CN106596581A - Method for measuring surface morphology to detect internal defects of interlayer of double-layer or multi-layer film - Google Patents
Method for measuring surface morphology to detect internal defects of interlayer of double-layer or multi-layer film Download PDFInfo
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- CN106596581A CN106596581A CN201611016108.5A CN201611016108A CN106596581A CN 106596581 A CN106596581 A CN 106596581A CN 201611016108 A CN201611016108 A CN 201611016108A CN 106596581 A CN106596581 A CN 106596581A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
- G01N2021/8438—Mutilayers
Abstract
The invention discloses a method for measuring surface morphology to detect internal defects of the interlayer of a double-layer or multi-layer film, belonging to the technical fields of microelectronics and microelectronic machinery manufacturing. To overcome the problems of destructive processing, long operation time, high cost and the like in preparation and detection of thin-film devices, microelectronic devices, microelectronic machines and other devices, the invention provides the method for measuring surface morphology to detect internal defects of the interlayer of a double-layer or multi-layer film. The method identifies the positions and sizes of the defects according to morphological changes of the surface of the film before and after ageing, heat cycle or mechanical cycle caused by the internal defects. The method has the characteristics of rapidness, no destruction, instantaneity and low detection cost. When the method is applied to information electronic manufacturing fields like microelectronics and microelectronic machinery, manufacturing cost and testing cost are greatly reduced and quality is improved, so the method has good application prospects in the above fields and in the field of manufacturing of structures of a same kind.
Description
Technical field
The invention belongs to microelectronics and Microelectron-machine technical field, are related to a kind of new defect inspection method,
The method of specifically related to a kind of measurement surface Shape measure bilayer and plural layers inter-layer intra defect.
Background technology
Plural layers are thin-film device in information electronic manufacturing field, microelectronic component, microelectron-mechanical（MEMS）Deng
Basic structure.Be characterized in by double-deck or plural layers and thin substrate by evaporation, sputtering, chemical deposition, spin coating, glue
The technique such as connect to make.Occur tiny flaw in preparation process between film and film for various reasons, such as bubble, delamination, split
Stricture of vagina, slag inclusion, foreign body etc..In order to control the quality of plural layers, it is ensured that the strong bonded of interlayer, need to detect defect at any time
Occur and pattern, with adjusting process at any time；In addition, the reliability to assess device, needs to carry out the survey such as heat ageing, mechanical cycles
Examination, it is also desirable to detect the generation and extension of the internal flaw of interlayer at any time.At present, it is this detection be all it is destructive, for example with
When sampling, section, be then observed on ultramicroscope.This detection method is time-consuming, laborious, and cost is very high.
The content of the invention
In order to need destructiveness in solving the preparation of the devices such as existing thin-film device, microelectronics, microelectron-mechanical, detection process
The problem of processing, time-consuming length, cost height etc., the invention provides a kind of measurement surface Shape measure bilayer and plural layers interlayer
The method of internal flaw, using film surface before and after aging, thermal cycle or mechanical cycles as internal flaw occurs what is caused
The phenomenon of morphology change identifies the position of defect and size.The method has the low spy of quick, lossless, real-time, testing cost
Point, is applied to the information electronic manufacturing field such as microelectronics, microelectron-mechanical, can make manufacturing cost, testing cost significantly
Reduce, quality is improved, has broad application prospects in the manufacture field of these fields and similar structures.
The purpose of the present invention is achieved through the following technical solutions：
A kind of method of measurement surface Shape measure bilayer and plural layers inter-layer intra defect, comprises the steps：
First, detected member is placed on low-temperature heat platform, surface profile measurement device is located above detected member, records quilt
Placement location of the detection piece in low-temperature heat platform；
2nd, the parameters of surface profile measurement device are adjusted and is recorded, detected member is examined in this, as reference parameter
Survey；
3rd, it is room temperature to arrange low-temperature heat platform, measures the surface topography of detected member and records；
4th, low-temperature heat platform heated at constant temperature is set, is measured the surface topography of detected member and is recorded, low temperature is closed after test and is added
Hot platform is allowed to be cooled to room temperature；
5th, time or the number of times of aging, thermal cycle or mechanical cycles test regulation are carried out to detected member；
6th, the detected member after test is placed on the placement location that step one is recorded；
7th, it is room temperature to arrange low-temperature heat platform, detected member is detected and is recorded；
It is identical with the temperature of step 4 that the 8th, low-temperature heat platform heated at constant temperature is set, detected member is detected and is remembered
Record；
9th, the surface topography deformation difference according to four detections in step 3, step 4, step 7, step 8, using computer
Calculated, judged whether the position that defective generation and defect are produced.
