CN106568230B - A kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet - Google Patents
A kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet Download PDFInfo
- Publication number
- CN106568230B CN106568230B CN201610904788.8A CN201610904788A CN106568230B CN 106568230 B CN106568230 B CN 106568230B CN 201610904788 A CN201610904788 A CN 201610904788A CN 106568230 B CN106568230 B CN 106568230B
- Authority
- CN
- China
- Prior art keywords
- metal
- semiconductor refrigeration
- refrigeration sheet
- cathode
- ingaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
- F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
- F25B2321/02—Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
- F25B2321/025—Removal of heat
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
- F25B2321/02—Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
- F25B2321/025—Removal of heat
- F25B2321/0251—Removal of heat by a gas
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B2321/00—Details of machines, plants or systems, using electric or magnetic effects
- F25B2321/02—Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
- F25B2321/025—Removal of heat
- F25B2321/0252—Removal of heat by liquids or two-phase fluids
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention is a kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet, electrical connection and thermal conduction characteristic using InGaAs cathode and metal sealing ring, semiconductor refrigeration sheet carries out effective refrigeration to InGaAs cathode by metal fin and the metal sealing ring being close to therewith, and the heat dissipation in the hot face of semiconductor refrigeration sheet is carried out by metal heat sink and fan or water circle device.Advantage: in device practical work process, heat, which can pass sequentially through cathodic metal sealing ring, metal fin, semiconductor refrigeration sheet, metal heat sink, fan or water circle device and be effectively conducted, at InGaAs cathode sheds, on the one hand it can significantly reduce the dark emission level when work of device room temperature, on the other hand device homogeneous tube dark current caused by secretly emit raising due to cathode can be significantly inhibited under high-temperature work environment to sharply increase, to expand device hot operation range.
Description
Technical field
The present invention relates to a kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet, can be widely applied
In the refrigeration of various vacuum photocathodes.Belong to electrovacuum technical field of photoelectric detection.
Background technique
Vacuum Photoelectric Detectors part is an important branch in photodetection field, and the type device can be widely applied to state
The numerous areas such as anti-equipment, aerospace, instrument and meter and Medical Devices, as UV warming, laser radar, lll night vision,
Corona detection etc..With the continuous promotion of application demand, the sensitivity of two traditional generation alkali compound photocathodes increasingly meets
Not actual demand, and with the development of semiconductor material technology, traditional two generation cathodes are or will be by with gallium nitride
(GaN), GaAs (GaAs), gallium arsenic phosphide (GaAsP), indium gallium arsenic (InGaAs) etc. are three generations's negative electron affinity (NEA) of representative
(NEA) high-quantum efficiency cathode is substituted.
InGaAs is a kind of ternary alloy three-partalloy semiconductor material, and InGaAs cathode can be obtained by adjusting In component compared with GaAs light
The electric broader response wave band of cathode, to obtain 0.6 μm ~ 1.7 μm of response, service band range can be completely covered visible
Light and night sky light energy.And InGaAs cathode usually need to help structure to realize high-quantum efficiency using field.The extension of threshold wave-length, must
Must reduce the band gap of semiconductor optical absorption layer, the reduction of band gap and the effect of extra electric field, make field help InGaAs photoelectricity because it is dark
The dark current of electric current ratio GaAs NEA photocathode is big.
By the analysis in dark current source, it can be found that field helps the dark current of InGaAs photocathode mainly by " hot hole "
Ionization by collision causes.While the electric field that reverse biased generates in the semiconductors makes electronics obtain higher-energy, but also by Xiao
The special base gesture hole of heap of stone being injected in vivo obtains higher energy.This part " hot hole " and lattice collisions, ionize out electronics-sky
Cave pair.Since the electronics that ionization by collision generates has higher energy in semiconductor conduction band, this part electronics is to vacuum
Heat emission constitutes the important component that field helps InGaAs photocathode dark current.
Therefore, it in the actual use of InGaAs photocathode, is highly desirable to carry out effective refrigeration to it significantly to drop
Its low dark emitting performance, especially under hot operation state, " hot hole " and lattice collisions are more severe, and dark transmitting also will significantly
It improves.
Summary of the invention
Proposed by the present invention is a kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet, and the purpose is to benefits
It electrically and is led hot linked metal sealing ring with photocathode and adds air-cooled or water cooling plant to realize by semiconductor refrigeration sheet and have
Refrigeration is imitated, the heat emission of InGaAs cathode is effectively reduced, expands device hot operation range.
Technical solution of the invention: a kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet, benefit
Electrical connection and thermal conduction characteristic with InGaAs cathode and metal sealing ring, semiconductor refrigeration sheet by metal fin and with
The metal sealing ring of abutting effective refrigeration is carried out to InGaAs cathode, and the heat dissipation in the hot face of semiconductor refrigeration sheet is dissipated by metal
Hot device and fan or water circle device carry out.
Advantages of the present invention:
In device practical work process, heat can pass sequentially through cathodic metal sealing ring at InGaAs cathode, metal dissipates
Backing, semiconductor refrigeration sheet, metal heat sink, fan or water circle device, which are effectively conducted, to shed, and on the one hand can significantly reduce device
Dark emission level when part room temperature works, on the other hand can significantly inhibit under high-temperature work environment since cathode secretly emits raising
Caused by device homogeneous tube dark current sharply increase, to expand device hot operation range.
Detailed description of the invention
Fig. 1 is InGaAs photocathode chiller structural schematic diagram.
Fig. 2 is InGaAs photocathode chiller implementation example figure.
Fig. 3 is InGaAs photocathode and electrode schematic diagram.
Fig. 4 is 4 sectional view of metal fin.
Fig. 5 is 6 sectional view of metal heat sink.
Specific embodiment
A kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet, including InGaAs cathode 1, light window glass
2, metal sealing ring 3, metal fin 4, semiconductor refrigeration sheet 5, metal heat sink 6, fan or water circle device 7, insulating silicon
Glue 8, electrical connection and thermal conduction characteristic using InGaAs cathode 1 and metal sealing ring 3, semiconductor refrigeration sheet 5 are dissipated by metal
Backing 4 and the metal sealing ring 3 being close to therewith carry out effective refrigeration to InGaAs cathode 1, and the hot face of semiconductor refrigeration sheet 5
Heat dissipation is carried out by metal heat sink 6 and fan or water circle device 7.
The huyashi-chuuka (cold chinese-style noodles) of the semiconductor refrigeration sheet 5 should be close to metal fin 4, and hot face should be close to metal heat sink 6, Er Qieban
Coated with thermally conductive estersil between conductor refrigerating sheet 5 and metal fin 4 and between semiconductor refrigeration sheet 5 and metal heat sink 6,
To ensure good thermally conductive function.
Contact area outside 3 vacuum of metal sealing ring greatly if can be omitted metal fin 4 and semiconductor refrigeration sheet 5
It abuts directly on.
The electrical connection of InGaAs cathode 1 and metal sealing ring 3 and thermal conduction characteristic are by 1 outer edge metal of light window glass
Electrode realizes that the electrode material is nickel, chromium, copper, gold.
The metal fin 4 and metal heat sink 6 need to be made of the good copper of heating conduction or aluminum metallic material,
In order to effectively ensure the working efficiency of semiconductor refrigeration sheet 5, their peripheral diameter should be greater than photocathode light window glass 2 and half
The outer diameter of conductor refrigerating sheet 5.
The metal fin 4, semiconductor refrigeration sheet 5, metal heat sink 6 are both needed to be designed to central hole structure, and fan
Or the installation of water circle device 7 should also avoid cathode effective coverage, can normally be entered with ensuring that detector works normally optical signal
Penetrate photocathode.
The metal fin 4, semiconductor refrigeration sheet 5,6 junction inner peripheral of metal heat sink need coating >=2mm thick
Insulation silica gel 8, to prevent 5 condensate of semiconductor refrigeration sheet from causing high pressure and metal on metal sealing ring 3 and metal fin 4
It strikes sparks between low pressure on radiator 6.
The semiconductor refrigeration sheet 5 allows muti-piece to cascade to enhance refrigerating capacity, and semiconductor refrigeration sheet 5 is cold when cascade
Face need to be close to the hot face of adjacent semiconductor refrigerating sheet 5 by conduction estersil.
Technical solution of the present invention is further described with reference to the accompanying drawing:
Attached drawing, a kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet are compareed, structure includes
InGaAs cathode 1, light window glass 2, metal sealing ring 3, metal fin 4, semiconductor refrigeration sheet 5, metal heat sink 6, fan
Or water circle device 7, insulation silica gel 8.Wherein, metal fin 4 is directly close to metal sealing ring 3, and semiconductor refrigeration sheet 5 is then
Metal fin 4, hot face connection metal heat sink 6 are connected with huyashi-chuuka (cold chinese-style noodles) respectively by conduction estersil, fan or water circle device 7 are then
It is mounted on metal heat sink 6, metal fin 4, semiconductor refrigeration sheet 5 and the coating of 6 junction inner peripheral of metal heat sink >=
The insulation silica gel 8 of 2mm thickness, to prevent high voltage arc phenomenon caused by 5 condensate of semiconductor refrigeration sheet.
Metal fin 4, semiconductor refrigeration sheet 5, metal heat sink 6 need to be designed to hollow structure, and fan or water recycle
The installation of device 7 should also avoid cathode effective coverage, to ensure that detector works normally optical signal energy normal incidence photoelectricity yin
Pole.The electrical connection of InGaAs cathode and metal sealing ring and thermal conduction characteristic are real by light window glass outer edge cr-au electrode
It is existing, as shown in Figure 3.
Embodiment, as shown in Fig. 2, with the InGaAs cathode luminous multiplier tube chiller of Φ 10mm effective diameter:
(1) according to the dimensioned metal fin 4 of light window glass 2 and metal sealing ring 3, outer diameter Φ 32mm, mesoporous
Internal diameter Φ 10mm, to ensure the cathode significant surface of optical signal energy normal incidence Φ 10mm.Step snugly blocks respectively
The outer diameter of light window glass 2 and metal sealing ring 3, height (not including step) 2 ~ 5mm.The specific structure is shown in FIG. 3, material therefor
For the good red copper of heating conduction；
(2) processing aluminium radiator, size: 36 × 36 × 36mm uses rib structure to expand heat dissipation area, and tooth is high
33mm, transverse tooth thickness 1.7mm, space width 2mm, mesoporous Φ 10mm, to ensure the cathode significant surface of optical signal energy normal incidence Φ 10mm.
Buying internal diameter Φ 10mm, the belt refrigerating sheet of outer diameter Φ 26mm, thickness 3.6mm, and by it after both ends of the surface coated with thermally conductive estersil
Huyashi-chuuka (cold chinese-style noodles) is close to metal fin 4, and metal heat sink 6 is close in hot face；
(3) high air output fan 7 is installed in 6 side edge of metal heat sink, gold is fixed in by 7 surrounding screw of fan
Belong on radiator 6；
(4) in 6 junction inner peripheral coating of metal fin 4, semiconductor refrigeration sheet 5 and metal heat sink >=2mm thickness
Insulate silica gel 8, to prevent high voltage arc phenomenon caused by 5 condensate of semiconductor refrigeration sheet.
When chiller works normally, respectively semiconductor refrigeration sheet 5 and fan 7 provide power supply.Wherein, conductor refrigeration
Piece 5 maximum working voltage 5.78V, maximum operating currenbt 3A, fan 7 rated operational voltage 12V, electric current 0.1A.Carry out related temperature
Degree experiments have shown that, under normal temperature state, the work of the device can make photocathode secretly emit reduction at least one magnitude；At 50 DEG C
Under the condition of high temperature, the device can make photocathode secretly emit maintain room temperature level.
Claims (1)
1. a kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet, including InGaAs cathode, light window glass, gold
Belong to sealing ring, metal fin, semiconductor refrigeration sheet, metal heat sink, fan or water circle device, insulation silica gel, feature
It is: passes through heat dissipation metal using the electrical connection and thermal conduction characteristic, semiconductor refrigeration sheet of InGaAs cathode and metal sealing ring
Piece and the metal sealing ring being close to therewith carry out effective refrigeration to InGaAs cathode, and the heat dissipation in the hot face of semiconductor refrigeration sheet is logical
It crosses metal heat sink and fan or water circle device carries out；
The huyashi-chuuka (cold chinese-style noodles) of the semiconductor refrigeration sheet should be close to metal fin, and hot face should be close to metal heat sink, and semiconductor causes
Cold coated with thermally conductive estersil between metal fin and between semiconductor refrigeration sheet and metal heat sink is good to ensure
Thermally conductive function；Contact area outside metal sealing ring vacuum greatly if can be omitted metal fin and semiconductor refrigeration sheet
It abuts directly on；
The electrical connection of the InGaAs cathode and metal sealing ring and thermal conduction characteristic are by light window glass outer edge metal electricity
Realize that the electrode material is nickel, chromium, copper, gold in pole；
The metal fin and metal heat sink need to be made of the good copper of heating conduction or aluminum metallic material, in order to have
Effect ensures the working efficiency of semiconductor refrigeration sheet, their peripheral diameter should be greater than the outer of light window glass and semiconductor refrigeration sheet
Diameter；
The metal fin, semiconductor refrigeration sheet, metal heat sink are both needed to be designed to central hole structure, and fan or water circulation
The installation of device should also avoid cathode effective coverage, to ensure that detector works normally optical signal energy normal incidence photoelectricity yin
Pole；
The metal fin, semiconductor refrigeration sheet, metal heat sink junction inner peripheral need coating >=2mm thickness insulating silicon
Glue, to prevent semiconductor refrigeration sheet condensate from causing low pressure in the high pressure and metal heat sink of metal sealing ring and heat dissipation metal on piece
Between strike sparks；
The semiconductor refrigeration sheet allows muti-piece to cascade to enhance refrigerating capacity, and the huyashi-chuuka (cold chinese-style noodles) of semiconductor refrigeration sheet need to lead to when cascade
Cross the hot face that conduction estersil is close to adjacent semiconductor refrigerating sheet；
Its production method, includes the following steps:
With the InGaAs cathode luminous multiplier tube chiller of Φ 10mm effective diameter:
(1) according to the dimensioned metal fin of light window glass and metal sealing ring, outer diameter Φ 32mm, mesoporous internal diameter Φ
10mm, to ensure the cathode significant surface of optical signal energy normal incidence Φ 10mm；Step snugly blocks optical window glass respectively
The outer diameter of glass and metal sealing ring, 2 ~ 5mm of height；Material therefor is the good red copper of heating conduction；
(2) processing aluminium radiator, size: 36 × 36 × 36mm uses rib structure to expand heat dissipation area, the high 33mm of tooth,
Transverse tooth thickness 1.7mm, space width 2mm, mesoporous Φ 10mm, to ensure the cathode significant surface of optical signal energy normal incidence Φ 10mm；Buying
Internal diameter Φ 10mm, the belt refrigerating sheet of outer diameter Φ 26mm, thickness 3.6mm, and by its huyashi-chuuka (cold chinese-style noodles) after both ends of the surface coated with thermally conductive estersil
It is close to metal fin, metal heat sink is close in hot face；
(3) high air output fan is installed in metal heat sink side edge, heat dissipation metal is fixed in by fan surrounding screw
On device；
(4) in metal fin, semiconductor refrigeration sheet and metal heat sink junction inner peripheral coating >=2mm thickness insulating silicon
Glue, to prevent high voltage arc phenomenon caused by semiconductor refrigeration sheet condensate；
When chiller works normally, respectively semiconductor refrigeration sheet and fan provide power supply；Wherein, semiconductor refrigeration sheet is maximum
Operating voltage 5.78V, maximum operating currenbt 3A, fan rated operational voltage 12V, electric current 0.1A；Carry out associated temperature and tests table
Bright, under normal temperature state, the work of the device, which can be such that photocathode secretly emits, reduces at least one magnitude；In 50 DEG C of conditions of high temperature
Under, the device can make photocathode secretly emit maintain room temperature level；
In device practical work process, heat can pass sequentially through metal sealing ring, metal fin, partly lead at InGaAs cathode
Body refrigerating sheet, metal heat sink, fan or water circle device, which are effectively conducted, to shed, and on the one hand can significantly reduce the work of device room temperature
When dark emission level, on the other hand can be significantly inhibited under high-temperature work environment due to cathode secretly emit raising caused by device
Part homogeneous tube dark current sharply increases, to expand device hot operation range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610904788.8A CN106568230B (en) | 2016-10-18 | 2016-10-18 | A kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610904788.8A CN106568230B (en) | 2016-10-18 | 2016-10-18 | A kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106568230A CN106568230A (en) | 2017-04-19 |
| CN106568230B true CN106568230B (en) | 2019-07-12 |
Family
ID=58533025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610904788.8A Active CN106568230B (en) | 2016-10-18 | 2016-10-18 | A kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106568230B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113488359A (en) * | 2021-06-08 | 2021-10-08 | 电子科技大学 | Preparation method of refrigeration type GaN electron source used in ultrahigh vacuum system |
| CN117752293A (en) * | 2023-12-29 | 2024-03-26 | 哈尔滨海鸿基业科技发展有限公司 | Near infrared two-region fluorescence abdominal cavity endoscope device based on ICG |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000188430A (en) * | 1998-12-21 | 2000-07-04 | Nec Corp | Temperature control unit |
| CN201015121Y (en) * | 2007-02-05 | 2008-01-30 | 黄龙 | Water-cooling heat radiator of semiconductor refrigeration system |
| CN101192491A (en) * | 2006-11-29 | 2008-06-04 | 浜松光子学株式会社 | Semiconductor photocathode |
| CN102646748A (en) * | 2012-04-23 | 2012-08-22 | 上海交通大学 | Infrared laser-infrared detector integrated device |
| CN103500749A (en) * | 2013-10-10 | 2014-01-08 | 中国科学院上海技术物理研究所 | Thermoelectric refrigerating ultra-long linear array InGaAs detector encapsulation structure |
| CN104748858A (en) * | 2015-03-18 | 2015-07-01 | 北京空间机电研究所 | InGaAs shortwave infrared detector signal processing system |
-
2016
- 2016-10-18 CN CN201610904788.8A patent/CN106568230B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000188430A (en) * | 1998-12-21 | 2000-07-04 | Nec Corp | Temperature control unit |
| CN101192491A (en) * | 2006-11-29 | 2008-06-04 | 浜松光子学株式会社 | Semiconductor photocathode |
| CN201015121Y (en) * | 2007-02-05 | 2008-01-30 | 黄龙 | Water-cooling heat radiator of semiconductor refrigeration system |
| CN102646748A (en) * | 2012-04-23 | 2012-08-22 | 上海交通大学 | Infrared laser-infrared detector integrated device |
| CN103500749A (en) * | 2013-10-10 | 2014-01-08 | 中国科学院上海技术物理研究所 | Thermoelectric refrigerating ultra-long linear array InGaAs detector encapsulation structure |
| CN104748858A (en) * | 2015-03-18 | 2015-07-01 | 北京空间机电研究所 | InGaAs shortwave infrared detector signal processing system |
Non-Patent Citations (2)
| Title |
|---|
| "InGaAs 探测器热电制冷方法研究";董长哲等;《航天返回与遥感》;20110831;第32卷(第4期);第53-58页 |
| "可见_近红外相应InGaAs光电倍增管";王旺平等;《光电子技术》;20150630;第35卷(第2期);第115-117页 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106568230A (en) | 2017-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3376437A (en) | Thermionic conversion means | |
| US9874316B2 (en) | Lighting assembly, a light source and a luminaire | |
| JP2017112088A (en) | Led vehicle headlight | |
| US20120019144A1 (en) | Led light emitting device | |
| CN106568230B (en) | A kind of InGaAs photocathode chiller based on semiconductor refrigeration sheet | |
| KR20120080380A (en) | Cooling unit and led lighting unit using ionic wind | |
| TW201422903A (en) | Thermoelectric generatorand thermoelectric generating system | |
| WO2018002732A1 (en) | An enclosure for lighting systems | |
| CN105444461B (en) | A kind of thermoelectric cooler | |
| JP2012064464A (en) | Field-emission light source | |
| CN100590353C (en) | High-power cluster light emitting diode lighting equipment of coupling high efficiency soaking/radiating module | |
| CN212057010U (en) | LED street lamp | |
| KR20090095301A (en) | Flat panel display apparatus | |
| CN220711917U (en) | Photodetector | |
| CN203950803U (en) | Luminescent device | |
| CN201599739U (en) | Multi-particle low-thermal-resistance LED tunnel lamp | |
| CN213905395U (en) | High stability LED encapsulates device | |
| CN220856607U (en) | Diode convenient to heat dissipation | |
| CN219553618U (en) | LED with good energy-saving effect | |
| CN111106099A (en) | High-power COB heat dissipation packaging structure | |
| CN205282444U (en) | X ray produces device | |
| CN208596674U (en) | Light-emitting diode encapsulation structure | |
| CN210891569U (en) | High-power light-emitting diode heat radiation structure | |
| CN210050728U (en) | Integrated heat radiation structure LED car lamp | |
| CN215259284U (en) | High-temperature-resistant LED lamp bead |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |