CN106552556A - A kind of insulation material for synthesizing bulky diamond - Google Patents
A kind of insulation material for synthesizing bulky diamond Download PDFInfo
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- CN106552556A CN106552556A CN201611112191.6A CN201611112191A CN106552556A CN 106552556 A CN106552556 A CN 106552556A CN 201611112191 A CN201611112191 A CN 201611112191A CN 106552556 A CN106552556 A CN 106552556A
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- elevated temperatures
- solid metallic
- metallic halogen
- diamond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
Abstract
A kind of insulation material for synthesizing bulky diamond disclosed by the invention, which includes the first resistant to elevated temperatures solid metallic halogen, the second resistant to elevated temperatures solid metallic halogen and titanium dioxide, part by weight shared by the first resistant to elevated temperatures solid metallic halogen is 50% 60%, part by weight shared by the second resistant to elevated temperatures solid metallic halogen is 20% 33.3%, and part by weight shared by the titanium dioxide is 16.7% 25%.Compared with the prior art the beneficial effects of the present invention is：The insulation material component is simple, and raw material sources are extensive；The insulation material is arranged in diamond synthesizing device, while being effectively guaranteed the temperature of bulky diamond synthesis, moreover it is possible to ensure that the bulky diamond of synthesis is not burned out.
Description
Technical field
The present invention relates to diamond production technical field, and in particular to a kind of guarantor for synthesizing bulky diamond
Adiabator.
Background technology
Used as most hard material is found now in the world, its main uses is to prepare various diamond tools to diamond,
The advanced tools such as such as cutting tool, grinding knife tool, in addition, compared with other materials, diamond in addition to high rigidity,
Its many excellent specific property gradually found and excavated, high heat conductance, extremely low thermal coefficient of expansion, low friction system such as under room temperature
Several, good chemical stability, big energy gap, high acoustic propagation velocity, characteristic of semiconductor and high optical transmittance,
Which is made to have broad application prospects in many fields such as machining, microelectronic component, optical window and face coat.Half
Conductor field of material technology, diamond semiconductor not only fast operation, and compared with heatproof.Silicon wafer can only be born less than 300
DEG C temperature, gallium arsenide chip heatproof is not as good as 400 DEG C, but diamond semiconductor can be heated to nearly 700 DEG C and not damage.And gold
The heat dispersion of hard rock quasiconductor is fabulous, 30 times faster than silicon wafer.During high-power diamond semiconductor computing, the exclusion of its heat
Need not by means of other heat abstractors, therefore be preferable integrated circuit material.
Classify from acquiring way, diamond can be divided into natural diamond and diamond, and natural diamond yields poorly,
Its total amount cannot meet growing industrial demand, and diamond can carry out the life of extensive batch
Produce, therefore, diamond is the main source of industrial diamond.At present, synthesis of artificial diamond mainly adopts HPHT skills
Art, and be controlled using temperature gradient method in building-up process, existing HPHT technologies are also highly developed, and extensively apply
In the commercial production of diamond, but by the diamond of prior art synthesis based on little particle diamond,
Its weight is 1 to 2 carats, and then the semiconductor slice 3 × 3mm of undersize made with little particle diamond, due to half
Conductor section size is less, therefore strong influence application of the diamond in semiconductor applications.
So, synthesis bulky grain diamond be it is very necessary, but with existing technology synthesize bulky grain Buddha's warrior attendant
Stone is also highly difficult, and its main cause is to lack a kind of insulation material for using at high operating temperatures in diamond synthesizing device, is protected
Adiabator lacks so that the inside cavity of synthesizer does not reach due temperature, so, it is impossible to synthesize the artificial gold of bulky grain
Hard rock.
In view of drawbacks described above, creator of the present invention passes through prolonged research and practice obtains the present invention finally.
The content of the invention
To solve above-mentioned technological deficiency, the technical solution used in the present invention is, there is provided a kind of golden for synthesizing bulky grain
The insulation material of hard rock, it is characterised in which includes the first resistant to elevated temperatures solid metallic halogen, the second resistant to elevated temperatures solid metallic
Halogen and titanium dioxide, part by weight shared by the first resistant to elevated temperatures solid metallic halogen are 50%-60%, and described second is resistance to
Part by weight shared by the solid metallic halogen of high temperature is 20%-33.3%, and part by weight shared by the titanium dioxide is 16.7%-
25%.
Preferably, the first resistant to elevated temperatures solid metallic halogen is sodium bromide or sodium iodide or potassium iodide or potassium bromide,
The second resistant to elevated temperatures solid metallic halogen is sodium bromide or sodium iodide or potassium iodide or potassium bromide.
Preferably, the first resistant to elevated temperatures solid metallic halogen is sodium bromide, the second resistant to elevated temperatures solid metallic
Halogen is sodium iodide, and part by weight shared by the first resistant to elevated temperatures solid metallic halogen is 50%, and described second is resistant to elevated temperatures
Part by weight shared by solid metallic halogen is 25%, and part by weight shared by the titanium dioxide is 25%.