Tenth, repeat step three～nine, until completing burn-in test.
Instant invention overcomes the deficiencies in the prior art, it is proposed that a kind of new utilization surface profile measurement device detection is thin
The method of defect under film, the method need not carry out machining and destruction to test specimen, and detect rapid, visual result, also
Thermal cycle experiment, mechanical experiment and detection process can be carried out simultaneously.Compared to prior art, with advantages below effect：
1st, using surface profile measurement device to detected member not damaged.
2nd, detected member need not be destroyed, experimental cost is saved.
3rd, it is swift to operate, low cost.
4th, without using radioactivity x-ray.
5th, it is without the need for ultrasound, swift to operate.
6th, only optical device is capable of achieving, and threshold is low.
7th, low-temperature operation, it is ensured that measurement apparatus degree of accuracy is constant.
8th, detect sightless internal flaw.
Description of the drawings
Principle schematics of the Fig. 1 for Non-Destructive Testing；
Fig. 2 is flawless detected member Cleaning Principle schematic diagram；
Fig. 3 is defective detected member Cleaning Principle schematic diagram；
In figure：1- surface profile measurement devices, 2- low-temperature heat platforms, 3- detected members, 4- computers.
Specific embodiment
Below in conjunction with the accompanying drawings technical scheme is further described, but is not limited thereto, it is every to this
Inventive technique scheme is modified or equivalent, without deviating from the spirit and scope of technical solution of the present invention, all should cover
In protection scope of the present invention.
Specific embodiment one：As shown in figure 1, present embodiments provide for a kind of measurement surface Shape measure is double-deck and many
The device of layer film inter-layer intra defect, the device include surface profile measurement device 1, low-temperature heat platform 2, detected member 3
With computer 4, concrete detecting step is as follows：
First, detected member 3 is placed on low-temperature heat platform 2, surface profile measurement device 1 is located above detected member 3, note
Placement location of the record detected member 3 in low-temperature heat platform；
2nd, the parameters of surface profile measurement device 1 are adjusted and is recorded, detected member 3 is carried out in this, as reference parameter
Detection；
3rd, it is room temperature to arrange low-temperature heat platform 2, measures the surface topography of detected member 3 and records；
The 4th, 2 heated at constant temperature of low-temperature heat platform is set, is measured the surface topography of detected member 3 and is recorded, after test, close low temperature
Heating platform 2 is allowed to be cooled to room temperature；
5th, time or the number of times that the burn-in tests such as aging, thermal cycle or mechanical cycles specify is carried out to detected member 3；
6th, the detected member 3 after test is placed on the placement location that step one is recorded；
7th, it is room temperature to arrange low-temperature heat platform 2, detected member is detected and is recorded, the pattern of detected member 3 under room temperature
As shown in Figure 2；
It is identical with the temperature of step 4 that the 8th, low-temperature heat 3 heated at constant temperature of platform are set, detected member is detected and is remembered
Record, during heating, 3 morphology change of detected member is as shown in Figure 3；
9th, the surface topography deformation difference according to four detections in step 3, step 4, step 7, step 8, using computer
4 are calculated, and judge whether the position that defective generation and defect are produced.
Tenth, repeat step three～nine, until completing the burn-in tests such as thermal cycle, mechanical cycles.
In present embodiment, during the step one is carried out, can demarcate in the ad-hoc location of detected member, to guarantee
The data acquisition region of detection is same position every time.
In present embodiment, during the step one is carried out, the accuracy of temperature control of low-temperature heat platform at 0.1 DEG C, temperature
1 DEG C/s of the rate of heat addition, its operating temperature should be less than the regulation ambient temperature of surface profile measurement device, typically at 40 ~ 50 DEG C.
