CN106595852A - 基于氧化锌石墨烯功能复合纳米材料的可见光探测系统 - Google Patents
基于氧化锌石墨烯功能复合纳米材料的可见光探测系统 Download PDFInfo
- Publication number
- CN106595852A CN106595852A CN201610912638.1A CN201610912638A CN106595852A CN 106595852 A CN106595852 A CN 106595852A CN 201610912638 A CN201610912638 A CN 201610912638A CN 106595852 A CN106595852 A CN 106595852A
- Authority
- CN
- China
- Prior art keywords
- visible light
- detector
- solution
- electrode
- system based
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 20
- 239000002131 composite material Substances 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 title abstract description 10
- 238000001514 detection method Methods 0.000 title abstract description 6
- 229960001296 zinc oxide Drugs 0.000 title abstract 3
- 239000002070 nanowire Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000012360 testing method Methods 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 239000002086 nanomaterial Substances 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000002096 quantum dot Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000013019 agitation Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract 1
- 230000002195 synergetic effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000010748 Photoabsorption Effects 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0295—Constructional arrangements for removing other types of optical noise or for performing calibration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Abstract
本发明提供了一种基于氧化锌石墨烯功能复合纳米材料的可见光探测系统,其特征在于,包括带有电极的探测器,ZnO纳米线溶液沉积在电极上并经过干燥,高精度半导体测试仪的正负极与电极相连,在测试过程中,通过设定一定的工作电压来记录探测器的电阻变化,在探测器的上方设有可见光光源,可见光光源与探测器之间的距离可调从而得到不同强度的光强。本发明通过与石墨烯材料的复合,在保持了独立材料的性质的基础上,又具有各组分协同作用所产生的综合性能,来提高和改善氧化锌基器件的光响应行为。
Description
技术领域
本发明涉及一种光电探测器的测试系统。
背景技术
纳米氧化锌由于具有表面与界面效应、量子尺寸效应和宏观量子隧道效应等,使其呈现出优异的电、磁、光等性能,相比于GaN、SiC等宽带隙材料,具有化学稳定性好和热稳定性好、抗辐照能力高、生长温度低使用寿命长等,在紫外探测器探测器等方面也有着广泛的应用。目前已有基于单一的ZnO纳米材料来制备紫外探测器,大多是通过一定的工艺沉积在衬底上的ZnO薄膜然后制作成仅限于紫外范围有限的光电探测器。
由于纯氧化锌纳米材料光生电子空穴对的高复合率以及表面缺陷严重影响了光响应的效率并制约了它的应用,而且紫外探测光探测的波长范围很有限。
发明内容
本发明的目的是:设计与建立可见光照下基于纯氧化锌纳米材料的光电探测器的测试体系。
为了达到上述目的,本发明的技术方案是提供了一种基于氧化锌石墨烯功能复合纳米材料的可见光探测系统,其特征在于,包括带有电极的探测器,ZnO纳米线溶液沉积在电极上并经过干燥,高精度半导体测试仪的正负极与电极相连,在测试过程中,通过设定一定的工作电压来记录探测器的电阻变化,在探测器的上方设有可见光光源,可见光光源与探测器之间的距离可调从而得到不同强度的光强。
优选地,在所述电极上沉积ZnO纳米线溶液包括以下步骤:
将ZnO纳米线溶于去离子水中配置成溶液,取石墨烯量子点溶液滴入上述溶液中,并对其磁力搅拌一小时,得到分散性很好的ZnO纳米线悬溶液,用微量调节注射器取ZnO纳米线悬溶液沉积在所述电极(1)上,最后放于烘箱中进行干燥。
优选地,所述ZnO纳米线在溶液中的浓度为5~6mol/l。
优选地,所述溶液与所述石墨烯量子点溶液的摩尔比为(20∶1)~(25∶1)。
优选地,在所述可见光光源与所述探测器之间设有用于滤去紫光的玻璃或仅让特定光通过的滤光片。
本发明通过与石墨烯材料的复合,在保持了独立材料的性质的基础上,又具有各组分协同作用所产生的综合性能,来提高和改善氧化锌基器件的光响应行为。将可见光源引入实验中,能达到滤光片更换能够并实现可见光范围类基于氧化锌石墨烯功能复合纳米材料器件的光响应探测系统。
本发明具有如下优点:
1、通过纯氧化锌纳米材料与石墨烯材料的复合材料在保持了独立材料的性质的基础上具有各组分协同作用所产生的综合性能,改善光响应效率。
2、将可见光源引入实验中,通过有效的实验搭建探测在可见光区域类的光响应性能,能通过滤光片更换实现可见光范围类基于氧化锌与石墨烯功能复合纳米材料器件的响应探测系统。
附图说明
图1为本发明的体系示意图。
具体实施方式
为使本发明更明显易懂,兹以优选实施例作详细说明如下。
