CN106552556B - It is a kind of for synthesizing the thermal insulation material of bulky diamond - Google Patents
It is a kind of for synthesizing the thermal insulation material of bulky diamond Download PDFInfo
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- CN106552556B CN106552556B CN201611112191.6A CN201611112191A CN106552556B CN 106552556 B CN106552556 B CN 106552556B CN 201611112191 A CN201611112191 A CN 201611112191A CN 106552556 B CN106552556 B CN 106552556B
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
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Abstract
It is disclosed by the invention a kind of for synthesizing the thermal insulation material of bulky diamond, it includes the first solid metallic halogen resistant to high temperature, the second solid metallic halogen and titanium dioxide resistant to high temperature, weight ratio shared by the first solid metallic halogen resistant to high temperature is 50%-60%, weight ratio shared by the second solid metallic halogen resistant to high temperature is 20%-33.3%, and weight ratio shared by the titanium dioxide is 16.7%-25%.Compared with the prior art the beneficial effects of the present invention are：The thermal insulation material component is simple, and raw material sources are extensive；The thermal insulation material is set in diamond synthesizing device, while capable of being effectively guaranteed the temperature of bulky diamond synthesis, moreover it is possible to ensure that the bulky diamond of synthesis is not burned out.
Description
Technical field
The present invention relates to diamond production technical fields, and in particular to a kind of for synthesizing the guarantor of bulky diamond
Adiabator.
Background technique
As most hard material is found in the world now, main application is to prepare various diamond tools diamond,
Such as cutting tool, the advanced tools such as grinding knife tool, in addition, compared with other materials, diamond other than with high rigidity,
Its many excellent characteristics gradually found and excavated, such as high heat conductance, extremely low thermal expansion coefficient, low friction system at room temperature
Several, good chemical stability, big forbidden bandwidth, high acoustic propagation velocity, characteristic of semiconductor and high optical transmittance,
Have broad application prospects it in many fields such as machining, microelectronic component, optical window and surface covering.Half
Technical field of conductor materials, not only arithmetic speed is fast for diamond semiconductor, but also compared with heatproof.Silicon wafer can only be born lower than 300
DEG C temperature, gallium arsenide chip heatproof not as good as 400 DEG C, but diamond semiconductor can be heated to nearly 700 DEG C without damage.And gold
The heat dissipation performance of hard rock semiconductor is fabulous, and 30 times faster than silicon wafer.When high-power diamond semiconductor operation, the exclusion of heat
It does not need by means of other radiators, therefore is ideal integrated circuit material.
To classify from acquiring way, diamond can be divided into natural diamond and diamond, natural diamond low output,
Its total amount is unable to satisfy growing industrial demand, and diamond is able to carry out the life of extensive batch
It produces, therefore, diamond is the main source of industrial diamond.Currently, synthesis of artificial diamond mainly uses HPHT skill
Art, and controlled in the synthesis process using temperature gradient method, existing HPHT technology is also highly developed, and is widely applied
In the industrial production of diamond, but through the diamond of prior art synthesis based on little particle diamond,
Its weight is 1 to 2 carats, and then the semiconductor slice 3 × 3mm of undersize being made into little particle diamond, due to half
It is smaller that conductor is sliced size, therefore strong influence application of the diamond in semiconductor field.
So synthesis bulky grain diamond is very necessary, but bulky grain Buddha's warrior attendant is synthesized with existing technology
Stone is also highly difficult, the main reason is that lacking a kind of thermal insulation material used at high operating temperatures in diamond synthesizing device, protects
Adiabator lacks so that due temperature is not achieved in the inside cavity of synthesizer, so, the artificial gold of bulky grain can not be synthesized
Hard rock.
In view of the above drawbacks, creator of the present invention obtains the present invention by prolonged research and practice finally.
Summary of the invention
To solve above-mentioned technological deficiency, the technical solution adopted by the present invention is, provides a kind of for synthesizing bulky grain gold
The thermal insulation material of hard rock, which is characterized in that it includes the first solid metallic halogen resistant to high temperature, the second solid metallic resistant to high temperature
Halogen and titanium dioxide, weight ratio shared by the first solid metallic halogen resistant to high temperature are 50%-60%, and described second is resistance to
Weight ratio shared by the solid metallic halogen of high temperature is 20%-33.3%, and weight ratio shared by the titanium dioxide is 16.7%-
25%.
