CN106558321A - Negative polarization spin torque oscillator - Google Patents

Negative polarization spin torque oscillator Download PDF

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Publication number
CN106558321A
CN106558321A CN201510746548.5A CN201510746548A CN106558321A CN 106558321 A CN106558321 A CN 106558321A CN 201510746548 A CN201510746548 A CN 201510746548A CN 106558321 A CN106558321 A CN 106558321A
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CN
China
Prior art keywords
magnetosphere
layer
intermediate layer
spin
spin torque
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Pending
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CN201510746548.5A
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Chinese (zh)
Inventor
长坂惠
长坂惠一
佐藤阳
椎本正人
佐藤雅重
五十岚万寿和
冈村进
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HGST Netherlands BV
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Hitachi Global Storage Technologies Netherlands BV
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Priority to CN201510746548.5A priority Critical patent/CN106558321A/en
Publication of CN106558321A publication Critical patent/CN106558321A/en
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Abstract

The present invention relates to a kind of negative polarization spin torque oscillator.Disclosed embodiment relates generally to MAMR heads.The MAMR heads include STO.The STO includes the first magnetosphere, the second magnetosphere and the intermediate layer being arranged between the first magnetosphere and the second magnetosphere.One of first and second magnetosphere is made up of negative polarization material, and other magnetospheres are made up of positive polarization material.Therefore, the magnetization when vibration in the first and second magnetospheres is in equidirectional, and this can suppress in the first and second magnetospheres magnetized partial offset and increase intense AC magnetic field.

Description

Negative polarization spin torque oscillator
Background
Technical field
Embodiment disclosed herein relates generally to a kind of disk of use microwave-assisted magnetic recording head and sets It is standby.
Background technology
In past many years, microwave-assisted magnetic recording (MAMR) is studied as carrying always The recording method of the surface density of high magnetic read/write equipment, such as hard disk drive (HDD).MAMR Magnetic recording head can be made using spin torque oscillator (STO) to produce microwave (high-frequency AC magnetic ).When applying from the magnetic field of writing head and electric current is transmitted to STO, the STO vibrates simultaneously And AC magnetic fields are provided for recording medium.The AC magnetic fields can reduce the coercivity of recording medium, Therefore MAMR can realize that high-quality is recorded.Generally, the STO includes spin polarization layer (SPL), field produces layer (FGL) and the intermediate layer being arranged between SPL and FGL.Due to Spin-torque from SPL is delivered to FGL by intermediate layer, and the STO produces high frequency magnetic field, Or rotation is used as free layer in face at a high speed in microwave, and the magnetized face of the FGL.
In some designs, the direction of magnetization of the direction of magnetization in SPL in FGL, Referred to as T-shaped oscillation mode.The T-shaped vibration make use of reflection torque, and this is inefficient. In other designs, the direction of magnetization in SPL is the direction of magnetization being antiparallel in FGL, also referred to as For AF type oscillation modes.Antiparallel means that SPL is parallel with the direction of magnetization in FGL But it is in rightabout.The vibration of AF types make use of reflection torque and Direct Torque, therefore can be with Obtain the vibration with little bias current.However, antiparallel magnetization direction can be with partial offset SPL With the magnetization in FGL, cause to weaken AC magnetic fields.Therefore, technically existing improves MAMR Record head demand.
The content of the invention
Embodiment disclosed herein relates generally to MAMR heads.The MAMR heads include STO. During the STO includes the first magnetosphere, the second magnetosphere and is arranged between first and second magnetosphere Interbed.One of first and second magnetosphere is made up of negative polarization material, and other magnetospheres are by positive pole Change material to make.Therefore, the magnetization in the first and second magnetospheres is in equidirectional, and this can press down Make in the first and second magnetospheres magnetized partial offset and increase intense AC magnetic field.
In one embodiment, disclose a kind of STO.The STO includes the first magnetosphere, and First magnetosphere includes negative polarization material.The STO also includes the second magnetosphere, and second magnetic Layer includes positive polarization material.The STO also includes being arranged between the first magnetosphere and the second magnetosphere First intermediate layer.
In other embodiments, a kind of MAMR systems are disclosed.The MAMR systems include STO, and the STO includes the first magnetosphere, the second magnetosphere and is arranged in the first magnetosphere and second The first intermediate layer between magnetosphere.One of first and second magnetosphere include negative polarization material and One of first and second magnetosphere includes positive polarization material.
In another embodiment, disclose a kind of hard disk drive.The hard disk drive includes Magnetizing mediums, magnetic reading head and magnetic write head.The magnetic write head includes STO, and the STO includes first Magnetosphere.First magnetosphere includes negative polarization material.The STO also includes the second magnetosphere, and should Second magnetosphere includes positive polarization material.The STO also includes being arranged in the first magnetosphere and the second magnetosphere Between the first intermediate layer.
Description of the drawings
In order that the above-mentioned feature enumerated can be proposed by detailed understanding in conjunction with the embodiments The more specific description of the disclosure being briefly summarized is stated, some of which is described in the drawings. It should however be noted that, accompanying drawing only describes the exemplary embodiments of the disclosure, therefore not It is interpreted as restriction on its scope, the disclosure can be allowed in any neck comprising Magnetic Sensor Other equivalent embodiments in domain.
Fig. 1 show according to embodiment described herein disk drive system.
Fig. 2 be the disk of the disk drive system of the Fig. 1 according to the embodiments shown herein and The sectional view of MAMR read/write heads.
Fig. 3 A-3B be according to embodiment described herein the medium of opposed face of STO regard Figure.
In order to make it easy to understand, identical reference is adopted in the case of possible, to indicate in figure Shared identical element.This takes into account in case of no particular description in one embodiment Disclosed in key element can be advantageously utilised in the situation in other embodiments.
Specific embodiment
Hereinafter, reference implementation example.It should be understood, however, that the disclosure is not limited to specifically retouch The embodiment stated.Alternatively, below feature and any combinations of key element, regardless of whether being related to Different embodiments, can adopt and implement the disclosure.And, although the embodiment of the disclosure The advantage of other solutions and/or prior art can be achieved over, but is whether by given reality It is not the restriction to the disclosure to apply example and realize concrete advantage.Therefore, aspect below, feature, Embodiment and advantage be only it is descriptive, and be not considered claims key element or Limit, except clearly referring in non-claimed.
Embodiment disclosed herein relates generally to MAMR heads.The MAMR heads include STO. The STO includes the first magnetosphere, the second magnetosphere and is arranged between the first magnetosphere and the second magnetosphere Intermediate layer.One of first and second magnetosphere is made up of negative polarization material, and other magnetospheres are by just Polarization material is made.Therefore, the magnetization in the first and second magnetospheres is in equidirectional, this meeting Suppress in the first and second magnetospheres magnetized partial offset and increase intense AC magnetic field.
Fig. 1 describe according to embodiment described herein disc driver 100.As illustrated, At least one rotatable magnetizing mediums, such as disk 112, are supported on main shaft 114 and by magnetic Disk drive motor 118 rotates.Magnetic recording on each disk is the concentric data rail on disk 112 The circular pattern form of road (not shown).
At least one slide block 113 is arranged near disk 112, and each slide block 113 supports one Or multiple head stacies 121, the head stack includes for AC magnetic fields are applied to panel surface 122 STO.As the disc rotates, the slide block 113 is in the inward-outward direction on panel surface 122 Move radially, so that head stack 121 can access the disk 112 for wherein expecting write data Different tracks.Each slide block 113 is attached to actuator arm 119 by suspension 115.The suspension 115 provide micro-elasticity power, and which makes slide block 113 be partial to panel surface 122.Each actuator arm 119 It is attached to actuator devices 127.The actuator devices 127 for showing in FIG can be voice coil loudspeaker voice coil Motor (VCM).The VCM is included in fixed magnetic field moveable coil, and the coil is moved Dynamic direction and speed are controlled by the motor current signal provided by control unit 129.
Enabling the MAMR run durations of disc driver 100, disk 112 is rotated in cunning Block 113 and applying on slide block 113 produces empty between power upwards or the panel surface 122 of lift Gas bearing.So as to the air bearing contend with suspension 115 micro-elasticity power and support that slide block 113 is closed Close and 112 surface of disk is slightly higher than by little, constant gap during conventional operation.By The AC magnetic fields that head stack 121 is produced reduce the coercivity of high-coercive force medium so that magnetic head Data bit in the correct magnetized medium of write parts of component 121.
The control signal produced by control unit 129 is controlling disc driver in operation 100 all parts, such as access control signal and internal clock signal.Typically, the control Unit 129 includes logic control circuit, storage device and microprocessor.The control unit 129 Control signal is produced to control each system operation, such as the drive motor control letter on line 123 Number and a position and the searching control signal on line 128.Control signal on line 128 is carried Configure so that slide block 113 carries out optimum to the desired data-track of disk 112 for desired electric current The movement of change and positioning.Read-write is by recording channel 125 and the read/write head on device 121 Communication.
The foregoing description of the accompanying drawing of typical disk storage system and Fig. 1 mesh simply for explanation 's.It is evident that disk storage system can include the disk and actuator of big quantity, and often Individual actuator can support multiple slide blocks.
Fig. 2 is that the part at the center by the MAMR read/write heads 200 in the face of disk 202 is cut Surface side view.In FIG, the read/write head 200 and disk 202 respectively with head stack 121 With 112 correspondence of disk.Read/write head 200 includes the medium of opposed face (MFS) 212, example Such as ABS, magnetic write head 210 and magnetic reading head 211, and it is mounted for causing MFS212 in the face of disk 202.In fig. 2, disk 202 is moved through writing head 210 on 232 direction indication of arrow, and And read/write head 200 is moved on 234 direction indication of arrow.
In certain embodiments, magnetic reading head 211 is magnetic resistance (MR) read head, and which includes being located at MR sensing elements 204 between MR shielding S1 and S2.In other embodiments, magnetic reading head 211 is magnetic tunnel-junction (MTJ) read head, and which is included between MR shielding S1 and S2 MTJ sensor devices 204.MR (or MTJ) sensing element 204 can detect disk 202 In adjacent magnetized area magnetic field as record position.
Writing head 210 includes returning magnetic pole 206, main pole 220, trailing shield 240, is arranged in STO230 between main pole 220 and trailing shield 240 and excite the line of main pole 220 Circle 218.Recording magnetic field is produced by main pole 220 and trailing shield 240 is helped so that main pole 220 magnetic field gradient is steep.Main pole 220 can be magnetic material, such as CoFe alloy. In one embodiment, saturation magnetization (Ms) and about 300 of the main pole 220 with 2.4T The thickness of nanometer (nm).Trailing shield 240 can be magnetic material, such as NiFe alloy. In one embodiment, Ms of the trailing shield 240 with about 1.2T.
Main pole 220, trailing shield 240 and STO230 extend to MFS212, and cloth The STO230 put between main pole 220 and trailing shield 240 is electrically coupled to main pole 220 With trailing shield 240.The STO230 is can be by insulating in course bearing (paper inside and outside) Material (not shown) is surrounded.In run duration, STO230 produces AC magnetic fields, and which advances to Disk 202 is reducing the coercivity in the region of the neighbouring STO230 of disk 202.Writing head 210 Also include for adjusting the heater 250 of distance between read/write head 200 and disk 202.Heating The position of device 250 is not limited to above-mentioned return magnetic pole 206, as shown in Figure 2.Heater 250 can cloth Put at any suitable position.
Fig. 3 A-3B be according to embodiment described herein STO300 MFS views.Should STO300 can be the STO230 shown in Fig. 2.As shown in Figure 3A, the STO300 can be arranged Between main pole 220 and trailing shield 240.The STO300 may include the first magnetosphere 304, Second magnetosphere 308 and the intermediate layer being arranged between first magnetosphere 304 and the second magnetosphere 308 306.Intermediate layer 306 can be the nonmagnetic metal with long spin diffusion length.First magnetic Layer 304 can be SPL and second magnetosphere 308 can be FGL, and or vice versa. Generally, SPL and FGL include positive polarization material.Positive polarization material has identical polar and spin Direction.Wherein the SPL and FGL there is the magnetization of positive polarization material, SPL and FGL to be in and shake In swinging, while making which that there is under some felicity conditions antiparallel configuration by the electric current of the material. This is referred to as the vibration of AF types.This antiparallel magnetization oscillating part counteracts SPL's and FGL Magnetization, causes the weaker AC magnetic fields produced by STO.In order to suppress SPL and FGL magnetization Counteracting and strengthen the AC magnetic fields produced by STO, negative polarization material can be used for SPL and FGL One of, while other layers include positive polarization material.Negative polarization material has magnetic reversal and spin. One of SPL and FGL are positive polarization materials and other are negative polarization materials, the SPL in vibration It is parallel with the direction of magnetization of FGL, it is meant that when in vibration, electric current passes through the material, SPL It is identical with the direction of magnetization of FGL.The parallel magnetization direction of SPL and FGL suppresses SPL and FGL In magnetized counteracting, this cause by STO300 produce AC it is magnetic field-enhanced.
In one embodiment, the first magnetosphere 304 is the SPL for including negative polarization material, and Second magnetosphere 308 is the FGL for including positive polarization material.In another embodiment, this first Magnetosphere 304 is the SPL for including positive polarization material, and second magnetosphere 308 is to include negative pole Change the FGL of material.In another embodiment, first magnetosphere 304 is to include positive polarization material The FGL of material, and second magnetosphere 308 is the SPL for including negative polarization material.At another In embodiment, the first magnetosphere 304 is the FGL for including negative polarization material, and the second magnetosphere 308 It is the SPL for including positive polarization material.The example of negative polarization material is included with 5 to 35 atoms hundred Divide the FeCr of the Cr of ratio;The CoCr of the Cr with 5 to 25 atomic percents;With 5 to The NiCr of the Cr of 10 atomic percents;The FeV of the V with 10 to 20 atomic percents; The CoMn of the Mn with 5 to 10 atomic percents;And any magnetic comprising these materials Property material.The example of positive polarization material includes Fe, Co, Ni and its alloy.With with negative polarization At least one of example in the neighbouring intermediate layer of magnetosphere include Cr and its alloy.
STO300 can include the bottom being arranged between main pole 220 and the first magnetosphere 304 302, and the cap rock 310 being arranged between trailing shield 240 and the second magnetosphere 308, such as scheme Shown in 3A.Bottom 302 and cap rock 310 can be conductive metallic materials.In one embodiment, Bottom 302 includes Ta and cap rock 310 includes Cr.In one embodiment, 310 cloth of cap rock Put on the second magnetosphere 308, the second magnetosphere 308 is arranged on intermediate layer 306, in this Interbed 306 is arranged on the first magnetosphere 304, and first magnetosphere 304 is arranged in the bottom On layer 302.
Fig. 3 B are the MFS views of the STO330 according to another embodiment.The STO330 Can be the STO230 shown in Fig. 2.The STO330 can include the first magnetosphere 314, second Magnetosphere 318, the 3rd magnetosphere 322, the first intermediate layer 316 and the second intermediate layer 320.This first Intermediate layer 316 is may be arranged between the first magnetosphere 314 and the second magnetosphere 318, and in second Interbed 320 is may be arranged between the second magnetosphere 318 and the 3rd magnetosphere 322.The intermediate layer 316, 320 is the nonmagnetic metal with long spin diffusion length.First magnetosphere 314 can be SPL, Second magnetosphere 318 can be FGL and the 3rd magnetosphere 322 can be another SPL. In this structure, can be using the vibration of AF types and other oscillation modes, wherein SPL magnetization Keep, referred to as T-shaped vibration vertical with membrane plane.
In one embodiment, the first magnetosphere 314 may include negative polarization material, the second magnetosphere 318 May include positive polarization material and the 3rd magnetosphere 322 may include positive polarization material.In this structure In, the first magnetosphere 314 and the second magnetosphere 318 are vibrated using AF types and 318 He of the second magnetosphere 3rd magnetosphere 322 adopts T-shaped vibration.In another embodiment, the first magnetosphere 314 can be wrapped Positive polarization material is included, the second magnetosphere 318 may include positive polarization material and the 3rd magnetosphere 322 can Including negative polarization material.In this structure, the first magnetosphere 314 and the second magnetosphere 318 adopt T Type vibrates and the second magnetosphere 318 and the 3rd magnetosphere 322 are vibrated using AF types.The two structures Using two SPL layers, because the first magnetosphere 314 and the 3rd magnetosphere 322 can be SPL.Should Double SPL structures improve spin-torque efficiency, and this causes to improve oscillatory regime.In order to further Strengthen at least one of the AC magnetic fields produced by STO330, three magnetospheres 314,318,322 Be able to can wrap including at least one of negative polarization material and three magnetospheres 314,318,322 Include positive polarization material.In one embodiment, first and the 3rd magnetosphere 314,322 at least it One includes negative polarization material and the second magnetosphere 318 includes positive polarization material.In other words, extremely A few SPL includes negative polarization material and FGL includes positive polarization material, and has negative pole The SPL and the FGL with positive polarization material for changing material is vibrated using AF types.Therefore, have There is the SPL of negative polarization material identical with the direction of magnetization of the FGL with positive polarization material, i.e. SPL is parallel with the direction of magnetization of FGL.Parallel magnetization direction contributes to suppressing SPL and FGL In magnetized counteracting, this causes STO330 to produce higher AC magnetic fields.