Preferably, the first resistant to elevated temperatures solid metallic halogen is sodium bromide, the second resistant to elevated temperatures solid metallic
Halogen is sodium iodide, and part by weight shared by the first resistant to elevated temperatures solid metallic halogen is 40%, and described second is resistant to elevated temperatures
Part by weight shared by solid metallic halogen is 40%, and part by weight shared by the titanium dioxide is 20%.
Preferably, the first resistant to elevated temperatures solid metallic halogen is sodium bromide, the second resistant to elevated temperatures solid metallic
Halogen is sodium iodide, and part by weight shared by the first resistant to elevated temperatures solid metallic halogen is 50%, and described second is resistant to elevated temperatures
Part by weight shared by solid metallic halogen is 33.3%, and part by weight shared by the titanium dioxide is 16.7%.
Preferably, the first resistant to elevated temperatures solid metallic halogen is potassium bromide, the second resistant to elevated temperatures solid metallic
Halogen is potassium iodide, and part by weight shared by the first resistant to elevated temperatures solid metallic halogen is 50%, and described second is resistant to elevated temperatures
Part by weight shared by solid metallic halogen is 25%, and part by weight shared by the titanium dioxide is 25%.
Preferably, the first resistant to elevated temperatures solid metallic halogen is potassium bromide, the second resistant to elevated temperatures solid metallic
Halogen is potassium iodide, and part by weight shared by the first resistant to elevated temperatures solid metallic halogen is 40%, and described second is resistant to elevated temperatures
Part by weight shared by solid metallic halogen is 40%, and part by weight shared by the titanium dioxide is 20%.
Preferably, the first resistant to elevated temperatures solid metallic halogen is potassium bromide, the second resistant to elevated temperatures solid metallic
Halogen is potassium iodide, and part by weight shared by the first resistant to elevated temperatures solid metallic halogen is 50%, and described second is resistant to elevated temperatures
Part by weight shared by solid metallic halogen is 33.3%, and part by weight shared by the titanium dioxide is 16.7%.
Preferably, the first resistant to elevated temperatures solid metallic halogen is sodium iodide, the second resistant to elevated temperatures solid metallic
Halogen is potassium bromide, and part by weight shared by the first resistant to elevated temperatures solid metallic halogen is 50%, and described second is resistant to elevated temperatures
Part by weight shared by solid metallic halogen is 25%, and part by weight shared by the titanium dioxide is 25%.
Preferably, the first resistant to elevated temperatures solid metallic halogen is potassium iodide, the second resistant to elevated temperatures solid metallic
Halogen is sodium bromide, and part by weight shared by the first resistant to elevated temperatures solid metallic halogen is 50%, and described second is resistant to elevated temperatures
Part by weight shared by solid metallic halogen is 25%, and part by weight shared by the titanium dioxide is 25%.
Compared with the prior art the beneficial effects of the present invention is：The insulation material component is simple, and raw material sources are extensive；Should
Insulation material is arranged in diamond synthesizing device, while the temperature of bulky diamond synthesis can be effectively guaranteed,
Can also ensure that the bulky diamond of synthesis is not burned out.
Description of the drawings
For the technical scheme being illustrated more clearly that in various embodiments of the present invention, below will be to wanting needed for embodiment description
The accompanying drawing for using is briefly described.
Fig. 1 is the structural representation of bulky diamond synthesizer in the present invention；
Fig. 2 is current direction schematic diagram of the bulky diamond synthesizer in building-up process in the present invention.
In figure, numeral is represented：1- black matrixes, the first graphite pieces of 2-, 3- metal solvents, the first heat preservation components of 4-, 5- second are incubated
Part, the first conductive components of 6-, the second conductive components of 7-, 8- electrically conductive graphite parts, 9- ferromagnetism steel plates, the second graphite pieces of 10-,
The 3rd heat preservation components of 11-, the 4th heat preservation components of 12-, the 5th heat preservation components of 13-, the first seal members of 14-, the second sealings of 15-
Part, 16- pyrophyllites.
Specific embodiment
It is below in conjunction with accompanying drawing, above-mentioned to the present invention to be described in more detail with other technical characteristic and advantage.
During the description to the technology of the present invention feature, term, " on ", D score, " top ", " bottom " " interior ", " outward " etc. refer to
The orientation or position relationship for showing is, based on orientation shown in the drawings or position relationship, to be for only for ease of description the application and simplification
Description, rather than indicate or imply that the device or element of indication must be with specific orientation, with specific azimuth configuration and behaviour
Make, therefore it is not intended that restriction to the application.
Additionally, term " first ", " second " are only used for describing purpose, and it is not intended that indicating or implying relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can express or
Implicitly include one or more this feature.
