CN106571795A - SiC BJT proportion drive circuit based on junction temperature and current feedback, control method thereof - Google Patents
SiC BJT proportion drive circuit based on junction temperature and current feedback, control method thereof Download PDFInfo
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- CN106571795A CN106571795A CN201610987303.6A CN201610987303A CN106571795A CN 106571795 A CN106571795 A CN 106571795A CN 201610987303 A CN201610987303 A CN 201610987303A CN 106571795 A CN106571795 A CN 106571795A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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Abstract
The invention discloses a SiC BJT proportion drive circuit based on junction temperature and current feedback, and a control method thereof; the SiC BJT proportion drive circuit comprises a stable state low-loss drive circuit, a dynamic rapid switch circuit and a feedback control circuit; in the control method, the stable state base electrode drive current is commonly determined by the collector electrode current size and silicon carbide bipolar transistor junction temperature, and the stable state base electrode drive current size can be dynamically changed by real time feedbacks. Compared with an existing proportion drive circuit, the SiC BJT proportion drive circuit combines SiC BJT device characteristics and considers temperature influences on SiC BJT current gains, thus reasonably setting the base electrode drive current allowance, and reducing stable state drive losses.
Description
Technical field
The present invention relates to be based on the SiC BJT ratios drive circuits and its control method of junction temperature and current feedback, belong to electricity
Power technical field of electronic control.
Background technology
With the rise of silicon carbide power device, bipolar transistor has regained the concern of developer in the industry.SiC
BJT has that conducting resistance is low, switching speed fast, high temperature resistant, be easy to the advantages such as parallel connection, is a kind of big electricity of very promising high pressure
Stream power device.
But SiC BJT are current mode power device, need steady-state current to maintain its conducting state.Reducing drive loss is
One important application bottleneck of SiC BJT, and loss when stable state is turned in drive loss accounts for the ratio of total drive loss most
Greatly.There is scholar to be applied to 6A SiC BJT power tubes to be tested in 2kW boost changers, discovery is in switching frequency
During 50kHz, steady-state loss accounts for the 75% of total drive loss；When switching frequency is 100kHz, steady-state loss accounts for total drive loss
63%；When switching frequency is 200kHz, steady-state loss accounts for the 47% of total drive loss.Therefore, drive to reduce stable state
Loss, the mode that adoption rate drives in pertinent literature carries out the driving of power tube.
Ratio driving is that the size of ideal base drive current changes with controlled quentity controlled variable dynamic.Darlington connects and transformator method is early
Phase is applied to two kinds of typical driving methods of SiC BJT, but due to device performance difference, when both approaches are used in SiC
Many problems occur during BJT occasions.The conduction voltage drop of Darlington connection breaker in middle pipe will increase nearly 3V, transformer scheme
Stray inductance can be introduced in driving circuit, in the application scenario of high current speed-sensitive switch voltage jump will be caused, it is switched
Performance has a great impact.Fig. 1 show existing improved ratio drive scheme, and the driving is by a series of parallel resistances and switchs
Series connection.Each resistance is connected with a switch, thus can control to drive electricity with opening by the closure of controlling switch
The size of resistance, so as to realize controlling the purpose of ideal base drive current size.
Type of drive above is to drive the angle for affecting from collector current to base current, considers temperature
Impact of the degree to SiC BJT.The current gain of SiC BJT is negative temperature characteristic, with GeneSiC companies model GA06JT12-
As a example by 247 SiC BJT.Fig. 2 is the relation curve of the current gain with junction temperature of the power tube, and when junction temperature is 25 DEG C, electric current increases
Benefit about 59, when junction temperature rises to 175 DEG C, current gain is reduced to 35.In order to ensure at different temperatures SiC BJT can be tieed up
Conducting is held, the determination of ideal base drive current typically takes corresponding current gain under maximum junction temperature.However, in many applied fields
Close, such setting driving current allowance is larger, brings many unnecessary drive loss.
Accordingly, it would be desirable to seek the ratio drive scheme that a kind of consideration junction temperature affects, make the driving current of base stage can be with dynamic
Change with junction temperature and collector current dynamic, driving current allowance is rationally set, reduce drive loss.
