CN105242094A - FM/NM thin-film structure inverse spin hall voltage value measurement method - Google Patents
FM/NM thin-film structure inverse spin hall voltage value measurement method Download PDFInfo
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Abstract
The invention discloses an FM/NM thin-film structure inverse spin hall voltage value measurement method, and belongs to the field of spintronics research and manufacturing of the related spin devices. Voltage of the two ends of a sample is measured at configuration that the film surface is upward and then the film surface is downward by adopting a mode that the sample is vertically overturned in a microstrip line jig based on a method that spin pump-inverse spin hall effect voltage of the FM/NM thin-film structure sample is tested by utilizing a terminal short-circuit suspended microstrip transmission line jig. A spin rectification component and an inverse spin hall effect voltage component in measurement voltage can be accurately obtained by simple calculation according to difference of opposite direction of spin injection in the configuration of the sample so that reference is provided for accurate calculation of a spin hall angle.
Description
Technical field
The invention belongs to spintronics research and dependent spin device fabrication arts, be specifically related to a kind of method based on utilizing the unsettled microstrip transmission line fixture of terminal short circuit to test the spin pumping-inverse logic gates voltage of FM/NM membrane structure sample, adopt the mode of sample flip vertical in microstrip line fixture, successively face straight up and face position shape straight down time measure sample both end voltage, the difference that the direction injected according to spinning in two kinds of sample position shapes is contrary, spin rectification component and inverse logic gates component of voltage accurately can be obtained in measuring voltage by calculating.
Background technology
In spintronics, spin by the carrier stored as information and transmit, therefore, produce, handle and detection spin current is the problem in science of the most fundamental sum most critical realizing spin electric device all the time.Along with the extensive research of people, develop the technology of multiple generation spin current at present, as non-local electrical pumping spin current technology, based on the spin current implantttion technique of the spin pumping effect (SpinPumping) of ferromagnetic resonance, based on the spin current technology of spin Seebeck effect, circularly polarized light is adopted to inject spin current technology.Wherein, ferromagnetic resonance spin method for pumping is by ferromagnetic thin film material (Ferromagnetic, and nonmagnetic film material (Nonmagnetic FM), NM) be deposited on together, ferromagnetic material magnetic moments precession thus inject spin current in nonmagnetic metal when ferromagnetic resonance, due to inverse logic gates (InverseSpinHallEffect, ISHE), namely based on Effect of Spin-orbit Coupling, the contrary electronics that spins deflects to the direction perpendicular to spin current, the displacement of spinning electron forms electric charge stream, thus spin current is converted into electric charge stream in nonmagnetic material, the size of spin current then can be symbolized by detecting sample both end voltage, thus provide foundation and guidance for the Spin Injection Efficiency of further research material structure and spin diffusion length, this being combined by spin pumping effect and inverse logic gates is produced spin current and detects the method for spin current, study frontier and the focus of current spintronics are become.
In addition, choose at the magnetic material of FM/NM membrane structure at present, that Chinese scholars research is more is NiFe, and this is because NiFe has higher magnetic permeability and very low coercive force under weak, middle magnetic field, show good soft magnetic characteristic, be easy to magnetization and demagnetization.In nonmagnetic material, Ta, Pt, Pd etc. have stronger Quantum geometrical phase characteristic, thus can produce larger inverse spin Hall voltage when there being spin to inject.Although closely carried out large quantifier elimination so far, but in the measurement of inverse spin Hall voltage, still there are some difficulties at present, its reason is in FM/NM, when FM layer ferromagnetic resonance, can inject because magnetic moments precession produces spin to NM layer, in NM layer, produce inverse spin Hall voltage V by inverse logic gates
iSHE, also there is spin rectification (SpinRectificationEffect, SRE) voltage V in FM film simultaneously
sRE, so the voltage obtained in measuring is V
iSHEwith V
sREsuperposition.Theoretical research shows, V
iSHEsymmetrical Lorentz line style is presented with external magnetic field change, and V
sREline style then contain the Lorentz line style of symmetric and anti-symmetric.Have part researcher not consider the contribution of spin rectification when testing, or the symmetric Lorentz component in the voltage directly test obtained is summed up as V
iSHEcontribution, and antisymmetric component is summed up as V
sREcontribution, thus cause drawing coarse V
iSHE.Although rotation externally-applied magnetic field, namely change the included angle of the microwave magnetic field h that externally-applied magnetic field H and fixture provide
h, and then according to recording the symmetric and anti-symmetric component of voltage with φ
hthe curve of change, isolates test signal V
iSHEwith V
sREto the contribution of voltage, draw V comparatively accurately
iSHE, but due to the variation tendency of this test curve comparatively complicated, be fit to fitting formula preferably to enable test data, general needs with 10 ° for step-length, rotating 360 degrees measures 36 times, and thus testing procedure is numerous and diverse, and the reliability of test result depends on the quantity of fitting data.