In this application, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection ", " fixation " etc.
Term should be interpreted broadly.For the ordinary skill in the art, can understand that above-mentioned term exists as the case may be
Concrete meaning in the application.
Embodiment 1
As shown in figure 1, for the structural representation of bulky diamond synthesizer in the present invention；As shown in Fig. 2 being this
Current direction schematic diagram of the bright middle bulky diamond synthesizer in building-up process.A kind of bulky grain gold that the present invention is provided
The synthesizer of hard rock, including diamond signal generating unit, conductive component unit, sealing unit, heat-insulation unit and black matrix 1.
Diamond signal generating unit includes the first graphite piece 2, metal solvent 3, the first heat preservation component 4, the second heat preservation component 5.
The top of the first graphite piece 2 is connected with the contact of the first heat preservation component 4, bottom and 3 company of contact of metal solvent of the first graphite piece 2
Connect, the first graphite piece 2, metal solvent 3 and the first heat preservation component 4 are placed in the cavity formed inside the second heat preservation component 5.
First graphite piece 2 provides carbon source to synthesize bulky diamond.
Conductive component unit includes the first conductive component 6, the second conductive component 7 and inner conductive unit, inner conductive list
Unit is electrically connected with the first conductive component 6 and the second conductive component 7 respectively.Inner conductive unit includes electrically conductive graphite part 8, conduction
Metalwork 9 and the second graphite piece 10.Diamond signal generating unit is built in electrically conductive graphite part 8, ferromagnetism steel plate 9 and the second graphite piece
In 10 cavitys for surrounding jointly.First heat preservation component, 4 one end is connected with the first graphite piece 2, and the other end is contacted with electrically conductive graphite part 8
Connection.8 top of electrically conductive graphite part is electrically connected with the first conductive component 6.
Ferromagnetism steel plate 9 is socketed in outside the second heat preservation component 5, and 9 top of ferromagnetism steel plate is electrically connected with electrically conductive graphite part 8
Connect, its bottom is electrically connected with 10 top of the second graphite piece.Second graphite piece, 10 top also respectively with 3 bottom of metal solvent and
The contact connection of two heat preservation components, 5 bottom, 10 bottom of the second graphite piece is electrically connected with the second conductive component 7.
Black matrix 1 is sleeved on outside inner conductive unit, respectively with 8 side of electrically conductive graphite part, 9 side of ferromagnetism steel plate and
Two graphite pieces, 10 side is connected.The preparing raw material of black matrix 1 includes at least one resistant to elevated temperatures solid metallic halogen and graphite, wherein
Resistant to elevated temperatures solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.It is preferred a kind of in the present embodiment
Resistant to elevated temperatures solid metallic halogen is sodium bromide, by sodium bromide and graphite according to 1:1 part by weight mixing is manufactured into black matrix material
Black matrix material is pressed into black matrix 1 by material.Black matrix 1 is preferably thickness 3mm.Heat only in 1 inside cavity of black matrix toward complex radiation, and
Do not conduct to outside 1 cavity of black matrix.
Heat-insulation unit is arranged on the outside of inner conductive unit and black matrix 1, and which includes the 3rd heat preservation component 11, the 4th guarantor
Warm part 12 and the 5th heat preservation component 13.3rd heat preservation component 11,13 common shape of the 4th heat preservation component 12 and the 5th heat preservation component
Into cavity, the cavity is sequentially placed black matrix 1, inner conductive unit and diamond signal generating unit from outside to inside.Black matrix 1 is built in
Among three heat preservation components 11,12 bottom of the 4th heat preservation component is connected with 8 top of electrically conductive graphite part and 1 tip contact of black matrix respectively.
First through hole is additionally provided with 4th heat preservation component 12, first through hole is used to accommodate the first conductive component 6.5th heat preservation component 13 is pushed up
End is connected with 10 bottom of the second graphite piece and 1 bottom of black matrix respectively.The second through hole is additionally provided with 5th heat preservation component 13, second leads to
Hole is used to accommodate the second conductive component 7.
The insulation material component applied by 3rd heat preservation component 11, the 4th heat preservation component 12 and the 5th heat preservation component 13 is by two
Resistant to elevated temperatures solid metallic halogen and titanium dioxide composition are planted, two kinds of resistant to elevated temperatures solid metallic halogens are solid at normal temperatures
State, wherein resistant to elevated temperatures solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.In the present embodiment
Preferred two kinds of resistant to elevated temperatures solid metallic halogens are sodium bromide and sodium iodide, and the first resistant to elevated temperatures solid metallic halogen is bromination
Sodium, the second resistant to elevated temperatures solid metallic halogen are sodium iodide, by the first resistant to elevated temperatures solid metallic halogen, second resistant to elevated temperatures solid
State metal halide and titanium dioxide are according to 2:1:1 part by weight mixing compression is manufactured into insulation material.
