CN106586941A - Micro-electromechanical apparatus, and manufacturing method and signal attenuation-proof method thereof - Google Patents
Micro-electromechanical apparatus, and manufacturing method and signal attenuation-proof method thereof Download PDFInfo
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- CN106586941A CN106586941A CN201610399509.7A CN201610399509A CN106586941A CN 106586941 A CN106586941 A CN 106586941A CN 201610399509 A CN201610399509 A CN 201610399509A CN 106586941 A CN106586941 A CN 106586941A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/00698—Electrical characteristics, e.g. by doping materials
Abstract
A micro-electromechanical apparatus having a signal attenuation-proof function, and a manufacturing method and a signal attenuation-proof method thereof are disclosed. The micro-electromechanical apparatus includes a substrate, an insulation layer, and a sensing unit. The insulation layer is arranged on the substrate, and the sensing unit is above the insulation layer. The substrate has a doped region in which a majority of conductive carriers have the same polarity as an electronic signal. The insulation layer is located on the substrate, and the sensing unit is located above the insulation layer and forms the electronic signal when sensing a force.
Description
Technical field
The present invention with regard to a kind of microelectromechanicdevices devices, it is particularly a kind of with the microelectromechanicdevices devices for preventing signal attenuation function and
Its manufacture method and the method for preventing signal attenuation, use the situation for preventing the signal of telecommunication from the loss of signal occurring.
Background technology
In manufacture of semiconductor, most element is made all from metal level and the continuous process of oxide layer.Wherein,
Micro electronmechanical (Micro-Electro-Mechanical-System, hereinafter referred to as MEMS) element is common for one kind and uses metal
Layer mutually stacks the semiconductor element to be formed with oxide layer.MEMS element its maximum advantage made with manufacture of semiconductor is as whole
Specific use integrated circuit (Application-Specific Integrated Circuit, ASIC) is closed with MEMS in same
Plane, eliminates the packaged type of complexity, but a topmost difficult problem is and is present between MEMS element and peripheral structure material
Ghost effect.
In the processing procedure of MEMS element, to be considered not only has frame for movement, it is necessary to frame for movement is converted into electricity also
Sub-circuit model, measurement of the structure for then being combined with ASIC again as entirety, to reach the purpose of single wafer based system.But
MEMS element is established in the top of silicon substrate as substrate by the big more options silicon materials of MEMS element, therefore when electronic signal is passed
The effect that will produce parasitic capacitance when MEMS element between MEMS element and silicon substrate is passed, causes to have an opportunity to make part ratio
The electronic signal of example is lost in silicon substrate, that is, the common loss of signal (Loss).
In general, at present various have been used for MEMS element of the prior art parasitic capacitance with silicon substrate mostly
Effect, which causes the strength retrogression of the electronic signal being transmitted in MEMS element so that the output of electronic signal is reduced, together
When also increase the complexity of follow-up signal processing circuit.
The content of the invention
The invention reside in providing a kind of with preventing the microelectromechanicdevices devices and its manufacture method of signal attenuation function and prevent
The method of signal attenuation, it is identical with the polarity of the signal of telecommunication transmitted in sensing unit by the polarity for making substrate, in substrate
Mutual exclusion is produced and sensing unit between, and then prevents the signal of telecommunication from the loss of signal occurring.
According to an embodiment provided by the present invention with the microelectromechanicdevices devices for preventing signal attenuation function, it is micro electronmechanical
Device includes a substrate, an insulating barrier and a sensing unit.Substrate has a doped region, doped with multiple miscellaneous in this doped region
Matter.Insulating barrier is located on substrate, and sensing unit is then located above insulating barrier.Sensing unit comprising a mass, it is multiple can galvanic electricity
Pole, multiple fixed electrodes and multiple flexible members.The plurality of movable electrode is respectively face-to-face with the plurality of fixed electrode
It is separated by.The plurality of flexible member supports mass, and mass couples the plurality of movable electrode, and mass and described many
Individual movable electrode is vibrated in response to an external force.When mass and the plurality of movable electrode vibrate, a signal of telecommunication can be accordingly
Produce and transmit in sensing unit.Now, the polarity of the signal of telecommunication is identical with the polarity of the conducting currier of main body in doped region.
In another embodiment, the material of the mass of aforesaid microelectromechanicdevices devices contains polysilicon, and flexible member
Material be metal.
In another embodiment, the material of those impurity being doped in aforesaid microelectromechanicdevices devices is III or V races material
Material.
In another embodiment, aforesaid microelectromechanicdevices devices further include a controller.Controller is electrically connected with substrate and sense
Unit is surveyed, to judge whether mass deviates a predeterminated position of mass in the case of the not external force.Work as mass
When deviateing predeterminated position in the case of the not external force, controller provides a control voltage, so that mass recovers to pre-
If position.
In another embodiment, the controller of aforesaid microelectromechanicdevices devices determines whether the plurality of fixed electrode and institute
State whether each capacitance between multiple movable electrodes is different from its corresponding predetermined capacitance.When the plurality of fixed electricity
When each capacitance between pole and the plurality of movable electrode is different from its corresponding predetermined capacitance, controller judges this
Mass has deviateed predeterminated position in the absence of external forces.
According to the manufacture method of the microelectromechanicdevices devices of an embodiment provided by the present invention, this manufacture method includes following step
Suddenly：One substrate is set, and substrate has a doped region, doped with multiple impurity in doped region；One insulating barrier is set on substrate；
And one sensing unit of setting is above insulating barrier.Sensing unit includes a mass, multiple movable electrodes, multiple fixed electrodes
With multiple flexible members.Movable electrode is separated by fixed electrode and faces fixed electrode respectively.Mass couples movable electrode, with
And flexible member supports mass.When mass and movable electrode are vibrated in response to the external force for putting on microelectromechanicdevices devices,
One signal of telecommunication can accordingly be produced and be transmitted in sensing unit.Now, in the polarity of the signal of telecommunication and doped region main body conduction
The polarity of carrier is identical.
