be expressed asFor upper described magnetic film structure phase
Magneto-dependent sensor device is answered to be operated in direct-current working volts I when which0(I0＞ 0) under when simultaneously additional electromagnetic fiele excitation, typical case
Such as microwave excitation, then according to magneto-resistor principle and spin rectifying effect, the total voltage on its device is：V ' (H)=V (H)+
V0(H), corresponding measurement resistance is：Particularly, when the first magnetospheric magnetization
When direction is antiparallel with the second magnetospheric direction of magnetization, the voltage for measuring is：V′AP=VAP+V0AP, V here0AP(V0AP＜
0) it is the voltage that is only injected into when two magnetic layer intensity directions are antiparallel between microwave latter two magnetosphere；Now antiparallel
The measurement resistance of state is：Therefore, under microwave modulation, the corresponding magnetosensitive of above-mentioned magnetic film structure
The actual measurement magnetic resistivity of sensor component is
As shown in Figure 5, magnetic resistivity is significantly increased.Meanwhile, from also scheming, magnetic resistivity under different frequency
Different linear relationships are met with the enhancing of microwave power, after using the relation calibration, be capable of achieving to determine microwave to be measured
Frequency and power.
Embodiment 6：The present embodiment provides a kind of 2 institute of magnetic film structure or embodiment provided using such as embodiment 1
The magneto-dependent sensor device of offer, under the circuit shown in embodiment 3, does not apply working direct current, applies 1GHz difference work(
The spin commutating voltage obtained under the microwave excitation of rate.The power measurement of the microwave of given frequency can be carried out using the relation, is had
Body step is as follows：
Calibration：Under given magnetic field condition, inject to above-mentioned magneto-dependent sensor device certain frequency different capacity it is micro-
Ripple, measures the magnitude of voltage between the first magnetosphere and the second magnetosphere and records；As shown in the present embodiment Fig. 4.
Measurement：Under with calibration condition identical magnetic field, for the unknown power microwave under beacon frequency, as sharp
Encourage and be applied on magneto-dependent sensor device, and while measure the magnitude of voltage between the first magnetosphere and the second magnetosphere, with calibration
Value control draws microwave power to be measured.
Embodiment 7：The present embodiment provides a kind of 2 institute of magnetic film structure or embodiment provided using such as embodiment 1
The magneto-dependent sensor device of offer, under the circuit shown in embodiment 3, applies 1 μ A working direct currents, realizes frequency and power
The method of unknown microwave power measurement, step are as follows：
Calibration：To aforementioned magnetic film structure and/or corresponding magneto-dependent sensor device injected frequency f1PowerIt is micro-
Ripple, while applying Constant Direct Current operating current I0, while now changing external magnetic field, measure above-mentioned corresponding magneto-dependent sensor device
Measurement resistance with external magnetic field change curve, i.e. record different magnetic field under measure the resistance for obtaining, be designated asOnly change
Power isRepeat said process, obtainFrequency f can be obtained by that analogy1Under one group of relation, i.e.
Next, it is f gradually to change frequency2,f3......fn, repeating said process can obtain
Measurement：The microwave power unknown for frequency and power, is applied to as time-varying electromagnetic excitation above-mentioned
Magnetic film structure and/or corresponding magneto-dependent sensor device, are applied using the working direct current consistent with during calibration and magnetic field,
Measure the change curve of the measurement resistance with external magnetic field of above-mentioned corresponding magneto-dependent sensor device, i.e. measure under record different magnetic field
The resistance for obtaining, is designated asCompare with the calibration results and be obtained frequency and power.