Sealing unit includes the first seal member 14, the second seal member 15 and pyrophyllite 16, and the first seal member 14 is pacified
The top of the 4th heat preservation component 12 is mounted in, third through-hole on the first seal member 14, is additionally provided with, third through-hole is used to accommodate first
Conductive component 6.Second seal member 15 is arranged on the bottom of the 5th heat preservation component 13, and the second seal member 1 is additionally provided with four-way
Hole, fourth hole are used to accommodate the second conductive component 7.Pyrophyllite 16 is wrapped in the outside of the 3rd heat preservation component 11, and difference
With 14 side of the first seal member, 15 side of the second seal member, 12 side of the 4th heat preservation component and 13 side of the 5th heat preservation component
Face connects.
A kind of synthesizer of bulky diamond that the present embodiment is provided is in 6 face structures, wherein the outermost layer of 4 sides
For pyrophyllite 16, the synthesizer top surface outermost layer includes the first seal member 14, pyrophyllite 16 and the first conductive component 6, should
Synthesizer bottom surface outermost layer includes the second conductive component 7, the second seal member 15 and pyrophyllite 16.Preferably, the synthesis is filled
Hexahedron structure is set to, its advantage is：So that diamond stress in growth course is heated evenly, big of generation
Particle diamond crystal quality is high, is difficult to be burned out.
In the building-up process of bulky diamond, the first conductive component 6 and the second conductive component 7 access corresponding electricity simultaneously
Road, the sense of current is as shown in Fig. 2 which flows through the first conductive component 6, the second conductive component 7, electrically conductive graphite part 8, conductive gold successively
Category part 9, the second graphite piece 10 and the second conductive component 7.
A kind of synthetic method of bulky diamond is further related in the present embodiment：
Little particle diamond as crystal seed is positioned over the metal solvent of the bulky diamond synthesizer by step S1
Bottom；
Step S2, each side, bottom surface and top surface to the bulky diamond synthesizer apply 7.0- respectively
7.7GPa pressure；
First conductive component, the second conductive component are accessed circuit, and are powered by step S3, and energized power is 5000-
6500kw；
Step S4, keeps diamond signal generating unit temperature to be not less than 1000 degrees Celsius, makes the diamond film as crystal seed
100-120 hours.
According to the synthetic method of above-mentioned bulky diamond, bulky diamond is synthesized, wherein in step 1, adopted
It is little particle diamond of the 60-80 mesh or so with 100 faces as growth crystal seed with mesh number.In the present embodiment, preferably with 100
Used as crystal seed, crystal seed quantity is 5 or 11 or 23 to the 60 mesh little particle diamond in face.
Each side of the present embodiment preferred pair bulky diamond synthesizer, bottom surface and top surface apply respectively
7.1GpaMPa pressure.
In the present embodiment preferred steps 3, energized power is 5000kw.
In the present embodiment preferred steps 4, the diamond film time is 100 hours.
As shown in table 1, it is parameters table before and after diamond synthesizing in the present embodiment.In the present embodiment, diamond synthesis are
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 1
Embodiment 2
The present embodiment difference from Example 1 is that the 3rd heat preservation component 11, the 4th heat preservation component 12 and the 5th are incubated
The insulation material component applied by part 13 is made up of two kinds of resistant to elevated temperatures solid metallic halogens and titanium dioxide, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be sodium bromide and sodium iodide, the first resistant to elevated temperatures solid metallic halogen is sodium bromide, and second is resistant to elevated temperatures
Solid metallic halogen be sodium iodide, the first resistant to elevated temperatures solid metallic halogen, the second resistant to elevated temperatures solid metallic halogen and dioxy
Change titanium according to 2:2:1 part by weight mixing compression is manufactured into insulation material.
The present embodiment applies 7.3Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 5200kw, selects the 60 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 105 hours, and to measure the diamond synthesizing device internal temperature with indirect method be 1140
Degree Celsius.
As shown in table 2, it is parameters table before and after diamond synthesizing in the present embodiment.In the present embodiment, diamond synthesis are
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 2
Embodiment 3
The present embodiment difference from Example 1 is that the 3rd heat preservation component 11, the 4th heat preservation component 12 and the 5th are incubated
The insulation material component applied by part 13 is made up of two kinds of resistant to elevated temperatures solid metallic halogens and titanium dioxide, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be sodium bromide and sodium iodide, the first resistant to elevated temperatures solid metallic halogen is sodium bromide, and second is resistant to elevated temperatures
Solid metallic halogen be sodium iodide, the first resistant to elevated temperatures solid metallic halogen, the second resistant to elevated temperatures solid metallic halogen and dioxy
Change titanium according to 3:2:1 part by weight mixing compression is manufactured into insulation material.That is the first high temperature resistant in the present embodiment insulation material
Solid metallic halogen sodium bromide, the part by weight shared by the second resistant to elevated temperatures solid metallic halogen sodium iodide and titanium dioxide point
Wei 50%, 33.3% and 16.7%.
