CN106558625A - Solar cell and its manufacture method - Google Patents
Solar cell and its manufacture method Download PDFInfo
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- CN106558625A CN106558625A CN201510613059.2A CN201510613059A CN106558625A CN 106558625 A CN106558625 A CN 106558625A CN 201510613059 A CN201510613059 A CN 201510613059A CN 106558625 A CN106558625 A CN 106558625A
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- solar cell
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- reflecting layer
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000002105 nanoparticle Substances 0.000 claims abstract description 37
- 239000011159 matrix material Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 241000209094 Oryza Species 0.000 claims description 5
- 235000007164 Oryza sativa Nutrition 0.000 claims description 5
- 235000009566 rice Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000013339 cereals Nutrition 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of solar cell, which includes solar cell matrix, the solar cell matrix includes anti-reflecting layer, the surface of the anti-reflecting layer is provided with multiple micro-structurals, the plurality of micro-structural is in stripe-arrangement or two-dimensional arrangements, and the surface distributed of the micro-structural has multiple spaced nano particles.The invention further relates to a kind of manufacture method of solar cell.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of solar cell and manufacture method.
Background technology
Increasingly poor with traditional energy, development and utilization of the whole world to novel energy is increasingly becomed throughout the world
Focus of attention, too can as novel energy you have it is inexhaustible, nexhaustible, it is pollution-free, nuisanceless
The characteristics of and enjoy global concern, and realize the industrialization of energy conversion.
Solar cell is a kind of device of the utilization sunshine direct generation of electricity, has been widely used.It is existing
Solar cell is crystal silicon solar energy battery.The work of the existing crystal silicon solar energy battery commercially produced
Skill flow process is followed successively by：Making herbs into wool, cleaning, phosphorus diffuse to form PN junction, and plasma or wet etching remove periphery
PN junction, coated with antireflection film, after screen printing electrode, sintering forms Ohmic contact.The knot of this solar cell
Structure is simple, it is easy to large-scale production, however, the light conversion efficiency of the solar cell prepared is relatively low.
The content of the invention
For the problems referred to above, it is an object of the invention to provide a kind of solar cell, to solve prior art
In solar cell the low problem of light conversion efficiency.
The invention provides a kind of solar cell, which includes solar cell matrix, the solar cell
Matrix includes anti-reflecting layer, and the surface of the anti-reflecting layer is provided with multiple micro-structurals, and the plurality of micro-structural is in
Stripe-arrangement or two-dimensional arrangements, the surface distributed of the micro-structural have multiple spaced nano particles.
Wherein, the height of the micro-structural is 1 nanometer～100 microns, and the size of the micro-structural is received for 0.1
Rice～500 nanometers, the spacing between two adjacent micro-structurals are 1 nanometer～1 micron.
Wherein, the size of the nano particle is 0.1 nanometer～50 nanometers.
Wherein, the material of the nano particle is aluminium, silver, copper or gold.
The present invention also provides a kind of manufacture method of solar cell, and which comprises the following steps：
S1：The figuratum template of a tool and solar cell matrix are provided, the solar cell matrix includes
One anti-reflecting layer；
S2：Mask layer is formed on the surface of the anti-reflecting layer；
S3：The pattern of the template is transferred to by the mask layer by photoetching, patterned mask layer is obtained,
The patterned mask layer covers the subregion on the anti-reflecting layer surface, and exposes the anti-reflecting layer
Remaining region on surface；
S4：Remaining region on the anti-reflecting layer surface is etched, makes the anti-reflecting layer surface form multiple micro-
Structure, the plurality of micro-structural are in stripe-arrangement or two-dimensional arrangements；
S5：Remove the patterned mask layer；And
S6：Multiple spaced nano particles are formed on the surface of the micro-structural.
Wherein, the pattern of the template is transferred to by the mask layer by photoetching in step S3, is obtained
Patterned mask layer is specifically included：
In the mask layer, the template is set；
The mask layer is exposed by the template；And
Development shaping, obtains patterned mask layer.
Wherein, the material of the mask layer is ZEP520, PMMA, HSQ, PS, SAL601 or ARZ720
In one kind.
Wherein, the material of the anti-reflecting layer is the one kind in silica, silicon nitride or titanium oxide.