The content of the invention
The technical problem to be solved is：SiC BJT ratios based on junction temperature and current feedback are provided and drive electricity
Road and its control method, not only can control ideal base drive current size by collector current, and can pass through junction temperature control
Driving current processed, makes driving current maintain in the range of less safety allowance, reduces stable state drive loss.
The present invention is employed the following technical solutions to solve above-mentioned technical problem：
Based on junction temperature and the SiC BJT ratio drive circuits of current feedback, including the low damage of dynamic fast switching circuit, stable state
Drive circuit and feedback control circuit；The input termination high voltage power supply of the dynamic fast switching circuit, output termination SiC
BJT base stages；The low input termination low-tension supply for damaging drive circuit of stable state, output termination SiC BJT base stages；Feedback control circuit
Input connects respectively SiC BJT collector currents and junction temperature measurement point, the low damage drive circuit of output termination stable state.
Used as a kind of preferred version of circuit of the present invention, the dynamic fast switching circuit includes high-pressure side first switch
Pipe, high-pressure side second switch pipe, resistance, storage capacitor；The high-pressure side first switch pipe one terminates high voltage power supply, the other end point
Do not connect one end, resistance one end of high-pressure side second switch pipe；Another termination storage capacitor one end of resistance, another termination of storage capacitor
SiC BJT base stages；The ground of another termination high voltage power supply of high-pressure side second switch pipe.
As a kind of preferred version of circuit of the present invention, the stable state is low damage drive circuit include rearrangeable switch pipe in parallel and
Resistance circuit network, low-pressure side first switch pipe, low-pressure side second switch pipe, antireflux diode；The rearrangeable switch in parallel
Pipe and resistance circuit network include multiple branch roads in parallel, and each one steadying resistance of route and a switch are in series；
Another termination low-tension supply of each steadying resistance, one end of another termination low-pressure side first switch pipe of each switch, each switch
On or off is by feedback control circuit control；The other end of low-pressure side first switch pipe takes over control respectively the sun of reflux diode
Pole, one end of low-pressure side second switch pipe；The ground of another termination low-tension supply of low-pressure side second switch pipe；Antireflux diode
Negative electrode connect the other end of storage capacitor, SiC BJT base stages respectively.
Based on junction temperature and the control method of the SiC BJT ratio drive circuits of current feedback, the control method is concrete such as
Under：The relation table between the current gain of SiC BJT and its junction temperature and collector current is pre-set in feedback control circuit；
The collector current and junction temperature of real-time sampling SiC BJT, switchs to collector current signal and junction temperature signal the signal of telecommunication and feeds back
To feedback control circuit, real-time current gain is calculated, leading for switching tube is determined from above-mentioned relation table according to current gain
Logical quantity, the size of real-time regulation stable state ideal base drive current.
Used as a kind of preferred version of the inventive method, the control method is comprised the following steps that：
In the moment that SiC BJT are opened：Closed high side first switch pipe, by dynamic fast switching circuit SiC is provided
The base current of BJT conductings；
After SiC BJT are opened：Closed low side first switch pipe, from rearrangeable switch pipe in parallel and resistance circuit network to
SiC BJT provide stable state ideal base drive current；
When SiC BJT are turned off：Shut-off high-pressure side first switch pipe, low-pressure side first switch pipe, closed high side second
Switching tube, storage capacitor is discharged through resistance and high-pressure side second switch pipe.
The present invention adopts above technical scheme compared with prior art, with following technique effect：
1st, the present invention proposes a kind of based on junction temperature and the SiC BJT ratio drive circuits of current feedback, turn-on and turn-off wink
The driving current of state is produced by dynamic fast switching circuit, it is ensured that the high switching speed of bipolar transistor；Stable state conducting is driven
Streaming current is produced by the low drive circuit that damages of stable state, reduces stable state drive loss.
2nd, the present invention can be under the premise of speed-sensitive switch, the current gain characteristic of silicon carbide bipolar transistor, surely
State ideal base drive current adjusts the size of stable state ideal base drive current by collector current and junction temperature feedback co- controlling, dynamic,
Driving current is maintained in the range of less safety allowance, reduce stable state drive loss.
Description of the drawings
Fig. 1 is the dual power supply drive circuit figure of proportional driving in background technology of the invention.
Fig. 2 is the graph of relation of the current gain of SiC BJT power tubes and junction temperature in background technology of the invention.
Fig. 3 is the present invention based on junction temperature and the SiC BJT ratio drive circuit figures of current feedback.
Fig. 4 is that proportional controlling switch pipe turns on quantity table in specific embodiments of the present invention.
Fig. 5 is the switching sequence figure of specific embodiments of the present invention breaker in middle pipe.
Fig. 6 is SiC BJT ideals ideal base drive current figure in specific embodiments of the present invention.
Wherein, VCCLFor low-tension supply；RB1、RB2、…、RBn、RBHIt is steadying resistance；RSW1、RSW2、…、RSWnIt is out
Close；S1L、S2LThe respectively switching tube of low-pressure side first, second；D1For antireflux diode；VCCHFor high voltage power supply；S1H、S2HRespectively
For the switching tube of high-pressure side first, second；CBHFor storage capacitor；B, C, E are respectively base stage, colelctor electrode, the emitter stage of SiC BJT.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the drawings, wherein ad initio
Same or similar element is represented to same or similar label eventually or the element with same or like function.Below by ginseng
The embodiment for examining Description of Drawings is exemplary, is only used for explaining the present invention, and is not construed as limiting the claims.
Based on the SiC BJT ratio drive circuits that junction temperature and collector current feed back, including：Dynamic fast switching circuit,
Stable state is low to damage drive circuit and feedback control circuit.Dynamic fast switching circuit one terminates high voltage power supply, another termination carbonization
Silicon bipolar transistor base stage.Stable state is low to damage the termination low-tension supply of drive circuit one, another termination silicon carbide bipolar transistor
Base stage, the low drive circuit that damages of stable state also includes rearrangeable switch pipe in parallel and resistance circuit network, by the switch and electricity of multiple series connection
Resistance branch circuit parallel connection composition.Feedback control circuit input termination silicon carbide bipolar transistor collector and junction temperature measurement point, output
Termination rearrangeable switch pipe in parallel and resistance circuit network.Drive circuit opens branch road using high-voltage high-speed and low pressure ratio drives electricity
The dual power supply form that road combines, can simultaneously meet that drive loss is little and the fast requirement of switching speed.
By the switching tube S of high-pressure side first, second1H、S2H, storage capacitor CBHWith resistance RBHThe dynamic high-speed switch electricity of composition
Road is as shown in Figure 3：High-pressure side first switch pipe S1HOne termination high voltage power supply VCCH, high-pressure side first switch pipe S1HThe other end and height
Pressure side second switch pipe S2HOne end, resistance RBHOne end is connected, resistance RBHThe other end and storage capacitor CBHOne pole connects, high-pressure side
Second switch pipe S2HThe other end is grounded, storage capacitor CBHAnother pole connects silicon carbide bipolar transistor (SiC BJT) base stage.
By the switching tube S of low-pressure side first, second1L、S2L, antireflux diode D1, rearrangeable switch pipe in parallel and resistance circuit
Network RB1、RB2、…、RBn, RSW1、RSW2、…、RSWnThe low damage drive circuit of stable state of composition is as shown in Figure 3：Low-pressure side first switch
Pipe S1LThe output of one termination rearrangeable switch pipe in parallel and resistance circuit network, the other end and low-pressure side second switch pipe S2LOne end,
Antireflux diode D1Anode is connected, antireflux diode D1Negative electrode and storage capacitor CBHOne end, silicon carbide bipolar transistor
Base stage is connected.
Rearrangeable switch pipe wherein in parallel and resistance circuit network are by RBiAnd RSWiThe series arm of composition is formed in parallel, wherein i
For parallel branch number, span is 1～n, and the value of n discrete precision as needed determines that the present invention is by taking n=7 as an example
Illustrate, i.e. a total of 8 grades of stable state ideal base drive current.
Fig. 5 show the switching sequence figure of the proportional drive circuit fed back based on junction temperature and collector current, n generations in figure
The quantity of switching tube is turned in telogenesis ratio driving network, the operation principle of drive circuit is：
SiC BJT are opened moment, closed high side first switch pipe S1H, using high voltage power supply VCCHFor drive circuitry,
Direct impulse electric current as shown in Figure 6 is provided to SiC BJT, makes SiC BJT open-minded rapidly, IB(m)When opening for SiC BJT
Maximum surge current value, IB(av)For SiC BJT conducting states when average current；Antireflux diode D1In switch S1HClosure
Moment prevents reflux from entering the low damage loop of stable state.
After SiC BJT are opened, closed low side first switch pipe S1L, using by low-pressure side first switch pipe S1L, afterflow two
Pole pipe D1Offer stable state ideal base drive current proportional with rearrangeable switch pipe in parallel and resistance circuit network, turns on the number of switching tube
Amount is determined by feedback control circuit.Collector current and junction temperature signal that feedback circuit is obtained by sampling, it is true according to Fig. 4 forms
Surely quantity is turned on, realizes adjusting the purpose of base current, reduce base stage stable state drive loss.
When SiC BJT are turned off, high-pressure side first switch pipe S1H, low-pressure side first switch pipe S1LDisconnect, high-pressure side second is opened
Close pipe S2H, low-pressure side second switch pipe S2LClosure, SiC BJT base currents pass through high-pressure side second switch pipe S2HIt is rapid to reduce
To zero, turn-off speed is accelerated in speed-up capacitor electric discharge, reduces turn-off power loss.Storage capacitor CBHUpper voltage is opened by high-pressure side second
Close pipe S2HIt is down to zero.
Wherein, feedback control circuit can be realized using DSP, first according to selected silicon carbide bipolar transistor electricity
Flow enhancement characteristic formulates rearrangeable switch pipe conducting table in parallel, as shown in figure 4, being provided with the higher limit and knot of collector current in table
The higher limit of temperature.The silicon carbide bipolar transistor collector current I that in dsp control circuit is obtained according to feedbackCWith junction temperature Tj
Signal, calculates real-time current gain, and the switching tube quantity for needing to turn in rearrangeable switch pipe in parallel, table are determined by tabling look-up
Middle numeral represents binary system, and 000 representative is all not turned on, and 111 represent 7 switching tubes of conducting.
It can be seen that, when SiC BJT are opened, using high voltage power supply VCCHPower supply is accelerated open-minded with providing larger pulse current
Process；Low-tension supply V is adopted when SiC BJT stable states are turned onCCLBy junction temperature feedback and collector current feedback control switch pipe
The quantity of conducting, dynamic changes the stable state conducting electric current of silicon carbide bipolar transistor base.
Above example technological thought only to illustrate the invention, it is impossible to which protection scope of the present invention is limited with this, it is every
According to technological thought proposed by the present invention, any change done on the basis of technical scheme, the scope of the present invention is each fallen within
Within.
Claims (5)
1. based on junction temperature and the SiC BJT ratio drive circuits of current feedback, it is characterised in that including dynamic high-speed switch electricity
Road, the low damage drive circuit of stable state and feedback control circuit；The input termination high voltage power supply of the dynamic fast switching circuit, it is defeated
Go out to terminate SiC BJT base stages；The low input termination low-tension supply for damaging drive circuit of stable state, output termination SiC BJT base stages；Feedback
The input of control circuit connects respectively SiC BJT collector currents and junction temperature measurement point, the low damage drive circuit of output termination stable state.
2. according to claim 1 based on junction temperature and the SiC BJT ratio drive circuits of current feedback, it is characterised in that institute
Dynamic fast switching circuit is stated including high-pressure side first switch pipe, high-pressure side second switch pipe, resistance, storage capacitor；The height
Pressure side first switch pipe one terminates high voltage power supply, and the other end connects respectively one end of high-pressure side second switch pipe, resistance one end；Resistance
Another termination storage capacitor one end, another termination SiC BJT base stages of storage capacitor；Another termination of high-pressure side second switch pipe is high
The ground of voltage source.