The present embodiment applies 7.5Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 6000kw, selects the 70 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 110 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1250
Family name's degree.
As shown in table 3, it is parameters table before and after diamond synthesizing in the present embodiment.In the present embodiment, diamond synthesis are
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 3
Embodiment 4
The present embodiment difference from Example 1 is that the 3rd heat preservation component 11, the 4th heat preservation component 12 and the 5th are incubated
The insulation material component applied by part 13 is made up of two kinds of resistant to elevated temperatures solid metallic halogens and titanium dioxide, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be potassium bromide and potassium iodide, the first resistant to elevated temperatures solid metallic halogen is potassium bromide, and second is resistant to elevated temperatures
Solid metallic halogen be potassium iodide, the first resistant to elevated temperatures solid metallic halogen, the second resistant to elevated temperatures solid metallic halogen and dioxy
Change titanium according to 2:1:1 part by weight mixing compression is manufactured into insulation material.
The present embodiment applies 7.0Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 5900kw, selects the 80 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 108 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1230
Family name's degree.
As shown in table 4, it is parameters table before and after diamond synthesizing in the present embodiment.In the present embodiment, diamond synthesis are
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 4
Embodiment 5
The present embodiment difference from Example 1 is that the 3rd heat preservation component 11, the 4th heat preservation component 12 and the 5th are incubated
The insulation material component applied by part 13 is made up of two kinds of resistant to elevated temperatures solid metallic halogens and titanium dioxide, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be potassium bromide and potassium iodide, the first resistant to elevated temperatures solid metallic halogen is potassium bromide, and second is resistant to elevated temperatures
Solid metallic halogen be potassium iodide, the first resistant to elevated temperatures solid metallic halogen, the second resistant to elevated temperatures solid metallic halogen and dioxy
Change titanium according to 2:2:1 part by weight mixing compression is manufactured into insulation material.
The present embodiment applies 7.2Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 5000kw, selects the 65 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 115 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1300
Family name's degree.
As shown in table 5, it is parameters table before and after diamond synthesizing in the present embodiment.In the present embodiment, diamond synthesis are
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 5
Embodiment 6
The present embodiment difference from Example 1 is that the 3rd heat preservation component 11, the 4th heat preservation component 12 and the 5th are incubated
The insulation material component applied by part 13 is made up of two kinds of resistant to elevated temperatures solid metallic halogens and titanium dioxide, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be potassium bromide and potassium iodide, the first resistant to elevated temperatures solid metallic halogen is potassium bromide, and second is resistant to elevated temperatures
Solid metallic halogen be potassium iodide, the first resistant to elevated temperatures solid metallic halogen, the second resistant to elevated temperatures solid metallic halogen and dioxy
Change titanium according to 3:2:1 part by weight mixing compression is manufactured into insulation material.That is the first high temperature resistant in the present embodiment insulation material
Solid metallic halogen potassium bromide, the part by weight shared by the second resistant to elevated temperatures solid metallic halogen potassium iodide and titanium dioxide point
Wei 50%, 33.3% and 16.7%.
The present embodiment applies 7.4Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 5000kw, selects the 75 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 120 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1260
Family name's degree.
As shown in table 6, it is parameters table before and after diamond synthesizing in the present embodiment.In the present embodiment, diamond synthesis are
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 6
Embodiment 7
The present embodiment difference from Example 1 is that the preparing raw material of black matrix 1 includes at least one resistant to elevated temperatures solid-state
Metal halide and graphite, wherein resistant to elevated temperatures solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
In the present embodiment, a kind of preferred resistant to elevated temperatures solid metallic halogen is potassium iodide, by potassium iodide and graphite according to 1:1 weight
Ratio mixing is manufactured into black matrix material, and black matrix material is pressed into black matrix 1.
The present embodiment applies 7.5Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 5000kw, selects the 60 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 110 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1100
Family name's degree.
As shown in table 7, it is parameters table before and after diamond synthesizing in the present embodiment.In the present embodiment, diamond synthesis are
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 7
Embodiment 8
The present embodiment difference from Example 1 is that the preparing raw material of black matrix 1 includes at least one resistant to elevated temperatures solid-state
Metal halide and graphite, wherein resistant to elevated temperatures solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
In the present embodiment, preferred sodium bromide and the resistant to elevated temperatures solid metallic halogen of two kinds of potassium iodide are manufactured into black matrix material, by sodium bromide,
Potassium iodide and graphite are according to 1:1:2 part by weight mixing is manufactured into black matrix material, and black matrix material is pressed into black matrix 1.
The present embodiment applies 7.5Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 5650kw, selects the 80 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 120 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1090
Family name's degree.