In another embodiment, the material of the mass in aforesaid manufacture method contains polysilicon, and flexible member
Material be metal.
In another embodiment, the material of those impurity being doped in aforesaid manufacture method is III or V races material
Material.
In another embodiment, aforesaid manufacture method further includes one controller of setting, and this controller is electrically connected with substrate
With sensing unit and to supply a control voltage to substrate, the polarity of control voltage is identical with the polarity of the aforesaid signal of telecommunication.
According to an embodiment provided by the present invention with another microelectromechanicdevices devices for preventing signal attenuation function, microcomputer
Electric installation includes a substrate, an insulating barrier and a sensing unit.Insulating barrier is located on substrate, and sensing unit is then located at insulating barrier
Top.Substrate receives a control voltage.Sensing unit is located above insulating barrier, and sensing unit includes a mass, multiple movable
Electrode, multiple fixed electrodes and multiple flexible members.Movable electrode is separated by fixed electrode and face-to-face with fixed electrode respectively.
Flexible member supports mass, mass coupling movable electrode, and mass and movable electrode vibrate in response to an external force.
When mass and movable electrode vibrate, a signal of telecommunication can accordingly be produced and be transmitted in sensing unit, the polarity of the signal of telecommunication
It is identical with the polarity of the conducting currier of main body in doped region.
In another embodiment, aforesaid microelectromechanicdevices devices further include a controller.Controller is electrically connected with substrate and sense
Survey unit.Controller judges whether mass has deviateed its predeterminated position in the absence of external forces, and when mass is in nothing
When having deviateed its predeterminated position in the case of external force, controller adjustment control voltage makes mass recover to its predeterminated position.
In another embodiment, the controller of aforesaid microelectromechanicdevices devices judges every between fixed electrode and movable electrode
Whether one capacitance is different from its other predetermined capacitance.When each capacitance difference between fixed electrode and movable electrode
When its other predetermined capacitance, controller then judges that mass has deviateed its predeterminated position in the absence of external forces.
In another embodiment, the material of the mass of aforesaid microelectromechanicdevices devices contains polysilicon, and flexible member
Material be metal.
According to the method for preventing signal attenuation of an embodiment provided by the present invention, which is applied to a microelectromechanicdevices devices,
This microelectromechanicdevices devices includes a substrate, an insulating barrier and a sensing unit.Insulating barrier is located on substrate, and sensing unit is located at insulation
Layer top.Sensing unit includes a mass, multiple movable electrodes, multiple fixed electrodes and multiple flexible members.Movable electrode
It is separated by with fixed electrode and respectively face-to-face with fixed electrode.Flexible member supports mass, mass coupling movable electrode.
Mass and movable electrode can be vibrated in response to the external force for putting on microelectromechanicdevices devices.This prevents the method for signal attenuation from including
When power acts on microelectromechanicdevices devices in addition, supply one control voltage to substrate, and the polarity of this control voltage with sensing
The polarity of the signal of telecommunication for producing in unit and transmitting is identical.
In another embodiment, the aforesaid method for preventing signal attenuation is further included and judges mass in the situation without external force
Under whether deviateed a predeterminated position；And when mass deviates predeterminated position in the absence of external forces, adjustment control
Voltage, makes mass recover to predeterminated position.
In another embodiment, in the aforesaid method for preventing signal attenuation, judge that mass is in the absence of external forces
It is no to include the step of deviateed predeterminated position：Judge whether each capacitance between fixed electrode and movable electrode is different from which
Predetermined capacitance；And when each capacitance between fixed electrode and movable electrode is different from its predetermined capacitance, judge
Mass has deviateed predeterminated position in the absence of external forces.
In another embodiment, in the aforesaid method for preventing signal attenuation, substrate has a doped region, in this doped region
In doped with impurity so that in doped region, the polarity of the conducting currier of main body is identical with the polarity of the aforesaid signal of telecommunication.
In another embodiment, in the aforesaid method for preventing signal attenuation, the material of the aforementioned impurity being doped is III
Race or V races material.
Therefore, it is provided by the present invention to make the polarity of doped region by the dopant impurity atoms in the doped region of substrate
It is identical with the polarity of the signal of telecommunication transmitted in sensing unit, or also can have same pole with the signal of telecommunication by directly supply
One control voltage of property is to substrate, and then mutual exclusion is produced between substrate and sensing unit.Thereby, the signal of telecommunication can avoid letter
The situation for number being lost in substrate occurs, and can maintain its original signal intensity and output.Also, it is follow-up to process this
Therefore the signal processing circuit of the signal of telecommunication also can simplify.
In addition, through suitable for microelectromechanicdevices devices the method for preventing signal attenuation, when mass occur it is unexpected
Displacement when, the present invention can by supply one variable control voltage the mutual exclusion between substrate and sensing unit is lifted to substrate
Effect, makes mass recover to its predeterminated position.Even if consequently, it is possible to aforesaid flexible member during its service life gradually
Follow the string, the mutual exclusion between substrate and sensing unit still be enough to avoid the situation of signals leakiness to substrate to occur.
More than with regard to the explanation of present disclosure and the explanation of following embodiment to demonstrate and explain the present invention
Spirit and principle, and provide the present invention patent claim further explain.