Wherein, the size of the nano particle is 0.1 nanometer～50 nanometers.
Wherein, the material of the nano particle is chromium, silver, copper or gold.
Compared with prior art, solar cell of the present invention and preparation method have advantages below：Pass through
Formed on anti-reflecting layer it is multiple in stripe-arrangement or two-dimensional arrangements micro-structural, and the surface of the micro-structural
Multiple spaced nano particles are distributed with, the specific structure can carry out multiple simultaneously to incident light
Interfere and diffraction, reduce the reflection of light, make most light enter the inside of solar cell, improve light
Absorptivity, so as to improve the photoelectric transformation efficiency of solar cell；Also, resist relative to existing smooth
For reflection layer surface, the nano particle on the plurality of micro-structural and surface considerably increases described by sunlight photograph
The area penetrated, thus further improve absorptivity.
As the nano particle is aluminium, silver, copper or golden this metalloid, nano particle the exciting in light
Lower light causes electronics coherent oscillation, the i.e. plasmon resonance of excitating surface plasma with the interaction of electromagnetic field,
So as to increased the absorption of light, the absorptivity of solar cell is greatly improved, solar-electricity is finally improved
The photoelectric transformation efficiency in pond.
Description of the drawings
In order to be illustrated more clearly that technical scheme, below by to be used needed for embodiment
Accompanying drawing is briefly described, it is therefore apparent that drawings in the following description are only some embodiment party of the present invention
Formula, for those of ordinary skill in the art, on the premise of not paying creative work, can be with root
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structural representation of solar cell of the present invention.
Fig. 2 is the top view of an embodiment of the solar cell in Fig. 1.
Fig. 3 is the top view of another embodiment of the solar cell in Fig. 1.
Fig. 4 is the flow chart of the preparation method of solar cell of the present invention.
In Fig. 1 to Fig. 3,1 represents solar cell matrix；2 represent anti-reflecting layer；2a represents that second is recessed
Portion；3 represent micro-structural；4 represent nano particle；5 represent template；6 represent mask layer；6a represents first
Recess.
Specific embodiment
Below in conjunction with the accompanying drawing in embodiment of the present invention, the technical scheme in embodiment of the present invention is entered
Row is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the invention,
Rather than the embodiment of whole.Based on the embodiment in the present invention, those of ordinary skill in the art are not having
There is the every other embodiment obtained under the premise of making creative work, belong to the model of present invention protection
Enclose.
Fig. 1 and Fig. 2 is referred to, the embodiment of the present invention provides a kind of solar cell, including solar cell base
Body 1.The solar cell matrix 1 is provided with anti-reflecting layer 2.The surface of the anti-reflecting layer 2 is provided with multiple micro-
Structure 3.In the present embodiment, the plurality of micro-structural 3 is in one-dimensional stripe-arrangement, in other embodiments,
Two-dimensional arrangements (as shown in Figure 3) of the plurality of micro-structural 3 in multiple lines and multiple rows.The surface of the micro-structural 3
Multiple spaced nano particles 4 are distributed with.
The solar cell matrix 1 is solar cell matrix used in prior art, generally comprises P-N
Junction structure and two electrodes.
End face of the anti-reflecting layer 2 located at the light of the solar cell matrix 1.The anti-reflecting layer 2
Material can be silica, silicon nitride or titanium oxide in one kind.The thickness of the anti-reflecting layer 2 is received for 1
Rice～100 microns；Preferably, it is 10 nanometers～1 micron；It is furthermore preferred that being 50 nanometers～500 nanometers.This
In embodiment, the material of the anti-reflecting layer 2 is silica, and thickness is 200 nanometers.
As shown in Fig. 2 the micro-structural 3 can be the groove being inwardly recessed from the surface of anti-reflecting layer 2,
It can be raised line from the surface of anti-reflecting layer 2 outwardly.Multiple raised lines or the spaced arrangement of groove.Institute
It is to be formed by etching the part surface of the anti-reflecting layer 2 to state micro-structural 3.That is, micro- knot
The material of structure 3 is consistent with the material of the anti-reflecting layer 2, and the micro-structural 3 with the anti-reflecting layer 2 is
The structure of one.The width of the micro-structural 3 is defined as the size of the micro-structural 3.The micro-structural 3
Size be 0.1 nanometer～500 nanometers, it is preferred that 50 nanometers～200 nanometers.The height of the micro-structural 3
For 1 nanometer～100 microns.Spacing between two adjacent micro-structurals 3 is 1 nanometer～1 micron.It is the plurality of
The spaced distance of micro-structural 3 can be with equal, it is also possible to unequal.In the present embodiment, micro- knot
Structure 3 is strip projected parts, and the size of micro-structural 3 is 100 nanometers, is highly 50 nanometers, and adjacent two are micro-
Spacing between structure 3 is 50 nanometers.