Summary of the invention
In order to overcome the numerous and diverse defect of measuring method out of true and step in background technology, the invention provides the measuring method of inverse spin Hall voltage value in a kind of accurate acquisition FM/NM membrane structure, based on the dependence of two kinds of effects to spin injection direction, utilize the method for the spin pumping-inverse logic gates voltage of the unsettled microstrip transmission line fixture test FM/NM membrane structure sample of terminal short circuit, adopt the mode of sample flip vertical in microstrip line fixture, successively face straight up and face position shape straight down time measure sample both end voltage, the difference that the direction injected according to spinning in two kinds of sample position shapes is contrary, pass through simple computation, just spin rectification component and inverse logic gates component of voltage can accurately be obtained in measuring voltage, for accurate Calculation spin Hall angle provides reference.
In the present invention, the membraneous material of employing is NiFe/Pt; In test fixture, the test fixture that the present invention adopts is a kind of unsettled microstrip transmission line of terminal short circuit.As shown in Figure 1, in this micro-tape test fixture, only need the substrate depositing film to be placed in microstrip line fixture, and load test direct current at sample two ends.Adopt this test fixture, on the one hand, compared to traditional microwave transmission collimation method needing to make insulation course and carry out repeatedly photoetching process, it is simple that the test fixture that the present invention uses prepares sample, directly at produce thin films on substrates, do not need photoetching; On the other hand, compared to the resonance frequency that the frequency of operation of microwave cavity fixture is fixing, test fixture of the present invention at wide frequency range build-in test, can consider the application background of this experiment and the frequency usage scope of instrument and transmission line, so the test frequency adopted is 1 ~ 10GHz.Film dimensions can choose 1mm ~ 10mm along transmission line direction, considering of the enforcement of testing for convenience and test fixture size, the present invention adopts 5mm, is only 1/60 ~ 1/6 of microwave wavelength within the scope of test frequency, can be similar to and think that the microwave magnetic field that film is subject to is uniform.
The present invention is based on the theory of magnetic field angle, propose a kind of flip vertical sample, by changing the relative position of FM and NM layer in fixture, thus only need measure twice, V can be obtained easily and accurately
iSHEvalue size.Based on theory as follows:
For at SiO
2monofilm NiFe sample prepared by substrate, microwave magnetic field
with additional static magnetic field
angle is φ
h, because NiFe is soft magnetic bodies, coercive force is very low, makes when different externally-applied magnetic field direction, magnetic moment
can with
keeping parallelism.The voltage that the rectifying effect that can spin produces:
V
SRE＝A
L·L+A
D·D(1)
In formula, D and L is the coefficient of antisymmetry and symmetrical line style component respectively, A
l, A
dbe respectively the size of symmetrical components and antisymmetric component in this voltage, can φ be expressed as
hfunction:
A
L＝f
1(φ
H)(2)
A
D＝f
2(φ
H)(3)
And for the duplicature Pt/NiFe sample prepared on the SiO2 substrate of same size, the spin rectifying effect of NiFe film not only to be considered, also need the ISHE voltage considering to be produced to Pt injection spin wave by NiFe, can draw:
V
ISHE＝ISHE·sin
3φ
H·L(4)
This magnitude of voltage is the symmetrical line style of Lorentz, therefore, in this sample, records voltage for (1) formula and ISHE and contributes sum, that is:
In above formula, the symmetrical components of revised duplicature sample are
A′
L＝A
L+ISHE′sin
3(φ
H)(6)
It should be noted that in addition by formula
Wherein
γ is gyromagnetic ratio, and e is electronic charge,
for reduced Planck constant,
for the spin current vector injected,
for the unit vector of spin current injection direction, J
sfor spin current size, the symbol that the direction that known spin is injected determines ISHE voltage is positive and negative, illustrates that the direction of spin current is the direction of vertical face.So the spin injection direction of sample P t/NiFe is-y direction, and sample NiFe/Pt's is+y direction.So to be spin current inject to+y direction (6) formula that can set, namely along face normal direction straight up, meanwhile, when spin current injects to-y direction, namely along face normal straight down direction time, then (6) formula can be changed to
A′
L＝A
L-ISHE′sin
3(φ
H)(8)
Now, in (6) and (8) two formulas, inverse spin Hall voltage component ISHE be on the occasion of.
