CN106596451A - Method for producing light source of non dispersive infrared spectrum gas analyzer - Google Patents
Method for producing light source of non dispersive infrared spectrum gas analyzer Download PDFInfo
- Publication number
- CN106596451A CN106596451A CN201611217635.2A CN201611217635A CN106596451A CN 106596451 A CN106596451 A CN 106596451A CN 201611217635 A CN201611217635 A CN 201611217635A CN 106596451 A CN106596451 A CN 106596451A
- Authority
- CN
- China
- Prior art keywords
- light source
- thin film
- chip
- platinum
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002329 infrared spectrum Methods 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 claims abstract description 42
- 238000002360 preparation method Methods 0.000 claims abstract description 15
- 238000001228 spectrum Methods 0.000 claims abstract description 12
- 238000012545 processing Methods 0.000 claims abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 60
- 239000010409 thin film Substances 0.000 claims description 54
- 239000010408 film Substances 0.000 claims description 33
- 229910052697 platinum Inorganic materials 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 21
- 238000003466 welding Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 238000009396 hybridization Methods 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000004062 sedimentation Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 27
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000012544 monitoring process Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 4
- 231100000331 toxic Toxicity 0.000 abstract description 3
- 230000002588 toxic effect Effects 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000004044 response Effects 0.000 description 7
- 238000004611 spectroscopical analysis Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 206010030113 Oedema Diseases 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 208000035475 disorder Diseases 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229960002415 trichloroethylene Drugs 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06186—Resistance heated; wire sources; lamelle sources
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a method for producing a light source of a non dispersive infrared spectrum gas analyzer, and the method comprises preparation of a thermal insulating film, preparation of an electrode pad film, preparation of a thermal resistance film, preparation of a light source chip, integration of the light source chip and a light source signal processing circuit and preparation of the light source. The method aims at the technical problems of poor system signal noise ratio and low detection sensitivity for the reason that a spectrum gas analyzer in the prior art can only work in a low frequency, the light source prepared by the method can work in the condition of a high frequency, can be used in design and production of anon dispersive gas analyzer based on the principle of spectrum absorption, and further can be used in field of online monitoring of toxic and harmful gases.
Description
Technical field
The present invention relates to a kind of light source preparation method of on-dispersive type infrared spectrum gas analyser, belongs to light source and makes neck
Domain.
Background technology
Toxic and harmful analyser based on spectrographic method is mainly used at present industry, agricultural, medical treatment, intelligence
The industries such as energy building, analytical tool are used for the high accuracy of gas concentration and survey, and are such as used in pollutant monitoring, tailstock edema caused by disorder of QI
Analysis, gas and combustible gas detection, gas composition analysis, medical monitoring device, air quality analysis, elementary analysiss instrument etc. are led
Domain.Spectroscopy gas analyser is a kind of instrument of measure spectra Absorption spectra, and the instrument of this type is required for launch continuous
The light source of spectral radiance and sensitive spectroscopic detector.
One of core devices of spectroscopy gas analyser are spectroscopic detectors.In general, pyroelectric detector is red
The preferable selection of spectroscopic detector in the development of external spectrum method gas analyser.The sensitivity of pyroelectric detector and response frequency it
Between relation it is very complicated, it is not a simple linear relationship or can be described with a simple equation.Typically
Ground says that to improve sensitivity will sacrifice response frequency, and improving response frequency, then to reduce the time of integration sensitive so as to lose
Degree.However, being not that relation on all of frequency band between device sensitivity and response frequency all follows such rule.
