CN106563457B - A kind of preparation method of Cu oxide surface recombination cerium oxide layer materials - Google Patents
A kind of preparation method of Cu oxide surface recombination cerium oxide layer materials Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 49
- 230000006798 recombination Effects 0.000 title claims abstract description 26
- 238000005215 recombination Methods 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910000420 cerium oxide Inorganic materials 0.000 title claims abstract description 12
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 title claims abstract description 12
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims abstract description 28
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910003320 CeOx Inorganic materials 0.000 claims abstract description 25
- 239000011159 matrix material Substances 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 235000019441 ethanol Nutrition 0.000 claims description 10
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 229910000667 (NH4)2Ce(NO3)6 Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000013049 sediment Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
- 239000002131 composite material Substances 0.000 abstract description 8
- 238000006073 displacement reaction Methods 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 229910052684 Cerium Inorganic materials 0.000 abstract description 3
- 239000011259 mixed solution Substances 0.000 abstract description 3
- 238000011160 research Methods 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 2
- 239000012761 high-performance material Substances 0.000 abstract description 2
- 230000003993 interaction Effects 0.000 abstract description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 abstract 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 15
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 14
- 239000002245 particle Substances 0.000 description 11
- 239000002105 nanoparticle Substances 0.000 description 5
- -1 on this basis Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010189 synthetic method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000003643 water by type Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- XUAFEHRGKYJQCQ-UHFFFAOYSA-N [S].[O-][N+]#N Chemical class [S].[O-][N+]#N XUAFEHRGKYJQCQ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
- B01J23/83—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with rare earths or actinides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/86—Catalytic processes
- B01D53/8621—Removing nitrogen compounds
- B01D53/8625—Nitrogen oxides
- B01D53/8628—Processes characterised by a specific catalyst
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- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
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- B01J35/00—Catalysts, in general, characterised by their form or physical properties
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Abstract
A kind of preparation method of Cu oxide surface recombination cerium oxide layer materials is in water, alcohol or water-alcohol mixed solution, by the soluble Ce source compound and Cu that contain+4 valence oxidation state Ce elements (Ce (IV))2O matrix surface carries out redox displacement, obtains Cu2It O surface recombination cerium thin oxide layer (Ce(III) and Ce(IV) coexists and is denoted as CeOx) material new method, to sample be heat-treated then further obtain CuO surface recombination CeOxMaterial.This method feature is CeOxCan with molecular scale thin layer high dispersive, uniformly, be closely compound in Cu2O or CuO material surface；Properity is mainly by Ce element and Cu2O chemistry molar ratio determines, easily realizes series regulation, is 0.02-2.0 this application involves proportional region, research and application field to concern oxide composite structure or interfacial interaction, this method can provide reference for high performance material development.
Description
Technical field
The present invention relates to a kind of preparation methods of Cu oxide surface recombination cerium oxide material, belong to oxide solid-state table
The controlledly synthesis and associated materials application field of the microcosmic composite construction in interface.
Background technique
Relative to pure component material, solid-oxide multicomponent composite materials have superior physical and chemical performance, because
And many important applied fields for example photoelectric conversion, sensor, in terms of receive much attention.For these applications, material
Its surface and interface structure can be depended on, the scale of usual this surface and interface structure between 1-3 layers of solid-state material surface molecule or
In atomic layer level thickness scope, therefore one of the basic point effectively optimized to this kind of material property is to realize it microcosmic ruler
Spend the surface and interface structure regulating synthesis in scope.However, preparing two class main methods of oxide composite at present in this side
Face all has apparent defect: one kind is to be divided into matrix with a kind of group to support other components deposition thereon, and defect is to deposit
The uncontrollability of process causes the scale for supporting component and their distribution situations on matrix to be difficult to control, and is especially difficult
They are difficult to form effective table on a microscopic scale with less than the 3 layers uniform high dispersive of molecular layers thick in matrix surface
Interfacial oxide composite construction；It is another kind of be by various ingredients carry out simultaneously solidification i.e. body it is mutually compound, such methods are asked at all
Topic is and is not concerned with for the recombination process between component to be controlled in the micro-scale scope of solid surface and interface, therefore is also difficult to reality