The present invention is as follows about the concrete steps of NiFe/Pt films test method:
(1) by NiFe/Pt/SiO
2sample is placed in microstrip line test fixture, starts test platform, at φ
hthe curve that sample both end voltage changes with additional static magnetic field is tested when being 90 °;
(2) by NiFe/Pt/SiO
2samples vertical is placed in microstrip line test fixture after overturning 180 ° again, and now, film surface is downward, substrate is in the top of thin layer, the interface of substrate and film and the interface of NiFe and Pt remain unchanged, and meanwhile, insert the SiO of a slice same size below sample
2substrate, ensures that film is identical with position height residing in fixture before upset, starts test platform, the curve that test sample both end voltage changes with additional static magnetic field;
(3) after sample upset, spin in film is injected oppositely, causes the curve in step (1) and (2) to present contrary variation tendency, both is added, get final product cancellation ISHE to the contribution margin of voltage, obtain the SRE magnitude of voltage of twice;
(4) by samples vertical overturn after voltage curve deduct upset before, namely the curve obtained in step (2) deducts step (1), then can cancellation SRE to the contribution margin of voltage, obtain the ISHE magnitude of voltage of twice, by the curve after subtracting each other divided by 2, the voltage at peak value place is the twice of ISHE to the maximum contribution value of voltage, by this voltage again divided by 2, can obtain inverse spin Hall voltage V
iSHE.
Especially, the length and width scope of NiFe/Pt film is (5 × 1 ~ 10 × 10mm), and the thickness of NiFe is (10 ~ 50nm), the thickness of Pt is (5 ~ 20nm), SiO
2length and width scope be (5 × 5 ~ 10 × 10mm), SiO
2thickness be (0.2 ~ 0.5mm).
The present invention is based on spin pumping-inverse logic gates, measures under the additional static magnetic field angle of difference, both end voltage during FM/NM membrane structure sample generation ferromagnetic resonance, and then isolates the method for testing of ISHE voltage.This method of testing considers FM layer spin rectifying effect comprehensively and is injected the ISHE produced by spin, and overcome the deviation that the loaded down with trivial details step of conventional test methodologies and formula fitting bring, only need flip vertical sample, upset before with test twice respectively afterwards, obtain spin current injection direction be respectively straight down and straight up time voltage curve, namely obtain ISHE voltage by simple computation.The method is simple and efficient, and takes into full account the contribution that various effect is done voltage, and gained ISHE is comparatively accurate, thus is that the important parameters such as further acquisition accurate spin Hall angle and the related device researching and developing spintronics provide reference.
Accompanying drawing explanation
Fig. 1 is microstrip line fixture schematic diagram, and H is additional static magnetic field, and h is microwave magnetic field, and microwave signal is by the feed-in of SMA port;
Fig. 2 is microwave magnetic field and static magnetic field schematic diagram in pellicular front, and M is the magnetization of NiFe film, j
xand j
zthe microwave current density in x direction and z direction being respectively that sample produces under microwave excitation;
Fig. 3 is test platform schematic diagram, is made up of microwave source, lock-in amplifier, sample and fixture, electromagnet and current source;
Fig. 4 is for measuring sample NiFe at φ
hvoltage when=270 ° and isolated symmetric and anti-symmetric component;
(c) symmetrical components A ' of Fig. 5 NiFe/Pt sample
l(d) antisymmetric component A
dwith φ
hthe curve of change; (e) symmetrical components A ' of Pt/NiFe sample
l(f) antisymmetric component A
dwith φ
hthe curve of change;
Fig. 6 (a) bilayer film NiFe/Pt/SiO
2the position view of sample when measuring voltage; The position view of (b) bilayer film Pt/NiFe/SiO2 sample when measuring voltage; The position view of (c) bilayer film NiFe/Pt/SiO2 sample after flip vertical during measuring voltage; The position shape schematic diagram of (d) bilayer film Pt/NiFe/SiO2 sample after flip vertical during measuring voltage;
Fig. 7 Dark grey dotted line is sample voltage curve V after the flop
1, filled light grey is the voltage curve V of sample before upset
2.For bilayer film NiFe/Pt/SiO
2sample, works as φ
hwhen=90 °, (a) solid black lines is before the sample both end voltage measured after the flop deducts upset with the curve that additional static magnetic field changes; B () solid black lines is before the curve after upset adds upset.For bilayer film Pt/NiFe/SiO2 sample, work as φ
hwhen=270 °, (c) solid black lines is before the sample both end voltage measured after the flop deducts upset with the curve that additional static magnetic field changes; D () solid black lines is before the curve after upset adds upset.