Preferably, the first solid metallic halogen resistant to high temperature is sodium bromide or sodium iodide or potassium iodide or potassium bromide,
The second solid metallic halogen resistant to high temperature is sodium bromide or sodium iodide or potassium iodide or potassium bromide.
Preferably, the first solid metallic halogen resistant to high temperature is sodium bromide, second solid metallic resistant to high temperature
Halogen is sodium iodide, and weight ratio shared by the first solid metallic halogen resistant to high temperature is 50%, and described second is resistant to high temperature
Weight ratio shared by solid metallic halogen is 25%, and weight ratio shared by the titanium dioxide is 25%.
Preferably, the first solid metallic halogen resistant to high temperature is sodium bromide, second solid metallic resistant to high temperature
Halogen is sodium iodide, and weight ratio shared by the first solid metallic halogen resistant to high temperature is 40%, and described second is resistant to high temperature
Weight ratio shared by solid metallic halogen is 40%, and weight ratio shared by the titanium dioxide is 20%.
Preferably, the first solid metallic halogen resistant to high temperature is sodium bromide, second solid metallic resistant to high temperature
Halogen is sodium iodide, and weight ratio shared by the first solid metallic halogen resistant to high temperature is 50%, and described second is resistant to high temperature
Weight ratio shared by solid metallic halogen is 33.3%, and weight ratio shared by the titanium dioxide is 16.7%.
Preferably, the first solid metallic halogen resistant to high temperature is potassium bromide, second solid metallic resistant to high temperature
Halogen is potassium iodide, and weight ratio shared by the first solid metallic halogen resistant to high temperature is 50%, and described second is resistant to high temperature
Weight ratio shared by solid metallic halogen is 25%, and weight ratio shared by the titanium dioxide is 25%.
Preferably, the first solid metallic halogen resistant to high temperature is potassium bromide, second solid metallic resistant to high temperature
Halogen is potassium iodide, and weight ratio shared by the first solid metallic halogen resistant to high temperature is 40%, and described second is resistant to high temperature
Weight ratio shared by solid metallic halogen is 40%, and weight ratio shared by the titanium dioxide is 20%.
Preferably, the first solid metallic halogen resistant to high temperature is potassium bromide, second solid metallic resistant to high temperature
Halogen is potassium iodide, and weight ratio shared by the first solid metallic halogen resistant to high temperature is 50%, and described second is resistant to high temperature
Weight ratio shared by solid metallic halogen is 33.3%, and weight ratio shared by the titanium dioxide is 16.7%.
Preferably, the first solid metallic halogen resistant to high temperature is sodium iodide, second solid metallic resistant to high temperature
Halogen is potassium bromide, and weight ratio shared by the first solid metallic halogen resistant to high temperature is 50%, and described second is resistant to high temperature
Weight ratio shared by solid metallic halogen is 25%, and weight ratio shared by the titanium dioxide is 25%.
Preferably, the first solid metallic halogen resistant to high temperature is potassium iodide, second solid metallic resistant to high temperature
Halogen is sodium bromide, and weight ratio shared by the first solid metallic halogen resistant to high temperature is 50%, and described second is resistant to high temperature
Weight ratio shared by solid metallic halogen is 25%, and weight ratio shared by the titanium dioxide is 25%.
Compared with the prior art the beneficial effects of the present invention are：The thermal insulation material component is simple, and raw material sources are extensive；It should
Thermal insulation material is set in diamond synthesizing device, while the temperature of bulky diamond synthesis can be effectively guaranteed,
It can also ensure that the bulky diamond of synthesis is not burned out.
Detailed description of the invention
It, below will be to required in embodiment description in order to illustrate more clearly of the technical solution in various embodiments of the present invention
The attached drawing used is briefly described.
Fig. 1 is the structural schematic diagram of bulky diamond synthesizer in the present invention；
Fig. 2 is the current flow diagram of bulky diamond synthesizer in the synthesis process in the present invention.
Digital representation in figure：1- black matrix, the first graphite piece of 2-, 3- metal solvent, the first heat preservation component of 4-, 5- second are kept the temperature
Component, the first conductive component of 6-, the second conductive component of 7-, 8- electrically conductive graphite part, 9- ferromagnetism steel plate, the second graphite piece of 10-,
11- third heat preservation component, the 4th heat preservation component of 12-, the 5th heat preservation component of 13-, the first seal member of 14-, the second sealing of 15-
Part, 16- pyrophyllite.