Description of the drawings
Figure 1A is the generalized section of the microelectromechanicdevices devices according to depicted in one embodiment of the invention.
Figure 1B is the top view of the sensing unit according to depicted in one embodiment of the invention.
Fig. 1 C be in sensing unit according to depicted in one embodiment of the invention multiple fixed electrodes and it is multiple can galvanic electricity
Generalized section of the pole along hatching A-A '.
Fig. 1 D are the schematic diagram of the parasitic equivalent circuit in the Figure 1A according to depicted in one embodiment of the invention.
Fig. 2 is the flow chart of the manufacture method of the microelectromechanicdevices devices according to depicted in one embodiment of the invention.
Fig. 3 is the schematic diagram of the microelectromechanicdevices devices according to depicted in another embodiment of the present invention.
Fig. 4 is the method for preventing signal attenuation for being applied to microelectromechanicdevices devices according to depicted in one embodiment of the invention
Flow chart.
Fig. 5 is the schematic diagram of the microelectromechanicdevices devices according to depicted in one more embodiment of the present invention.
Fig. 6 is the side for preventing signal attenuation for being applied to microelectromechanicdevices devices according to depicted in another embodiment of the present invention
The flow chart of method.
Wherein, reference：
100th, 200,300 microelectromechanicdevices devices
110th, 310 substrate
111 doped regions
112 foreign atoms
120 insulating barriers
130 sensing units
132 masses
1321 movable electrodes
134 flexible members
136 outer shrouds
1361a, 1361b fixed electrode
240th, 340 controller
C1, C2, C3 parasitic capacitance
CP1、CP2Electric capacity
R1, R2, R3 dead resistance
Specific embodiment
Hereinafter the detailed features and advantage of the present invention are described in embodiments in detail, its content be enough to make any ability
The technical staff in domain understands the technology contents of the present invention and implements according to this, and is wanted according to content disclosed in this specification, right
Ask protection domain and accompanying drawing, any those skilled in the art be readily understood upon the purpose and advantage of correlation of the invention.Below
Embodiment further describe the viewpoint of the present invention, it is but non-anyways limiting scope of the invention.
The present invention relates to a kind of MEMS (MEMS) device, MEMS device described here may be, for example, but be not limited to
Sound sensor (acoustic sensor), pressure sensor (pressure sensor), altimeter (altimeter), stream
Gauge (flowmeter) or tactile sensor (tactile sensor).Sound sensor may be, for example, but be not limited to mike.
In one example, the MEMS device of capacitor type is a kind of the external force (input force) of input is changed into sensing signal
Device.Here external force may be, for example, but be not limited to sound, pressure etc..Also, the running of the MEMS device of capacitor type is to be based on
The principle of the capacitor of the electrode in face is faced each other using two kinds.One of which electrode is integrally fixed on a substrate, and another kind of
Electrode is then to float in the air.Thereby, the barrier film (diaphragm) in the MEMS device of capacitor type can be in response to the external force of input
And move.When the external force of input is experienced, barrier film can vibrate so that the interval between two kinds of electrodes changes, and then change two
Capacitance between electrode.Therefore, when the electric charge stream for flowing through the equivalent capacity formed by two electrodes, that is, the signal of telecommunication, it is sampled
And when being further processed in follow-up phase, this external force is converted to the capacitance that can be read and forms sensing letter
Number.
Refer to Figure 1A to Fig. 1 C.Figure 1A is that the section of the microelectromechanicdevices devices according to depicted in one embodiment of the invention shows
It is intended to, Figure 1B is the top view of the sensing unit according to depicted in one embodiment of the invention, and Fig. 1 C is according to the present invention
An embodiment depicted in sensing unit in multiple fixed electrodes and multiple movable electrodes show along the section of hatching A-A '
It is intended to.As illustrated, microelectromechanicdevices devices 100 be by MEMS technology manufacture, and have prevent signal attenuation function.It is micro electronmechanical
Device 100 may be, for example, but be not limited to a mike, pressure sensor, altimeter, effusion meter or tactile sensor.Microcomputer Denso
100 are put including at least a substrate 110, an insulating barrier 120 and a sensing unit 130.
Substrate 110 has a doped region 111, and doped with multiple foreign atoms (impurity atom) in doped region 111
112 (or referred to as impurity), therefore when a signal of telecommunication is given birth to and is transmitted in sensing unit 130 in response to the external force of an input, mix
In miscellaneous area 111, the polarity of the conducting currier of main body and the polarity of this signal of telecommunication are identical.In other words, substrate 110 is with electric with this
Signal identical polarity.For example, when the material of the foreign atom 112 being doped in doped region 111 may be, for example, but not limit
When III or V races material, in doped region 111, the conducting currier of main body can be electric hole or electronics.In one embodiment, when mixing
When the foreign atom 112 being doped in miscellaneous area 111 is belonging to III material, aforesaid conducting currier is electric hole；Or, another
In one embodiment, when the foreign atom 112 being doped in doped region 111 is belonging to V races material, aforesaid conducting currier is electricity
Son.Substrate 110 may be, for example, but be not limited to p-type or N-type silicon substrate.
Insulating barrier 120 is can be located above substrate 110 or top, to bring screen effect for MEMS
(shielding effect).In one embodiment, insulating barrier 120 can be by thin film deposition (thin film deposition)
Technology is realizing.In one embodiment, the material of insulating barrier 120 can be dielectric material, such as but not limited to oxidation material or
Nitride material.