STO330 may include the bottom 312 being arranged between main pole 220 and the first magnetosphere 314 And the cap rock 324 being arranged between trailing shield 240 and the 3rd magnetosphere 322, such as Fig. 3 B institutes Show.The bottom 312 and cap rock 324 can be with the bottoms 302 and cap rock 310 described in Fig. 3 A It is identical.In one embodiment, cap rock 324 is may be arranged on the 3rd magnetosphere 322, and this Three magnetospheres 322 are may be arranged on the second intermediate layer 320, and the second intermediate layer 320 may be arranged at On second magnetosphere 318, second magnetosphere 318 is may be arranged on the first intermediate layer 316, First intermediate layer 316 is may be arranged on the first magnetosphere 314, and first magnetosphere 314 May be arranged on bottom 312.
In sum, disclose a kind of MAMR for enabling magnetic head.The MAMR heads include cloth Put the STO between main pole and trailing shield.The STO includes at least one SPL and one FGL, and at least one of the layer including negative polarization material, and including the layer of positive polarization material At least one.Permission SPL is parallel with the direction of magnetization of FGL for the structure, and this can suppress SPL With the magnetized counteractings of FGL.Therewith, the AC magnetic fields of STO generations are enhanced.
Although foregoing teachings are for exemplary embodiment, in the feelings without departing from elemental range The other and further embodiment of the disclosure can be designed under condition, and by following right Require to limit its scope.

Claims (21)

1. a kind of spin torque oscillator, including:
First magnetosphere, wherein, first magnetosphere includes negative polarization material;
Second magnetosphere, wherein, second magnetosphere includes positive polarization material;And
First intermediate layer, first intermediate layer are arranged in first magnetosphere and second magnetic Between layer.
2. spin torque oscillator as claimed in claim 1, also including bottom and cap rock.
3. spin torque oscillator as claimed in claim 2, wherein, first magnetosphere is Spin polarization layer and second magnetosphere are that field produces layer, and wherein, the cap rock arrangement On second magnetosphere, second magnetosphere is arranged on first intermediate layer, institute State the first intermediate layer to be arranged on first magnetosphere, and first magnetosphere is arranged in institute State on bottom.
4. spin torque oscillator as claimed in claim 2, wherein, first magnetosphere is Field produces layer and second magnetosphere is spin polarization layer, and wherein, the cap rock arrangement On first magnetosphere, first magnetosphere is arranged on first intermediate layer, institute State the first intermediate layer to be arranged on second magnetosphere, and second magnetosphere is arranged in institute State on bottom.
5. spin torque oscillator as claimed in claim 1, wherein, the negative polarization material Including the material of the group selected from following compositions:The FeCr of the Cr with 5 to 35 atomic percents; The CoCr of the Cr with 5 to 25 atomic percents;Cr with 5 to 10 atomic percents NiCr;The FeV of the V with 10 to 20 atomic percents;With 5 to 10 atomic percents The CoMn of the Mn of ratio;And appointing comprising FeCr, CoCr, NiCr, FeV or CoMn What magnetic material.
6. spin torque oscillator as claimed in claim 1, wherein, the positive polarization material Including the material of the group constituted selected from Fe, Co, Ni and its alloy.
7. spin torque oscillator as claimed in claim 1, wherein, neighbouring first magnetic At least a portion in first intermediate layer of layer includes the group constituted selected from Cr and its alloy Material.
8. spin torque oscillator as claimed in claim 1, also including the second intermediate layer and Three magnetospheres.
9. spin torque oscillator as claimed in claim 8, wherein, the 3rd magnetosphere bag Include positive polarization material.
10. spin torque oscillator as claimed in claim 9, wherein, first magnetosphere It is spin polarization layer, second magnetosphere is that field produces layer, and the 3rd magnetosphere is spin Polarization layer, and wherein, the cap rock is arranged on the 3rd magnetosphere, the 3rd magnetic Layer is arranged on second intermediate layer, and second intermediate layer is arranged in second magnetosphere On, second magnetosphere is arranged on first intermediate layer, first intermediate layer cloth Put on first magnetosphere, and first magnetosphere is arranged on the bottom.