As shown in table 8, it is parameters table before and after diamond synthesizing in the present embodiment.In the present embodiment, diamond synthesis are
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 8
Embodiment 9
The present embodiment difference from Example 2 is that the preparing raw material of black matrix 1 includes at least one resistant to elevated temperatures solid-state
Metal halide and graphite, wherein resistant to elevated temperatures solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
In the present embodiment, a kind of preferred resistant to elevated temperatures solid metallic halogen is potassium iodide, by potassium iodide and graphite according to 2:1 weight
Ratio mixing is manufactured into black matrix material, and black matrix material is pressed into black matrix 1.
The present embodiment applies 7.4Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 6500kw, selects the 60 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 100 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1510
Family name's degree.
As shown in table 9, it is parameters table before and after diamond synthesizing in the present embodiment.In the present embodiment, diamond synthesis are
Hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 9
Embodiment 10
The present embodiment difference from Example 2 is that the preparing raw material of black matrix 1 includes at least one resistant to elevated temperatures solid-state
Metal halide and graphite, wherein resistant to elevated temperatures solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
In the present embodiment, a kind of preferred resistant to elevated temperatures solid metallic halogen is sodium bromide, by sodium bromide and graphite according to 2:1 weight
Ratio mixing is manufactured into black matrix material, and black matrix material is pressed into black matrix 1.
The present embodiment applies 7.0Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 6000kw, selects the 70 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 110 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1565
Family name's degree.
As shown in table 10, it is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 10
Embodiment 11
The present embodiment difference from Example 3 is that the preparing raw material of black matrix 1 includes at least one resistant to elevated temperatures solid-state
Metal halide and graphite, wherein resistant to elevated temperatures solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
In the present embodiment, preferred sodium bromide and the resistant to elevated temperatures solid metallic halogen of two kinds of potassium iodide are manufactured into black matrix material, by sodium bromide,
Potassium iodide and graphite are according to 3:1:2 part by weight mixing is manufactured into black matrix material, and black matrix material is pressed into black matrix 1.
The present embodiment applies 7.7Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 6100kw, selects the 80 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 120 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1495
Family name's degree.
As shown in table 11, it is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 11
Embodiment 12
The present embodiment difference from Example 4 is that the preparing raw material of black matrix 1 includes at least one resistant to elevated temperatures solid-state
Metal halide and graphite, wherein resistant to elevated temperatures solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
In the present embodiment, a kind of preferred resistant to elevated temperatures solid metallic halogen is sodium bromide, by sodium bromide and graphite according to 3:1 weight
Ratio mixing is manufactured into black matrix material, and black matrix material is pressed into black matrix 1.
The present embodiment applies 7.2Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 5800kw, selects the 60 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 100 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1195
Family name's degree.
As shown in table 12, it is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 12
Embodiment 13
The present embodiment difference from Example 5 is that the preparing raw material of black matrix 1 includes at least one resistant to elevated temperatures solid-state
Metal halide and graphite, wherein resistant to elevated temperatures solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
In the present embodiment, a kind of preferred resistant to elevated temperatures solid metallic halogen is potassium iodide, by potassium iodide and graphite according to 3:1 weight
Ratio mixing is manufactured into black matrix material, and black matrix material is pressed into black matrix 1.
The present embodiment applies 7.5Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 5750kw, selects the 70 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 110 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1270
Family name's degree.
As shown in table 13, it is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 13
Embodiment 14
The present embodiment difference from Example 6 is that the preparing raw material of black matrix 1 includes at least one resistant to elevated temperatures solid-state
Metal halide and graphite, wherein resistant to elevated temperatures solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.
In the present embodiment, preferred sodium bromide and the resistant to elevated temperatures solid metallic halogen of two kinds of potassium iodide are manufactured into black matrix material, by sodium bromide,
Potassium iodide and graphite are according to 2:1:1 part by weight mixing is manufactured into black matrix material, and black matrix material is pressed into black matrix 1.
The present embodiment applies 7.1Gpa pressures respectively to each side of bulky diamond synthesizer, bottom surface and top surface
In power, and step 3, energized power is 5600kw, selects the 80 mesh little particle diamond with 100 faces as crystal seed, crystal seed quantity
For 5 or 11 or 23, diamond film 120 hours measures the diamond synthesizing device internal temperature with indirect method and takes the photograph for 1260
Family name's degree.
