CN106596653A - 一种三维结构高效有机薄膜传感器器件的制备方法 - Google Patents

一种三维结构高效有机薄膜传感器器件的制备方法 Download PDF

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CN106596653A
CN106596653A CN201611125633.0A CN201611125633A CN106596653A CN 106596653 A CN106596653 A CN 106596653A CN 201611125633 A CN201611125633 A CN 201611125633A CN 106596653 A CN106596653 A CN 106596653A
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cupc
alpha
film sensor
efficient organic
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王丽娟
孙洋
闫闯
张梁
孙丽晶
尹丽
张国军
唐甜甜
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Changchun University of Technology
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    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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Abstract

本发明是一种三维结构高效有机薄膜传感器器件的制备方法,用覆盖氮化硅(Si3N4)绝缘层的PET作柔性衬底,用六联苯(p‑6P)薄膜做诱导层,在诱导层上采用双源同时真空沉积共生长六噻吩(α‑6T)和酞菁铜(CuPc)薄膜,构成共生长有机半导体层,然后真空蒸镀铝叉指电极构成三维结构高效有机薄膜传感器。一方面,由于酞菁铜(CuPc)填补了六噻吩(α‑6T)薄膜的空隙从而增大了薄膜的连续性和完整性;另一方面,由于六噻吩(α‑6T)三维生长特点,α‑6T薄膜部分是一种三维立体结构,测试气体可以与α‑6T薄膜的多个侧面反应,提高了有机薄膜传感器的灵敏度和响应度。

Description

一种三维结构高效有机薄膜传感器器件的制备方法
技术领域
本发明涉及一种三维结构高效有机薄膜传感器制备方法,属于有机半导体技术领域。
背景技术
有机半导体NO2传感器器件结构主要包括基底、半导体和电极。其核心结构为半导体层,为了得到更好性能的传感器器件,获得高有序的有机半导体薄膜仍然是研究的重点。
金属酞菁是一类对NO2气体具有良好的敏感特性的P型有机半导体材料,具有良好的热稳定性和化学稳定性,因此基于酞菁类的有机薄膜传感器在高灵敏度气体探测方面有着极大的应用前景。基于酞菁铜(CuPc)薄膜的OTFT传感器应用于NO2气体检测的报道有很多。多晶CuPc薄膜晶界较多电阻大,不利于气体响应测试。采用弱外延生长方式,半导体层在大面积连续层状生长的诱导层上取向生长,形成规则的连续类单晶薄膜,经外延生长后的有机半导体层基本无晶界势垒,有利于载流子的传输。但由于外延生长的CuPc薄膜较致密,器件不能完全解吸附,导致器件在测试过程中基线向上漂移。噻吩低聚物以六噻吩(α-6T)为代表是迄今发现的空穴迁移率最高的p型有机半导体之一,具有优良的化学稳定性,被广泛地应用在传感器等领域,有很好的应用前景。但α-6T薄膜随厚度的增加噻吩薄膜形貌呈明显分型、且逐渐融合变大,薄膜的连续性也较差。
因此本发明为解决α-6T薄膜的不连续性及CuPc基线漂移的问题,利用α-6T三维尺度生长性和酞菁铜薄膜的横向生长特性,将两者结合起来增大了薄膜的比表面积,构成一种三维结构高效有机薄膜传感器。
发明内容
本发明一种三维结构高效有机薄膜传感器器件的制备方法中,三维结构高效有机薄膜传感器结构如图1,PET柔性衬底(1)上覆盖Si3N4绝缘层(2),厚度不小于300 nm,不大于400 nm。在衬底温度180℃真空下沉积六联苯诱导层(p-6P)(3)厚度不小于4 nm,不大于5nm,室温下在p-6P上双源同时沉积10nm的α-6T薄膜和5nm的CuPc薄膜,构成共生长有机半导体层(4),最后用掩膜版蒸镀铝叉指电极(5)宽度W为98mm,长度为L为0.15mm构成三维结构高效有机薄膜传感器。
在Si3N4绝缘层(2)的PET柔性衬底(1)上用p-6P诱导弱外延α-6T薄膜和CuPc薄膜共生长有机半导体层结构如图2。共生长有机半导体层由无规则交替连接的3种薄膜:α-6T薄膜(6)、α-6T缝隙间的CuPc薄膜(7)以及被CuPc覆盖的α-6T薄膜(8)构成三维立体结构。由于α-6T三维生长特点,α-6T薄膜(6)部分是一种三维立体结构,并用CuPc填补了α-6T薄膜的空隙从而增大了薄膜整体的连续性和完整性。并且,三维特征的α-6T薄膜部分增大了与测试气体接触的面积,即测试气体可以不仅仅与薄膜表面反应,还可以与α-6T薄膜的多个侧面(9~11)反应,可以提高器件的提高传感器的灵敏度和响应度。
附图说明
图1:三维结构高效有机薄膜传感器结构图。
图2:共生长有机半导体层结构示意图。
具体实施方式
一种三维结构高效有机薄膜传感器器件的制备方法具体实现过程:NO2气体(12)可同时与薄膜的三个组成部分发生氧化还原反应。
1.NO2气体(12)与CuPc薄膜表面的反应:作为氧化性气体分子,NO2被酞菁铜分子吸附后,传感器的电导发生变化,表现出对NO2气体的响应表面反应。
2.NO2气体(12)与α-6T薄膜的反应:岛状α-6T薄膜为NO2分子提供了更多的吸附空间和吸附位,NO2分子与α-6T薄膜的多个侧面同时接触反应,增大了反应的比表面积,从而增大了电信号,更有利于提高器件的气敏性能,有利于气体的响应测试。能够应用于低浓度的NO2气体检测,增强了器件的灵敏度。

Claims (5)

1. 一种三维结构高效有机薄膜传感器的制备方法包括:PET柔性衬底(1),绝缘层(2),六联苯诱导层(3),共生长有机半导体层(4),铝叉指电极(5),共生长有机半导体层(4)由六噻吩(α-6T)薄膜(6)、α-6T缝隙间的酞菁铜(CuPc)薄膜(7)以及被CuPc覆盖的α-6T薄膜(8)构成三维立体结构。
2.根据权利要求1所述的一种三维结构高效有机薄膜传感器的制备方法,其特征在于,绝缘层(2)采用氮化硅(Si3N4),厚度不小于300 nm,不大于400 nm。
3.根据权利要求1所述的一种三维结构高效有机薄膜传感器的制备方法,其特征在于,六联苯诱导层(3),180℃衬底温度,厚度不小于4 nm,不大于5 nm。
4.根据权利要求1所述的一种三维结构高效有机薄膜传感器的制备方法,其特征在于,共生长有机半导体层(4),在25 ℃下双源同时沉积生长厚度10 nm的六噻吩(α-6T)薄膜和5nm的酞菁铜(CuPc)薄膜。
5.根据权利要求1所述的一种三维结构高效有机薄膜传感器的制备方法,其特征在于,铝叉指电极(5)宽度W为98 mm,长度L为0.15 mm。
CN201611125633.0A 2016-12-09 2016-12-09 一种三维结构高效有机薄膜传感器器件的制备方法 Pending CN106596653A (zh)

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CN112553895A (zh) * 2021-01-09 2021-03-26 长春工业大学 一种基于聚合物纳米纤维与有机酞菁铜溶液的no2气体传感器的制备方法

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Application publication date: 20170426