11. spin torque oscillators as claimed in claim 9, wherein, first magnetosphere It is spin polarization layer, second magnetosphere is that field produces layer, and the 3rd magnetosphere is spin Polarization layer, and wherein, the cap rock is arranged on first magnetosphere, first magnetic Layer is arranged on first intermediate layer, and first intermediate layer is arranged in second magnetosphere On, second magnetosphere is arranged on second intermediate layer, second intermediate layer cloth Put on the 3rd magnetosphere, and the 3rd magnetosphere is arranged on the bottom.
A kind of 12. microwave-assisted magnetic recording systems, including:
Spin torque oscillator, wherein, the spin torque oscillator includes:
First magnetosphere;
Second magnetosphere;And
First intermediate layer, first intermediate layer are arranged in first magnetosphere and second magnetic Between layer, wherein, one of first magnetosphere and the second magnetosphere include negative polarization material and institute One of the first magnetosphere and the second magnetosphere are stated including positive polarization material.
13. microwave-assisted magnetic recording systems as claimed in claim 12, wherein, the spin Torque oscillation device also includes bottom and cap rock.
14. microwave-assisted magnetic recording systems as claimed in claim 13, wherein, the cap rock It is arranged on second magnetosphere, second magnetosphere is arranged on first intermediate layer, First intermediate layer is arranged on first magnetosphere, and first magnetosphere is arranged in On the bottom.
15. microwave-assisted magnetic recording systems as claimed in claim 14, wherein, described first Magnetosphere is spin polarization layer and including negative polarization material, and second magnetosphere is that field produces Layer and including positive polarization material.
16. microwave-assisted magnetic recording systems as claimed in claim 14, wherein, described first Magnetosphere is spin polarization layer and including positive polarization material, and second magnetosphere is that field produces Layer and including negative polarization material.
17. microwave-assisted magnetic recording systems as claimed in claim 12, also including in the middle of second Layer and the 3rd magnetosphere.
18. microwave-assisted magnetic recording systems as claimed in claim 17, wherein, the described 3rd Magnetosphere includes positive polarization material.
A kind of 19. hard disk drives, including:
Magnetizing mediums;
Magnetic reading head;And
Magnetic write head, wherein, the magnetic write head includes spin torque oscillator, wherein, it is described from Spin moment agitator includes:
First magnetosphere, wherein, first magnetosphere includes negative polarization material;
Second magnetosphere, wherein, second magnetosphere includes positive polarization material;And
First intermediate layer, first intermediate layer are arranged in first magnetosphere and second magnetic Between layer.
20. hard disk drives as claimed in claim 19, wherein, the spin-torque vibration Device also includes bottom and cap rock.
21. hard disk drives as claimed in claim 20, wherein, the spin-torque vibration Device also includes the second intermediate layer and the 3rd magnetosphere.
CN201510746548.5A 2015-09-25 2015-09-25 Negative polarization spin torque oscillator Pending CN106558321A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114974318A (en) * 2021-02-25 2022-08-30 株式会社东芝 Magnetic head and magnetic recording apparatus

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CN101206865A (en) * 2006-12-06 2008-06-25 希捷科技有限公司 High frequency field assisted write device
CN101295508A (en) * 2007-04-27 2008-10-29 株式会社东芝 Magnetic device, magnetic recording head, and magnetic recording apparatus
US20090080105A1 (en) * 2007-09-25 2009-03-26 Kabushiki Kaisha Toshiba Magnetic recording head and magnetic recording device
US20140146420A1 (en) * 2012-11-29 2014-05-29 Kabushiki Kaisha Toshiba Magnetic head, magnetic head assembly, and magnetic recording/reproduction apparatus

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
CN101206865A (en) * 2006-12-06 2008-06-25 希捷科技有限公司 High frequency field assisted write device
CN101295508A (en) * 2007-04-27 2008-10-29 株式会社东芝 Magnetic device, magnetic recording head, and magnetic recording apparatus
US20090080105A1 (en) * 2007-09-25 2009-03-26 Kabushiki Kaisha Toshiba Magnetic recording head and magnetic recording device
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114974318A (en) * 2021-02-25 2022-08-30 株式会社东芝 Magnetic head and magnetic recording apparatus
US12033676B2 (en) 2021-02-25 2024-07-09 Kabushiki Kaisha Toshiba Magnetic head and magnetic recording device

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