In present embodiment, during the step 5 is carried out, can be according to the appropriate adjustment measurement ginseng of surface smoothness change
Number.
In present embodiment, during the step 6 is carried out, can put below detected member in equipment claimed range
Heater is put, becomes apparent from by thermal expansion deformation the deformation of blemish surface.
In present embodiment, during the step 3, four, seven and eight are carried out, can be in surface profile measurement device 1 and quilt
Transparent thermal insulation plate is placed between detection piece 3, to protect surface profile measurement device 1, it is ensured that degree of accuracy does not receive ambient temperature shadow
Ring.
In present embodiment, the step 4 and eight carry out during, 2 sustainable heated at constant temperature of low-temperature heat platform,
Pulse excitation heating can be provided.
In present embodiment, the detected member has double-deck and double-deck above thin film.
Operation principle is as follows：
During based on delamination, bubble, crackle occurring between plural layers, the flatness of surface film can be affected, or on surface
Occur raised or sunken.Have a certain degree of deformation to occur when detected member is heated, the deformation of blemish surface thin film,
Raised and depression can then be aggravated so that surface profile measurement device can more easily measure deformation.Therefore, can according to deformation and
Raised degree difference calculates position and the size of defect.
Specific embodiment two：Present embodiments provide for a kind of measurement surface Shape measure bilayer and plural layers interlayer
The method of internal flaw, specific implementation step are as follows：
First, detected member is made up of nickel thin film and substrate；
2nd, measured using optics 3D surface profile measurement devices, its parameters requires as follows：5 times of object lens, 1.76 μ ms
1.76 μm of pixel sizes, 410nm vertical resolutions, 2.2 μm of lateral resolutions, camera lens environment temperature requirement are 45 DEG C；
3rd, detected member is placed on low-temperature heat platform, surface profile measurement device is located above detected member, records quilt
Placement location of the detection piece in low-temperature heat platform；
4th, it is room temperature to arrange low-temperature heat platform, using surface profile measurement measurement device detected member surface 3D patterns；
5th, low-temperature heat platform provides 40 DEG C of heated at constant temperature, using surface profile measurement measurement device detected member surface 3D shapes
Looks；
6th, close low-temperature heat platform to be allowed to be cooled to room temperature；
7th, -50 (1 hours) ~ 150 DEG C of (1 hour) thermal shock experiments are carried out to detected member, is circulated 5 times；
8th, it is room temperature to arrange low-temperature heat platform, detected member is placed on the placement location of step 3 record, is measured tested
Survey the surface topography of part；
9th, low-temperature heat platform is adjusted to 40 DEG C, measure the surface topography of detected member；
Tenth, by computer, the deformation data before and after thermal shock test is carried out into comparing calculation, extrapolates the position of defect and big
It is little.
In present embodiment, specimen material uses nickel thin film, and in actual applications, material can also be other metals
Or nonmetal film.
In present embodiment, the thickness of nickel thin-film material is 20 μm, and in actual applications, the thickness of tested thin film can change
Become.
In present embodiment, baseplate material uses silicon substrate, and in actual applications, measured base plate can also be other
Semiconductor substrate.
In present embodiment, the thickness of baseplate material is 1000 μm, and in actual applications, measured base plate thickness can change
Become.
Claims (5)
1. a kind of measurement surface Shape measure is double-deck and the method for plural layers inter-layer intra defect, it is characterised in that methods described
Step is as follows：
First, detected member is placed on low-temperature heat platform, surface profile measurement device is located above detected member, records quilt
Placement location of the detection piece in low-temperature heat platform；
2nd, the parameters of surface profile measurement device are adjusted and is recorded, detected member is examined in this, as reference parameter
Survey；
3rd, it is room temperature to arrange low-temperature heat platform, measures the surface topography of detected member and records；
4th, low-temperature heat platform heated at constant temperature is set, is measured the surface topography of detected member and is recorded, low temperature is closed after test and is added
Hot platform is allowed to be cooled to room temperature；
5th, time or the number of times of aging, thermal cycle or mechanical cycles test regulation are carried out to detected member；
6th, the detected member after test is placed on the placement location that step one is recorded；
7th, it is room temperature to arrange low-temperature heat platform, detected member is detected and is recorded；
It is identical with the temperature of step 4 that the 8th, low-temperature heat platform heated at constant temperature is set, detected member is detected and is remembered
Record；
9th, the surface topography deformation difference according to four detections in step 3, step 4, step 7, step 8, using computer
Calculated, judged whether the position that defective generation and defect are produced；
Tenth, repeat step three～nine, until completing burn-in test.