结合图1,在本发明提供的一种基于氧化锌石墨烯功能复合纳米材料的可见光探测系统中,先采用化学气相沉积法将ZnO纳米线附着在电极1上,具体步骤为:取ZnO纳米线溶于去离子水中配置成溶液,ZnO纳米线的浓度为5mol/1,再取一定量的石墨烯量子点溶液滴入上述溶液中,石墨烯量子点溶液与上述制备得到的溶液的摩尔比为1∶25,可以看到溶液颜色加深,进一步对其磁力搅拌一小时,得到分散性很好的悬溶液。用微量调节注射器取制备得到的悬溶液沉积在金属电极上,最后放于烘箱中进行干燥。
随后,将带有电极1的探测器2与高精度半导体测试仪3的正负极两端相连,它的电信号通过高精度半导体测试仪3(Agilent 4156C)进行记录。在整个测试过程中,可以设定一定的工作电压来记录它的电阻变化值。在本系统中应用铁架台来固定可见光光源4,通过移动能够调整它与探测器2之间的距离,从而可以得到不同强度的光强,这样就能显示出不同光强下对该类器件的光响应性能。
在可见光光源4与探测器2之间还可以加上玻璃或滤光片5,通过玻璃可以滤去紫光部分,只要可见光部分通过,这样就可以研究可见光对复合材料基探测器的影响。也可以选定某一种特定滤光片5,如选择蓝光滤光片,则可以仅仅让蓝光通过,从而探讨蓝光对氧化锌石墨烯基探测器的作用或影响。
氧化锌是非常好的施电子体而石墨烯是良好的受电子体,石墨烯具有大的比表面积、良好的导电性和高机械强度等优异的性质,它特殊的能带结构和优良的导电性能为电子转移和快速传输提供了很好的通道,通过化学法将两者有效沉积在叉指电极上,同时通过搭建实验装置,在可见光光源与器件之间引入滤光片,可以有效的探讨该类可见光器件的在可见波波段的光响应性能。
Claims (5)
1.一种基于氧化锌石墨烯功能复合纳米材料的可见光探测系统,其特征在于,包括带有电极(1)的探测器(2),ZnO纳米线溶液沉积在电极(1)上并经过干燥,高精度半导体测试仪(3)的正负极与电极(1)相连,在测试过程中,通过设定一定的工作电压来记录探测器(2)的电阻变化,在探测器(2)的上方设有可见光光源(4),可见光光源(4)与探测器(2)之间的距离可调从而得到不同强度的光强。
2.如权利要求1所述的一种基于氧化锌石墨烯功能复合纳米材料的可见光探测系统,其特征在于,在所述电极(1)上沉积ZnO纳米线溶液包括以下步骤:
将ZnO纳米线溶于去离子水中配置成溶液,取石墨烯量子点溶液滴入上述溶液中,并对其磁力搅拌一小时,得到分散性很好的ZnO纳米线悬溶液,用微量调节注射器取ZnO纳米线悬溶液沉积在所述电极(1)上,最后放于烘箱中进行干燥。
3.如权利要求2所述的一种基于氧化锌石墨烯功能复合纳米材料的可见光探测系统,其特征在于,所述ZnO纳米线在溶液中的浓度为5~6mol/1。
4.如权利要求2所述的一种基于氧化锌石墨烯功能复合纳米材料的可见光探测系统,其特征在于,所述溶液与所述石墨烯量子点溶液的摩尔比为(20∶1)~(25∶1)。
5.如权利要求1所述的一种基于氧化锌石墨烯功能复合纳米材料的可见光探测系统,其特征在于,在所述可见光光源(4)与所述探测器(2)之间设有用于滤去紫光的玻璃或仅让特定光通过的滤光片(5)。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610912638.1A CN106595852B (zh) | 2016-10-20 | 2016-10-20 | 基于氧化锌石墨烯功能复合纳米材料的可见光探测系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610912638.1A CN106595852B (zh) | 2016-10-20 | 2016-10-20 | 基于氧化锌石墨烯功能复合纳米材料的可见光探测系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106595852A true CN106595852A (zh) | 2017-04-26 |
CN106595852B CN106595852B (zh) | 2018-07-31 |
Family
ID=58556048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610912638.1A Active CN106595852B (zh) | 2016-10-20 | 2016-10-20 | 基于氧化锌石墨烯功能复合纳米材料的可见光探测系统 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106595852B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101920995A (zh) * | 2009-06-16 | 2010-12-22 | 索尼公司 | 二氧化钒纳米线及其制备方法以及使用二氧化钒纳米线的纳米线装置 |
CN103050169A (zh) * | 2013-01-23 | 2013-04-17 | 南京苏展化工科技有限公司 | 一种柔性透明电极及其制备方法 |
CN203085198U (zh) * | 2013-01-23 | 2013-07-24 | 南京苏展化工科技有限公司 | 一种柔性透明电极 |
WO2014161382A1 (en) * | 2013-04-05 | 2014-10-09 | Nuovo Film Inc. | Transparent conductive electrodes comprising merged metal nanowires, their structure design,and methodof making such structures |
-
2016
- 2016-10-20 CN CN201610912638.1A patent/CN106595852B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101920995A (zh) * | 2009-06-16 | 2010-12-22 | 索尼公司 | 二氧化钒纳米线及其制备方法以及使用二氧化钒纳米线的纳米线装置 |
CN103050169A (zh) * | 2013-01-23 | 2013-04-17 | 南京苏展化工科技有限公司 | 一种柔性透明电极及其制备方法 |
CN203085198U (zh) * | 2013-01-23 | 2013-07-24 | 南京苏展化工科技有限公司 | 一种柔性透明电极 |
WO2014161382A1 (en) * | 2013-04-05 | 2014-10-09 | Nuovo Film Inc. | Transparent conductive electrodes comprising merged metal nanowires, their structure design,and methodof making such structures |