Sensing unit 130 can be located at 120 on or above of insulating barrier, may be used in the case where being powered, outside sensing one
The input of power.Sensing unit 130 is including at least a mass 132 (also being taken to diaphragm or tympanum (membrane)), many
Individual flexible member 134, an outer shroud 136, multiple movable electrodes 1321 and multiple fixed electrode 1361a and 1361b (are referred to as fixing
Electrode is 1361).Flexible member 134 couples mass 132, and the coupling flexible member 134 of outer shroud 136, movable electrode 1321 are coupled to
Mass 132, and fixed electrode 1361 is coupled to outer shroud 136.In one embodiment, mass 132 can have one or more to lead to
Hole (through hole).
As shown in Figure 1B, flexible member 134 is arranged between mass 132 and outer shroud 136, to support mass
132.Mass 132 and movable electrode 1321 have gap, and movable electrode respectively between insulating barrier 120 and outer shroud 136
1321 have gap respectively between fixed electrode 1361 and outer shroud 136.Therefore, mass 132 and movable electrode 1321 can be in response to
Aforesaid external force and vibrate together, and can equivalent formation electric capacity CP between movable electrode 1321 and fixed electrode 13611And CP2, such as
Shown in Fig. 1 C.The present invention is not limiting as material and shape, the material of outer shroud 136 and shape, the flexible member 134 of mass 132
Material and shape, flexible member 134 be coupled to the configuration relation of outer shroud 136 and mass 132, movable electrode 1321 and match somebody with somebody
Put, material and shape, the configuration of fixed electrode 1361, material and shape, the distance between mass 132 and outer shroud 136 length
And the distance between mass 132 and insulating barrier 120 length, and one skilled in the art can be according to actual need
Ask to design features described above.
In one embodiment, sensing unit 130 is electrically connected with an analog-digital converter (analog to digital
Convertor, ADC).Supply to movable electrode 1321 and a second voltage when a first voltage and supply to fixed electrode 1361
Afterwards, and the external force that is input into is when putting on sensing unit 130, mass 132 will be vibrated, movable electrode 1321 in response to this external force
Can equivalent formation electric capacity CP and fixed electrode 1361 between1And CP2And electric capacity CP1And CP2Can be because of the vibration of mass 132
Change.Therefore, a signal of telecommunication can flow through mass 132, flexible member 134, fixed electrode 1361 and outer shroud 136, and simulate
This signal of telecommunication can be changed into a sensing signal as follow-up application for digital converter.
For example, the material of mass 132 can be but be not limited to comprising polysilicon or other are possible with less heat
The material of the coefficient of expansion (thermal expansion coefficient), the material of flexible member 134 can be but be not limited to gold
Category or metalloid.For example, flexible member 134 can be spring (spring).
For embodiment with the material of foreign atom 112 as group-v element, can be by ion implanter (ion
Implanter) or impurity diffusion machine (impurity diffuser) mixes foreign atom 112 in doped region 111, however this
Invention is not limited to above-mentioned method.As the foreign atom 112 for belonging to five race's materials can be presented the characteristic of electronics, therefore mixing
In miscellaneous area 111, the conducting currier of main body is electronics and has negative polarity, and then causes the polarity of doped region 111 also substantially negative pole
Property.In above-mentioned equivalent circuit, when the described negatively charged signal of telecommunication flows in sensing unit 130, due to telecommunications
The situation of mutual exclusion (repulsion) number can be produced and substrate 110 between so that from this electric signal streams to the electrical leakage quantity of substrate 110
Can reduce.Therefore, the above-mentioned signal of telecommunication almost can only be transmitted in sensing unit 130 without leakage to substrate 110.
Through the design of the doped region 111 in above-mentioned microelectromechanicdevices devices 100, can avoid in substrate 110 and sensing unit 130
Between insulating barrier 120 in formed and can cause signals leakiness to the parasitic capacitance of substrate 110, and then make to be transmitted in sensing unit
The signal of telecommunication in 130 can maintain its original intensity without decaying.
Fig. 1 D are refer to, wherein illustrating the parasitic equivalent circuit in Figure 1A.Substrate 110 can be equivalent to dead resistance R1
With parasitic capacitance C1.Insulating barrier 120 can be equivalent to parasitic capacitance C2.Sensing unit 130 can be equivalent to dead resistance R2,
One dead resistance R3 and parasitic capacitance C3.Furthermore, it is understood that the formation of dead resistance R2 is based on mass 132, parasitic electricity
The formation of resistance R3 is that, based on flexible member 134, and the formation of parasitic capacitance C3 is based on mass 132, flexible member 134 and outer
Ring 136.Annexation between dead resistance R1, R2 and R3 and parasitic capacitance C1, C2 and C3 is referred to shown in Fig. 1 D, in this not
Repeat again.
For microelectromechanicdevices devices 100, as the above-mentioned signal of telecommunication can be transmitted only in sensing unit 130 so that electricity
Signal will not leak to substrate 110.That is, the signal of telecommunication can be by dead resistance R2, parasitic capacitance C3 and dead resistance R3
Transmit to outfan, transmit without by parasitic capacitance C2, dead resistance R1 and parasitic capacitance C1.Thereby, the signal of telecommunication can
Avoid producing the loss of signal so that the intensity and output of the signal of telecommunication can maintain its other original value.