Complex physical problem is forgiven in the middle of this.Pyroelectric detector has two types, and a kind of is film type, with thin film material
Expect for light-sensitive material, frequency band when its device voltage responsiveness reaches maximum is typically in 10Hz-100Hz；Another kind is pottery
Porcelain type, with ceramic material as light-sensitive material, frequency band when its device voltage responsiveness reaches maximum is typically in 0.1Hz-
1Hz.But either which kind of type, its noise and frequency are all related, and in low frequency, noise is very big, and the noise in high frequency
Very big, it is very big that this is primarily due to white noise during low frequency.It is to pursue larger voltage in the design of spectroscopy gas analyser
Signal, when answering selector voltage responsibility to reach maximum or its adnexa frequency as pyroelectric detector work frequency
Rate, this frequency is actually the modulating frequency that electric ac modulation is carried out to light source.It is obvious that the modulating frequency of light source is set
Meter selects film type pyroelectric detector to be that spectroscopic detector will make system obtain maximum signal to noise ratio, while also in high band
Optimal detection sensitivity will be obtained.The precondition for realizing this design is exactly that light source will have response frequency faster.
The two of the core devices of spectroscopy gas analyser are the light sources that can launch continuous radiation.Light source is by adding
A kind of inert solid of heat produces radiation.The temperature of hot solid is generally 1500～2200K, maximum radiant intensity 5000～
Between 5900cm-1.Mainly there are siliconits and Nernst glower in the more practical infrared light supply of middle infrared at present.Siliconits are by carbon
SiClx sintering is formed.Its radiation intensity distribution deflection long wave, operating temperature is generally 1300～1500K.Because carborundum has liter
Magnificent phenomenon, using temperature is too high the life-span of carborundum will be shortened, and can pollute neighbouring dyeing mirror.Siliconits light-emitting area is big,
Low price, it is easy to operate, using wave-length coverage compared with Nernst glower width.Nernst glower mainly by mix rare earth metal (zirconium,
Thorium, cerium) oxide makes.It has negative temperature-coefficient of electrical resistance, is at room temperature non-conductor, when temperature is increased to about 500 DEG C
During the above, it is changed into quasiconductor, when more than 700 DEG C, just becomes conductor.Therefore Nernst glower is lighted, is needed in advance its is pre-
Heat is to 700 DEG C.Its operating temperature is typically at 1750 DEG C.Nernst glower service life is longer, and good stability is used in short wave ranges
It is more favourable than siliconits.But its is expensive, operate be not as convenient as siliconits.In 50 μm of far red light areas of λ ＞, need using high
Pressure mercury lamp.Tengsten lamp is generally adopted in the near-infrared region of 20000～8000cm-1.In the concentration for monitoring some atmosphere pollutions
With the absorbing material determined in aqueous solution (such as：Ammonia, butadiene, benzene, ethanol, nitrogen dioxide and trichloro ethylene etc.) when, can adopt
With adjustable carbon dioxide laser light source.Its radiant intensity several orders of magnitude bigger than blackbody source.Above light source is due to volume
It is larger and price is higher, in can be only applied to the spectrum analyses of laboratory.
At present the spectroscopy gas analyser of on-line monitoring is typically with the common microminiature bulb with tungsten filament as heater
As light source.The advantage of this light source is low cost, but technically has the too long of shortcoming of response time, and it is in higher modulation
The spectral energy exported under frequency is too low, can only work under low frequency modulations, it is impossible to the spectrum inspection that can be worked in high frequency
Survey device such as film type pyroelectric detector to use cooperatively to reach optimal signal to noise ratio, so that the inspection of spectroscopy gas analyser
Survey sensitivity to be difficult to get a promotion.
The content of the invention
In order to solve spectroscopy gas analyser present in prior art can only work at low frequency institute caused by a system
The technical problem that noise is poor and detection sensitivity is relatively low, the present invention proposes a kind of on-dispersive type infrared spectrum gas analyses
The light source preparation method of instrument can be worked using the light source that the method makes under high frequency condition, can be based on Spectrum Absorption Principle
On-dispersive type gas analyser design and used in making, and then answered in the on-line monitoring field of toxic and harmful
With.
A kind of light source preparation method of on-dispersive type infrared spectrum gas analyser proposed by the present invention, the method is as follows
What step was realized：
Step one：Heat insulation thin film is prepared on the single crystal silicon substrate for crossing silicon dioxide insulator thin film；
The porous that prepare one layer inorganic-organic hybridization has been coated with the single crystal silicon substrate of silicon dioxide insulator thin film on surface
SiO2Thin film, the area of described single crystal silicon substrate can be Φ 10mm- Φ 100mm, the porous of the inorganic-organic hybridization of preparation
SiO2Film thickness is 2 μm -6 μm.