As shown in figure 3, in other embodiments, the micro-structural 3 can be from the surface of anti-reflecting layer 2 to
Interior recessed sunk structure, the alternatively bulge-structure from the surface of anti-reflecting layer 2 outwardly.It is described micro-
Structure 3 is to be formed by etching the part surface of the anti-reflecting layer 2.That is, the micro-structural 3
Material it is consistent with the material of the anti-reflecting layer 2, the micro-structural 3 is integrated with the anti-reflecting layer 2
Structure.The maximum length of the cross section of the micro-structural 3 is defined as the size of the micro-structural 3.It is described
The size of micro-structural 3 is 0.1 nanometer～500 nanometers, it is preferred that 5 nanometers～200 nanometers.The micro-structural 3
The shape of cross section do not limit, can be square, rhombus, circle, hexagon etc..The micro-structural 3
Highly it is 1 nanometer～100 microns.Spacing between two adjacent micro-structurals 3 is 1 nanometer～1 micron.Should
The arrangement mode of multiple micro-structurals 3 can be arranged as required to, concretely the arrangement side of regular multiple lines and multiple rows
Formula, determinant arrangement alternatively staggeredly, also or the arrangement such as concentric-ring pattern, regular hexagon formula.In figure 3,
The micro-structural 3 is grid-like projection, and the size of micro-structural 3 is 100 nanometers, is highly 50 nanometers, phase
Spacing between two adjacent micro-structurals 3 is 50 nanometers.
The nano particle 4 is attached to the surface of the micro-structural 3.So that micro-structural 3 is as raised line as an example, institute
Stating raised line includes a top surface and side, and multiple nano particles 4 are attached to the top surface of the raised line and side.
So that micro-structural 3 is as groove as an example, the groove includes a bottom surface and side, and multiple nano particles 4 adhere to
In the bottom surface and side of the groove.The material of the nano particle is the gold with surface plasmons
Category material, specially aluminium, silver, copper or gold.The nano particle 4 can by magnetron sputtering, vacuum evaporation,
Ald etc. is deposited on the surface of the micro-structural 3.Now, the nano particle 4 and micro- knot
Atom in structure 3 can form Van der Waals force and combine closely.The size of the nano particle is 0.1 nanometer～50
Nanometer；Preferably, 3 nanometers～30 nanometers；It is furthermore preferred that being 3 nanometers～8 nanometers.In the present embodiment, receive
The material of rice grain 4 is silver, and size is 5 nanometers.
Fig. 4 is referred to, the present invention also provides a kind of manufacture method of solar cell, comprises the following steps：
S1：The figuratum template 5 of one tool and solar cell matrix 1, the solar cell matrix 1 are provided
Including an anti-reflecting layer 2；
S2：Mask layer 6 is formed on the surface of the anti-reflecting layer 2；
S3：The pattern of the template 5 is transferred to by the mask layer 6 by photoetching, patterned mask is obtained
Layer 6, the patterned mask layer 6 cover the subregion on 2 surface of the anti-reflecting layer, and expose described
Remaining region on 2 surface of anti-reflecting layer；
S4：Remaining region on 2 surface of the anti-reflecting layer is etched, makes 2 surface of the anti-reflecting layer form many
Individual micro-structural 3, the plurality of micro-structural 3 are in one-dimensional stripe-arrangement or the two-dimensional arrangements in multiple lines and multiple rows；
S5：Remove the patterned mask layer 6；And
S6：Multiple spaced nano particles 4 are formed on the surface of the micro-structural 3.
The solar cell matrix 1, anti-reflecting layer 2, micro-structural 3 and nano particle 4 and the above-mentioned sun
Each part in energy battery is identical, repeats no more.