As shown in table 14, it is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 14
Embodiment 15
The present embodiment difference from Example 1 is that the 3rd heat preservation component 11, the 4th heat preservation component 12 and the 5th are incubated
The insulation material component applied by part 13 is made up of two kinds of resistant to elevated temperatures solid metallic halogens and titanium dioxide, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be sodium iodide and potassium bromide, the first resistant to elevated temperatures solid metallic halogen is sodium iodide, and second is resistant to elevated temperatures
Solid metallic halogen be potassium bromide, the first resistant to elevated temperatures solid metallic halogen, the second resistant to elevated temperatures solid metallic halogen and dioxy
Change titanium according to 2:1:1 part by weight mixing compression is manufactured into insulation material.The present embodiment is to bulky diamond synthesizer
Each side, bottom surface and top surface apply 7.3Gpa pressure respectively, and in step 3, energized power is 5000kw, is selected with 100
The 75 mesh little particle diamond in face are 5 or 11 or 23 as crystal seed, crystal seed quantity, and diamond film 120 hours is surveyed with indirect method
The diamond synthesizing device internal temperature is measured for 1260 degrees Celsius.
As shown in Table 15, it is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 15
Embodiment 16
The present embodiment difference from Example 1 is that the 3rd heat preservation component 11, the 4th heat preservation component 12 and the 5th are incubated
The insulation material component applied by part 13 is made up of two kinds of resistant to elevated temperatures solid metallic halogens and titanium dioxide, wherein high temperature resistant
Solid metallic halogen can be sodium bromide or sodium iodide or potassium iodide or potassium bromide.Preferred two kinds of high temperature resistants in the present embodiment
Solid metallic halogen be potassium iodide and sodium bromide, the first resistant to elevated temperatures solid metallic halogen is potassium iodide, and second is resistant to elevated temperatures
Solid metallic halogen be sodium bromide, the first resistant to elevated temperatures solid metallic halogen, the second resistant to elevated temperatures solid metallic halogen and dioxy
Change titanium according to 2:1:1 part by weight mixing compression is manufactured into insulation material.The present embodiment is to bulky diamond synthesizer
Each side, bottom surface and top surface apply 7.3Gpa pressure respectively, and in step 3, energized power is 5000kw, is selected with 100
The 75 mesh little particle diamond in face are 5 or 11 or 23 as crystal seed, crystal seed quantity, and diamond film 120 hours is surveyed with indirect method
The diamond synthesizing device internal temperature is measured for 1200 degrees Celsius.
As shown in table 16, it is parameters table before and after diamond synthesizing in the present embodiment.Diamond synthesis in the present embodiment
For hexahedron crystal, free from admixture in crystal, crystal reach jewelry level grade.
Table 16
Presently preferred embodiments of the present invention is the foregoing is only, is merely illustrative for the purpose of the present invention, and it is non-limiting
's.Those skilled in the art understanding, can carry out many changes to which in the spirit and scope limited by the claims in the present invention,
Modification, in addition it is equivalent, but fall within protection scope of the present invention.
Claims (10)
1. a kind of insulation material for synthesizing bulky diamond, it is characterised in which includes the first resistant to elevated temperatures solid-state gold
Category halogen, the second resistant to elevated temperatures solid metallic halogen and titanium dioxide, weight shared by the first resistant to elevated temperatures solid metallic halogen
Amount ratio is 50%-60%, and part by weight shared by the second resistant to elevated temperatures solid metallic halogen is 20%-33.3%, described
Part by weight shared by titanium dioxide is 16.7%-25%.
2. a kind of insulation material for synthesizing bulky diamond as claimed in claim 1, it is characterised in that described first
Resistant to elevated temperatures solid metallic halogen is sodium bromide or sodium iodide or potassium iodide or potassium bromide, the second resistant to elevated temperatures solid metallic
Halogen is sodium bromide or sodium iodide or potassium iodide or potassium bromide.
3. a kind of insulation material for synthesizing bulky diamond as claimed in claim 2, it is characterised in that described first
Resistant to elevated temperatures solid metallic halogen is sodium bromide, and the second resistant to elevated temperatures solid metallic halogen is sodium iodide, and described first is resistance to
Part by weight shared by the solid metallic halogen of high temperature is 50%, part by weight shared by the second resistant to elevated temperatures solid metallic halogen
For 25%, part by weight shared by the titanium dioxide is 25%.
4. a kind of insulation material for synthesizing bulky diamond as claimed in claim 2, it is characterised in that described first
Resistant to elevated temperatures solid metallic halogen is sodium bromide, and the second resistant to elevated temperatures solid metallic halogen is sodium iodide, and described first is resistance to
Part by weight shared by the solid metallic halogen of high temperature is 40%, part by weight shared by the second resistant to elevated temperatures solid metallic halogen
For 40%, part by weight shared by the titanium dioxide is 20%.
5. a kind of insulation material for synthesizing bulky diamond as claimed in claim 2, it is characterised in that described first
Resistant to elevated temperatures solid metallic halogen is sodium bromide, and the second resistant to elevated temperatures solid metallic halogen is sodium iodide, and described first is resistance to
Part by weight shared by the solid metallic halogen of high temperature is 50%, part by weight shared by the second resistant to elevated temperatures solid metallic halogen
For 33.3%, part by weight shared by the titanium dioxide is 16.7%.