Embodiment 8：The present embodiment provides a kind of 2 institute of magnetic film structure or embodiment provided using such as embodiment 1
The magneto-dependent sensor device of offer, under the circuit shown in embodiment 3, applies 1 μ A working direct currents, realizes frequency and power
The method of unknown microwave power measurement, step are as follows：
Calibration：To aforementioned magnetic film structure and/or corresponding magneto-dependent sensor device injected frequency f1PowerIt is micro-
Ripple, while applying Constant Direct Current operating current I0, adjust external magnetic field and cause magnetic film structure and/or corresponding magneto-dependent sensor device
First magnetosphere and the second magnetosphere of part is in parallel state, obtains measurement magneto-resistor R ' nowP, keep microwave frequency and work(
Rate and working direct current are constant, change external magnetic field and cause regulation external magnetic field to cause magnetic film structure and/or corresponding magnetosensitive
First magnetosphere and the second magnetosphere of sensor component is in anti-parallel state, obtains measurement magneto-resistor R ' nowAP；According to fixed
Justice obtains measurement magnetic resistivity MR ' nowAP-PAnd record it.For given working direct current and the device measurement magnetoelectricity
Resistance rate is the function of microwave power and frequency, i.e.,Keep frequency f1It is constant, gradually change powerFrequency f can be obtained1, working direct current is I0When, measure magneto-resistor
With changed power relation, it is designated asFurther, it is f gradually to change frequency2,f3......fn, repeating said process can obtainAs shown in the present embodiment Fig. 5.
Measurement：The microwave power unknown for frequency and power, is applied to as time-varying electromagnetic excitation above-mentioned
Magnetic film structure and/or corresponding magneto-dependent sensor device, using the working direct current consistent with during calibration, while applying respectively
Plus external magnetic field is realizing first magnetosphere and the second magnetic of upper described magnetic film structure and/or corresponding magneto-dependent sensor device
Property layer be in parallel state and anti-parallel state, obtain the measurement magnetic resistivity MR ' under unknown microwave excitationAP-P(f,P)；Using known
Attenuation decibel number is P-aAttenuator, (such as 3dB attenuators P-3, it is P by above-mentioned power0The microwave attenuation of dBm is (P0-
3dBm)) by the microwave attenuation of above-mentioned unknown frequency and unknown power be (P0- a) dBm, now, repeating previous step measuring process can
Magnetic resistivity MR ' must be measuredAP-P(f,P-a).Different known attenuation decibel numbers are used instead for P-bAttenuator, can measure in the same manner
Magnetic resistivity MR 'AP-P(f, P-b), by that analogy, the microwave excitation that can obtain the unknown power of unknown frequency is above-mentioned to what is calibrated
Magnetic film structure and/or corresponding magneto-dependent sensor device measurement magnetic resistivity relation Cf, compare with calibration data, you can by
MR′AP-P(f, P) draws microwave power to be measured and frequency.
It should be noted that each embodiment for proposing herein is for the practical application for preferably explaining the present invention, and
Person skilled in the art are allowd using the present invention.But those of ordinary skill in the art are appreciated that above
Description and embodiment be merely to illustrate that and illustrated example.The core content of the present invention includes：There is provided based on this patent
Magnetic film structure and spin rectifying effect, there is provided a kind of to effectively improve magnetic resistivity, modulation output electricity using electromagnetic fiele
The method of pressure window and measurement microwave power；Its core design principle is：Using this patent provide magnetic film structure and
Spin rectifying effect.
Claims (10)
1. a kind of nano-magnetic thin films structure, includes successively：Second magnetosphere, non-magnetosphere and the first magnetosphere；
Characterized in that, first magnetosphere has a fixed magnetisation direction, the second magnetosphere has different initial variable
The direction of magnetization, meanwhile, the first magnetosphere coercivity H 1 and the second magnetosphere coercivity H 2 meet Hc1 ＞ Hc2, the nano-magnetic
Membrane structure has spin rectifying effect.
2. nano-magnetic thin films structure according to claim 1, it is characterised in that
First magnetosphere can be the artificial anti-ferromagnetic structure of ferromagnetic material layers, ferromagnetic material layers and nonmagnetic material layer composition,
Or the direct pinned structure that ferromagnetic material is constituted with antiferromagnetic alloy material, or ferromagnetic material, antiferromagnetic alloy material and non-magnetic
The indirect pinned structure that material is constituted；The artificial anti-ferromagnetic structure refers to FM/NM/FM；
The direct pinning refers to inverse ferric magnetosphere AFM directly and ferromagnetic layer FM contacts constitute AFM/FM structures；Described indirect nail
Bundle refer to inverse ferric magnetosphere and ferromagnetic layer interleave one layer of very thin non-magnetic metal layer constitute AFM/NM/FM structures or,
Insertion composite bed constitutes AFM/FM/NM/FM structures.
3. nano-magnetic thin films structure according to claim 1, it is characterised in that the second magnetosphere can be ferromagnetic material
Layer, the artificial anti-ferromagnetic structure that ferromagnetic material layers are constituted with nonmagnetic material layer,
The artificial anti-ferromagnetic structure refers to FM/NM/FM.