2. measurement surface Shape measure according to claim 1 is double-deck and the method for plural layers inter-layer intra defect, its
The accuracy of temperature control of the low-temperature heat platform is characterised by 0.1 DEG C, 1 DEG C/s of heating temperature, operating temperature is 40 ~ 50
℃。
3. measurement surface Shape measure according to claim 1 is double-deck and the method for plural layers inter-layer intra defect, its
During being characterised by that the step 3, four, seven and eight are carried out, place saturating between surface profile measurement device and detected member
Bright heat-insulating shield.
4. measurement surface Shape measure according to claim 1 is double-deck and the method for plural layers inter-layer intra defect, its
Be characterised by the step 4 and eight carry out during, low-temperature heat platform for continue heated at constant temperature or pulse excitation heating.
5. measurement surface Shape measure according to claim 1 is double-deck and the method for plural layers inter-layer intra defect, its
It is characterised by that the detected member has double-deck and double-deck above thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611016108.5A CN106596581B (en) | 2016-11-18 | 2016-11-18 | The method for measuring surface profile measurement plural layers inter-layer intra defect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611016108.5A CN106596581B (en) | 2016-11-18 | 2016-11-18 | The method for measuring surface profile measurement plural layers inter-layer intra defect |
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| CN106596581A true CN106596581A (en) | 2017-04-26 |
| CN106596581B CN106596581B (en) | 2019-04-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI765233B (en) * | 2019-05-15 | 2022-05-21 | 大陸商上海新昇半導體科技有限公司 | Evaluation method for bubble number in binding silicon wafers and manufacturing method of image sensor structure |
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| JPH04335146A (en) * | 1991-05-10 | 1992-11-24 | Furukawa Electric Co Ltd:The | Method for detecting surface detect of water-stopping type rubber/plastic insulation power cable water-stopping layer |
| CN1183640A (en) * | 1996-11-21 | 1998-06-03 | 日本电气株式会社 | Semiconductor device and method of testing the same |
| CN1806158A (en) * | 2003-06-13 | 2006-07-19 | 株式会社荏原制作所 | Measuring apparatus |
| CN1988770A (en) * | 2005-12-22 | 2007-06-27 | 株式会社东芝 | Substrate inspection method, printed-wiring board, and electronic circuit device |
| WO2013161912A1 (en) * | 2012-04-27 | 2013-10-31 | 株式会社日立ハイテクノロジーズ | Defect inspection device and defect inspection method |
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2016
- 2016-11-18 CN CN201611016108.5A patent/CN106596581B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04335146A (en) * | 1991-05-10 | 1992-11-24 | Furukawa Electric Co Ltd:The | Method for detecting surface detect of water-stopping type rubber/plastic insulation power cable water-stopping layer |
| CN1183640A (en) * | 1996-11-21 | 1998-06-03 | 日本电气株式会社 | Semiconductor device and method of testing the same |
| CN1806158A (en) * | 2003-06-13 | 2006-07-19 | 株式会社荏原制作所 | Measuring apparatus |
| CN1988770A (en) * | 2005-12-22 | 2007-06-27 | 株式会社东芝 | Substrate inspection method, printed-wiring board, and electronic circuit device |
| WO2013161912A1 (en) * | 2012-04-27 | 2013-10-31 | 株式会社日立ハイテクノロジーズ | Defect inspection device and defect inspection method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI765233B (en) * | 2019-05-15 | 2022-05-21 | 大陸商上海新昇半導體科技有限公司 | Evaluation method for bubble number in binding silicon wafers and manufacturing method of image sensor structure |
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| CN106596581B (en) | 2019-04-30 |
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