6. a kind of insulation material for synthesizing bulky diamond as claimed in claim 2, it is characterised in that described first
Resistant to elevated temperatures solid metallic halogen is potassium bromide, and the second resistant to elevated temperatures solid metallic halogen is potassium iodide, and described first is resistance to
Part by weight shared by the solid metallic halogen of high temperature is 50%, part by weight shared by the second resistant to elevated temperatures solid metallic halogen
For 25%, part by weight shared by the titanium dioxide is 25%.
7. a kind of insulation material for synthesizing bulky diamond as claimed in claim 2, it is characterised in that described first
Resistant to elevated temperatures solid metallic halogen is potassium bromide, and the second resistant to elevated temperatures solid metallic halogen is potassium iodide, and described first is resistance to
Part by weight shared by the solid metallic halogen of high temperature is 40%, part by weight shared by the second resistant to elevated temperatures solid metallic halogen
For 40%, part by weight shared by the titanium dioxide is 20%.
8. a kind of insulation material for synthesizing bulky diamond as claimed in claim 2, it is characterised in that described first
Resistant to elevated temperatures solid metallic halogen is potassium bromide, and the second resistant to elevated temperatures solid metallic halogen is potassium iodide, and described first is resistance to
Part by weight shared by the solid metallic halogen of high temperature is 50%, part by weight shared by the second resistant to elevated temperatures solid metallic halogen
For 33.3%, part by weight shared by the titanium dioxide is 16.7%.
9. a kind of insulation material for synthesizing bulky diamond as claimed in claim 2, it is characterised in that described first
Resistant to elevated temperatures solid metallic halogen is sodium iodide, and the second resistant to elevated temperatures solid metallic halogen is potassium bromide, and described first is resistance to
Part by weight shared by the solid metallic halogen of high temperature is 50%, part by weight shared by the second resistant to elevated temperatures solid metallic halogen
For 25%, part by weight shared by the titanium dioxide is 25%.
10. a kind of insulation material for synthesizing bulky diamond as claimed in claim 2, it is characterised in that described the
One resistant to elevated temperatures solid metallic halogen be potassium iodide, the second resistant to elevated temperatures solid metallic halogen be sodium bromide, described first
Part by weight shared by resistant to elevated temperatures solid metallic halogen is 50%, weight ratio shared by the second resistant to elevated temperatures solid metallic halogen
Example is 25%, and part by weight shared by the titanium dioxide is 25%.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115041099A (en) * | 2022-07-19 | 2022-09-13 | 彭伟华 | Diamond synthesis block and preparation method of diamond |
| CN116813312A (en) * | 2023-07-11 | 2023-09-29 | 聊城冠县尚敖超硬材料有限公司 | High-heat-insulation material for diamond synthesis and preparation process thereof |
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| CN201832613U (en) * | 2010-11-03 | 2011-05-18 | 开封贝斯科超硬材料有限公司 | Superhard material synthesis block assembly element |
| CN204724131U (en) * | 2015-06-23 | 2015-10-28 | 鄂州市金刚石技术研发中心 | A kind of bulky grain artificial diamond synthetic block |
| CN204841595U (en) * | 2015-07-18 | 2015-12-09 | 河南飞孟金刚石工业有限公司 | Pyrophillite piece heat preservation of ability self -constriction under high temperature high pressure state |
| CN105617941A (en) * | 2015-12-24 | 2016-06-01 | 河南四方达超硬材料股份有限公司 | Assembly method capable of optimizing temperature distribution of high-temperature and high-pressure cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201832613U (en) * | 2010-11-03 | 2011-05-18 | 开封贝斯科超硬材料有限公司 | Superhard material synthesis block assembly element |
| CN204724131U (en) * | 2015-06-23 | 2015-10-28 | 鄂州市金刚石技术研发中心 | A kind of bulky grain artificial diamond synthetic block |
| CN204841595U (en) * | 2015-07-18 | 2015-12-09 | 河南飞孟金刚石工业有限公司 | Pyrophillite piece heat preservation of ability self -constriction under high temperature high pressure state |
| CN105617941A (en) * | 2015-12-24 | 2016-06-01 | 河南四方达超硬材料股份有限公司 | Assembly method capable of optimizing temperature distribution of high-temperature and high-pressure cavity |
Cited By (3)
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| CN115041099A (en) * | 2022-07-19 | 2022-09-13 | 彭伟华 | Diamond synthesis block and preparation method of diamond |
| CN115041099B (en) * | 2022-07-19 | 2023-11-17 | 彭伟华 | Diamond synthetic block and preparation method of diamond |
| CN116813312A (en) * | 2023-07-11 | 2023-09-29 | 聊城冠县尚敖超硬材料有限公司 | High-heat-insulation material for diamond synthesis and preparation process thereof |
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| CN106552556B (en) | 2018-11-20 |
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