Embodiment
Below by the step in summary of the invention and accompanying drawing, the present invention will be further described:
By growing × wide be that the sample of 10 × 5mm is placed in microstrip line fixture (Fig. 1), and adopt SMB100A (Rohde & Schwarz) as microwave source, the frequency of microwave signal is 4.4GHz, power is 16dBm, and be the square-wave frequency modulation of 10KHz through frequency, meanwhile, what in sample face, apply unique step change within the specific limits is φ with microwave magnetic field
hthe static magnetic field of angle, and adopting SR830 lock-in amplifier (StandardResearchSystem) when accepting 10KHz square wave that microwave source sends as with reference to signal, in detection microstrip line fixture, the voltage produced is encouraged at sample two ends by suffered microwave magnetic field.The size of current linearly proportional relation of the magnetic field size applied due to electromagnet and input, so export the electric current of unique step change within the specific limits to electromagnet by LabVIEW software programming control current source, thus the static magnetic field applied in sample face can be made to change with unique step, simultaneously by lock-in amplifier record sample both end voltage, can draw out the curve that voltage changes with additional static magnetic field, this test platform as shown in Figure 3.By changing φ
hthe size at angle, records the curve that the voltage under different magnetic field direction changes with additional static magnetic field, isolates symmetrical components A through matching
l, antisymmetric component A
d.Such as measure sample NiFe (20nm) at φ
hby the voltages of 270 ° and isolated symmetric and anti-symmetric component as shown in Figure 4, can be obtained by (1) formula matching, A
l=1.098 μ V, A
d=-4.262 μ V.
As shown in Figure 5, the outer electromagnet of rolling clamp makes φ to traditional measurement method
hwith 10 degree for step-length, rotate a circle from 10 degree and be increased to 360 degree, by each φ
htime the voltage that records isolate symmetrical components and antisymmetric component, then make both with φ
hthe curve of change, (a) and (b) is respectively NiFe (20nm)/Pt (10nm)/SiO
2the symmetric and anti-symmetric component of sample is with angle φ
hchange curve, (c) and (d) are respectively Pt (10nm)/NiFe (20nm)/SiO
2the symmetric and anti-symmetric component of sample is with angle φ
hchange curve.Fig. 6 is the schematic diagram of above-mentioned two samples when measuring, and can find out, (a) bilayer film NiFe (20nm)/Pt (10nm)/SiO
2the spin injection direction of sample is-y direction; (b) Pt (10nm)/NiFe (20nm)/SiO
2the spin injection direction of sample is+y direction.Pass through matching, the ISHE=0.852 μ V in NiFe (20nm)/Pt (10nm) sample can be drawn, ISHE=0.423 μ V in Pt (10nm)/NiFe (20nm) sample, the difference of both sizes is because the voltage detection point of two samples is that contact is on NiFe and Pt respectively, Pt conductivity is greater than the conductivity of NiFe, thus causes the magnitude of voltage that Pt (10nm)/NiFe (20nm) sample is measured less than normal.This also too loaded down with trivial details by the method for the test I SHE voltage of formula fitting by the anglec of rotation, and in the process of electromagnet rotation, the magnetic field that sample is subject under each angle not necessarily can be even all the time, also there will be certain deviation during fitting formula.
So this patent adopts a kind of method overturning sample test, when not changing magnetic field angle, by the voltage curve testing gained before samples vertical upset with twice afterwards, through simply subtracting each other, ISHE magnitude of voltage can be drawn.Concrete steps are as follows:
For bilayer film NiFe (20nm)/Pt (10nm)/SiO
2sample, measuring position as shown in Fig. 6 (a), its spin current to-y direction inject, its record voltage with changes of magnetic field curve through separating obtained go out symmetrical components can with (8) formula describe.Now, this samples vertical is overturn, make face downward, meanwhile, for the microwave magnetic field making sample suffered in microstrip line fixture is identical with before additional static magnetic field and Turnover testing, under face, insert the SiO of a slice same size size
2substrate, thus make the relative position of film have identical height with before upset.Measuring position as shown in Fig. 6 (c), its spin current to+y direction inject, its record voltage with changes of magnetic field curve through separating obtained go out symmetrical components can with (6) formula describe.From formula (6) and (8), 90 degree time, ISHE voltage value can reach maximum, before deducting upset with the curve after upset, then obtained curve is V '
iSHE=2 × V
iSHE(H), then
when at ferromagnetic resonance field place, maximal value can be obtained, namely required V
iSHE; If before adding upset with the curve after upset, namely (6) formula adds (8) formula, then obtained curve is V '
sRE=2 × V
sRE(H), the twice of the commutating voltage that namely spins, as shown in Fig. 7 (b).So, based on this model, when only needing test 90 degree, the curve V changed with additional static magnetic field with voltage afterwards before upset
1and V
2, by poor for two voltage curves, then divided by 2, the maximal value of curve obtained be ISHE produce the maximal value of voltage, as shown in Fig. 7 (a), as calculated, at φ
hwhen=90 °, two voltage curves make poor V '
iSHE=1.74 μ V, then V
iSHE=0.87 μ V.
