CN106532265B - Directional reconfigurable microelectronic mechanical antenna and preparation method thereof - Google Patents

Directional reconfigurable microelectronic mechanical antenna and preparation method thereof Download PDF

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CN106532265B
CN106532265B CN201611041699.1A CN201611041699A CN106532265B CN 106532265 B CN106532265 B CN 106532265B CN 201611041699 A CN201611041699 A CN 201611041699A CN 106532265 B CN106532265 B CN 106532265B
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cantilever beam
antenna
pull
sacrificial layer
mems
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CN106532265A (en
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王德波
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Nanjing University of Posts and Telecommunications
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Nanjing University of Posts and Telecommunications
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/01Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the shape of the antenna or antenna system
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021Transducers for transforming electrical into mechanical energy or vice versa
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015Cantilevers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

Abstract

The invention discloses a directional reconfigurable micro-electromechanical antenna and a preparation method thereof. Voltages with the same polarity and different magnitudes are applied to the pull-down electrodes on the same side of the cantilever beam, so that the MEMS cantilever beam can be bent to different degrees, and small reconstruction of the microwave antenna directivity is realized; voltages with opposite polarities are applied to the pull-down electrodes on the left side and the right side of the cantilever beam, so that the two sides of the MEMS cantilever beam can be bent in opposite directions, and the large reconstruction of the microwave antenna directivity is realized.

Description

Directional reconfigurable microelectronic mechanical antenna and preparation method thereof
Technical Field
The invention relates to a micro-strip antenna based on a micro-electro-mechanical system (MEMS) technology, in particular to a micro-electro-mechanical antenna with reconfigurable directivity and a preparation method thereof, belonging to the field of micro-electro-mechanical systems.
Background
As an indispensable and very important component in a radio system, the quality of the antenna itself directly affects the overall performance of the radio system. The task of the antenna is to convert the high-frequency current energy (guided wave) output by the transmitter into electromagnetic wave for radiation, or to convert the space electric wave signal into high-frequency current energy for the receiver.
In order to achieve the above purpose well, the classical single-mode antenna cannot meet the requirements of the radar system on beam forming, fast scanning and the like, which makes the directional reconfigurable antenna widely valued and rapidly developed.
In recent 20 years, with the rapid development of the MEMS technology, the MEMS cantilever structure has been studied deeply, so that it is possible to reconstruct the directivity of the antenna by using the MEMS technology.
Disclosure of Invention
The invention aims to solve the technical problem of providing a micro-electromechanical antenna with reconfigurable directivity and a preparation method thereof.
The invention adopts the following technical scheme for solving the technical problems:
on one hand, the invention provides a directional reconfigurable micro-electromechanical antenna, which takes gallium arsenide as a substrate, and a micro-strip antenna feeder line, a star-structure micro-strip antenna radiating element, an MEMS cantilever beam, a cantilever beam pier, a cantilever beam pull-down electrode, a dielectric layer and a sacrificial layer are arranged on the substrate; any four radiation ends of the star-structure microstrip antenna radiation element are respectively connected with a cantilever beam bridge pier, each cantilever beam bridge pier is connected with an MEMS (micro electro mechanical System) cantilever beam, cantilever beam pull-down electrodes are respectively arranged on two sides of each cantilever beam bridge pier below each MEMS cantilever beam, a dielectric layer is arranged on each cantilever beam pull-down electrode, and a sacrificial layer is arranged between the dielectric layer on each cantilever beam pull-down electrode and the corresponding MEMS cantilever beam; and the radiation end of the star-structure microstrip antenna radiation element which is not connected with the cantilever bridge pier is connected with the microstrip antenna feeder line.
As a further optimization scheme of the invention, each cantilever beam pull-down electrode and each cantilever beam pier are connected with the substrate.
As a further optimization scheme of the invention, the dielectric layer is SiN, and the sacrificial layer is a polyimide sacrificial layer.
As a further optimization scheme of the invention, the four cantilever beam piers are the same, and the four MEMS cantilever beams are the same.
On the other hand, the invention also provides a preparation method of the micro-electromechanical antenna, which comprises the following specific steps:
1) Selecting undoped semi-insulating gallium arsenide as a substrate;
2) Removing the photoresist at the radiation elements of the cantilever beam pull-down electrode, the microstrip antenna feeder line and the star-shaped microstrip antenna;
3) Sputtering gold to form a cantilever beam pull-down electrode, a microstrip antenna feeder line and a star-structure microstrip antenna radiating element;
4) Depositing a silicon nitride dielectric layer above the cantilever beam pull-down electrode;
5) Photoetching and etching the silicon nitride dielectric layer, and reserving the silicon nitride dielectric layer between the cantilever beam and the cantilever beam pull-down electrode below the cantilever beam;
6) Coating a polyimide sacrificial layer with the thickness of 1.6 mu m on the gallium arsenide substrate, photoetching the polyimide sacrificial layer, and keeping the sacrificial layer below the cantilever beam;
7) Sputtering titanium/gold/titanium to form a cantilever beam and a corresponding cantilever beam pier;
8) Removing the photoresist at the cantilever beam and the corresponding cantilever beam pier;
9) Electroplating gold to form the cantilever beam and the corresponding cantilever beam pier;
10 Release sacrificial layer): and releasing the polyimide sacrificial layer below the cantilever beam structure by using a developing solution, and dehydrating by using absolute ethyl alcohol to form the suspended cantilever beam structure.
As a further optimization of the invention, in step 3, the thickness of gold is 0.3 μm.
As a further optimization scheme of the invention, in step 4, the silicon nitride film is grown by a plasma enhanced chemical vapor deposition process
Figure GDA0004069675650000022
Figure GDA0004069675650000023
The silicon nitride dielectric layer.
As a further optimization of the present invention, in step 7,
Figure GDA0004069675650000021
as a further preferred embodiment of the present invention, the thickness of the gold plating in step 9 is 2 μm.
Compared with the prior art, the directional reconfigurable micro-electromechanical antenna based on the MEMS technology has the following remarkable advantages that:
1. the MEMS cantilever beams are arranged in the star-shaped radiation structure of the micro-electromechanical antenna from four directions, and pull-down electrodes are respectively arranged on two sides below the four cantilever beams, so that the directivity of the microwave antenna can be effectively reconstructed;
2. voltages with the same polarity and different magnitudes are applied to the pull-down electrodes on the same side of the cantilever beam, so that the MEMS cantilever beam can be bent to different degrees, and small reconstruction of the microwave antenna directivity is realized;
3. by applying voltages with opposite polarities to the pull-down electrodes on the left side and the right side of the cantilever beam, the MEMS cantilever beam can bend in opposite directions, so that the large reconstruction of the microwave antenna directivity is realized;
4. the structure of the invention is based on MEMS technology, and has the basic advantages of MEMS, such as small volume, light weight, low power consumption, and the like;
5. the antenna of the invention is completely compatible with a Monolithic Microwave Integrated Circuit (MMIC) process, is convenient to integrate, and has a series of advantages that the traditional microstrip antenna cannot be compared with the traditional microstrip antenna, so that the antenna has good research and application values.
Drawings
Fig. 1 is a top view of a directionally reconfigurable microelectromechanical antenna.
Figure 2 is a cross-sectional view of the cantilever beam before release.
Figure 3 is a cross-sectional view of the cantilever beam after release.
In the figure: the antenna comprises a 1-microstrip antenna feeder line, a 2-star-structure antenna radiating element, a 3-MEMS cantilever beam, a 4-cantilever beam pull-down electrode, a 5-cantilever beam bridge pier, a 6-polyimide sacrificial layer, a 7-SiN dielectric layer and an 8-GaAs substrate.
Detailed Description
The technical scheme of the invention is further explained in detail by combining the attached drawings:
the invention discloses a directional reconfigurable micro-electromechanical antenna, which is a directional reconfigurable microwave antenna, takes GaAs as a substrate, and as shown in figures 1 to 3, the micro-electromechanical antenna takes GaAs as a substrate 8, and a micro-strip antenna feeder line 1, a star-structured micro-strip antenna radiating element 2, an MEMS cantilever beam 3, a cantilever beam bridge pier 5, a cantilever beam pull-down electrode 4, an SiN dielectric layer 7 and a polyimide sacrificial layer 6 are arranged on the substrate.
Any four radiation ends of the star-structure microstrip antenna radiation element 2 are respectively connected with a cantilever beam bridge pier 5, each cantilever beam bridge pier 5 is connected with an MEMS (micro electro mechanical system) cantilever beam 3, two sides of each cantilever beam bridge pier 5 are respectively provided with a cantilever beam pull-down electrode 4 below each MEMS cantilever beam 3, each cantilever beam pull-down electrode 4 is provided with an SiN medium layer 7, and a polyimide sacrificial layer 6 is arranged between the SiN medium layer 7 on each cantilever beam pull-down electrode 4 and the corresponding MEMS cantilever beam 3; the radiation end of the star-shaped structure microstrip antenna radiation element 2 which is not connected with the cantilever bridge pier 5 is connected with the microstrip antenna feeder line 1.
According to the invention, a microstrip antenna feeder line 1 receives a microwave signal to be transmitted to a star-structure microstrip antenna radiation element 2, the star-structure microstrip antenna radiation element 2 is connected to four identical cantilever beam piers 5, the four identical cantilever beam piers 5 are connected with four identical MEMS cantilever beams 3, cantilever beam pull-down electrodes 4 are respectively arranged on two sides below each MEMS cantilever beam 3, an SiN medium layer 7 is arranged on each pull-down electrode 4, and a polyimide sacrificial layer 6 is arranged between each SiN medium layer 7 and each MEMS cantilever beam 3.
The microstrip antenna feeder receives a microwave signal to be transmitted, and the microwave signal is transmitted out through the star-structure microwave antenna radiating element and the four same cantilever beams. Due to the fact that the pull-down electrodes are arranged on the two sides below the MEMS cantilever beam structure, the reconfiguration of adjusting the directivity of the microwave antenna is achieved. Voltages with the same polarity and different magnitudes are applied to the pull-down electrodes on the same side of the cantilever beam, so that the MEMS cantilever beam can be bent to different degrees, and small reconstruction of the directivity of the microwave antenna is realized; voltages with opposite polarities are applied to the pull-down electrodes on the left side and the right side of the cantilever beam, so that the MEMS cantilever beam can be bent in opposite directions, and the large reconstruction of the microwave antenna directivity is realized. Finally, the reconfiguration of adjusting the directivity of the microwave antenna is realized.
The invention relates to a preparation method of a directional reconfigurable micro-electromechanical antenna, which comprises the following steps:
1) Preparing a gallium arsenide substrate: selecting an undoped semi-insulating gallium arsenide substrate;
2) Photoetching: removing photoresist at the positions of the cantilever beam pull-down electrode, the microstrip antenna feeder line and the star-structure microstrip antenna radiating element;
3) Sputtering gold: forming a cantilever pull-down electrode, a microstrip antenna feeder line and a star-structure microstrip antenna radiating element, wherein the thickness of gold is 0.3 mu m;
4) Depositing a silicon nitride dielectric layer above the cantilever beam pull-down electrode: use etcGrowing by plasma enhanced chemical vapor deposition process
Figure GDA0004069675650000042
The silicon nitride dielectric layer;
5) Photoetching and etching the silicon nitride dielectric layer; reserving a silicon nitride medium layer between the cantilever beam and the pull-down electrode thereof;
6) Depositing and photoetching a polyimide sacrificial layer: coating a polyimide sacrificial layer with the thickness of 1.6 mu m on a gallium arsenide substrate, requiring to fill a pit, wherein the thickness of the polyimide sacrificial layer determines the height between a cantilever beam and a silicon nitride dielectric layer, photoetching the polyimide sacrificial layer, and only keeping the sacrificial layer below the cantilever beam;
7) Sputtering titanium/gold/titanium:
Figure GDA0004069675650000041
8) Photoetching: removing photoresist at the cantilever beam and the bridge pier thereof;
9) Gold electroplating: electroplating a cantilever beam and a bridge pier thereof, wherein the thickness of gold is 2 mu m;
10 Release sacrificial layer): and releasing the polyimide sacrificial layer below the cantilever beam structure by using a developing solution, and dehydrating by using absolute ethyl alcohol to form the suspended cantilever beam structure.
The criteria for distinguishing whether this structure is present are as follows:
the microstrip antenna structure adopts a star-shaped microstrip antenna radiating element and four same MEMS cantilever beam structures. The working principle is as follows: voltages with the same polarity and different magnitudes are applied to the pull-down electrodes on the same side of the cantilever beam, so that the MEMS cantilever beam can be bent to different degrees, and small reconstruction of the microwave antenna directivity is realized; voltages with opposite polarities are applied to the pull-down electrodes on the left side and the right side of the cantilever beam, so that the two sides of the MEMS cantilever beam can be bent in opposite directions, and the large reconstruction of the microwave antenna directivity is realized. Due to the fact that the pull-down electrodes are arranged on the two sides below the MEMS cantilever beam structure, the reconfiguration of the directivity of the microwave antenna is achieved. The structure satisfying the above conditions is regarded as the directional reconfigurable micro-electromechanical antenna of the present invention.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can understand that the modifications or substitutions within the technical scope of the present invention are included in the scope of the present invention, and therefore, the scope of the present invention should be subject to the protection scope of the claims.

Claims (7)

1. The directional reconfigurable micro-electromechanical antenna is characterized in that the micro-electromechanical antenna takes gallium arsenide as a substrate, and a micro-strip antenna feeder line, a star-structure micro-strip antenna radiating element, an MEMS cantilever beam, a cantilever beam pier, a cantilever beam pull-down electrode, a dielectric layer and a sacrificial layer are arranged on the substrate; any four radiation ends of the star-structure microstrip antenna radiation element are respectively connected with a cantilever beam bridge pier, each cantilever beam bridge pier is connected with an MEMS (micro electro mechanical System) cantilever beam, cantilever beam pull-down electrodes are respectively arranged on two sides of each cantilever beam bridge pier below each MEMS cantilever beam, a dielectric layer is arranged on each cantilever beam pull-down electrode, and a sacrificial layer is arranged between the dielectric layer on each cantilever beam pull-down electrode and the corresponding MEMS cantilever beam; the radiation end of the star-structure microstrip antenna radiation element which is not connected with the cantilever bridge pier is connected with a microstrip antenna feeder line; each cantilever beam pull-down electrode and each cantilever beam pier are connected with the substrate; the dielectric layer is SiN, and the sacrificial layer is a polyimide sacrificial layer.
2. The directional reconfigurable microelectromechanical antenna of claim 1, wherein the four cantilever piers are identical and the four MEMS cantilevers are identical.
3. A method of making a directionally reconfigurable microelectromechanical antenna as claimed in any one of claims 1 to 2, characterized by the specific steps of:
1) Selecting undoped semi-insulating gallium arsenide as a substrate;
2) Removing the photoresist at the radiation elements of the cantilever beam pull-down electrode, the microstrip antenna feeder line and the star-shaped microstrip antenna;
3) Sputtering gold to form a cantilever beam pull-down electrode, a microstrip antenna feeder line and a star-structure microstrip antenna radiating element;
4) Depositing a silicon nitride dielectric layer above the cantilever beam pull-down electrode;
5) Photoetching and etching the silicon nitride dielectric layer, and reserving the silicon nitride dielectric layer between the cantilever beam and the cantilever beam pull-down electrode below the cantilever beam;
6) Coating a polyimide sacrificial layer with the thickness of 1.6 mu m on the gallium arsenide substrate, photoetching the polyimide sacrificial layer, and reserving the sacrificial layer below the cantilever beam;
7) Sputtering titanium/gold/titanium to form a cantilever beam and a corresponding cantilever beam pier;
8) Removing the photoresist at the cantilever beam and the corresponding cantilever beam bridge pier;
9) Electroplating gold to form the cantilever beam and the corresponding cantilever beam pier;
10 Release sacrificial layer): and releasing the polyimide sacrificial layer below the cantilever beam structure by using a developing solution, and dehydrating by using absolute ethyl alcohol to form the suspended cantilever beam structure.
4. A method of making a directional reconfigurable microelectromechanical antenna of claim 3, characterized in that in step 3, the gold is 0.3 μm thick.
5. The method of claim 3, wherein step 4 comprises growing the directional reconfigurable micro-electromechanical antenna using a plasma enhanced chemical vapor deposition process
Figure FDA0004069675640000011
The silicon nitride dielectric layer.
6. The method of claim 3, wherein in step 7,
Figure FDA0004069675640000021
7. a method of fabricating a directional reconfigurable microelectromechanical antenna according to claim 3, characterized in that in step 9, the electroplated gold is 2 μm thick.
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CN107138380B (en) * 2017-06-20 2022-09-02 南京邮电大学 Multidirectional piezoelectric ultrasonic generator and preparation method thereof
CN110083975B (en) * 2019-05-14 2020-12-15 北京航空航天大学 Analytic modeling method for cylindrical low-frequency mechanical antenna
CN110083976B (en) * 2019-05-14 2020-12-15 北京航空航天大学 Analytic modeling method for drum-shaped low-frequency mechanical antenna

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CN102176535A (en) * 2011-01-17 2011-09-07 东南大学 Micro electro mechanical microwave antenna and manufacturing method thereof
US9263803B1 (en) * 2012-11-09 2016-02-16 University Of South Florida Mechanically reconfigurable antennas
CN206163710U (en) * 2016-11-24 2017-05-10 南京邮电大学 Directionality reconfigurable microelectronics machinery antenna

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US7276990B2 (en) * 2002-05-15 2007-10-02 Hrl Laboratories, Llc Single-pole multi-throw switch having low parasitic reactance, and an antenna incorporating the same

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Publication number Priority date Publication date Assignee Title
CN102176535A (en) * 2011-01-17 2011-09-07 东南大学 Micro electro mechanical microwave antenna and manufacturing method thereof
US9263803B1 (en) * 2012-11-09 2016-02-16 University Of South Florida Mechanically reconfigurable antennas
CN206163710U (en) * 2016-11-24 2017-05-10 南京邮电大学 Directionality reconfigurable microelectronics machinery antenna

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