The fining regulation of existing material surface and interface structure and performance.In view of the above-mentioned problems, the present invention is pair with Cu-Ce composite oxides
As proposing and having practiced one kind in Cu oxide (Cu2O or CuO) surface direct construction cerium oxide layer (Ce(III) and Ce
(IV) it coexists, is denoted as CeOx) composite material new method, Cu specially not oxidized with surface2O material is matrix, is directly drawn
Enter the appropriate compound such as (NH for containing+4 valence oxidation state Ce elements4)2Ce(NO3)6, in water, alcohol or water-alcohol mixed solution, lead to
Cross Cu2The surface O is reacted with the redox of Ce(IV) displacement, i.e. Cu2O surface molecular is oxidized to Cu2+While abjection,
Cu2Ce(IV on O matrix) it is reduced and is deposited as CeOx, thus to obtain Cu2O surface recombination CeOxLayer material, on this basis,
Sample is heat-treated Cu2O matrix converted in-situ is CuO, can further obtain the surface the CuO compound CeO of high dispersivexMaterial
Material.This method feature is: preparation process is substantially one and occurs in Cu2The heterogeneous oxidation reduction displacement of O matrix surface is anti-
It answers, only Cu2O matrix surface molecular layer, which can be used as, is deposited as CeO for Ce(IV) reductionxReaction and cover interface, thus from original
It ensure that CeO in reasonxIt can be with molecular scale thin layer high degree of dispersion, uniformly, be closely compound in a nanometer Cu2O(or subsequent heat treatment are spread out
Raw CuO) material surface；CeOxDispersing morphology and sample overall performance mainly by the Ce element and Cu in preparation system2O
Chemical molar ratio determines, this application involves proportional region be 0.02-2.0, the performance of thus easily achieving sample regulates and controls, such as institute
Prepare sample Ce:Cu2O control is Ce and Cu when 0.05-0.8(corresponds to preparation2The chemical molar ratio of O be 0.1-1.6) range when,
Under the atmosphere containing sulfur dioxide, the highly selective high conversion reduction removing of nitrogen oxides can be realized between 513-613K, that is, is had
Standby good resistant to sulfur denitration performance.To focusing on solid-state Ce compound disperse properties and Cu-Ce oxide composite structure or interface
The research and application field of interaction, this method are expected to provide easy effective new ginseng for the development of related high performance material
It examines.
Summary of the invention
The purpose of the present invention is in view of the shortcomings of the prior art, providing a kind of Cu oxide surface recombination cerium oxide material
Preparation method proposes and has practiced the Cu not oxidized with surface2O particle (pattern, size are unlimited) is matrix, by its surface
Molecule can be with compound such as (NH containing+4 valence oxidation state Ce(IV) element4)2Ce(NO3)6Between to carry out redox displacement anti-
It answers, passes through Ce element and Cu in adjustment and control system2O chemistry molar ratio, cerium oxide layer (Ce(III) and Ce after realizing displacement
(IV) it coexists, is denoted as CeOx) can with molecular scale thin layer high dispersive, uniformly, be closely compound in Cu2O material surface obtains Cu2O
Surface recombination CeOxThe new method of layer material carries out further heat treatment for Cu to sample2O matrix converted in-situ is CuO, i.e.,
It can get the compound CeO of the surface CuO high dispersivexMaterial.This method is for focusing on solid-state Ce compound disperse properties and Cu-Ce
Oxide interface is a kind of important control of material synthesized reference mutually or the research and application field of compound action.
Preparation method of the present invention includes:
(1) composition of synthetic system are as follows:
Freshly prepared Cu2O material (guarantee material surface not oxidized be CuO): pattern is unlimited, cube, octahedron,
Sphere, porous sphere, random body all may be used；Size is unlimited, from nanometer to centimetre all may be used；Dosage is weighed according to needed for.Contain
There are the soluble compound such as (NH of+4 valence oxidation state Ce elements4)2Ce(NO3)6, dispersion be pure deionized water, alcohol (ethyl alcohol,
Isopropanol or 2- butanol) or water and alcohol arbitrary proportion mixed solution, Ce element and Cu in system2The chemical molar ratio of O is
0.02-2.0。
(2) preparation step:
Weigh the not oxidized Cu for CuO in surface2O100-500mg, be scattered under normal temperature and pressure 300 mL deionized waters,
In alcohol or water-alcohol mixed liquor, the alcohol be ethyl alcohol, isopropanol or 2 butanol, based on material structure, performance mainly by Ce element with
Cu2O chemistry molar ratio determines that the present invention controls Ce element and Cu2The chemical molar ratio of O is 0.02-2.0, that is, weighs 100-
2000mg (NH4)2Ce(NO3)6It is added in above-mentioned dispersion and carries out reaction preparation, after stirring 2 hours, standing system 30 is divided
Clock is then centrifugated out sediment, after repeatedly being washed with above-mentioned dispersion solvent, obtains after vacuum 333K is 6 hours dry
Sample.By conditions above control, it can be achieved that cerium oxide (Ce(III) and Ce(IV) coexisting and being denoted as CeOx) thin with molecular scale
Layer high dispersive, uniformly, be closely compound in Cu2On O matrix to get arrive Cu2The surface the O compound CeO of high dispersivexLayer material, to gained
Material is in air atmosphere, and temperature is higher than 623K processing 3 hours or more, by matrix Cu2O is converted into CuO, and CuO table can be obtained
The compound CeO in facexLayer material.