3. according to claim 2 based on junction temperature and the SiC BJT ratio drive circuits of current feedback, it is characterised in that institute
Stating the low drive circuit that damages of stable state includes rearrangeable switch pipe in parallel and resistance circuit network, low-pressure side first switch pipe, low-pressure side the
Two switching tubes, antireflux diode；The rearrangeable switch pipe in parallel and resistance circuit network include multiple branch roads in parallel, each
Prop up one steadying resistance of route and a switch is in series；Another termination low-tension supply of each steadying resistance, respectively switch is another
One end of one termination low-pressure side first switch pipe, the on or off of each switch is by feedback control circuit control；Low-pressure side first
The other end of switching tube takes over control respectively the anode of reflux diode, one end of low-pressure side second switch pipe；Low-pressure side second switch
The ground of another termination low-tension supply of pipe；The negative electrode of antireflux diode connects respectively the other end of storage capacitor, SiC BJT bases
Pole.
4. based on junction temperature and the control method of the SiC BJT ratio drive circuits of current feedback, it is characterised in that the controlling party
Method is specific as follows：Pre-set in feedback control circuit between the current gain of SiC BJT and its junction temperature and collector current
Relation table；The collector current and junction temperature of real-time sampling SiC BJT, by collector current signal and junction temperature signal telecommunications is switched to
Number and feed back to feedback control circuit, calculate real-time current gain, determined from above-mentioned relation table according to current gain and opened
Close the conducting quantity of pipe, the size of real-time regulation stable state ideal base drive current.
5., according to claim 4 based on junction temperature and the control method of the SiC BJT ratio drive circuits of current feedback, it is special
Levy and be, the control method is comprised the following steps that：
In the moment that SiC BJT are opened：Closed high side first switch pipe, provides SiC BJT and leads by dynamic fast switching circuit
Logical base current；
After SiC BJT are opened：Closed low side first switch pipe, from rearrangeable switch pipe in parallel and resistance circuit network to SiC
BJT provides stable state ideal base drive current；
When SiC BJT are turned off：Shut-off high-pressure side first switch pipe, low-pressure side first switch pipe, closed high side second switch
Pipe, storage capacitor is discharged through resistance and high-pressure side second switch pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610987303.6A CN106571795A (en) | 2016-11-10 | 2016-11-10 | SiC BJT proportion drive circuit based on junction temperature and current feedback, control method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610987303.6A CN106571795A (en) | 2016-11-10 | 2016-11-10 | SiC BJT proportion drive circuit based on junction temperature and current feedback, control method thereof |
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| CN106571795A true CN106571795A (en) | 2017-04-19 |
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| CN201610987303.6A Pending CN106571795A (en) | 2016-11-10 | 2016-11-10 | SiC BJT proportion drive circuit based on junction temperature and current feedback, control method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112311374A (en) * | 2020-10-23 | 2021-02-02 | 华为技术有限公司 | Switching circuit |
| CN112556868A (en) * | 2020-10-26 | 2021-03-26 | 南京航空航天大学 | SiC MOSFET junction temperature detection method based on combined thermosensitive electrical parameter sensitivity enhancement |
| CN114598136A (en) * | 2022-03-09 | 2022-06-07 | 小米汽车科技有限公司 | Switch control circuit, control method thereof, switch circuit and electric vehicle |
| CN114614803A (en) * | 2022-05-11 | 2022-06-10 | 合肥安赛思半导体有限公司 | Multi-stage SiC-MOSFET drive circuit and control method |
| WO2024188027A1 (en) * | 2023-03-16 | 2024-09-19 | 杰华特微电子股份有限公司 | Switch drive integrated circuit and switch drive setting method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112311374A (en) * | 2020-10-23 | 2021-02-02 | 华为技术有限公司 | Switching circuit |
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| CN114598136A (en) * | 2022-03-09 | 2022-06-07 | 小米汽车科技有限公司 | Switch control circuit, control method thereof, switch circuit and electric vehicle |
| CN114614803A (en) * | 2022-05-11 | 2022-06-10 | 合肥安赛思半导体有限公司 | Multi-stage SiC-MOSFET drive circuit and control method |
| CN114614803B (en) * | 2022-05-11 | 2022-08-05 | 合肥安赛思半导体有限公司 | Multi-stage SiC-MOSFET drive circuit and control method |
| WO2024188027A1 (en) * | 2023-03-16 | 2024-09-19 | 杰华特微电子股份有限公司 | Switch drive integrated circuit and switch drive setting method |
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