For bilayer film Pt (10nm)/NiFe (20nm)/SiO
2sample, measuring position as shown in Fig. 6 (b), its spin current to+y direction inject, its record voltage with changes of magnetic field curve through separating obtained go out symmetrical components can with (6) formula describe.Now, this samples vertical is overturn, make face straight down, meanwhile, for the microwave magnetic field making sample suffered in microstrip line fixture is identical with before additional static magnetic field and Turnover testing, under face, insert the SiO of a slice same size size
2substrate, thus make the relative position of film have identical height with before upset.Measuring position as shown in Fig. 6 (d), its spin current to-y direction inject, its record voltage with changes of magnetic field curve through separating obtained go out symmetrical components can with (8) formula describe.From formula (6) and (8), 270 degree time, ISHE voltage value can reach maximum, before deducting upset with the curve after upset, then obtained curve is V '
iSHE=2 × V
iSHE(H), then
when at ferromagnetic resonance field place, maximal value can be obtained, namely required V
iSHE; If before adding upset with the curve after upset, namely (6) formula adds (8) formula, then obtained curve is V '
sRE=2 × V
sRE(H), the twice of the commutating voltage that namely spins, as shown in Fig. 7 (d).So, based on this model, when only needing test 270 degree, the curve V changed with additional static magnetic field with voltage afterwards before upset
1and V
2, by poor for two voltage curves, then divided by 2, can to obtain by ISHE produce the maximal value of voltage, as shown in Fig. 7 (c), as calculated, at φ
hwhen=270 °, two voltage curves make poor V '
iSHE=0.862 μ V, then V
iSHE=0.431 μ V.
The method of testing of this patent, the ISHE voltage measurement of general FM/NM/Substrate or NM/FM/Substrate membrane structure sample can also be generalized to, only need flip vertical sample, thus spin injection direction is reversed after sample upset, upset before with test twice respectively afterwards, by poor for two symmetrical components change curves, get final product cancellation spin component of voltage that rectifying effect produces, obtain the twice of inverse spin Hall voltage value, again divided by 2, can obtain by ISHE voltage, and this method of testing is through experimental verification, the result that the method acquired results and the anglec of rotation the method for fitting formula draw is very close, can illustrate, this is a kind of convenient and accurate method of testing obtaining ISHE magnitude of voltage.
Claims (2)
1. the measuring method of inverse spin Hall voltage value in FM/NM membrane structure, comprises the following steps:
(1) by NiFe/Pt/SiO
2sample is placed in microstrip line test fixture, starts test platform, at φ
hthe curve that sample both end voltage changes with additional static magnetic field is tested when being 90 °;
(2) by NiFe/Pt/SiO
2samples vertical is placed in microstrip line test fixture after overturning 180 ° again, and now, film surface is downward, and substrate is in the top of thin layer, and the interface of substrate and film and the interface of NiFe and Pt remain unchanged, and insert the SiO of a slice same size below sample
2substrate, ensures that film is identical with position height residing in fixture before upset, starts test platform, the curve that test sample both end voltage changes with additional static magnetic field;
(3) after sample upset, spin in film is injected oppositely, causes the curve in step (1) and (2) to present contrary variation tendency, both is added, get final product cancellation ISHE to the contribution margin of voltage, obtain the SRE magnitude of voltage of twice;
(4) by samples vertical overturn after voltage curve deduct upset before, namely the curve obtained in step (2) deducts step (1), then can cancellation SRE to the contribution margin of voltage, obtain the ISHE magnitude of voltage of twice, by the curve after subtracting each other divided by 2, the voltage at peak value place is the twice of ISHE to the maximum contribution value of voltage, by this voltage again divided by 2, can obtain inverse spin Hall voltage V
iSHE.
2. the measuring method of inverse spin Hall voltage value in a kind of FM/NM membrane structure as claimed in claim 1, is characterized in that: the thickness of the length and width scope of NiFe/Pt film to be the thickness of 5 × 1 ~ 10 × 10mm, NiFe be 10 ~ 50nm, Pt is 5 ~ 20nm, SiO
2length and width scope be 5 × 5 ~ 10 × 10mm, SiO
2thickness be 0.2 ~ 0.5mm.
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