Specific embodiment
Below in conjunction with attached drawing, the forgoing and additional technical features and advantages are described in more detail.
During the description to the technology of the present invention feature, term, "upper", "lower", "top", "bottom" "inner", "outside" etc. refer to
The orientation or positional relationship shown is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description the application and simplification
Description, rather than the device or element of indication or suggestion meaning must have a particular orientation, constructed and grasped with specific orientation
Make, therefore should not be understood as the limitation to the application.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.
In this application unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense.For the ordinary skill in the art, it can understand that above-mentioned term exists as the case may be
Concrete meaning in the application.
Embodiment 1
As shown in Figure 1, for the structural schematic diagram of bulky diamond synthesizer in the present invention；As shown in Fig. 2, being this hair
The current flow diagram of bright middle bulky diamond synthesizer in the synthesis process.A kind of bulky grain gold provided by the invention
The synthesizer of hard rock, including diamond generation unit, conductive component unit, sealing unit, heat-insulation unit and black matrix 1.
Diamond generation unit includes the first graphite piece 2, metal solvent 3, the first heat preservation component 4, the second heat preservation component 5.
The top of first graphite piece 2 and the first heat preservation component 4 connect, the bottom end of the first graphite piece 2 and 3 company of contact of metal solvent
It connects, the first graphite piece 2, metal solvent 3 and the first heat preservation component 4 are placed in inside the second heat preservation component 5 and are formed by cavity.
First graphite piece 2 provides carbon source for synthesis bulky diamond.
Conductive component unit includes the first conductive component 6, the second conductive component 7 and inner conductive unit, inner conductive list
Member is electrically connected with the first conductive component 6 and the second conductive component 7 respectively.Inner conductive unit includes electrically conductive graphite part 8, conduction
Metalwork 9 and the second graphite piece 10.Diamond generation unit is built in electrically conductive graphite part 8, ferromagnetism steel plate 9 and the second graphite piece
In 10 cavitys surrounded jointly.First heat preservation component, 4 one end is connect with the first graphite piece 2, and the other end is contacted with electrically conductive graphite part 8
Connection.8 top of electrically conductive graphite part and the first conductive component 6 are electrically connected.
Ferromagnetism steel plate 9 is socketed in outside the second heat preservation component 5, and 9 top of ferromagnetism steel plate electrically connects with electrically conductive graphite part 8
It connects, bottom end and 10 top of the second graphite piece are electrically connected.Second graphite piece, 10 top also respectively with 3 bottom end of metal solvent and
Two heat preservation components, 5 bottom end connects, and 10 bottom end of the second graphite piece and the second conductive component 7 are electrically connected.
Black matrix 1 is sleeved on outside inner conductive unit, respectively with 8 side of electrically conductive graphite part, 9 side of ferromagnetism steel plate and
Two graphite pieces, 10 side is connected.The raw material for preparing of black matrix 1 includes at least one solid metallic halogen resistant to high temperature and graphite, wherein
Solid metallic halogen resistant to high temperature can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.It is preferred a kind of in the present embodiment
Solid metallic halogen resistant to high temperature is sodium bromide, by sodium bromide and graphite according to 1:1 weight ratio mixing manufacture is at black matrix material
Material, is pressed into black matrix 1 for black matrix material.Black matrix 1 is preferably thickness 3mm.Heat only in 1 inside cavity of black matrix toward complex radiation, and
It is not conducted to outside 1 cavity of black matrix.
The outside of internal conductive unit and black matrix 1 is arranged in heat-insulation unit comprising third heat preservation component the 11, the 4th is protected
Warm component 12 and the 5th heat preservation component 13.Third heat preservation component 11, the 4th heat preservation component 12 and the common shape of the 5th heat preservation component 13
At cavity, which is sequentially placed black matrix 1, inner conductive unit and diamond generation unit from outside to inside.Black matrix 1 is built in
Among three heat preservation components 11,12 bottom end of the 4th heat preservation component is connect with 8 top of electrically conductive graphite part and 1 tip contact of black matrix respectively.
First through hole is additionally provided on 4th heat preservation component 12, first through hole is for accommodating the first conductive component 6.5th heat preservation component 13 top
End is connected with 10 bottom end of the second graphite piece and 1 bottom end of black matrix respectively.The second through-hole is additionally provided on 5th heat preservation component 13, second is logical
Hole is for accommodating the second conductive component 7.