By the prepared surface the CuO compound CeO of high dispersivexLayer material restores elimination reaction for nitrogen oxides, selects
Ce Ce and Cu in 0.05-0.8(corresponding preparation with the chemical molar ratio of CuO2The chemical molar ratio of O is in 0.1-1.6) range
Sample, weigh 180 mg filling quartz tube reactor, be passed through volume group as NO:NH3:O2:SO2:N2=0.1:0.1:5:
The reaction gas of 0.02:94.78, air speed are 10000-50000 h-1, temperature-programmed reaction test is carried out, in the atmosphere containing sulfur dioxide
Under enclosing, the highly selective high conversion reduction removing of nitrogen oxides can be realized between 513-613K, that is, has good resistant to sulfur denitration
Performance.
Beneficial effects of the present invention:
(1) CeOxIt can be with molecular scale thin layer high dispersive, uniformly, be closely compound in a nanometer Cu2O or CuO material surface.
(2) CeOxDispersing morphology and sample overall performance mainly by the Ce element and Cu in preparation system2O chemistry rubs
You than determine, this application involves proportional region be 0.02-2.0, thus easily achieving sample batch preparation and performance regulation.
(3) Ce and Cu in 0.05-0.8(corresponding preparation with the chemical molar ratio of CuO of sample Ce prepared by2The chemistry of O rubs
You than be 0.1-1.6) range when, under the atmosphere containing sulfur dioxide, nitrogen oxides high selection can be realized between 513-613K
Property height conversion reduction removing, that is, have good resistant to sulfur denitration performance.
Detailed description of the invention
Scanning electron microscope (SEM) the matrix Cu of Fig. 1 a typical sample2O spherical nanoparticle photo；
Fig. 1 b is scanning electron microscope (SEM) Cu of typical sample2O surface recombination CeOxParticle photo；
Fig. 1 c is scanning electron microscope (SEM) the CuO surface recombination CeO of typical samplexParticle photo；
Fig. 2 a is the XPS spectrum Cu species spectral peak figure of typical sample；Fig. 2 b is the XPS spectrum Ce species spectral peak figure of typical sample；
In figure: a is matrix Cu2O spherical nanoparticle；B is Cu2O surface recombination CeOxParticle；C is CuO surface recombination
CeOxParticle；
Fig. 3 is the XRD spectra of typical sample；
In figure: a is matrix Cu2O spherical nanoparticle；B is Cu2O surface recombination CeOxParticle；C is CuO surface recombination
CeOxParticle；
Fig. 4 is the resistant to sulfur nitrous oxides selectivity reduction removal performance test curve of typical sample；
In figure: a is matrix Cu2O spherical nanoparticle；B is Cu2O surface recombination CeOxParticle；C is CuO surface recombination
CeOxParticle.
Specific embodiment
Implement example: ball shaped nano Cu2O surface recombination CeOxThe synthetic method of material, analysis and use example
Synthetic method: under normal temperature and pressure, the Cu for being 200 nm by the size of brand-new2O spheric granules weighs appropriate such as 400
Mg is scattered in 300 mL deionized waters, according to Ce element and Cu2The chemical molar ratio modification scope of O is 0.1-1.6, is weighed
1000-1600 mg (NH4)2Ce(NO3)6It is added in above-mentioned dispersion and carries out reaction preparation, after high degree of agitation 2 hours, stand
System 30 minutes, it is then centrifugated out sediment, after repeatedly being washed with deionized water, is obtained after vacuum 333K is 6 hours dry
Cu2The compound CeOx layer material of the surface O high dispersive, to resulting materials in air atmosphere, temperature be higher than 623K handle 3 hours with
On by matrix Cu2O is converted into CuO, and the surface the CuO compound CeO of high dispersive can be obtainedxLayer material.