Step 2：Electrode pressure welding block is prepared on heat insulation thin film；
Using many target direct current magnetron sputtering process inorganic-organic hybridization porous SiO2Platinum/titanium is prepared on thin film thin
Film simultaneously adopts positive glue stripping method according to the patent of Application No. 200510010975.3：A kind of Pt/Ti metal membrane patterning technique
Described method is completed graphically；Wherein, the size dimension of each light source chip determines according to actual needs,
The thickness of the platinum/platinum/titanium metal thin film is 100nm-1000nm, and size dimension is in the range of Φ 0.5mm- Φ 2mm.
Step 3：On heat insulation thin film between two electrode pressure welding blocks, amorphous carbon or carborundum films conduct are prepared
Heat resistive film, and completed graphically using dry and wet etch；
Carborundum films are prepared as heat on platinum/platinum/titanium metal thin film using plasma-reinforced chemical sedimentation (PECVD)
Resistance thin film is simultaneously completed graphically using dry and wet etch, and the thickness of described heat resistive film is 300nm-1000nm；Carbon
SiClx heat resistive film thickness is 800nm, this thin film two ends connection electrode, meanwhile, the thin film it is graphical after in continuous bow word
Shape, the line thickness for bending font is 100-200 μm, and the gap between adjacent parallel wales is 10-50 μm.
Step 4：Scribing is carried out to light source chip, the light source chip after scribing is connected with process circuit and is packaged；
Using scribing machine, knife completes scribing under the intersection of each light source chip, from the silicon chip of full wafer 20mm × 20mm
16 same sheet laser chips are obtained, and completes the welding between one end of chip link and chip pressure welding block.
Chip is bonded together with signal processing circuit board, and completes the other end and and letter benefit reason of chip link
The welding of circuit board leads, obtains light source chip component.
The shell encapsulation of light source chip component, band spectrum window and base is completed into the making of light source.
The invention has the beneficial effects as follows：
1st, the present invention is generated heat using amorphous carbon or carborundum films as heat resistive film material after electric current, generation
Spectral radiance.There is its thermal resistance material characteristic high emissivity to work under continuous operation mode and pulse mode, can meet
Spectrum sends out performance requirement of the gas analyser to light source.
2nd, the present invention prepares heat resistive film using amorphous carbon or carborundum films as heat resistive film using silicon planner technology
Chip, with very low hot residence characteristics, makes it when high-frequency impulse works, and quick can must heat and cool down, quick response, light
Source can be performed for more than the modulation (30Hz modulating frequencies are in 50% dutycycle) of 100Hz, be conducive to sending out gas analyser in spectrum
The characteristics of low noise under senior engineer's working frequency being played in development.
Description of the drawings
Fig. 1 is for the light source preparation flow figure of on-dispersive type spectroscopic gas analyser；
Fig. 2 is that heat insulation thin film prepares schematic diagram in embodiment；
Fig. 3 is that light source cell electrode pressure welding block thin film prepares schematic diagram in embodiment；
Fig. 4 is that heat resistive film prepares schematic diagram in embodiment.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention will be described in detail.
A kind of light source preparation method of on-dispersive type infrared spectrum gas analyser, as described in Figure 1, the concrete party of realization
The step of method is realized is as follows：
Step one：Heat insulation thin film is prepared on the single crystal silicon substrate for crossing silicon dioxide insulator thin film；
The porous that prepare one layer inorganic-organic hybridization has been coated with the single crystal silicon substrate of silicon dioxide insulator thin film on surface
SiO2Thin film, the area of described single crystal silicon substrate can be Φ 10mm- Φ 100mm, the porous of the inorganic-organic hybridization of preparation
SiO2 film thicknesses are 2 μm -6 μm.
In the present embodiment, it is 20mm × 20mm to take one piece of area, and surface is coated with 1 μ m thick silicon dioxide insulator thin film,
Crystal orientation is《100》The thickness in direction is 300 μm of silicon single crystal matrix.1 μ m thick SiO is coated with it2Insulation film that
Porous SiO of the inorganic-organic hybridization that a layer thickness is 3 μm is prepared in layer surface2Thin film, as shown in Figure 2.
Step 2：Electrode pressure welding block is prepared on heat insulation thin film；
Using many target direct current magnetron sputtering process inorganic-organic hybridization porous SiO2Platinum/titanium is prepared on thin film thin
Film simultaneously adopts positive glue stripping method according to the patent of Application No. 200510010975.3：A kind of Pt/Ti metal membrane patterning technique
Described method is completed graphically；Wherein, the size dimension of each light source chip determines according to actual needs,
The thickness of the platinum/platinum/titanium metal thin film is 100nm-1000nm, and size dimension is in the range of Φ 0.5mm- Φ 2mm；
In the present embodiment, using many target direct current magnetron sputtering process, in the porous sio2 for preparing inorganic-organic hybridization
It is a unit by area 5mm × 5mm on the silicon single crystal flake of thin film, in its upper left corner and the lower right corner 1 electrode pressure welding is respectively prepared
Block (i.e. platinum/titanium) thin film, thickness is 800nm, and size is 1mm × 1mm.
Platinum/platinum/titanium metal thin film graphically using positive glue stripping method according to patent：A kind of Pt/Ti metal membrane patterning skill
Art (the patent No.：ZL 200510010975.3) described in method complete graphically.Electrode pressure welding block thin film is that platinum/titanium is thin
The thickness of film is 800nm, and its size dimension is 1mm × 1mm.The size dimension of each light source chip is 5mm × 5mm, each
The figure of the electrode pressure welding block thin film of the light source chip of individual unit is as shown in Figure 3.
Wherein many target direct current magnetron sputtering process grow the process conditions such as table 1 of platinum/platinum/titanium metal thin film：
Table 1：Many target direct current magnetron sputtering process grow platinum/platinum/titanium metal thin film process conditions
| Power | Target size | Carrier gas | Target-substrate distance | The pre-sputtering time | Growth time | |
| Titanium target | 80W | Φ60mm | Argon | 70mm | 60s | 30s |
| Platinum target | 80W | Φ60mm | Argon | 70mm | 60s | 120s |
The slice, thin piece after platinum/platinum/titanium metal thin film prepares and be graphical will be completed to be put in quick anneal oven, and by such as table 2 below
Described process conditions carry out heat treatment：
Table 2：Platinum:/ platinum/titanium metal thin film heat treatment condition
| Heating rate | Annealing temperature | Temperature retention time |
| 50℃/s | 550℃ | 300s |
Step 3：On heat insulation thin film between two electrode pressure welding blocks, amorphous carbon or carborundum films conduct are prepared
Heat resistive film, and completed graphically using dry and wet etch；
Carborundum films are prepared as heat on platinum/platinum/titanium metal thin film using plasma-reinforced chemical sedimentation (PECVD)
Resistance thin film is simultaneously completed graphically using dry and wet etch, and the thickness of described heat resistive film is 300nm-1000nm；Carbon
SiClx heat resistive film thickness is 800nm, this thin film two ends connection electrode, meanwhile, the thin film it is graphical after in continuous bow word
Shape, the line thickness for bending font is 100-200 μm, and the gap between adjacent parallel wales is 10-50 μm.
The wherein process conditions of plasma-reinforced chemical sedimentation (PECVD) growing silicon carbide film such as table 3：
Table 3:Plasma-reinforced chemical sedimentation (PECVD) growing silicon carbide film process conditions
| Carrier gas | Power | Working gas 1 | Working gas 2 | Growth time |
| Argon | 300W | Silane SiH4 | Methane CH4 | 2 hours |
The removal technique of the carborundum films in the patterning process of carborundum films sends out etching method (reactive ion using dry
Etching method)：Its process conditions such as table 4：
Table 4：Reactive ion etching method removes carborundum films process conditions
| Carrier gas | Power | Reacting gas | Etch period |
| Argon | 200W | Sulfur hexafluoride SF6 | 1 hour |
Step 4：Scribing is carried out to light source chip, the light source chip after scribing is connected with process circuit and is packaged；
Using scribing machine, knife completes scribing under the intersection of each light source chip, from the silicon chip of full wafer 20mm × 20mm
16 same sheet laser chips are obtained, and complete the welding between one end of chip link and chip pressure welding block,
Chip is bonded together with signal processing circuit board, and completes the other end and and letter benefit reason of chip link
The welding of circuit board leads, obtains light source chip component, is by the shell encapsulation of light source chip component, band spectrum window and base
Complete the making of light source.
The ultimate principle and principal character and advantages of the present invention of the present invention has been shown and described above.The technology of the industry
Personnel it should be appreciated that the present invention is not restricted to the described embodiments, the simply explanation described in above-described embodiment and description this
The principle of invention, without departing from the spirit and scope of the present invention, the present invention also has various changes and modifications, these changes
Change and improvement is both fallen within scope of the claimed invention.The claimed scope of the invention by appending claims and its
Equivalent thereof.
Claims (1)
1. a kind of light source preparation method of on-dispersive type infrared spectrum gas analyser, the method is the steps of what is realized：
Step one：Heat insulation thin film is prepared on the single crystal silicon substrate for crossing silicon dioxide insulator thin film；
The porous sio2 that prepare one layer inorganic-organic hybridization has been coated with the single crystal silicon substrate of silicon dioxide insulator thin film on surface
Thin film, the area of described single crystal silicon substrate can be Φ 10mm- Φ 100mm, and the porous sio2 of the inorganic-organic hybridization of preparation is thin
Film thickness is 2 μm -6 μm.
Step 2：Electrode pressure welding block is prepared on heat insulation thin film；
Platinum/platinum/titanium metal thin film is prepared using many target direct current magnetron sputtering process simultaneously on the porous sio2 thin film of inorganic-organic hybridization
Using positive glue stripping method according to Application No. 200510010975.3 patent：Described in a kind of Pt/Ti metal membrane patterning technique
Method complete graphically；Wherein, the size dimension of each light source chip determines according to actual needs,
The thickness of the platinum/platinum/titanium metal thin film is 100nm-1000nm, and size dimension is in the range of Φ 0.5mm- Φ 2mm；
Step 3：On heat insulation thin film between two electrode pressure welding blocks, amorphous carbon or carborundum films are prepared as thermal resistance
Thin film, and completed graphically using dry and wet etch；
Carborundum films are prepared on platinum/platinum/titanium metal thin film using plasma-reinforced chemical sedimentation (PECVD) thin as thermal resistance
Film is simultaneously completed graphically using dry and wet etch, and the thickness of described heat resistive film is 300nm-1000nm；Carborundum
Heat resistive film thickness is 800nm, this thin film two ends connection electrode, meanwhile, the thin film it is graphical after in continuous bow font, bow
The line thickness of font is 100-200 μm, and the gap between adjacent parallel wales is 10-50 μm；
Step 4：Scribing is carried out to light source chip, the light source chip after scribing is connected with process circuit and is packaged；
Using scribing machine, knife completes scribing under the intersection of each light source chip, obtains from the silicon chip of full wafer 20mm × 20mm
16 same sheet laser chips, and complete the welding between one end of chip link and chip pressure welding block；
Chip is bonded together with signal processing circuit board, and complete the other end of chip link with and believed process circuit
The welding of plate lead, obtains light source chip component, and the shell encapsulation of light source chip component, band spectrum window and base is completed
The making of light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611217635.2A CN106596451A (en) | 2016-12-26 | 2016-12-26 | Method for producing light source of non dispersive infrared spectrum gas analyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611217635.2A CN106596451A (en) | 2016-12-26 | 2016-12-26 | Method for producing light source of non dispersive infrared spectrum gas analyzer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106596451A true CN106596451A (en) | 2017-04-26 |
Family
ID=58604170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611217635.2A Pending CN106596451A (en) | 2016-12-26 | 2016-12-26 | Method for producing light source of non dispersive infrared spectrum gas analyzer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106596451A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799206A (en) * | 2019-03-08 | 2019-05-24 | 上海大学 | A kind of overstepping one's bounds light type infrared gas sensor and its method of operation |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202165999U (en) * | 2011-03-09 | 2012-03-14 | 李小玲 | LED (Light-emitting Diode) light source with beautifying and lighting functions |
| CN102621109A (en) * | 2012-03-06 | 2012-08-01 | 昆明斯派特光谱科技有限责任公司 | Light source preparation method for nondispersive spectrum gas analysis instrument |
| CN103700654A (en) * | 2013-12-20 | 2014-04-02 | 纳晶科技股份有限公司 | LED (Light-Emitting Diode) based on COB (Chip On Board) package and manufacturing method thereof |
-
2016
- 2016-12-26 CN CN201611217635.2A patent/CN106596451A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202165999U (en) * | 2011-03-09 | 2012-03-14 | 李小玲 | LED (Light-emitting Diode) light source with beautifying and lighting functions |
| CN102621109A (en) * | 2012-03-06 | 2012-08-01 | 昆明斯派特光谱科技有限责任公司 | Light source preparation method for nondispersive spectrum gas analysis instrument |
| CN103700654A (en) * | 2013-12-20 | 2014-04-02 | 纳晶科技股份有限公司 | LED (Light-Emitting Diode) based on COB (Chip On Board) package and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799206A (en) * | 2019-03-08 | 2019-05-24 | 上海大学 | A kind of overstepping one's bounds light type infrared gas sensor and its method of operation |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101929968B (en) | Device for measuring thermal diffusivity | |
| US9453334B2 (en) | Method and device for producing a low-emissivity layer system | |
| CN105987935B (en) | MEMS gas sensor and preparation method thereof | |
| JP4576582B2 (en) | Thermoelectric gas sensor with microelements | |
| KR101734329B1 (en) | Method for detecting chemical substances using impedance analysis | |
| CN102338809A (en) | Method and device for airflow electricity generation and flow speed measurement based on graphene | |
| KR20090065472A (en) | Deposition apparatus and deposition method | |
| CN105624778A (en) | Method for quickly and continuously preparing large-crystal-domain graphene film | |
| CN104241074A (en) | Photo ionization mass spectrum device used for detecting products of laser heating reactor in situ | |
| CN106596451A (en) | Method for producing light source of non dispersive infrared spectrum gas analyzer | |
| CN105648403A (en) | MoS2/Cu nanometer particle SERS substrate and preparing method thereof | |
| CN113791048A (en) | MEMS infrared light source and preparation method thereof | |
| JP2023520824A (en) | Multi-dimensional multi-parameter gas sensor, manufacturing method thereof, and gas detection method | |
| KR101759176B1 (en) | Method for detecting chemical substances using impedance analysis | |
| CN117074790A (en) | High-temperature broadband wave-transmitting rate test measurement device for arc wind tunnel wave-transmitting material | |
| CN108630783A (en) | A kind of preparation method of the photoelectric detector based on diamond | |
| CN102621109A (en) | Light source preparation method for nondispersive spectrum gas analysis instrument | |
| CN203300611U (en) | Dry etching device lower electrode and dry etching device | |
| CN101261156B (en) | Ultraviolet detector | |
| CN105445312A (en) | Micro-region heating device | |
| Dai et al. | Voltage driven chemiresistor with ultralow power consumption based on self-heating bridged WO 3 nanowires | |
| CN111689459B (en) | Gas sensor chip structure based on calcium silicate substrate and preparation method | |
| TWI727275B (en) | Photoelectric detector and method for photoelectric conversion | |
| CN209541901U (en) | Thermopile structure in novel high-power laser detector | |
| CN114910185A (en) | Indium tin oxide high-temperature thin film sensor combining laser pyrolysis with Versenberg direct writing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170426 |