Thermal insulation material component applied by third heat preservation component 11, the 4th heat preservation component 12 and the 5th heat preservation component 13 is by two
Kind solid metallic halogen resistant to high temperature and titanium dioxide composition, two kinds of solid metallic halogens resistant to high temperature are solid at normal temperature
State, wherein solid metallic halogen resistant to high temperature can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.In the present embodiment
Preferred two kinds of solid metallic halogens resistant to high temperature are sodium bromide and sodium iodide, and the first solid metallic halogen resistant to high temperature is bromination
Sodium, the second solid metallic halogen resistant to high temperature are sodium iodide, by the first solid metallic halogen resistant to high temperature, second resistant to high temperature solid
State metal halide and titanium dioxide are according to 2:1:1 weight ratio mixing compression manufacture is at thermal insulation material.
Sealing unit includes the first seal member 14, the second seal member 15 and pyrophyllite 16, the first seal member 14 peace
Mounted in the top of the 4th heat preservation component 12, third through-hole is additionally provided on the first seal member 14, third through-hole is for accommodating first
Conductive component 6.Second seal member 15 is mounted on the bottom end of the 5th heat preservation component 13, and the second seal member 1 is additionally provided with four-way
Hole, fourth hole is for accommodating the second conductive component 7.Pyrophyllite 16 is wrapped in the outside of third heat preservation component 11, and respectively
With 14 side of the first seal member, 15 side of the second seal member, 12 side of the 4th heat preservation component and 13 side of the 5th heat preservation component
Face connection.
A kind of synthesizer of bulky diamond provided in this embodiment is in 6 face structures, wherein the outermost layer of 4 sides
For pyrophyllite 16, which includes the first seal member 14, pyrophyllite 16 and the first conductive component 6, is somebody's turn to do
Synthesizer bottom surface outermost layer includes the second conductive component 7, the second seal member 15 and pyrophyllite 16.Preferably, which fills
It is set to hexahedron structure, the beneficial effect is that：So that stress is heated evenly diamond during the growth process, big of generation
Particle diamond crystal quality is high, is not easy to be burned out.
In the synthesis process of bulky diamond, the first conductive component 6 and the second conductive component 7 access corresponding electricity simultaneously
Road, current direction as shown in Fig. 2, its followed by the first conductive component 6, the second conductive component 7, electrically conductive graphite part 8, conductive gold
Belong to part 9, the second graphite piece 10 and the second conductive component 7.
A kind of synthetic method of bulky diamond is further related in the present embodiment：
Little particle diamond as crystal seed is placed in the metal solvent of the bulky diamond synthesizer by step S1
Lower part；
Step S2 applies 7.0- to each side, bottom surface and the top surface of the bulky diamond synthesizer respectively
7.7GPa pressure；
First conductive component, the second conductive component are accessed circuit, and are powered by step S3, energized power 5000-
6500kw；
Step S4 keeps diamond generation unit temperature to be not less than 1000 degrees Celsius, makes the diamond growth as crystal seed
100-120 hours.
According to the synthetic method of above-mentioned bulky diamond, bulky diamond is synthesized, wherein in step 1, is adopted
Using mesh number is that 60-80 mesh or so has the little particle diamond in 100 faces as growth crystal seed.In the present embodiment, preferably have 100
For the 60 mesh little particle diamonds in face as crystal seed, crystal seed quantity is 5 or 11 or 23.
The present embodiment preferably applies each side, bottom surface and the top surface of bulky diamond synthesizer respectively
7.1GpaMPa pressure.
Energized power is 5000kw in the present embodiment preferred steps 3.
The diamond growth time is 100 hours in the present embodiment preferred steps 4.
It as shown in table 1, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis is in the present embodiment
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry grade grade.
Table 1
Embodiment 2
This embodiment differs from embodiment 1 in that third heat preservation component 11, the 4th heat preservation component 12 and the 5th heat preservation
Thermal insulation material component applied by component 13 is made of two kinds of solid metallic halogens and titanium dioxide resistant to high temperature, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be sodium bromide and sodium iodide, the first solid metallic halogen resistant to high temperature be sodium bromide, second is resistant to high temperature
Solid metallic halogen is sodium iodide, the first solid metallic halogen resistant to high temperature, the second solid metallic halogen and dioxy resistant to high temperature
Change titanium according to 2:2:1 weight ratio mixing compression manufacture is at thermal insulation material.
The present embodiment applies 7.3Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 5200kw in step 3, selects the 60 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 105 hours, and measuring the diamond synthesizing device internal temperature with indirect method is 1140
Degree Celsius.
It as shown in table 2, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis is in the present embodiment
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry grade grade.
Table 2
Embodiment 3
This embodiment differs from embodiment 1 in that third heat preservation component 11, the 4th heat preservation component 12 and the 5th heat preservation
Thermal insulation material component applied by component 13 is made of two kinds of solid metallic halogens and titanium dioxide resistant to high temperature, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be sodium bromide and sodium iodide, the first solid metallic halogen resistant to high temperature be sodium bromide, second is resistant to high temperature
Solid metallic halogen is sodium iodide, the first solid metallic halogen resistant to high temperature, the second solid metallic halogen and dioxy resistant to high temperature
Change titanium according to 3:2:1 weight ratio mixing compression manufacture is at thermal insulation material.That is the first high temperature resistant in the present embodiment thermal insulation material
Solid metallic halogen sodium bromide, weight ratio shared by the second solid metallic halogen sodium iodide and titanium dioxide resistant to high temperature point
It Wei 50%, 33.3% and 16.7%.
The present embodiment applies 7.5Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 6000kw in step 3, selects the 70 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 110 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1250
Family name's degree.
It as shown in table 3, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis is in the present embodiment
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry grade grade.
Table 3
Embodiment 4
This embodiment differs from embodiment 1 in that third heat preservation component 11, the 4th heat preservation component 12 and the 5th heat preservation
Thermal insulation material component applied by component 13 is made of two kinds of solid metallic halogens and titanium dioxide resistant to high temperature, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be potassium bromide and potassium iodide, the first solid metallic halogen resistant to high temperature be potassium bromide, second is resistant to high temperature
Solid metallic halogen is potassium iodide, the first solid metallic halogen resistant to high temperature, the second solid metallic halogen and dioxy resistant to high temperature
Change titanium according to 2:1:1 weight ratio mixing compression manufacture is at thermal insulation material.
The present embodiment applies 7.0Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 5900kw in step 3, selects the 80 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 108 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1230
Family name's degree.
It as shown in table 4, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis is in the present embodiment
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry grade grade.
Table 4
Embodiment 5
This embodiment differs from embodiment 1 in that third heat preservation component 11, the 4th heat preservation component 12 and the 5th heat preservation
Thermal insulation material component applied by component 13 is made of two kinds of solid metallic halogens and titanium dioxide resistant to high temperature, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be potassium bromide and potassium iodide, the first solid metallic halogen resistant to high temperature be potassium bromide, second is resistant to high temperature
Solid metallic halogen is potassium iodide, the first solid metallic halogen resistant to high temperature, the second solid metallic halogen and dioxy resistant to high temperature
Change titanium according to 2:2:1 weight ratio mixing compression manufacture is at thermal insulation material.
The present embodiment applies 7.2Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 5000kw in step 3, selects the 65 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 115 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1300
Family name's degree.
It as shown in table 5, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis is in the present embodiment
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry grade grade.
Table 5
Embodiment 6
This embodiment differs from embodiment 1 in that third heat preservation component 11, the 4th heat preservation component 12 and the 5th heat preservation
Thermal insulation material component applied by component 13 is made of two kinds of solid metallic halogens and titanium dioxide resistant to high temperature, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be potassium bromide and potassium iodide, the first solid metallic halogen resistant to high temperature be potassium bromide, second is resistant to high temperature
Solid metallic halogen is potassium iodide, the first solid metallic halogen resistant to high temperature, the second solid metallic halogen and dioxy resistant to high temperature
Change titanium according to 3:2:1 weight ratio mixing compression manufacture is at thermal insulation material.That is the first high temperature resistant in the present embodiment thermal insulation material
Solid metallic halogen potassium bromide, weight ratio shared by the second solid metallic halogen potassium iodide resistant to high temperature and titanium dioxide point
It Wei 50%, 33.3% and 16.7%.
The present embodiment applies 7.4Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 5000kw in step 3, selects the 75 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 120 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1260
Family name's degree.
It as shown in table 6, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis is in the present embodiment
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry grade grade.
Table 6
Embodiment 7
This embodiment differs from embodiment 1 in that the raw material for preparing of black matrix 1 includes at least one solid-state resistant to high temperature
Metal halide and graphite, wherein solid metallic halogen resistant to high temperature can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
Preferably a kind of solid metallic halogen resistant to high temperature is potassium iodide in the present embodiment, by potassium iodide and graphite according to 1:1 weight
Black matrix material is pressed into black matrix 1 at black matrix material by ratio mixing manufacture.
The present embodiment applies 7.5Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 5000kw in step 3, selects the 60 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 110 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1100
Family name's degree.
It as shown in table 7, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis is in the present embodiment
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry grade grade.
Table 7
Embodiment 8
This embodiment differs from embodiment 1 in that the raw material for preparing of black matrix 1 includes at least one solid-state resistant to high temperature
Metal halide and graphite, wherein solid metallic halogen resistant to high temperature can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
Preferred sodium bromide and two kinds of potassium iodide solid metallic halogens resistant to high temperature manufactures are at black matrix material in the present embodiment, by sodium bromide,
Potassium iodide and graphite are according to 1:1:Black matrix material is pressed into black matrix 1 at black matrix material by 2 weight ratio mixing manufacture.
The present embodiment applies 7.5Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 5650kw in step 3, selects the 80 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 120 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1090
Family name's degree.
It as shown in table 8, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis is in the present embodiment
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry grade grade.
Table 8
Embodiment 9
The present embodiment difference from Example 2 is that the raw material for preparing of black matrix 1 includes at least one solid-state resistant to high temperature
Metal halide and graphite, wherein solid metallic halogen resistant to high temperature can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
Preferably a kind of solid metallic halogen resistant to high temperature is potassium iodide in the present embodiment, by potassium iodide and graphite according to 2:1 weight
Black matrix material is pressed into black matrix 1 at black matrix material by ratio mixing manufacture.
The present embodiment applies 7.4Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 6500kw in step 3, selects the 60 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 100 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1510
Family name's degree.
It as shown in table 9, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis is in the present embodiment
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry grade grade.
Table 9
Embodiment 10
The present embodiment difference from Example 2 is that the raw material for preparing of black matrix 1 includes at least one solid-state resistant to high temperature
Metal halide and graphite, wherein solid metallic halogen resistant to high temperature can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
Preferably a kind of solid metallic halogen resistant to high temperature is sodium bromide in the present embodiment, by sodium bromide and graphite according to 2:1 weight
Black matrix material is pressed into black matrix 1 at black matrix material by ratio mixing manufacture.
The present embodiment applies 7.0Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 6000kw in step 3, selects the 70 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 110 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1565
Family name's degree.
It as shown in table 10, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reaches jewelry grade grade.
Table 10
Embodiment 11
The present embodiment difference from Example 3 is that the raw material for preparing of black matrix 1 includes at least one solid-state resistant to high temperature
Metal halide and graphite, wherein solid metallic halogen resistant to high temperature can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
Preferred sodium bromide and two kinds of potassium iodide solid metallic halogens resistant to high temperature manufactures are at black matrix material in the present embodiment, by sodium bromide,
Potassium iodide and graphite are according to 3:1:Black matrix material is pressed into black matrix 1 at black matrix material by 2 weight ratio mixing manufacture.
The present embodiment applies 7.7Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 6100kw in step 3, selects the 80 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 120 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1495
Family name's degree.
It as shown in table 11, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reaches jewelry grade grade.
Table 11
Embodiment 12
The present embodiment difference from Example 4 is that the raw material for preparing of black matrix 1 includes at least one solid-state resistant to high temperature
Metal halide and graphite, wherein solid metallic halogen resistant to high temperature can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
Preferably a kind of solid metallic halogen resistant to high temperature is sodium bromide in the present embodiment, by sodium bromide and graphite according to 3:1 weight
Black matrix material is pressed into black matrix 1 at black matrix material by ratio mixing manufacture.
The present embodiment applies 7.2Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 5800kw in step 3, selects the 60 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 100 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1195
Family name's degree.
It as shown in table 12, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reaches jewelry grade grade.
Table 12
Embodiment 13
The present embodiment difference from Example 5 is that the raw material for preparing of black matrix 1 includes at least one solid-state resistant to high temperature
Metal halide and graphite, wherein solid metallic halogen resistant to high temperature can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
Preferably a kind of solid metallic halogen resistant to high temperature is potassium iodide in the present embodiment, by potassium iodide and graphite according to 3:1 weight
Black matrix material is pressed into black matrix 1 at black matrix material by ratio mixing manufacture.
The present embodiment applies 7.5Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 5750kw in step 3, selects the 70 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 110 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1270
Family name's degree.
It as shown in table 13, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reaches jewelry grade grade.
Table 13
Embodiment 14
The present embodiment difference from Example 6 is that the raw material for preparing of black matrix 1 includes at least one solid-state resistant to high temperature
Metal halide and graphite, wherein solid metallic halogen resistant to high temperature can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
Preferred sodium bromide and two kinds of potassium iodide solid metallic halogens resistant to high temperature manufactures are at black matrix material in the present embodiment, by sodium bromide,
Potassium iodide and graphite are according to 2:1:Black matrix material is pressed into black matrix 1 at black matrix material by 1 weight ratio mixing manufacture.
The present embodiment applies 7.1Gpa pressure to each side, bottom surface and the top surface of bulky diamond synthesizer respectively
Power, and energized power is 5600kw in step 3, selects the 80 mesh little particle diamonds with 100 faces as crystal seed, crystal seed quantity
It is 5 or 11 or 23, diamond growth 120 hours, measures the diamond synthesizing device internal temperature with indirect method and taken the photograph for 1260
Family name's degree.
It as shown in table 14, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reaches jewelry grade grade.
Table 14
Embodiment 15
This embodiment differs from embodiment 1 in that third heat preservation component 11, the 4th heat preservation component 12 and the 5th heat preservation
Thermal insulation material component applied by component 13 is made of two kinds of solid metallic halogens and titanium dioxide resistant to high temperature, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be sodium iodide and potassium bromide, the first solid metallic halogen resistant to high temperature be sodium iodide, second is resistant to high temperature
Solid metallic halogen is potassium bromide, the first solid metallic halogen resistant to high temperature, the second solid metallic halogen and dioxy resistant to high temperature
Change titanium according to 2:1:1 weight ratio mixing compression manufacture is at thermal insulation material.The present embodiment is to bulky diamond synthesizer
Each side, bottom surface and top surface apply 7.3Gpa pressure respectively, and in step 3 energized power be 5000kw, selection have 100
For the 75 mesh little particle diamonds in face as crystal seed, crystal seed quantity is 5 or 11 or 23, diamond growth 120 hours, is surveyed with indirect method
Measuring the diamond synthesizing device internal temperature is 1260 degrees Celsius.
It as shown in Table 15, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reaches jewelry grade grade.
Table 15
Embodiment 16
This embodiment differs from embodiment 1 in that third heat preservation component 11, the 4th heat preservation component 12 and the 5th heat preservation
Thermal insulation material component applied by component 13 is made of two kinds of solid metallic halogens and titanium dioxide resistant to high temperature, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be potassium iodide and sodium bromide, the first solid metallic halogen resistant to high temperature be potassium iodide, second is resistant to high temperature
Solid metallic halogen is sodium bromide, the first solid metallic halogen resistant to high temperature, the second solid metallic halogen and dioxy resistant to high temperature
Change titanium according to 2:1:1 weight ratio mixing compression manufacture is at thermal insulation material.The present embodiment is to bulky diamond synthesizer
Each side, bottom surface and top surface apply 7.3Gpa pressure respectively, and in step 3 energized power be 5000kw, selection have 100
For the 75 mesh little particle diamonds in face as crystal seed, crystal seed quantity is 5 or 11 or 23, diamond growth 120 hours, is surveyed with indirect method
Measuring the diamond synthesizing device internal temperature is 1200 degrees Celsius.
It as shown in table 16, is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reaches jewelry grade grade.
Table 16
The foregoing is merely presently preferred embodiments of the present invention, is merely illustrative for the purpose of the present invention, and not restrictive
's.Those skilled in the art understand that in the spirit and scope defined by the claims in the present invention many changes can be carried out to it,
It modifies or even equivalent, but falls in protection scope of the present invention.