On the other hand, after the completion of a microelectromechanicdevices devices manufacture, the mass in the sensing unit of this microelectromechanicdevices devices
With outer shroud substantially copline (coplanar) or in identical level.However, due to the use in this microelectromechanicdevices devices
Period, the multiple flexible members for being coupled to mass and outer shroud may gradually lose its elasticity over time so that mass
With outer shroud thus deviate copline originally or become positioned at varying level position.In detail, the position of mass may become
The horizontal level that outer shroud is located must be less than.In other words, mass is acting on the situation of this microelectromechanicdevices devices without any external force
Under have deviated from its predeterminated position.This will make aforesaid mutual exclusion die down, and probably lead to not prevent signals leakiness to substrate
Situation occur, and then cause follow-up sensing signal the situation of noise or error occur.For this purpose, the present invention is another providing with extensive
The enforcement aspect of the microelectromechanicdevices devices of the function of compound body gauge block position, its details are as follows.Also, in order to briefly illustrate this
It is bright, it is set with mass, multiple movable electrodes, multiple fixed electrodes and outer shroud below in relation to each embodiment of sensing unit
Enforcement aspect on phase same level is used as illustrative example.
Fig. 3 is refer to, which has illustrated a microelectromechanicdevices devices 200.Microelectromechanicdevices devices 200 are exhausted including at least a substrate 110,
Edge layer 120, a sensing unit 130 and a controller 240.Substrate 110, insulating barrier 120 and sensing in microelectromechanicdevices devices 200 is single
Unit 130 is identical with the substrate 110 in microelectromechanicdevices devices 100, insulating barrier 120 and sensing unit 130, therefore microelectromechanicdevices devices 200
In the details of substrate 110, insulating barrier 120 and sensing unit 130 refer to the microelectromechanicdevices devices 100 shown in Figure 1A and Figure 1B
It is related to discuss.
Controller 240 is electrically connected with substrate 110 and sensing unit 130.Controller 240 judges mass 132 without any
Whether external force has deviateed its predeterminated position in the case of applying.For example, controller 240 is judged in situation about applying without any external force
Under, whether the position of mass 132 is less than the position of outer shroud 136.When the position of mass 132 is in the feelings applied without any external force
When having deviateed its predeterminated position under condition, controller 240 will provide a control voltage to substrate 110, the polarity of this control voltage with
The polarity of the aforesaid signal of telecommunication is identical, the position of mass 132 is recovered to predeterminated position.In this embodiment or others
In embodiment, the level of control voltage can deviate the degree of its predeterminated position to set according to mass 132.
In one embodiment, as movable electrode 1321 is coupled to mass 132 and fixed electrode 1361 is coupled to outward
Ring 136, thus judge whether mass 132 has deviateed the method for its predeterminated position under without the effect of any external force can be by judgement
Whether movable electrode 1321 and fixed electrode 1361 are in the mode of phase same level completing.Additionally, in one embodiment, if control
The storage element of device 240 stores the data of the predetermined capacitance between movable electrode 1321 and each fixed electrode 1361
When, whether controller 240 can pass through this data to judge movable electrode 1321 and fixed electrode 1361 on phase same level.Also
It is to say, controller 240 can judge whether capacitance current between these movable electrodes 1321 and fixed electrode 1361 is substantial
Equal to its other predetermined capacitance.When the capacitance present value between those movable electrodes 1321 and fixed electrode 1361 is different from
During its other predetermined capacitance, controller 240 will judge that mass 132 now has deviateed which under without the effect of any external force
Predeterminated position.
Fig. 2 is the flow chart of the manufacture method of the microelectromechanicdevices devices according to depicted in one embodiment of the invention.For brief
Chen Ming is of the invention on ground, and this manufacture method is to be applied to aforementioned microelectromechanicdevices devices 200 as an example, and substrate 110 is also with a silicon
Substrate is as an example.First, in step S210, aforesaid foreign atom 112 is doped in the doped region 111 of substrate 110.
In one embodiment, foreign atom 112 can be mixed by doper (such as but not limited to ion implanter or impurity diffusion machine)
It is miscellaneous enter substrate 110 in.
In this example, in doped region 111, the polarity of the conducting currier of main body is identical with the polarity of the aforesaid signal of telecommunication.Quilt
The material of the foreign atom 112 of doping can be III material or V races material, therefore the conducting currier of main body can be electric hole or electricity
Son.That is, when the foreign atom 112 being doped is III material, the conducting currier of main body is electric hole；And work as quilt
When the foreign atom 112 of doping is V races material, the conducting currier of main body is electronics.
Then, in step S220, insulating barrier 120 is set on substrate 110.In one embodiment, insulating barrier 120 can mat
Made by the mode of thin film deposition.Finally, in step S230, above insulating barrier 120, arrange including at least quality
The sensing unit 130 of block 132, flexible member 134, movable electrode 1321, fixed electrode 1361 and outer shroud 136.Movable electrode
1321 are separated by with fixed electrode 1361 and respectively face-to-face with fixed electrode 1361.Mass 132 is coupled to movable electrode
1321, flexible member 134 can support mass 132.When mass 132 and movable electrode 1321 are in response to putting on microelectromechanicdevices devices
100 external force and when vibrating together, a signal of telecommunication can be produced and be transmitted in sensing unit 130, and the polarity of this signal of telecommunication
It is identical with the polarity of the conducting currier of main body in doped region 111.Its with the microelectromechanicdevices devices 100 for preventing signal attenuation function
His details refers to Figure 1A narrations related in Figure 1B.
Consequently, it is possible to the generation of parasitic capacitance in the insulating barrier 120 of microelectromechanicdevices devices 100, can be reduced, thus the signal of telecommunication can
The situation of signals leakiness to substrate 110 is avoided to occur and its signal intensity can be maintained.
Then, in step S240, a controller 240 is set, this controller 240 is electrically connected with substrate 110 and sensing is single
Unit 130.Through the running of controller 240, though flexible member 134 gradually lose over time its it is elastic when, aforesaid mutual exclusion
Effect still be enough to avoid the situation of signals leakiness to substrate 110 to occur.
Aforesaid microelectromechanicdevices devices 200 can be attributed to following preventing to the method for avoiding the signal of telecommunication that signal attenuation occurs
The method of signal attenuation.
Fig. 4 be according to depicted in one embodiment of the invention be applied to microelectromechanicdevices devices 200 prevent signal attenuation
The flow chart of method.Prevent the method for signal attenuation from comprising the steps of as depicted.In step S410, mass is detected
Whether 132 there is unexpected displacement.That is, judging whether mass 132 has deviateed in the case of without any external force
Its predeterminated position.When mass 132 occurs unexpected displacement, a control voltage is supplied to substrate 110, such as step S420 institute
Show.The polarity of this control voltage and for producing in sensing unit 130 when external force puts on microelectromechanicdevices devices 200 and transmitting
The polarity of the signal of telecommunication is identical.Then, in step S430, detect whether still unexpected displacement.If mass 132 is extensive
When again to its predeterminated position, control voltage then maintains current level, as described in step S440.If the non-phase of mass 132
When the displacement of prestige is still suffered from, control voltage then can be continuously corrected until mass 132 recovers to its predeterminated position, or
Person's control voltage can be then continuously corrected till control voltage reaches its ultimate value, as shown in step S450.With regard to such as
What detection mass 132 whether there is the details of unexpected displacement and the details with regard to the structure of microelectromechanicdevices devices 200 please be joined
The related narration in face before examination.
Except the polarity for carrying out control base board by the mode of doped substrate as described above, the present invention also can come by other modes
The polarity of control base board, it is as described below.Fig. 5 is refer to, Fig. 5 is the microcomputer Denso according to depicted in one more embodiment of the present invention
Put 300 schematic diagram.Microelectromechanicdevices devices 300 are similar to microelectromechanicdevices devices 200.Microelectromechanicdevices devices 300 include at least a substrate
310th, an insulating barrier 120, a sensing unit 130 and a controller 340.Insulating barrier 120 and sensing in microelectromechanicdevices devices 300 is single
Unit 130 is identical with insulating barrier 120 and sensing unit 130 in microelectromechanicdevices devices 100, therefore the insulation in microelectromechanicdevices devices 300
Layer 120 refers to narration related in Figure 1A to Fig. 1 C to sensing unit 130.However, being micro- different from microelectromechanicdevices devices 200
Design of the electromechanical device 300 on substrate and the setting of controller 340.Substrate 310 can be provided with a doped region or be not provided with
Doped region.Controller 340 can directly and persistently supply a control voltage to substrate 310, the polarity of this control voltage and in sensing
The polarity of the signal of telecommunication for producing and transmitting in response to the input of an external force in unit 130 is identical.Therefore, 130 He of sensing unit
Mutual exclusion can be produced between substrate 310 so that substrate 310 will not be leaked in the signal of telecommunication of the transmission of sensing unit 130.
Additionally, controller 340 can judge whether mass 132 has deviateed its predeterminated position in the case where acting on without external force.Work as matter
When gauge block 132 has deviateed its predeterminated position in the case where acting on without external force, adjustment (for example, lifted or reduced) is controlled by controller 340
Voltage, makes mass 132 be able to recover to its predeterminated position.Therefore, sensing signal can avoid the unexpected position because of mass 132
Noise or error caused by moving.
Inside unit with regard to how to judge the position, the control of aforementioned control voltage and microelectromechanicdevices devices 300 of mass 132
The details of part and running refers to above related embodiment.
Microelectromechanicdevices devices 300 as above are following to avoid the method that the signal of telecommunication occurs signal attenuation from being attributed to
The method for preventing signal attenuation.
Fig. 6 is refer to, which illustrates the flow process of the method for preventing signal attenuation suitable for aforementioned microelectromechanicdevices devices 300
Figure.This prevents the method for signal attenuation from comprising the steps of.In step S610, there is provided a control voltage to substrate 310, and
The polarity of this control voltage and the signal of telecommunication for producing and transmitting in sensing unit 130 when external force puts on microelectromechanicdevices devices 300
Polarity it is identical.In step S620, judge whether mass 132 occurs unexpected displacement.If mass 132 is pre- at which
If during position, control voltage then maintains current level, as shown in step S630.If the unexpected displacement of mass 132
During generation, then persistently adjustment control voltage till mass 132 returns to its predeterminated position or until control voltage reach
Till its ultimate value, as shown in step S640.Detailed description with regard to how to detect the generation of the unexpected displacement of mass 132
And the thin portion explanation of microelectromechanicdevices devices 300 refer to above related narration.
In sum, it is provided by the present invention with prevent the microelectromechanicdevices devices and its manufacture method of signal attenuation function with
The method for preventing signal attenuation, by the dopant impurity atoms in the doped region of substrate, can make the polarity of doped region and sense
The polarity of the signal of telecommunication transmitted in unit is identical, or also can be by directly supply with the control for having identical polar with the signal of telecommunication
Voltage processed is to substrate, and then makes mutual exclusion is produced between substrate and sensing unit.Thereby, the signal of telecommunication can avoid the loss of signal in
The situation of substrate occurs, and can maintain its original signal intensity and output.Also, it is follow-up to process this signal of telecommunication
Therefore signal processing circuit also can simplify.
In addition it is also possible to the method through above-mentioned microelectromechanicdevices devices and its manufacture method with signal attenuation is prevented, works as matter
When there is unexpected displacement in gauge block, can by one variable control voltage of supply lifted to substrate substrate and sensing unit it
Between mutual exclusion, mass is recovered to its predeterminated position.Even if consequently, it is possible to aforesaid flexible member is over time gradually
Follow the string, the mutual exclusion between substrate and sensing unit still be enough to prevent the situation of signals leakiness to substrate from occurring.