In step sl, the template 5 has the good pattern of predetermined design.The material of the template 5 can be
Nickel, silicon, silica etc..It is when the plurality of micro-structural 3 is in one-dimensional stripe-arrangement, described with pattern
Template 5 include multiple spaced strip gabs and the gap from strip-type between multiple openings, institute
The pattern for stating template 5 is consistent or complementary with the pattern of the patterned mask layer 6；When the plurality of micro- knot
During two-dimensional arrangements of the structure 3 in multiple lines and multiple rows, the figuratum template of the tool 5 includes multiple spaced sides
Trellis opening and the gap from strip-type between multiple openings, the pattern of the template 5 are graphical with described
Mask layer 6 pattern it is consistent or complementary.
In step s 2, the mask layer 6 can be formed at the anti-reflecting layer 2 by coating methods such as spin coatings
Surface.The material of the mask layer is ZEP520, PMMA, HSQ, PS, SAL601 or ARZ720
In one kind.Specifically, the material of mask layer 6 can be eurymeric mask layer, the exposed rear mask layer 6
Pattern it is identical with the pattern of the template 5, thus, subsequently after the etching of step S4, obtain
Micro-structural 3 be sunk structure.The material of the mask layer 6 be alternatively negative mask layer when, it is exposed after
The pattern complementary of the pattern of the mask layer 6 and the template 5, thus, subsequently through the quarter of step S4
After erosion, the micro-structural 3 for obtaining is bulge-structure.In the present embodiment, the material of the mask layer 6 is negative
Type mask layer HSQ.
In step s3, the mode of the photoetching can be the mode such as electron beam exposure or photoetching process.This enforcement
In example, the pattern of the template is made to be transferred to the mask layer using electron beam exposure method.Specifically, including
Following steps：
S31：In the mask layer 6, the template 5 is set；
S32：It is exposed by 5 pairs of mask layers 6 of the template；And
S33：Development shaping, obtains patterned mask layer 6.
Wherein, when the plurality of micro-structural 3 be in one-dimensional stripe-arrangement when, the patterned mask layer 6 by
The first recess 6a compositions between multiple striped-shaped masks raised (figure is not marked) and two adjacent mask projections,
The anti-reflecting layer 2 comes out corresponding to the part of the first recess 6a；When the plurality of micro-structural 3 is in
During the two-dimensional arrangements of multiple lines and multiple rows, the patterned mask layer 6 (is schemed not by multiple grid-like masks are raised
Mark) and the first recess 6a compositions between two adjacent mask projections, the anti-reflecting layer 2 is corresponding to institute
Come out the part for stating the first recess 6a.
In step s 4, the lithographic method can the realization of using plasma method.Specifically, etching process exists
Realize in one inductively coupled plasma system.Using plasma atmosphere according to the anti-reflecting layer 2
Depending on material.The part surface that the anti-reflecting layer 2 is exposed is etched by being contacted with plasma atmosphere,
Continue to extend downwardly equivalent to the first recess 6a and the second recess 2a is formed in anti-reflecting layer 2, it is corresponding
The anti-reflecting layer 2 will not be etched by the part surface that the patterned mask layer 6 is covered, most end form
Into multiple micro-structurals 3.
In step s 5, available machine solvent such as tetrahydrofuran, acetone, methyl alcohol etc. of common are is used as stripping
Agent, dissolves the mask layer 6 and removes remaining mask layer 6.
In step s 6, the nano particle 4 can be by magnetron sputtering, vacuum evaporation, ald etc.
It is deposited on the surface of the micro-structural 3.It should be noted that the time of deposition is shorter, according to method not
Can be 3 seconds～20 seconds together, to ensure the size of the nano particle 4 as 0.1 nanometer～50 nanometers, and
It is spaced between multiple nano particles 4, and do not form continuous layer structure.The nano particle 4
3 nanometers～30 nanometers are preferably dimensioned to be, so as to nano particle 4 can further on the basis of the micro-structural 3
On further improve the impingement rate of its surface area and light.The nano particle 4 only can be distributed in described micro-
The surface of structure 3, also can be distributed in the whole surface of the micro-structural 3 and anti-reflecting layer 2.It is available
The anti-reflecting layer 2 is covered while exposing micro-structural 3, then deposited and realized nanometer by one mask
Grain 4 is only distributed in the surface of the micro-structural 3.In the present embodiment, metal is formed by atomic layer deposition method
Silver nano particle 4, sedimentation time be 10 seconds, the nano particle 4 be distributed in the micro-structural 3 and
The whole surface of anti-reflecting layer 2.