Claims (8)
1. a kind of for synthesizing the thermal insulation material of bulky diamond, which is characterized in that it includes the first solid-state gold resistant to high temperature
Belong to halogen, the second solid metallic halogen and titanium dioxide resistant to high temperature, weight shared by the first solid metallic halogen resistant to high temperature
Amount ratio is 50%-60%, and weight ratio shared by the second solid metallic halogen resistant to high temperature is 20%-33.3%, described
Weight ratio shared by titanium dioxide is 16.7%-25%.
2. as described in claim 1 a kind of for synthesizing the thermal insulation material of bulky diamond, which is characterized in that described first
Solid metallic halogen resistant to high temperature is sodium bromide or sodium iodide or potassium iodide or potassium bromide, second solid metallic resistant to high temperature
Halogen is sodium bromide or sodium iodide or potassium iodide or potassium bromide.
3. as claimed in claim 2 a kind of for synthesizing the thermal insulation material of bulky diamond, which is characterized in that described first
Solid metallic halogen resistant to high temperature is sodium bromide, and the second solid metallic halogen resistant to high temperature is sodium iodide, and described first is resistance to
Weight ratio shared by the solid metallic halogen of high temperature is 50%, weight ratio shared by the second solid metallic halogen resistant to high temperature
It is 25%, weight ratio shared by the titanium dioxide is 25%.
4. as claimed in claim 2 a kind of for synthesizing the thermal insulation material of bulky diamond, which is characterized in that described first
Solid metallic halogen resistant to high temperature is sodium bromide, and the second solid metallic halogen resistant to high temperature is sodium iodide, and described first is resistance to
Weight ratio shared by the solid metallic halogen of high temperature is 50%, weight ratio shared by the second solid metallic halogen resistant to high temperature
It is 33.3%, weight ratio shared by the titanium dioxide is 16.7%.
5. as claimed in claim 2 a kind of for synthesizing the thermal insulation material of bulky diamond, which is characterized in that described first
Solid metallic halogen resistant to high temperature is potassium bromide, and the second solid metallic halogen resistant to high temperature is potassium iodide, and described first is resistance to
Weight ratio shared by the solid metallic halogen of high temperature is 50%, weight ratio shared by the second solid metallic halogen resistant to high temperature
It is 25%, weight ratio shared by the titanium dioxide is 25%.
6. as claimed in claim 2 a kind of for synthesizing the thermal insulation material of bulky diamond, which is characterized in that described first
Solid metallic halogen resistant to high temperature is potassium bromide, and the second solid metallic halogen resistant to high temperature is potassium iodide, and described first is resistance to
Weight ratio shared by the solid metallic halogen of high temperature is 50%, weight ratio shared by the second solid metallic halogen resistant to high temperature
It is 33.3%, weight ratio shared by the titanium dioxide is 16.7%.
7. as claimed in claim 2 a kind of for synthesizing the thermal insulation material of bulky diamond, which is characterized in that described first
Solid metallic halogen resistant to high temperature is sodium iodide, and the second solid metallic halogen resistant to high temperature is potassium bromide, and described first is resistance to
Weight ratio shared by the solid metallic halogen of high temperature is 50%, weight ratio shared by the second solid metallic halogen resistant to high temperature
It is 25%, weight ratio shared by the titanium dioxide is 25%.
8. as claimed in claim 2 a kind of for synthesizing the thermal insulation material of bulky diamond, which is characterized in that described first
Solid metallic halogen resistant to high temperature is potassium iodide, and the second solid metallic halogen resistant to high temperature is sodium bromide, and described first is resistance to
Weight ratio shared by the solid metallic halogen of high temperature is 50%, weight ratio shared by the second solid metallic halogen resistant to high temperature
It is 25%, weight ratio shared by the titanium dioxide is 25%.
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| CN116813312A (en) * | 2023-07-11 | 2023-09-29 | 聊城冠县尚敖超硬材料有限公司 | High-heat-insulation material for diamond synthesis and preparation process thereof |
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| CN204724131U (en) * | 2015-06-23 | 2015-10-28 | 鄂州市金刚石技术研发中心 | A kind of bulky grain artificial diamond synthetic block |
| CN204841595U (en) * | 2015-07-18 | 2015-12-09 | 河南飞孟金刚石工业有限公司 | Pyrophillite piece heat preservation of ability self -constriction under high temperature high pressure state |
| CN105617941A (en) * | 2015-12-24 | 2016-06-01 | 河南四方达超硬材料股份有限公司 | Assembly method capable of optimizing temperature distribution of high-temperature and high-pressure cavity |
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