4. a kind of magneto-dependent sensor device, comprising the magnetic film structure as described in any one of claims 1 to 3, its feature exists
In also comprising substrate, cushion and coating；
The cushion is arranged on substrate, and first magnetosphere is arranged on the cushion；The coating is arranged on
On second magnetosphere；
First magnetosphere, the second magnetosphere are turned on two electrode interfaces respectively, respectively the first magnetosphere first electrode,
First magnetosphere second electrode, the second magnetosphere first electrode and the second magnetosphere second electrode.
5. a kind of corresponding magneto-dependent sensor device of magnetic film structure or claim 4 by as described in any one of claims 1 to 3
The method that part magnetic resistivity amplification method and output voltage window are modulated, it is characterised in that apply working direct current
Give the magnetic film structure or corresponding magneto-dependent sensor device -30dBm～20dBm simultaneously, frequency is in 0.1GHz～70GHz
Time-varying electromagnetic excitation.
6. the method for time-varying electromagnetic excitation as claimed in claim 5, it is characterised in that：The mode for realizing time-varying electromagnetic excitation is
Be directly injected into microwave current, or couple the magnetic resonance for producing using microwave magnetic field with the second magnetosphere, or using microwave electric field with
Magnetic resonance caused by the electric field that the effect of second magnetosphere is produced.
7. a kind of corresponding magneto-dependent sensor device of magnetic film structure or claim 4 by as described in any one of claims 1 to 3
Part enters the detection method of microwave power known to line frequency, it is characterised in that comprise the steps of：
Calibration：Under given magnetic field condition, inject in the magnetic film structure or corresponding magneto-dependent sensor device and specify
Know the microwave of the different capacity under frequency, measure the magnitude of voltage between the first magnetosphere and the second magnetosphere, and by the magnitude of voltage
Record is compareed with microwave power；
Measurement：Under identical given magnetic field condition, be input into power microwave to be measured, and measure the first magnetosphere and the second magnetosphere it
Between magnitude of voltage, draw the injection magnetic film structure or corresponding magneto-dependent sensor device using the control record in previous step
The power of the microwave in part.
8. a kind of corresponding magneto-dependent sensor device of magnetic film structure or claim 4 by as described in any one of claims 1 to 3
Part carries out the detection method of the microwave power of unknown frequency, it is characterised in that
Comprise the steps of：
Calibration：Under given magnetic field condition, by measure under different assigned frequencies different capacity microwave magnetic membrane structure or
Corresponding magneto-dependent sensor device magnetic resistivity, obtains different frequency with power and the mapping table of magnetic resistivity；
Measurement：Under identical given magnetic field condition, inject in the magnetic film structure or corresponding magneto-dependent sensor device and treat
Micrometer ripple, and the magnetic resistivity of magnetic film structure or corresponding magneto-dependent sensor device is measured, it is right according to the magnetic resistivity control
Relation table is answered to obtain microwave power to be measured.
9. method as claimed in claim 8, it is characterised in that after injection microwave to be measured, measurement magnetic film structure or corresponding
The method of the magnetic resistivity of magneto-dependent sensor device comprises the steps：
Working direct current I is applied to magnetic film structure or corresponding magneto-dependent sensor device0, for given magnetic field H measurements the
Voltage V ' (H) between two magnetospheres and the first magnetosphere；
It is antiparallel with the first magnetosphere using external magnetic field regulation the second magnetic layer direction, the first magnetosphere is applied
Working direct current I0, voltage V ' between the second magnetosphere of measurement and the first magnetosphereAP；
Calculate real-time magnetic resistivityWherein
10. method as claimed in claim 9, it is characterised in that after injection microwave to be measured, measurement magnetic film structure or corresponding
The method of magneto-dependent sensor device magnetic resistivity comprises the steps：
After measuring the magnetic resistivity MR ' under microwave to be measured, it is P using attenuation decibel number known at least one-aAttenuator will treat
Magnetic film structure or corresponding magneto-dependent sensor device are injected after micrometer wave attenuation, and measures the magneto-resistor of thin magnetic film again
Rate；
Compare mapping table simultaneously to obtain microwave power to be measured and/or frequency simultaneously using the result of multiple measurement.
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