Solar cell of the present invention and preparation method have advantages below：By the shape on anti-reflecting layer 2
Into multiple micro-structurals 3, multiple micro-structurals are in the surface distributed of stripe-arrangement or two-dimensional arrangements and the micro-structural 3
There are multiple spaced nano particles 4, the specific structure can carry out multiple interference to incident light simultaneously
And diffraction, the reflection of light is reduced, is made most light enter the inside of solar cell, is improved light absorbs
Rate, finally improves the photoelectric transformation efficiency of solar cell；Also, relative to existing smooth antireflection
For layer surface, the nano particle on the plurality of micro-structural and surface considerably increases described sunkissed
Area, thus further improve absorptivity.
As the nano particle 4 is aluminium, silver, copper or golden this metalloid, the nano particle 4 is in light
Lower light and the interaction of electromagnetic field is excited to cause electronics coherent oscillation, the i.e. excimer of excitating surface plasma
Resonance, so as to increased the absorption of light, greatly improving the absorptivity of solar cell, finally improving too
The photoelectric transformation efficiency of positive energy battery.
The above is the preferred embodiment of the present invention, it is noted that for the common skill of the art
For art personnel, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, this
A little improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of solar cell, it is characterised in that including solar cell matrix, the solar cell
Matrix includes anti-reflecting layer, and the surface of the anti-reflecting layer is provided with multiple micro-structurals, and the plurality of micro-structural is in
Stripe-arrangement or two-dimensional arrangements, the surface distributed of the micro-structural have multiple spaced nano particles.
2. solar cell according to claim 1, it is characterised in that the height of the micro-structural is
1 nanometer～100 microns, the size of the micro-structural is 0.1 nanometer～500 nanometers, two adjacent micro-structurals
Between spacing be 1 nanometer～1 micron.
3. the solar cell of solar cell according to claim 3, it is characterised in that described to receive
The size of rice grain is 0.1 nanometer～50 nanometers.
4. solar cell according to claim 1, it is characterised in that the material of the nano particle
Expect for aluminium, silver, copper or gold.
5. a kind of manufacture method of solar cell, it is characterised in that comprise the following steps：
S1：The figuratum template of a tool and solar cell matrix are provided, the solar cell matrix includes
One anti-reflecting layer；
S2：Mask layer is formed on the surface of the anti-reflecting layer；
S3：The pattern of the template is transferred to by the mask layer by photoetching, patterned mask layer is obtained,
The patterned mask layer covers the subregion on the anti-reflecting layer surface, and exposes the anti-reflecting layer
Remaining region on surface；
S4：Remaining region on the anti-reflecting layer surface is etched, makes the anti-reflecting layer surface form multiple micro-
Structure, the plurality of micro-structural are in stripe-arrangement or two-dimensional arrangements；
S5：Remove the patterned mask layer；And
S6：Multiple spaced nano particles are formed on the surface of the micro-structural.
6. the manufacture method of solar cell according to claim 5, it is characterised in that the step
The pattern of the template is transferred to by the mask layer by photoetching in rapid S3, patterned mask layer tool is obtained
Body includes：
In the mask layer, the template is set；
The mask layer is exposed by the template；And
Development shaping, obtains patterned mask layer.
7. the manufacture method of solar cell according to claim 5, it is characterised in that described to cover
The material of film layer is the one kind in ZEP520, PMMA, HSQ, PS, SAL601 or ARZ720.
8. the manufacture method of solar cell according to claim 5, it is characterised in that the anti-reflective
The material for penetrating layer is the one kind in silica, silicon nitride or titanium oxide.
9. the manufacture method of solar cell according to claim 5, it is characterised in that the nanometer
The size of particle is 0.1 nanometer～50 nanometers.
10. the manufacture method of solar cell according to claim 5, it is characterised in that described to receive
The material of rice grain is aluminium, silver, copper or gold.
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| CN201510613059.2A CN106558625A (en) | 2015-09-23 | 2015-09-23 | Solar cell and its manufacture method |
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