Analysis: basis material Cu is chosen2O spherical nanoparticle (a), ball shaped nano Cu2O surface recombination CeOxParticle (b) with
And ball shaped nano CuO surface recombination CeOxThree kinds of typical samples of particle (c), by scanning electron microscope (SEM), X-ray electronics energy
Spectrum (XPS) and X-ray diffraction spectrogram (XRD) have carried out pattern, surface condition and structural analysis.Fig. 1 a-1c is three kinds of samples
SEM photograph, it is seen that three kinds of samples are all similar nanometer spherical state, it is meant that sample and basis material Cu containing Ce2O is compared
Whole pattern does not have significant changes.It is shown by XPS result figure 2a and Fig. 2 b, relative to basis material Cu2O (a), the sample containing Ce
(b) and (c) is other than having corresponding Cu oxide species spectral peak, and there are also+3 (III) ,+4 (IV) valence Ce elemental characteristic spectral peaks；And by XRD
Spectrogram Fig. 3 shows that the sample (b) containing Ce only has the diffraction maximum of corresponding Cu oxide matrix with (c), and synthesis result shows these materials
Material is mutually that main body is still maintained Cu oxide, and forms and be evenly distributed on its surface, the higher multivalent state CeO of dispersion degreex
Compound thin layer, i.e. two kinds of samples containing Ce are Cu oxide surface recombination cerium oxide layer materials.
Catalyst uses example: by the prepared surface the CuO compound CeO of high dispersivexLayer material exists for nitrogen oxides
Elimination reaction in atmosphere containing sulfur dioxide, select Ce and the chemical molar ratio of CuO in 0.05-0.8(corresponding preparation Ce and
Cu2The chemical molar ratio of O is the sample in 0.1-1.6) range, weighs 180 mg filling quartz tube reactor, is passed through volume
Group becomes NO:NH3:O2:SO2:N2The reaction gas of=0.1:0.1:5:0.02:94.78, air speed are 10000-50000 h-1, carry out
Temperature-programmed reaction test, as a result as shown in figure 4, under the atmosphere containing sulfur dioxide, can realize nitrogen oxygen between 513-613K
The highly selective high conversion reduction removing of compound, that is, have good resistant to sulfur denitration performance.
Claims (2)
1. a kind of preparation method of Cu oxide surface recombination cerium oxide layer materials, it is characterised in that: weigh material surface not by
It is oxidized to the Cu of CuO2O 100-500mg is scattered in 300mL deionized water, alcohol or water-alcohol mixed liquor under normal temperature and pressure；Base
In material structure, performance mainly by Ce element and Cu2O chemistry molar ratio determines, controls Ce element and Cu2The chemical molar ratio of O is
0.02-2.0 weighs 100-2000mg (NH4)2Ce(NO3)6It is added in above-mentioned dispersion and carries out reaction preparation, stirring 2 is small
Shi Hou stands system 30 minutes；It is then centrifugated out sediment, after repeatedly being washed with above-mentioned dispersion solvent, vacuum
333K is 6 hours dry；Controlled by conditions above can be achieved cerium oxide with molecular scale thin layer high dispersive, uniformly, it is close compound
In Cu2On O matrix to get arrive Cu2O surface recombination CeOxLayer material；To resulting materials in air atmosphere, temperature is higher than
623K processing 3 hours or more, by matrix Cu2O is converted into CuO, can further obtain CuO surface recombination CeOxLayer material.
2. a kind of preparation method of Cu oxide surface recombination cerium oxide layer materials according to claim 1, feature exist
In: the alcohol is ethyl alcohol, isopropanol or 2- butanol.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1907561A (en) * | 2006-07-28 | 2007-02-07 | 华南理工大学 | Method for combination preparation of CuO/CeO2/gamma-Al2O by use of ultrasound-plasma |
| CN104475113A (en) * | 2014-11-04 | 2015-04-01 | 内蒙古大学 | Novel morphology controllable CeO2/Cu2O catalyst for CO preferential oxidation reaction through liquid-phase reduction method |
-
2016
- 2016-11-02 CN CN201610943921.0A patent/CN106563457B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1907561A (en) * | 2006-07-28 | 2007-02-07 | 华南理工大学 | Method for combination preparation of CuO/CeO2/gamma-Al2O by use of ultrasound-plasma |
| CN104475113A (en) * | 2014-11-04 | 2015-04-01 | 内蒙古大学 | Novel morphology controllable CeO2/Cu2O catalyst for CO preferential oxidation reaction through liquid-phase reduction method |
Non-Patent Citations (3)
| Title |
|---|
| CuOx-CeO2复合氧化物的结构调控和催化性能;包蕙质;《中国博士学位论文全文数据库 工程科技I辑》;20120115(第01期);全文 |
| Low-Temperature Conversion of Methane to Methanol on CeOx/Cu2O Catalysts: Water Controlled Activation of the C-H Bond;Zhijun Zuo et al.;《J.Am.Chem.Soc.》;20161010;第138卷;全文 |
| Preparation of Cu2O/CeO2 heterojunction photocatalyst for the degradation of Acid Orange 7 under visible light irradiation;Shichao Hu et al.;《Catalysis Communications》;20110204;第12卷;全文 |
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