Claims (18)
1. it is a kind of with the microelectromechanicdevices devices for preventing signal attenuation function, it is characterised in that to include：
One substrate, with a doped region, doped with impurity in the doped region；
One insulating barrier, on the substrate；And
One sensing unit, above the insulating barrier, the sensing unit is separated with the substrate, and the sensing unit includes a mass
Block, multiple movable electrodes, multiple fixed electrodes and multiple flexible members, those movable electrodes respectively with those fixed electrode phases
Every and face those fixed electrodes, those flexible members support the mass, and the mass couples those movable electrodes, and should
Mass and those movable electrodes are vibrated in response to an external force；
Wherein when two different potentials are respectively acting on the fixed electrode and the movable electrode, a signal of telecommunication can be in the sensing list
Accordingly produce in unit, the polarity of the signal of telecommunication is identical with the polarity of the conducting currier of main body in the doped region.
2. microelectromechanicdevices devices as claimed in claim 1, it is characterised in that the material of the mass contains polysilicon, and should
The material of a little flexible members is metal.
3. microelectromechanicdevices devices as claimed in claim 1, it is characterised in that the material of the impurity being doped is III or V races
Material.
4. microelectromechanicdevices devices as claimed in claim 1, it is characterised in that also include：
One controller, is electrically connected with the substrate and the sensing unit, to judge when the mass is acted on without external force, the matter
Whether gauge block deviates a predeterminated position, and when the mass has deviateed the predeterminated position in the case of the effect of no external force
When, the controller provides a control voltage to the substrate, so that the mass recovers to the predeterminated position, the pole of the control voltage
Property is identical with the polarity of the signal of telecommunication.
5. microelectromechanicdevices devices as claimed in claim 4, it is characterised in that the controller judge those fixed electrodes and those can
Whether each capacitance between moving electrode is different from its corresponding predetermined capacitance, acts on the matter without external force to judge to work as
During gauge block, whether the mass deviates the predeterminated position；And when each between those fixed electrodes and those movable electrodes
When the capacitance is different from its corresponding predetermined capacitance, the controller judges the mass in the situation for not having external force to act on
Under deviateed the predeterminated position.
6. a kind of manufacture method of microelectromechanicdevices devices, it is characterised in that include：
One substrate is set, and the substrate has a doped region, doped with impurity in the doped region；
One insulating barrier is set on the substrate；And
One sensing unit is set above the insulating barrier, the sensing unit is separated with the substrate, the sensing unit includes a matter
Gauge block, multiple movable electrodes, multiple fixed electrodes and multiple flexible members, those movable electrodes be separated by those fixed electrodes and
Those fixed electrodes are faced respectively, and the mass couples those movable electrodes, and those flexible members support the mass；
Wherein when two different potentials are respectively acting on the fixed electrode and the movable electrode, a signal of telecommunication can be in the sensing list
Accordingly produce in unit, the polarity of the signal of telecommunication is identical with the polarity of the conducting currier of main body in the doped region.
7. manufacture method as claimed in claim 6, it is characterised in that the material of the mass contains polysilicon, and those
The material of flexible member is metal.
8. manufacture method as claimed in claim 6, it is characterised in that the material of the impurity being doped is III or V races material
Material.
9. manufacture method as claimed in claim 6, it is characterised in that also include：
One controller is set, and the controller is electrically connected with the substrate and the sensing unit and acts on this without external force to judge to work as
During mass, whether the mass deviates a predeterminated position, and to when the mass is in the case of the effect of no external force
When having deviateed the predeterminated position, one control voltage of supply makes the mass recover to the predeterminated position, the wherein control to the substrate
The polarity of voltage processed is identical with the polarity of the signal of telecommunication.
10. it is a kind of with the microelectromechanicdevices devices for preventing signal attenuation function, it is characterised in that to include：
One substrate, to receive a control voltage；
One insulating barrier, on the substrate；And
One sensing unit, is separated above the insulating barrier and with the substrate, and the sensing unit includes a mass, Duo Geke
Moving electrode, multiple fixed electrodes and multiple flexible members, those movable electrodes are separated by respectively in those fixed electrodes and in the face of being somebody's turn to do
A little fixed electrodes, to support the mass, the mass couples those movable electrodes, and the mass to those flexible members
Vibrate in response to an external force with those movable electrodes；
Wherein when two different potentials are respectively acting on the fixed electrode and the movable electrode vibrates, a signal of telecommunication can be in the sense
Survey and accordingly produce in unit, the polarity of the signal of telecommunication is identical with the polarity of the control voltage.
11. microelectromechanicdevices devices as claimed in claim 10, it is characterised in that also include：
One controller, is electrically connected with the substrate and the sensing unit, to judge the mass in the case where acting on without external force
Whether a predeterminated position has been deviateed, and when the mass has deviateed the predeterminated position in the case where acting on without external force, should
Controller adjusts the control voltage, the mass is recovered to the predeterminated position.
12. microelectromechanicdevices devices as claimed in claim 11, it is characterised in that the controller judge those fixed electrodes and those
Whether each capacitance between movable electrode is different from its corresponding predetermined capacitance, to judge the mass without external force
Whether the predeterminated position is deviateed in the case of effect；And when each electricity between those fixed electrodes and those movable electrodes
When capacitance is different from its corresponding predetermined capacitance, the controller judges that the mass is inclined in the case where acting on without external force
From the predeterminated position.
13. microelectromechanicdevices devices as claimed in claim 10, it is characterised in that the material of the mass contains polysilicon, and
The material of those flexible members is metal.
A kind of 14. methods for preventing signal attenuation a, it is adaptable to microelectromechanicdevices devices, the microelectromechanicdevices devices include a substrate, exhausted
Edge layer and a sensing unit, the insulating barrier are arranged on the substrate, and the sensing unit is arranged at the top of the insulating barrier, the sensing
Unit includes a mass, multiple movable electrodes, multiple fixed electrodes and multiple flexible members, and those movable electrodes are separated by this
A little fixed electrodes and those fixed electrodes are respectively faced, those flexible members support the mass, and the mass couples those
, to vibrate in response to the external force for putting on the microelectromechanicdevices devices, this is prevented for movable electrode, the mass and those movable electrodes
The method of stop signal decay is included：
A control voltage is provided to the substrate, the polarity of the control voltage is identical with the polarity of a signal of telecommunication, the signal of telecommunication system works as
When two different potentials are respectively acting on the fixed electrode and the movable electrode produced by the sensing unit, the wherein sensing
Unit is separated with the substrate.
15. methods for preventing signal attenuation as claimed in claim 14, it is characterised in that also include：
Judge whether the mass has deviateed a predeterminated position in the case where acting on without external force；And
When the mass has deviateed the predeterminated position in the case where acting on without external force, the control voltage is adjusted, so that the matter
Gauge block recovers to the predeterminated position.
16. methods for preventing signal attenuation as claimed in claim 15, it is characterised in that judge the mass without outer masterpiece
The step of whether having deviateed the predeterminated position with the case of includes：
Judge whether each capacitance between those fixed electrodes and those movable electrodes is different from its corresponding one default electricity
Capacitance；And
When each capacitance between those fixed electrodes and those movable electrodes is in the feelings that the mass is acted on without external force
When its corresponding predetermined capacitance is different under condition, judge that the mass has deviateed this and preset in the case where acting on without external force
Position.
17. methods for preventing signal attenuation as claimed in claim 14, it is characterised in that the substrate has a doped region,
Doped with impurity in the doped region, and the polarity of the conducting currier of main body and the polarity of the signal of telecommunication are identical in the doped region.
18. methods for preventing signal attenuation as claimed in claim 17, it is characterised in that the material of the impurity being doped is
III or V races material.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/885,656 US9506777B2 (en) | 2013-03-08 | 2015-10-16 | Micro-electromechanical apparatus having signal attenuation-proof function, and manufacturing method and signal attenuation-proof method thereof |
| US14/885,656 | 2015-10-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106586941A true CN106586941A (en) | 2017-04-26 |
| CN106586941B CN106586941B (en) | 2019-02-05 |
Family
ID=58555618
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610399509.7A Expired - Fee Related CN106586941B (en) | 2015-10-16 | 2016-06-07 | The method of microelectromechanicdevices devices and its manufacturing method and the decaying of anti-stop signal |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106586941B (en) |
| TW (1) | TWI610879B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4746377A (en) * | 1985-03-08 | 1988-05-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with thermally oxidized insulating and arsenic diffusion layers |
| CN1821830A (en) * | 2005-02-16 | 2006-08-23 | 富士通株式会社 | Micro-oscillating element and method of making the same |
| US20080204153A1 (en) * | 2007-02-26 | 2008-08-28 | Yoshifumi Yoshida | Oscillator |
| US20110120221A1 (en) * | 2009-11-25 | 2011-05-26 | Seiko Epson Corporation | Mems sensor, method of manufacturing thereof, and electronic apparatus |
| CN104030231A (en) * | 2013-03-08 | 2014-09-10 | 先技股份有限公司 | Signal enhancement device and signal enhancement method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2990342B2 (en) * | 1996-03-15 | 1999-12-13 | ニッショー機器株式会社 | Uniaxial horizontal sensor |
| US5852878A (en) * | 1997-07-14 | 1998-12-29 | The Fredericks Company | Electrolytic tilt sensing device |
| FI111457B (en) * | 2000-10-02 | 2003-07-31 | Nokia Corp | Micromechanical structure |
| CN1332205C (en) * | 2004-07-19 | 2007-08-15 | 西北工业大学 | Single mass plate triaxial micro-mechanical accelerometer |
| CN102928793B (en) * | 2012-11-19 | 2015-03-25 | 中国科学院上海微系统与信息技术研究所 | Micromechanical magnetic field sensor and application thereof |
| TWI472002B (en) * | 2013-01-09 | 2015-02-01 | Mems apparatus |
-
2016
- 2016-06-03 TW TW105117683A patent/TWI610879B/en not_active IP Right Cessation
- 2016-06-07 CN CN201610399509.7A patent/CN106586941B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4746377A (en) * | 1985-03-08 | 1988-05-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with thermally oxidized insulating and arsenic diffusion layers |
| CN1821830A (en) * | 2005-02-16 | 2006-08-23 | 富士通株式会社 | Micro-oscillating element and method of making the same |
| US20080204153A1 (en) * | 2007-02-26 | 2008-08-28 | Yoshifumi Yoshida | Oscillator |
| US20110120221A1 (en) * | 2009-11-25 | 2011-05-26 | Seiko Epson Corporation | Mems sensor, method of manufacturing thereof, and electronic apparatus |
| CN104030231A (en) * | 2013-03-08 | 2014-09-10 | 先技股份有限公司 | Signal enhancement device and signal enhancement method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI610879B (en) | 2018-01-11 |
| TW201714817A (en) | 2017-05-01 |
| CN106586941B (en) | 2019-02-05 |
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