Non-Patent Citations (1)
Title |
---|
叶小亮: "基于ZnO/Graphene纳米复合材料紫外光探测器的制备与实现", 《上海电机学院学报》 * |
Also Published As
Publication number | Publication date |
---|---|
CN106595852B (zh) | 2018-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Hosseini et al. | High-performance UV‐Vis-NIR photodetectors based on plasmonic effect in Au nanoparticles/ZnO nanofibers | |
Shao et al. | High performance of nanostructured ZnO film gas sensor at room temperature | |
Nasiri et al. | Three-dimensional nano-heterojunction networks: A highly performing structure for fast visible-blind UV photodetectors | |
Zou et al. | Synthesis and enhanced NO2 gas sensing properties of ZnO nanorods/TiO2 nanoparticles heterojunction composites | |
Zhao et al. | Synthesis and ethanol sensing properties of Al-doped ZnO nanofibers | |
Kushwaha et al. | Defect induced high photocurrent in solution grown vertically aligned ZnO nanowire array films | |
Garuthara et al. | Photoluminescence characterization of polycrystalline n-type Cu2O films | |
CN103545397B (zh) | 薄膜紫外光探测器及其制备方法与应用 | |
Xu et al. | A metal–semiconductor–metal detector based on ZnO nanowires grown on a graphene layer | |
CN109786486A (zh) | 一种双钙钛矿单晶光电探测器及其制备方法 | |
Safa et al. | Investigation of reduced graphene oxide effects on ultra-violet detection of ZnO thin film | |
Zou et al. | CdS/ZnO nanocomposite film and its enhanced photoelectric response to UV and visible lights at low bias | |
Li et al. | Sb2O3 nanobelt networks for excellent visible-light-range photodetectors | |
JP2018530740A (ja) | 錫ドープ光触媒式ホルムアルデヒド感知材料およびその製造方法、ならびにホルムアルデヒドセンサ | |
Zargar et al. | Optical properties of ZnO/SnO2 composite coated film | |
Ji et al. | Trap‐related nonvolatile negative photoconductivity in a single Ag@ Al2O3 hybrid nanorod for a photomemory with light‐writing and bias‐erasing | |
Cheng et al. | Effects of interface states on photoexcited carriers in ZnO/Zn2SnO4 type-II radial heterostructure nanowires | |
Cao et al. | Pine‐Branch‐Like SnO2/ZnO Heterostructure with Suppressed Dark Current and Enhanced On/Off Ratio for Visible‐Blind UV Imaging | |
Yang et al. | A self-powered high performance UV-Vis-NIR broadband photodetector based on β-Bi 2 O 3 nanoparticles through defect engineering | |
Ling et al. | A tin oxide/silicon heterojunction with a nano litchi shell structure for ultrafast, high-detectivity, self-powered broadband photodetectors | |
CN105806487A (zh) | 基于表面等离激元增强Ga2O3薄膜的紫外火焰探测器及其制备方法 | |
Wang et al. | Ultraviolet irradiation dosimeter based on persistent photoconductivity effect of ZnO | |
Jin et al. | Localized surface plasmon-enhanced ultraviolet and visible photoresponse based on ZnO films with Au nanoparticles | |
CN104820006B (zh) | 一种基于ZnO和CdS复合半导体材料的灵敏检测Cd2+的光电化学传感器的制备方法及应用 | |
EP2419372A1 (en) | Zinc oxide nanostructures and sensors using zinc oxide nanostructures |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |